KR101172998B1 - Bow Probe block having a Bow Probe and Manufacturing method Bow Probe therof - Google Patents

Abstract

PURPOSE: A bow probe block having a bow probe and a manufacturing method thereof are provided to finely form 20um to 40um of a contact piece beam portion and a conducting piece beam portion of a bow probe by making the bow probe using a micro electromechanical system. CONSTITUTION: A contacting tip(21) is formed in a lower portion of a contact piece beam portion(25). A contact piece beam portion limit protrusion(23) is formed on the top of the contact piece beam portion. A deflection piece beam portion(35) is formed between a conducting piece beam portion limit protrusion(53) and the end of the contact piece beam portion limit protrusion. A deflection maintenance portion(33) is formed at one end of the deflection piece beam portion. A deflection hole(37) smoothing X-axis deflection is formed in the deflection maintenance unit.

Description

Bauprob block having bauprobe and a method for producing the bauprobe. {Bow Probe block having a Bow Probe and Manufacturing method Bow Probe therof}

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a probe block assembly having a vertical probe for semiconductor inspection, and in particular, to inspect semiconductors having a narrow pitch and various electrode pads.

The probe block assembly relates to a probe block assembly having a vertical bow probe in which an electrode pad inspects a memory chip and a non-memory chip that are in a peripheral array and an array in a multi-parallel manner.

The present invention relates to a probe block assembly of a probe card for inspecting a semiconductor chip arranged by electrode pads having a narrow pitch interval, wherein the probe block assembly inspects a semiconductor chip formed on a wafer with a multiparameter to select a defect.

Recently, semiconductor chips have been developed that have a variety of functions that combine memory and non-memory functions.

In the semiconductor chip having various functions, the electrode pads are irregularly arranged in the semiconductor chip, are regularly arranged, or the electrode pads are arranged in a single row or a plurality of rows around the semiconductor chip.

1 is a conventional cobra-shaped vertical probe and is manufactured by mechanically pressing a straight wire made of metal.

The cobra-shaped probe generates residual stress as a result of plastic deformation in the pressed part and the machined part.

When the cobra-shaped probe accumulates the residual stress generated in the pressed part, the probes are susceptible to deformation.

The cobra-shaped probe is processed into a metal made of straight wire, and the wire bend is less than 50 μm.

In the conventional probe, when the contact tip of the contact piece beam part contacts the electrode pad of the semiconductor chip to be inspected, excessively the contact pressure is generated in the deflection deflection beam part of the probe according to the overdrive, and excessive settling pressure conducted at the contact point of the contact piece beam part is caused by the deflection deflection beam part. There is a problem that the central beam of the deflection deflection beam portion is largely bent under pressure.

The position of the deflecting beam portion changes when the contact piece beam portion of the vertical probe is inserted into the contact piece beam portion hole in the contact piece beam portion hole of the conventional contact piece beam portion guide plate, which is not easy to assemble.

On the other hand, the electrode pad array of semiconductor chips in recent memory and non-memory fields has irregularly multidimensional arrays, and the pitch between the electrode pads has a narrow pitch, so that the probe roll for examining the electrical characteristics of the semiconductor chip is 50 μm or less. As vertical probes are required, the vertical probes that press the conventional straight wires have a multidimensional array of irregularly arranged electrode pads of semiconductor chips, and a vertical pitch of probe cards for inspecting devices having a narrow pitch between electrode pads. Could not be applied as a probe.

The present invention has been proposed in order to solve the above-mentioned problems. The contact probe beam of the Bau probe is manufactured by manufacturing a vertical probe with a microelectromechanical system (MEMS) in the shape of a Bow probe. It can be manufactured from 20um to 40um in thickness and the thickness of the conductive beam part (Beam) can be obtained with excellent precision and uniform vertical bow probe.

The bauprobe is a microelectromechanical system (Micro Electro Mechanical System) technology of the deposition process, lithography process, etching process, electroplating process, planarization process, insulating film deposition process and the like to make the bau probe fine and uniform.

It is to provide a bow probe having a deflection length desired by forming a deflection holding part in the deflection deflection beam portion (Beam) of the bow probe.

The deflection length and the overdrive are determined according to the number of deflection holding portions formed at one end of the deflection deflection beam portion, and the desired contact pressure required for semiconductor chip inspection can be given.

The deflection holding portion is formed at one end of the horizontal beam portion (Beam) or one end of the vertical linear beam portion (Beam) to prevent deformation of the deflection deflection beam portion.

It is possible to inspect semiconductors of various electrode pad arrays having narrow pitch between electrode pads and irregularly multi-dimensional arrays by providing the bow probe with a small occupied area by manufacturing the Bau probe with microelectromechanical system (MEMS) technology. .

The conducting piece beam part guide plate and the contact piece beam part guide plate of the probe block process the energizing piece beam part hole and the contact piece beam part hole by using microelectromechanical system (MEMS) technology or laser equipment. After forming the contact piece beam part limiting projection groove on the beam limiting projection groove and the contact piece beam part guide plate, the contact probe beam part limiting projection and the energizing piece beam part limiting projection of the bow probe are inserted into the probe hole. It is to prevent the center of the deflection deflection beam portion from rotating.

When the contact magnet beam part of the contact piece beam part guide plate is disposed in the lower part of the contact piece beam part guide plate and the contact piece beam part of the bow probe is inserted into the contact piece beam part guide plate, the inserted baube probe is fixed perpendicularly to the substrate magnet plate during assembly. The bow probe can be easily assembled to the contact piece beam part hole.

By manufacturing the Bau probe of the present invention by the microelectromechanical system (MEMS) technology, it is possible to finely manufacture the bends of the contact piece beam portion and the energized piece beam portion of the bow probe to 20 μm to 40 μm, and the precision and uniform vertical bow probe are excellent. In addition, the bow probe having the deflection retaining portion formed in the deflection deflecting beam portion is subjected to excessive needle pressure conducted at the contact end of the contact deflecting beam portion under pressure from the deflection deflecting beam portion (Beam) so that the central beam of the deflection deflecting beam portion is largely curved. The deflection holding portion is alleviated of excessive settling pressure so that the deflection deflection beam portion is subjected to less stress to prevent deformation and the pitch space of the deflection deflection beam portion adjacent to the deflection deflection beam portion is reduced.

Hereinafter, with reference to the accompanying drawings, the configuration state of the present invention and the unique effects obtained therefrom will be described in detail.

It is possible to manufacture the thickness of the contact probe beam part and the energized fragment beam part of the probe by 20um to 40um by manufacturing the vertical probe with the shape of a brow probe using the microelectromechanical system (MEMS) technology. You can get a probe.

The bow probe comprises a deflection deflection beam portion and a semiconductor chip which allow the contact tip beam portion in contact with the electrode pad of the semiconductor chip and the contact tip of the contact piece beam portion to maintain a desired contact pressure at the time of contact with the electrode pad of the semiconductor chip. The contact end of the contact piece beam part contacts the electrode pad of the contact pad, and the conduction piece beam part is connected to the interposer of the probe block assembly or the electrode pad arranged on the printed circuit board through the deflection deflection beam part.

The deflection retaining portion is formed in the deflection deflection beam portion of the bow probe, so that an excessive reaction force generated when the contact tip of the contact deflection beam portion contacts the semiconductor chip electrode pad is alleviated in the deflection holding portion formed on the deflection deflection beam portion. It is possible to secure an appropriate overdrive, and less needle pressure is generated in the central end beam of the deflection deflection beam portion, so that the deflection deflection beam portion provides a bow probe.

Even if the deflection holding portion is formed on the horizontal beam portion or the deflection holding portion is formed on the deflection beam portion of the bow probe, the effect obtained therefrom is the same.

The energizing piece beam portion of the bow probe may be formed in a different line or in the same line as the contact piece beam portion and the energizing piece beam portion according to the positions of the conductive pads (not shown) arranged on the interposer or the printed circuit board. It is.

Example 1

The bow probe 110 of the first embodiment forms a deflection holding part 33 at one end on the horizontal line of the deflection deflecting beam part 35.

As shown in FIG. 2, the bow probe 110 has a state in which a deflection retaining portion 33 is formed on a horizontal line at one end of the horizontal beam, one end of the horizontal beam, and one horizontal plane of the horizontal beam of the lower beam part of the deflection deflection beam part 35. The illustrated figure.

Referring to the detailed shape of the bow probe 110, the contact tip 21 is formed at the lower part of the contact piece beam part 25, and the contact piece beam part limiting protrusion 23 is formed at the upper part.

The bow probe 110 has a deflection piece between the current-carrying beam part limiting protrusions 53 formed under the current-carrying beam part 55 at the end of the contact-piece beam part limiting protrusion 23 formed at the upper portion of the contact-piece beam part 25. It becomes the beam part 35.

The bow probe 110 has one end of the lower beam portion of the deflection deflection beam portion 35 upwardly and vertically upward at the end of the contact deflecting beam portion restriction protrusion 23, and the deflection deflection beam portion at the end of the energization deflection beam portion restriction protrusion 53. One end of the upper beam portion 35 is formed to be bent toward the contact piece beam portion 25.

The bow probe 110 is a contact piece beam portion 25 and the energized piece beam portion 55 is formed in a different line in accordance with the offset length.

The bow probe 110 has a contact tip formed below the contact piece beam part 25, and the contact tip shape is formed by selecting any one of a flat shape, a radial shape, and a point shape. It is.

The shape, area, and quantity of the deflection retaining portion 33 formed at one end of the horizontal beam of the lower beam part of the deflection deflection beam part 35 and one end of the horizontal beam of the central end beam part and one end of the horizontal plane of the upper beam part of the bow probe 110 may be examined. It is determined by the settling pressure and deflection length.

In the deflection holding part 33 formed at one end of the deflection deflection beam part 35, a deflection hole 37 is formed to smoothly deflect the X axis.

The deflection holes 37 are formed in a plurality of inside the deflection holding unit by selecting any one of a circle, an oval, a triangle, a rectangle, and a polygon.

The beam thickness of the deflection holding part 33 formed on the deflection deflection beam part 35 of the bow probe 110 is greater than the deflection deflection beam part 35 thickness.

The deflection holding part 33 formed on the deflection deflection beam part 31 of the bow probe 110 is configured to deflect the reaction force generated when the contact tip 21 of the contact deflection beam part 25 contacts the semiconductor chip electrode pad. 33) there is an effect to alleviate the overdrive required by the Bau Probe (110).

When the contact tip 21 of the contact probe beam part 25 is in contact with the electrode pad of the semiconductor chip, the bow probe 110 has an elastic operation to return to the original state.

The bow probe 110 has a current limiting projection 53 formed at a lower portion of the energized piece beam portion 55, a junction end 51 at the top of the energized piece beam portion 55, and a junction line of the energized piece beam portion 55. The stage 51 is bonded to an electrode pad (not shown) arranged on an interposer (not shown) or a printed circuit board.

The bow probe 110 is formed by selecting any one of a flat shape, a radius shape, a point shape, a point shape, and a plurality of protrusions. It is.

In order to assemble a probe card capable of inspecting a narrow pitch between electrode pads of a semiconductor chip and various electrode pad arrangements having irregular multi-dimensional arrangements, the bow probe 110 is arranged on the deflection deflection beam part 35 of the bow probe 110. The insulating film is deposited or applied to block the leakage current between them.

The bow probe 110 is made of a metal alloy, the metal alloy is selected from the nickel alloy, palladium alloy, rydium alloy, copper alloy, tungsten alloy fine to the metal alloy that best matches the bow probe 110 The Bau Probe 110 of uniform and desired size and shape may be deposited using a micro electro mechanical system technology, such as a deposition process, a lithography process, an etching process, an electroplating process, a planarization process (CMP), and an insulating film deposition process. By using the Bau Probe 110.

Steps a to j of FIG. 3 are flowcharts illustrating a manufacturing process of the bauprobe 110.

As in step a, the bauprobe 110 is manufactured by using a MEMS process as a sacrificial substrate and polished after cleaning the surface of the silicon substrate to improve adhesion and coating performance, and then chemical vapor deposition on the upper surface of the silicon substrate ( The oxide film is deposited by a CVD process or a physical vapor deposition (PVD) process.

The oxide film is preferably deposited to a thickness of 200 angstroms to 1000 angstroms.

As in step b, the seed layer is deposited on the upper surface of the oxide film formed on the silicon substrate.

The seed layer is preferably deposited by selecting any one of Au, Cu, Ti-Au, Ti-Cu, Ti-Cr to 500 angstroms to 5000 angstroms.

As in step c, a photoresist is uniformly and evenly applied to the top surface of the seed layer formed on the silicon substrate by using a spin coater.

The photoresist may be PSR photoresist, novolac photoresist, and the photoresist is applied to the upper surface of the oxide film according to the desired thickness of the bau probe.

As in step d, the photoresist is coated on the silicon substrate with a mask formed with a bow probe shape to expose and develop a pattern to form a bow probe mold by removing the bow probe 110 patterned photoresist.

Preferably, the exposure apparatus irradiates ultraviolet (UV) light with a mask having a pattern of a bauprobe as a light source using a projection exposure machine or a close-up exposure machine.

As in step e, the electroplating is performed to fill the metal into the Bauprobe 110 shape mold.

As in step f, planarization is performed by a chemical machining (CMP) process to the desired thickness of the metal overfilled in the Bauprobe 110 shape mold.

As in step g, the photoresist remaining on the silicon substrate is removed.

The photoresist is removed with a photoresist stripper or an Asher device.

As in step h, after removing the oxide film from the silicon substrate, the Bau Probe 110 is separated and cleaned.

The oxide film is removed using a dedicated solution.

As in step i, an insulating film is deposited or coated on the Bau probe 110.

The insulating film is performed by vacuum deposition when using a parylene or a polar film, and is coated by an electro deeping method when using a polyimide or a polymer.

As in step j, the insulating film formed on the junction piece beam portion and the energization piece beam portion of the bow probe 110 is removed.

The insulating film applied to the contact piece beam portion and the energizing piece beam portion of the bow probe 110 may be partially removed using laser irradiation or a dedicated chemical or honing.

As shown in FIG. 4, the bow probe block 100 includes a conducting piece beam part guide plate 71, a deflection piece beam part guide plate 91, and a contact piece beam part guide plate 81, and the bow probe 110 is the bow. Figure is a schematic view showing the state assembled to the probe block.

The energizing piece beam portion guide plate 71 and the contact piece beam portion guide plate 81 are used to connect the energizing piece beam portion hole 75 and the contact piece beam portion hole 85 using a microelectromechanical system (MEMS) technology or laser equipment. The contact piece beam part limiting protrusion 23 of the contact piece beam part 25 of the bow probe 110 and the energizing piece beam part limiting protrusion 53 of the energizing piece beam part are formed into the contact piece beam part hole 75 and the energizing piece beam part hole ( 85 is to prevent the deflection deflection beam portion 35 of the bow probe 110 from being changed or rotated.

The energizing piece beam part hole 75 of the energizing piece beam part guide plate 71 is provided with a stepping groove beam limiting groove 77 for the step, and the contact piece beam part hole 85 of the contact piece beam part guide plate 81 is The contact piece beam part restriction projection groove 87 is formed step by step.

As shown in FIG. 5, the contact piece beam part 25 of the bow probe 110 is schematically shown in a state of assembling into the contact piece beam part hole 85 of the contact piece beam part guide plate 81.

A contact magnet beam portion 25 of the bow probe 110 is disposed in the contact piece beam portion hole 85 of the contact piece beam portion guide plate 81 by placing a substrate magnet plate 90 under the contact piece beam portion guide plate 81. ), The contact tip 21 of the contact piece beam portion 25 is fixed vertically on the substrate magnet plate 90 so that the conduction piece beam portion 55 of the bow probe 110 of the conduction piece beam portion guide plate 71 is inserted. Since it can be easily inserted into the energized piece beam portion hole 75, the probe block assembly can be easily assembled.

The contact piece beam portion guide plate 81 and the conduction piece beam addition guide plate 71 may be selected from a silicon plate, a silicon carbide plate, a silicon nitride plate, a machineable ceramic plate, and an engineering plastic to be used as a probe guide.

Example 2

In the bow probe 210 of the second embodiment, deflection holding parts 133a, 133b, and 133c are formed at one end of the deflection deflection beam part 135 in a vertical line.

As shown in FIG. 6, the bow probe 210 has a shape in which deflection holding parts 133a, 133b, and 133c are formed in a vertical line on one end of the lower beam part and the one end of the central beam part and the one end of the upper beam part of the vertical beam. It is a figure which illustrates the state comprised by.

The bow probe 210 may be a deflection deflection beam part 135 between the upper end beam of the contact piece beam part 125 and the lower end column of the energization piece beam part 155.

The bow probe 210 has deflection holding parts 133a, 133b, and 133c of the deflection deflecting beam part 125 being larger than the contact deflecting beam part 125.

One end of the lower beam portion of the deflection deflection beam portion 135 is vertically upwardly formed at the end of the upper beam (Beam) of the contact beam portion 125 of the bow probe 210, and the lower beam of the conducting fragment beam portion 155 is vertically formed. At the end, the deflection deflection beam portion 135 is formed to be bent toward the contact deflection beam portion 125.

The contact piece beam portion 125 and the energization piece beam portion 155 of the bow probe 210 are formed in different lines according to the offset length.

The bow probe 210 has a contact tip formed below the contact piece beam part 125, and the contact tip is formed by selecting any one of a flat shape, a radial shape, and a point shape. will be.

The shape, area, and quantity of the deflection holding parts 133a, 133b, and 133c formed at one end of the vertical beam of the lower beam part of the deflection deflection beam part 135 of the bow probe 210 and one end of the vertical beam of the center end beam and one end of the vertical beam part of the upper beam part are semiconductors. It is determined by the settling pressure and deflection length given when the chip is inspected.

A deflection holding part formed at one end of the deflection deflecting beam part 135 has a deflection hole 137 smoothly formed on the X axis.

The deflection holes 137 are formed in a quadrangle and are formed in the deflection holding parts 133a, 133b, and 133c.

The bow probe 210 has a lower deflection holding part 133a which is formed vertically on the lower end of the deflection deflecting beam part 135 and becomes a lower limiting projection of the deflection deflecting beam part 135 and deflects the bow probe 200. The upper deflection holding part 133c formed in a vertical line on the upper end of the deflecting beam part 135 becomes a upper limiting projection of the deflecting deflecting beam part 135.

In the bow probe 210, a plurality of deflection holding parts 133b are formed in the center of the deflection deflecting beam part 135 in a vertical line.

The deflection holding parts 133a, 133b, and 133c formed on the deflection deflecting beam part 135 of the bow probe 210 are adapted to react with the reaction force generated when the contact tip 121 of the contact deflecting beam part 125 contacts the semiconductor chip electrode pad. Dispersion is maintained in the deflection holding unit (133a, 133b, 133c) to ensure the proper overdrive required by the bow probe (210) and the deflection deflection beam portion 135 is generated by less needle pressure deflection deflection beam portion 135 ) Is to provide the bow probe (210) to prevent deformation.

When the contact tip 121 of the contact probe beam unit 125 is in contact with the electrode pad of the semiconductor chip, the bow probe 210 performs an elastic operation to return to the original state.

The bow probe 210 has an upper portion of the energized piece beam portion 155 at a junction tip 151 and a junction end 151 of the energized piece beam portion 155 is an energizer pad arranged on an interposer or a printed circuit board. It joins to (not shown).

The bow probe 210 is formed by selecting any one of a flat shape, a radius shape, a point shape, a point shape, and a plurality of protrusions. It is.

Deflection deflection beam portion 135 of bau probe 210 to assemble a probe block having bau probes 210 capable of inspecting narrow pitch between electrode pads of semiconductor chips and various electrode pad arrays having irregular multidimensional arrays. In the insulating film is deposited or the insulating film is applied to block the leakage current between the Bau probes (210).

The bow probe 210 is made of a metal alloy, the metal alloy is selected from the nickel alloy, palladium alloy, rydium alloy, copper alloy, tungsten alloy to select the metal alloy that best matches the bow probe (210) Fine, uniform and desired size and shape of the Bau Probe 210 using a micro electro mechanical system (CVD) process, lithography process, food processing process, electroplating process, planarization process, insulating film deposition process, etc. By manufacturing the Bau Probe (210).

A micro bau probe having a two-dimensional shape or a micro bau probe having a three-dimensional shape manufactured by a microelectromechanical system (MEMS) technology is manufactured by repeating a patterning process and a plating process so as to have a desired bau probe shape.

Steps a to h of FIG. 7 are flowcharts illustrating a manufacturing process of the bauprobe 210.

As in step a, the bauprobe 210 is manufactured by selecting one of a silicon substrate, a ceramic substrate, a quartz substrate, a glass substrate, and a metal substrate as a sacrificial substrate using MEMS technology, and cleans the surface of the selected sacrificial substrate after polishing. After the adhesion and coating performance are improved, an oxide film is deposited on the upper surface of the sacrificial substrate by a chemical vapor deposition (CVD) process or a physical vapor deposition (PVD) process.

As in step b, the seed layer is deposited on the upper surface of the oxide film formed on the sacrificial substrate.

The seed layer is preferably deposited by selecting any one of Au, Cu, Ti-Au, Ti-Cu, Ti-Cr.

The bow probe 210 has a c-1 process such that the deflection holding parts 133a, 133b, and 133c are vertically formed at one end of the vertical beam of the lower beam part of the deflection deflection beam part 135, one end of the vertical beam part of the central end beam, and one end of the vertical beam part of the upper beam part. The deflection holding parts 133a, 133b, and 133c of the deflection deflecting beam part 135 are formed by performing steps c-5 to d-1 to d-5 to e-1 and e-5. It is to be formed to.

Step c-1 is a step of applying a photoresist on the seed layer formed on the sacrificial substrate uniformly and evenly using a spin coater device.

C, which is patterned to form a mold by removing the photoresist patterned with the deflection beam portion lower pattern by exposing and developing with a mask in which a deflection beam portion lower shape of the bow probe 210 is formed on the upper surface of the sacrificial substrate. -2 courses.

C-3 process of filling the metal in the lower portion of the deflection deflection beam portion of the bow probe 210 to perform electroplating.

C-4 process of flattening the metal overfilled in the lower deflection beam portion lower mold of the bow probe 210 by a chemical machining (CMP) process to a desired thickness.

C-5 to clean the impurities remaining on the sacrificial substrate.

The impurities are cleaned using a dedicated solution.

In step d-1, the photosensitive liquid is uniformly and evenly applied to the sacrificial substrate on which the lower portion of the deflection deflection beam portion is formed by using a spin coater.

The center portion of the deflection deflection beam portion and the contact deflection beam portion and the conduction fragment beam portion of the bow probe 210 are arranged on the upper surface of the sacrificial substrate to which the photosensitive liquid is applied. And d-2 process of patterning to form a mold by removing the photoresist patterned by exposure and development, the center portion of the deflection deflection beam portion, the contact deflection beam portion, and the energizing fragment beam portion of the bow probe 210.

D-3 process of filling the metal into the center portion of the deflection deflection beam portion, the contact deflection beam portion, and the energization fragment beam portion mold of the bow probe 210 to perform electroplating.

D-4 process of flattening the center portion of the deflection deflection beam portion of the bow probe 210 and the metal being overfilled in the contact deflection beam portion and the energizing fragment beam portion by a chemical mechanical processing (CMP) process to a desired thickness.

D-5 process of cleaning the remaining impurities on the sacrificial substrate.

The impurities are cleaned using a dedicated solution.

In step e-1, the photosensitive liquid is uniformly and evenly applied to the sacrificial substrate on which the deflection deflection beam portion central portion, the contact deflection beam portion, and the energization fragment beam portion are formed using a spin coater.

The center portion of the deflected beam portion and the top portion of the deflected portion of the deflected beam portion are aligned with a mask having a top surface of the bow probe 210 formed on the top surface of the sacrificial substrate coated with a photoresist, and then exposed and developed to a bow probe ( E-2 process of patterning the upper surface of the deflection deflection beam portion patterned to form a mold.

E-3 process of filling the metal into the upper mold of the deflection deflection beam portion of the bow probe 210 to perform electroplating.

E-4 process of flattening the metal overfilled in the upper portion of the deflection deflection beam portion of the bow probe 210 by a chemical machining (CMP) process.

E-5 process of removing the photoresist remaining on the sacrificial substrate.

The photoresist is removed using a dedicated etching solution.

As in step f, after removing the oxide film from the sacrificial substrate, the Bau probe 210 is separated and cleaned.

The oxide film is removed using a dedicated solution.

As in step g, an insulating film is deposited or coated on the Bauprobe 210.

The insulating film is carried out by vacuum deposition when a parylene or a polar film is used, and is applied by an electro deeping method when a polyimide or a polymer is used.

As in step h, the insulating film applied to the junction piece beam portion 125 and the energizing piece beam portion 155 of the Bau probe 210 is removed.

Removal of the insulating film applied to the junction piece beam portion 125 and the energization piece beam portion 155 of the bow probe 210 may be partially removed using laser irradiation or a dedicated chemical or honing.

The present invention is not limited to the shape of the Bau probes 110 and 210 described above, and the contact piece beam portion and the energizing piece beam portion are formed in the same line without offset length so that the Bau probe is vertically made by those skilled in the art within the spirit and scope of the present invention. It can be manufactured by microelectromechanical system (MEMS) technology.

Figure 1 shows a state illustrating the shape of a conventional cobra-shaped vertical probe.

FIG. 2 is a view illustrating a state in which a deflection holding part is formed on a horizontal line at one end of a horizontal beam at one end of a lower beam part, at one end of a horizontal plane at a central end beam part, and at one end of a horizontal plane of an upper beam part in a bow probe according to Embodiment 1 of the present invention.

Steps a to j of FIG. 3 are flowcharts of the Bauprobe 110 manufacturing process.

FIG. 4 is a view schematically illustrating a probe block state in which a Baube probe is assembled to a conductive piece beam portion groove and a contact piece beam portion groove formed in the conductive piece beam portion guide plate and the contact piece beam portion guide plate of the present invention.

FIG. 5 is a view schematically illustrating a state in which the Bau probe is assembled by arranging the substrate magnet plate under the contact piece beam part guide plate of the present invention.

6 is a view illustrating a state in which a deflection holding part is formed in a vertical line on one end of the vertical beam of the lower beam part, one end of the vertical beam part of the center beam, and one end of the vertical beam part of the upper beam part of the bow probe according to the second embodiment of the present invention.

Steps a to h of FIG. 7 is a flowchart of the manufacturing process of the bauprobe 210.

Description of the Related Art

21.121... Contact tip 23.. Limiting projection of contact piece beam

25.125... . Contact piece beam portion 31. Deflection deflector beam part

33.133.. Deflection holding unit 37.137. Deflection hole

51.151... Junction tip 53.. Confining projection beam part

55.155... Current conduction beam portion 71. Energized curved beam guide plate

75... Energized curved beam portion hole 77... Confining projection beam section

81... . Contact piece beam portion guide plate 85. Contact piece beam hole

87... Limiting groove 90 for contact piece beam; Substrate Magnetic Plate

91... Deflection guide plate 100. Bauprob Block

110.210... Bauprobe

Claims (9)

In the vertical probe and its probe block, The vertical probe has a bow probe shape and is composed of an energized polarizing beam portion, a deflecting polarizing beam portion and a contacting polarizing beam portion. The bow probe has a deflection holding portion formed on the horizontal beam of the deflection deflection beam portion, The deflection retaining beam portion is formed with a plurality of deflection holding portions on the horizontal line and the deflection holding portion thickness is formed larger than the deflection deflection beam portion, The deflection holding unit is formed with a plurality of deflection holes, The probe block is composed of a conducting piece beam portion guide plate, a deflection piece beam portion guide plate, and a contact piece beam portion guide plate, The current-carrying beam part limiting projection groove is formed stepwise in the current-carrying beam part hole of the current-carrying-beam part guide plate; And a method for manufacturing a bauprob block having a bauprob, characterized in that the contact piece beam portion limiting projection groove is formed stepwise in the contact piece beam portion hole of the contact piece beam portion guide plate. The bake probe according to claim 1, wherein the energizing piece beam portion guide plate and the contact piece beam portion guide plate are manufactured by selecting any one of silicon plate, silicon carbide plate, silicon nitride plate, machineable ceramic plate, and engineering plastic. Bauprob block having a and a method for producing the Bauprob. The bow probe according to claim 1, wherein the bow probe is assembled with a bow probe by placing a substrate magnet plate under the contact piece beam part guide plate and inserting the contact piece beam part into the contact piece beam part hole. Block and Baubau Probe Method thereof. Bow Probe 110 manufacturing method Bauprobe is made of a silicon substrate as a sacrificial substrate, and after polishing and cleaning the surface of the silicon substrate to improve adhesion and coating performance, an oxide film is formed on the upper surface of the silicon substrate by chemical vapor deposition (CVD) or physical vapor deposition (PVD). A step of depositing; B depositing a seed layer on an upper surface of the oxide film formed on the silicon substrate; C) applying the photoresist on the seed layer formed on the silicon substrate using a spin coater, uniformly and evenly; D and patterning to form a mold by removing exposure and development of the photoprobe in which the Bauprobe shape is developed by exposing and developing a mask having a Bauprobe shape on the upper surface on which the photoresist is applied to the silicon substrate; Performing an electroplating process of filling the metal into the bow probe shape mold; A step of performing planarization by a chemical machining (CMP) process to a desired thickness of the metal overfilled in the Bauprobe-shaped mold; G step of removing the photoresist remaining on the silicon substrate; Removing h from the silicon substrate and separating and cleaning the Bauprobe; I) depositing or coating an insulating film on the bow probe; And And a step of removing the insulating film formed on the junction piece beam portion and the energizing piece beam portion of the bow probe, the bow probe block having the bow probe and the method for manufacturing the bow probe. 5. The method of claim 4, wherein the step i, the insulating film of the Bauprob is performed by vacuum deposition when using a parylene or a polar film, and an electro deeping method when using polyimide or a polymer. A bauprob block having a bauprobe, and a method for producing the bauprobe, wherein an insulating film is coated. The method according to claim 4, wherein the j step, the insulating film applied to the junction piece beam portion and the energizing piece beam portion of the bow probe is partially removed by using any one of laser irradiation, dedicated chemical, honing (Horing). A bauprob block having a bauprobe, and a bauprob manufacturing method thereof. Bow probe is composed of the energizing and deflecting beam portion and the contacting and deflecting beam portion, A deflection holding part is formed in a vertical beam of the deflection deflecting beam part of the bow probe; A plurality of deflection holding portions are formed in a vertical line and the thickness of the deflection holding portion is larger than that of the contact piece beam portion; The deflection holding unit is a bau probe block having a bau probe, characterized in that a plurality of deflection holes are formed and bau probe manufacturing method thereof. Bow Probe 210 manufacturing method Bauprobe is a step of polishing and cleaning the surface of the sacrificial substrate to improve adhesion and coating performance, and then depositing an oxide film on the upper surface of the sacrificial substrate by a chemical vapor deposition (CVD) process or a physical vapor deposition (PVD) process; B depositing a seed layer on an upper surface of the oxide film formed on the sacrificial substrate; step c; C-1 process of uniformly and evenly applying the photoresist on the seed layer formed on the sacrificial substrate using a spin coater. C-2 process of patterning to form a mold by removing the photoresist patterned with the lower deflection beam portion patterned by exposure and development with a mask in which the lower deflection beam portion of the bow probe is formed on the upper surface of the sacrificial substrate. C-3 process of filling the metal into the mold of the lower deflection beam portion of the bow probe to perform electroplating. C-4 process of flattening the metal overfilled in the lower part of the deflection deflection beam portion of the bow probe by a chemical mechanical processing (CMP) process. C-5 to clean the impurities remaining on the sacrificial substrate. step d; D-1 process of uniformly and evenly applying the photosensitive liquid to the sacrificial substrate having the lower shape of the deflection deflection beam portion by using a spin coater device. The center portion of the deflection deflection beam portion is formed on the upper surface of the sacrificial substrate to which the photosensitive liquid is coated, the contact deflection beam portion and the contact deflection beam portion and the conduction fragment beam portion are arranged in accordance with the deflection deflection beam portion lower shape. D-2 process of developing and patterning to form a mold by removing the photoresist patterned by the center portion of the deflection deflection beam portion, the contact deflection beam portion and the energizing fragment beam portion of the bow probe. D-3 process of carrying out electroplating by filling a metal in the center portion of the deflection deflection beam portion, the contact deflection beam portion and the energizing fragment beam portion mold of the bow probe. D-4 process of flattening the central portion of the deflection deflection beam portion of the bow probe and the metal overfilled in the contact deflection beam portion and the energizing fragment beam portion by a chemical mechanical processing (CMP) process to a desired thickness. D-5 process of cleaning the remaining impurities on the sacrificial substrate. step e; E-1 process of applying a photoresist on the sacrificial substrate having the central portion of the deflection deflection beam portion, the contact deflection beam portion, and the energizing fragment beam portion uniformly and evenly using a spin coater. The center portion of the deflection deflection beam portion and the deflection deflection beam portion upper shape are aligned with the mask having the upper shape of the deflection deflection beam portion of the bow probe on the upper surface of the sacrificial substrate, and then exposed and developed to expose the deflection deflection beam portion of the bow probe. E-2 process for patterning to form a mold by removing the photoresist patterned upper pattern. An e-3 process of filling the metal into the upper mold of the deflecting beam portion of the bow probe to perform electroplating. E-4 process of flattening the metal overfilled in the upper mold of the deflection deflection beam portion of the bow probe by a chemical mechanical processing (CMP) process. E-5 process of removing the photoresist remaining on the sacrificial substrate. Removing f from the sacrificial substrate and removing and cleaning the bauprobe; G) depositing or coating an insulating film on the bow probe; And And a h step of removing the insulating film applied to the junction piece beam portion and the energizing piece beam portion of the bow probe, and the bow probe block having the bow probe. The bauprobe of claim 8, wherein the bauprobe is manufactured by selecting one of a silicon substrate, a ceramic substrate, a quartz substrate, a glass substrate, and a metal substrate as a sacrificial substrate. Block and Baubau Probe Method thereof.

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