KR101006351B1 - method of manufacturing the Electric conduction pin - Google Patents

Abstract

The present invention relates to manufacturing the conductive pin structure during the manufacturing process of the conductive pin shape by two-dimensional patterning using the LIGA process and the MEMS process without deformation of the conductive pin generated at the time of separation from the sacrificial substrate. For example, the horizontal array bridge and the vertical array bridge are added to the conductive pin structure array unit, and only the outer ring portion and the inner ring portion connected to the conductive pin structure array are separated from the sacrificial substrate while only the outer ring portion and the inner ring portion are bonded to the sacrificial substrate. In this case, the conductive pins do not deform during cleaning.

Conductive pin, outer ring part, inner ring part, horizontal array bridge, vertical array bridge

Description

{Method of manufacturing the Electric conduction pin}

The present invention relates to the manufacture of conductive pins for semiconductor chip inspection, wherein the conductive pins are formed by two-dimensional patterning by the LIGA process and the MEMS process, and only the conductive pin structure ring portion is bonded to the sacrificial substrate. It is to be bonded so that there is no deformation during separation and cleaning after separating the conductive pin structure from the sacrificial substrate.

The conductive pins assembled on the probe head (electric conductor) of the probe card can be used as blade tips by processing metal sheets, or the photolithography, plating process, molding process and MEMS (Mirco Electric Mechanical System), which are LIGA (LIthographie Galvanoformung Abformung) processes. The process of CVD process, lithography process, etching process, planarization process (CMP), separation and residue cleaning process is used to produce fine and uniform shape of the conductive pins by two-dimensional patterning without deformation.

It is an object of the present invention to fabricate an electrically conductive pin shape by two-dimensional patterning on a conventional sacrificial substrate. There is a problem of polishing with poor.

As shown in FIGS. 1A and 1B, when the final completed array of conductive pin structures is removed from the sacrificial substrate or when the separated conductive pins are cleaned by the cleaning liquid, the conductive pin structure arrays are entangled with each other due to thin thickness of the conductive pins. Deformation occurs when the cleaning solution is attacked by ultrasonic waves.

In addition, the deformation is a problem that can not completely remove the photoresist and organic matter remaining in the conductive pins.

An object of the present invention is to eliminate the entanglement between the conductive pin array unit generated when the conductive pin is separated from the sacrificial substrate during the manufacturing process of the conductive pin.

Still another object of the present invention is to remove the conductive pins manufactured on the sacrificial substrate of 6 inches or more from the sacrificial substrate. During the attack of the cleaning agent, the conductive pin is twisted and deformation occurs.

The conductive pins cannot be used when the conductive pin array units are entangled with each other when they are separated from the sacrificial substrate, or when the conductive pins separated from the sacrificial substrate are subjected to an attack by the cleaning liquid during ultrasonic cleaning and deformed. Cleaning may remove organic matter remaining in the conductive pins. Unremoved organics cannot be used as good quality conductive pins, and the problem is that the manufacturing cost of the conductive pins is high due to the reduced yield of the conductive pins.

Moreover, the array of conductive pin structures manufactured on 8-inch, 12-inch or larger sacrificial substrates has many array unit structures, so that the entire conductive pin structure is separated from the sacrificial substrate or the conductive pin deformation is largely generated when cleaning. I can't get a conductive pin

In addition, when the conductive pin having a thickness of 20 μm is manufactured, the conductive pin is strongly deformed by the cleaning solution when the entire conductive pin structure is separated from the sacrificial substrate. The electrically conductive pins, which are manufactured separately, cannot completely remove the remaining grape resist, sacrificial layer, conductive layer, and organic material during the manufacturing process.

According to an embodiment of the present invention, the outer ring portion and the intermediate ring portion and the inner ring portion are added to the array of conductive pin structures manufactured on the sacrificial substrate of 6 inch, 8 inch, 12 inch or more, and the outer ring portion of the array of conductive pin structures on the sacrificial substrate. Manufactured with the middle ring part and the inner ring part bonded to each other, only the outer ring part, the middle ring part and the inner ring part are bonded to the sacrificial substrate, and the entire conductive pin structure array is separated from the sacrificial substrate. The inspection is easy and the individual conductive pins of the good can be easily selected.

In addition, by connecting connecting bridges to the horizontal array and the vertical array to the conductive pin structure array unit, it is possible to stably polish during the planarization process and to prevent entanglement when separating the conductive pins from the sacrificial substrate.

The conductive pins by two-dimensional patterning process the conductive pins by manual or semi-insert manufacturing method, so that the bad pins and good quality conductive pins can be easily selected and inserted into the probe head quickly.

The adhesion of the ring to the sacrificial substrate, the horizontal array and the vertical array can completely remove the organic matters remaining without deformation on the conductive pins when the conductive pins are cleaned by two-dimensional patterning using ultrasonic cleaning. .

The present invention is a deformation caused by tangling the conductive pin array unit when separating the conductive pin structure array from the sacrificial substrate by adding a bridge to the array and the vertical array array of the conductive pin structure array manufactured on a sacrificial substrate of 6 inches or more In this case, the thickness of the conductive pin structure planarization polishing process is uniform.

In addition, only the ring part connected to the conductive pin structure array is adhered to the sacrificial substrate, and only the conductive pin structure array is separated so that organic matters remaining on the conductive pins can be completely removed without any deformation in the conductive pins. In addition, the outer ring portion of the conductive pin structure array on the sacrificial substrate is bonded to the sacrificial substrate to facilitate the inspection of bad pins, and it is a useful invention that can easily separate and separate the individual good quality electrical conductive pins and assemble the electrical conductors.

Specific effects obtained from the embodiment of the present invention and the conductive pin manufacturing method, etc. will be described in detail with reference to the accompanying drawings.

Example 1

As shown in FIG. 2, the outer ring portion 11 is added to the conductive pin structure array 50 manufactured from the 6-inch sacrificial substrate, thereby bonding only the outer ring portion 11 of the conductive pin structure array 50 to the sacrificial substrate. It is to show that the entire conductive pin structure array 50 is separated and cleaned from the sacrificial substrate in a state in which only the conductive pin structure array ring portion is bonded to the sacrificial substrate.

In addition, in the 8-inch, 12-inch or larger sacrificial substrate, the outer ring portion 11 and the inner ring portion 15 are added to the sacrificial substrate as shown in FIG. When only the outer ring portion 11 and the inner ring portion 15 of the array 50 are manufactured in a bonded state, only the outer ring portion 11 and the inner ring portion 15 are adhered to the sacrificial substrate, so that the conductive pin structure array 50 is The entire structure array is separated from the sacrificial substrate so that the structure array units are not entangled with each other, and even after cleaning after separation, the conductive pins 30 are not deformed and the inspection of the defective pins is easy, so that the individual electrical conductive pins 30 of the good can be removed. It is easy to select.

In addition, one side of the individual conductive pins 30 is connected to the horizontal array bridge 25 as individual bridges 21, and the conductive pin structure array unit forms a horizontal array bridge 25 and a vertical array bridge 28 and The aeri bridge 25 is connected to the vertical array bridge 28, the horizontal edge bridge 25 and the vertical array bridge 28 is to be connected to the outer ring portion 11 and the inner ring portion 15. Such a bridge connection method can stably polish the metal plated on the conductive pin 30 structure by two-dimensional patterning during the planarization process to process the conductive pin 30 structure having a uniform thickness.

In addition, when only the conductive pin structure array 50 is removed from the sacrificial substrate, the conductive pin structure array units can prevent entanglement with each other.

In addition, even when the conductive pin structure array 50 is separated from the sacrificial substrate, the conductive pin 30 may remove organic matters without deformation even when cleaning the conductive pin structure.

In addition, the inner ring portion forms an inner ring portion having a circular or polygonal shape so that the inner ring portion is adhered to the sacrificial substrate with an adhesive so as not to be deformed when separating or cleaning only the electrically conductive pin structure array 50 from the sacrificial substrate. In addition, the shape of the intermediate ring portion 18 to be described later can also be formed in a circular or polygonal purpose is the same.

As shown in FIG. 4, the conductive pins 30 of which the sacrificial substrate is manufactured in a large size have an intermediate ring portion 18 formed between the outer ring portion 11 and the inner ring portion 15 to form an electrically conductive pin array. Units can prevent entanglement and deformation.

The conductive pin 30 structure formed on the entire sacrificial substrate of the plate may be a blank area 22 without a plurality of conductive pin 30 shapes in the central region of the conductive pin structure. The hollow area 22 of the conductive pin 30 shape can determine the flat thickness of the outer and inner sides during the planarization polishing.

As shown in FIG. 5A, the connecting portion 33 has a main coupling groove 35 and a main coupling portion at the center of the connecting portion 33 at the center of the connecting portion 33 so as to facilitate the bonding with the lower conductive conductive pin 40. A plurality of small connection joint grooves 38 are formed around the grooves.

The connection part main coupling groove 35 is inserted into the coupling protrusion 45 formed in the lower conductive pin 40, the connecting portion 43, and the plurality of small connecting joint grooves 38 are connected to the lower conductive pin 40. It is to be bonded to each other around the engaging projection 45 inserted in (43) to each other in a small connection portion joining groove 38 by embedding with a paste or the like.

By joining the small connection portion 38 into the grooves with a paste or the like, the connection thickness of the conductive pin connecting portion 33 and the lower conductive pin 40 connecting portion 43 can be reduced.

As shown in FIG. 5B, a coupling protrusion 45 is formed at the lower conductive pin 40 connecting portion 43 to be inserted into and connected to the main coupling groove 35 formed at the connecting portion 33 of the conductive pin 30. .

The conductive pin 30 connection part 33 is formed at one end of the conductive pin support part 32 on the left side or at the central side end or on the right end according to the position of the lower conductive pin 40 and the connection part 43.

The lower conductive pin 40 connection part 43 is formed at one end of the lower conductive pin support part 42 or at one end of the central side or at the right end according to the position of the conductive pin 30 and the connection part 33.

It is also possible to connect a conductive lead to the main coupling groove 35 formed in the connecting portion of the conductive pin 30 to the conductive electrode to the printed circuit board without the lower conductive pin.

6A to 6N are flowcharts for explaining a conductive pin manufacturing process.

As shown in FIG. 6A, the conductive pin is manufactured using a LIGA process and a MEMS process, and a single etched silicon substrate having a good etchability is manufactured as a sacrificial substrate, and the silicon substrate is polished and cleaned with a flat top surface. Improves adhesion and coating performance. Next, an oxide film is deposited on the top surface of the silicon substrate by CVD or PVD process.

As shown in FIG. 6B, a seed film is formed on the oxide film. It is preferable to use either Ni alloy, Ni, or Cu as a seed film.

The selected seed film is required as a seed layer for supplying electrons for reducing metal ions when electroplating is used to embed a conductive electrode material in an electrically conductive pin patterned shape.

As shown in FIG. 6C, the photoresist is uniformly and evenly coated on the silicon substrate seed film using a spin coater.

As shown in FIG. 6D, a photoresist mask on which a ring portion pattern is formed is prepared, and a desired ring portion shape is patterned by exposing and developing with a mask on an upper surface on which the photoresist is applied.

As shown in FIG. 6E, the patterned ring portion photoresist is removed.

As shown in FIG. 6F, the adhesive polymer is filled into the ring portion by an etch back process.

The adhesive may be any one of an adhesive polymer, a thermoplastic elastomer, a silicone elastomer, a hydrogel polymer, a polybutylene terephthalate, and a polyester, and the micro-thickness does not dissolve in the chemical used to separate the electrically conductive pin structure from the silicon substrate. If the non-conductive adhesive can be used as a coating.

As shown in FIG. 6G, the second photoresist is uniformly and evenly coated on the upper surface of the silicon substrate using a spin coater.

As shown in FIG. 6H, a photoresist mask on which an array pattern of conductive pin structures is formed is prepared, and exposed and developed with a mask on an upper surface on which the photoresist is applied to pattern a desired conductive pin shape.

As shown in FIG. 6I, plating of the conductive electrode material metal by electroplating is performed in the shape of the electrically conductive pin.

As shown in FIG. 6J, the overfilled metal layer is polished. Polishing is preferably carried out by a chemical machining (CMP) process.

As shown in FIG. 6K, the oxide film and the remaining photoresist are removed.

As shown in FIG. 6L, only the conductive pin structure array is removed from the silicon substrate in the state in which only the ring part is bonded.

As shown in FIG. 6m, a gold plating layer is formed on the front surface of the separated conductive pin structure in the state in which only the ring portion is bonded to the silicon substrate.

In the state in which only the ring portion is bonded to the silicon substrate as shown in FIG. 6n, the array of conductive pin structures is cleaned and used as individual conductive pins.

The conductive pin is made of a gold plated layer / nickel alloy / gold plated layer, the nickel alloy is selected from any one of nickel-cobalt, nickel-iron, nickel-chromium, nickel-tungsten, nickel-rydium, nickel-palladium, By selecting the best metal material that best meets the conditions, it is to produce a conductive pin of fine, uniform and desired shape.

Example 2

Example 2 is the same as the embodiment except for the conductive pin manufacturing process of the above-described embodiment 1 and the conductive pin manufacturing process of Example 2 is as follows.

7A to 7N are flowcharts for explaining a conductive pin manufacturing process.

As shown in FIG. 7A, the conductive pin is fabricated using a LIGA process and a MEMS process, and a single etched silicon substrate having a good etchability is manufactured as a sacrificial substrate, and the silicon substrate is adhered to the top surface with precise polishing and cleaning. And improve the coating performance.

Next, an oxide film is deposited on the top surface of the silicon substrate by CVD or PVD process.

As shown in FIG. 7B, a seed film is formed on the oxide film. As the seed film, any one of Ti-Au, Ni alloy, Ni, and Cu is preferably used.

The selected seed film is required as a seed layer for supplying electrons for reducing metal ions when electroplating is used to embed a conductive electrode material in the shape of the electrically conductive pin structure.

As shown in FIG. 7C, the photoresist is uniformly and evenly coated on the silicon substrate seed layer using a spin coater.

As shown in FIG. 7D, a photoresist mask having a ring portion pattern and a vertical array patterned is prepared and exposed and developed with a mask on an upper surface to which the photoresist is applied to pattern a desired ring portion and a vertical array shape.

As shown in FIG. 7E, the ring portion and the vertical array photoresist are removed.

As shown in FIG. 7F, the adhesive polymer is filled into the ring portion and the vertical array shape.

The adhesive may be any one of an adhesive polymer, a thermoplastic elastomer, a silicone elastomer, a hydrogel polymer, a polybutylene terephthalate, and a polyester, and the micro-thickness does not dissolve in the chemical used to separate the electrically conductive pin structure from the silicon substrate. If the non-conductive adhesive can be used as a coating.

As shown in FIG. 7G, the second photoresist is uniformly and evenly coated on the upper surface of the silicon substrate by using a spin coater.

As shown in FIG. 7H, a photoresist mask in which an array pattern of conductive pin structures is formed is prepared, and exposed and developed with a mask on an upper surface on which the photoresist is applied to pattern a desired conductive pin shape.

As shown in FIG. 7I, plating of the conductive electrode material metal by electroplating is performed in the shape of the electrically conductive pin.

The overfilled metal is polished as shown in FIG. 7J. Polishing is preferably carried out by a chemical machining (CMP) process.

As shown in FIG. 7K, the remaining oxide film and the photoresist are removed.

As shown in FIG. 7L, gold plating is deposited on the upper surface of the conductive pin structure separated from the ring portion and the vertical array but bonded to the silicon substrate by an E-beam process.

As shown in FIG. 7M, the ring portion and the vertical array are separated from the silicon substrate, but the conductive pin structure array is separated from each other.

As shown in FIG. 7n, the ring and the vertical array in the silicon substrate are used as individual conductive pins by cleaning the separated array of conductive pin structures in the bonded state.

The conductive pin 30 is made of a gold plated layer / nickel alloy / gold plated layer, the nickel alloy is selected from any one of nickel-cobalt, nickel-iron, nickel-chromium, nickel-tungsten, nickel-rydium, nickel-palladium And by selecting the best metal material that best meets the conductive pin conditions to produce a conductive pin 30 of fine, uniform and desired shape.

In addition, the patterning process is added to the conductive pin or lower conductive pin by three-dimensional patterning manufactured by the MEMS process, and the process is repeated.

In addition, the manufacturing method and the manufacturing method of the conductive pin by the two-dimensional patterning on the square sacrificial substrate by the MEMS process is the same as the above-described embodiment.

The sacrificial substrate used in the present invention is not limited to the silicon substrate, but all the sacrificial substrates used as electroplating may be used.

The present invention is not limited to the above-described method of coupling the conductive pins 30, but various modifications are possible by those skilled in the art within the spirit and scope of the present invention. The manufacturing method of these is the same.

FIG. 1A is a cross-sectional view illustrating a state where an array of electrically conductive pin structures formed by electroplating on a conventional sacrificial substrate is entangled when separated from the sacrificial substrate.

FIG. 1B is a cross-sectional view illustrating a modified state of the electrically conductive pin formed by electroplating on a conventional sacrificial substrate after cleaning.

2 is a cross-sectional view illustrating that the conductive pin structure array is cleaned in a state in which the conductive pin structure array is separated from the sacrificial substrate while only the outer ring portion of the conductive pin structure array is bonded to the sacrificial substrate of the present invention.

3 is a cross-sectional view illustrating a state in which an outer ring portion and an inner ring portion connected to the conductive pin structure array of the present invention are formed and a horizontal bridge and a vertical bridge are formed in the conductive pin structure array unit.

Figure 4 is a cross-sectional view showing the outer ring portion and the intermediate ring portion and the inner ring portion connected to the array of conductive pin structures of the present invention.

Figure 5 (a) is a cross-sectional view illustrating a coupling groove and a joining groove shape of the conductive pin connecting portion of the present invention.

Figure 5 (b) is a cross-sectional view illustrating the shape of the coupling protrusion on the lower conductive pin connecting portion of the present invention.

6 is a process flowchart illustrating a method of manufacturing an electrically conductive pin of the present invention.

7 is a process flowchart illustrating a method of manufacturing a lower conductive pin of the present invention.

Description of the Related Art

11... Outer ring portion 15.. Inner ring portion 18... Middle ring part

21... Electrical conduction pin bridge 25.. Street array bridge 28.. Vertical Array Bridge

30 ... Electrical conduction pin 33.. Electrical conduction pin connection 35. Connection main coupling groove

38... Connection joint groove 40... Lower conductive pin 43.. Bottom connection

45... Lower connecting portion engaging projection 50... Conducting Pin Structure Array

Claims (12)

In the electrically conductive pins manufactured by the LIGA process and the MEMS process, the outer ring portion 11 and the inner ring portion 15 are connected to the electrically conductive pin structure array 50 to form a horizontal array in the electrically conductive pin array unit. The bridge 25 and the vertical array bridge 28 are formed, and the entire conductive pin structure array 50 is separated and cleaned from the silicon substrate while only the outer ring portion 11 of the conductive pin array structure is adhered to the silicon substrate. The main coupling groove 35 and the bonding groove 38 are formed in the connecting portion 33 of the conductive pin, and the coupling protrusion 45 is formed in the connecting portion 43 of the lower conductive pin 40. Method for producing a conductive pin, characterized in that. The method of claim 1, wherein the conductive pin structure array (50) is a conductive pin manufacturing method, characterized in that formed in the plurality of predetermined areas in the shape of a plurality of conductive pins in the blank area (22). The method of claim 1, wherein the shape of the inner ring portion (15) and the shape of the outer ring portion (11) is formed in a circular or polygonal shape. The method of claim 1, wherein the intermediate ring portion (18) is formed between the outer ring portion (11) and the inner ring portion (15). The method of claim 1, wherein the electrically conductive pin structure array bridge is formed in a state in which a plurality of horizontal array bridges (25) and vertical array bridges (28) are connected. The conductive pin structure array bridge of claim 1, wherein the electrically conductive pin structure array bridge is separated and cleaned in a state in which the vertical array bridge 28 is adhered to a silicon substrate, and the outer ring portion 11 and the inner ring portion 15 of the electrically conductive pin structure array are formed. ) Remove and clean the entire array of conductive pin structures from the silicon substrate in a state where only the sacrificial substrate is adhered to the sacrificial substrate, and only the outer ring portion 11, the middle ring portion 18, and the inner ring portion 15 of the conductive pin structure array are silicon substrates. Method for producing a conductive pin, characterized in that for separating and cleaning the entire conductive pin array structure (50) from the silicon substrate in a bonded state. delete delete The method of claim 1, wherein the conductive pin and the lower conductive pin is made of a gold plated layer / nickel alloy / gold plated layer, the nickel alloy is nickel-cobalt, nickel-iron, nickel-chromium, nickel-tungsten, nickel-rydium, Electroconductive pin manufacturing method, characterized in that produced by selecting any one of nickel-palladium. The conductive pin manufacturing process A step of depositing an oxide film on the upper surface of the silicon substrate by CVD or PVD process. Forming a seed film on the oxide film; C) applying the photoresist onto the seed film using a spin coater device in a uniform and flat manner. D) preparing a photoresist mask having a ring portion pattern formed thereon, and exposing and developing the desired ring portion shape by exposing and developing the mask on an upper surface on which the photoresist is applied. E step of removing the ring-shaped photoresist. F filling an adhesive polymer into the ring portion shape. Step g of applying a secondary photoresist on the upper surface of the silicon substrate uniformly, evenly using a spin coater device. H preparing a photoresist mask having a conductive pin shape pattern formed thereon, and patterning a desired conductive pin shape by exposing and developing a mask on an upper surface on which the second photoresist is applied. I) performing plating to fill up the conductive electrode material metal by electroplating in the shape of the electrically conductive pins. Step j of planarizing and polishing the metal layer overfilled with the conductive cathode material by a chemical mechanical processing (CMP) process. K step of removing the oxide film and the photoresist remaining on the silicon substrate. L separating only the conductive pin structure array in a state in which only the ring portion is bonded to the silicon substrate. Step m of forming a gold plating layer with a substitution plating on the front surface of the conductive pin structure separated in the state in which only the ring portion bonded to the silicon substrate. The method of manufacturing a conductive pin, characterized in that the manufacturing process in the n-phase is used as a separate conductive pin by cleaning the array of conductive pin structure separated from the silicon substrate bonded only to the ring portion. delete The lower conductive pin manufacturing process A step of depositing an oxide film on the upper surface of the silicon substrate by CVD or PVD process. Forming a seed film on the oxide film; C) applying the photoresist onto the seed film using a spin coater device in a uniform and flat manner. D. Preparing a photoresist mask patterned with a ring portion pattern and a vertical array, and exposing and developing a mask on the upper surface to which the photoresist is applied, and patterning a desired ring portion and a vertical array shape. E) removing the ring portion and the vertical array photoresist. F filling an adhesive polymer into the ring portion and the vertical array shape. Step g of applying a secondary photoresist on the upper surface of the silicon substrate uniformly, evenly using a spin coater device. H preparing a photoresist mask on which an array pattern of a lower conductive pin structure is formed, and patterning a desired lower conductive pin shape by exposing and developing a mask on an upper surface of the secondary photoresist; I) performing plating to fill-in the conductive electrode material metal by electroplating in the lower conductive pin shape. Step j performing the planarization (CMP) polishing the metal overfilled with the conductive cathode material. K step of removing the oxide film and the photoresist remaining on the silicon substrate. L depositing gold on the upper surface of the lower conductive pin structure separated from the silicon substrate by the ring portion and the vertical array but bonded to each other by an E-beam process. The step m of separating the array of lower conductive pin structure in the silicon substrate bonded to the ring portion and the vertical array only. The method of manufacturing an electrically conductive pin, characterized in that the silicon substrate is manufactured in n steps of cleaning the lower electrically conductive pin structure array in the bonded state but the vertical array is used as an individual electrically conductive pin.

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