KR100977289B1 - Probe using semiconductor or display panel device test - Google Patents

Abstract

PURPOSE: A probe used for a semiconductor or a flat display device is provided to improve the electric characteristics of a probe by isolating the interference of an adjacent signal in testing a frequency. CONSTITUTION: A plurality of probe beams(350) supplies an electrical signal to a semiconductor and a flat panel display and are equidistantly arranged. A probe tip(360) is formed at the lower part of both ends of the probe beam and is contacted with the semiconductor and the flat panel display. An insulating body(100) is arranged on a silicon base board to form safe seating space for the plural probe beams and connects the probe beam and the silicon substrate through an electric wiring. A reinforcing plate(600) is arranged on the silicon base board and closes the center of the mounted plural beam.

Description

Probe using semiconductor or display panel device test}

The present invention relates to a probe. Specifically, a probe tip coated with an insulating material may be used to prevent a short circuit caused by contact of adjacent probe tips or to remove noise, and to generate an adjacent signal that may be generated during a frequency signal test. The present invention relates to a probe used for inspecting a semiconductor or a flat panel display device which can improve the electrical characteristics of the probe by blocking interference.

In general, semiconductors, liquid crystal displays (LCDs), plasma display panels (PDPs), and field emission display (FED) flat panel displays have pad electrodes for signal application. do.

The test of the semiconductor and the flat panel display device is performed by using a probe that can determine whether or not a failure by applying an electrical signal to the pad electrode.

Probes for testing flat panel display devices include the needle type, which is manufactured only by hand, the blade type, which is manufactured by hand by introducing new technology, the film type, and the MEMS ( MEMS type using MEMS (Micro Electro Mechanical System) technology.

Needle-type probes include bending a straight tungsten beam, attaching it to the reinforcement plate with adhesive, and matching the coordinate position of the contact surface to be in contact with the pad electrode to be examined and the contact surface to be in contact with the signal transfer device. And physically correcting the position, and cleaning the position-corrected inspection probe.

However, such a series of processes are all made by hand, and thus, it takes a lot of time to manufacture, high defect rate, and also has a limitation that productivity is low due to complicated process.

The blade-type probe is manufactured through a process of manufacturing a frame into which a blade is to be inserted, manufacturing a blade, inserting a blade, and covering a cover on an upper surface of the frame into which the blade is inserted. .

However, some of these processes are still manual, especially at high manufacturing costs.

The MEMS type probe may include fabricating an inspection probe beam and a probe tip, which are conductive materials on an insulator, removing an insulator, covering a protective cover on the inspection probe, and correcting a position of the inspection probe. Produced through a process consisting of steps.

A method of manufacturing a MEMS type probe has been published in Korean Patent Application No. 10-2004-0004540, "Method for Producing a Plate Inspection Device and Probe According to It".

In the method of manufacturing a probe for inspecting a flat panel display device according to Patent Application No. 10-2004-0004540, forming a first protective film pattern defining a shape of a probe on a silicon substrate, and using the first protective film pattern as a mask. Performing an etching process to form a trench, removing the first passivation layer pattern, forming an insulating layer on the silicon substrate, and embedding a conductive material in the trench of the silicon substrate on which the insulating layer is formed. Forming a top surface of the silicon substrate to expose the top surface of the silicon substrate on which the probe is formed; attaching a reinforcement plate that opens one end and the other end of the probe to the top surface of the silicon substrate by defining a central portion of the probe; One end and the other end of the probe are limitedly opened on the opposite side of the silicon substrate to which the reinforcing plate is attached. Forming a second passivation layer pattern, completely exposing one end and the other end of the probe to the outside by removing the silicon substrate opened by the second passivation layer pattern, and removing the second passivation layer pattern Characterized in that made.

Although the center of the conventional probe is composed of an insulator, the probe tip exposed to the outside for inspection has a problem that a conductor may be shorted or noise may be generated due to the contact of adjacent probe tips.

In addition, when testing frequency signals ranging from tens of Hz to hundreds of Hz processed in semiconductors or flat panel devices, which are becoming increasingly high-performance, conventional probes have adjacent signals due to capacitance formed between the probe tips because the conductors of the probe tips are exposed. Due to the interference of the electrical characteristics is deteriorated there is a problem that can not be properly tested.

Accordingly, the present invention has been made to solve the above problems,

SUMMARY OF THE INVENTION An object of the present invention is to inspect a semiconductor or flat panel display device that can prevent short circuits or remove noise by contacting adjacent probe tips by vacuum depositing a polymer insulating material on the entire surface of the probe tip except for a lower portion for transmitting an electrical signal. To provide a probe used for.

In addition, another object of the present invention is to improve the electrical characteristics of the probe by blocking the interference of adjacent signals that may be generated during the frequency signal test by vacuum deposition with a polymer insulating material on the front of the probe tip except the lower portion for transmitting the electrical signal. The present invention provides a probe used for inspecting a semiconductor or flat panel display device.

The present invention for achieving the above object, in the inspection probe used in the inspection equipment for applying an electrical signal to the semiconductor and flat panel display device to inspect the electrical characteristics, the conductive material for applying the electrical signal to the semiconductor and flat panel display device A plurality of probe beams spaced at equal intervals, probe tips contacting the semiconductor and the flat panel display elements at lower ends of the probe beams, respectively, and disposed on an upper surface of a silicon substrate, respectively accommodating the plurality of probe beams A seating space is formed, and an insulator made of a silicon material having electrical wiring for electrically connecting each of the probe beams and the silicon substrate, and a plate-shaped reinforcement plate provided above the insulator so as to close a central portion of the plurality of seated probe beams. It is made, including.

Preferably, the probe beam surface is vacuum deposited with a polymer insulating material.

The probe tip is vacuum-deposited with a polymer insulating material on the front surface of the probe tip except for a lower portion for transmitting an electrical signal.

In addition, the polymer insulating material is provided with a parylene (Parylene) resin.

The probe beam and the probe tip may be made of any one of nickel or nickel alloy.

In addition, the probe beam is attached with an insulating adhesive material to define the central portion.

The probe has a structure in which a test pad including a film and an inspection driving IC for transmitting an electrical signal is attached to a lower portion of a rear surface of the probe beam.

In addition, the probe tip and the probe beam is formed to have a structure that differs in width, width, length, and depth, respectively.

The probe is fastened to a mechanism that is a block that is universally mounted on semiconductor and flat panel display device inspection equipment.

In addition, the probe beams are arranged in an up and down multilayer structure.

As described above, according to the probe used in the semiconductor or flat panel display device inspection according to the present invention, by depositing a vacuum with a polymer insulating material on the entire surface of the probe tip except for the lower end portion for transmitting the electrical signal, it is possible to contact the adjacent probe tip There is an effect that can prevent short circuit or remove noise.

In addition, it is a very useful and effective invention that can improve the electrical characteristics of the probe by blocking the interference of adjacent signals that can be generated during the frequency signal test.

1 is a perspective view showing a probe used for inspecting a semiconductor or flat panel display device according to an embodiment of the present invention;
FIG. 2 is a perspective view illustrating a mechanical part equipped with a probe used for inspecting a semiconductor or flat panel display device according to an exemplary embodiment of the present invention; FIG.
3 is a perspective view showing a test equipment equipped with a probe used for testing a semiconductor or flat panel display device according to an embodiment of the present invention;
4 is a view showing an inspection process of a probe used for inspecting a semiconductor or flat panel display device according to an embodiment of the present invention;
5A through 5O are process perspective views illustrating a method of manufacturing a probe used for inspecting a semiconductor or flat panel display device according to an exemplary embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described with reference to the accompanying drawings.

In addition, the present embodiment is not intended to limit the scope of the present invention, but is presented by way of example only, and various modifications may be made without departing from the technical gist of the present invention.

1 is a perspective view illustrating a probe used for inspecting a semiconductor or a flat panel display device according to an exemplary embodiment of the present invention, and FIG. 2 is a mechanism part equipped with a probe used for inspecting a semiconductor or flat panel display device according to an exemplary embodiment of the present invention. 3 is a perspective view illustrating a test apparatus equipped with a probe used to inspect a semiconductor or a flat panel display device according to an embodiment of the present invention, and FIG. 4 is a semiconductor or flat plate according to an embodiment of the present invention. 5A through 5O are process perspective views illustrating a method of manufacturing a probe used for inspecting a semiconductor or a flat panel display device according to an exemplary embodiment of the present invention.

Referring to FIG. 1, a probe used for inspecting a semiconductor or a flat panel display device according to the present invention includes a probe beam 350 provided with a plurality of equally spaced conductive materials for applying an electrical signal to the semiconductor and the flat panel display device, and the probe. The probe tip 360 is formed below the side end of the beam 350 to contact the semiconductor and flat panel display device, and a seating space of the probe beam 350 is formed on the silicon substrate. It includes an insulator 100 made of a silicon material consisting of a connected electrical wiring, and a plate-shaped reinforcement plate 600 attached to the upper center of the insulator 100.

Here, in order to prevent electrical characteristics from deteriorating due to noise and mutual interference of adjacent signals due to the narrow spacing of the spaced probe beams 350, the bottom of each surface of the probe beams 350 and an electrical signal are transmitted. A polymer insulating material is deposited on the entire surface of the probe tip 360 except for the portion.

Here, the probe beam 350 and the probe tip 360 form an insulating material on the surface by a vacuum deposition method using a parylene resin that is easy to vacuum deposition.

The probe beam 350 and the probe tip 360 use various nickel alloy materials such as nickel (Ni) and nickel iron (Ni-Fe) in consideration of electrical conductivity and elasticity.

In this case, the probe beam 350 may be formed in an up and down multilayer structure for arranging more probe beams than in the prior art in order to improve inspection efficiency.

Here, the probe tip 360 and the probe beam 350 are formed to have a structure that differs in width, width, length, and depth, respectively.

The probe tip 360 is deposited with a polymer insulating material on the front surface except for a lower portion that transmits an electrical signal, and the probe beam 350 is attached with an insulating material to define a central portion, thereby improving the insulating property to reduce noise. It is completely removed and may be configured so that a short circuit does not occur even when the probe beams 350 contact each other.

Also, referring to FIGS. 2 and 3, the probe is formed in a structure in which a test pad 750 including a film and an inspection driving IC for transmitting an electrical signal is attached to a lower back side of the probe beam 350.

In addition, by forming a protruding pin at the rear end of the probe beam 350 having a tip, it is easily configured to be detached from the test pad 750.

That is, to facilitate separation from the test pad 750 including the test driver IC, a protruding pin is formed at the bottom of the rear side of the probe, and the test pad 750 in which the electrical signal transmission probe is connected to the test driver IC is located behind the probe. Probe guide film that delivers electrical signal for safe contact with stage and test driver IC.

Here, the probe is configured to be fastened to the mechanism 700 which is a block which is mounted universally on the semiconductor and flat panel display device inspection equipment 800.

The instrument part 700 to which the probe is fastened is modularized and mounted on the probe inspection device 800.

A plurality of probes are provided in the inspection apparatus 800, and each probe is formed with a probe beam 350 having the probe tip 360 contacting the semiconductor and the flat panel display device, as shown in FIG. The group is made to contact and inspect the panel under test.

5A through 5O are process perspective views illustrating a method of manufacturing a probe used for inspecting a semiconductor or flat panel display device according to an exemplary embodiment of the present invention.

Hereinafter, a method of manufacturing a semiconductor and a flat panel display inspection probe according to an embodiment of the present invention will be described with reference to the drawings.

First, as shown in FIG. 5A, an insulator 100 on which a probe beam 350 is mounted is formed on a silicon substrate that is not deformable, such as temperature and humidity.

Next, as shown in FIG. 5B, a first passivation layer 110 is formed in a gap under the insulator 100.

The first passivation layer 110 is coated with a polyamide photoresist on a lower portion of the insulator 100 to a predetermined thickness, and then exposed to light and developed, thereby performing a probe beam on one unit probe by performing a subsequent process. It is formed through a photolithography process that forms a gap to define a location where the 350 is exposed.

In this case, the photolithography process includes photoresist coating, photoresist soft-baking, exposure, photoresist hard-baking, and rinsing. Rinse) can be formed by sequentially performing the process.

Next, as shown in FIG. 5C, the probe beam exposed portion 115 is etched to form a portion of the lower portion of the insulator 100 where the first protective layer 110 is not formed.

At this time, the probe beam exposure unit 115 is a sand blast process, which is a part of the physical etching process is masked by the first protective layer, the remaining area other than the portion to be removed to remove the selective insulator 100 on the back of the insulator 100 It is formed by removing only the insulator 100 at a thickness of several tens of micrometers.

Next, as shown in FIG. 5D, the first passivation layer 110 may be removed, where the first passivation layer 110 may be removed by wet etching using a chemical such as acetone (CH 3 COCH 3).

Next, as shown in FIG. 5E, a second passivation layer 120 is formed on the insulator 100 to define the shape of the probe tips 360 arranged at equal intervals.

Here, the second passivation layer 120 is formed by a photolithography process similar to the process of forming the first passivation layer 110.

Next, as shown in FIG. 5F, the groove 200 corresponding to the shape of the probe tip 360 is formed by using the second passivation layer 120 as a mask, and the etching process is performed on the machine. It is formed by a dry etching process.

Subsequently, as shown in FIG. 5G, the second passivation layer 120 is removed by wet etching using chemicals.

Next, as illustrated in FIG. 5H, an insulating layer 250 is formed by applying a silicon dioxide layer, which is an insulating material forming an oxide layer, on the insulator 100.

The insulating film 250 is formed to electrically insulate the probe beam 350 formed in the insulator 100, and the insulating film 250 injects a predetermined oxidizing gas into the furnace. It may be formed by inducing an oxidizing gas and the upper surface of the insulator 100 to react at a predetermined high temperature.

Here, the silicon oxide film is formed using the insulating film 250, but in another embodiment, the insulating film 250 may be formed using a nitride layer.

Next, as shown in FIG. 5I, after forming the third passivation layer 300 defining the lower end of the probe beam 350 on the insulator 100 coated with the insulating material, the third passivation layer 300 is masked. By performing a physical etching process, the trench 310 is formed by removing the insulating layer 250 in a shape corresponding to the lower end of the probe tip 360.

Here, the trench 310 may be formed so that the unit probe beams 350 may be spaced apart from each other by a predetermined interval, and the trench 310 may be formed by applying a leading material to the front surface after the physical dry etching process. .

Here, the probe beam 350 may form the trench 310 in a plurality of layers so that the upper and lower multilayer structures are arranged.

Subsequently, the third passivation layer 300 is removed by wet etching using a chemical such as acetone (CH 3 COCH 3).

 Next, as illustrated in FIG. 5J, a conductive material is formed in the trench 310 of the insulator 100 having the silicon oxide layer formed thereon as the insulating film 250 to form the probe beam 350 on the insulator 100. To form a plating mold 330 for embedding by the electroplating process.

The plating mold 330 may be formed by coating a photoresist made of polyamide to a predetermined thickness on the trench 310.

Next, as shown in Figure 5k, by applying a conductive material on the plating frame 330 to form an electroplating seed layer 400.

In this case, the seed layer 400 may be formed of a copper (Cu) layer by a sputtering process as a physical vapor deposition (PVD) method.

Subsequently, as shown in FIG. 5L, after the nickel-iron alloy, which is a conductive material, is embedded in the trench 310 in which the seed layer 400 is formed, the upper surface of the insulator 100 is flattened. Thereafter, the plating frame 330 is removed to form a probe beam 350 that forms a probe group with unit probes spaced a predetermined distance apart.

The probe beam 350 is not limited to the nickel-cobalt alloy material of the present embodiment in consideration of electrical conductivity and elasticity, and may be modified to various materials such as nickel and nickel iron alloys (Ni-Fe).

In addition, the planarization process may use techniques such as grinding and chemical mechanical polishing (CMP).

Next, as shown in FIG. 5M, the electroplating seed layer 400 is removed to form electrical wiring on the probe beam 350, and then the insulating polymer is formed on the probe beam 350 and the probe tip surface. The insulating material is formed by vacuum deposition.

In this case, the probe tip 360 is deposited on a portion other than a lower portion for transmitting an electrical signal. As the insulating material, a parylene resin that is easily vacuum deposited is used.

Next, as illustrated in FIG. 5N, a fourth passivation layer 450 is formed to define a central portion of the group of probe beams 350 formed with the electrical signal transmission system having the insulated probe tip 360. The reinforcing plate 600 is attached to the center portion of the limited probe beam 350 using the fourth passivation layer 450 as a mask.

Here, the reinforcement plate 600 is formed to open one end and the other end of the probe by closing only the central portion of the probe beam 350 assembly with a ceramic material, the adhesive of an insulating material such as epoxy It is attached and fixed to the upper portion of the insulator 100 by using.

Subsequently, after the reinforcing plate 600 is attached, the fourth protective layer 450 is removed by wet etching.

Next, as shown in FIG. 5O, a fifth passivation layer 500 for defining a central portion of the lower portion of the insulator 100 is formed, and the insulator is formed through an etching process using the fifth passivation layer 500 as a mask. Except for the center portion of the (100) through to expose the other portion to the outside to produce a probe.

In this case, the fifth passivation layer 500 is formed by coating a photoresist to a predetermined thickness by a photolithography process, exposing and developing the photoresist, and confining and closing only the central portion of the probe in the same manner as the reinforcement plate 600. Form a pattern to open one end and the other end of the.

In addition, the exposed portion except for the center portion of the insulator 100 may be completely removed by using a dry etching process such as a sandblast process by using the fifth passivation layer 500 as a mask.

At this time, one end and the other end of the probe beam 350 is completely opened by the etching removal of the insulator 100, and the probe 20 fixed by the insulator 100 is completed.

In addition, the probe beam 350 is buried and fixed in the trench 310, and the probe and the insulator 100 are insulated from each other by an insulating film 250 made of a silicon oxide film, and each unit probe beam ( 350 is also insulated with an insulating material such as polyamide.

Thereafter, the fifth passivation layer 500 is removed by the same method as that of removing the first to fourth passivation layers 450.

The terms used in the above description and claims are not to be construed in a dictionary sense, and the inventors can properly define the concept of terms in order to explain their invention in the best way. Therefore, it should be interpreted as meaning and concept corresponding to the technical idea of the present invention.

Accordingly, the shapes and configurations shown in the drawings as well as the embodiments described herein do not represent all of the technical ideas of the present invention, and various equivalents may be substituted for them at the time of filing of the present invention. It should be understood that variations may exist.

100: insulator 110: first protective film
120: second protective film 250: insulating film
300: third protective film 310: trench
320: plating frame 350: probe beam
360: probe tip 400: seed layer
450: fourth protective film 500: fifth protective film
600: reinforcement plate 700: inspection pad
750: mechanism 800: inspection equipment

Claims (10)

In the inspection probe used in the inspection equipment for inspecting the electrical characteristics by applying an electrical signal to the semiconductor and flat panel display device,
A plurality of probe beams which are conductive materials for applying electrical signals to the semiconductor and flat panel display devices, and are spaced at equal intervals;
Probe tips respectively formed under both ends of the probe beam and in contact with the semiconductor and flat panel display elements;
An insulator made of a silicon material disposed on an upper surface of a silicon substrate, wherein a seating space for receiving the plurality of probe beams is formed, the insulator having an electrical wiring electrically connecting the probe beams to the silicon substrate; And
It includes a plate-shaped reinforcement plate provided on the insulator to close the central portion of the plurality of seated probe beams,
The probe beam is formed by coating a silicon oxide film, which is an insulating material forming an oxide film, on the insulator, forming an insulating film, and forming a protective film defining a lower portion of the probe beam on the insulator on which the insulating film is formed. Forming a trench in a shape corresponding to the lower end of the probe tip, forming a plating mold for embedding the conductive material in the trench by an electroplating process, and coating the conductive material on the plating mold to electroplat the seed layer. After forming a buried nickel alloy of a conductive material in the trench in which the seed layer is formed, and then through the process of planarizing the upper surface to expose the insulator,
The probe beam is vacuum deposited with a polymer insulating material to the surface after the electrical wiring is formed,
The probe tip is vacuum-deposited with a polymer insulating material on the front surface except for a lower portion for transmitting an electrical signal,
The polymer insulating material is provided with a parylene resin,
The probe beam and the probe tip are made of any one of nickel or nickel alloy material,
The probe beam is attached with an insulating adhesive material to define the center portion,
The probe has a structure in which a test pad including a film and an inspection driver IC for transmitting an electrical signal to a lower portion of a rear surface of the probe beam is attached,
Protruding pins are formed at the lower rear side of the probe,
The probe tip and the probe beam is formed to have a structure that differs in width and width, length and depth, respectively,
The probe is fastened to a mechanism that is a block that is universally mounted on semiconductor and flat panel display device inspection equipment,
The probe beam is used in the inspection of the semiconductor or flat panel display device characterized in that the array is formed in a vertical structure. delete delete delete delete delete delete delete delete delete

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