KR100627977B1 - Vertical-type probe manufacturing method - Google Patents

Abstract

The present invention relates to a method for manufacturing a vertical probe using a sacrificial substrate or a flotation method on a circuit board.

In the present invention, in the method for manufacturing a vertical probe having a plurality of tips spaced at regular intervals below the body portion by using a sacrificial substrate, forming a first protective film pattern having a pattern of the cross section of the tip portion on the sacrificial substrate A first step of making; Forming a trench having a predetermined depth by performing an etching process using the first passivation layer pattern; Removing the first passivation layer pattern, forming a second passivation layer pattern having a pattern of a cross section of the body portion of the unit probe on the sacrificial substrate, and performing an etching process to increase the depth of the trench; A fourth step of forming a probe by filling a conductive material in the trench, and then removing the second protective layer pattern; A fifth step of bonding the upper end of the probe to the bump formed on the circuit board, and removing the sacrificial substrate; Disclosed is a vertical probe manufacturing method comprising a.

Vertical probe, MEMS, trench, flotation, incision, hollow, stepped

Description

Vertical probe manufacturing method

1a to 1c is a view for explaining the problem of the conventional cantilever probe,

2A to 2I are side cross-sectional views illustrating one embodiment of a vertical probe manufacturing method according to the present invention;

3A to 3F are side cross-sectional views illustrating another embodiment of the vertical probe manufacturing method according to the present invention;

Figure 4a to 4f is a side cross-sectional view illustrating another embodiment of a vertical probe manufacturing method according to the present invention,

5A and 5B are partial perspective and bottom views illustrating one embodiment of a vertical probe made by the present invention;

6A and 6B are side cross-sectional views illustrating a state of use of the vertical probe of FIG. 5A;

7 is a partial perspective view showing another embodiment of a vertical probe manufactured by the present invention;

8 is a side cross-sectional view showing a state of use of the vertical probe of FIG.

9 is a partial perspective view showing a hollow vertical probe manufactured according to the present invention.

<Description of the symbols for the main parts of the drawings>

10: Sacrificial Substrates 11: Shield

12: first photoresist 13: trench

14, 17, 54: second protective film pattern 15, 52: seed layer

16: Body 18,55: third protective film pattern

20,50: probe substrate 21,51a: bump

30: vertical probe 31: body

32,56a: tip 33: incision

41, 42: electrode pad 51: first protective film pattern

54a, 55a: body 56: fourth protective film pattern

The present invention relates to a method of manufacturing a vertical probe formed to correspond to a contact pad of a highly integrated semiconductor device, and more particularly, to a method of manufacturing a vertical probe of a MEMS method using a sacrificial substrate and a trench and a probe directly on a probe circuit board. It relates to a vertical probe manufacturing method of the flotation method to form a.

The semiconductor manufacturing process consists of arranging a plurality of chips on a silicon wafer according to a series of processes, then packaging, cutting and separating the chips into individual chips. In this case, in order to package and cut a plurality of chips formed on the silicon wafer, a process of checking an operation by applying an electrical signal to each chip is essential, which is called a semiconductor inspection process. The inspection process is performed by a probe card having a contact to correspond to a plurality of chips formed on a silicon wafer. The contact is in contact with the chip on the silicon wafer to apply an electrical signal to check whether the chip is normal. It is done. Hereinafter, in the present invention, the contact is referred to as a probe.

Conventional needle-type probes are used by bending a needle having a tip formed at one end, placing each needle at a predetermined position, and then bonding and fixing the needle to a fixture using epoxy to solder the main circuit board. . However, in order to stably contact a probe with a contact pad of a semiconductor integrated circuit, a predetermined elastic force is required for the probe. Such needle-type probes have a problem in that they are deformed or their horizontality and position are distorted in case of repeated use. In addition, the needle-type probe takes a lot of space, it is difficult to cope with the pitch of the highly integrated semiconductor device, there is a problem that the interference between the signals through a plurality of needles can not be made accurate inspection.

Meanwhile, a cantilever type probe has been proposed to solve the problem of the needle type probe. The cantilever probe has a bump formed perpendicularly to the probe substrate and forms a horizontal support beam contacting the probe tip and the probe tip, respectively, on the sacrificial substrate to bond the upper end of the bump and one end of the support beam to the sacrificial substrate. Complete by removing Cantilever probes have been used for the inspection of highly integrated semiconductor devices. However, since the support beam is horizontally positioned even in such a cantilever type probe, it is difficult to cope with the pitch spacing and pad arrangement of the semiconductor device, which are more highly integrated due to technological development. That is, as illustrated in FIG. 1A, a contact as shown in FIG. 1B is used to inspect a contact pad 6 formed on one of the plurality of semiconductor devices 5 that are arranged in a rectangular shape on an existing silicon wafer. The pad 6 and the cantilever-type probe 8 may be contacted. However, with respect to the structure of the contact pad 6 'of the semiconductor device 5', which is more highly integrated as shown in FIG. 1C, it is difficult to achieve a contact structure with the conventional cantilever probe 8.

The vertical probe has been developed to overcome the problems of the needle probe and the cantilever probe as described above and to easily cope with the pitch to pad arrangement of the highly integrated semiconductor device. Examples of such vertical probes include those described in Korean Patent Application No. 2002-66197 filed Oct. 29, 2002, and Korean Patent Application No. 2003-16634 filed March 17, 2003 by the present applicant. As shown.

Meanwhile, the present applicant has proposed a method of manufacturing a vertical probe in Patent Application No. 2002-38512 filed July 4, 2002 and Patent Application No. 2003-49814 filed July 21, 2003. .

An object of the present invention is to improve the manufacturing method of the vertical probe presented above, to provide a vertical probe manufacturing method of the MEMS technology method to form a trench on the sacrificial substrate. In addition, an object of the present invention relates to an improved method for manufacturing a vertical probe, and to provide a method for manufacturing a vertical probe using a flotation method directly on the probe circuit board.

In order to achieve the above object, the present invention, in the method for manufacturing a vertical probe having a plurality of tips spaced apart at regular intervals below the body portion using a sacrificial substrate, having a pattern of the cross section of the tip portion on the sacrificial substrate Forming a first passivation layer pattern; Forming a trench having a predetermined depth by performing an etching process using the first passivation layer pattern; Removing the first passivation layer pattern, forming a second passivation layer pattern having a pattern of a cross section of the body portion of the unit probe on the sacrificial substrate, and performing an etching process to increase the depth of the trench; A fourth step of forming a probe by filling a conductive material in the trench, and then removing the second protective layer pattern; Bonding the upper end of the probe to the bump formed on the circuit board, and removing the sacrificial substrate; and a fifth step of providing a vertical probe manufacturing method comprising a.

In order to achieve the above object, the present invention provides a method for manufacturing a vertical probe having a plurality of tips spaced apart at regular intervals below the body portion on the circuit board, the method having a bump-shaped pattern on the circuit board A first step of forming a protective film pattern, and forming a bump by filling a conductive material in the first protective film pattern; A second step of forming a second passivation layer pattern on an upper surface of the first passivation layer pattern, and filling a conductive material in the second passivation layer pattern to form a body part integrally formed with the bumps; A third step of forming a third passivation layer pattern having a pattern of the tip portion on an upper surface of the second passivation layer pattern, and filling a conductive material in the third passivation layer pattern to form a tip portion integrally formed with the body portion; ; And a fourth step of removing the first, second and third passivation layer patterns.

In order to achieve the above object, the present invention, in the method for manufacturing a vertical probe having a plurality of tips spaced apart at regular intervals below the body portion by using a sacrificial substrate, 1st step of forming a protective film pattern; Forming a trench having a predetermined depth by performing an etching process using the first passivation layer pattern; A third step of removing the first passivation layer pattern and forming a tip part by filling a conductive material in the trench; A fourth step of forming a second passivation layer pattern having a pattern on the top surface of the sacrificial substrate, and a body portion extending integrally with the tip part by embedding a conductive material in the second passivation layer pattern; Removing the second protective layer pattern, bonding the upper end of the body portion to a bump formed on a circuit board, and removing the sacrificial substrate; and a method of manufacturing a vertical probe, the method comprising: to provide.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.

One embodiment of the vertical probe manufacturing method according to the invention, as shown in Figures 2a to 2i. That is, as shown in FIG. 2A, a passivation layer 11 made of an oxide film is formed on the sacrificial substrate 10 made of silicon, such as (10). In addition, the first photoresist 12 is coated on the passivation layer 11 to form a passivation layer pattern to be used as an etching mask of an etching process. The protective film 11 may be formed by a thermal oxidation process, and the first photoresist 12 may be formed on the sacrificial substrate 10 by a spin coating method. Can be formed.

Next, by exposing and developing the first photoresist 12 using a first pattern mask (not shown) defining a tip of the probe, the photoresist pattern 12 'as shown in FIG. 2B is exposed. Form. In the present embodiment, as shown in the partially enlarged view of FIG. 2B, the photoresist pattern 12 ′ is formed with four patterns P1 in the circumferential direction so as to have four probe tips per probe, but is not limited thereto. In addition, the said pattern P1 can be made into any two or more. In addition, the cross section of the tip may be formed in a rectangular shape instead of a cylindrical shape.

Next, on the sacrificial substrate 10 illustrated in FIG. 2B, the protective film 11 is wet or dry etched using the photoresist pattern 12 ′ to define an area in which a trench is to be formed in a subsequent process. After forming one protective film pattern (11 'of FIG. 2C), the photoresist pattern 12' is removed.

In addition, as an optional step, the trench 13 corresponding to the end portion of the probe tip may be formed by performing a wet etching process using the first passivation layer pattern 11 ′ as shown in FIG. 2C. It is formed on the sacrificial substrate (10). According to this process, the trench 13 is formed of a conical to pyramid-shaped space portion, there is an advantage that the end of the probe tip is finally formed as described later to improve the contact with the contact pad.

As shown in FIG. 2D, the depth of the trench 13 is deeper by performing an anisotropic dry etching process using SF 6, C 4 F 8 and O 2 gas through the first passivation layer pattern 11 ′. The dry etching process is one of deep trench etching methods, and is known by a known reactive ion etching (RIE) called a bosch process.

Next, as shown in FIG. 2E, the first passivation layer pattern 11 ′ is removed by wet etching using chemicals. After the above process, the trench 13 has a depth of 60 μm.

Next, as shown in FIG. 2F, a second passivation layer pattern 14 for forming the probe body pattern P2 is formed on the sacrificial substrate 10. The second passivation layer pattern 14 forms the same passivation layer (not shown) as the passivation layer 11 described with reference to FIGS. 2A and 2B, and after the photoresist is coated by spin coating, is exposed. And developing to form a photoresist pattern. The second passivation layer pattern 14 may be formed by etching the passivation layer using the photoresist pattern. After the second passivation layer pattern 14 is formed, the photoresist pattern remaining on the second passivation layer pattern 14 is removed. Then, an anisotropic dry etching process is performed using the second passivation layer pattern 14 to increase the depth of the trench 13 and to form a space corresponding to the probe body on the top. Here, the dry etching process is performed by a known reactive ion etching (RIE) called a Bosch process as a deep trench etching method.

After the above process, the total depth of the trench 13 is 150 μm. Therefore, according to the above process, the tip portion of the vertical probe to be formed by the subsequent plating process is 60㎛, the body portion is 90㎛.

Next, as shown in FIG. 2G, the seed layer 15 is formed on the inner wall surface of the trench 13 by sputtering.

As shown in FIG. 2H, a conductive material such as nickel alloy is embedded in the trench 13 in which the seed layer 15 is formed to form the probes 13 and 16, and then the second passivation layer pattern 14 is formed. Remove At this time, the conductive material embedded in the trench 13 is buried by a method such as chemical vapor deposition (CVD), physical vapor deposition (PVD) or plating, and after filling, the upper surface of the sacrificial substrate 10 is CMP (filled). Planarization by chemical mechanical polishing, etching back and grinding. The second protective layer pattern 14 is removed by wet etching using chemicals.

Finally, as shown in FIG. 2I, the upper end of the probe body portion 16 is bonded to the upper end of the bump 21 formed on the probe substrate 20, and then the sacrificial substrate 10 is removed. Complete the manufacture. Here, the removal of the sacrificial substrate 10 is by wet etching using chemicals.

The vertical probe 30 manufactured by the above method has a body portion 31 and the body portion 31 bonded to the bump 21 of the probe substrate 20 as shown in FIGS. 5A and 5B. The lower end of the circumferential surface is formed as four integrally protruding tip portion (32). The lower end part of the said tip part 32 has a cone-pyramidal shape. The space between the tip portions 32 forms a cutout portion 33.

6A and 6B show a state in which the vertical probe 30 is in contact with the ball type electrode pad 41 and the flat electrode pad 42, respectively. Since the vertical probe 30 deforms as the tip part 32 slides while pressing the electrode pads 41 and 42, the contact area thereof becomes wider, and the edge portion of the end of the tip part 32 is formed by the electrode pad ( 41 and 42 are in contact with each other to prevent damage to the electrode pads 41 and 42. When the contact is released, the tip 32 returns to its original state.
In addition, in the tip part, as described with reference to FIGS. 2G and 2H, the trench 13 having the seed layer 15 formed on the inner wall of the trench 13 by sputtering and the seed layer 15 formed thereon is formed. It can be obtained by embedding a conductive material such as a nickel alloy therein to form the probes 13 and 16. In addition, the size of the tip obtained from the probe can be expected to be about 60㎛.

Meanwhile, in one embodiment of the present invention, the vertical probe 60 manufactured without performing the optional step (see FIG. 2C) may have bumps formed on the probe substrate 20 as shown in FIG. 7. 21 and the body portion 61 bonded to the bump 21 and four tip portions 62 integrally protruding from the lower end circumferential surface of the body portion 61, wherein the lower portion of the tip portion 62 is formed. Is at right angles. The space between the tip portion 62 forms a cutout portion 63. FIG. 8 illustrates a state in which the vertical probe 60 of FIG. 7 is in contact with the ball pad electrode pad 41. Since the vertical probe 60 deforms as the tip part 62 slides while depressing the electrode pad 41, the contact area thereof is widened, and the end of the tip part 62 slides on the electrode pad 41. Since the electrical contact is made through the oxide film on the surface of the electrode pad 41, damage of the electrode pad 41 is prevented and the connection with the electrode pad 41 is improved. Then, when the contact is released, the tip portion 62 returns to its original state.

Meanwhile, in one embodiment of the present invention, a hollow probe may be manufactured by performing the steps of FIG. 2F1 instead of the steps of FIG. 2F. That is, after the trench 13 corresponding to the probe tip is formed in the step of FIG. 2E, the second passivation layer pattern 14 ′ having the pattern P2 ′ has a hollow probe body shape on the sacrificial substrate 10. ). Then, by performing anisotropic dry etching using the second passivation layer pattern 14 ′, a depth of the trench 13 is increased and a space corresponding to the hollow probe body is formed at the top thereof. Thereafter, the hollow probe is completed by performing the steps of FIGS. 2G to 2I as in the case of the embodiment. As shown in FIG. 9, the hollow probe 70 has a body portion 71 having a cylindrical shape and a space portion therein.

Another embodiment of the vertical probe manufacturing method according to the present invention, as shown in Figures 3a to 3f. Referring to FIG. 3A, first, as shown in FIG. 3A, a first passivation layer pattern 51 defining a bump shape of a cylinder may be formed by limiting opening of the connection terminal 50a of the ceramic substrate 50 having an internal circuit. . In this case, the first passivation layer pattern 51 may be formed by coating a predetermined amount of photoresist on the substrate 50 and then exposing and developing the photoresist.

Next, as shown in FIG. 3B, after the conductive material is embedded in the open portion of the first passivation layer pattern 51, the upper surface of the substrate 50 is planarized to form bumps 51a. Here, the conductive material may be made of nickel (Ni) or a nickel alloy material, nickel-cobalt (Ni-Co), and the like, and the conductive material may be deposited by plating. In addition, the planarization process may use grinding and chemical mechanical polishing (CMP).

Then, as shown in FIG. 3C, the second passivation layer pattern 54 may be configured to open the bump 51a to the upper surface of the first passivation layer pattern 51 and to define a cylindrical body portion 54a. To form. In this case, the second passivation layer pattern 54 may be formed by coating a predetermined amount of photoresist and then exposing and developing the photoresist. Then, the conductive material is embedded in the open portion of the second passivation layer pattern 54 and the upper surface is planarized to form the body portion 1 (54a). Here, the planarization process may use grinding and CMP. On the other hand, from the above process, the body portion 1 (54a) is formed to extend on the bump (51a).

In this manner, as shown in FIG. 3D, the third passivation layer pattern 55 having the same shape as that of the second passivation pattern 54 is formed on the upper surface of the second passivation layer pattern 54. After filling the conductive material in the open portion of the third passivation layer pattern 55, the upper surface is planarized to form the body part 2 (55a). Here, the body portion 2 (55a) is formed to extend on the body portion 1 (54a).

Next, as shown in FIG. 3E, a fourth passivation layer pattern 56 having a pattern P4 having a cross section of the probe tip is formed on the upper surface of the third passivation layer pattern 55, and the fourth passivation layer pattern 56 may be formed. After filling the conductive material in the open portion, the top surface is planarized to form the tip portion 56a. Here, too, the tip portion 56a is formed to extend over the body portion 2 55a.

Finally, as illustrated in FIG. 3F, the first, second, third, and fourth protective film patterns 51, 54, 55, and 56 are removed by wet etching using acetone or the like to complete the manufacture of the vertical probe. .

As illustrated in FIG. 7, the vertical probe 60 manufactured as described above includes the bump 21 formed on the probe substrate 20, the body 61 bonded to the bump 21, and the It consists of four tip parts 62 protruding integrally on the circumferential surface of the lower end of the body portion 61, the lower end of the tip portion 62 forms a right angle. In addition, the space between the tip portion 62 forms a cutout portion 63.

FIG. 8 shows a state in which the vertical probe 60 is in contact with the ball type electrode pad 41. The function and action of the vertical probe 60 are as described above, and thus will be omitted here.

Meanwhile, in another embodiment of the present invention, the pattern sizes of the first to fourth photoresist patterns 51, 54, 55, and 56 may be formed to be gradually reduced, and such a concept is illustrated in FIG. 3E1. As shown. FIG. 3F1 illustrates a state in which the manufacture of the vertical probe is completed by removing the first to fourth photoresist patterns 51, 54, 55, and 56 by etching in FIG. 3E1. In another embodiment, the formation of a highly accurate photoresist pattern is required to smooth the joint portion to form the cylindrical body portion. However, the stepped vertical probe can reduce the precision in the manufacturing process. The advantage is that one can be made.

Another embodiment of the vertical probe manufacturing method according to the present invention is completed by first performing the process corresponding to Figs. 2a and 2b of the embodiment, and then performing the process of Figs. 4a to 4f.

In other words, as shown in FIG. 4A, after the processes corresponding to FIGS. 2A and 2B are performed (see FIG. 2B), the protective film 11 is wetted using the photoresist pattern 12 ′. Or by dry etching to form a first passivation pattern (11 ′ in FIG. 4A) defining a region in which a trench is to be formed in a subsequent process, and then wet etching the photoresist pattern 12 ′ using a chemical such as acetone. Remove by As shown in FIG. 4A, an anisotropic dry etching process is performed using SF 6, C 4 F 8, and O 2 gas through the first passivation layer pattern 11 ′ to form a trench 13 corresponding to the probe tip. Here, the dry etching process is performed by a known reactive ion etching (RIE) called a Bosch process as one of deep trench etching methods. Then, the first passivation layer pattern 11 ′ is removed by wet etching.

Next, as shown in FIG. 4B, the tip portion 13a is formed by embedding a conductive material such as a nickel alloy in the trench 13. In this case, the conductive material in the trench 13 is formed on the sacrificial substrate 10 by a method such as CVD, PVD, plating, etc. to a predetermined thickness, and then the upper surface of the sacrificial substrate 10 is CMP (Chemical Mechanical Polishing). ), And is buried by planarization such as etchback and grinding.

Next, as shown in FIG. 4C, a second passivation layer pattern for limiting opening of the tip portion 13a and the cylindrical body portion 1 17a on the sacrificial substrate 10 on which the tip portion 13a is formed is opened. (17) is formed. The second passivation layer pattern 17 may be formed by coating a predetermined amount of photoresist on the sacrificial substrate 10 and then exposing and developing the photoresist. Subsequently, a conductive material is embedded in the second passivation layer pattern 17 to form the body part 1 (17a).

Next, as shown in FIG. 4D, the body part 1 (18a) and the body part 2 (18a) extending on the sacrificial substrate 10 having the body part 1 (17a) formed in the same manner as described above are limited to open. The third protective film pattern 18 is formed. In addition, a conductive material is embedded in the third passivation layer pattern 18 to form the body part 2 18a.

In the above, the tip portion 13a, the body portion 1 (17a) and the body portion 2 (18a) are all made of the same metal material to form a probe integrally.

Next, as shown in FIG. 4E, after exposing the body 16 of the probe to the outside by removing the second and third passivation patterns 17 and 18, the bump 21 of the probe substrate 20 is exposed. ) And an upper end of the body 16.

Finally, as shown in FIG. 4F, the preparation of the vertical probe is completed by removing the sacrificial substrate 10 by wet etching using chemicals.

The vertical probes manufactured in the above manner are as shown in FIGS. 7 and 8, and the functions and operations of the vertical probes are the same as described above.

Meanwhile, in another embodiment of the present invention, a stepped vertical probe may be manufactured as in the other embodiment of the present invention. That is, the pattern sizes of the second and third passivation layer patterns 17 and 18 of FIG. 4D may be formed to be reduced in stages, and the concept is applied as shown in FIG. 4D1. 4F1 illustrates the bump 21 of the probe substrate 20 after the second and third passivation layer patterns 17 and 18 are removed by etching to expose the probe body 16 ′ to the outside. By bonding the upper end of the body portion 16 'and removing the sacrificial substrate 10 by wet etching using chemicals, the stepped vertical probe is manufactured. According to such a stepped vertical probe, the manufacturing process can be lowered and manufacturing is easy.

As described above, according to the method of manufacturing a vertical probe according to the present invention, a vertical probe manufacturing method of a MEMS technique for forming a trench on a sacrificial substrate and a vertical probe manufacturing using a direct flotation method on a circuit board By manufacturing a vertical probe using the method, there is an effect that the vertical probe can be manufactured in a more improved manner than the conventional method.

In addition, according to the vertical probe manufactured using the manufacturing method according to the present invention, there is an effect that it is easy to cope with the fine pitch of the highly integrated semiconductor device. In addition, the improved tip shape of the probe has an effect of increasing contact performance with contact terminals of the semiconductor device.

Claims (16)

In the method for manufacturing a vertical probe having a plurality of tips spaced at regular intervals below the body portion using a sacrificial substrate, A first step of forming a first passivation layer pattern having a pattern of a cross section of the tip portion on a sacrificial substrate; Forming a trench having a predetermined depth by performing an etching process using the first passivation layer pattern; Removing the first passivation layer pattern, forming a second passivation layer pattern having a pattern of a cross section of the body portion of the unit probe on the sacrificial substrate, and performing an etching process to increase the depth of the trench; A fourth step of forming a probe by filling a conductive material in the trench, and then removing the second protective layer pattern; Bonding the upper end of the probe to the bump formed on the circuit board, and removing the sacrificial substrate; and a fifth method of manufacturing the vertical probe. The method of claim 1, Interposing between the first and second steps, forming a conical to pyramid-shaped trench by performing an etching process using the first passivation layer pattern as a mask; Type probe manufacturing method. The method according to claim 1 or 2, Interposed between the third step and the fourth step, forming a seed layer on the inner wall of the trench by sputtering; further comprising a vertical probe manufacturing method. The method of claim 1, wherein the plurality of tip parts, The vertical probe manufacturing method characterized in that it has a shape arranged at regular intervals in the circumferential direction. The method of claim 1, wherein the body portion of the probe, Vertical probe manufacturing method characterized in that the cylindrical shape. The method of claim 1, The body portion of the probe is cylindrical, hollow, The second protective film pattern is a vertical probe manufacturing method characterized in that it has a pattern of the cross section of the hollow cylindrical body portion. delete delete delete delete delete In the method for manufacturing a vertical probe having a plurality of tips spaced at regular intervals below the body portion using a sacrificial substrate, A first step of forming a first passivation layer pattern having a pattern of the tip portion on a sacrificial substrate; Forming a trench having a predetermined depth by performing an etching process using the first passivation layer pattern; A third step of removing the first passivation layer pattern and forming a tip part by filling a conductive material in the trench; Forming a second protective film pattern having a pattern on the top surface of the sacrificial substrate, and forming a body part integrally formed with the tip part by embedding a conductive material in the second protective film pattern; And removing the second protective layer pattern, bonding an upper end of the body portion to a bump formed on a circuit board, and removing the sacrificial substrate. The method of claim 12, wherein the fourth step, Method of manufacturing a vertical probe characterized in that the body portion is formed in a multi-stage manner by being carried out two or more times. The method of claim 13, A method of manufacturing a vertical probe, characterized in that a vertical probe is formed stepwise by overlapping a pattern of a body part gradually increasing between second protective film patterns overlappingly formed by performing two or more times of the fourth step. The method of claim 12 or 13, wherein the plurality of tips per unit probe, Vertical probe manufacturing method characterized in that it has a shape that is arranged at regular intervals in the circumferential direction. The method of claim 12 or 13, wherein the body portion of the probe, Vertical probe manufacturing method characterized in that the cylindrical shape.

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