KR20080109270A - Method for producing probe card - Google Patents

Method for producing probe card Download PDF

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Publication number
KR20080109270A
KR20080109270A KR1020070057384A KR20070057384A KR20080109270A KR 20080109270 A KR20080109270 A KR 20080109270A KR 1020070057384 A KR1020070057384 A KR 1020070057384A KR 20070057384 A KR20070057384 A KR 20070057384A KR 20080109270 A KR20080109270 A KR 20080109270A
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South Korea
Prior art keywords
substrate
forming
portions
sacrificial substrate
correspond
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KR1020070057384A
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Korean (ko)
Inventor
김영진
유재봉
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세크론 주식회사
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Priority to KR1020070057384A priority Critical patent/KR20080109270A/en
Publication of KR20080109270A publication Critical patent/KR20080109270A/en

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R1/00—Details of instruments or arrangements of the types included in groups G01R5/00 - G01R13/00 and G01R31/00
    • G01R1/02—General constructional details
    • G01R1/06—Measuring leads; Measuring probes
    • G01R1/067—Measuring probes
    • G01R1/073—Multiple probes
    • G01R1/07307—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card
    • G01R1/07342—Multiple probes with individual probe elements, e.g. needles, cantilever beams or bump contacts, fixed in relation to each other, e.g. bed of nails fixture or probe card the body of the probe being at an angle other than perpendicular to test object, e.g. probe card
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
    • G01R31/26—Testing of individual semiconductor devices
    • G01R31/2601—Apparatus or methods therefor
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
    • G01R3/00—Apparatus or processes specially adapted for the manufacture or maintenance of measuring instruments, e.g. of probe tips

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Measuring Leads Or Probes (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

A method for producing probe card is provided to reduce whole process time since there is no need to repeat forming of a photoresist layer, an etching removal process, metallic plating and polishing to form a base plate of the probe. A method for producing probe card is comprised of steps: Preparing a substrate in which a plurality of wirings and a plurality of device; The step preparing a sacrificial substrate and forms a plurality of penetration holes in order to correspond to the location of a plurality of upper side terminals; positioning a sacrificial substrate on the top of the substrate to correspond a plurality of penetration holes to a plurality of terminals on the top of the substrate; plating a plurality of terminals on the top of the substrate with respective conductive metal and forming a base plate.

Description

Method for producing probe card

1 schematically shows a probe card manufactured according to a conventional probe card manufacturing method.

2A to 2C schematically illustrate a substrate preparation step in a method of manufacturing a probe card according to an embodiment of the present invention.

3A to 3C schematically illustrate a step of preparing a sacrificial substrate in a method of manufacturing a probe card according to an embodiment of the present invention.

4a to 4c schematically show the step of forming the proximal end of the probe in the method of manufacturing a probe card according to an embodiment of the present invention.

Figure 5 schematically shows the steps of forming the body portion and the tip portion of the probe of the probe card manufacturing method according to an embodiment of the present invention.

Figure 6a schematically shows the steps of forming the body portion and the tip portion of the probe of the probe card manufacturing method according to another embodiment of the present invention.

FIG. 6B schematically illustrates bonding the body and tip of the probe formed in FIG. 6A to the proximal end of the probe of FIG. 4C.

The present invention relates to a method of manufacturing a probe card, and more particularly, to a method of manufacturing a probe card capable of forming a proximal end portion of a probe of a probe card using a silicon wafer as a sacrificial substrate.

A wafer probing apparatus is an apparatus for electrically testing each individual semiconductor chip formed on a wafer by using a probe card, and the probe contacts a metal pad of each individual semiconductor chip so that a test can be performed.

The probe of the probe card for performing the electrical test of each individual semiconductor chip on the wafer is generally used in the form of a needle (also referred to as a 'probe needle'), and each of these probes is mounted on a probe card. However, it is not preferable to mount a needle-shaped probe on a probe card in terms of its manufacturing time and cost.

Therefore, a method of simultaneously manufacturing a plurality of probe card probes by using a semiconductor etching technology has been studied.

Hereinafter, a method of manufacturing a conventional probe card using a semiconductor etching technique will be described in detail with reference to FIG. 1.

First, as shown in FIG. 1, after the photoresist layer is formed of a photoresist material on the substrate 10, the photoresist layer around the wiring part 11 is etched away, and then the wiring part 11 is etched away. ) To form a bump 20 of the probe by plating a metal.

Thereafter, a photoresist layer is further formed, the portions corresponding to the beams of the probes are etched away, and then the metals are plated on the etched portions to form the bodies 30 of the probes. To form a tip portion 40 of the probe.

However, in the conventional method, since the thickness of the photoresist layer formed on the substrate 10 is formed by applying a photoresist material, it is difficult to form a predetermined thickness (80 μm) or more. Therefore, when the height of the base end of the target probe was 300 micrometers or more, the photoresist layer had to be repeated 3 times or more. That is, the photoresist layer formation, the etching removal process, the metal plating process, and the polishing removal process of the protruding metal plating had to be repeated several times or more. Therefore, the process takes a long time, the base end portion 20 is formed in a multi-layer as shown in FIG.

However, in the base end portion 20 formed in this manner, the bonding force between the layers is not good, the process stress is applied in the repeated polishing removal process, so that the yield is low during the manufacturing process, and the contact with the contact portion of the semiconductor element repeated during the probing of the wafer. There is a problem that is easily broken by.

In order to solve the above problems of the prior art, the present invention provides a novel probe card manufacturing method capable of forming a proximal end of a probe having a sufficient height without repeating the formation of the photoresist layer, the etching removal process, and the polishing removal process. To provide.

In addition, the present invention is to provide a novel probe card manufacturing method that can form the base end of the desired height in one metal plating process.

According to an aspect of the present invention, there is provided a method of manufacturing a probe card, the method comprising: preparing a substrate having a plurality of wiring units and a plurality of upper surface terminals electrically connected to one ends of the plurality of wiring units and attached to an upper portion thereof; ; Preparing a silicon wafer sacrificial substrate, and forming a plurality of through holes on the silicon wafer sacrificial substrate to respectively correspond to positions corresponding to the plurality of top terminals; Positioning the silicon wafer sacrificial substrate on the substrate such that the plurality of through holes correspond to the plurality of top terminals; Forming a plurality of proximal ends by introducing conductive metals into the upper portions of the plurality of upper surface terminals, respectively, through the plurality of through holes; Forming a plurality of body parts of a predetermined length to correspond to upper portions of the plurality of base ends, respectively, with a conductive metal; And forming a tip portion having a predetermined height of a conductive metal so as to correspond to a predetermined region of the plurality of body portions, respectively.

The base end may have a height of 300 μm or more.

In the method of manufacturing a probe card, after forming a photoresist layer on the substrate in the preparing of the substrate, only a portion corresponding to the plurality of top terminals is etched to form a plurality of mold portions corresponding to the plurality of base ends. It may further comprise the step.

Here, in the positioning of the silicon wafer sacrificial substrate on the substrate, the plurality of mold portions and the plurality of through holes may be in communication with each other. The conductive metal may be nickel, nickel cobalt alloy or nickel iron alloy.

 In the method of manufacturing the probe card, the forming of the plurality of body parts may include forming a photoresist layer on an upper portion of the substrate provided with the plurality of base ends, and then removing only portions corresponding to the plurality of body parts by etching. Forming a plurality of mold portions corresponding to the trunk portion of the body; And introducing a conductive metal into each of the plurality of mold parts to form a plurality of body parts.

In the method of manufacturing the probe card, the forming of the plurality of tips may include forming a photoresist layer on the substrate having the plurality of body parts, and then etching away only portions corresponding to the plurality of tips. Forming a plurality of mold portions corresponding to the tip portion; And introducing a conductive metal into each of the plurality of mold parts to form a plurality of tip parts.

The forming of the plurality of body parts in the method of manufacturing the probe card may include forming a plurality of through holes on the separately prepared second sacrificial substrate to correspond to positions corresponding to the plurality of body parts, respectively; Positioning the second sacrificial substrate on the substrate such that the plurality of through holes respectively correspond to an upper portion of the plurality of base ends; And introducing a conductive metal into the plurality of through holes, respectively, to form a plurality of body parts.

The forming of the plurality of tip parts in the method of manufacturing the probe card may include forming a plurality of through holes on the third sacrificial substrate separately prepared to correspond to positions corresponding to the plurality of tip parts; Positioning the third sacrificial substrate on the substrate such that the plurality of through holes respectively correspond to an upper portion of a predetermined region of the body portion; And introducing a conductive metal into the plurality of through holes, respectively, to form a plurality of tip parts.

According to another aspect of the present invention, there is provided a method of manufacturing a probe card, the method comprising: preparing a substrate having a plurality of wiring units and a plurality of upper surface terminals electrically connected to one ends of the plurality of wiring units and attached to an upper portion thereof; step; Preparing a silicon wafer sacrificial substrate, and forming a plurality of through holes on the silicon wafer sacrificial substrate to respectively correspond to positions corresponding to the plurality of top terminals; Placing the silicon wafer sacrificial substrate on the substrate such that the plurality of through holes formed in the plurality of upper surface terminals correspond to each other; Forming a plurality of proximal ends by introducing conductive metals into the upper portions of the plurality of upper surface terminals, respectively, through the plurality of through holes; Preparing a sacrificial substrate and forming a plurality of tips on the sacrificial substrate with a conductive metal; Forming a plurality of body parts of a predetermined length to correspond to upper portions of the plurality of tip parts, respectively, with a conductive metal; And positioning the second sacrificial substrate on the substrate so that the plurality of body parts respectively correspond to the plurality of base ends, and bonding the plurality of body parts to the corresponding plurality of base ends, respectively.

According to another aspect of the present invention, there is provided a method of manufacturing a probe card, the method comprising: preparing a substrate having a plurality of wiring units and a plurality of upper surface terminals electrically connected to one ends of the plurality of wiring units and attached to an upper portion thereof; step; Preparing a silicon wafer sacrificial substrate, and forming a plurality of through holes on the silicon wafer sacrificial substrate to respectively correspond to positions corresponding to the plurality of top terminals; Placing the silicon wafer sacrificial substrate on the substrate such that the plurality of through holes formed in the plurality of upper surface terminals correspond to each other; Forming a plurality of proximal ends by introducing conductive metals into the upper portions of the plurality of upper surface terminals, respectively, through the plurality of through holes; Forming a plurality of body parts of a predetermined length to correspond to upper portions of the plurality of base ends, respectively, with a conductive metal;

Preparing a sacrificial substrate and forming a plurality of tips on the sacrificial substrate with a conductive metal; And positioning the sacrificial substrate on the substrate so that the plurality of tip portions respectively correspond to predetermined regions of the plurality of body portions, and bonding the plurality of tip portions to the plurality of body portions.

In order to achieve the above technical problem, in the present invention, a mold corresponding to the proximal end of the probe is separately formed by using a silicon wafer having a thickness corresponding to the height of the proximal end of the desired probe, and the metal is used once. By performing the plating process to form the proximal end of the probe, the proximal end of the probe can be formed without repeating the formation of the photoresist layer, the etching removal process, and the polishing removal process.

Hereinafter, exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. As those skilled in the art would realize, the described embodiments may be modified in various different ways, all without departing from the spirit or scope of the present invention.

First, as shown in FIG. 2A, a silicon substrate or a laminated ceramic substrate is prepared as the substrate 100. The substrate 100 is connected to the wiring part and one end of the wiring part therein, and is connected to the upper surface terminal 130 attached to the upper surface of the substrate 100 and the other end of the wiring part and the lower surface terminal attached to the lower surface of the substrate 100. There is no particular limitation as long as it is formed, but is preferably made of a ceramic material and a commercially available space transformer may be used. In the drawings of the present invention, for convenience of description, the wiring part and the bottom terminal are not illustrated, and only one top terminal 130 is illustrated on the substrate 100. However, the number of the top terminal 130 is not limited, and generally, It is formed in plural.

The metal films 110 and 120 are formed in two layers below the prepared substrate 100. The metal films 110 and 120 may be formed by applying a chemical vapor deposition (CVD) method or a sputtering method, but the formation method is not particularly limited. The metal films 110 and 120 are used as electrodes in a plating process for forming a proximal end. In the embodiment of the present invention, the metal film is formed of two layers, but is not limited thereto.

Thereafter, as shown in FIG. 2B, a photoresist material was applied on the substrate 100 and baked at a predetermined temperature to form the first photoresist layer 200.

Here, the photoresist material may be a positive photoresist material that is a material that breaks the bond chain of the polymer in the exposed site when exposed, or a negative photoresist material that the bond chain of the polymer in the exposed site is firm when exposed. . The first photoresist layer 200 thus formed generally has a thickness of 80 μm or less.

As such, when the first photoresist layer 200 is formed, only a portion corresponding to the upper terminal 130 of the substrate is selectively exposed through a mask (not shown) to expose the first photoresist layer 200. The photoresist material of the damaged part is deteriorated, and only the deteriorated part is removed using an etching solution capable of selectively etching away the deteriorated part. As a result, only a portion of the first photoresist layer 200 corresponding to the upper surface terminal 130 is etched away to form a mold portion 210 with respect to the proximal end of the probe for the probe card, as shown in FIG. 2C. The etching method is not particularly limited, and dry etching may be used in addition to the wet etching method described above.

In FIG. 2C, the thickness of the photoresist layer 200 is shown to be thicker than the height of the upper terminal 130, but the thickness of the photoresist layer 200 is not particularly limited as long as the thickness of the photoresist layer 200 is greater than or equal to the height of the upper terminal 130.

Thereafter, the bonding material may be further applied on the photoresist layer 200 except for the mold part 210. This bonding material assists in bonding to the silicon wafer sacrificial substrate in a later process.

Next, after preparing the silicon wafer as a sacrificial substrate, as shown in Figure 3a, the silicon wafer is polished to a thickness corresponding to the height of the proximal end of the probe to be manufactured. This polishing method is not particularly limited and preferably uses chemical mechanical polishing (CMP). In the present invention, the height of the proximal end is not particularly limited, and may be preferably 300 μm or more. As described above, in the present invention, the thickness of the silicon wafer whose thickness exceeds the height of the proximal end of the probe for the probe card is prepared to correspond to the height of the proximal end of the probe. There is no need to repeat the resist formation, etching removal process, polishing removal process, and the like.

Thereafter, as shown in FIG. 3B, the portion corresponding to the proximal end of the probe is performed on the silicon wafer having the thickness adjusted until the silicon wafer is penetrated by the conventional active ion etching method. A base end through hole 310 is formed. The shape of the through hole 310 is not particularly limited.

In addition, the oxide layers 410 and 420 are formed by oxidizing both surfaces of the silicon wafer on which the through holes 310 are formed. This oxide film is used as an insulating film in a metal plating process later.

Thereafter, the silicon wafer sacrificial substrate 300 having the through hole 310 corresponding to the proximal end of the probe is aligned with the substrate 100 prepared by FIG. 2. At this time, as shown in Figure 4a, the through hole 310 of the sacrificial substrate 300 is positioned on the mold portion 210 of the substrate 100 to communicate with each other, so that the sacrificial substrate 300 and the substrate 100 Align the position.

Thereafter, the sacrificial substrate 300 and the substrate 100 are pressed to each other and bonded. In this case, a bonding material may be applied between the sacrificial substrate 300 and the substrate 100 to assist the bonding.

Then, as can be seen in Figure 4b, using the metal film (110, 120) as an electrode, the inner end of the mold portion 210 and the through hole 310 by introducing a conductive metal in accordance with the electroplating method Form 500.

After forming the proximal end 500, as shown in FIG. 4C, the conductive metal portion protruding out of the through hole 310 is ground by chemical mechanical polishing (CMP) or the like. At this time, the thickness of the base end 500 can be adjusted again to a predetermined thickness. The shape of the base end 500 is not particularly limited. The base end 500 formed as described above is electrically connected to the upper terminal 130 of the substrate 100 and the wiring unit connected to the upper terminal.

In this case, as the conductive metal used for forming the proximal end, a metal having excellent elasticity and conductivity is used. Preferably, nickel or nickel alloy, specifically nickel cobalt alloy or nickel iron alloy is used.

Thereafter, as shown in FIG. 5A, the silicon wafer sacrificial substrate 300 is selectively etched away with an etching solution such as KOH except a proximal end 500 by a predetermined thickness. At this time, the thickness removed by etching can be appropriately adjusted according to the object of the invention.

In addition, after the metal film 600 is formed on the sacrificial substrate 300 and the proximal end 500 of the substrate 100 in which a predetermined thickness of the silicon wafer sacrificial substrate 300 is selectively etched away, the proximal end 500 The upper metal film 600 is polished and removed to expose the proximal end 500 as shown in FIG. 5B. Here, the metal film 600 may be formed by applying a chemical vapor deposition method or a sputtering method, but the formation method is not particularly limited.

Thereafter, a photoresist material was applied on the metal film 600 and baked at a constant temperature to form a second photoresist layer 700.

As such, when the second photoresist layer 700 is formed, only a portion corresponding to the body portion of the probe including the proximal end 500 region is selectively etched away through a mask (not shown), as illustrated in FIG. 5C. As such, a mold for the body of the probe is formed. The etching method is not particularly limited, and dry etching may be used in addition to the wet etching method described above.

Thereafter, a conductive metal is introduced into the body mold of the probe according to the electroplating method to form the body 800 of the probe.

After the trunk portion 800 is formed, the conductive metal portion protruding out of the second photoresist layer 700 is ground by chemical mechanical polishing (CMP) or the like, as shown in FIG. 5D. At this time, the thickness of the body portion 800 may be adjusted again to a predetermined thickness. The shape of the body 800 is not particularly limited. The body part 800 formed as described above is electrically connected to the base end 500, the upper terminal 130 of the substrate 100, and the wiring part connected to the upper terminal 130.

At this time, as the conductive metal used for forming the body portion, a metal having excellent elasticity and conductivity is used, and preferably nickel or nickel alloy, specifically nickel cobalt alloy or nickel iron alloy is used.

Thereafter, a photoresist material was applied on the body portion 800 and the second photoresist layer 700 and baked at a predetermined temperature to form a third photoresist layer 900.

As such, when the third photoresist layer 900 is formed, only a portion corresponding to the tip portion of the probe positioned in a predetermined region of the body of the probe through the mask (not shown) is selectively etched away so that the tip portion of the probe may be removed. Form a mold. The etching method is not particularly limited, and dry etching may be used in addition to the wet etching method described above.

Thereafter, a conductive metal is introduced into the body mold of the probe according to the electroplating method to form the tip part 1000 of the probe.

After the tip portion 1000 is formed, the conductive metal portion protruding outside the third photoresist layer 900 is ground by chemical mechanical polishing (CMP) or the like, as shown in FIG. 5E. The shape of the tip portion 1000 is not particularly limited. The tip part 1000 formed as described above is electrically connected to the body part 800, the base end 500, the upper terminal 130 of the substrate 100, and the wiring part connected to the upper terminal 130.

At this time, as the conductive metal used for forming the tip portion, a metal having excellent elasticity and conductivity is used, and preferably nickel or nickel alloy, specifically nickel cobalt alloy or nickel iron alloy is used.

In order to achieve the desired tip height and shape, the photoresist material may be repeatedly applied to further form the fourth photoresist layer 910, and the above process may be repeated.

As such, when the proximal end 500, the trunk 800, and the tip 1000 of the probe are all formed, all of the photoresist layer and the silicon wafer sacrificial substrate 300 are selectively etched away, as shown in FIG. 5F. Make the same probe card. In this case, an etching solution such as KOH may be used for selective viewing of the silicon wafer sacrificial substrate 300, and an alkaline solvent such as acetone may be used as an etching solution to etch away the photoresist layer.

In the above, the method of manufacturing a probe card according to an embodiment of the present invention, which forms the body part and the tip part of the probe by using a semiconductor process on the proximal end of the formed probe, is disclosed. The manufacturing method is not limited to this.

Specifically, in order to form the body portion or the tip portion of the probe, a separate sacrificial substrate having a through hole corresponding to the body portion or the tip portion of the probe is prepared, and used as a mold for the body portion or the tip portion of the probe, a conductive metal It may be introduced into the mold to form the body portion or the tip portion of the probe. The method of using the sacrificial substrate is similar to the method of using the sacrificial substrate with respect to the proximal end of the probe of the silicon wafer or the silicon substrate, and thus, a detailed description thereof will be omitted.

On the other hand, according to the method for manufacturing a probe according to another embodiment of the present invention, after forming the body portion and the tip portion of the probe using a separate sacrificial substrate, the substrate 100 having the proximal end 500 prepared in Figure 4c The probe substrate may be manufactured by aligning the sacrificial substrate on the substrate, attaching the proximal end portion 500 and the body portion, and then etching away the sacrificial substrate.

In detail, as shown in FIG. 6A, the sacrificial substrate 1100 is prepared, and a tip portion of the probe is formed by using a semiconductor etching process on the upper surface of the prepared sacrificial substrate 1100 through a fifth photoresist layer 1200. 1400 and a body portion 1300 extending from the tip portion 1400 by a predetermined length in one direction. Here, as the sacrificial substrate 1100, a silicon substrate, a laminated ceramic substrate, or a silicon wafer is preferably used.

Herein, the formation of the tip portion 1400 and the body portion 1300 of the probe may be performed using a conventional semiconductor etching process such as conventional lithography or a MEMS process. The detailed description thereof will be omitted.

Thereafter, a bonding material is coated on the proximal end 500 of the probe to form a bonding layer 510. 6A, the sacrificial substrate 1100 having the tip portion 1400 and the body portion 1300 of the probe formed therein is aligned with the substrate 100 on which the proximal end 500 of the probe is formed by FIGS. 4A through 4C. Let's do it.

At this time, the position of the sacrificial substrate 1100 and the substrate 100 is aligned such that a predetermined region of the body portion 1300 of the probe is positioned at the bonding layer 510 of the proximal end 500 of the probe.

6B, the sacrificial substrate 1100 and the substrate 100 are attached to each other so that a predetermined region of the body portion 1300 of the probe contacts the bonding layer 510 of the pillar portion 500 of the probe. Then, heat and pressure are applied to the bonding layer 510 to thermally bond the upper end of the proximal end 500 of the probe and the predetermined area of the body portion 1300 of the probe to be bonded to each other. Such a thermal bonding method may be a flip chip bond (FCB) or an anion bonding method.

As such, when the proximal end portion 500 of the probe and the body portion 1300 of the probe are attached to each other, all the photoresist layers and the silicon wafer sacrificial substrate 300 may be selectively etched away to form a probe card.

In addition, according to the method for manufacturing a probe according to another embodiment of the present invention, after forming only the tip portion of the probe using a separate sacrificial substrate, by aligning the sacrificial substrate on the substrate 100 prepared in Figure 5d, After attaching the tip to a predetermined region of the body portion 800, the sacrificial substrate may be etched away to manufacture a probe card. Method for manufacturing a probe according to another embodiment of the present invention can be achieved by a method similar to the method used in the above-described other embodiments of the present invention, a detailed description thereof will be omitted here.

Using the method of manufacturing a probe card of the present invention, there is no need to repeat the formation of the photoresist layer, the etching removal process, the conductive metal plating process, and the polishing process to form the proximal end of the probe, thereby reducing the overall process time. It is shortened and the base end part of desired height can be formed by one metal plating process.

On the other hand, by using the method of manufacturing the probe card, it is possible to minimize the formation of the photoresist layer, the etching removal process, the conductive metal plating process, and the polishing process, thereby minimizing the process stress, and thus the process of the probe during the manufacturing process The collapse of the proximal end can be minimized.

Although the preferred embodiments of the present invention have been described above, the present invention is not limited thereto, and various modifications can be made within the scope of the technical idea of the present invention, and it is obvious that the present invention belongs to the appended claims. Do.

Claims (11)

Preparing a substrate having a plurality of wiring units therein and a plurality of upper surface terminals electrically connected to one ends of the plurality of wiring units and attached to an upper portion thereof; Preparing a silicon wafer sacrificial substrate, and forming a plurality of through holes on the silicon wafer sacrificial substrate to respectively correspond to positions corresponding to the plurality of top terminals; Positioning the silicon wafer sacrificial substrate on the substrate such that the plurality of through holes correspond to the plurality of top terminals; Forming a plurality of proximal ends by introducing conductive metals into the upper portions of the plurality of upper surface terminals, respectively, through the plurality of through holes; Forming a plurality of body parts of a predetermined length to correspond to upper portions of the plurality of base ends, respectively, with a conductive metal; And Forming a tip portion of a predetermined height of a conductive metal so as to correspond to a predetermined region of the plurality of trunk portions, respectively; Probe card manufacturing method comprising a. The method of claim 1, The probe card manufacturing method, characterized in that the height of the base end is 300㎛ or more. The method of claim 1, In the preparing of the substrate, after forming the photoresist layer on the substrate, the step of forming a plurality of mold portions corresponding to the plurality of proximal ends by etching away only the portions corresponding to the plurality of upper surface terminals; The probe card manufacturing method, characterized in that. The method of claim 3, In the positioning of the silicon wafer sacrificial substrate on the substrate, the plurality of mold parts and the plurality of through holes communicate with each other. The method of claim 1 And the conductive metal is nickel, nickel cobalt alloy or nickel iron alloy. The method of claim 1, Forming the plurality of body portion Forming a plurality of mold parts corresponding to the plurality of body parts by etching away only portions corresponding to the plurality of body parts after forming a photoresist layer on the substrate having the plurality of base ends; And Introducing a conductive metal into each of the plurality of mold parts to form a plurality of body parts; The probe card manufacturing method comprising a. The method of claim 1, Forming the plurality of tip parts Forming a plurality of mold portions corresponding to the plurality of tip portions by etching away only portions corresponding to the plurality of tip portions after forming a photoresist layer on the substrate having the plurality of body portions; And Introducing a conductive metal into each of the plurality of mold portions to form a plurality of tip portions; The probe card manufacturing method comprising a. The method of claim 1, Forming the plurality of body portion Forming a plurality of through holes on the separately prepared first sacrificial substrate so as to correspond to positions corresponding to the plurality of body parts, respectively; Positioning the first sacrificial substrate on the substrate such that the plurality of through holes respectively correspond to an upper portion of the plurality of base ends; And Introducing a conductive metal into each of the plurality of through holes to form a plurality of body parts; The probe card manufacturing method comprising a. The method of claim 1, Forming the plurality of tip parts Forming a plurality of through holes on the separately prepared second sacrificial substrate so as to correspond to positions corresponding to the plurality of tip portions, respectively; Positioning the second sacrificial substrate on the substrate such that the plurality of through holes respectively correspond to an upper portion of a predetermined area of the body portion; And Introducing a conductive metal into each of the plurality of through holes to form a plurality of tip portions; The probe card manufacturing method comprising a. Preparing a substrate having a plurality of wiring units therein and a plurality of upper surface terminals electrically connected to one ends of the plurality of wiring units and attached to an upper portion thereof; Preparing a silicon wafer sacrificial substrate and forming a plurality of through holes on the silicon wafer sacrificial substrate so as to correspond to positions corresponding to the plurality of top terminals, respectively; Placing the silicon wafer sacrificial substrate on the substrate such that the plurality of through holes formed in the plurality of upper surface terminals correspond to each other; Forming a plurality of proximal ends by introducing conductive metals into the upper portions of the plurality of upper surface terminals, respectively, through the plurality of through holes; Preparing a sacrificial substrate and forming a plurality of tips on the sacrificial substrate with a conductive metal; Forming a plurality of body parts of a predetermined length to correspond to upper portions of the plurality of tip parts, respectively, with a conductive metal; And Positioning the sacrificial substrate on an upper portion of the substrate such that the plurality of body parts respectively correspond to the plurality of base ends, and bonding the plurality of body parts to the corresponding plurality of base ends, respectively; Probe card manufacturing method comprising a. Preparing a substrate having a plurality of wiring units therein and a plurality of upper surface terminals electrically connected to one ends of the plurality of wiring units and attached to an upper portion thereof; Preparing a silicon wafer sacrificial substrate, and forming a plurality of through holes on the silicon wafer sacrificial substrate to respectively correspond to positions corresponding to the plurality of top terminals; Placing the silicon wafer sacrificial substrate on the substrate such that the plurality of through holes formed in the plurality of upper surface terminals correspond to each other; Forming a plurality of proximal ends by introducing conductive metals into the upper portions of the plurality of upper surface terminals, respectively, through the plurality of through holes; Forming a plurality of body parts of a predetermined length to correspond to upper portions of the plurality of base ends, respectively, with a conductive metal; Preparing a sacrificial substrate and forming a plurality of tips on the sacrificial substrate with a conductive metal; And Positioning the sacrificial substrate on the substrate such that the plurality of tip portions correspond to predetermined regions of the plurality of body portions, and bonding the plurality of tip portions to the plurality of body portions; Probe card manufacturing method comprising a.
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100915326B1 (en) * 2007-10-22 2009-09-03 주식회사 파이컴 Method of manufacturing an apparatus for inspecting electric condition
WO2012033338A3 (en) * 2010-09-07 2012-06-14 한국기계연구원 Probe card and method for manufacturing same
KR20200029766A (en) * 2018-09-11 2020-03-19 삼성전자주식회사 Alignment key and probe card including the same

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100915326B1 (en) * 2007-10-22 2009-09-03 주식회사 파이컴 Method of manufacturing an apparatus for inspecting electric condition
WO2012033338A3 (en) * 2010-09-07 2012-06-14 한국기계연구원 Probe card and method for manufacturing same
US9194889B2 (en) 2010-09-07 2015-11-24 Korea Institute Of Machinery & Materials Probe card and manufacturing method thereof
KR20200029766A (en) * 2018-09-11 2020-03-19 삼성전자주식회사 Alignment key and probe card including the same

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