TW200419159A - Probe for testing flat panel display and manufacturing method thereof - Google Patents

Abstract

The present invention relates to a probe for testing a flat panel display device, in which a plurality of conductors having a parallel arrangement are stacked between a plurality of other conductors, a probe assembly having the probe, and a method of manufacturing the probe and the probe assembly. The present invention provides a probe for testing a flat panel display device comprising: a plate-like dielectric; a plurality of conductors being provided in parallel; and first trenches being provided on at least one plane of upper and lower planes of the dielectric to fix the plurality of conductors in the dielectric in a predetermined arrangement.

Description

2. Description of the invention: [Technical field to which the invention belongs] The present invention relates to a manufacturing method for testing a flat panel display. More specifically, the wooden needle and its mouthpiece The present invention relates to a probe for measuring renewal; the probe of which is not flat, in which the flat panel is placed on a plurality of conductor stacks and other conductors -The probe must be a wooden needle in the wire, and the present invention relates to the method of using the outer 2 needles and the probe set. In particular, this probe is related to the present invention. The invention is related to the use, J: from Lu ^] During the production process of the probe of the flat panel display, it is not necessary to adhere the probe conductor in a MEMS unit. The manufacturing process uses a spliced conductor to precisely align the conductors, which is related to the method of manufacturing the probe. In addition, the present invention relates to a probe for testing a flat panel display. A MEMS process on a single-sacrificial substrate is used in the basin to form a probe conductor on two planes of the material-sacrificial substrate. The present invention is also related to manufacturing the probe. Needle-related. [Prior art] In summary, a TFT-LCD (thin film crystalline liquid crystal display) device is a flat panel display 'which includes a lower panel with a predetermined size, which has a plurality of thin film U bodies (TFT) and pixel electrodes' -A color filter with a predetermined distance from the lower plate for coloring; a lower plate with a predetermined distance from the lower plate and sequentially having a common electrode, and a liquid crystal interposed between the upper and lower plates. The TFT-LCD device includes a plurality of TFTs, which are switching members, capacitor regions and auxiliary capacitor regions generated by liquid crystal between upper and lower plates; gate drive electrodes for driving ON / OFF of the TFTs; and for applying external images Signal O: \ 89 \ 89662.DOC -6- 200419159 Image signal electrode for display .. ^ ^ Such as image (including moving image). After the ^ 4 fabrication is completed, the flat panel display such as TFT-LCDI ^ ¥ is connected to the electrode pad of the flat panel display via the probe set. 2. Make sure that the flat-panel display is normal, and ^ υ / process to divide the bad flat-panel display with ^ η # 1. Jubei 4 uses a pendulum with a probe set of various types, and the funeral is known. Lai has developed various needle instrument thefts. Probe instruments include needle probe instruments. , Open J wooden needle meter ... and other (micro-motor system) probes are integrated and extremely sharp. Need to develop with excellent re-productivity and high productivity, and the fine pitch of the thousand-panel display (piteh) t Find the probe set. [Summary of the invention] The design of the present invention is to meet the requirements of the previous stage of development, which is to provide an external system < ^ ^ purpose, 8 processes, and thus reduce the process time to test the flat panel display H probe 'and manufacture the Probe method. Another object of the present invention is to provide a process that can eliminate the use of a bonding machine to bond the probe conductor in the / EMS unit during the production process, and thus obtain a light ,,, ^, + ¥ body that is extremely accurately aligned. Test a probe for a flat panel display, and a method for manufacturing the probe. One of the purposes of this volume is to provide a

Method 1, and a garment & method thereof, by using a MEMS garment for a single sacrificial substrate, the probe can pin conductors on two panels on a sacrificial substrate.

O: \ 89 \ 89662.DOC 200419159 Extension: To achieve the stated purpose, one aspect of the present invention provides a probe for testing planar and non-stateful probes. The display includes a plate-like dielectric parallel conductor. , And in the plane above and below the dielectric: two: the first-ditch of several soils; the complexes are fixed in a predetermined configuration; two: the electric medium. ¥ body in the introduction of this book is different-the form provides a test pin, the display field includes a plurality of unit contact components which are located and fixed below the film at a pre-empty interval, which is unfavorable. Wherein, a detection tip of the thin film device is composed of a nine-beam ancient member, and a pair thereof is located in a positive manner on one of the beam members, which is another energy sample of the present invention. Needle, the display is crying ^ to test the flat panel display #lJ Dagger sacrifice substrate; the use of a lithography process Ut. Process formed the first-Zhungou. Chatian ^ ... clothing and an etching room is located A first dielectric formed on the first trenches and other conductors on the sacrificial substrate; and a micro-fish one on the second quasi-deaf I Λ heart gas button formed on the process and an etched lower plane; a # ^ ^ ^ The fault of the sacrifice substrate is a second dielectric formed by embedding a dielectric material. / Xundi-Zhugou Ling and another aspect of the present invention provides a probe, which includes a plate-like medium. The groove formed by the sacrificial substrate is made of -micro, made η and obtained a number of conductors. Wind ~ Splinter King and Yifan are engraved in the trenches, where the ^ / medium-one conductive material is embedded in the upper and lower predetermined conductors of the dielectric and cut in the lower plane / Its Γ is formed / formed on the upper plane to be parallel to the 5Hai Temple.

O: \ 89 \ 89662.DOC 200419159 "Another aspect of the present invention provides a probe formed using a single sacrificial substrate, including: a type of plate-shaped first dielectric; a stacked second dielectric, A step difference is formed on the -dielectric material; a plurality of conductors arranged at a predetermined interval to penetrate the first and second dielectric materials; and The conductive layer of a conductive material on one of the planes of each of these conductors. Another aspect of the present invention provides-a kind of use-a single-sacrificial substrate formed by 1 wooden pin 'includes:-by stacking-ceramic plates in-ring Dielectrics formed on and above the oxide; a plurality of conductors formed on the upper and lower planes of the dielectric at a predetermined interval; Conductive layers on the planes of these conductors; and supporting components stacked on the upper and lower planes of the temple in the dielectric shell to fix the positions of these conductors. This & Mingzhi-Provided in other ways-use —Single—The second pick pin formed by the sacrificial substrate includes: a type of plate-like dielectric; The conductors are shaped on the upper and lower planes of the dielectric at a predetermined interval;-by a predetermined rain record t method, on the conductors of each material-the material on the plane ^ and stacking two mouths & quot The pen-like order on the upper plate t ^, the supporting components on the thousand surfaces to fix the position of these conductors. Another problem of this month is to provide a method of making a probe for the indicator, Including the "planar board"-a step above a dielectric and forming a first on at least one plane below the dielectric ★ Dimugou's Diyigou formation step, borrowing branch components to the dielectric Mass, · ,, and 疋 are configured to fix a plurality of conductors on the dielectric; and a support group on a plane above or below the stack

O: \ 89 \ 89662.DOC 200419159 piece forming step to fix the conductors in the trenches on the dielectric. '-Another aspect of the invention provides a method for manufacturing a probe for testing a flat panel display device, including:-a conductor forming step, which uses-a lithography process and a conductive film formation process in one A single sacrificial base of a predetermined thickness? A photoresist pattern is formed on at least one of an upper plane and a lower plane to form a conductor; a dielectric formation step is to form a photoresist pattern by using a lithography, and to open a central portion of each of these conductors, Dielectrics are formed on the open central part of each of these conductors;-Trench formation steps: It uses the -lithography and -_ process to form a trench, which exposes the lower plane of each of these conductors; The formation of the support assembly by the bereavement-support assembly in these trenches-the support assembly formation step of the branch assembly; and-the completion step of removing the sacrificial substrate. Another aspect is to provide a method for manufacturing a probe for testing a flat panel display, including: using a lithography process and the first and second # engraving processes to form a bottom with a history-rounding process The first-ditch-ditch formation step; a conductor formation step, which uses one or two passes to open the central portion of the first canals, and then embeds a conductive material in the two opening regions to form a conductor -Using a lithography process and-a dielectric film forming process to form a dielectric forming step on top of each of these conductors; and a finishing process of removing the sacrificial substrate. The other one of this U provides _ a kind of manufacturing_ for testing-plane :: exploration: a method of film, including steps: forming on a sacrificial substrate: Di Bao 4¾ pattern, thereby defining the formation of a plurality of unit contact components tip

O: \ 89 \ 89662.DOC 200419159; use the first protective film pattern as a cover to form a trench on the sacrificial substrate by the Shi Bu engraving process; move f: at the Lai Di-protective film The shape of the second substrate = 4 skin pattern on the sacrificial substrate defines the area where the tip of the plurality of unit contact components is formed; the unit contact is formed by forming a metal film on the sacrificial substrate where the second protective film pattern is formed. The beam member of the module; opening the beam member of the unit contacting the module by removing the second protection pattern; opening the unit contacting the beam member of the module with a predetermined size = the substrate substrate; Place the sacrificial sacrifice of the film with the size of the job, and attach the beam members that are in contact with the unit to fix the unit on the lower part of the film; ^ 盘山 # 人, and hunting by private Connecting and fixing the sacrificial substrate at the film to open the sharpened parts of the unit contact assembly: The other way is to provide a method of manufacturing and using: the second method of wiping the needle, including ... Yi Yun Engraving Process on the Single Sacrifice The first channel-ditch formation step above and below the board forms the channel-ditch formation step where the single-sacrificial substrate has a predetermined thickness, and the conductor is formed by conducting materials in the first-ditch groove to form a conductor. Steps:-Utilize-lithography and process on the lower part of these conductors: trench ::: trench formation step;-forming a dielectric dielectric by embedding-conducting material in these brothers-Zhu Gully Forming step 1-at least one of the upper and lower planes of the sacrificial substrate at the dielectric = forming-selective-component-selective-component-forming step; and-finalizing step of removing the plate. Building a Mad Lane Another aspect of the present invention provides a method for manufacturing a single sacrificial substrate.

O: \ 89 \ 89662.DOC 200419159 ▲ The method of Zhu needle includes: forming a first protective film-forming step on the single sacrificial substrate, wherein the single-sacrificial substrate has a thickness of: 'Where the first protective film pattern is used to form a conductor; a conductive material is formed on the first protective film pattern to form an upper conductor ... # forming step, a sacrificial substrate where the conductors are formed Forming the first protective film forming step of the fourth protective film, using the second protective film to form 4 pieces; and forming an upper supporting component on the second protective film pattern to support and form Step; a dielectric forming step of forming a dielectric by embedding a dielectric material in the trenches; and a step of removing the sacrificial substrate. ^ Another invention-provide-manufacturing-use_single_sacrifice substrate & = n includes: -on-the single-sacrificial substrate predetermined portion ^ forming a first trench formation step Wherein, the single sacrificial substrate is made of a predetermined material and undergoes a polishing process to have a predetermined thickness, wherein a dielectric is formed by using the trenches; one is embedded by a dielectric; it is expected that the first Dielectric formation of the dielectric in the trench: 'Conductor formation step, which forms a conductor by forming a protective film pattern t above and below the sacrificial substrate where the dielectric is formed , Then embedding-conducting material in the protective film pattern; and a finishing step of removing the sacrificial substrate. According to another aspect of the present invention, a method for manufacturing-using-single-sacrifice substrate is provided. The method includes: forming a trench with a predetermined depth on a predetermined area of an upper plane of a single sacrificial substrate. A trench forming step; a first forming a first protective film pattern on the sacrificial substrate where the trench is formed

O: \ 89 \ 89662.DOC -12- 200419159 The protective film formation step is used to open the channels, chips, and mountains. The second protective film pattern is turned on. Remove the trenches: a lithography process is formed on the sacrificial substrate and on the lower plane-the second protection step: a second protection film pattern forming step, and the second protection layer is used to form a conductor in #; -At a specific position defined by the second protective film pattern: a step of forming a conductor into a conductor; one where the conductors are formed: a protective film with a third protective film pattern formed on the upper and lower planes of the substrate A pattern forming step in which the third retaining and supporting component is used;-at a specific position defined by the third protective film pattern :: shape: a supporting component forming step; and a removed portion is the trench The sacrificial substrate separated by the buried material is then buried in the trench. 70 [Embodiment] In the present invention means "probing in the description of the present invention, note that the probe, the pin structure π. Baixian, in detail the probe used to test the flat panel display according to the present invention Before the specific embodiment, the conceptual structure of the probe will be described first. As shown in FIGS. 1a to 1c and FIGS. 2a to 2c, the plate-like dielectric 10 is made of a dielectric material such as ceramic. 10 thickness 240 microns is preferred. In addition, the dielectric shell 10 has a stepped shape or a slanted shape. Furthermore, because the dielectric 10 has the function of maintaining the shape and insulation of the probe, the dielectric The electric substance is preferably made of a hard material. The conductor 2 (^ and 201) has a rod-like shape made of nickel (Ni) or a nickel alloy.

0: \ 89 \ 89662.D〇C -13- 200419159 The tip has a sharp shape. There are different methods of manufacturing a conductor according to this embodiment. In the first specific example, the trenches at the conductor insertion points are formed using a tangent spur toothing process to form and attach the conductors with sharp ends to the trenches, so that the conductors are located in the dielectric 10 on. In the first specific embodiment, the position and size of the conductor are determined by the lithography process, and are located on at least one plane above and below the dielectric at predetermined intervals. The conductors 20a and 20b are in contact with the upper and lower planes of the dielectric 10, respectively. Although two rows of conductive systems are formed on the dielectric substrate above and below, respectively, a row of conductors may be located within the dielectric 10. In addition, a single-layer probe is formed when a row of conductors are located within the dielectric, as shown in Figures 2a to 2c. Since the probe is viewed from the top of the probe, the conductors 20a and 20b are placed so that the conductor 20a on the plane above the dielectric 10 is located adjacent to the conductor 20b on the plane below the dielectric 10. between. In addition, the length of each conductor 20a on the plane above the dielectric 10 is the same as that of each bird on the plane below the dielectric 10, and the conductors 20a and 20b protruding outward from the dielectric ridge protrude to the left and right. The lengths of the parts are the same. As shown in FIG. 1c, the terminal portion of the conductor on the plane above the dielectric 10 is more prominent than the terminal portion of the conductor bird on the plane below the dielectric 10. In particular, the formation of the conductor loop and the bird made the line u connecting the end portion of the conductor 20a on the plane above the dielectric 10 and the end portion of the conductor 20b on the thousandth plane below the dielectric layer relative to each conductor. Surface with 30. To 60. The included angle is better. The thickness of the conductors 20a and 20b used is 60 ± 5 microns.

O: \ 89 \ 89662.DOC -14- 200419159 As will be described later, the main specific implementation of the method for manufacturing a probe for testing a flat panel display having conductors 20a and 20b on a dielectric 10 There are two examples. The first embodiment is a method for manufacturing a probe using a tangential sawtooth process, and the second embodiment is a method for manufacturing a probe using a MEMS process. In the case of the MEMS process, the thin conductor materials 40a and 40b with good V-body ratio and good body can be formed on the surfaces of the conductors 20a and 2 cents. The conductive material is preferably formed by a gold plating layer. The conductive materials 40a and 40b are formed to improve the conductivity of each conductor. ^ In addition, it also has support members 30a and 30b formed of epoxide, ceramic plate, or a combination of epoxide and ceramic plate. The supporting components are connected to the upper portions of the conductors 20a and 20b, and the reinforced conductors 20a and 20b are selected. Furthermore, the present invention also discloses single-layer probes and double-layer probes. As shown in Figure h and above, a single-layer probe includes a plate-shaped dielectric rib having a predetermined size or the like; a plurality of conductors 50 which penetrate the dielectric in parallel at a specific interval; and the upper and lower planes of the dielectric rib One of the plate-like supporting components 60 is connected. In the case of the MEMS process, a conductive material with excellent conductivity can be formed on a plane of each conductor 50 in a single-layer probe. The conductive material is gold, so that the gold-plated layer 70 is preferably formed. The components of the single-layer probe and the double-layer probe are the same, and the functions of the components are the same. (First specific embodiment) According to the first specific embodiment, trenches (slots) are formed on a rectangular reinforced plate made of a hard material using a tangent sawtooth process, and a conductor is inserted into the trenches. The probe manufactured to test the flat panel display is refined so that the O: \ 89 \ 89662.DOC -15- 200419159 conductor is used to test the pin of the flat panel display. A first specific embodiment will now be described with reference to FIGS. 3 to 5. 3a to 3e are perspective views illustrating a probe for testing a flat panel display according to the first embodiment of the present invention, and a flowchart for explaining a method of manufacturing the probe. In the probe for testing a flat panel display and its manufacturing method according to the present invention, the support plate 9 () prepared by Zhongru® | 3a 7F 'is a rectangular plate. The support plate is made of a hard material such as pottery. Since the central groove 93 is formed in the longitudinal direction from the side of the plane of the supporting floor to its opposite side, a first projecting area ㈣ a second projecting area 95 opposite to each other is formed on the plane above the supporting plate 90. ρχ, ▼ ^ ㈣a⑽⑽% 状。 Following tf shown in Figure 3b, a plurality of needle-like shapes are formed on the upper surface of the support plate = one and the second protruding areas 91 and 95 using the tangent tooth process. The plurality of trenches 97a and 97b are connected to the central groove 93. In addition, the trenches formed on the first toilet— $ + p Q1 are called toilets… ”Brother-Da out £ 91 and 95 9: _ 均There are communication intervals, so that they are opposite to each other, as shown in the figure. == The trench can be formed on the __th protruding area 91. The trench 97 & 97a disk 97b deep sound while a earth canal and central groove 93 water ... §, it is better to form the ice '俾 to see the flatness of the central groove 93 flat sky conductor. Thousand degrees of heart in the trench

O: \ 89 \ 89662.DOC -16- 200419159 and then as shown in FIG. 3d, the conductors 98 having a predetermined length and a predetermined diameter have sharpened ends and are located in the first protruding areas 91 and 91 of the support plate 90, respectively. In the trenches 97a and 97b formed in the second protruding region 95. . The body 98 has a predetermined length protruding outward from the support plate 90, so that one end portion of each conductor can be used as a contact component to directly connect with the test portion of the flat panel display, and the other end portion can be used as a connection component. . The conductor 98 is made of tungsten or a tungsten alloy. As shown in FIG. 3e, a pin or a conductor (pin) 98 is inserted above the support plate 90, and an adhesive is applied to the middle of the trenches 97a and 97b formed on the first and second protruding areas 91 and 95, and then the adhesive is applied. Agents such as epoxide and cured to attach to conductors on the supporting floor, thereby making the probe. A specific embodiment of the method of manufacturing the probe described with reference to FIG. 3 will now be described with reference to FIGS. 4 and 5. Fig. 4a and the fairy are perspective views illustrating a probe for testing a flat panel display and a manufacturing method thereof according to another embodiment of the present invention. In a probe for testing a flat panel display and a manufacturing method thereof according to a specific embodiment of the present invention, as shown in FIG. 4a, another support plate 100 forming a secondary probe above is in the first specific embodiment. Above the support plate 90. Here, the manufacturing method of the supporting plate 100 and the supporting floor plate 90 is the same. The probe located at the upper part is called the upper probe, which is the same as the method for manufacturing the probe called the lower probe in the first embodiment. That is, the trench 107a formed on the first protruding region 101 is connected to the central groove 103, and the conductor 108 located in the trench 107a is attached and fixed with an adhesive such as epoxy 1009. In addition, another trench is formed on the second protruding area 105, but O: \ 89 \ 89662.DOC -17- 200419159 is not shown in the figure. Then, as shown in FIG. 4b, using an adhesive such as Epoxide (the probes are not shown in the figure, they overlap each other. Α is the conductor ⑽ of the upper probe (sometimes sometimes referred to as the upper conductor and the lower conductor 98 (and sometimes the lower conductor)) Alternately arranged. One end of the conductor 108 of each upper probe protrudes more outward than the end of the corresponding conductor ⑽. The total length of the outward protrusions of the upper and lower conductors is the same, so that the upper and lower conductors have the same physical conditions. One of the ends of the conductors 108 and 98 is used as a contact component directly connected to the test place of the flat panel display, and the other end is used as a connection component. °, Although described in the specific embodiment is a double layer Probes, it should be known that three or more layers of probes can be manufactured according to the manufacturer's intention. In addition, the attachment of the upper and lower probes can also be determined according to the manufacturer's intention. Therefore, the support of the probe can be directly attached and fixed. The plate 100 is on the support plate 90 of the lower probe. Figure 5a illustrates the invention A perspective view of a probe for testing a flat panel display and a manufacturing method thereof according to another embodiment; FIG. ^ Is a sectional view of FIG. ^. In another embodiment of the present invention, it is used to test a flat panel display. In the probe and its manufacturing method, as shown in Figure 51 and 51), the following fabrication is performed on the plane below the support plate 卯. That is, similar to the first embodiment, a central groove 112 and a first protruding region are formed. Process of forming 110 and the second protruding region 114; process of forming the first trench 116a and the second trench (not shown in FIG. 5a); and forming the first trench 116a and the second trench (not shown) And central stables]

O: \ 89 \ 89662.DOC -18- 200419159 Body 118 (with a predetermined length), so that the two end portions protrude outward. Binary v is performed on the plane below the support plate using an adhesive such as epoxy. The process of attaching and fixing the lower conductor 18 to the plane below the support plate 90. The conductors 98 formed on the plane above the support plate 90 and the conductors 118 on the plane below the support plate 90 alternate vertically. One end portion of the conductor 98 on the plane above the support plate projects more outwardly than the corresponding end portion of each conductor 118 on the plane below the support plate. The total length of the outward protrusions of the upper conductor 98 and the lower conductor 118 is the same. (Second Specific Embodiment) The second specific embodiment is a method for manufacturing a probe using a MEMS process. Before describing a special example of the clothing needle method, common steps in the method of manufacturing a probe will be described. / In the sacrificial substrate preparation step, the prepared sacrificial substrate has Shi Xi (s), said Yen or made of Taumann material. The sacrificial substrate is as thorough as possible. The sacrificial substrate is preferably "= in the dielectric formation step" An etching process is used to form a trench on a predetermined area on the sacrificial substrate ... and it is formed in a quasi-orthogonal shape—T " Electro-shell insertion or production of ceramics Γ to form a dielectric on the sacrificial substrate. Dielectric The quality ... is the emulsion of the clothes, etc. In other words, it is applied in the trench, and before the epoxide is solidified, the same pre-attachment is made in the trench to form the same dielectric trench. The box system h > and the second, can be combined with each other! You Taoxian Banren 'then apply epoxide to the channel; the electric mass. U., Zhong' thus attached the trench and the Tao Jingban to form 1

O: \ 89 \ 89662.DOC -19- 200419159 Although the ceramic plate is a rectangular parallelepiped, it can also be a parallelogram or step shape, as shown in Figures 21a and 21b. The process of etching the predetermined portion of the upper and lower planes of the sacrificial substrate includes a tangent process and a dry button engraving process, in which a protective film pattern formed using photoresist is etched = a substrate. In the case where ceramics is used as the sacrificial substrate here, since the sacrificial substrate itself is a dielectric, the process of forming a dielectric on the upper portion of the sacrificial substrate can be omitted. Next, in the conductor forming step, the same pattern as the shape of the conductor is formed on the upper and lower planes of the sacrificial substrate, and then these patterns are accurately used to form the conductor everywhere. The guide system is preferably made of nickel (Ni) or a nickel alloy. First, a photoresist is used to form a pattern having the same shape as the conductor at a precise position on the sacrificial substrate (where the conductor is formed). Then draw some pictures and use the electrolytic clock method to turn them into conductors. As a result, the probe according to the present invention has excellent accuracy and reproducibility in the arrangement, position, and spacing of the conductors on the dielectric substrate above and below the plane. Therefore, it is compared with the case where the bonding process is performed by human health ^ This reduces the failure rate. Since the guide system is formed by an electric ore process, a seed layer needs to be formed on the surface of the sacrificial substrate before the electric ore process to facilitate the electroplating process. Here, the seed layer can be formed by a sputtering method. In addition, the seed layer is preferably made of titanium hafnium and copper (cu) ^. The titanium layer has the function of improving the adhesion between the sacrificial substrate and the copper layer, and the copper layer can be used as a plating seed layer in the subsequent plating process. In addition, the guide system is made of nickel (Ni) or a nickel alloy. At the support assembly forming step, attach and mold the support assembly to the sacrificial

O: \ 89 \ 89662.DOC -20- Where a conductor is to be formed on the substrate. The support component is made up. Special + evening + „Clothing oxide or ceramic temples are huge. Before each oxide is cured, epoxy is pre-applied to attach a ceramic plate to obtain a better support component. In other words, a photoresist is used to form a support component. # Η ^ φ ^ ^ Chaya connected to the supporting component: the supporting material was added in the case to form the supporting component., ΓΓ 'ί In the end step, use a difficult process to remove the remaining part of the sacrificial substrate to obtain Probe. = On the one hand, the method of manufacturing a probe 'in the case of using a hard material such as ceramic t as a sacrificial substrate ^ includes a groove forming step, which is formed on the upper and lower planes of a single sacrificial substrate made of dielectric shell material. The predetermined portion is formed with a groove having a predetermined degree, and the predetermined thickness is formed by a polishing process; the dielectric material is formed to supplement the guard formation step by forming a protective film pattern for opening the groove on the sacrificial substrate ^ and The metal material is embedded in the trench to form a dielectric shell. The metal material in the supplementary tool is a material that can be selectively removed by a wet etching process. The conductor forming step is performed on a sacrificial substrate to form a substrate. The protective film of the external type is then formed to form a conductor at a precise position; the step of forming a branch component is to form a branch component on the sacrificial substrate above and below the surface where the conductor is to be formed; and The step of removing the quality forming supplementary tool from the sacrificial substrate. The hard materials here include ceramics, glass, etc. The structure of the probe used to test the flat panel display and its manufacturing method will be described in the following drawings. (Specific embodiments 2-1) Figures 6a to 6p illustrate a test method for manufacturing a flat panel according to another embodiment.

O: \ 89 \ 89662.DOC -21- 200419159 Sectional view of the method for the probe of the display. In the method for manufacturing a probe in the specific embodiment described with reference to Figs. 6a to 6p, the conductor and the alignment key are located on the plane above the sacrificial substrate, so as to facilitate the process on the lower plane using the alignment key. As shown in FIG. 6a, a seed layer 126 is formed on a sacrificial substrate 12 made of silicon or the like by a deposition process such as a sputtering process, and then the seed layer 126 is used as a protective film with a predetermined thickness. First photoresist 28. The seed layer 126 is constructed to have a titanium layer 122 having a thickness of 500 angstroms and a copper layer 124 having a thickness of 5,000 angstroms. The copper layer 124 is substantially used as a seed layer 126 in a subsequent electroplating process. The titanium layer 122 is used to improve the adhesion between the sacrificial substrate 120 and the copper layer 124. < As shown in FIG. 6b, a first photoresist pattern 129 is formed to define a predetermined area for forming a conductor, and an alignment key in a subsequent process. Each conductor is a contact component that is in direct contact with the flat panel display being tested. A first photoresist pattern 129 can be formed by exposing a first photoresist 128 formed on a sacrificial substrate by using a cover having a predetermined circuit pattern formed thereon, and forming a conductor and an alignment key, and then developing it. Then, as shown in FIG. 6c, a conductive material such as a recording material or a nickel alloy (Nmw-Co) is deposited on the sacrificial substrate 12 with a first photoresist pattern 129 on the sacrificial substrate 12 to form a conductive film 131 as shown in FIG. 6c. Then, a planarization process is used to planarize the plane above the sacrificial substrate 120. The copper layer 124 in the seed layer 126 is used as a source of the electroplating material during the electrical "process" of the conductive film 131 by the planarization process using a chemical mechanical polishing (CMP) method and a polishing method.

O: \ 89 \ 89662.DOC -22- 200419159 In particular, in the course of the ideal plating process for forming the conductive film 131, only when the conductive film 131 is formed in the opening portion of the first photoresist pattern 129, The planarization process can be omitted. In addition, in a case where the conductive film i 3 丨 is formed using a method other than a power ore process such as physical vapor deposition (pvd) and chemical vapor deposition (CVD), the previous process of forming the seed layer 126 can be omitted. Next, as shown in FIG. 6d, a portion of the copper layer 124 is exposed by removing the first photoresist pattern 129, thereby forming a conductor and alignment keys 132 & and 13 holes. The first photoresist pattern 129 can be removed by a method such as a wet money engraving process or a dry money engraving process using a chemical. Then, as shown in FIG. 6e, in the wet etching process using a chemical, the conductor 130 and the alignment key 132 are used. And 1321) as a cover, which is removed by exposing the first photoresist pattern 129 to expose the seed layer 126 composed of the titanium layer 122 and the copper layer 124, so that the conductor 130 and the alignment keys 132 & and 13213 are completely exposed. . Next, as shown in FIG. 6f, a certain amount of the second photoresist 134 is coated on the conductor 130 and the alignment keys 132 & and 1321) on the sacrificial substrate 120 to be completely exposed. Although the sacrificial substrate 120 is fixed and fixed on the rotary chuck here, the second photoresist 134 is sprayed on the sacrificial substrate 120 through a nozzle, so a certain amount of the second photoresist 134 can be applied. Next, as shown in FIG. 6g, a mask having a predetermined circuit pattern is placed on the sacrificial substrate 120 to apply a second photoresist 134, and then exposed and developed to form a fully opened conductor 130 and the alignment key 13 . And 13 ^ 的 第二 光阻 平面 136. Next, as shown in Figure 6h, the conductor is closed with a dielectric material such as an epoxide.

O: \ 89 \ 89662.DOC -23- 200419159 (supported completely with the second photoresist pattern 136) to form the support plate 138. Here, an epoxide used as the support plate 138 can be formed by printing or the like . Next, as shown in FIG. 6i, the central portion of the conductor closed by the dielectric plate such as the support plate 138 made of an epoxy material is flattened in the plane above the sacrificial substrate by a grinding process. A grinding process is performed here to facilitate subsequent grinding processes performed on the sacrificial substrate 120 back plane. Next, as shown in FIG. 6j, the sacrificial substrate 120 faces downward, and the moon plane of the sacrificial substrate 120 is polished to a predetermined thickness, so as to adjust the etching depth of the sacrificial substrate 120 to a low height in the subsequent trench formation process. Next, as shown in FIG. 6k, a third photoresist 14 of a predetermined thickness is coated on the back plane of the sacrificial substrate 120 which has been ground to a predetermined thickness. ♦ The first-photoresist 14 coating method is the same as the first and second photoresist 128 and I ". Then as shown in Η61, the mask with a specific circuit pattern above exposes the third photoresist and 40 to the next Development, thereby forming a third photoresist pattern 142 for opening the central portion of the back plane of the sacrificial substrate. ”Then, as shown in FIG. 6m, the third photoresist pattern 142 is used as a cover to perform etching. The seed layer 126 forms a trench 14 4 for opening the sacrificial substrate 120. The button engraving 1 here is a dry etching process using a mixed gas of sf6 and c4m02 with a specific ratio. More specifically, it is the so-called Bosh system.

O: \ 89 \ 89662.DOC -24- 200419159 Private / Reactive ion money engraving (RIE) originated from the deep canal engraving method. Next, as shown in FIG. 6n, a certain amount of epoxy adhesive 140 is applied to the trenches 144 formed on the back plane of the sacrificial substrate 120, and then a branch floor i48 made of a predetermined inch ceramic plate is pressurized and It is inserted into the trench ditch to thereby embed and attach the support plate 148 in the trench 144. Then, as shown in FIG. 60, the support plate 148, the dielectric plate 130, and the conductor 138 are exposed by removing the second photoresist pattern 136 and the first photoresist pattern 142 of FIG. 6n. The second photoresist pattern 136 and the third photoresist pattern 142 are removed here by a dry etching process or a wet etching process using a chemical. Finally, as shown in FIG. 6P, a wet etching process using a chemical is performed on the sacrificial substrate 120, so that the end portion of each conductor 138 is exposed. The central portion of the lower plane of each conductor 138 is insulated from the dielectric plate 130, and the central portion of the upper plane of each conductor 138 is supported by the support plate 148, thereby obtaining a probe. The alignment keys 132a and 132b and the residual seed layer 126 shown in FIG. 60 are removed here. (Embodiment 2-2) FIGS. 7a to 7i are cross-sectional views illustrating a method of manufacturing a probe for testing a flat panel display according to another embodiment. In the method for manufacturing a probe according to this embodiment, as shown in FIG. 7a, a seed layer 206 having a predetermined thickness is formed on a sacrificial substrate 200 made of silicon and other materials by using a process of I / I product such as money ore. Then, a first photoresist 208 serving as a protective film having a predetermined thickness is coated on the seed layer. The seed layer 206 is composed of a titanium layer 202 and a copper layer 204. The copper layer 204 substantially serves as a source in the subsequent electroplating process. The titanium layer 20 is used to improve the sacrificial substrate

O: \ 89 \ 89662.DOC -25-200419159 200 Adhesion to copper layer 204. As shown in FIG. 7b, a first photoresist pattern 21 is formed to define a predetermined area for forming a conductor in a subsequent process. A mask designed to form a predetermined circuit pattern of a conductor may be placed on the first photoresist 208 formed on the sacrificial substrate 200 of FIG. 1 and then exposed and developed to form the first photoresist pattern 21. . Then, as shown in FIG. 7c, a conductive material such as nickel or a nickel alloy (Ni-Co, Ni-W-Co) is deposited by an electroplating process on the sacrificial substrate 200 where the first photoresist pattern 210 is formed to form a full contact. The module uses a conductive film 212. Then, a planarization process is used to planarize the plane above the sacrificial substrate 200. The planarization process is performed by a chemical mechanical polishing (CMP) method and a polishing method. During the electroplating process of forming the conductive film 212, the copper layer 204 serves as a source of electroplating material. In particular, in the course of an ideal electroplating process for forming the conductive film 212, the planarization process can be omitted only in the case where the conductive film 212 is formed in the opening of the first photoresist pattern 21o. In addition, in the case where the conductive film 212 is formed by a method other than the electroplating process, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), the previous process of forming the seed layer 206 can be omitted. As shown in FIG. 7d, after the second photoresist pattern 21 is removed, the conductive film 212 formed in the opening portion of the second photoresist pattern 210 in FIG. 7c is used as a self-aligning mask to perform an etching process to remove A seed layer 206 composed of a titanium layer 202 and a copper layer 204 remaining on the lower portion of the second photoresist pattern 210 in FIG. 9 is formed. Here, the second photoresist pattern 21 is removed by wet or dry etching, and the seed layer 206 can also be removed by wet or dry etching. O: \ 89 \ 89662.DOC -26- 200419159 Then, as shown in Fig. 7e, the second photoresist 214 is applied to the sacrificial base. The second photoresist pattern in Fig. 7C is removed. Here, the third photoresist 214 is coated by a general photoresist spin coating method or the like. The connector is shown in FIG. 7f, and a mask with a specific circuit pattern is placed on the sacrificial base #, and the y soil cloth has a second photoresist 214, and then it is exposed and developed to form a contact component for opening. The photoresist pattern 222 of the central portion of the conductive film 212. Then, as shown in FIG. 7g, a certain amount of an adhesive 216 such as an epoxide is applied to the opening portion opened with the first photoresist pattern 222, and then a dielectric material having a predetermined size, such as a support plate 218 made of ceramics, is applied. Inserted and attached in the opening portion of the third photoresist pattern 222. Next, as shown in FIG. 7h, by removing the third photoresist pattern π of FIG.%, The conductor composed of the support plate 218 and the conductive film 212 is exposed. Finally, as shown in FIG. 7i, the supporting plate 218 and conductive film 212 in Tufan's sacrificial substrate 200 are exposed to the outside by a wet etching process or the like, and a seed layer 206 on the lower part of the conductive film 212 is completed to complete the conductive process. Membrane probe. It is preferable to sequentially remove the sacrificial substrate 200 and the seed layer 206 composed of the copper layer 202 and the titanium layer 204 by a series of wet etching processes using different chemicals. In addition, a process of attaching a dielectric material such as an epoxy on the back plane of the conductive film 212 of the completed probe is additionally performed. (Embodiment 2-3) FIGS. 8a to 8t are cross-sectional views illustrating a method of manufacturing a probe for testing a flat panel display according to another embodiment. In the probe manufacturing method according to the specific embodiment, as shown in FIG. 8a, O: \ 89 \ 89662.DOC -27- 200419159 coats the first photoresist 252 on the sacrificial substrate 252 made of silicon and other materials. Here, the first photoresist 252 is coated by a well-known photoresist spin coating method or the like. Then, as shown in FIG. 8b, a subsequent process is performed on the sacrificial substrate 250, thereby forming a first photoresist pattern 254 to define the alignment key and the shape of the contact element. Here, a first photoresist pattern 254 is formed on the sacrificial substrate 25 by aligning a predetermined mask, and then it is exposed and developed. Then, as shown in FIG. 8c, the first photoresist pattern 254 on the sacrificial substrate 25 is used as a cover, and an etching process is performed to form the first trench 25 and 25 仳 and the second trench 258 '俾 to form a sacrifice. Alignment keys and contact components in the substrate 250. This is a process of forming the first trenches 256a and 256b and the second trench 258 by a dry etching process using a reactive gas. After removing the first trench 25 formed on the sacrificial substrate 25 and the first photoresist pattern 254 at 25 讣 and the second trench 258, a seed layer 260 having a predetermined thickness is formed by a process such as a sputtering process. . The seed layer 260 is composed of a titanium layer 261 with a thickness of 500 angstroms and a copper layer 262 with a thickness of 5,000 angstroms. The copper layer 262 is substantially used as a seed layer 26 in the subsequent electroplating process. The titanium layer 261 is used to improve the adhesion between the sacrificial substrate 25 and the copper layer 262. Next, as shown in FIG. 8e, a certain number of second photoresists 264 are coated on the sacrificial substrate 250 to form a seed layer 260. Here, the second photoresist 264 can be applied by a known photoresist spin coating method or the like. As shown in FIG. 8f, the second photoresist 264 at the sacrifice substrate 25 is formed and exposed to develop a second photoresist pattern 265, and the first trenches 256a and 256b and the second trench 258 are defined. Area.

O: \ 89 \ 89662.DOC -28-200419159 and then as shown in FIG. 8g, a conductive material such as nickel (N0 or nickel alloy (Ni-Co, Ni_W_co)) is deposited on the sacrificial substrate 25 by a plating process. A conductive film 266 is formed where the resist pattern 265 is formed. Here, during the electroplating process used to form the conductive film 266, the copper layer 262 in the seed layer 26 is used as the source of the electroplating material. Next, as shown in FIG. 8h, The conductive film 266 is planarized on the plane above the sacrificial substrate 25. The planarization process of the plane above the sacrificial substrate 25 is performed by a chemical mechanical polishing (CMP) method or a polishing method. In the course of the ideal plating process of the conductive film 266, the planarization process can be omitted only when the conductive film 266 is formed in the opening portion of the second photoresist pattern 265. Then, as shown in FIG. The three photoresist 268 completes the planarization process on the sacrificial substrate 250. Here, the third photoresist 268 can be coated by a well-known photoresist spin coating method, etc. Then, as shown in FIG. Central portion of conductive film 266 formed on 25 The third photoresist pattern 27. Here, a third photoresist pattern 270 can be formed by using a mask exposure process and a development process. Then, as shown in FIG. 8k, a dielectric material such as an epoxide is embedded in the first photoresist pattern. A dielectric plate 272 is formed in the opening portion opened by the three photoresist patterns 270. Then, as shown in FIG. 81, the dielectric plate 272 is planarized on the plane above the sacrificial substrate 250. This planarization uses chemistry The mechanical polishing (CMp) method and polishing method are used. Then, as shown in FIG. 8m, the sacrificial substrate 250 faces downward, and the back surface of the sacrificial substrate O: \ 89 \ 89662.DOC -29- 200419159 2 ^ 0 is polished to The polishing process is performed at a predetermined thickness to adjust the etching depth of the sacrificial substrate 25 to a low height in the subsequent trench formation process. Next, as shown in FIG. 8η, a fourth photoresist 274 of a predetermined thickness is applied to be polished. On the back plane of the sacrificial substrate 250 in the manufacturing process, a fourth photoresist 274 can be formed by a well-known photoresist coating method. Next, as shown in FIG. 80, the fourth photoresist 274 formed on the sacrificial substrate 25 is exposed and exposed. It is then developed to form a substrate for opening the sacrificial substrate. A fourth photoresist pattern 276 in the center of the plane (the central portion of the sacrificial substrate 250). Then, as shown in FIG. 8ρ, an etching process is performed using the fourth photoresist pattern 276 as a cover. A second trench 278 is formed to open the conductive film 266. The etching process here is a dry etching process using a specific proportion of a mixed gas of SF6, CUF8, and O2. More specifically, it uses a so-called Bosch An etching process is performed in the process, which is a reactive ion etching (RIE) derived from the deep trench engraving method. Then, as shown in FIG. 8q, a certain amount is applied to the third trench 278 formed on the back plane of the sacrificial substrate 25. Quantity of epoxy adhesive 28, and then pressurizing the support plate 282 made of a ceramic plate of a predetermined size and inserting it into the trench 278, thereby burying and attaching the support plate 282 to the third trench 278. Next, as shown in FIG. 8r ', the support plate 282 on the back plane of the sacrificial substrate 250 is buried in the third trench 278 and planarized by a planarization process. The planarization process is performed by a chemical mechanical polishing (CMP) method or a polishing method. Then, as shown in FIG. 8s, the third photoresist pattern 270, the fourth photoresist pattern 276, and the seed layer 260 are removed. Finally, as shown in FIG. 8t, the sacrificial substrate 25 is removed by an etching process, so that the completed probe having O: \ 89 \ 89662.DOC -30-200419159 has an upper portion attached to a conductor 284 with an adhesive 280 The supporting component 282 and a dielectric plate 272 on the lower portion of the conductor 284. Fig. 9 is a perspective view illustrating a method of manufacturing a probe for testing a flat panel display according to another embodiment. In the probe manufacturing method according to this embodiment, the first sacrificial substrate 28o and the second sacrificial substrate 282 ′ where the conductor 130 of FIG. 60 is completely exposed or the conductor 284 of the FIG. 8t is completely exposed. A sacrificial substrate 280 and a second sacrificial substrate 282. Here, the alignment key 288, the dielectric plate 284, and the conductor 286 are exposed on the first sacrificial substrate 280 and the second sacrificial substrate 282 to the outside. Then, the first sacrificial substrate 280 and the second sacrificial substrate 282 are attached together by matching the conductor 284 of the first sacrificial substrate 280 and the conductor 284 of the second sacrificial substrate 282 with respect to the alignment key 288 or the eye of the operator. It is then attached to each other with an adhesive. The plurality of conductors 286 formed on the second sacrificial substrate 282 are vertically arranged in a gap space between a plurality of adjacent conductors 286 formed on the first sacrificial substrate 280, so that the conductors 286 of the second sacrificial substrate 282 are vertically arranged. Between adjacent conductors 286 of the first sacrificial substrate 280, and the ends of the conductors 286 of the second sacrificial substrate 282 protrude more horizontally than the ends of the conductors 286 of the first sacrificial substrate 28 (the conductors have a multilayer structure) ). Then, the first and second sacrificial substrates 280 and 282 are removed by the same wet etching process as the previous embodiment, so as to manufacture the multilayer probes at the stacked probes. Although the double-layer probe is described in this embodiment, it should be understood that three or more probes can be manufactured according to the intention of the manufacturer of O: \ 89 \ 89662.DOC -31- 200419159. Fig. 10a is a perspective view illustrating a probe according to another embodiment θθ ^, and Fig. 10b is a cross-sectional view thereof. The probes 10a and 10b do not according to the specific embodiment of the present invention are composed of a double-layer structure, wherein the first probe 300 and the second probe are trained with an adhesive tool such as an adhesive. The formed dielectric substrate is attached to 316, thereby stacking the first probe 300 and the second probe 31. In the k-th pin 300 and the second probe 31, a plurality of conductors 3 and 312 are attached to the lower portions of the support plates 308 and 3, 18 made of Tao Jing, etc. at predetermined intervals, and the dielectric material is For example, dielectric plates 306 and 316 made of epoxides 304 and 314 are attached to the central portions below the conductors 302 and 312, respectively. More specifically, the conductors of the second probe 310 are vertically arranged in the gap * 2 between the adjacent conductors 300 of the first probe 300, and the gap between the two conductors. The interval between 302 and the conductor 312 is adjusted to be extremely short. In the helium structure, the end portions of each of the second probes 31 and 300 are protruded in the horizontal direction from each of the conductors such as 300. In addition, in another eighth embodiment, the support plate 3008 formed by the knife on the first needle 300 and the second slave needle 310 is welded together, thereby making a pile: There is a double-layer structure of the first probe 300 and the first 31. In addition, in one specific embodiment, the brother-bismuth needle 300, or the brother-second probe 310, A 6 and the first probe 300 or the second probe 31, plates 308 and 318. The support for the adhesive is private — υ is attached ^ It is attached together as an adhesive, #this 彳 makes a stack of the first-probe 30 ㈣ hunting this drill with a younger and slave needle 3 1 10 double-layer structure.

O: \ 89 \ 89662.DOC -32- 200419159 Therefore, the first and second probes 300 and 31 are double-layered needles located in a stacked structure and merged into the probe set (not shown) to confirm The normality of the flat panel display device obtained through a series of production processes. The ends of each of the conductors 302 and 312 of the probe are connected to one of the test points of the flat panel display, that is, connected to the rubidium electrode, and the other end is connected to a tape and reel package connected to the driving chip ( Tcp) to confirm the normality of the flat panel display. ('Embodiment 2-4) Fig. 11 is a perspective view illustrating a probe for testing a flat panel display according to another embodiment. As shown in FIG. 11, the probe has a plurality of unit conductors 32 each having a rod-shaped beam member 322, and one end of the beam member 322 has a detection tip 324a integrated therewith, and the other end of the beam member 322 has an integration with 2 Its detection tip 324b. The plurality of unit conductors 32 are arranged at predetermined intervals. i The beam member 322 and the tips 324a and 32 are made of a metal material with excellent conductivity and ductility, such as (Ni) or nickel alloy (Ni_c0,), and the ends of the tips 324a and 324b are rounded. (R〇unding) to make spear kings to suppress the generation of particles. In addition, a pressure-transmitting process and a heating process will be made of a light-transmissive material having a predetermined size and made of a light-transmissive material such as epoxide or polyparaben. The thin film 342 is attached to a plurality of unit conductors 320. Therefore, the probe pieces where the plurality of unit conductors 320 and the thin film 342 are attached are incorporated into a pin set to confirm a flat panel display made through a series of productions Normality.

O: \ 89 \ 89662.DOC -33- 200419159 The connecting tip 324b of the mask is connected to the tape-type seal (TCP) connected to the driver chip. Contact everywhere, that is, contact with the pad electrode, thereby confirming the normality of the flat panel display. In addition, in another specific embodiment, the connection tip 324b of the light beam member 322 of each unit contact assembly may not be provided. Each unit conductor 320 without the connection tip 324b can be connected to a tape and reel package (TCP) via an anisotropic conductive film (ACF). Figures 12a to 12: Explain the test for flat panel displays shown in Figure u. Sectional view of needle manufacturing method. Now, a manufacturing method for testing a flat panel display according to the present invention will be described with reference to FIG. First, a photoresist pattern 332 is formed on a sacrificial substrate 330 made of silicon having a specific directivity such as (1, 0, 0) to form a first trench 33 乜 and a second trench 33 4b in a subsequent process. . The first photoresist pattern 332 is made of a photoresist with high sensitivity. The first photoresist pattern 332 is formed by spin coating a photoresist with a thickness of about 2 microns on the substrate.

The spin coating process on the plane before 330 'is followed by an exposure process and: 'P Next, as shown in FIG. 12b, the first and resist patterns 332 formed on the storm plate 330 are engraved masks, and the first inversion process is performed to form them separately; a trench 334a and a second trench 334b ( The detection tip 32 乜 and the connection ^ 324b are formed therein). " The first etching process for forming the trenches 334a and 334b can be carried out by using a chemical treatment of potassium hydroxide (KOH) and deionized water mixed in predetermined seven cases < wet etching O: \ 89 \ 89662.DOC -34- 200419159 process. A sacrificial substrate with a specific directivity is formed in a non-isotropic wet process using a chemical, thereby forming a first channel trench 334a and a second channel trench 334b with a pyramidal or conical cross section. Then, as shown in FIG. 12c, the first photoresist pattern claw is used as the engraving mask, and the second post-etching process is performed to form the first trench 334a and the second trench side of the pyramid-shaped or cross-sectional cone. The depth is deep, and the ditch 334 & and ditch 334b have undergone a rounding process. Here, the etching process is a dry etching process using a specific ratio of SF < 6, and a mixed gas with 02. & More specifically, a second etching process is performed using a so-called Bosch process, which is a reactive ion etching (RIE) derived from a deep trench etching method. Then, the first trenches 334a and the second trenches 334b having a pyramidal or conical section are subjected to a first process to a depth of 3 Gm to micrometers, and the bottoms of the trenches 334a and 334b are subjected to a rounding process. Then, as shown in FIG. 12D, after the first photoresist pattern 332 of FIG. Α is removed by the wet rhyme engraving process, a sacrificial substrate coffee that has previously undergone the second # engraving process is formed as a seed layer 336 in the subsequent process Use a copper layer with a thickness of 2,000 angstroms to 3,100 angstroms. Here, a copper layer can be formed by a physical deposition method such as a sputtering process. Next, as shown in FIG. 12e, a second photoresist pattern 338 is formed, and the region where the beam member 332 is to be formed in a subsequent process is opened. Using a spin coating process, an exposure process, and a development process, a second photoresist pattern 338, which is formed by a disk and has a photoresist similar to the first photoresist pattern 332, is formed.

O: \ 89 \ 89662.DOC -35- 200419159 and then as shown in Figure 12f, the electroplating process is used to form a metal material with excellent conductivity and ductility such as nickel (Ni) or nickel alloy (Ni_c0, Ni_w_c〇). A metallographic film having a predetermined thickness is then used to planarize the plane above the sacrificial substrate 33 by a chemical mechanical polishing (cMp) method, an etchback method, a polishing method, or the like to form a beam member 340. However, the formation process of the seed layer used in the plating process in the previous implementation process can be omitted. The chemical vapor deposition (CVD) method, physical vapor deposition (PVD) method, etc. are used to form Ni, Ni_c0, Ni_w_c. A metal film with a predetermined thickness is formed to form a beam member 34. In addition, after the S palladium line is flattened, an additional cleaning process is performed to remove organic materials and particles on the sacrificial substrate 3 3 0. Next, as shown in FIG. 12g, after the second photoresist pattern 338 in the figure is removed by a wet etching process, the square 0 of the second photoresist pattern 338 is removed from the sacrificial substrate 33 and then as shown in FIG. 12h, ㉟ A thin film 342 made of a light-emitting material such as epoxide or parylene is cut on the sacrificial substrate 33. Then, the thin film 342 is attached to the sacrificial substrate 33 using a pressure process and a heating process. The beam member 340 is on a plane. Here, the upper portion of the beam member 34o formed of a metal film on the sacrificial substrate 33o is inserted and attached to the thin film 342 by pressing and heating the thin film 342. Finally, as shown in FIG. 12i, the sacrificial substrate 330 is removed by a wet etching process using a chemical, thereby completing a probe sheet with a rod-like beam member 34o, and two ends of the beam member 340 are divided into joints. The tip 324a is connected to the tip 32. O: \ 89 \ 89662.DOC -36- 200419159 (specific embodiment 2-5) In the first-specific embodiment of the method for manufacturing a probe for testing a flat panel display according to the present invention, 'as shown in FIG. 13a, As the sacrificial substrate 400, silicon (Si) having a predetermined thickness polished on both sides is used. The sacrificial substrate 400 after the grinding process or the polishing process is about 400 to 500 microns thick. Next, as shown in FIG. 13a (b), a lithography process is used to form first photoresist patterns 402 & and 402 on the two planes of the sacrificial substrate 400 corresponding to the shape of the probe. Since the patterns 402a and 402b are formed here using a lithography process, they can be accurately formed at a desired position. Therefore, compared with manual operation, the error can be further improved. That is, a plurality of conductors of the same size can be formed on the sacrificial substrate 400 at the same interval. In particular, the conductor 41 仏 and the sacrificial substrate 400 on the plane a above the sacrificial substrate 400 can be alternately formed at precise positions. The conductor 412b on the lower plane B. Therefore, as shown in FIG. 13a (b), the first photoresist patterns 402a and 402b formed on the sacrificial substrate 400 above and below the planes A and B are asymmetric structures where the probes are alternately formed later. Middle formation. Then, as shown in FIG. 13a (c), the area on the plane a above the sacrificial substrate 400 is turned on by the first photoresist pattern 402a, and is etched by anisotropic dry etching to sacrifice the substrate 4 A groove 404 having a probe shape is formed on the upper surface of the upper surface. Next, as shown in Fig. 13a (d), the lower plane B of the sacrificial substrate 400 is also etched by the same process as the upper plane, so as to form a groove 4 06 with a probe shape. Here, the grooves 4004 and 406 formed on the upper and lower planes A and B of the sacrificial substrate 400 have an asymmetric structure in which the grooves 404 and 406 alternate with each other. O: \ 89 \ 89662.DOC -37- 200419159 In addition, the etching depths of the grooves 404 and 406 formed on the upper and lower planes A and B of the sacrificial substrate 400 are in the range of 70 to 100 microns, which is for the subsequent planarization process. The removal depth is taken into account, so the etch depth is relatively deeper than the resulting conductor depth (ie, 60 microns). Then, as shown in FIG. 13a (e), the first photoresist patterns 402a and 402b remaining on the lower and upper planes A and B of the sacrificial substrate 400 are removed by a wet-touch engraving process using a chemical solvent. Next, as shown in FIG. 13a (f), seed layers 408a and 408b are formed, and a plating process is performed to form conductors on two planes of the sacrificial substrate 400. The seed layer here is composed of a titanium layer with a thickness of 500 angstroms and a copper layer with a thickness of 5,000 angstroms. The copper layer is used as a seed layer for electroplating in the subsequent electroplating process, and the titanium layer is used to improve the adhesion between the sacrificial substrate 400 and the copper layer. Then, as shown in FIG. 13a (g), the second photoresist patterns 410a and 410b are formed by a lithography process to open predetermined portions on the two planes of the sacrificial substrate 400 and 8. Then, as shown in FIG. 13b (h), the conductors 412a and 412b opened with the second photoresist patterns "M and 41〇b" are formed on the two planes 8 and 3 of the sacrificial substrate 400 by the electrolytic f electric process. Using the second photoresist pattern as a base, a conductive material such as nickel 杈 is deposited by electrolytic 夤 plating method or nickel alloy (Ni Co Nl-W_Co) to form conductors 412a and 412b on the sacrificial substrate 400. FIG. 13b (i ) To (p) explain the longitudinal and lateral views, and clearly explain the present invention. As shown in FIG. 13 (i), the two planes of the photodiode pattern photoresist 41a and 410b and the sacrificial substrate 400 are shown. A and B sudden ψ + 4 wounds are removed in order to sacrifice the substrate 4〇〇

O: \ 89 \ 89662.DOC • 38- 200419159 The two planes A and B are flat. Here, the planarization process is performed by a chemical mechanical CMP method, a polishing method, a folding method, and a polishing method. However, in the process of forming an ideal electrical process for the conductors 412a and 412b, only the grooves with a probe shape 404 and the inward-shaped "conductor 41 ^ and view (using the second photoresist pattern 41〇a And 410b on), the planarization process can be omitted. In addition, after the conductors 412 & and 41213 are flattened, a gold plating layer is formed on the upper plane by a gold plating process to improve the conductivity of the conductors. In addition, in the case of using methods other than the ytterbium bonding process such as physical vapor deposition (PVD) and chemical vapor deposition (CVD) to form the conductors 412 & and 4121), the previous process of forming the seed layers 408a and 408b can be omitted . Next, as shown in FIG. 13b (a), a third photoresist pattern 414 is formed by a lithography process to open the central portion on the plane a above the sacrificial substrate 400. Next, as shown in FIG. 13b (k), the area turned on by the third photoresist pattern 414 is etched by an isotropic dry etching process. Here, half of the entire sacrificial layer including the conductor 412 & formation is etched to form the first trench 410. Next, as shown in FIG. 13c (l), after the epoxide 420 applied to the first trench 416 as a dielectric is thermoplasticized, and before the epoxide 420 is cured, it will be used for support. A ceramic plate 418 is adhered to the upper portion. Since the ceramic plate 418 is made of a hard material, the ceramic plate has a function of a supporting component for resisting a specific external force applied to the probe and avoiding deformation of the probe, and can achieve the function of maintaining the appearance of the probe. After the process of forming the epoxide 420 and the ceramic plate 418 is completed, the process on the plane a above the sacrificial plate 400 is completed. The remaining processes on the plane B below the sacrificial substrate 400 will now be described.

O: \ 89 \ 89662.DOC -39- 200419159 Then, as shown in FIG. 13c (m), a fourth photoresist pattern 424 is formed by a lithography process to open the central portion on the plane B below the sacrificial substrate 400. Next, as shown in FIG. 13c (n), the area opened by the fourth photoresist pattern 424 is etched in an isotropic dry etching process. Here, half of the entire sacrificial layer including where the conductor 4 is formed is etched to form a second trench 426 for exposing the epoxide 420.

Then, as shown in Fig. 13d (o), an epoxide 428 applied to the second trench 426 as a dielectric is thermally plasticized. Then, as shown in the figure, similar to the upper plane A, a ceramic plate made of a hard material is also attached on the upper part of the epoxide 428 in the lower plane B of the sacrificial substrate 400. In addition, as shown in FIG. 13 d (p), the photoresist patterns 414 and 424 on the upper and lower planes of the sacrificial substrate 400 are simultaneously removed by using a predetermined chemical, and then using chemicals such as potassium hydroxide (KOH) and tetramethyl hydrogen Ammonia oxide (TMAH) is selectively engraved with the remaining sacrificial substrate 400. As a result, the upper and lower conductors 412a and 412b, which are alternately arranged according to the MEMS process, can be used to test the conductors of the flat panel display. In other words, the isotropic dry etching process used to form the trenches 416 and 426 shown in FIG. 13b (k) is a dry etching process using a specific ratio of “6, c4F8, and 0 2 mixed gas. More specifically In other words, the so-called Bosch process is used to apply the etching process, which is a reactive ion etching (RIE) derived from the deep trench etching method. All of the operations performed on the planes a and B above the sacrificial substrate 400 are completed. After the process, the process of cutting the sacrificial substrate 400 is performed, and a method of dividing a plurality of conductors formed on a plane above the sacrificial substrate 400 into predetermined units with a predetermined number of conductors

O: \ 89 \ 89662.DOC 200419159 needle group. In other words, as shown in FIG. 25, the sacrificial substrate 400 is cut so that each conductor group has 12 conductors, and then a probe is formed. In particular, the conductors formed on the upper plane A protrude outward than one of the ends of the bodies formed on the lower plane B, and the lengths of the outward protrusions are all ^ This is a probe manufactured by a separate method, because The pressure applied to the upper and lower probes is equal to facilitate probe operation. The appearance of the probe manufactured according to the previous method is shown in Figure 14. FIG. 14 is a perspective view illustrating a probe with a single-sacrificial substrate manufactured by the process shown in FIG. As shown in FIG. 14, the conductors 36a and 36b are arranged on the upper and lower planes of the sacrificial substrate at a predetermined interval. The conductor 3 is formed by embedding a conductive material in a first trench formed on a lower and upper plane of a silicon sacrificial substrate by a lithography process and an etching process. In addition, they are thin conductive layers made of materials with higher conductivity than these conductors, which are located on the plane of each conductor hall 360b to improve the conductivity of the conductors 360a and 360b. In addition, a dielectric journal "and% ^" is formed on the upper and lower portions of the probe. The dielectrics 362a and 362b are formed by applying a dielectric material to the second plane formed on the two planes of the sacrificial substrate by an inscription process. It is formed in a trench. The dielectric material here is preferably an epoxide. Finally, a supporting member 364 is provided in the probe. The supporting member 364 is formed on at least the outer plane of the dielectrics 362a and 362b. The supporting component 364 is preferably made of a hard material. The supporting component is preferably formed by attaching a ceramic plate to the dielectrics 362a and 362b.

O: \ 89 \ 89662.DOC -41-200419159 (Specific embodiments 2-6) As shown in Fig. 15a (a), a flat silicon wafer with both surfaces polished is prepared as a sacrificial substrate 450. The sacrificial substrate 450 obtained by a grinding process or a polishing process has a depth of 400 to 500 microns. Then, as shown in Fig. 15a (b), a first layer 452 is formed on the entire upper plane A of the sacrificial substrate 45 by a sputtering process. The first layer 牦 2 here is composed of a titanium layer = 500 Angstroms and a copper layer 5,000 Angstroms thick. The copper layer is essentially used as a seed layer in the subsequent electroplating process. The titanium layer is used to improve the adhesion between the sacrificial substrate 45 and the copper layer. Next, as shown in FIG. 15a (c), a first photoresist pattern 荦 454 is formed by using a lithography process, and a plane where a conductor is to be formed is opened on the plane a above the sacrificial substrate 45 °. Next, as shown in FIG. 15a (d), a conductive material such as nickel (Ni) or a nickel alloy (Ni_Co, Ni_w_co) is deposited by an electrolytic plating method to form a first conductor #%. Next, as shown in Fig. 15a (e), the upper plane of the first conductor 456 is flattened by removing uneven portions of the plane above the first conductor 456. The planarization process is performed using a chemical mechanical polishing (CMP) method, a polishing method, a folding method, a polishing method, and a polishing method. However, in the process of forming an ideal plating process for forming the first conductor 456, the planarization process may be omitted only in the case where the first conductor 456 is formed using the first photoresist pattern 454 turned on. In addition, in the case where the first conductor 456 is formed using a method other than the plating process such as physical vapor deposition and chemical vapor deposition (CVD), the process of forming the first layer 452 previously may be omitted. Then, as shown in Fig. 15a (e), a gold plating process is performed on the upper portion of the first conductor 456 to form a first gold plating layer 458. The purpose of this process is to improve exploration

O: \ 89 \ 89662.DOC -42- 200419159 Needle conductivity. Then, as shown in FIG. 15a (a), the first photoresist pattern 454 is removed by a wet last engraving process. The exposed part of the first layer M? Is also removed here. Then, as shown in ®15a (g), the Lee Lai film process forms a second photoresist pattern 460 to open a predetermined portion of the first conductor 456. Next, as shown in Fig. 15a (h), a thermoplastic epoxide 462 having an adhesive function is applied to the first conductor 456 with a second photoresist pattern 46o opened. Then, as shown in Fig. 15b, before the epoxide is partially cured, a ceramic plate 4 6 4 is attached on the upper part of the epoxide 4 6 2. Next, as shown in FIG. 15b (a), the planar surface on the ceramic plate (4) is planarized by a grinding process. The planarization process here is the same as the first embodiment. When the planarization process is completed, the process on the plane A above the sacrificial substrate 45 is completed. The process on the plane b below the sacrificial substrate 450 will now be described. First, as shown in FIG. 15b (k), the sacrificial substrate 45 is faced down. Next, as shown in FIG. 15b (l), the plane B below the sacrificial substrate 45 is removed to half of the original thickness of the sacrificial substrate 450 by a polishing process. Therefore, after the grinding process, the remaining sacrificial substrate depth range is about 240 to 250 microns. Next, as shown in FIG. 15b (m), a third photoresist pattern 466 'is formed by a photolithography process to open a predetermined dielectric portion on the plane B below the sacrificial substrate 450. Then, as shown in FIG. 15b (n), a predetermined portion of the sacrificial substrate 450 opened by the third photoresist pattern 466 is removed by using an anisotropic dry etching process to form a trench 467. The seed layer 452 is also removed at the same time. Then, as shown in FIG. 15b (o-1), a thermoplastic epoxy O: \ 89 \ 89662.DOC-43-200419159 468 as a dielectric is applied to the trench 467. The top surface of the epoxide is planarized by a polishing process, and then the surface is planarized as shown in Fig. 15b (p-1). Next, as shown in FIG. 15c (ql), the second photoresist pattern 460 and the third photoresist pattern 466 are removed by etching, and the etching process is performed to remove the second photoresist pattern 460 and the third photoresist pattern 466. The rest of the substrate 450 is sacrificed to complete the single-layer probe according to the present invention. The conductor formed here may have an equal length portion protruding from both sides of Tao Shetuo J ^ Plate 464 Shenyang. A method for manufacturing a double-layered probe according to the present invention will now be described. Next, as shown in FIG. 15c (〇-2), in the state of completing the process of FIG. 1, after adding epoxide 47, which is a dielectric and an adhesive, to the trench w ′, and then the epoxide Before 470 is cured, ceramic plate 472 is attached. Although the attached pottery is similar to a rectangular parallelepiped in appearance to the trench 467, M can also be a parallelogram pottery plate 81 °, in which both ends 811 and 8ΐ2 are inclined as shown in Figure 2U; or A step-shaped ceramic research board 82, the ends 821 and μ] of which are step-shaped, as shown in FIG. 21b. As a result, in the produced probes, the conductors protrude outwards and are of equal length. Therefore, during the pin operation, the pressure applied to all probe pins is the same. As shown in Fig. 15c (p-2), the flat surface of the ceramic plate is flattened by a polishing process. The planarization process here may be the same as that in the first embodiment. Then, as shown in FIG. 15d (q-2), the plane B is flattened under the sacrificial substrate 450, and a second layer 474 for forming a conductor is formed on the entire lower plane 6 of the sacrificial substrate 450. The second layer 474 here is similar to a titanium layer having a thickness of 500 angstroms and a copper layer having a thickness of 5,000 angstroms. The copper layer is essentially used as a subsequent electricity money process

O: \ 89 \ 89662.DOC -44- 200419159 seed layer. The titanium layer is designed to improve the adhesion between the sacrificial substrate 45g and the copper layer. Next, as shown in FIG. 15d (q-2), when the second layer 474 is formed, a fourth photoresist pattern 476 is formed by a lithography process to open a predetermined conductor on the plane B below the sacrificial substrate 45 °. A second conductive material 478 is formed by depositing a conductive material (Ni-W-Co) using an electrolytic plating method. Next, as shown in FIG. 15d (r-2), as shown in nickel (Ni) or a nickel alloy (Ni_c〇), as shown in FIG. 15d (S_2), the second conductor 478 is removed by removing uneven portions on the plane of the second conductor 478. The upper plane is flattened. The flattening process performed here is the same as that used in the specific embodiment. However, in the process of forming the ideal electric mine process for forming the second conductor, only the fourth photoresist pattern μ is used. In the case where a conductor is formed in the opening portion, the planarization process may be omitted. In addition, in a case where the second conductor 478 is formed using a method other than the plating process such as physical vapor deposition (pvD) and chemical vapor deposition (CVD), Since the aforementioned layers are not required, the process of forming the second layer 474 can be omitted. Then: A gold mining process is performed on the upper part of the second conductor 478 to form the second gold layer 480. The purpose of this process is to improve the exploration. The conductivity of the needle is then removed, as shown in FIG. 15d (t-2), using a wet button process to remove the fourth photoresist pattern 467. At the same time, the second layer μ protruding outward from the conductor 478 is also removed. Then, a fifth photoresist pattern 482 is formed by a photolithography process to turn on the second conductor 478. A support component is scheduled to be formed. Next, as shown in FIG. 15d (U-2), a thermoplastic epoxide 484 is applied to a portion of the second conductor 478 opened by the fifth photoresist pattern 482. Then, as shown in FIG. 15e (v-2 As shown in the figure, the applied epoxidized O: \ 89 \ 89662.DOC -45-2UU419159 is planarized by a grinding process. The planarization process here is the same as that of the first embodiment. Then, as shown in head 15e ( As shown in w_2), the fifth and second photoresist patterns 482 and 460 are removed by a wet inversion process. Take ~ 'and then use FIG. 15e (x-2) to use the wet residual etching process shift. The remaining part of the silicon sacrificial substrate 450 is removed. The appearance of the probe manufactured according to the aforementioned method is shown in Figure 16. Figure 16 illustrates the structure of a probe manufactured using a single-sacrificial substrate using the process shown in Figure 15. According to Figure 15 The probe manufactured by the manufacturing process includes a dielectric in the central part, not as shown in Figure 16. An anti-corrosive shell 370 is formed by attaching an epoxy 370a and a ceramic plate 370b. In other words, an etching process is used to form a predetermined portion on a sacrificial substrate. Trench, applying epoxide 37〇a to the trench, and before the epoxy solidifies, Entry and attachment ceramics: It is plate 3 ·, so as to form the dielectric 37 °. Here, the epoxide 37〇a is used as an adhesive. In addition, the conductors 372a and 372b are arranged in parallel at a predetermined interval in the dielectric. Capacitor 570 on the upper and lower planes. A lithography process is used to form a first protective film pattern on the upper and lower planes of the sacrificial substrate, and then a conductive material is deposited on the area opened with the first film pattern to form a conductor. 372a and 372b. Here, when a conductive material is formed by an electrolytic plating method, a seed layer is formed in advance on the upper and lower planes of the sacrificial substrate. In addition, the conductive layers 374a and 374b made of a material having higher conductivity than the conductors 372 & and 37 holes are located on one of the planes of the conductors 372a and 37 to improve the conductivity of the conductors. The conductive material here is preferably gold (Au).

O: \ 89 \ 89662.DOC -46- 200419159 Finally, a support assembly 37 is formed on the upper and lower planes of the dielectric to protect and fix the conductors 372a and 372b. The support components 376a and 376b are preferably made of epoxide or ceramics attached and fixed with epoxide. The support plate is denoted by the code 3 7 8. (Specific embodiment 2-7) As shown in Fig. 17a (a), two planes of a silicon wafer are polished to prepare a sacrificial substrate 550. The sacrificial substrate 55 manufactured by a grinding process or a polishing process is 400 to 500 microns thick. Then, as shown in FIG. 17a (b), a first photoresist pattern 5 52 'is formed by a photolithography process, and a predetermined dielectric portion where the sacrificial substrate 55 is turned on is formed. Then, as shown in Fig. 17a (c), the first photoresist pattern 552 is used to etch the plane a above the sacrificial substrate 550 to a predetermined depth to form a trench 551. The etching depth here ranges from 240 to 250 microns, which is slightly deeper than the thickness of the dielectric to be formed, which is 240 microns. Next, as shown in FIG. 17a (d), after applying the ring = 554, which is used as a dielectric and an adhesive, in the trench 551, and before the epoxy 551 is cured, a ceramic plate 556 is attached. . Although the attached ceramic plate has a rectangular parallelepiped shape similar to the trench 551, the ceramic plate 82 can also be a parallelogram inclined at both ends M and M2 as shown in Figure 2U, or ceramic The plate 820 may have a step shape with both ends 821 and 822 stepped. As a result, in the manufactured probe, the length of the outwardly protruding portion of the conductor is the same, so that the pressure applied to all the probe pins during the probe operation is equal. Then, as shown in FIG. 17a (a), the planar surface above the ceramic plate (⑽) is flattened by a grinding process. The planarization process here is the same as the first embodiment. in

O: \ 89 \ 89662.DOC -47- 200419159 When flattening the upper surface of the ceramic plate 556, the entire upper plane A of the sacrificial substrate 550 is used to form the sound 558 for the conductor forming plating process. 9 The first layer 558 here is composed of a titanium layer with a thickness of 500 angstroms and a copper layer with a thickness of 5,000 angstroms. The copper layer is essentially used as a seed layer in the subsequent electroplating process. 'The titanium layer is used to improve the adhesion between the sacrificial substrate 550 and the copper layer. Next, as shown in FIG. 17a (f), a second photoresist pattern 560 is formed by a lithography process, so that a predetermined conductor is opened on the plane a above the substrate 550: Next, as shown in FIG. The electrolytic plating method deposits a conductive material such as nickel (Ni) or a nickel alloy (Ni-Co, Ni_w_c0) to form a first conductor%]. Next, as shown in Fig. 17a (h), the upper plane of the first conductor 562 is flattened by removing uneven portions or excessively formed portions of the plane above the first conductor 562. The planarization process here is the same as the method disclosed in the first embodiment. However, in the course of the ideal plating process for forming the first conductor, the planarization process can be omitted only in the case where the conductor is formed by using the opening of the second photoresist pattern 560. In addition, in the case where the first conductor 562 is formed using a method other than the clock process such as physical vapor deposition and chemical vapor deposition (CVD), the process of forming the first layer 558 may be omitted. Then, as shown in FIG. 17b (i), a gold plating process is performed on the upper portion of the first conductor 562 to form a first gold plating layer 564. The purpose of this process is to improve the conductivity of the probe. Then, as shown in FIG. 17 (b), a first protective film 566 is formed to protect the first conductor 562 formed on the plane A above the sacrificial substrate 55 and the first gold plating layer.

O: \ 89 \ 89662.DOC -48- 200419159 564. Here is a protective film with tape or photoresist. As a result, the process on the plane A above the sacrificial substrate 550 has been completed, and then the process on the plane B below it has begun. First, as shown in FIG. 17b (k), the sacrificial substrate 55 is faced downward, and the plane B below the sacrificial substrate 550 is polished by grinding or polishing. The sacrificial substrate 550 is polished to a thickness where the ceramic plate 556 is exposed. Next, as shown in Fig. 17b (l), a second layer 568 is formed on the entire lower plane b of the sacrificial substrate 55 for the conductor forming plating process. Then, a third photoresist pattern 570 is formed by a lithography process to turn on the conductor portion that is scheduled to be formed on the plane b below the sacrificial substrate 55. Then, as shown in FIG. 17b (m), a second conductor 572 is formed on the place where the third photoresist pattern 570 is opened. Next, as shown in FIG. 17b (n), if the plane above the second conductor 572 is not uniform, a planarization process is performed on the upper plane. The planarization process here is the same as the method disclosed in the first implementation. However, in the process of forming an ideal electric clock for forming the second conductor 572, only in the case where the second conductor 572 is formed in the opening portion of the second photoresist pattern 570, the planarization process can be omitted. In addition, in the case where the second conductor 572 is formed using a method other than the electroplating process, such as physical vapor deposition (PVD) and chemical vapor deposition (CVD), the previous process of forming the second layer 568 can be omitted. Then, as shown in Fig. 17b (o), a gold plating process is performed on the plane above the second conductor 572 to form a second gold plating layer 574. The purpose of this process is to improve probe conductivity. Then, the wet etching process will be used to planarize the substrate 550.

O: \ 89 \ 89662.DOC -49- 200419159 A The first protective film formed on A is removed, and the second and third photoresist patterns 560 and 570 are removed at the same time. The exposed part of the second layer 568 is also removed here. The fourth photoresist pattern 578 is used to turn on the second conductor 572 to form a branch component. Then, as shown in FIG. 17C (a), a second protective film 576 is formed on the plane A above the sacrificial substrate ㈣ to protect the upper plane a. Next, it is formed by a lithography process. Then, as shown in FIG. I7c⑷, a thermoplastic epoxide 58 is applied to a place where the fourth photoresist pattern 578 is opened. Then, as shown in FIG. 17c (r), a plane above the epoxide 58 is planarized by a polishing process. The planarization process is the same as the first embodiment. Then, as shown in Fig. 17c (s), the second protective film 576 on the plane a above the sacrificial substrate 55 is removed. Then, a fifth photoresist pattern 582 is formed to turn on the first conductive support 562 at a predetermined formation supporting component. Next, as shown in FIG. 17c (t), a thermoplastic epoxide material 5 is applied to the place where the fifth photoresist pattern 582 is opened, and then a plane above the epoxide π * is planarized by a grinding process. Finally, as shown in FIG. 17c (u), the fourth and fifth photoresist patterns 578 and 582 are simultaneously removed by a wet etching process, and the first and second conductors 562 and 572 are selectively removed by a wet etching process using KON. The remaining portion of the sacrificial substrate 55 is left in between. After the sacrificial substrate 550 is removed, the probe of the present invention is completed. (Specific embodiment 2-8) As shown in FIG. 18a, a silicon wafer whose two planes are polished is prepared as a sacrificial substrate, and a sacrificial substrate prepared by a grinding process or a polishing process is 65 mm thick and 24 mm thick.

O: \ 89 \ 89662.DOC -50- 200419159 Next, as shown in Fig. 18a (b), attach the flat surface 6 below the sacrificial substrate 65 °-tape to avoid contamination, or apply a coating material 652 such as photoresist On it. Next, as shown in FIG. 18a (c), the center portion of the sacrificial substrate 650 is cut along the cutting portion 653 with a predetermined shape by a tangent process. Then, as shown in FIG. 18a (d), a sacrifice process is used to generate a sacrificial substrate block 654 with a predetermined size, that is, a central silicon block, and removed from the sacrificial substrate 65. As a result, a trench 655 is formed in the central portion of the sacrificial substrate 650. Next, as shown in Fig. 18a (e), a ceramic plate 656 serving as a dielectric is inserted into the trench 655, and then an epoxide 658 is applied and embedded in the gap between the ceramic plate 656 and the sacrificial substrate 650. The epoxide here has a function of attaching the ceramic plate 565 and the sacrificial substrate 650. Next, as shown in Fig. 18a (f), the plane a above the sacrificial substrate 650 is flattened. Next, as shown in FIG. 18a (g), the coating material 652 formed on the plane b below the sacrificial substrate 650 is removed, and similar to the plane a above the sacrificial substrate 650, the lower plane B is planarized. Next, as shown in FIG. 18a (h), the first layers 660 and 662 for forming a conductor for the electroless process are formed on the entire lower plane b of the sacrificial substrate 650. The first layers 660 and 662 here are composed of a titanium layer with a thickness of 500 angstroms and a copper layer with a thickness of 5,000 angstroms. The copper layer is used as a seed layer for electroplating in the subsequent electroplating process. The titanium layer is used to improve the adhesion between the sacrificial substrate 650 and the copper layer. Next, as shown in FIG. 18a (i), a first protective film 667 for protecting the seed layer 662 is formed on the plane B below the sacrificial substrate 650, and a first process is formed on the plane a above the sacrificial substrate 650 by a lithography process. The photoresist pattern 664 opens a predetermined conductor formation portion of the sacrificial substrate 650.

O: \ 89 \ 89662.DOC -51-200419159 Then as shown in Fig. 18a⑴, a first conductor 666 is formed on the place where the first photoresist pattern _ is opened. Here, the first conductor 666 is formed by depositing a conductive material such as nickel (Ni) or a nickel alloy (Ni_co, Ni_w_c, etc.) by an electrolytic plating method. Then, as shown in FIG. 18b (k), the first conductor is removed The unevenness of the plane above 666 planarizes the plane above the first conductor 666. The planarization process here is the same as the method disclosed in the first embodiment. However, the ideal plating process used to form the first conductor 666 In the process, only in the case where the first conductor 666 is formed in the opening portion of the first photoresist pattern 664, the planarization process can be omitted. Then, a gold plating process is performed on the entire upper portion of the first conductor 666 to form a first A bond gold layer 668. In addition, in the case where the first conductor 666 is formed by a method other than the electroplating process such as physical vapor deposition and chemical vapor deposition (CVD), since there is no plutonium seed layer, uranium is first formed. The manufacturing process of the layer 660 can be omitted. Next, as shown in FIG. 18b (l), a second protective film 670 is formed on the first conductor 666 to protect the plane A on the sacrificial substrate 65 by using tape or photoresist. Complete the formation of the second protective film 670 That is, the first process on the plane A above the sacrificial substrate 650 is completed. Then, the sacrificial substrate is directed downward, and then the protective film a? For protecting the plane below the sacrificial substrate 650 is removed. The process on the plane b. Next, as shown in FIG. 18b (m), a second photoresist pattern 672 is formed by a photolithography process to open a predetermined conductor formed on the plane B under the sacrificial substrate 650. Then, as shown in FIG. 18b (n) As shown, the second conductor 674 is formed on O: \ 89 \ 89662.DOC -52- 200419159 on the opening portion of the second photoresist pattern 672. Here, a conductive material such as nickel (Ni) or an alloy ( Ni_Co, Ni | C〇) to form the second conductor ⑺. Then, as shown in FIG. 18b ，, the upper plane of the second conductor 移除 is removed to flatten the upper plane. The planarization process here The method is the same as that disclosed in the first embodiment. After the planarization process is completed, a gold plating process is performed on the entire upper portion of the second conductor 674 to form a second gold plating layer 676. 9 However, it is used to form the second conductor 674 In the process of the ideal circuit process, only the second In the case where a conductor is formed in the opening of the resist pattern 672, the planarization process can be omitted. In addition, a method other than the electricity process such as physical vapor deposition (ρ, and chemical vapor deposition (CVD) is used to form a second conductor). In the case of 674, the previous process of forming the seed layer 662 can be omitted. Then, as shown in FIG. 18b (P), the second photoresist pattern 672 is removed by the wet engraving process. The second layer is also removed here The exposed part of the milk. In addition, the first photoresist pattern 664 protected by the second protective film 670 can be removed at the same time. Then, as shown in FIG. 18b (q), a third photoresist pattern 678 'is formed to turn on The second conductor 674 is intended to form a support assembly. • Next, as shown in FIG. 18c ', using the third photoresist pattern 678 as a mold, a bad oxide 680 is applied to the opening of the second conductor 674. Next, as shown in FIG. 18c (s), the plane above the epoxide 68 is flattened by a polishing process. Next, as shown in FIG. 18C, the second protective film 67 formed on the plane a above the sacrificial substrate 650 is removed. The first photoresist is then removed using a wet etching process

O: \ 89 \ 89662.DOC -53- 200419159 water 664, and the exposed part of the seed layer 660 is also removed. Next, as shown in FIG. 18e (U) ', a fourth photoresist pattern is formed by using a lithography process to open the first conductor 666 where a branch component is to be formed. Then, the fourth photoresist pattern 682 is used to apply an epoxide 684 on the opening of the conductor. Then, a planarization process is performed on the top surface of the epoxide 684 by a polishing process. Next, as shown in FIG. 18c (a), the fourth photoresist pattern 678 and 682 on the third disk are simultaneously removed by the wet last engraving process, and the remaining portion of the sacrificial substrate 650 is removed by the wet wet engraving process. Then, as shown in Fig. 18c (w), after the epoxide 658 is removed, the probe of the present invention is completed. (Specifically, Examples 2 to 9) As shown in FIG. 19a (a), a ceramic plate having both surfaces polished is prepared as a sacrificial substrate 750. The sacrificial substrate after the grinding process or the polishing process is 75 mm thick to 500 μm. Next, as shown in FIG. 19a, two trenches 752 are formed on a predetermined portion on the plane A above the sacrificial substrate 750 by a tangent process. Then, as shown in FIG. 19a (C), a trench 752 is formed on the plane a above the sacrificial substrate 750 to form a first layer 754 'for the copper plating structure to form a clock process and a trench is formed. Steel ore structure is used as trench and buried material. The first layer 754 here is composed of a titanium layer and a copper layer. Next, as shown in FIG. 19a, a photoresist pattern 756 'is used to form a first photoresist pattern 756' on the sacrificial substrate 75 () to form trenches 752 at a predetermined level. Then, as shown in ® 19a ，, a galvanized structure is formed on the trench opened for the first photoresist pattern 756 as a trench buried material by the electric mining process.

O: \ 89 \ 89662.DOC -54- 200419159 758 〇 Next, as shown in FIG. 19a (f), the first photoresist pattern 756 and a portion of the copper-plated structure 758 protruding upward from the sacrificial substrate 750 are removed, so that the sacrificial substrate is removed. The plane A above 75 ° is flattened. The planarization process is performed until the surface A of the plane A and the copper-plated structure 758 above the sacrificial substrate 75 are adjacent to each other. Next, as shown in Fig. 19a (g), a second layer 76o for forming a conductor is formed on the plane a above the sacrificial substrate 75o. The second layer 760 here is composed of a titanium layer with a thickness of 500 angstroms and a copper layer with a thickness of 5,000 angstroms. The copper layer is essentially used as a seed layer for electroplating in the subsequent electroplating process, and the titanium layer is used to improve the adhesion between the sacrificial substrate 750 and the copper layer. Next, as shown in FIG. 19b (h), a second photoresist pattern 762 is formed by a lithography process to open a predetermined conductor formed on the sacrificial substrate 75o. Next, as shown in FIG. 19b (a), a first conductor 764 is formed on the place where the second photoresist pattern 762 is turned on. Here, a first conductive material is formed by depositing a conductive material such as nickel (Ni) or a nickel alloy (Ni-Co, Ni_w_co) by an electrolytic plating method. Next, as shown in FIG. 19b (a), the upper plane of the first conductor 764 is flattened by removing unevenness in the plane above the first conductor 764. The planarization process here is the same as the method disclosed in the first embodiment. However, in the course of an ideal plating process for forming the first conductor 764, the planarization process may be omitted only in the case where a conductor is formed in the opening portion of the second photoresist pattern 762. In addition, in the case where the first conductor 764 is formed by using a method other than a power ore process such as physical vapor deposition and chemical vapor deposition (CVD), the previous process of forming the second layer 760 may be omitted.

O: \ 89 \ 89662.DOC -55- 200419159 Then, as shown in FIG. 19b (k), a gold-mine process is performed on the entire upper portion of the first conductor 764 to form a first gold plating layer 766. Next, as shown in FIG. 19b (l), a protective film 768 for protecting the first conductor 764 is formed on the plane a above the sacrificial substrate 750, and a first gold-plated layer 766 is formed. Process on the plane a above the substrate 75. The process on the plane b below the sacrificial substrate 750 will now be described. First, as shown in FIG. 19b (m), the sacrificial substrate 75 is mold-molded in a grinding process until the plane B below the sacrificial substrate 750 and the plane below the mineral copper structure 758 are exited. Next, as shown in Fig. 19b (n), a third layer 770 for forming a conductor for electroplating is formed on the entire lower plane of the sacrificial substrate 75o. The third layer 770 here is composed of a titanium layer with a thickness of 500 angstroms and a copper layer with a thickness of 5,000 angstroms. The copper layer is essentially used as a seed layer for electroplating in the subsequent plating process, and the titanium layer is used to improve the adhesion between the sacrificial substrate 750 and the copper layer. Then, a third photoresist pattern 772 is formed by a lithography process to open a predetermined conductor formed on the plane above the sacrificial substrate 75 °. Next, as shown in FIG. 19c (o), a second conductor 774 is formed on the place where the third photoresist pattern 772 is opened. Here, a conductive material such as nickel (Ni) or an alloy (Ni_c., Ni_w_c.) Is deposited by an electrolytic clock method to form a third conductor π. Then as shown in Figure BWp), the upper plane of the third conductor 774 is flattened by removing the unevenness of the plane above the third conductor 774. The planarization process here is the same as the method disclosed in the first embodiment. After the planarization process is completed, a gold plating process is performed on the entire upper portion of the second conductor 774 to form a second gold plating process.

O: \ 89 \ 89662.DOC -56- 200419159 Layer 776 〇 In the process of forming an ideal electric mine process for forming the third conductor 774, only the case where a conductor is formed in the opening of the third photoresist pattern 772 , Can be omitted for level μ. In addition, in the case where the third conductor 774 is formed by a method other than the electroplating process such as physical vapor deposition and chemical vapor deposition (CVD), the previous process of forming the third layer 770 may be omitted. Then, as shown in FIG. 19c (a), the protection pad 768 is removed by a wet rice engraving process, and the second and third photoresist patterns 762 and 772 are removed at the same time. Here, the second layer 760 and the third layer 770 are also removed. Next, as shown in FIG. 19d (r), fourth and fifth photoresist patterns 778 and 780 are formed by a lithography process to turn on the first and second conductors 764 and π # to form the branch component. Next, as shown in FIG. 19d (s), a thermoplastic epoxide is applied to a portion of the first conductor 774 that is turned on by the fourth photoresist pattern 778. Next, as shown in FIG. 19d (t), a plane above the epoxide 782 is planarized by a polishing process. Next, as shown in FIG. 19d (u), an epoxide layer 784 is formed on the plane above the sacrificial substrate 75 by the same process. Next, as shown in FIG. 19d (v), a plane above the epoxide 784 is planarized by a grinding process. Next, as shown in FIG. 19d (w), the fourth and fifth photoresist patterns 778 and 78o remaining on the upper and lower planes of the sacrificial substrate 750 are simultaneously removed by a wet etching process. Finally, the sacrificial substrate O: \ 89 \ 89662.DOC -57- 200419159 plate 750 is removed by applying an external force on the residual sacrificial substrate 750, and the trench buried material 75 8 is removed by a selective surname process. This completes the probe of the present invention. In other words, 'FIG. 20 illustrates the structure of a probe manufactured by the method shown in FIG. FIG. 20 is a cross-sectional view illustrating a probe formed by using a sacrificial substrate manufactured according to an embodiment of the present invention. As shown in FIG. 20, the dielectric 38 is located in the probe 3, and it seems to be located on the upper and lower planes of the dielectric f at intervals of 敎. At this time, the supporting components 384a and 384b are respectively attached to the conductors 382a and 382b on the upper and lower planes of the dielectric 38. In addition, the thin layers 386a and 386b made of a material having higher conductivity than the conductors 382 & and 3c are located on the outer planes of the conductors 382a and 382] 3, respectively. The trench for forming the dielectric is formed on a predetermined portion of the sacrificial substrate, and the dielectric material is embedded in the trench to form the dielectric 38. The dielectric shell material is preferably ceramic. The profile at both ends of the dielectric can have a stepped profile or an inclined profile. A lithography process is used to form a first protective film on both planes of the dielectric 380, and then a conductive material is deposited on the area opened by the first protective film to form the conductors 382 & and 3821). In addition, a lithography process is used to form the second protective film on the conductors 382a and 382b on the two planes of the sacrificial substrate. Subsequently, the support material is embedded in the area opened by the second protective film to form support components 384a and 384b. In addition, the probe using the single sacrificial substrate manufactured in accordance with the specific embodiment 2-6, and the heart structure are the same as those shown in FIG. Therefore, the detailed description of the probe structure is omitted. Figure 21a is a perspective view and a cross-section illustrating a ceramic plate used in the present invention

O: \ 89 \ 89662.DOC -58- 200419159, wherein the cross section is a parallelogram; Fig. 21b illustrates a perspective view and a cross-sectional view of a ceramic plate used in the present invention. These shapes are suitable for all specific embodiments according to the invention. (First specific embodiment of the probe set) Fig. 22a is a perspective view illustrating a first probe set having a pin for testing a flat panel display according to the present invention; and Fig. 22b is a sectional view thereof. The special structure of the aforementioned probe sheet and its manufacturing method will not be described here. See Figure 22a and 22b. In the probe set according to the first embodiment of the present invention, a plurality of unit structures are attached and fixed to a light-transmitting mold 90m, which are fixed to The lower part of the probe block 904. Here, each unit structure includes a beam member 900 having a detection tip 902 and a connection tip (not shown). The probe and the probe block 904 are attached and fixed to each other with a double-sided tape or an adhesive. The needle block 904 is made of a light-transmissive material such as acrylic to ensure its light-transmittance. In addition, the first interface panel 908 is located above the probe block 904 and is fixed to each other and for the engagement of the latch 904. The second interface panel 910 and the probe holder M] are sequentially located above the first interface panel 908, and are fixed to each other by the engagement of the anchor 914. In addition, the first and second interface panels 908 and 91 are engaged with the fixing bolt 907 to further increase the engaging force therebetween. The second interface panel 910 and the probe are held by 912 and are also resonated by the fixing bolt 911, which further increases the affinity between them. A connecting tip (not shown) at one end of the beam member 900 of the probe sheet

O: \ 89 \ 89662.DOC -59- 200419159 (pictured) is connected to the tape-and-reel package (TCp) 932 via the guide film 930. More specifically, the structure is formed by the configuration of a probe (connection At the tip) on the lower part of the first interface panel 980, and then is formed by the fixing assembly 922 and the anchor flash 924 spraying the needle and the first interface panel. More specifically, the upper closed adhesive component 926 and the lower closed adhesive component 928 made of an insulating ceramic material are inserted between the probe and the first interface panel 8 and between the TCP 932 and the fixed component 922, respectively. In addition, the connection tip 902b of the probe and the TCP 932 are connected to each other via a guide film 93 () between the upper and lower closed adhesive components 926 and 928. In addition, the compression anchor 929 is further located below the fixed component 922, so that the connection tip 902b of the probe and the TCP 932 can be strongly connected to each other through the guide film 932 during the rotation of the anchor 929. together. Further, the probe holder 912 and the manipulator 916 are engaged with each other by the anchor 920. During the test process, the probe holder 912 connected to the manipulators 9 and 6 can be moved up and down by physical force. More specifically, one side of the probe holder 912 and one side of the manipulator 916 mesh with the guide rail 918 so that the first interface panel 908 and the second interface panel connected to the probe holder 912 are engaged. 91 °, and the probe block 904 was able to move up and down for the up and down physical force F during the measurement of private clothing. The spring 92 with a predetermined elasticity of the bucket inch 5 is located around the fixed component 92o that connects the probe holder 912 and the manipulator 916, so that the first interface panel 9 that moves up and down during the test process is the physical force F. 8. The second interface panel 91 and the probe block 904 connected to the probe holder 912 can be obtained by

O: \ 89 \ 89662.DOC -60- 200419159 The spring force of the spring 921 returns to its initial position. In another specific embodiment, as shown in FIG. 23, the aforementioned fixing components on the lower portion of the first solution panel 908 can be omitted. In addition, the probe beam member without the connection tip and TCP 932 is located on the anisotropic conductive film (acF) 935 'and is connected to each other by a compression process and a heating process. Therefore, the flat panel display obtained through a series of processes for manufacturing the flat panel display is fixed to a detection instrument, and the mobile probe block 904 and a predetermined physical force are applied to the flat panel display. Electrode 塾. Perform an electrical test process on a flat panel display. The detection tip 902 located at the bottom of the probe block 904 is in contact with the electrode pad of the flat panel display. The electrical signal input to the detection instrument is applied to the electrode pad of the flat panel display via τ c p 932, the probe beam member and the detection tip 902. G Zhu Needle Group Second Specific Embodiment) Fig. 24a is a perspective view illustrating a second probe set having a vibrating needle for testing a flat panel display according to the present invention; and Fig. 24b is a sectional view thereof. The details of the probe architecture and its manufacturing method will not be repeated. See Figures 24a and 24b. In the second pin set according to the second embodiment of the present invention, a high elastic metal plate 936 made of metal such as stainless steel is used to replace = the first probe set is located at the first A light-transmissive probe block at the lower part of the panel 908. The metal plate 936 is fixed to the lower portion of the first interface plate 908 through the anchor 903, and the probe is fixed to the lower portion of the metal plate 936 with an adhesive through a highly elastic rubber 938. By applying a predetermined physical force F to the electrode pad of the flat panel display

O: \ 89 \ 89662.DOC -61-200419159 During the electrical test process, "the second probe set has an elastic metal plate 936 and a rubber 938 located at the lower portion of the first interface plate 908, so the elasticity can be increased. Third Embodiment of Needle Set) FIG. 25 is a perspective view illustrating a probe set having a probe according to the present invention; FIG. 26 is a sectional view thereof. Referring to FIG. The probe set of the embodiment: 'multiple pins are in a stacked structure. As mentioned above, the multilayer probe includes the conductor of the upper probe and the conductor 950 of the lower probe, but does not overlap each other. One of the ends of each of the conductors of the needle 96 is larger than each conductor, and the exposed portions of the upper and lower conductors are equal in length and have the same electrical and physical properties and conductivity. The attachment-fixation tools such as anchors are used to stack The probes in the structure are fixed to the inclined plane of the probe block 955. The probe block 955 can be made of a light-transmissive material such as acrylic to ensure its light-transmittance. In addition, the first interface panel 965 is located on the probe. Above block 955. The probe holding state 970 is located above the first interface panel 965 and is an anchor 9 The engagement of 67 is fixed together. The first interface panel 965 and the probe holder 970 are engaged by the fixing bolt 967 to further increase the engagement force therebetween. In addition, the 'second interface panel 975 is also fixed by the engagement of the fixing bolt 967 On the back of the probe block 955 on the plane below the first interface panel 965. TCP 972 is attached and fixed on the plane below the second interface panel 975. It is attached and fixed on the inclined plane of the probe block 955 As for the connection between the TCP 972 and the conductors 950 and 960 of the multilayer probe, each conductor of the multilayer probe O: \ 89 \ 89662.DOC -62- 200419159 One of 950 and 960 is formed on the guide film 974 Under the guidance of the hole (not marked with the code), it is connected to the corresponding pattern on TCP 972. In addition, the probe holder 970 and the manipulator 980 are engaged with each other by the anchor 982. During the test process, the physics can be up and down The force F moves the probe holder 970 connected to the manipulator 980 up and down. More specifically, one side of the probe holder 970 and one side of the manipulator 980 are engaged with each other as a guide 984, so that the connection to the probe First interface panel 965 and probe block 955 of the needle holder 970 During the test process, the upper and lower physical forces F move up and down. In particular, a spring 986 with a predetermined elasticity is located around the fixed component 982 that connects the probe holder 970 and the manipulator 980, so that during the test process, the upper and lower physical forces F The first interface panel 965 and the probe block 955 connected to the probe holder 970 up and down by the force F can be restored to their initial positions by the spring force of the spring 986. Therefore, it will be obtained by a series of processes for manufacturing a flat panel display. The flat panel display is fixed on a detection instrument, and is applied to the electrode pad of the flat panel display by a moving probe block 955 of a mobile device and a predetermined physical force. Perform an electrical test process on a flat panel display. At this time, the needle portions 950 and 960 of the multilayer probe located under the probe block 955 are in contact with the electrode pads of the flat panel display. The electrical signal input to the detection instrument is applied to the electrode 塾 of the flat panel display via TCP 972, the probe beam member and the needle portions 950 and 960 of the probe. Industrial Applicability According to the present invention, it is easy to use the tangent sawtooth process and the O: \ 89 \ 89662.DOC -63- 200419159 process for attaching needle conductors to manufacture probes on a cross-linked board made of hard material, which can be reduced. The system for making probes is made in Japan, so meals are served in LL clothing, and thus productivity is increased. In addition, according to the present invention, it is possible to divide & 〆, and divide by Λ T ^ ^ a ° of a number of oxides to adhere to a plurality of conductors to avoid the alignment of the probe accuracy caused by the thermal expansion coefficient and manual operation in the prior art Advantages of the probe. ^ Therefore, it can be high, according to the present invention, a single 'can be used and can reduce the production cost of the probe due to the reduction of the manufacturing process and in addition, can sacrifice the substrate different from the process in the prior art' to reduce the difference in manufacturing process accuracy. The improvement improves the yield, so the advantages are not good, and the process yield and productivity can be improved. Although the present invention and its advantages are limited to the detailed embodiments and accompanying drawings, the present invention is familiar with the changes, substitutions and replacements defined by the scope of patent application. It should be understood that the present invention is not embodied in the foregoing. Those skilled in the art should know that without departing from the spirit and scope of the attached invention, various illustrations can be made. [Simple illustration of the drawings] From the description of the following preferred embodiments and accompanying drawings The above-mentioned and other objects, advantages and features of the present invention will be understood, in which ... FIG. U is a perspective view illustrating a probe for testing a flat panel display and a manufacturing method thereof according to the present invention-specific embodiment; Fig. Lb # wia is a longitudinal sectional view; Fig. Lc is a transverse sectional view of Fig. ^; Figs. 2a and 2b illustrate the manufacturing process of another specific embodiment of the test pin shown in Figs. A perspective view; a picture hole is a longitudinal cross-sectional view of FIG. H; FIG. 2C is a transverse cross-sectional view of FIG. 2a; and FIGS. 3a to 3e illustrate a flat panel display manufactured according to FIGS. 2a to 2c for testing.

O: \ 89 \ 89662.DOC -64- 200419159 perspective view of the manufacturing process of another specific embodiment of the probe; Figure ^ and the legend illustrate the dual test of the flat panel display manufactured according to the MEMS process of the present invention Perspective view of a single-layer probe; Figure 5a is a perspective view illustrating a single-layer probe for testing a flat panel display manufactured according to the MEMS process of the present invention; Figure 5b is a longitudinal sectional view of a figure; Figures 6a to 6p A cross-sectional view illustrating a method of manufacturing a probe for testing a flat panel display according to another embodiment; FIGS. 7a to 7i are cross-sectional views illustrating a method of manufacturing a probe for testing a flat panel display according to another specific embodiment; 8a to 8t are cross-sectional views illustrating a method of manufacturing a probe for testing a flat panel display according to another embodiment; FIG. 9 is a view illustrating a probe for testing a display state of a flat panel according to another embodiment Perspective view of the needle method;

1 〇b is a sectional view;

Perspective view of the probe;

Sections of the method for the probe of the panel display

0: \ 89 \ 89662.D〇C -65- 200419159 囷 16 is a perspective view of a probe manufactured according to the method shown in Figs. 15a to 15e; Figs. 17a to 17c illustrate another embodiment for testing a flat surface. Cross-sectional views of the various processes of the method of the probe of the panel display; FIGS. 18a to 18c are cross-sectional views of the processes of the method of manufacturing the probe for testing the flat-panel display according to another embodiment; FIGS. 19a to 19d are A cross-sectional view illustrating each process of a method for manufacturing a probe for testing a flat panel display according to another embodiment; FIG. 20 is a perspective view of a probe manufactured according to the method shown in FIGS. 1 to 17 (1); Explanation of perspective and cross-sectional views of a ceramic plate used in the present invention, where the cross-section is a parallelogram; FIG. 21b is a perspective and cross-sectional view of a ceramic plate used in the present invention, where the cross-section is a step shape; FIG. 22 illustrates A perspective view of a first probe set having a probe for testing a flat panel display according to the present invention; FIG. 22b is a cross-sectional view thereof; FIG. 23 is a diagram illustrating a tape and reel package (Tcp) shown in FIGS. 22 and 24 and Connection diagram between unit conductor components; Figure 24a is A perspective view of a second probe set having a probe for testing a flat panel display according to the present invention is shown; FIG. 2 is a cross-sectional view thereof, and FIG. 25 is a view illustrating a probe set having a probe according to the present invention. A perspective view, and FIG. 26 are cross-sectional views illustrating a probe set having a probe according to the present invention. [Description of Representative Symbols of the Drawings] Similar Plate-shaped Dielectric Wire Conductors 10, 80 11 2aa 20b, 50 , 284, 286, 302, 312, 360a 360b, 372a, 372b, 412a, 412b, 950, 960

O: \ 89 \ 89662.DOC -66-200419159 30a, 30b, 282, 364, 376a, 376b 40 40a, 40b 60 70 90, 100, 218, 308, 318 9 10 10 110 110 93, 103, 112 95, 105, 114 97a, 97b, 107a, 144, 467, 551, 655, 752 98 108, 118 109, 304, 314, 370a, 370b, 420, 428, 462, 470, 484, 554, 580, 658, 684, 782, 784 116a, 256a, 256b, 334a, 416 120, 200, 250, 330, 400, 450, 550, 650, 750 122, 202, 261 124, 204, 262 126, 206, 260, 336, 408a, 408b 128, 208, 252 129, 210, 254, 332, 402a, 402b, 454, support component conductive material, thin conductive material, plate-shaped support component, gold-plated support plate, first protruding area, central groove, second protruding area, trench under conductor Upper conductor epoxide first trench sacrificial substrate titanium layer copper layer seed layer first photoresist first photoresist pattern O: \ 89 \ 89662.DOC -67- 200419159 552, 664, 756 130, 272, 306, 316 131, 212, 266 132a, 132b, 288 134, 264 136, 210, 265, 338, 410a, 410b, 460, 560 762 138, 148, 282, 378 140, 214 142, 222, 270, 414, 560, 570, 678, 762, 772, 146, 280, 258, 334b, 426, 274 276, 424, 476, 578, 682 278 280 282 300 310 320 322 324a 324b Dielectric plate conductive film alignment key second photoresist second photoresist pattern support plate third photoresist third photoresist pattern adhesive second trench fourth photoresist fourth photoresist pattern third Trench first sacrificial substrate second sacrificial substrate first probe second probe unit conductor beam member detection tip connection tip O: \ 89 \ 89662.DOC -68- 200419159 342 film 370a, 370b, 418, 472, 556, 656, 810, ceramic plate 820 362a, 362b, 370 dielectric 374a, 374b conductive layer 386a, 386b thin layer 404 slot 452, 558, 660, 662, 754 first layer 456, 562, 666, 764 first conductor 458, 564, 668, 766 First gold plating layer 474, 568, 760 Second layer 478, 572, 674, 774 Second conductor 480, 676, 776 Second gold plating layer 482, 578, 582 Fifth photoresist pattern 566 First protection 576, 670 Second protective film 652 Coating material 653 Cutting section 654 Sacrificial substrate block 667, 768 Protective film 758 Copper-plated structure 770 Third layer 774 Third conductor 821, 822 Terminal O: \ 89 \ 89662.DOC- 69- 200419159 900 902 904, 955 907, 911, 967 908, 965 910, 975 912, 970 914, 924, 982 916, 980 918, 984 921, 986 922, 982 926 928 929 930, 974 932, 972 935 936 938 Beam member detection Tip probe block fixing bolt First interface panel Second interface panel probe holder Anchor manipulator Guidance holder Spring fixed component Closed adhesive component Lower closed adhesive component Compression anchor Guide film tape type Encapsulated non-isotropic conductive film metal plate high elastic rubber O: \ 89 \ 89662.DOC -70-

Claims (1)

200419159 Scope of application for patent application, such as L. A probe for testing a flat surface; te-ten-panel display device probe, including a type of plate-shaped dielectric; a plurality of conductors arranged in parallel; and The first wooden trench on at least one of the planes above the dielectric is filled with a plurality of conductors in the dielectric with a predetermined gp. 2. The probe for the Λ1 ^ ^ ten panel display device as described in item 丨 of the patent scope, where the first one with a predetermined area-Wai Xing Di_Da Chu District is located on a plane of the dielectric On both ends, and a Sino-A nail clip groove is located on the plane; and the first canals in the temple's first and first-Chuandi-large exit area are connected to the central groove. For example, a probe used to test a panel display device in the scope of patent application, a primary probe is provided to overlap the probe; and the conductors of the overlapping probes are parallel to each other. 4 · If you apply for the second item in the scope of patent application, you can use it as a probe to put on a flat panel display. The central groove is formed by a dicing process. 5. If the scope of patent application item 1 is used to measure — ^ ten-panel display device probes, where the conductors have sharp ends. For example, the probe for testing the ten-panel display device in the scope of the patent application, wherein the interval between the first trenches on the first protruding areas and the shape on the second protruding areas are small. The difference between O: \ 89 \ 89662.DOC 200419159 is the difference between the two channels. For example, the probe for testing a 卞 甶 panel display 奘 罟 8. in the scope of patent application, wherein the dielectric is made of m material. For example, if the probe is used for testing-flat panel display "in the scope of the patent application, the probe is placed, where the probe further includes-stacking on the interface or on the lower plane. Support the components to fix the first trenches on the dielectric. In and 9. If the probe used for testing in the scope of the patent application, the ten-panel display device, wherein the first channel is formed by a lithography process. 〃, Yiyi Eclipse 10. If the probe used in item 9 of the scope of patent application, + panel display device = each of the __ trenches that have undergone the first etching process have a cross-section pyramid or cross-section cone outer shape ; And 11. wherein the second button engraving process is used to advance each of the first trenches with a cross-section pyramid or a cross-section cone profile to-Yun Yun to-a predetermined depth, and-the bottom of each of these trenches-round Mining process. A probe for testing a flat-panel display device, comprising a plurality of single-piece contact assemblies separately located and fixed on a lower portion of a film at a predetermined interval, wherein the film has a predetermined size, and the units contact t pieces. Each of them includes a beam member with a rod-like shape, and one of the detection tips is located on one end of the beam member in an integrated manner. 12. If O: \ 89 \ 89662.DOC -2-= of a flat panel display device used for testing a flat panel display device in the scope of the patent application, the connecting tip of the middle is located at the other end of the beam member. For example, the patent No. 12-flat probe, where the film is made of an epoxide-. c for the first time to 2y benzene 14 '-a probe used to test a flat panel display device, including: a sacrificial substrate; ^ the first channel formed by the -lithographic process and a more-etched process. using a conduction The film formation process uses a C line on a board to propagate the conductors in the trenches located on the sacrifice base π in the trenches; a first dielectric formed on the conductors; And a second exposed conductor formed by a lithography process and an etching process on a plane below the sacrificial substrate; ... " ——by burying the -media f material into the third channel The second dielectric formed in the trench. 15. The probe for testing a flat panel display device according to item 14 of the application for a patent, wherein the first dielectric is made of an epoxide. For example: Please use item i 4 of the patent scope to test a flat-panel display device. The first dielectric is a ceramic plate adhered to an epoxy resin. A substrate-forming probe includes a class of plate-like dielectrics; and a plurality of conductors, and a plurality of conductor systems are buried in the trenches by a lithography process and an etched conductive material. In the trench, the complex pre-arrangement intervals are located on the upper and lower planes of the dielectric O: \ 89 \ 89662.DOC 200419159, and the conductors formed on the upper plane and the lower planes The conductors formed on a plane are parallel. 18. The probe formed by using a single sacrificial substrate as claimed in item 17 of the patent application scope, wherein the probe further includes a plate-like supporting component stacked on the upper plane or the lower plane of the dielectric to Fix the position of these conductors. 19. 20. A probe formed using a single sacrificial substrate as claimed in item 17 of the patent application, wherein the plurality of conductors are of equal length. For example, a probe formed using a single sacrificial substrate in the scope of patent application No. 19, wherein the conductive systems of equal length formed on the upper plane of the dielectric are toward the side of the dielectric f by a predetermined distance. Offset so that each of the conductors formed on the lower plane of the dielectric has a further stepped-out end compared to each of the conductors formed on the upper plane of the dielectric With further depression at the other end. 21. 22. 23. In item 17 of the Kiss Garden, using a single sacrifice substrate to form a needle ^, both ends of the dielectric have step difference ㈣_ 秘 咖啡 (type, so that the dielectric The searching body formed on the upper and lower planes of the private shell protrudes outward from the dielectric material with equal length. For example, as shown in the probe of the patent scope, the person 2 uses a single sacrificial substrate on the dielectric material. :;: Both ends have a slanted shape, so that these conductors formed on the plane of the human body protrude outward from the length of the Bayi Temple. For example, the use of one-in-one-green needle in the 17th scope of the patent application A ^, a sacrificial substrate is formed early. &Amp; T The conductors formed on the upper plane of the dielectric temporary shell: O: \ 89 \ 89662.DOC -4- 200419159 Between two adjacent conductors formed on the lower plane. 24. A probe formed using a single sacrificial substrate, including: a type of plate-like first dielectric; A step difference is formed on the upper portion of the first dielectric; a plurality of conductors arranged at a predetermined interval to penetrate the first and second dielectrics And, a-conductive material is stacked-a conductive material is stacked on a plane of each of these conductors to form a conductive layer. &Amp; such as a probe using a single sacrificial substrate formed in the scope of patent application No. 24, Wherein, the probe further includes a supporting component stacked on at least one of the upper plane of the first dielectric and the lower plane of the second dielectric. 26. A type formed using a single sacrificial substrate Probes, including: a dielectric formed by stacking $ —Taoyu 4 inverse—above and below an epoxide; formed on the upper and lower planes of the dielectric at a predetermined interval A plurality of conductors; a conductive layer stacked on the plane of each of these conductors by a predetermined plating method; and a stack C1: a supporting component on the upper and lower planes of 4 dielectrics to fix the And the position of the conductor. 27. A probe formed using a single sacrificial substrate, including: a type of plate dielectric; O: \ 89 \ 89662.DOC formed at a pre- $ interval between the dielectric A plurality of conductors on the upper and lower planes; One of the substrates is stacked on each of the conductive layers by a predetermined electroplating method; the upper and lower surfaces of the dielectric are stacked on a support assembly, and the conductors are fixed on the surfaces. A method of manufacturing k-testing a probe of a flat panel display device using 卩, comprising the steps of: forming a first predetermined configuration on a plane, fixing a plurality of at least one trench above and below a dielectric; A first trench forming step, whereby a conductor is formed on the dielectric; and a supporting component forming step of stacking a supporting component on an upper plane or a lower plane of the dielectric, thereby fixing the conductors In the first trenches above. … 29. A method for manufacturing a probe for testing a flat panel display device as claimed in item 28 of the scope of patent application, wherein the method further includes a central groove forming a central groove in a central region of the dielectric A step of forming a first protruding region and a second protruding region on both sides of the dielectric, the first and first protruding regions having a predetermined area; and The first grooves on the second protruding area are connected to the central groove. ° 30 · Please refer to the patent No. 28 for the manufacture of a method for testing a flat panel display as a device probe, in which a primary probe is stacked on the probe O: \ 89 \ 89662.DOC -6 -w, and the conductor of the secondary probe is parallel to the conductor of the probe. • Γ Please manufacture the k-pin method for testing the flat-panel display clothing on the side of item 29, in which the ditch and the central groove are formed by a tangent process. 32 · == Scope Item 29 Manufacturing-A method for testing a flat panel display: The method of placing a vibrating needle, wherein the intervals of the first trenches formed on the -protruding area are cleaned at _ 胄 — J㈣ / The intervals of these trenches formed on a prominent area of the provincial brothers are different. 33. A method for testing a flat-panel display needle as described in the 28th system of the patent application, in which a support component is formed on the upper plane or the lower plane of the dielectric, and is fixed. The conductors are in the first trenches of the dielectric. Electric shell 34 ·· —Produce a method for measuring the call, to build a 14 thousand panel display device, including: 氐 -Conductor forming step, which uses a lithographic process to make a process in a predetermined danger… A thickness of at least one umbrella on the lower plane of one of the single sacrificial substrates is formed. A photoresist pattern with a predetermined thickness is formed on a thousand surfaces to form a conductor. A dielectric formation step uses micro- Shadow to form a photoresist pattern, so as to open the central portion of each illicit conductor, and form a dielectric on each of the open central portions; 疋 OPEN & 乂 步骤 # is formed by -lithography and -etching process,俾 expose the lower plane of each of these conductors; step of forming a support group O: \ 89 \ 89662.DOC 200419159 by embedding-supporting materials in the trenches; and removing the Ending step of the sacrificial substrate. 35. The method of manufacturing a probe for testing a flat panel display device according to item 34 of the patent application, wherein before the conductor forming step, the method further includes a step of sacrifice the substrate. A layer forming step is formed on the upper part. 36. The method of manufacturing a probe for testing a flat panel display 4 device as described in claim 34 of the patent application scope, wherein in the conductor forming step, these are simultaneously formed Conductors and alignment keys, with a specific distance between the alignment keys and the conductors. 37. A method of manufacturing a pin for testing the display of a flat board as an impact, as described in item 34 of the F Ming patent, where In the conductor formation step, a layer of V body 4 such as A is formed, and a layer is formed on an upper part of the sacrificial substrate. 38. Manufacturing as claimed in item 34 of the patent scope-for testing-plane board display of π clothes The method of needle, wherein in the step of forming the dielectric material and the step of forming the supporting component, after the dielectric material and the supporting component are formed, the dielectric material and the supporting component are ground. A method for testing a probe of a flat panel display device includes: a) a film making process and a first and a second etching process to form a substrate having a rounded β ^ _ ° ° Ditches Steps and steps are performed by using a lithographic process to open the central part of the trenches, and then the conductive material is buried and opened to form a conductor; O: \ 89 \ 89662.DOC uses the u W process and _ Formation of dielectric film forming body on the upper part-dielectric, king; each of these conductive material forming steps; and-the completion process of removing the sacrificial substrate. 40. According to the scope of the patent application, a method for testing a probe of a flat device, before the first-channel shape =; before the conductor forming step is shown, after 7 hours, the seed layer is formed. step. 4 Steps include-forming-seed layer gift = method of manufacturing a probe for a measuring device in the scope of the patent No. 37, yo ... The first trenches each have a cross-section gold tower or a cross-section cone shape; wherein the second trench-cut shape or a cross-section shape of each of the first trenches is ^^ predetermined depth by the second name engraving process. And the bottom of each of these first trenches has undergone a rounding process. 42. A method of manufacturing a probe sheet for testing a flat panel display device, comprising the steps of: forming a first protective film pattern on a sacrificial substrate, thereby defining an area forming a tip of a plurality of unit contact components; using The first protective film pattern is a rhyme mask, and a trench is formed on the sacrificial substrate by performing a rhyme engraving process; the first protective film pattern is removed; and on the sacrificial substrate where the first protective film is removed. Forming a second protective film pattern, thereby defining the area of the beam member forming a plurality of unit contact components; O: \ 89 \ 89662.DOC 200419159 forming a second protective film pattern on the sacrificial substrate Metal film to form the bundle members of the unit contact assembly; ^ the bundle members of the unit contact assembly are removed by removing the second diaphragm pattern; 乂 the pre-size will open the bundle members of the unit contact assembly Slicing the sacrificial substrate; placing a thin film of a predetermined size on the sacrifice substrate of the squaring, and attaching and fixing the bundle members of the unit contact assembly to the film On the lower part; and „open the tips of the unit contact assembly by removing the sacrificial substrate at the attachment and fixing film. The instrument is manufactured as described in the patent application No. 42 for testing a flat panel display ' The method of device probe, wherein the first and second protective film patterns are formed by: a step of coating a photoresist on the sacrificial substrate, and a step of exposing and developing the photoresist. A method for manufacturing a probe for testing a flat panel display device as claimed in item 42 of the patent application, wherein the film is made of an epoxide or a parylene. 45. A method using a single sacrifice A method for manufacturing a probe on a substrate includes: a first trench forming step for forming a first trench on a single sacrificial substrate and a lower plane by using a lithography and a surname engraving process, wherein the single sacrificial substrate has A predetermined thickness; a conductor forming step of forming a conductor O: \ 89 \ 89662.DOC 200419159 by embedding a conductive material in the ditch; a utilization-lithography and __ manufacturing process on these conductors Upper shape Steps of forming a second trench in a trench;-a dielectric forming step of forming a dielectric by embedding a conductive material in the second trenches; $ 成 丨; 丨 the sacrifices at the dielectric A supporting component forming step of forming a supporting component on one of the upper and lower planes of the substrate; and / or a step of removing the sacrificial substrate. 46. The use of a single substrate as described in item 45 of the patent application A method of manufacturing a probe, wherein the sacrificial substrate is a silicon wafer. 47. The method of using a single substrate substrate manufacturing-probe as described in item 45 of the patent application, wherein an epoxy is applied to the channels. The dielectric is then formed by inserting and attaching ceramic plates into the first trenches before curing the mounting oxide, wherein the ceramic plates are formed with a dielectric material suitable for being inserted into the trenches. Dimensions are prepared in advance. 48. For example, a single probe substrate is used to manufacture a probe using item 45 in the scope of the patent application, where a ceramic plate is inserted in these trenches, and then a force 2 is attached to the substrate. The dielectric is formed in a gap formed between the trench and the ceramic plates, wherein the ceramic plates are prepared in advance at a size suitable for being inserted into the trenches. 49. The method for manufacturing a probe using a single substrate as described in the scope of the patent application, wherein in the conductor forming step, the layer is formed by forming a layer on the sacrificial substrate and then performing an electrolytic plating process. 〇: \ 89 \ 89662. D〇c • 11- 200419159 and other conductors. 50. The use of item 45 of the scope of patent application-a method for manufacturing a probe with a single sacrificial substrate, wherein the method further includes a step of forming a conductive layer, which uses a plating process to stack a channel A conductive material is selected from A and formed on a plane above the conductors to form a conductive layer. 51 · —A method for manufacturing a probe using a single substrate, including ... forming a first protective film on the single-sacrificial substrate: a first protective film forming step, wherein the single sacrificial substrate has a predetermined thickness Wherein the first protective film pattern is used to form a conductor; the step of forming the conductor on the upper conductor is formed by burying a person in the first protective film pattern in the first protective film pattern; A second protective film forming step of forming a second protective film on the substrate, wherein a support component is formed using the second protective film pattern; a support forming step of forming an upper support component in the second protective film pattern; A trench formation step using a lithography process and an etching process to expose the upper conductor to form trenches on the plane below the sacrificial substrate; formed by embedding a pen material in the trenches A dielectric forming step; and a step of removing the sacrificial substrate. 52. The method for manufacturing a probe using a single substrate as described in item 51 of the scope of patent application, wherein before the step of removing the sacrificial substrate, the method further includes O: \ 89 \ 89662.DOC -12- 200419159 The conductor forming step is performed by forming a third protective film pattern on the dielectric formed in the dielectric forming step, and then burying a conductive material in the third protective film pattern to form the following. A conductor; and after the step of forming the lower conductor, the method further includes a step of forming a supporting member, which forms a fourth protective film pattern on the lower conductor, and then forms a supporting member in the fourth protective film pattern . 53. The method of manufacturing a probe using a single substrate as described in item 51 of the patent application scope, wherein the sacrificial substrate is a silicon wafer. 54. The method of manufacturing a probe using a single substrate as described in item 51 of the scope of patent application, wherein an epoxy is applied to the trenches, and then a ceramic plate is inserted and attached before the epoxy is cured. The dielectric is formed in the first trenches, wherein the ceramic plates are prepared in a size suitable for being inserted into the trenches. • Shi claimed that the method of manufacturing a probe using a single base plate in Item 51 of the patent scope includes inserting a ceramic plate into the trenches, and then applying and attaching an epoxy to the trenches and the trenches. The dielectric is formed while waiting to be formed between ceramic plates, wherein the ceramic plates are prepared in advance at a size suitable for being inserted into the trenches. 56. The method of manufacturing a probe using a single substrate as in item 51 of the scope of patent application, wherein in the conductor forming step, the layer is formed by forming a layer on the sacrificial substrate and then performing an electrolytic plating process And so on. 57. The method for manufacturing a probe using a single substrate as in item 51 of the scope of patent application, wherein the method further includes a step of forming a conductive layer, O: \ 89 \ 89662.DOC -13-200419159 which is a utilization-electroplating Process and stack-conductive material is formed on a plane above the conductors to form a conductive layer. 58. The method for manufacturing a probe using a single sacrificial substrate according to item 51 of the scope of patent application, wherein in the supporting component forming step, a lithography process is used to form a trench, and then a branch material is applied In these trenches, the supporting component is formed. 59 · A method for manufacturing a probe using a single substrate, comprising:-forming a first trench on a predetermined portion of the single-sacrificial substrate, and forming a trench-ditch, wherein the single-sacrificial substrate is Made of a predetermined material and undergoing a polishing process to have a predetermined thickness, wherein the trenches are used to form a dielectric; a dielectric material is embedded in the first trenches to form the A dielectric forming step of a dielectric; a conductor forming step of forming a conductor by forming a protective film pattern on and above a sacrificial substrate where the dielectric is formed, and then embedding a conductive material Patterning the protective film; and a step of removing the sacrificial substrate. 60. The method of claim 59, a method for manufacturing a probe with a single sacrificial substrate, wherein the sacrificial substrate is a silicon wafer. 61. The method of manufacturing a probe using a single wafer substrate according to item 59 of the application, wherein the first trenches are formed by a dry etching process. 62. The method of manufacturing a probe using a single substrate as described in item 59 of the scope of patent application, wherein the first trench is formed using an all-inclusive process. 63 · If the application of the scope of the patent application No. 59-a method of manufacturing a single substrate, O: \ 89 \ 89662.DOC -14- 200419159 needle method, in which the first trench is applied-epoxy 'The connector inserts and attaches the Tao Wan plate in the ditches to form the dielectric before curing the epoxide', wherein the ceramic plates are formed in a manner suitable for being inserted into the first channels. The dimensions in the grooves are prepared in advance. 64. The method of manufacturing a probe using a single-sacrifice substrate as described in the patent application No. 59, wherein a ceramic plate is inserted into these first trenches, and then applied and attached-epoxy The dielectric material forms the dielectric in the gap formed between the first trenches and the ceramics, wherein the ceramic plates are prepared in advance with a size suitable for being inserted into the first trenches. . 65. For example, a method for manufacturing a probe using a single-sacrificial substrate according to item 59 of the scope of patent application, wherein in the conductor forming step, a seed layer is formed on the sacrificial substrate, and then an electrolytic plating process is performed. Forming such conductors. % If the method of applying patent No. 59 for the manufacture of a H-substrate substrate is a probing method, the method further includes-forming on the plane of the upper and lower planes of the sacrificial substrate-forming a supporting component of the supporting component Formation steps. 67. For example, a method for manufacturing a single sacrificial substrate using a single sacrificial substrate according to item 66 of the application, wherein in the supporting component forming step, an epoxide is applied, and then a ceramic plate is attached to the epoxide. On the plane. 68. For example, a method of manufacturing a single substrate with a single substrate, as described in item 66 of the% patent application. In the step of forming the supporting structure, a trench is formed with a lithographic clothing, and then a supporting material is applied to the channels. In the trench, thereby forming the support assembly. O: \ 89 \ 89662.DOC -15- 200419159 69. The method of manufacturing a probe using a single substrate as claimed in item 59 of the patent scope, wherein the method further includes a step of forming a conductive layer. A conductive layer is formed by stacking a conductive material on the upper planes of the conductors in a mining process. 70 · —A method for manufacturing a probe by using a single substrate, including ... A trench forming step of forming a trench with a predetermined depth on a predetermined area on a flat surface of a single sacrificial substrate; The first protective film pattern forming step of forming a first protective film pattern on the sacrificial substrate is used to open the trenches; ^ Buried in Legou buried material where the first protective film pattern is opened: The trench embedding step in the trench, in which the trench embedding material is removed by an etching process; ^ using the 彳 release process on the sacrificial substrate and the lower plane to form # 第 H 和 膜 的 第Two protective film pattern forming steps, wherein the second protective film pattern is used to form a conductor; a conductor forming step of forming a conductor at a specific position defined by the second protective film pattern; The upper and lower flats are each divided into a third protective film pattern forming step of 20% to a third protective film pattern, wherein the third protective film pattern is used to form a support component;;: a specific position defined by the third protective film pattern Shape The step of forming the supporting assembly into the -i supporting assembly; and 2 The ending step of removing the sacrificial substrate separated by the trench buried material and then removing the buried trench trench material. O: \ 89 \ 89662.DOC • 16-71 · A method for manufacturing a probe using a single substrate as described in item 70 of the patent scope. Before forming these conductors, the method further includes the use of grinding The process removes the thinning film patterns formed on the upper plane of the sacrificial substrate and the planarization step of the trench buried material protruding upward from the sacrificial substrate. 72. The method of manufacturing a probe using a single substrate as described in item 70 of the patent application scope, wherein before forming the conductors on the lower plane of the sacrificial substrate in the step of forming the second protective film pattern, the The method further includes a planarization step of removing the sacrificial substrate by a polishing process to expose the dielectric. 73. The application of item 7 () in the scope of patent application-single-method of manufacturing a probe for a substrate, wherein the sacrificial substrate is made of a ceramic material. 74. If the method for manufacturing a probe using a single substrate is used in item 70 of the scope of the patent application, the trenches are formed in the * -tangent process. 75 · The use of the β-patent in Shizhong * for item 7 () — single—a method of manufacturing a probe for a substrate, and the burial material is formed in Langzhong by an electrolyzing process. % The method of manufacturing a probe using a single sacrificial substrate according to item 70 of the patent application, wherein the conductor formation step includes a layer formation step, which is performed on the sacrificial substrate before forming the conductors. A seed layer is formed on the lower plane. ▽ If you ask for the use of the patent scope of the first _ single _ 犠 animal substrate manufacturing, the ten method # 3 Hai method further includes a conductive material stacked conductive layer on each of these conductors on the plane formed step. O: \ 89 \ 89662.DOC -17- 200419159 78. The method of manufacturing a probe using a single substrate as described in item 77 of the scope of patent application, wherein in the conductive layer forming step, a stack is formed by sputtering. The conductive material is on a plane above the conductors. 79. The method of manufacturing a probe using a single substrate as described in claim 70, wherein in the final step, the trench buried material is selectively removed by a wet etching process. O: \ 89 \ 89662.DOC -18-