KR101301740B1 - Method for producing probe card and probe card thereby - Google Patents

Abstract

Probe card manufacturing method of the present invention comprises the steps of preparing a substrate having a plurality of wiring portion, and a plurality of upper terminal is electrically connected to one end of the plurality of wiring portion attached to the upper; Preparing a silicon wafer sacrificial substrate, and forming a plurality of first through holes on the silicon wafer sacrificial substrate to correspond to positions corresponding to the plurality of top terminals, respectively; Placing the silicon wafer sacrificial substrate on the substrate such that the plurality of first through holes correspond to the plurality of upper surface terminals; Forming a plurality of proximal end portions by introducing conductive metals into upper portions of the plurality of upper surface terminals, respectively, through the plurality of first through holes; Removing the silicon wafer sacrificial substrate; Preparing a fixed substrate having a plurality of second through holes at positions corresponding to the plurality of base ends; Fixing the fixed substrate on the substrate such that the plurality of base ends are respectively inserted into the plurality of second through holes; And coupling and fixing a plurality of separately formed probes to the plurality of proximal ends respectively inserted into the second through holes.

Using the method of manufacturing a probe card of the present invention, it is not necessary to repeat the formation of the photoresist layer, the etching removal process, the conductive metal plating process, and the polishing process to form the proximal end portion of the probe, thereby reducing the overall process time. The base end of the desired height can be formed by one metal plating process. In addition, by using the method of manufacturing a probe card of the present invention, the probe can be more firmly fixed to the proximal end through the proximal end and the fixed substrate, thereby preventing the probe from being separated from the proximal end during wafer probing.

Probe card

Description

Method for producing probe card and probe card thereby

1 schematically shows a probe card manufactured according to a conventional probe card manufacturing method.

2A to 2C schematically illustrate a substrate preparation step in a method of manufacturing a probe card according to an embodiment of the present invention.

3A to 3C schematically illustrate a step of preparing a sacrificial substrate in a method of manufacturing a probe card according to an embodiment of the present invention.

4A to 4F schematically illustrate a step of forming a proximal end for a probe in a method of manufacturing a probe card according to an embodiment of the present invention.

5A and 5B schematically show a step of manufacturing a probe in a method of manufacturing a probe card according to an embodiment of the present invention.

6A and 6B schematically illustrate a step of manufacturing a probe card by coupling a probe to a proximal end of a probe in a method of manufacturing a probe card according to an embodiment of the present invention.

The present invention relates to a method of manufacturing a probe card, in particular, a method of manufacturing a probe card capable of forming a proximal end for a probe of a probe card using a silicon wafer as a sacrificial substrate, and a probe card manufactured thereby.

A wafer probing apparatus is an apparatus for electrically testing each individual semiconductor chip formed on a wafer by using a probe card, and the probe contacts a metal pad of each individual semiconductor chip so that a test can be performed.

The probe of the probe card for performing the electrical test of each individual semiconductor chip on the wafer is generally used in the form of a needle (also referred to as a 'probe needle'), and each of these probes is mounted on a probe card. However, it is not preferable to mount a needle-shaped probe on a probe card in terms of its manufacturing time and cost.

Therefore, a method of simultaneously manufacturing a plurality of probes using semiconductor etching technology has been studied.

Hereinafter, a method of manufacturing a conventional probe card using a semiconductor etching technique will be described in detail with reference to FIG. 1.

First, as shown in FIG. 1, after the photoresist layer is formed of a photoresist material on the substrate 10, the photoresist layer around the wiring part 11 is etched away, and then the wiring part 11 is etched away. ) Is plated with metal to form a probe 20 for the probe.

Thereafter, a photoresist layer is further formed, the portions corresponding to the beams of the probes are etched away, and then the metals are plated on the etched portions to form the bodies 30 of the probes. To form a tip portion 40 of the probe.

However, in the conventional method, since the thickness of the photoresist layer formed on the substrate 10 is formed by applying a photoresist material, it is difficult to form a predetermined thickness (80 μm) or more. Therefore, when the height of the base end part for a probe of interest was 300 micrometers or more, the photoresist layer was repeated 3 times or more. That is, the photoresist layer formation, the etching removal process, the metal plating process, and the polishing removal process of the protruding metal plating had to be repeated several times or more. Therefore, the process takes a long time, the base end portion 20 is formed in a multi-layer as shown in FIG.

However, in the base end portion 20 formed in this manner, the bonding force between the layers is not good, the process stress is applied in the repeated polishing removal process, so that the yield is low during the manufacturing process, and the metal pad of the semiconductor device repeated during the probing of the wafer. There is a problem that the contact is easily broken.

In order to solve the above problems of the prior art, the present invention provides a novel probe card manufacturing method capable of forming a proximal end for a probe having a sufficient height without repeating the formation of the photoresist layer, the etching removal process, and the polishing removal process. To provide.

In addition, the present invention is to provide a novel probe card manufacturing method that can form the base end of the desired height in one metal plating process.

In addition, the present invention is to provide a probe card having a structure in which a separately formed probe can be more firmly coupled to the proximal end for the probe.

According to an aspect of the present invention, there is provided a method of manufacturing a probe card, the method comprising: preparing a substrate having a plurality of wiring units and a plurality of upper surface terminals electrically connected to one ends of the plurality of wiring units and attached to an upper portion thereof; ; Preparing a silicon wafer sacrificial substrate, and forming a plurality of first through holes on the silicon wafer sacrificial substrate to correspond to positions corresponding to the plurality of top terminals, respectively; Placing the silicon wafer sacrificial substrate on the substrate such that the plurality of first through holes correspond to the plurality of upper surface terminals; Forming a plurality of proximal end portions by introducing conductive metals into upper portions of the plurality of upper surface terminals, respectively, through the plurality of first through holes; Removing the silicon wafer sacrificial substrate; Preparing a fixed substrate having a plurality of second through holes at positions corresponding to the plurality of base ends; Fixing the fixed substrate on the substrate such that the plurality of base ends are respectively inserted into the plurality of second through holes; And coupling and fixing a plurality of separately formed probes to the plurality of proximal ends respectively inserted into the second through holes.

The height of the proximal end may be 300 μm or more.

The fixed substrate may be made of a silicon wafer.

One side of the plurality of probes may be provided with a locking portion consisting of two or more legs.

Engaging portions of the plurality of probes may be elastically coupled to both sides of the plurality of base ends, respectively.

A recess having a predetermined cross-sectional shape is formed by the base end and the second through hole of the fixed substrate, and the locking portion of the probe is inserted into the recess to be coupled to the base end.
An inner diameter of the plurality of second through holes may exceed an inner diameter of the plurality of first through holes.

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The conductive metal may be nickel, nickel cobalt alloy or nickel iron alloy.

According to another aspect of the present invention, a probe card includes: a substrate having a plurality of top terminals; A plurality of proximal end portions formed on upper portions of the plurality of upper surface terminals, respectively; A fixed substrate having a plurality of through holes and fixed to an upper portion of the substrate such that the plurality of base ends are respectively inserted into the corresponding plurality of through holes; And a plurality of probes fixedly coupled between the plurality of through holes and the plurality of proximal end portions respectively inserted therein.

The height of the proximal end may be 300 μm or more, and the fixed substrate may be formed of a silicon wafer.

A recess having a predetermined cross-sectional shape may be formed by the base end and the through hole of the fixed substrate so that the probe is inserted and fixedly coupled to the substrate.

In order to achieve the above technical problem, in the present invention, a mold corresponding to the probe base end is separately formed using a silicon wafer having a thickness corresponding to the height of the target probe end, and the metal is used once. By performing the plating process to form the proximal end for the probe, the proximal end for the probe is formed without repeating the formation of the photoresist layer, the etching removal process, and the polishing removal process, and the probe is separately manufactured and fixed to the proximal end for the probe. It can be fixed more firmly using a substrate.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT Hereinafter, the present invention will be described in detail with reference to preferred embodiments and accompanying drawings, which will be easily understood by those skilled in the art. The present invention may, however, be embodied in many different forms and should not be construed as limited to the embodiments set forth herein.

First, as shown in FIG. 2A, a silicon substrate or a laminated ceramic substrate is prepared as the substrate 100. The substrate 100 is connected to the wiring part and one end of the wiring part therein, and is connected to the upper surface terminal 130 attached to the upper surface of the substrate 100 and the other end of the wiring part and the lower surface terminal attached to the lower surface of the substrate 100. There is no particular limitation as long as it is formed, but is preferably made of a ceramic material and a commercially available space transformer may be used. In the drawings of the present invention, for convenience of description, the wiring part and the bottom terminal are not illustrated, and only one top terminal 130 is illustrated on the substrate 100. However, the number of the top terminal 130 is not limited, and generally, It is formed in plural.

The metal films 110 and 120 are formed in two layers below the prepared substrate 100. The metal films 110 and 120 may be formed by applying a chemical vapor deposition (CVD) method or a sputtering method, but the formation method is not particularly limited. The metal films 110 and 120 are used as electrodes in a plating process for forming a proximal end. In the embodiment of the present invention, the metal film is formed of two layers, but is not limited thereto.

Thereafter, as shown in FIG. 2B, a photoresist material was applied on the substrate 100 and baked at a constant temperature to form a photoresist layer 200.

Here, the photoresist material may be a positive photoresist material that is a material that breaks the bond chain of the polymer in the exposed site when exposed, or a negative photoresist material that the bond chain of the polymer in the exposed site is firm when exposed. . The photoresist layer 200 thus formed generally has a thickness of 80 μm or less.

As such, when the photoresist layer 200 is formed, only a portion corresponding to the upper terminal 130 of the substrate is selectively exposed through a mask (not shown), so that the photo of the exposed portion of the photoresist layer 200 is exposed. The resist material is altered and removed using an etching solution that can selectively etch away the altered portion. As a result, only a portion of the photoresist layer 200 corresponding to the upper surface terminal 130 is etched away to form a mold portion 210 for the proximal end portion of the probe as shown in FIG. 2C. The etching method is not particularly limited, and dry etching may be used in addition to the wet etching method described above.
In FIG. 2C, the thickness of the photoresist layer 200 is shown to be thicker than the height of the upper terminal 130, but the thickness of the photoresist layer 200 is not particularly limited as long as the thickness of the photoresist layer 200 is greater than or equal to the height of the upper terminal 130.

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Thereafter, the bonding material may be further applied on the photoresist layer 200 except for the mold part 210. This bonding material assists in bonding to the silicon wafer sacrificial substrate in a later process.

Next, after preparing the silicon wafer as a sacrificial substrate, as shown in Figure 3a, the silicon wafer is polished to a thickness corresponding to the height of the base end portion for the probe to be manufactured. This polishing method is not particularly limited and preferably uses chemical mechanical polishing (CMP). In the present invention, the height of the proximal end is not particularly limited, and may be preferably 300 μm or more. As described above, in the present invention, since the thickness of the probe is prepared to correspond to the height of the probe base by polishing the silicon wafer whose thickness exceeds the height of the probe base, the photoresist is formed to match the height of the probe base. There is no need to repeat the etching removal step, the polishing removal step, and the like.

Thereafter, as shown in FIG. 3B, the portion corresponding to the proximal end portion of the probe to the silicon wafer thus adjusted in thickness is performed until the silicon wafer is penetrated by the conventional deep reactive ion etching method. The base end through-hole 310 is formed.

In addition, the oxide layers 410 and 420 are formed by oxidizing both surfaces of the silicon wafer on which the through holes 310 are formed. This oxide film is used as an insulating film in a metal plating process later.

Thereafter, the silicon wafer sacrificial substrate 300 having the through hole 310 corresponding to the proximal end portion of the probe is aligned with the substrate 100 prepared by FIG. 2. At this time, as shown in Figure 4a, the through hole 310 of the sacrificial substrate 300 is positioned on the mold portion 210 of the substrate 100 to communicate with each other, so that the sacrificial substrate 300 and the substrate 100 Align the position.

Thereafter, the sacrificial substrate 300 and the substrate 100 are pressed to each other and bonded. In this case, a bonding material may be applied between the sacrificial substrate 300 and the substrate 100 to assist the bonding.

Thereafter, as shown in FIG. 4B, the metal parts 110 and 120 are used as electrodes to fill the inside of the mold part 210 and the through hole 310 with a conductive metal according to an electroplating method. Form 500.

After forming the proximal end 500, as shown in FIG. 4C, the conductive metal portion protruding out of the through hole 310 is ground by chemical mechanical polishing (CMP) or the like. At this time, the thickness of the base end 500 can be adjusted again to a predetermined thickness.

The base end 500 formed as described above is electrically connected to the upper terminal 130 of the substrate 100 and the wiring unit connected to the upper terminal.

In this case, as the conductive metal used for forming the proximal end, a metal having excellent elasticity and conductivity is used. Preferably, nickel or nickel alloy, specifically nickel cobalt alloy or nickel iron alloy is used. As described above, since the proximal end is made of a metal having excellent elastic force, the proximal end according to an embodiment of the present invention can be coupled with a stronger bonding force when elastically coupled with the engaging portion of the probe to be described later.

Thereafter, as shown in FIG. 4D, after the silicon wafer sacrificial substrate 300 is selectively etched away with an etching solution such as KOH, as shown in FIG. 4E, the oxide film 420 and the photoresist layer 200 are removed. ) Is selectively etched away. At this time, alkali solvents, such as acetone, are used suitably as an etching solvent.

As shown in FIG. 4F, the substrate 100 on which the probe base 500 is formed is removed by removing the metal films 110 and 120 used as electrodes in the plating process.

At this time, the proximal end 500 electrically connects the probe and the upper terminal 130 of the substrate 100 to each other. In the present invention, the proximal end 500 is preferably formed at a suitable height according to the shape of the corresponding probe.

Meanwhile, a probe fixed by the proximal end portion 500 for the probe thus formed is separately prepared. Thus prepared probe is preferably to have a planar shape, that is, two-dimensional shape in accordance with a semiconductor process such as MEMS (MEMS).

Hereinafter, a method of manufacturing a two-dimensional probe will be described with reference to FIGS. 5A and 5B.

First, a silicon substrate is prepared using the sacrificial substrate 600, and then a metal seed layer is formed by coating a metal on the prepared sacrificial substrate 600 by chemical vapor deposition (CVD) or sputtering. This metal seed layer is later used as an electrode in the plating process for probe formation.

Thereafter, a photoresist material is applied on the metal seed layer to form a photoresist layer, and a mask having an exposed area corresponding to the shape of the probe to be manufactured is formed on the formed photoresist layer, and then the mask is removed. Through exposing the portion corresponding to the shape of the probe to be fabricated in the photoresist layer to deteriorate, and selectively remove the altered photoresist layer to form a mold for the probe.

As shown in FIG. 5A, a conductive metal is introduced into the mold thus formed to form a probe 610, and the sacrificial substrate 610, the photoresist layer, and the metal seed layer are selectively etched away from FIG. 5B. Obtain a probe 610 as shown.

In this case, a metal having excellent elasticity and conductivity is used as the conductive metal for frequent contact with the metal pad of the semiconductor device during wafer probing. Preferably, nickel or a nickel alloy, specifically, a nickel cobalt alloy or a nickel iron alloy is used. Is used. As described above, since the probe according to the embodiment of the present invention is made of a metal having excellent elastic force, the probe may be coupled with a stronger bonding force when elastically coupled to the base end portion 500 for the probe.

The probe 610 has a particular limitation on its shape, but is formed in a shape having a locking part 612 composed of two or more legs to be firmly coupled to both sides of the base end 500 with elastic force. It is more preferable that an empty space is formed between the two legs of the locking portion as shown in FIG. 5B. In this shape, the locking portion 612 has an elastic force in the empty space direction. Therefore, when the legs of the probe 610 having the locking portion 612 are coupled to both side surfaces of the base end 500, the probe 610 is connected to the base end 500 of the substrate 100 due to the elastic force of the locking portion 612. It is tightly coupled so that it is not easily separated. However, the shape of the probe 610 may be in various forms according to the purpose of the invention and for easy contact with the metal pad of the semiconductor device to be inspected, and specifically may include a spring region in the structure.

The probe 610 prepared to have a two-dimensional shape is fixedly coupled to the proximal end 500, and a fixing substrate 700 as shown in FIG. 6A is used for more firm coupling.

 Specifically, the fixing substrate 700 is used to more firmly fix the combination of the probe 610 and the base end 500, the material is not particularly limited, but is preferably formed of a silicon wafer substrate.

The fixing substrate 700 includes a through hole 710 formed at a position corresponding to the base end 500 on the substrate 100. The through hole 710 is formed by passing through the fixed substrate 700 by an active ion etching method.

In addition, an insulating film (not shown) is formed on both surfaces of the fixed substrate 700 on which the through hole 710 is formed. Such an insulating layer prevents electrical signals from being conducted between the probe and the fixed substrate 700 when the probe is inserted and fixed. Here, the insulating film may be an oxide film such as an oxide or nitride, or an insulating material such as parylene.

At this time, the inner diameter of the through hole 710 is formed longer than the length of the proximal end 500, as shown in Figure 6a, so that the proximal end 500 can be freely inserted into the through hole 710.

The inner diameter of the through hole 710 is preferably formed to a value corresponding to the length of the proximal end 500 and the thickness of each leg of the locking portion 612 of the probe 610. In this case, the locking portion 612 of the probe 610 can be firmly coupled and fixed between the fixing substrate 700 and the base end 500.

In addition, the thickness of the fixing substrate 700 is formed to be higher than the height of the proximal end 500. Preferably, when the probe 610 is coupled to the proximal end 500, the body of the probe 610 is fixed to the fixing substrate. It is formed to a height that can contact the upper surface of 700.

When the fixing substrate 700 is formed as described above, the fixing substrate 700 may be inserted into the through hole 710 of the fixing substrate 700 so that the proximal end 500 of the substrate 100 may be inserted into the fixing substrate 700. After the upper portion is disposed, the fixing substrate 700 and the substrate 100 are fixed to each other as shown in FIG. 6A.

Thereafter, as illustrated in FIG. 6B, the probe 610 is pushed into the space between the base end 500 and the through hole 710 so that the probe 610 is elastically coupled to the base end 500 to fix the probe card. Will form. In this case, the probe 610 is electrically connected to the upper surface terminal 130 of the substrate 100 through the base end 500.

In the exemplary embodiment of the present invention, the proximal end 500 may be formed in various shapes. For example, the proximal end 500 and the fixed substrate may be easily coupled to both sides of the proximal end 500. A recess having a predetermined cross-sectional shape may be formed by the through hole 710 of 700. When recesses are formed at both sides of the proximal end 500 in this manner, as shown in FIG. 6B, both legs of the locking portion 610 of the probe are inserted into the recess and firmly coupled to both sides of the proximal end 500. It becomes possible.
2 to 6 illustrate that one probe 610 is coupled to one proximal end 500 for convenience, but in the actual probe card, a plurality of probes 610 are coupled to the plurality of proximal end 500, respectively. You will configure a probe card.

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As described above, the probe card manufactured by the method of manufacturing a probe card according to the present invention is formed on the upper portion of the plurality of upper terminals 130 provided at the upper portion of the substrate 100, respectively, to a desired height. A plurality of probes 610 are coupled to the plurality of base ends 500 through the fixing substrate 700, respectively. Here, the fixed substrate 700 has a plurality of through holes 710, the plurality of proximal end portions 500 are respectively inserted into the corresponding plurality of through holes 710, and the plurality of probes 610 may be provided. It is firmly fixed between the plurality of through holes 710 and the plurality of proximal end portions 500 respectively inserted therein.

Using the method of manufacturing a probe card of the present invention, there is no need to repeat the formation of the photoresist layer, the etching removal process, the conductive metal plating process, and the polishing process to form the proximal end portion of the probe. It is shortened and the base end part of desired height can be formed by one metal plating process.

On the other hand, using the method of manufacturing the probe card of the present invention, it is possible to minimize the formation of the photoresist layer, etching removal process, conductive metal plating process, and polishing process, thereby minimizing the process stress, and thus during the manufacturing process The collapse of the proximal end of the probe can be minimized.

In addition, by using the method of manufacturing a probe card of the present invention, the probe can be more firmly fixed to the proximal end through the proximal end and the fixed substrate, thereby preventing the probe from being separated from the proximal end during wafer probing.

While the present invention has been described in connection with what is presently considered to be practical exemplary embodiments, it is to be understood that the invention is not limited to the disclosed embodiments, but, on the contrary, Do.

Claims (12)

Preparing a substrate having a plurality of wiring units therein and a plurality of upper surface terminals electrically connected to one ends of the plurality of wiring units and attached to an upper portion thereof; Preparing a silicon wafer sacrificial substrate, and forming a plurality of first through holes on the silicon wafer sacrificial substrate to correspond to positions corresponding to the plurality of top terminals, respectively; Positioning the silicon wafer sacrificial substrate on the substrate such that the plurality of first through holes formed in the plurality of top terminals correspond to each other; Forming a plurality of proximal end portions by introducing conductive metals into upper portions of the plurality of upper surface terminals, respectively, through the plurality of first through holes; Removing the silicon wafer sacrificial substrate; Preparing a fixed substrate having a plurality of second through holes; Fixing the fixed substrate on the substrate such that the plurality of base ends are respectively inserted into the plurality of second through holes; And Coupling and fixing a plurality of separately formed probes to the plurality of base ends respectively inserted into the second through holes; Probe card manufacturing method comprising a. The method of claim 1, The probe card manufacturing method, characterized in that the height of the proximal end is 300㎛ or more. The method of claim 1, The probe card manufacturing method according to claim 1, wherein one side of the plurality of probes is provided with a locking part including two or more leg parts. The method of claim 3, The method of manufacturing the probe card, characterized in that the engaging portions of the plurality of probes are respectively elastically coupled to the plurality of base ends. 5. The method of claim 4, And a concave portion having a predetermined cross-sectional shape is formed by the proximal end and the second through hole of the fixed substrate, and the engaging portion of the probe is inserted into the concave portion and coupled to the proximal end. delete The method of claim 1, The inner diameter of the plurality of second through holes exceeds the inner diameter of the plurality of first through holes. The method of claim 1 And the conductive metal is nickel, nickel cobalt alloy or nickel iron alloy. A substrate having a plurality of top terminals; A plurality of proximal end portions formed on upper portions of the plurality of upper surface terminals, respectively; A fixed substrate having a plurality of through holes and fixed to an upper portion of the substrate such that the plurality of base ends are respectively inserted into the corresponding plurality of through holes; And A plurality of probes fixedly coupled between the plurality of through holes and the plurality of base ends respectively inserted therein; Probe card comprising a. 10. The method of claim 9, And said height of said proximal end is 300 占 퐉 or more. 10. The method of claim 9, And a yaw portion having a predetermined cross-sectional shape is formed by a base end portion and a through hole of the fixed substrate so that the probe is inserted and fixedly coupled to the base end portion. delete

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