1278627 18995pif.doc 九、發明說明·· 【發明所屬之技術領域】 本發明是關於一種製造包含感 法、探測卡以及用於檢測探^ 、’之探測卡的方 發明是關於製造包含與檢_==3特定言之，本 探針之過驅動（over drive，〇D)以 ·^便能夠感測 測探針之探測卡的方法、探測卡以 ^圓之平面度的感 統。 用衣板測探測卡之系 【先前技術】 半導體製造過程包含以下一系歹 (sihcon wafer )上配置多個晶片且上矽晶圓 成獨立晶片。為了將所得結構封裝並切並切割 須執行以下過程：將電訊號施加至個 曰片，必 有對應於形成於石夕晶圓上之晶片之接觸構具 檢=。接觸構件與秒晶圓上：= 在下文中被稱為探針。 接％構件 半導體檢義程包含以下操作：在晶_ c 1駕10上安置所要石夕晶圓，使探針尖端與石夕晶圓二 接，接觸，並藉由當用預定之實體力按難針 = 況唬施加至所要接墊來執行所要檢測。 守將弘 此特，必須施加足夠的過驅動（0D 所有探針尖端皆卿晶圓之所要接麵觸。亦 1278¾.oe 維持足夠的〇0以 即時感測〇D > A 防止對接墊之致命損害。此要求用於 廿曰 ㊁前狀態的部件。 亚且必須總保持容罢认i 面度以便使探針*、山置灰曰曰圓夾盤上之矽晶圓的恆定平 墊。因此，t =與相應接墊精密接觸並防止損壞接 部件。 汗發用於即時精確感測矽晶圓之平面度的 【發明内容】 【技術問題】 本發明提供一插制生 探測卡以及用於衣k包含感測探針之探測卡的方法、 檢測半導體裝叙測卡的系統，其中感測探針以用於 獨立形成於f路板的檢嶋針之MEMS方法而 合之半導體裝置之且經組態以感測施加至具有高度整 對於探剛卡之砂 口的探針之過驅動（〇D)並感測相 本發明面度。 法、探測卡以及用、種製造包含感測探針之探測卡的方 於由感測探針感測的3探測卡的系統，所述系統可將關 砍晶圓的平面度之次二之0D以及關於相對於探測卡之 於由感測探針感測的探 。^、、先，所述系統可將關 矽晶圓的平面度之f 以及關於相對於探測卡之 '叫存於諸如PC的終端中以使得下 7 127 聲 -插作員可使用所儲存之qd以及+面度資訊。 【技術解決方案】 本發明之實施例提供製造探測卡的方法 。在所述方法 中，在犧牲基板上形成用於建構電檢測探針之尖端部分以 ， 及平面度感測探針之尖端部分的第一保護圖案 (passivation pattern)，並執行使用第一保護圖案作為蝕 刻遮罩的侧製程以在犧牲基板中形成第一溝槽。移除第 —保缦圖案’亚形成具有暴露第〆溝槽之條型第-開D的 第二保護圖案。在第-開口中提供導電材料以形成分別連 接至檢測以及感測探針之尖端部分的橫桿部分，藉_ 檢測探針錢感_針。檢㈣及制探狀橫桿部分與 多層4路板接合。移除犧牲基板以暴露檢測探針以及 探針。 可形成第二保護圖案以使得第-開口之縱向邊緣與第 一溝槽之一側對準。 在某些貝施例中，在形成檢測以及感測探針之後，所 • 14方法可更包含·形成具有第二開口的第三保護圖案，第 二開口恭4形巧相探針之⑼部分上的所述感測 之橫桿部分；在第二開口中提供導電材料以在感測探針之 尖端部分上形成汛號突出部分；並移除第三保護圖案。 形成第二保護圖案之後，所述錢可更包含使用第二保= 圖案作為钱刻遮罩來飿刻犧牲基板，藉此形成第二溝槽: 在更多實施例中，可形成第二保護圖案以使得在^ 成檢測探針的區域中第—開口之縱向邊緣與第一溝槽之」 8 1278^7.. pi Γ. doc 開口之中心部分。在形成第==中第—溝槽安置於第— 更包含使用第二保護圖案作圖案之後，所述方法可 藉此形成$二賴。鱗綠刻犧牲基板， 在其它實施例中，所述方、本 感測探針之橫桿部分之第三/ V更包含：形成具有暴露 三開口中提供導電材料以形:：：第三保護圖案；並在第 感測探針之橫桿部分。战谷於檢測探針之橫桿部分的 在其它實施例中，檢測樑料、 於多層電路板上之凸塊而與及感測探針可藉由形成 於檢剛探纟+2 4 3包路板接合，且可使對應 在其：==:;於_針之凸塊。 板，形成用於在多層電路板上建，包含.製備多層電路 案；在第三保護圖案中沉積導曾=個凸塊的第三保護圖 成用於選擇性地暴露凸塊的斗，成凸塊；順序形 弟四保護圖案中沉積導電材料:;：弗『保護圖案；並在 在本發明之某些實施凸塊之高度。 製備用於電檢測之檢測探針以及二=卡之方法包含： 針，每—檢測以及感測探針具有停刑面度之感測探 ，之-末端的尖端部分;且;連接至 分與多層電路板接合，其中檢測探針以=探針之 知由形成於多層電路板上的凸相及感測探針 ，檢測探針之凸塊形成為\;二^ i可使用雷射而將感測探針與多層電路板=振針之凸 9 I278®i；d〇c /本發明之更多實施辦，形成探 在犧牲基板均成用於鎌敎檢 ς卡之方法包含： 面度之感測探針，每—檢測以及感 ^及用以感測平 々以及附著至横桿部分的尖端部分；條型橫桿部 多層電路板上對應於制探針之尖層電路板；在 號突出部分；藉由多層電路板上之凸;= 勺位置處形成訊 振針的横桿部分，凸塊高於訊號突\測以及感測 板以暴露檢測探針以及感測探針。刀，亚移除犧牲基 在本發明之更多實施例中，探消]卡包八· 其具有接收外部電訊號之一或多個凸 =·多層電路板， 才木針，其具有條型橫桿部分，條型橫桿部八#支木型檢測 表面與多層電路板之凸塊接合，且尖二之：末端的上 分之另-末端的下表面並經組態以藉由壓力板桿部 片之接墊接觸；以及感測單元，其經組 導體晶 半導體晶片之接墊接觸時感測施加 =測採針與 (〇β)的程度。 杈冽彳木針之過驅動 在某些實施例中，感測單元包含：縣 針，其具有條型橫桿部分，條型橫桿部㈣測探 面與多層電路板之凸塊接合，在條型榉 ^的上表 的上表面上提供訊號突出部分，且尖端!^^另一末端 :之另-末㈣下表面並、独態簡域力而 體曰 丄==觸；以及訊號連接端子，其安置於多層電路j ^ 〇D超出狀程度時感測與訊號突出部分的接觸。 在更多實施例中，感測單元包含：懸臂支架型感測探 10 I278^i(,oc 針，其具有條型橫桿部分，條型橫桿部分 面與多層電路板之凸塊接合，且尖端部末端的上表 之中心部分的下表面並經組態以藉由壓力『了至4灵桿部分 之接墊接觸；以及訊號連接端子，其安置半導體晶片 以當0D超出預定程度時感測與條型=層電路板上 的接觸。 /、 °丨$之另一末端 在其它實施例中，感測單元包含：懸-針，其具有條型橫桿部分，條型橫桿部分 术型感測探 面與多層電路板之凸塊接合，且尖端末端的上表 之另-末端的下表面並經組態以藉由壓^『了至橫桿部分 之接墊接觸；以及訊號連接端子，其二二，半導體晶片 以當㈤超出預定程度喊顺條型橫桿部ί層電路板上 的接觸，其中懸臂支架型感測探針 刀之另一末端 針之橫桿部分。 只彳干邙分厚於檢測探 在其它實施例中，感測單元包含：縣辟 、 針，其具有條型橫桿部分，條型橫桿部感測探 面與多層電路板之凸塊接合，且尖 端的上表 之另-末端的下表面並經組態以藉由厣二『2】杈桿部分 之接墊接觸·’以及訊號連接端子，^置；;2導體晶片 以;“D超出預定程度時與條型橫桿部分： = : = ^其中與檢測探針接合之凸塊厚於與感測探針接合:凸 f其它實施例中’感測單元包含：懸 計，其具有條㈣桿部分，條型橫桿部分之—末端的= 1278紹 5pi「.d〇c 面與多層電路板之凸塊接合，且尖端部分附著至橫桿部分 之另一末端的下表面並經組態以藉由壓力而與半導體晶片 ， 〜接塾接觸，訊號突出部分，其安置於多層電路板上對應 =感測探針之尖端部分的位置處；以及訊號連接端子，其 ， 多層電路板上以當〇D超出預定程度時感測條型橫 才干邛刀之另一末端與訊號突出部分接觸，其中與感測探針 接合之凸塊厚於訊號突出部分。 φ : $在其它實施例中，感測單元安裝於檢測探針附近的多 路板之預定部分處，感測單元包含當0D超出預定二 度日可與半導體測試晶片接觸的接觸感測器（contact ，nsoi )壓力感測為（pressure sensor )或光學感測哭 (optical sensor)。 、 、在本發日狀更多實施例中，探測卡檢_統包含： 測卡’其包含：具有接收外部電訊號之 : 的多層電路板，安置於多層電路板之連接端子上 具^麵桿部分的懸臂支架型檢測探針，條·桿部八 之-末端的上表面與多層電路板之凸塊接合刀 附著至横桿部分之另—末端的下表 之接墊接觸，以及經組二 之鞀声盥箱―Μ 破，並將所感測的or 之权^預疋0D程度比較以控制： 在控制5之控制下控制檢測裝置的操作； 早 早兀，其根據控制器之控制訊號來顯示⑻錢。不 探測卡檢測系統可更包含警報單元（alarming unit)， 其回應於控制器之控制訊號而產生警報訊號。 感測早元包括與檢測探針分離之感測探針。 感測探針可與半導體晶片之虛設接墊接觸。 感測單元可包含接觸感測器、壓力感測器或光學感測 器。 【有利影響】 根據製造包含感測探針之探測卡的方法，感測探針以 用於檢測半導體裝置之檢測接墊的檢測探針之MEMS方 法而獨立形成於電路板上，且經組態以感測施加至具有高 度整合之半導體裝置之矽晶圓的探針之過驅動（0D)並感 測相對於探測卡之石夕晶圓的平面度。因此，可有效執行檢 測過程。 並且，根據藉由上文之方法而製造的探測卡，可將關 於由感測探針感測的探針之0D以及關於相對於探測卡之 矽晶圓的平面度之資訊儲存於諸如PC的監控終端中以使 得下一操作員可使用所儲存之0D以及平面度資訊。因 此，可防止不必要之製造過程以減少製造過程的數目以及 時間。從而可提高製造效率。 【實施方式】 【最佳模式】 在下文關於本發明之實施例的詳細描述中，用於檢測 晶圓上之接墊之狀態的探針通常被稱為檢測探針，且用於 感測檢測接塾期間所產生之過驅動（〇1))或晶圓之平面度 1278627 I8995pif.doc 的探針通常被稱為感測探針。 圖1為根據本發明才旧 〇〇='之探測卡，方 5上。 她由矽材料製成的犧牲基板 層)I序牲基板5上(其上已形成《 侧製程以形成將在=二以及氧化 弟一保護圖案2。 衣私中用作飯刻遮罩的 刻製=二來順序執行物 形成一f應於探針之尖i的=程’藉此在犧牲基板5上 換a之，儘管圖式中 來形成溝槽包含執行刻第—保護圖案2 尖端之-末端部分的潘以形成-對_^^ 程以加深溝槽。 /曰以及執行非等向性乾式蝕刻製 可根據第一保譜同士 的各種形狀形成對二=而以諸如錐形以及錐體 非等向性乾柄财二^之末端部分的淺溝槽。 知之反應式離子_，為堵如被稱為B〇Sh過程的眾所周 深溝刻製程。⑽呢-etd_，咖）過程的 。參看圖丨(d)(C，)執二::式蝕刻製程以移除第-保護 執仃_過如在齡基板5上形成 2 I278627rd〇c 如）銅（Cu )在隨後之電鍍過程中起種子作用的種子層（seed layer) 1 0 〇 參看圖1⑹，將光阻塗覆於所得結構上，並執行暴露 • 以及顯影過程以形成包含具有ϋ案空間（pattern space)之 • $二保護随15,所述圖案空間具有檢測探針以及感測探 針之支撐橫桿的剖面形狀，藉此形成用於藉由隨後之金屬 沉積過程而形成支撐橫桿的圖案空間。 參看圖1 (f)，藉由電鑛將導電材料沉積於經由第二保 護圖案15而暴露的圖案空間中，並執行包含化學機械研磨 (chemical mechanical polishing，CMP)過程、深腐飪過 程（etchback process)以及研磨過程（gdnding pr〇cess) 的平坦化過程以形成檢測抹針20以及感測探針22。因此， 檢測探針20包含橫桿部分20a以及形成於具有橫桿部分 20a之體中的尖端部分20b，且感測探針22包含橫桿部分 22a以及形成於具有橫桿部分22a之體中的尖端部分22匕。 或者，可使用化學氣相沉積（chemical v叩〇r • dep〇siU〇n，CVD)過程或物理氣相沉積（physicai vap〇r deposition，PVD)過程替代電鍍過程而形成檢測探針2〇 以及感測探針22。 參看圖1(g)，第三保護圖案25形成於所得結構上以使 其具有圖案空間，所述圖案空間具有對應於尖端部分孤 之橫^部分22a的部分上表面上的訊號突出部分之剖面形 狀，藉此形成用於藉由隨後之金屬沉積過程而形成訊號突 出部分的空間部分。 15 1278627 18995pif.doc I看圖](h)，藉由# _ 保護圖案25之間的空料沉積於形成於第三 30。 二9邛分中，藉此形成訊號突出部分 參看圖]⑴，執γ、、弓、、 ]5以及第三保護圖案式蝕刻製程以移除第二保護圖案 參看圖I⑴，檢、、、一 分20a以及22a的上則探針20以及22之横桿部 35上的凸塊55以及$知邛分分別與形成於多層電路板 麥看圖l(k)，執行渴口 ， 因此暴露檢測探針2〇、、'、4製程以移除犧牲基板5並 圖2為說明製造圖1及感，探針22,藉此完成探測卡。 此方法中，在犧牲基^ $之抓針之另一方法的剖視圖。在 等向性乾式钱刻製‘二二十順序執行濕式钱刻製程以及非 以及感測探針22牲基板5中形成檢測探針2〇 之體中形成訊號突出部/亍。包鍍過程以在具有感測探針22 相同標號表示與圖]中=&在祂述圖2之實施例中，藉由 關於與圖1中相同之過件’且為簡明起見將省略 參看圖2⑻，執行：圖. 在已形成用於形成探針1⑷中相同的過程以 形成第一保護圖辛15 =大鳊4分之溝槽的犧牲基板5上 有：橫 製程，藉此在犧刻料來執行钱刻 針之板桿IX及尖端^日其中㈣成撿測探 及感測板針之橫桿以及尖端部 16 1278^27 pif.doc 分。 芩看圖2(b)，在犧牲基板5上形成種子声 電鍍將導電材料沉藉於、单 ^ ’且藉由 測探針22知於溝槽中以形成檢測探針μ以及感 /看圖2(c)在已形成檢測探以 的犧牲基板上形成第— 以成1¼針22 述空間部分呈有^；：^又0木25 ’其具有空間部分，所 部分&之部探針22之尖端部分如的橫桿 參看圖2(d)，^的_突出部分之剖面形狀。 保護圖案25之門鍛將導電材料沉積於形成於第： 30。 間的”部分中，藉此形成訊號突出^ 其後，執行盘圖 探針2 G以及感測探(=圖明中相同的過程以將檢測 55以及54接合，藉此完=二多層電路板35上之凸塊 圖3為測卡。 製造之探叫的系統^示^以及圖2中所說明之方法而 參看圖3 - 、思、I©]。 具有接收外部電剛系統包含··多層電路板35，1 凸塊55，其安置^接^多個連接端子4〇以及線A 探針，其每—者具有 4〇上；多個懸臂支架型檢測 尖端部分Μ與與半導體晶片之接塾接觸的 測施加至檢㈣探針2 2的橫桿部分；感測單元，其感 感冽單元包含： ^ ;以及探測卡檢蜊裝置60。 與多層電路极35連^ = 衣針22，其藉由獨立凸塊54而 運接以子4〇接合’·訊號突出部分π， 1278627 1 ^995pi (.doc 其形成於對應於感測探針22之尖 22:之部分上表面上;以及感測訊號連接端^ 於多層電路板35之表面上，其子5 ㈤超出預定程度時將外部電訊號輸出至；^刀3〇以画 預定成至此高度以使得其在㈤超出 僅况下與感測訊號連接端子5〇接觸，且反之亦 探測卡檢測裝置60包含·批生丨印 由感測單元感測之/雜㈣應於 0D程度與預定⑽程度“==且然後將所感測之 驅動單元62，JL在押制哭乂 I制正個糸、统；檢測裝置 置60曰首-二t 1之控制下驅動探測卡檢測裝 。，_不早7L 63 ’其_控制器、 〇D量；以及警報單^ 64，i 虎而顯不 產生警報訊號。 、、工制益61之控制訊號而 操作現將參看圖3詳細描述探測卡以及探測卡檢測系統的 麥看圖3(b)，當藉由一外部實體力按 ^端部分胤以使其與檢測接藝]接觸並施加，卜 —力以使得GD存在於對應於預定間隔㈣第;;夕Μ =’將檢測探針2 0撓曲於預㈣隔d】之範_ =内 感測採針22相對於感測訊號連接端子5〇 匕， 離。因此，藉由由線45連接之感夠 接持―預定距 連接端子4〇而將—低位準電訊 50以及 6〇的控制器61。 木叫卡檢測裝置 I278^Z,,〇c 今有圖3(c) -範圍時，將檢測二 d2的第二範圍。因此，亦將4 弟—範圍之預定間隔 探針2 2並__^體力施加至感測 接觸。因此，藉由線45以及速測訊號連接端子如 訊號:八，卡檢測裝f60:=將-高位準電 前狀態。 ”肩不早兀63向刼作貝顯示當 „亚且’在控制器61之控制下’警報單元64輸出邀報 汛唬以使得其它操作員或管 :報 號可良t久白& 王人了感知i；刖狀悲。警報訊 破T執鳴聲、電子音訊訊號、語音導引訊息或其類似物。 此外，在探測卡之操作期間所產生之〇D感測資訊可 儲存於一儲存單元（未說明）中以便甚至在終止接墊檢測 過程之後仍可利用所述資訊。 【發明模式】 現將詳細描述本發明之其它實施例。 實施例1 在實施例]中，形成感測探針21之橫桿部分21a，使 其長於檢測探針20之横桿部分20a，且在橫桿部分2] a的 下表面上與橫桿部分2] a之末端間隔離開預定距離之一點 處形成尖端部分21b。可以與最佳模式實施例中相同之方 式來感測過驅動（〇D)。在描述實施例]中，藉由相同標 號表示與最佳模式實施例中相同之元件，且為簡明起見將 19 1278627 18995pif.doc 省略關於重疊過程的描述。 、”圖4為根據本發明之另一實施例說明製造包含〇1)感 測棟針之探測卡的方法之剖视圖。 η寥看圖4(a)至圖4(d)，執行與圖](a)至圖1(d)中相同 j程以形成料軸闕Μ端料的_贴已形成 ::的犧牲基板5上形成種子層1〇。參看圖4(e)，在犧牲 二pS:應於横桿部分施以及抑之圖案空 嫌圖安看圖4(f)，藉由電鍍將導電材料沉積於藉由第一保 二】5而恭露的溝槽以及圖案空間中，藉此形成檢測探 尸部^及感測棟針21。因此，建構檢測探針20以包含橫 以及形成於具有撗桿部分20a之末端之體中的 及形成感測探針21以包含橫桿部分21a以 間隔的下表面上與橫桿部分21a之末端 =疋距叙—點處的尖端部分训。 為簡佳模式實施例中的相同，卿 針之之檢測探針以及感測探 製㈣及非等向性乾式 測探針以及制探針。l4Ai在娜基板5巾形成檢 例中::跡且為_=:=佳模式實施 分案空間(其具有橫桿部 及另1案空間（其具有橫桿部分 20 1278627 ⑻ 95pir.doc 21a之剖面形狀）的第一嗜 餘刻製程以及鱗向料H15之後，餐執行濕式 探針2 0以及感測探針^ U王以形成用於形成檢測 剛分21aV丁矣間，感測探針21具有形成於 ί距:Γ :面上與橫捍部分2】吻 顶疋距_之一點處的尖端部分21b。 圖^，藉由電鑛將導電材料沉積於所形成之圖 ;^ 1曰此形成檢測探針20以及感測探針2!。因此， 含横桿部分咖以及形成於具有橫桿 21以勺人;r/而之肢中的尖端部分鳥，並形成感測探針 及形成於橫桿部分21a的下表面 端部trb 端間隔離開預定距離之一點處的尖 納則單元之感測探針21具有橫桿部分2ia以及形 ==〜的下表面上與橫桿部分21a之末端間隔 mr 點處的尖端部分21上以外，藉由圖4以 :—所况明之方法而製造的探測卡實質上相同於最佳 S貫施例的探測卡。因此’為簡明起見，將僅描述感測 感測單兀包含：感測探針21，其藉由凸塊54而盘多 層電路板35之連接端子4G接合，感測探針21包含橫桿部 分21a以及形成於橫桿部分2】_τ表面上與橫桿部分叫 之-個末端間隔離開預定距離之—點處的尖端部分2ib. 以及感測訊號連接端子5G，其安置於多層電路板％的表 面上相對於橫桿部分2] a之側端之凸塊54的位置處以便當 I278627rd〇c 〇D超出預定程度時將電訊號輸出至外界。 具有上文之感測單元的探測卡檢測裝置60相同於最 佳模式實施例之探測卡檢測裝置，且因此為簡明起見將省 略其詳細描述。 圖6為用於使用藉由圖4以及圖5中所說明之方法而 製造之檢測以及感測探針來檢測探測卡之系統的示意圖。 參看圖6，當藉由自外界施加之外部實體力而在檢測 探針20處產生OD時，橫桿部分21a之末端取決於OD之 產生範圍而選擇性地連接至感測訊號連接端子50。回應於 來自感測訊號連接端子50之電訊號，探測卡檢測裝置60 之控制器61以與最佳模式實施例中相同之方式控制檢測 裝置驅動單元62、顯示單元63以及警報單元64。 實施例2 在圖7以及圖8中所說明之實施例2中，形成與檢測 探針20接合之凸塊55，使其高於與感測探針80接合之凸 塊54，並形成感測探針80之橫桿部分80a，使其厚於先前 實施例之橫桿部分◦在描述實施例2中，藉由相同標號表 示與最佳模式實施例中相同之元件，且為簡明起見將省略 關於重疊過程的描述。 參看圖7(a)，製備多層電路板35，且在多層電路板35 上形成具有多個凸塊剖面圖案的第一保護圖案65。 參看圖7(b) ’措由電鑛將導電材料沉積於猎由弟一保 護圖案65而暴露的凸塊剖面圖案中，藉此形成凸塊54以 及55。 22 I278627;d〇c 參看圖7(c)，形成用於選擇性地暴露凸塊55的第二保 護圖案64。 參看圖7(d) ^藉由電鍛將導電材料沉積於藉由苐二保 • 護圖案64而暴露之空間中，藉此增大凸塊55之高度。 — 參看圖7(e)至圖7(g)，以與圖]⑻至圖1(f)中相同之過 程而形成與凸塊54以及55接合之感測探針以及檢測探針。 如上文，藉由蝕刻製程在犧牲基板5中形成具有橫桿 部分20a以及形成於具有橫桿部分20a之一末端之體中的 ® 尖端部分20b的檢測探針20以及具有橫桿部分80a以及形 成於具有橫桿部分80a之一末端之體中的尖端部分80b的 感測探針80。 參看圖7(h)，在橫桿部分80a上形成用於成長橫桿部 分80a的第三保護圖案85。 參看圖7(i)以及圖7G)，藉由電鍍將導電材料沉積於藉 由第二保護圖案8 5而暴露之空間中’藉此僅成長感測探針 8〇之橫桿部分8 0 a ◦ φ 藉由濕式蝕刻製程而移除第一、第二以及第三保護圖 案65、64以及85。 參看圖7(k)，將檢測以及感測探針20以及80之一個 末端部分與形成於多層電路板35上之凸塊55以及54接 合。 參看圖7(1)，移除犧牲基板5以暴露檢測探針20以及 感測探針80。 同時，圖8之實施例不同於圖7之實施例在於檢測探 23 I278627d〇c 針20之橫桿部分2〇a以及感測探 成於犧牲基板5上。 之横椁部分80a形 換言之，以與圖]⑷至圖 有横桿部分2〇a以及形成於具有橫桿=之方法而製造具 體中的尖端部分2〇b的檢測探針2刀2〇a之一末端之 以及形成於具有橫桿部分8如之— 具有横桿部分8如 80b的感測探針80。 而之體中的尖端部分 麥看圖8(a)，在犧牲基板5上 麟針之後，在犧牲基板5上形成成=探針20以及感 80a的保護圖案75。標號15表示用H僅成長横桿部分 及感測探針80的保護圖案。 ^成撿填彳探針20以 參看圖8(b)，藉由電鍍將導電 案75而暴露之空間中 ^匕積於藉由保 分80a。 切顺針80之横桿;; ik後之過程與圖7中之過 將省略其描述。 、问，且因此為簡明起見 外，ίΐΐ?早元不同於最佳模式實施例的感測單元以 所:13以及圖8中所說明之方法而製造的探測卡實 “二=最佳模式實施例之探測卡。因此’為簡明起見 將僅彳曰述感測單元。 80，^矣/2、’如圖9中所說明，感測單元包含：感測探針 路柘、γ、夕、_長之橫桿部分80a並藉由凸塊54而與多層電 其安置於夕接端子40接合；以及感測訊號連接端子50， _八夕t電路板35的表面上相對於橫择部分8〇a之側 24 1278说7— 端之凸塊54的位置處以便各 輸出至外界。"&出預疋程度時將電訊號 具有上文之感測單元的探測卡檢測裝置 佳模式實施例之探測卡檢 4同、取 略其詳細描述。卡“】衣置且因此為簡明起見將省 換言之，當藉由自外界施加之外部實 針20處產生⑻時，橫桿部分_之末端 ，而選擇性地連接至感測訊號連接端子;。:回 自感測訊錢接料5Q之電_，_切潜*置^ 61以與最佳模式實施例中相同的方式控制檢測裝 置驅動黽开6?、骷一口口-， w工巾μ双/只J衣 功早兀W顯不早兀63以及警報單元64。 接人所1實施例3中’形成與檢測探針2〇 塊^的高产。以使其具有不同於與感測探針22接合之凸 之第在多層電路板35上形成用於㈤ J看圖10(b)，藉由電鍍將導電材料沉積於藉由第一保 °又® : 65而暴露之空間中，藉此形成凸塊54以及55。 路;^ς看圖】〇⑷’在其上已形成凸塊55以及54之多層電 64。反5上形成用於選擇性地成長凸塊55的第二保護圖案 ^看圖_’藉由電賴導電材料沉積於藉由第二保 叹㈣杀64而暴露之空間中，藉此僅形成凸塊55。 25 "Spil'.doc: A2786 18' 探針:以與圖1⑷至圖1侧目同之過程而形成撿测 將具㈣桿部分2m形成 I 末端之體中的尖端部分2〇b之檢測探針川 與形成於多層電路板3 5上的凸 柷釗^ 4 2 〇 式餘刻製程而移除犧牲基板5。 口’且然後猎由濕 2二：有:=:==部分 22 35 Ϊ 勺凸鬼54接&。以與用於檢測探針 形成感測探針22。 之以_的方法 ㈣探針2G之橫桿部分咖具有與感測 55 2 瓜相同的厚度。如圖U中所說明，凸塊 54具有不同南度以便使感測探針22之橫桿乂 22a的末端當檢測探針2〇在預定〇D範 D刀 測訊號連接端子50接觸，而當檢測探針2〇 :二感 出預定00範圍時與感測訊號連接端子5〇接觸木。乾超 除了感測單元不同於最佳模式實施例之^測單元以 二=由圖1()中所說明之方法而製造的探測卡實質上 St式實施例的探測卡。因此，為簡明起見將僅描述 感洌單元包含：感測探針22，其藉由 針2〇之凸塊55之高度的凸塊54而與多層電路板35 = 接端子40接合；以及感測訊號連接蠕子5〇，其安置於夕 26 I278^7P1,〇c 層電路板35的表面上相對於橫桿部分22a之側端之凸塊 5 4的位置處以當〇d超出預定程度時將電訊號輸出至外 界0 具有上文之感測單元的探測卡檢測裝置60相同於最 佳模式實施例之探測卡檢測裝置，且因此為簡明起見將省 略其詳細描述。 換言之，當藉由自外界施加之外部實體力而在檢測探 針20處產生OD時，横桿部分22a之末端取決於OD之產 生範圍而選擇性地連接至感測訊號連接端子50。回應於來 自感測訊號連接端子5〇之電訊號，探測卡檢測裝置6〇之 控制器61以與最佳模式實施例中相同的方式控制檢測裝 置驅動單元62、顯示單元63以及警報單元料。 實施例4 、圖]2中所說明的實施例4中，在多層電路板％上形 成訊號突出部分95以便感測探針之〇d。 參看圖]2⑻，製備多層電路板^ 板35上對應於感測探針之尖端部分 在夕曰1 出部? 95，並形成用於形成凸塊的第—保護 芩看圖12(b)’藉由電鍍將導 二、又备木 護圖案65而暴露之空間中，葬 :、'/儿積於藉由第一保 及凸塊54以及55。 域形成訊號突出部分95以 其後，如圖12(c)中所說明地形成 部分95之凸塊插入多層電路板 、1守问衣汛唬犬出 針之橫桿部分之間的第二保護圖測探針以及感測探 1278627 I 8995pii.doc 參看圖I2€d)，p t 護圖案64而是％错由電鍍將導電材料沉積於藉由第二保 54。 a路之空間中，藉此形成成長之凸塊55以及 參看圖1 護圖案65以及料错由濕式蝕刻製程移除第一以及第二保 其後，以與函 探針2 0以及感^菜。圖]⑴中相同之過程而形成檢蜊 參看圖12ΓΠ u 桿部分20a之—太，具有橫桿部分2〇a以及形成於具有横 以及具有橫桿部八^體中的尖端部分的檢測探針20 ^干口^刀22a以及形成於具有橫桿部分22a 端部分22b的感測探針22同時與形树 曰甩路板35上之凸塊55以及54接合。 曰參看圖12(g)，藉由濕式蝕刻製程移除犧牲基板5 ,萨 此暴露檢測探針20以及感測探針22。 曰 ^除了在多層電路板35上形成用於感測探針之〇D的訊 ^出部分以外’藉由圖12中所朗之方法而製造的探測 卡> 賢上相同於最佳模式實施例中之探測卡。 明起見將僅描述感測單元。 芩看圖13，感測單元包含：感測探針22，| Μ而與多層電路板35之連接端子4〇接合;^接 端子％，其安置衫層料板35上職於❹^= 大令而部分22b的位置處；以及訊號突出部分％， 感測訊號連接端子50 i，使其低於凸& 55以及=成表 具有上文之感測單元的探測卡檢測裝置的相同於最 28 1278氣 4模式實施例之探測卡檢測裝置，且因此為簡明起見將省 略其詳細描述。 換言之，當藉由自外界施加之外部實體力而在檢測探 計20處產生〇[)時，橫桿部分22a之末端取決於〇d之產 生範圍而選擇性地連接至與感測訊號連接端子5〇連接的 訊號突出部分95。回應於來自感測訊號連接端子5〇之電 訊號’探測卡檢測裝置60之控制器61以與最佳模式實施 例中相同的方式控制檢測裝置驅動單元62、顯示單元63 以及警報單元64。 上文之實施例的感測探針之每一者經組態以與半導體 晶片之虛設接墊接觸，並可由接觸感測器、壓力感測器或 光學感測器替代感測單元。 圖14說明-實施例，其中將由上文之實施例而製造的 感測探針施加至探測卡。在此實施例巾，將_探針安置 於各種位置處以便感測探針之〇D以及相對於探測卡之 晶圓的平面度。 圓凡㈣頻休对接觸的虛設接墊。參看圖15(1) 以及圖】=將與檢測探針之尖端接觸的檢 = 於晶圓之區域①中，且將與感測文罝 ㈣於晶圓之區域③中，‘;=== 針以及感測探針之探測卡相四配。1按上一/、有榀測才木 換言之，如圖15中所說明，仏 勢1的上部接觸，且感測探針之^針之尖端與檢測接 接觸，因此可感測㈤晶圓之平設接墊2的上部 +面度並將其傳輸至探測卡 29 1278^ 5pif.doc 1278^ 5pif.doc 檢測裝置。 【工業貫用性 ^據本^之㈣卡製造方法、探測卡以及探測卡檢 測乐統可用以檢測半導體裝置。 限定發:月已Γ較佳實?例揭露如上，然其並非用以 .π ^ 壬何热習此技蝥者，在不脫離本發明精 當可作些許之更動與潤飾，因此本發明之保崔 祀圍當視_之”翻範_界定者㈣。 伟。又 【圖式簡單說明】 COD) 製狀探測卡_統之示意圖。中所。兄明之方法而 圖4為根據本發明之另―實 測麟之探測卡的方法之剖視圖。 f包各〇D感 圖5為說明製造圖4之探針 圖6為用於檢測藉由圖心5=視圖。 製造之探測卡㈣統之示意^ 所㈣之方法而 圖7為根據本發明之又—麻 測探，之探測卡的方法的剖視^。…发造包含⑻感 圖8為說明製造圖7 圖9為用於檢測藉由圖7以及圖剖視圖。 製造之探測卡的系統之示意圖。u中所％明之方法而 30 1278%7_c 測探明製造包含。- 圖丨〗為用於檢測藉由圖10中所說明 探測卡㈣統^意圖。 仏料而製造之 測探例說明製造包含⑻感 圖13為用於檢測藉由圖12中所說明^ $ 採測卡的系統之示意圖。 之方法而製造之 圖。圖]4為根據本發明之另一實施顺明如“探針的 口丨5為說明以與探測卡相匹配之 上之接墊以及虛設接墊的圖。 ^而形成於晶圓 【主要元件符號說明】 1 ·檢測接塾 2 :第一保護圖案/虛設接墊 5·犧牲基板 10 ·種子層 15 j第一保護圖案/第二保護圖案 2〇 :檢測探針 =、2]a、22a、_··橫桿部分 b、2】b、22b、8〇b:尖端部分 22、80 ·感測探針 25、85 ·第三保護圖案 30、95 :訊號突出部分 3 1 I278^.r.d〇c 35 :多層電路板 40 :連接端子 45 ··線 5〇：感測訊號連接端子 54、55 :凸塊 60 :探測卡檢測裝置 61 :控制器 62 :檢測裝置驅動單元1278627 18995pif. Doc IX. OBJECT DESCRIPTION OF THE INVENTION [Technical Field] The present invention relates to a method for manufacturing a sensory card, a probe card, and a probe card for detecting a probe, which is related to manufacturing inclusion and inspection _==3 In particular, the overdrive (〇D) of the probe can sense the probe card's probe card and the sensor card's sense of flatness. Measuring the card with a clothing board [Prior Art] The semiconductor manufacturing process includes a plurality of wafers on a sihcon wafer and the upper wafer is formed into a separate wafer. In order to package and cut and cut the resulting structure, the following procedure must be performed: the application of an electrical signal to a die must correspond to the contact formation of the wafer formed on the Shihua wafer. The contact member is on the second wafer: = hereinafter referred to as the probe. The % component semiconductor test process includes the following operations: placing the desired silicon wafer on the crystal _ c 1 drive 10, connecting the probe tip to the Shi Xi wafer, contacting, and pressing by using a predetermined physical force Difficult needle = condition is applied to the desired pad to perform the desired test. Shou will be able to apply enough overdrive (0D all probe tips are the same as the touch surface of the wafer. Also 12783⁄4. Oe maintains enough 〇0 to sense 〇D > A immediately to prevent fatal damage to the mat. This requirement is for parts in the second state. It is necessary to always maintain the surface of the wafer so that the probe* and the mountain are placed on the constant pad of the wafer on the round chuck. Therefore, t = precise contact with the corresponding pads and protection against damage to the components. BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention provides a plug-in probing card and a method for detecting a probe card including a sensing probe, and detecting a semiconductor A system for mounting a card, wherein the sensing probe is coupled to the semiconductor device for a MEMS method for independently forming an inspection pin of the f-plate, and configured to sense to be applied to the height-adjusted card The probe of the sand port is overdriven (〇D) and senses the face of the invention. a method, a probe card, and a system for manufacturing a probe card including a sensing probe, which is a 3 probe card sensed by the sensing probe, and the system can cut the flatness of the wafer 0D and about the probe detected by the sensing probe relative to the probe card. ^, first, the system can store the flatness of the wafer f and the information about the probe card in a terminal such as a PC so that the next 7 127 sound-inserts can use the stored Qd and + face information. [Technical Solution] An embodiment of the present invention provides a method of manufacturing a probe card. In the method, a first passivation pattern for constructing a tip end portion of the electrical detecting probe and a tip end portion of the flatness sensing probe is formed on the sacrificial substrate, and the first protective pattern is used A side process of etching the mask to form a first trench in the sacrificial substrate. The removal of the first - proof pattern 'sub-forms' forms a second protection pattern having a strip-type first-open D exposing the second trench. A conductive material is provided in the first opening to form a crossbar portion that is connected to the tip end portion of the detecting and sensing probe, respectively, by detecting the probe. The inspection (4) and the probe-like crossbar portion are joined to the multi-layer 4-way plate. The sacrificial substrate is removed to expose the detection probe and the probe. A second protective pattern may be formed such that the longitudinal edges of the first opening are aligned with one side of the first groove. In some embodiments, after forming the detection and sensing probes, the method 14 may further include forming a third protection pattern having a second opening, and the second opening is a part of the (9) portion of the probe. The sensing crossbar portion thereon; providing a conductive material in the second opening to form an embossed protruding portion on the tip end portion of the sensing probe; and removing the third protective pattern. After forming the second protection pattern, the money may further include engraving the sacrificial substrate using the second security pattern as a money mask, thereby forming a second trench: In further embodiments, a second protection may be formed The pattern is such that the longitudinal edge of the first opening and the first groove in the region of the detecting probe are 8 1278^7. . Pi Γ. Doc The central part of the opening. After the formation of the first == the groove is disposed at the first and further comprises patterning using the second protective pattern, the method can thereby form a $2. The scaled green engraved sacrificial substrate, in other embodiments, the third/V of the cross-bar portion of the square and the sensing probe further comprises: forming a conductive material provided in the exposed three openings to form a shape::: third protection a pattern; and in the crossbar portion of the first sensing probe. In other embodiments, the detection of the beam material, the bumps on the multilayer circuit board, and the sensing probe can be formed by the detection of the +2 4 3 package. The road plates are joined and can correspond to the bumps of the :==:; The board, formed for building on a multi-layer circuit board, contains. A multilayer circuit is prepared; a third protection pattern for depositing a bump is formed in the third protection pattern to form a bump for selectively exposing the bump, and a bump is formed; and the conductive material is deposited in the sequential protection pattern: ;: "Protection pattern; and at the height of the bumps in some implementations of the invention. A method for preparing a detection probe for electrical detection and a two-card method includes: a needle, a detection probe having a sense of imprisonment, a tip portion of the end; and a connection to the division Multi-layer circuit board bonding, wherein the detecting probe is formed by a convex phase and a sensing probe formed on the multilayer circuit board by the probe, and the bump of the detecting probe is formed as \; Sensing probe and multilayer circuit board = bump of the vibrating needle 9 I278®i; d〇c / more implementations of the invention, forming a method for detecting the Leica in the sacrificial substrate includes: a sensing probe, each detecting and sensing a tip portion for sensing the flat and attaching to the crossbar portion; the strip-shaped cross-section multi-layer circuit board corresponding to the tip layer circuit board of the probe; a protruding portion; formed by a convex portion on the multilayer circuit board; = a portion of the crossbar of the oscillating pin formed at the position of the scoop, the bump being higher than the signal smearing and sensing plate to expose the detecting probe and the sensing probe. Knife, sub-removal sacrificial base In a further embodiment of the invention, the retraction] card pack VIII has one or more of the external electrical signals received by the multi-layer circuit board, the wood needle, which has a strip type The crossbar portion, the strip-shaped cross-bar portion, the eight-wood-type detecting surface is joined to the bump of the multi-layer circuit board, and the tip two is: the upper surface of the upper end of the end is configured to be used by the pressure plate a pad contact of the stem piece; and a sensing unit that senses the degree of application of the test pin and (〇β) when contacted by the pads of the set of conductor semiconductor wafers. Over driving of the eucalyptus needle In some embodiments, the sensing unit comprises: a county needle having a strip-shaped cross-bar portion, and the strip-shaped cross-section (4) probe surface is engaged with the bump of the multilayer circuit board, The upper surface of the upper surface of the strip type 提供^ provides a signal protruding portion, and the tip end! ^^ the other end: the other end (four) lower surface and the unique state of the field and the body 曰丄 == touch; and the signal connection a terminal disposed to sense contact of the signal protruding portion when the multilayer circuit j ^ 〇D is out of shape. In a further embodiment, the sensing unit comprises: a cantilever bracket type sensing probe 10 I278^i (, an oc needle having a strip-shaped cross-bar portion, the strip-shaped cross-section portion being engaged with the bump of the multi-layer circuit board, And the lower surface of the central portion of the upper table at the end of the tip end is configured to be contacted by the pressure to the pad portion of the 4th stem portion; and the signal connection terminal is disposed to mount the semiconductor wafer to sense when the 0D exceeds a predetermined level Measured with strip = layer contact on the board. /, ° 丨 $ the other end In other embodiments, the sensing unit comprises: a suspension-needle with a strip-shaped crossbar portion, a strip-shaped crossbar portion The sensing surface is bonded to the bump of the multilayer circuit board, and the lower surface of the other end of the upper end of the tip end is configured to be contacted by the pad to the crossbar portion; and the signal connection The terminal, the second and second, the semiconductor wafer is in contact with the strip on the circuit board when the (5) exceeds a predetermined degree, wherein the cantilever bracket type sensing probe is at the other end of the crossbar portion of the needle. The dryness is thicker than the detection in other embodiments, the sensing list The element includes: a county, a needle, which has a strip-shaped cross-bar portion, the strip-shaped cross-section sensing surface is joined to the bump of the multi-layer circuit board, and the lower surface of the other end of the upper surface of the tip is configured With the contact of the 『 2 『2 杈 部分 部分 部分 ' ' 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 以及 ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; ; The bumps of the detecting probe are thicker than the sensing probes: convex f In other embodiments, the sensing unit comprises: a suspension having a strip (four) rod portion, and the end of the strip-shaped cross-section portion = 1278 5pi". The d〇c face is bonded to the bump of the multilayer circuit board, and the tip end portion is attached to the lower surface of the other end of the crossbar portion and configured to contact the semiconductor wafer by the pressure, the signal protruding portion, It is disposed on the multi-layer circuit board corresponding to the position of the tip end portion of the sensing probe; and the signal connection terminal, which is used on the multi-layer circuit board to sense the strip type transversely dry boring tool when the 〇D exceeds a predetermined level The end is in contact with the signal protruding portion, wherein the bump engaged with the sensing probe is thicker than the signal protruding portion. φ : $ In other embodiments, the sensing unit is mounted at a predetermined portion of the multiplex plate adjacent the detection probe, and the sensing unit includes a contact sensor that can contact the semiconductor test wafer when the OD exceeds a predetermined second degree ( Contact , nsoi ) Pressure sensor or optical sensor. In the embodiment of the present invention, the detection card includes: a test card comprising: a multi-layer circuit board having an external electrical signal received, disposed on a connection terminal of the multi-layer circuit board; The cantilever bracket type detecting probe of the rod portion, the upper surface of the strip-bar portion eight-end and the bump bonding blade of the multilayer circuit board are attached to the pads of the lower end of the cross-bar portion, and the group is contacted The sound of the second box is broken, and the sense of the right of the sense is compared with the degree of 0D to control: the operation of the detection device is controlled under the control of the control 5; Show (8) money. The non-probe card detection system may further include an alarming unit that generates an alarm signal in response to the controller's control signal. The sensing early element includes a sensing probe that is separated from the detection probe. The sensing probe can be in contact with a dummy pad of the semiconductor wafer. The sensing unit can include a contact sensor, a pressure sensor, or an optical sensor. [Advantageous Impact] According to the method of manufacturing a probe card including a sensing probe, the sensing probe is independently formed on the circuit board by the MEMS method for detecting the detecting probe of the detecting pad of the semiconductor device, and is configured The overdrive (0D) of the probe applied to the germanium wafer with the highly integrated semiconductor device is sensed and the flatness of the wafer relative to the probe card is sensed. Therefore, the detection process can be performed efficiently. And, according to the probe card manufactured by the above method, information about the OD of the probe sensed by the sensing probe and the flatness of the wafer relative to the probe card can be stored in a computer such as a PC. The terminal is monitored so that the next operator can use the stored OD and flatness information. Therefore, unnecessary manufacturing processes can be prevented to reduce the number and time of the manufacturing process. Thereby, the manufacturing efficiency can be improved. [Embodiment] [Best Mode] In the following detailed description of embodiments of the present invention, a probe for detecting the state of a pad on a wafer is generally referred to as a detection probe, and is used for sensing detection. Overdrive (〇1) generated during the interface or wafer flatness 1278627 I8995pif. The probe of doc is often referred to as a sensing probe. BRIEF DESCRIPTION OF THE DRAWINGS Figure 1 is a probe card of the old 〇〇=' according to the present invention, on the side 5. She is made of a sacrificial substrate layer made of tantalum material on the I-sequence substrate 5 (the side process has been formed to form a pattern that will be used as a rice mask in the second and the oxidized brother-protective pattern 2. The second embodiment of the sequential formation of a f should be at the tip of the probe i = 'by the sacrificial substrate 5 on the a, although the pattern to form the groove contains the implementation of the first - protection pattern 2 tip - the end portion of the pan to form a - to - _ ^ ^ process to deepen the trench. / 曰 and the implementation of the anisotropic dry etching system can be formed according to the various shapes of the first spectrum of the same pair of = such as cones and cones The shallow groove of the end portion of the body is an isotropic dry handle. The reaction type ion _ is known as the process of blocking the deep groove engraving process of the process known as B〇Sh. (10) -etd_, coffee) process of. Referring to Figure 丨(d)(C,), the second:: etch process is performed to remove the first-protective _ _ as formed on the aged substrate 5 2 I278627rd 〇c such as copper (Cu) in the subsequent plating process a seed layer that acts as a seed. 1 0 〇 Referring to Figure 1 (6), a photoresist is applied to the resulting structure, and exposure and development processes are performed to form a pattern containing a pattern space. According to 15, the pattern space has a cross-sectional shape of the detecting probe and the supporting crossbar of the sensing probe, thereby forming a pattern space for forming a supporting crossbar by a subsequent metal deposition process. Referring to FIG. 1(f), a conductive material is deposited in a pattern space exposed through the second protective pattern 15 by an electric ore, and a process including a chemical mechanical polishing (CMP) process and a deep rot process (etchback) is performed. The process and the planarization process of the grinding process (gdnding pr〇cess) to form the detecting squeegee 20 and the sensing probe 22. Therefore, the detecting probe 20 includes the crossbar portion 20a and the tip end portion 20b formed in the body having the crossbar portion 20a, and the sensing probe 22 includes the crossbar portion 22a and is formed in the body having the crossbar portion 22a The tip portion 22匕. Alternatively, a chemical vapor deposition (CVD) process or a physicai vap〇r deposition (PVD) process may be used instead of the electroplating process to form the detection probe 2〇 and The probe 22 is sensed. Referring to Fig. 1(g), a third protective pattern 25 is formed on the resultant structure to have a pattern space having a profile corresponding to a signal projection on a portion of the upper surface of the isolated portion 22a of the tip portion. The shape, thereby forming a space portion for forming a signal protruding portion by a subsequent metal deposition process. 15 1278627 18995pif. Doc I sees the figure] (h), which is formed on the third 30 by the deposition of the empty material between the # _ protection patterns 25. In the second 9 minutes, the signal protruding portion is formed by referring to the figure] (1), and the γ, 弓, , , and 5 and the third protective pattern etching processes are performed to remove the second protection pattern. Referring to FIG. 1(1), the inspection, the The upper portions of the probes 20a and 22a, the bumps 55 on the crossbar portion 35 of the probes 20 and 22, and the knowledge points are respectively formed on the multilayer circuit board, and the thirst is performed, so that the exposure detection is performed. The needle 2 〇, ', 4 process is used to remove the sacrificial substrate 5 and FIG. 2 is used to illustrate FIG. 1 and the sensor 22, thereby completing the probe card. In this method, a cross-sectional view of another method of grasping the needle at the sacrificial base. The signal protrusions/亍 are formed in the body of the isotropic dry money engraving ‘two-twist sequential execution wet etch process and the non-sensing and sensing probe 22 substrate forming the detection probe 2 亍. The plating process is shown in the same reference numeral with the sensing probe 22 and in the embodiment of FIG. 2, by the same member as in FIG. 1 and will be omitted for the sake of brevity Referring to Figure 2 (8), the implementation: Figure. On the sacrificial substrate 5 on which the same process for forming the probe 1 (4) has been formed to form the first protective pattern 15 15 = 鳊 4 minute groove, there is a horizontal process, whereby the money is used to perform the engraving of the needle The plate IX and the tip of the day (4) into the sputum and the cross-bar of the sensing plate needle and the tip end portion 16 1278^27 pif. Doc points. Referring to FIG. 2(b), seed acoustic plating is formed on the sacrificial substrate 5, and the conductive material is deposited on the substrate, and is known in the trench by the probe 22 to form the detection probe μ and the sense/view. 2(c) forming a first portion on the sacrificial substrate on which the detection has been formed - in the form of a 11⁄4 pin 22, the space portion is represented by ^;:^ and 0 wood 25' having a space portion, the part & For the cross-section of the tip end portion, see the cross-sectional shape of the protruding portion of Fig. 2(d). The gate forging of the protective pattern 25 deposits a conductive material on the first: 30. In the "part" portion, the signal is formed thereby, and then the disc probe 2G and the sensing probe (= the same process in the figure are used to join the detections 55 and 54), thereby completing the two-layer circuit The bump on the board 35 is a test card. The system for making a probe and the method described in Fig. 2 refer to Fig. 3 -, think, I©]. a multi-layer circuit board 35, 1 bump 55, which is provided with a plurality of connection terminals 4A and a line A probe, each of which has 4 turns; a plurality of cantilever type detection tip portions and semiconductor wafers The contact of the contact is applied to the crossbar portion of the probe (4) probe 2; the sensing unit, the sensing unit includes: ^; and the probe card inspection device 60. Connected to the multilayer circuit pole 35 = pin 11 , which is carried by the independent bumps 54 and joined by the sub- 4 ' '· signal protruding portion π, 1278627 1 ^ 995pi (. The doc is formed on a portion of the upper surface corresponding to the tip 22 of the sensing probe 22; and the sensing signal is connected to the surface of the multilayer circuit board 35, and the external electrical signal is output when the sub 5 (5) exceeds a predetermined level. To the knives 3 〇 预定 预定 预定 预定 预定 预定 画 画 画 画 画 画 画 画 画 画 画 画 画 画 画 画 画 画 画 画 画 ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ ^ Measured/Miscellaneous (4) should be at the 0D degree and the predetermined (10) degree "== and then the sensed drive unit 62, JL is squeezing and crying, and the detection device is set to 60 曰 - 2 Under the control of the drive detection card detection device., _ not 7L 63 'the _ controller, 〇D amount; and the alarm single ^ 64, i tiger does not produce an alarm signal.,, the operation of the control signal of the operation of 61 Referring now to FIG. 3, the probe card and the probe card detection system will be described in detail in FIG. 3(b). When an external body force is pressed to the end portion to contact and apply, the force is applied. So that the GD exists at a corresponding interval (four);; Μ Μ = 'the detection probe 20 is deflected Pre-(four) interval d] _ = inner sensing pin 22 is separated from the sensing signal connecting terminal 5, therefore, by the sense of connection by the line 45 enough to hold the "predetermined distance connecting terminal 4" - Low-level telecom 50 and 6-inch controller 61. Wood card detection device I278^Z,, 〇c Now with Figure 3(c) - range, the second range of two d2 will be detected. Therefore, 4 will also be The range-predetermined interval probe 2 2 and __^ is applied to the sensing contact. Therefore, the line 45 and the quick-test signal are connected to the terminal such as the signal: eight, the card detection device f60:=will be high-level State. "Shoulders are not early 兀63 to 刼 刼 显示 当 „ „ „ „ „ „ 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报 警报The king has a perception of i; sorrowful. The alarm message breaks the T-sound, electronic audio signal, voice guidance message or the like. In addition, the 感D sensing information generated during the operation of the probe card can be stored. In a storage unit (not illustrated) to make use of the information even after terminating the pad detection process. Modes Other embodiments of the present invention will now be described in detail. Embodiment 1 In the embodiment, the crossbar portion 21a of the sensing probe 21 is formed to be longer than the crossbar portion 20a of the detecting probe 20, and is horizontal The tip portion 21b is formed on the lower surface of the rod portion 2] a at a point spaced apart from the end of the crossbar portion 2] a by a predetermined distance. The overdrive can be sensed in the same manner as in the best mode embodiment (〇D) In the description of the embodiments, the same elements as in the best mode embodiment are denoted by the same reference numerals, and for the sake of simplicity, 19 1278627 18995 pif. Doc Omits a description of the overlap process. 4 is a cross-sectional view illustrating a method of manufacturing a probe card including a cymbal 1 sensing probe according to another embodiment of the present invention. η寥 See FIG. 4(a) to FIG. 4(d), and Figure 7 (a) to Figure 1 (d) in the same j process to form the material axis of the end of the material has been formed:: the formation of the seed layer 1 on the sacrificial substrate 5. See Figure 4 (e), at the expense Two pS: should be applied to the crossbar part and the pattern of the empty space to see Figure 4 (f), by plating the conductive material deposited in the trench and pattern space by the first guarantee 2] Thereby, the detecting probe portion and the sensing pin 21 are formed. Therefore, the detecting probe 20 is constructed to include the lateral and the body formed at the end having the mast portion 20a and the sensing probe 21 is formed to include the horizontal The rod portion 21a is on the lower surface of the space and the tip end portion of the crossbar portion 21a at the end point of the crossbar portion 21a. For the same as in the simple mode embodiment, the detection probe and the sensing probe of the needle are as follows. (d) and non-isotropic dry probes and probes. l4Ai in the Na substrate 5 towel formation test:: trace and _ =: = good mode implementation of the division space (which has a crossbar and 1 case a space (portion which has a cross bar 20 1278627 ⑻ 95pir. After the first pico-form process of the cross-sectional shape of doc 21a and the spheroidal material H15, the meal performs the wet probe 20 and the sensing probe to form a test for forming a test score of 21aV. The probe 21 has a tip end portion 21b formed at a point on the LY distance: Γ: face and the 捍 portion 2]. Figure 2, the conductive material is deposited on the formed pattern by the electric ore; the detection probe 20 and the sensing probe 2! are formed. Therefore, the cross-bar portion is formed and the tip portion of the bird formed in the limb having the crossbar 21 in the scoop; and the sensing probe is formed at the end of the lower surface end trb formed on the crossbar portion 21a. The sensing probe 21 of the cusp unit at a point away from the predetermined distance has a crossbar portion 2ia and a lower surface of the shape ==~ on the tip end portion 21 at a point mr from the end of the crossbar portion 21a, The probe card manufactured by the method of Fig. 4 is substantially identical to the probe card of the preferred embodiment. Therefore, for the sake of brevity, only the sensing sensing unit will be described as including: a sensing probe 21 which is joined by the bump 54 and the connection terminal 4G of the disk multilayer circuit board 35, and the sensing probe 21 includes a crossbar The portion 21a and the tip end portion 2ib formed on the surface of the crossbar portion 2__τ at a point spaced apart from the end of the crossbar portion by a predetermined distance. And a sensing signal connection terminal 5G disposed at a position on the surface of the multilayer circuit board % relative to the bump 54 of the side end of the crossbar portion 2] a to output the electrical signal when the I278627rd〇c 〇D exceeds a predetermined level To the outside world. The probe card detecting device 60 having the above sensing unit is identical to the probe card detecting device of the preferred mode embodiment, and thus a detailed description thereof will be omitted for the sake of brevity. Figure 6 is a schematic illustration of a system for detecting a probe card using the detection and sensing probes fabricated by the methods illustrated in Figures 4 and 5. Referring to Fig. 6, when an OD is generated at the detecting probe 20 by an external physical force applied from the outside, the end of the crossbar portion 21a is selectively connected to the sensing signal connecting terminal 50 depending on the range in which the OD is generated. In response to the electrical signal from the sense signal connection terminal 50, the controller 61 of the probe card detecting device 60 controls the detecting device driving unit 62, the display unit 63, and the alarm unit 64 in the same manner as in the best mode embodiment. Embodiment 2 In Embodiment 2 illustrated in FIGS. 7 and 8, a bump 55 bonded to the detecting probe 20 is formed to be higher than the bump 54 bonded to the sensing probe 80, and a sensing is formed. The crossbar portion 80a of the probe 80 is thicker than the crossbar portion of the previous embodiment. In the description of Embodiment 2, the same components as those in the best mode embodiment are denoted by the same reference numerals, and for the sake of brevity, The description about the overlapping process is omitted. Referring to Fig. 7(a), a multilayer circuit board 35 is prepared, and a first protective pattern 65 having a plurality of bump cross-sectional patterns is formed on the multilayer circuit board 35. Referring to Fig. 7(b), the conductive material is deposited in the bump profile pattern exposed by the protective pattern 65, thereby forming bumps 54 and 55. 22 I278627; d〇c Referring to Fig. 7(c), a second protective pattern 64 for selectively exposing the bumps 55 is formed. Referring to Fig. 7(d), the conductive material is deposited in the space exposed by the second protective pattern 64 by electric forging, thereby increasing the height of the bump 55. — Referring to Fig. 7(e) to Fig. 7(g), the sensing probes and the detecting probes joined to the bumps 54 and 55 are formed in the same manner as in Figs. 8(8) to 1(f). As described above, the detecting probe 20 having the crossbar portion 20a and the ® tip end portion 20b formed in the body having one end of the crossbar portion 20a is formed in the sacrificial substrate 5 by the etching process, and has the crossbar portion 80a and is formed The sensing probe 80 is at the tip end portion 80b of the body having one end of the crossbar portion 80a. Referring to Fig. 7(h), a third protective pattern 85 for growing the crossbar portion 80a is formed on the crossbar portion 80a. Referring to FIG. 7(i) and FIG. 7G), a conductive material is deposited in a space exposed by the second protective pattern 85 by electroplating, thereby growing only the cross-bar portion 80 a of the sensing probe 8 ◦ φ The first, second, and third protection patterns 65, 64, and 85 are removed by a wet etching process. Referring to Fig. 7(k), one end portion of the detecting and sensing probes 20 and 80 is joined to the bumps 55 and 54 formed on the multilayer circuit board 35. Referring to Fig. 7(1), the sacrificial substrate 5 is removed to expose the detecting probe 20 and the sensing probe 80. Meanwhile, the embodiment of Fig. 8 differs from the embodiment of Fig. 7 in that the crossbar portion 2〇a of the probe 21 I278627d〇c pin 20 and the sensing are incident on the sacrificial substrate 5. In other words, the cross-sectional portion 80a is in the form of a detecting probe 2 〇a which is formed by the cross-bar portion 2〇a with the figure (4) to the figure and the tip portion 2〇b formed by the method having the cross-bar= One of the ends is formed in a sensing probe 80 having a crossbar portion 8 such as having a crossbar portion 8, such as 80b. In the tip portion of the body, as shown in Fig. 8(a), after the saddle needle on the sacrificial substrate 5, a protective pattern 75 of the probe 20 and the sensor 80a is formed on the sacrificial substrate 5. Reference numeral 15 denotes a protection pattern in which only the crossbar portion and the sensing probe 80 are grown by H. The lens 20 is filled with the probe 20 to refer to Fig. 8(b), and the space exposed by the electroconductive case 75 is immersed in the space by the component 80a. The crossbar of the needle 80 is cut; the process after the ik is the same as that in Fig. 7, and the description thereof will be omitted. , and, therefore, for the sake of brevity, the sensing unit manufactured by the sensing unit of the best mode embodiment is manufactured by the method described in 13 and FIG. 8 "two = best mode" The probe card of the embodiment. Therefore, for the sake of brevity, only the sensing unit will be described. 80, ^ 矣 / 2, ' As illustrated in FIG. 9 , the sensing unit includes: sensing probe path, γ, In the evening, the long cross-bar portion 80a is coupled to the multi-layer electric device by the bump 54 to be disposed at the mating terminal 40; and the sensing signal connecting terminal 50, the surface of the circuit board 35 is opposite to the transverse selection The side 24 1278 of the portion 8〇a is said to be at the position of the bump 54 of the 7-end so as to be output to the outside world. "&> The detection card detecting device having the above-mentioned sensing unit is better when the pre-existing degree is exceeded The detection card of the mode embodiment is the same as that of the detailed description. The card is "clothed" and therefore will be saved for the sake of simplicity, when the (8) is generated by the external solid needle 20 applied from the outside, the crossbar portion The end of _ is selectively connected to the sensing signal connection terminal; : Back to the self-sensing news money to pick up the 5Q power _, _ _ _ _ _ ^ 61 in the same way as in the best mode embodiment to control the detection device to drive open 6?, 骷一口-, w towel The double/J-J function is not early and the alarm unit 64 is displayed. In Example 3, the high yield of the formation and detection probe 2 was obtained. Formed on the multilayer circuit board 35 so that it has a different convexity than the bonding with the sensing probe 22, for (5) J see FIG. 10(b), the conductive material is deposited by electroplating by the first ® : 65 in the exposed space, thereby forming bumps 54 and 55. The road ;(4)' has formed a plurality of layers 64 of bumps 55 and 54 thereon. Forming a second protection pattern for selectively growing the bumps 55 on the reverse 5, which is formed by depositing a conductive material on the space exposed by the second suffix (four) 64, thereby forming only Bump 55. 25 "Spil'. Doc: A2786 18' probe: a test probe formed in the same manner as in Fig. 1 (4) to Fig. 1 to detect the tip end portion 2〇b of the body having the (4) rod portion 2m forming the I end and formed in a plurality of layers The sacrificial substrate 5 is removed by a bump process on the circuit board 35. Mouth 'and then hunt by wet 2 2: There are: =:== part 22 35 Ϊ Spoon convex ghost 54 pick & The sensing probe 22 is formed in conjunction with the probe for detection. The method of _ (4) The cross-bar portion of the probe 2G has the same thickness as the sensing 55 2 melon. As illustrated in Figure U, the bumps 54 have different south degrees so that the ends of the crossbars 22a of the sensing probes 22 are in contact with the detecting probes 2 at the predetermined threshold D-switching signal connection terminals 50. The detecting probe 2 〇 is in contact with the sensing signal connecting terminal 5〇 when the predetermined 00 range is sensed. Dry Super In addition to the sensing unit being different from the best mode embodiment, the detecting card manufactured by the method illustrated in Fig. 1() is substantially a detecting card of the St embodiment. Therefore, for the sake of brevity, only the sensing unit will be described as comprising: a sensing probe 22 that is bonded to the multilayer circuit board 35 = terminal 40 by a bump 54 of the height of the bump 55 of the pin 2; The test signal is connected to the creeper 5〇, which is disposed on the surface of the 2626 I278^7P1, the surface of the 〇c layer circuit board 35 with respect to the side of the side of the crossbar portion 22a, at a position where the 〇d exceeds a predetermined degree. Outputting the Signal to the Outside 0 The probe card detecting device 60 having the above sensing unit is identical to the probe card detecting device of the best mode embodiment, and thus a detailed description thereof will be omitted for the sake of brevity. In other words, when the OD is generated at the detecting probe 20 by the external physical force applied from the outside, the end of the crossbar portion 22a is selectively connected to the sensing signal connecting terminal 50 depending on the range of generation of the OD. In response to the electrical signal from the sense signal connection terminal 5, the controller 61 of the probe card detecting device 6 controls the detecting device driving unit 62, the display unit 63, and the alarm unit in the same manner as in the best mode embodiment. In Embodiment 4, which is illustrated in Fig. 2, a signal projecting portion 95 is formed on the multilayer circuit board % to sense the 〇d of the probe. Referring to Fig. 2(8), a multi-layered circuit board 35 is formed corresponding to the tip end portion of the sensing probe at the 曰 曰 1 exit portion 95, and forms a first protection for forming a bump. See Fig. 12(b)' In the space exposed by the electroplating and the wooden protection pattern 65, the burial:, / / is accumulated by the first retaining bumps 54 and 55. The field forming signal projecting portion 95 is thereafter followed by a second protection between the bumps of the portion 95 formed as shown in FIG. 12(c) and the cross-bar portion of the compliant pin. Graph probe and sensing probe 1278627 I 8995pii. Doc Referring to Figure I2.d), the pt pattern 64 is instead deposited by electroplating with a second material. In the space of the a road, thereby forming the growing bump 55 and referring to FIG. 1 the protective pattern 65 and the material error are removed by the wet etching process, the first and the second protection are followed by the AND probe 20 and the sense dish. Fig. 12(a) shows the same as the process of the rod portion 20a, and has a crossbar portion 2〇a and a detecting probe formed on the tip portion having the lateral direction and the crossbar portion The 20 ^ dry knives 22a and the sensing probes 22 formed on the end portions 22b having the crossbar portions 22a are simultaneously engaged with the bumps 55 and 54 on the tree slab 35. Referring to Fig. 12(g), the sacrificial substrate 5 is removed by a wet etching process to expose the detecting probe 20 and the sensing probe 22. In addition to forming a signal for sensing the 〇D of the probe on the multilayer circuit board 35, the probe card manufactured by the method of FIG. 12 is implemented in the same manner as the best mode. The probe card in the example. For the sake of clarity, only the sensing unit will be described. Referring to FIG. 13, the sensing unit includes: the sensing probe 22, Μ is joined to the connection terminal 4 of the multilayer circuit board 35; the terminal is connected to the terminal, and the slab layer 35 is disposed on the ❹^=large And the position of the portion 22b; and the signal protruding portion %, the sensing signal connecting terminal 50 i is made lower than the convex & 55 and = the same as the detecting card detecting device having the sensing unit above 28 1278 The probe card detecting device of the gas 4 mode embodiment, and thus a detailed description thereof will be omitted for the sake of brevity. In other words, when 〇[) is generated at the detecting probe 20 by the external physical force applied from the outside, the end of the crossbar portion 22a is selectively connected to the sensing signal connecting terminal depending on the range of generation of 〇d 5〇 connected signal highlighting portion 95. The controller 61 in response to the signal detecting card detecting means 60 from the sensing signal connecting terminal 5 controls the detecting device driving unit 62, the display unit 63, and the alarm unit 64 in the same manner as in the best mode embodiment. Each of the sensing probes of the above embodiments are configured to contact a dummy pad of a semiconductor wafer and may be replaced by a touch sensor, a pressure sensor, or an optical sensor. Figure 14 illustrates an embodiment in which a sensing probe fabricated by the above embodiments is applied to a probe card. In this embodiment, the probes are placed at various locations to sense the 〇D of the probe and the flatness of the wafer relative to the probe card. The imaginary pads of the contact (four) frequency break contact. Referring to Figure 15 (1) and Figure = = will be in contact with the tip of the detection probe = in the area 1 of the wafer, and will be compared with the sensing document (4) in the area 3 of the wafer, '; === The probe and the probe card of the sensing probe are matched. 1 Press the previous /, there is a test of wood, in other words, as illustrated in Figure 15, the upper part of the potential 1 is in contact, and the tip of the sensing probe is in contact with the detection, so it can sense (5) the wafer Flatten the upper part + face of the pad 2 and transfer it to the probe card 29 1278^ 5pif. Doc 1278^ 5pif. Doc detection device. [Industrial Applicability] According to the (4) card manufacturing method, the probe card, and the probe card detection system, the semiconductor device can be used to detect the semiconductor device. Limited hair: The month has been better. The example is disclosed above, but it is not used. π ^ 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热 热Brief Description of the Drawings] COD) Schematic diagram of the detection card _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ _ To illustrate the manufacture of the probe of FIG. 4, FIG. 6 is a method for detecting the detection card (4) manufactured by the figure 5 = view. FIG. 7 is a further method according to the present invention. A cross-sectional view of a method of detecting a card. (8) A representation is shown in FIG. 8 to illustrate the manufacture of FIG. 7. FIG. 9 is a schematic diagram of a system for detecting a probe card manufactured by FIG. 7 and a cross-sectional view. The method and 30 1278% 7_c test proved that the manufacture includes - Figure 丨 is used to detect the probe card (4) illustrated by Figure 10. The test case produced by the description shows that the manufacturing includes (8) the sense 13 is A diagram for fabricating a method for detecting a card by the method described in FIG. FIG] Shi Shunming 4 according to another embodiment of the present invention, such as "probe as described in 5 Shu port pads on the card that matches with the probe and the dummy pads of FIG. ^ formed on the wafer [main component symbol description] 1 · detection interface 2: first protection pattern / dummy pad 5 · sacrificial substrate 10 · seed layer 15 j first protection pattern / second protection pattern 2 〇: detection Probe =, 2] a, 22a, _·· crossbar portion b, 2] b, 22b, 8〇b: tip portion 22, 80 · sensing probe 25, 85 · third protection pattern 30, 95: Signal highlighting part 3 1 I278^. r. D〇c 35 : Multi-layer circuit board 40 : Connection terminal 45 ··Line 5〇: Sense signal connection terminal 54, 55 : Bump 60 : Probe card detection device 61 : Controller 62 : Detection device drive unit
63 :顯示單元 64 :警報單元/第二保護圖案 65 :第一保護圖案 75 :保護圖案 dl、d2 :預定間隔 ①、③.晶圓之區域63 : display unit 64 : alarm unit / second protection pattern 65 : first protection pattern 75 : protection pattern dl, d2 : predetermined interval 1, 3, wafer area
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