KR20040003476A - Method of forming contact pattern in semiconductor device - Google Patents

Method of forming contact pattern in semiconductor device Download PDF

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Publication number
KR20040003476A
KR20040003476A KR1020020038191A KR20020038191A KR20040003476A KR 20040003476 A KR20040003476 A KR 20040003476A KR 1020020038191 A KR1020020038191 A KR 1020020038191A KR 20020038191 A KR20020038191 A KR 20020038191A KR 20040003476 A KR20040003476 A KR 20040003476A
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South Korea
Prior art keywords
forming
mask
semiconductor device
film
mask film
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KR1020020038191A
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Korean (ko)
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주준용
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삼성전자주식회사
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Priority to KR1020020038191A priority Critical patent/KR20040003476A/en
Publication of KR20040003476A publication Critical patent/KR20040003476A/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
    • H01L21/033—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers
    • H01L21/0334—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane
    • H01L21/0337—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising inorganic layers characterised by their size, orientation, disposition, behaviour, shape, in horizontal or vertical plane characterised by the process involved to create the mask, e.g. lift-off masks, sidewalls, or to modify the mask, e.g. pre-treatment, post-treatment

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

PURPOSE: A method for forming a contact pattern of a semiconductor device is provided to be capable of easily forming a contact hole by using a hard mask as the contact pattern. CONSTITUTION: After forming a mask layer(12) at the upper portion of a semiconductor substrate(10), a photoresist pattern is formed at the upper portion of the mask layer by depositing and patterning a photoresist layer. Then, the mask layer is selectively patterned by carrying out a predetermined etching process using the photoresist pattern as an etching mask. A hard mask is formed at the resultant structure by carrying out a silicidation process at the etched mask layer. Preferably, the mask layer contains the silicon grown by carrying out a silicon selective growth process.

Description

반도체소자의 콘택 패턴 형성방법{Method of forming contact pattern in semiconductor device}Method of forming contact pattern in semiconductor device

본 발명은 반도체소자의 콘택 패턴 형성 방법에 관한 것이다.The present invention relates to a method of forming a contact pattern of a semiconductor device.

일반적으로 반도체 장치의 각종 패턴은 리소그래피(lithography) 기술에 의하여 형성된다는 것은 널리 알려져 있다. 상기 리소그래피 기술에 의하면, 반도체 웨이퍼상의 절연막이나 도전막 등 패턴을 형성하여야 할 막 위에 X선이나 레이저, 자외선 등과 같은 광선의 조사에 의해 용해도가 변화하는 감광막을 형성하고, 이 감광막의 소정 부위를 마스크를 이용하여 노광시킨 후, 현상액에 대하여 용해도가 큰 부분을 제거하여 포토레지스트 패턴을 형성하고, 상기 패턴을 형성하여야 할 막의 노출된 부분을 식각에 의해 제거하여 콘택홀, 배선 등과 같은 각종 패턴을 형성한다.In general, it is well known that various patterns of semiconductor devices are formed by lithography techniques. According to the lithography technique, a photosensitive film whose solubility is changed by irradiation with light such as X-rays, lasers or ultraviolet rays is formed on a film on which a pattern such as an insulating film or a conductive film on a semiconductor wafer is to be formed, and a predetermined portion of the photosensitive film is masked. After exposing to a photoresist, a photoresist pattern is formed by removing a portion having high solubility with respect to a developer, and an exposed portion of a film to be formed is removed by etching to form various patterns such as contact holes and wiring. do.

이때, 포토레지스트 패턴을 식각마스크로 하여 피식각막을 식각하여 콘택을 형성할 경우가 있는 데, 상기 포토레지스트 패턴은 상술한 공정 등을 이동하는 도중에 다양한 공정변수이 발생하여 의도한 형태와 다른 포토레지스트 패턴을 형성한다. 이러한 공정변수에 따라 변화된 포토레지스트 패턴을 통해 콘택을 형성하게 되면, 콘택의 사이즈 및 위치 등이 변형되어 공정손실을 가져오게 되는 문제점이 있다.In this case, a contact may be formed by etching the etched film using the photoresist pattern as an etch mask. In the photoresist pattern, various process variables are generated while moving the above-described process and the like, and thus the photoresist pattern is different from the intended shape. To form. When the contact is formed through the photoresist pattern changed according to the process variable, there is a problem in that the size and position of the contact are deformed, resulting in process loss.

상술한 문제점을 해결하기 위한 본 발명은 각 공정의 공정변수에 따라 콘택 패턴을 형성할 수 있도록 하는 반도체소자의 콘택 패턴형성방법을 제공함에 있다.The present invention for solving the above problems is to provide a contact pattern forming method of a semiconductor device to form a contact pattern according to the process parameters of each process.

도 1 내지 도 3은 본 발명에 따른 반도체소자의 콘택 패턴형성방법을 나타낸 공정순서도이다.1 to 3 are process flowcharts showing a contact pattern forming method of a semiconductor device according to the present invention.

상기 목적을 달성하기 위하여 본 발명에서는, 반도체기판 상에 마스크 막질을 형성하고, 이 마스크 막질에 포토레지스트 패턴을 형성하는 단계; 및 상기 포토레지스트 패턴을 식각 마스크로 하여 상기 마스크 막질을 식각하고, 이 식각한 마스크 막질에 실리사이데이션 공정을 수행하여 하드마스크를 형성하는 단계; 로 이루어진다. 상기 마스크 막질은 실리콘 선택적 성장공정을 통해 성장된 실리콘이 다량으로 함유된 층이다. 상기 실리사이데이션 공정은 상기 마스크 막질에 금속물질을 형성하여 이를 열처리함으로써 실리사이드를 형성하는 공정이다.In order to achieve the above object, in the present invention, forming a mask film on the semiconductor substrate, and forming a photoresist pattern on the mask film; And etching the mask film by using the photoresist pattern as an etch mask, and performing a silicidation process on the etched mask film to form a hard mask. Is made of. The mask film is a layer containing a large amount of silicon grown through a silicon selective growth process. The silicidation process is a process of forming a silicide by forming a metal material on the mask film and heat-treating it.

또, 상기 금속물질은 Ti, Co와 같은 물질인 것이 바람직하다.In addition, the metal material is preferably a material such as Ti, Co.

이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예에 대해 상세히 설명한다.Hereinafter, with reference to the accompanying drawings will be described in detail a preferred embodiment of the present invention.

도 1 내지 도 3은 본 발명에 따른 반도체소자의 콘택 패턴 형성방법에 대한 일 실시 예를 나타낸 공정순서도이다.1 to 3 are flowcharts showing an embodiment of a method for forming a contact pattern of a semiconductor device according to the present invention.

도 1은 실리콘막, 절연막, 또는 도전막 등을 형성한 반도체기판(10) 상에 마스크 막질(12)을 형성하고, 이 마스크 막질(12)에 포토레지스트 패턴(PR)을 형성한다. 이 마스크 막질(12)은 실리콘 선택적 성장(Silicon Epitaxial Growth ; SEG)공정을 통해 실리콘이 다량으로 함유된 층인데, 이는 실리사이데이션(Silidation)공정을 수행하여 하드마스크를 형성하기 위함이다.1, a mask film 12 is formed on a semiconductor substrate 10 on which a silicon film, an insulating film, or a conductive film is formed, and a photoresist pattern PR is formed on the mask film 12. As shown in FIG. The mask film 12 is a layer containing a large amount of silicon through a silicon epitaxial growth (SEG) process to form a hard mask by performing a silication process.

도 2는 상기 포토레지스트 패턴(PR)을 식각 마스크로 하여 상기 마스크 막질(12)을 식각하고, 이 식각한 마스크 막질(12)에 실리사이데이션 공정을 수행한다. 이 실리사이데이션 공정은 상기 마스크 막질(12)에 실리사이드(silicide, 13)를 형성함으로써 하드마스크(14)를 형성하는 공정을 말하는 것이다. 다시 말해, 상기 마스크 막질(12)에 Ti, Co와 같은 금속물질을 형성하여 이를 열처리함으로써 실리사이드(13)를 형성하는데, 이 실리사이드(13)로 인해 상기 마스크 막질(12)은 하드마스크(14)를 형성한다. 이때, 상기 마스크 막질(12)을 실리사이데이션 공정을 수행하여 하드마스크(14)로 형성하는 이유는 이후 콘택형성공정 중 사진/식각공정에서 상기 마스크막질(12)을 그대로 사용하면 마스크막질이 손상되어 원하는 콘택을 얻는 것이 어렵지만 하드마스크(14)를 사용하면 손상을 방지할 수 있어 원하는콘택을 형성하기는 용이할 수 있다. 따라서, 마스크막질(12)를 실리사이데이션공정을 수행하여 하드마스크(14)를 형성한다.2, the mask film 12 is etched using the photoresist pattern PR as an etch mask, and a silicidation process is performed on the etched mask film 12. This silicidation step refers to a step of forming a hard mask 14 by forming silicide 13 in the mask film 12. In other words, a silicide 13 is formed by forming a metal material such as Ti and Co on the mask film 12 and heat-treating it, which causes the mask film 12 to form a hard mask 14. To form. In this case, the mask film 12 may be formed as a hard mask 14 by performing the silicidation process. If the mask film 12 is used as it is in the photo / etch process during the contact forming process, the mask film is damaged. Although it is difficult to obtain a desired contact, the use of the hard mask 14 can prevent damage and thus can easily form a desired contact. Accordingly, the mask film 12 is subjected to a silicidation process to form the hard mask 14.

도 3은 상술한 바와 같이 형성한 하드마스크(14)를 식각마스크로 하여 실리콘막, 절연막 또는 도전막등이 형성된 반도체기판(10)을 식각하여 콘택(C)을 형성한다.3, the contact C is formed by etching the semiconductor substrate 10 on which the silicon film, the insulating film, or the conductive film is formed using the hard mask 14 formed as described above as an etching mask.

이상에서 살펴본 바와 같이 하드마스크를 콘택 패턴으로 함으로써 콘택을 용이하게 형성할 수 있다.As described above, the contact may be easily formed by using the hard mask as the contact pattern.

이상에서 살펴본 바와 같이 본 발명에 의하면, 하드마스크를 콘택 패턴으로 함으로써 콘택을 용이하게 형성할 수 있는 효과가 있다.As described above, according to the present invention, there is an effect that a contact can be easily formed by using a hard mask as a contact pattern.

Claims (4)

반도체기판 상에 마스크 막질을 형성하고, 이 마스크 막질에 포토레지스트 패턴을 형성하는 단계; 및Forming a mask film on a semiconductor substrate, and forming a photoresist pattern on the mask film; And 상기 포토레지스트 패턴을 식각 마스크로 하여 상기 마스크 막질을 식각하고, 이 식각한 마스크 막질에 실리사이데이션 공정을 수행하여 하드마스크를 형성하는 단계; 로 이루어진 것을 특징으로 하는 반도체소자의 콘택 패턴형성방법.Etching the mask film by using the photoresist pattern as an etching mask, and performing a silicidation process on the etched mask film to form a hard mask; Method for forming a contact pattern of a semiconductor device, characterized in that consisting of. 제 1 항에 있어서, 상기 마스크 막질은The method of claim 1, wherein the mask film is 실리콘 선택적 성장공정을 통해 성장된 실리콘이 다량으로 함유된 층인 것을 특징으로 하는 반도체소자의 콘택 패턴형성방법.Method for forming a contact pattern of a semiconductor device, characterized in that the layer containing a large amount of silicon grown through the silicon selective growth process. 제 1 항에 있어서, 상기 실리사이데이션 공정은The method of claim 1, wherein the silicidation process 상기 마스크 막질에 금속물질을 형성하여 이를 열처리함으로써 실리사이드를 형성하는 공정인 것을 특징으로 하는 반도체소자의 콘택 패턴 형성방법.And forming a metal material in the mask film and heat-treating the same to form a silicide. 제 1 항에 있어서, 상기 금속물질은The method of claim 1, wherein the metal material Ti, Co와 같은 물질인 것을 특징으로 하는 반도체소자의 콘택 패턴 형성방법.Method for forming a contact pattern of a semiconductor device, characterized in that the material, such as Ti, Co.
KR1020020038191A 2002-07-03 2002-07-03 Method of forming contact pattern in semiconductor device KR20040003476A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101301740B1 (en) * 2007-06-27 2013-08-29 주식회사 코리아 인스트루먼트 Method for producing probe card and probe card thereby

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101301740B1 (en) * 2007-06-27 2013-08-29 주식회사 코리아 인스트루먼트 Method for producing probe card and probe card thereby

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