KR101647494B1 - Probe Card Manufacturing Method - Google Patents

Abstract

A probe card manufacturing method is disclosed. A probe card manufacturing method of the present invention is a method of simultaneously depositing a plurality of probes on a sacrificial substrate and then bonding the probe to a circuit board in a subsequent step. To this end, the probe is divided into a plurality of probe sublayers, which are deposited stepwise by a thick film deposition process by magnetron sputtering. According to this, not only the process is simpler than the conventional electroplating process, but also a probe having a much higher electrical characteristic than a probe formed by plating can be obtained.

Description

[0001] PROBE CARD MANUFACTURING METHOD [0002]

The present invention relates to a method of manufacturing a probe card by simultaneously forming a plurality of probes on a substrate by a MEMS (Micro Electro Mechanical System) process, and more particularly, to a method of manufacturing a probe card by a magnetron sputtering method The present invention relates to a probe card manufacturing method for forming a probe card in a three-dimensional pattern through a thick film deposition process.

During the semiconductor manufacturing process, a process for determining whether chips formed on a wafer are defective or not is necessarily included. For this purpose, a probe inspection apparatus is used. The probe inspection apparatus includes a tester for conducting a full inspection and a wafer prober for receiving a probe card in contact with the wafer.

The probe card includes a plurality of probes directly contacting a semiconductor die to be inspected, and a substrate assembly. The substrate assembly includes a circuit board or the like to which a probe is adhered and electrically connects the probe and the tester.

In place of the probe card manufacturing method in which probes conventionally formed by molding in a two-dimensional pattern are separately formed on a circuit board, a recent probe card manufacturing method is a MEMS (Micro Electro Mechanical System) for three- A method of bonding a plurality of probes formed by a process on a circuit board by a single process has been developed and used. In the MEMS process, since the plurality of probes are formed at the same time, the position and height of the entire probe can be exactly matched to the desired standard.

For such a recent probe card manufacturing method, various known three-dimensional patterning methods of MEMS already known can be used. For example, the probe card manufacturing method disclosed in Korean Patent Laid-Open No. 10-2008-0114095 corresponds to the three-dimensional patterning method of the MEMS by the multiple exposure single developing method. Including the disclosed patents, in the conventional probe card manufacturing method, the probe tip or the probe body is formed by an electroplating process.

However, when a metal tip or a body is formed by a plating process, in addition to making a desired three-dimensional shape of a probe, a process of forming a metal electrode for electroplating is necessarily required, which complicates the process, But may not have desired electrical characteristics in a semiconductor die that becomes finer due to the limitations of the characteristics.

It is an object of the present invention to provide a method of manufacturing a probe card by simultaneously forming a plurality of probes on a substrate by a MEMS (Micro Electro Mechanical Systems) process, wherein each component of the probes is subjected to a thick film deposition process by a magnetron sputtering method, And a probe card manufacturing chamber formed with the probe card.

According to another aspect of the present invention, there is provided a probe card manufacturing method comprising forming a support layer by depositing a first metal on a sacrificial substrate, depositing a second metal on the space formed by the support layer, ; Repeating the steps of forming the support layer and the probe sublayers to form a probe by interconnecting the probe sublayers to be laminated; And forming the probe card by bonding the formed probe to a circuit board on which an electrical wiring is formed and removing the laminated support layer.

The deposition of the first metal and the second metal may be performed by a first thin film having a tensile residual stress by a magnetron sputtering method using AC or DC pulses and a second thin film having a second residual stress by a sputtering method using a direct current It is preferable that they are formed by alternately repeating repeatedly depositing thin films.

According to an embodiment of the present invention, the step of forming the support layer and the probe sub-layer may include forming a master layer having the shape of the probe sub-layer using a photoresist on the sacrificial substrate or a layer formed immediately before the sacrificial substrate, step; Depositing the first metal on the sacrificial substrate on which the master layer is formed or a layer formed immediately before the sacrificial substrate and removing the master layer to form the support layer; And depositing the second metal on a layer formed immediately before the sacrificial substrate on which the support layer is formed and then grinding the second metal to expose the support layer to form the probe sublayers .

According to another embodiment, the step of forming the probe accessory layer and the support layer may produce the probe accessory layer earlier than the support layer, according to the embossing method. According to the embossing method, a step of forming a template layer having a space portion in the shape of the probe sub-layer using a photoresist is formed on the sacrificial substrate or a layer formed immediately before the sacrificial substrate. Depositing the second metal on the sacrificial substrate on which the mold layer is formed or a layer formed immediately before the sacrificial substrate and removing the mold layer to form the probe sublayers; And depositing the first metal on the sacrificial substrate or the layer formed immediately before the probe sub-layer is formed, and then grinding the first metal to expose the probe sub-layer to form the support layer have.

A seed layer may be formed before the support layer and the probe sublayers are formed on the sacrificial substrate for the first time to improve the adhesion between the sacrificial substrate and the support layer and the probe sublayers.

The probe card manufacturing method according to the present invention does not require a separate electrode for forming the probe metal by plating because the probe metal is deposited by the sputtering method instead of the plating process.

Further, since the probe itself is deposited by the magnetron sputtering method, the electrical characteristics such as the electrical resistance value of the probe itself are very excellent as compared with the plating.

1 is a view showing a probe card as a center of a probe according to the present invention,
2 is a cross-sectional view of a probe of the present invention,
FIGS. 3A to 3I are diagrams illustrating a manufacturing process provided in the explanation of the probe card manufacturing method of the present invention,
4 is a cross-sectional view of a support layer and a probe accessory layer deposited as a thick film by the magnetron sputtering method of the present invention, and
5A to 5D are manufacturing process diagrams provided in a description of a probe card manufacturing method according to another embodiment of the present invention.

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the drawings.

Referring to the probe card 100 shown in Fig. 1, a plurality of probes 101 directly contacting a semiconductor die to be inspected are bonded to a circuit board 105 by an adhesive layer 103 Respectively.

Basically, a plurality of probes 101 of the probe card 100 are formed at one time on the sacrificial substrate to be described below, and then adhered and formed on the circuit board 105 in a later process using the adhesive layer 103 do. Therefore, the deposition process of each probe 101 corresponds to thick film deposition.

Thick film deposition necessarily requires stress control to cause warping or twisting of the thick film. In order to solve this problem, the probe card manufacturing method of the present invention is a method of manufacturing a probe card by alternately repeating repeatedly depositing a first thin film having a tensile residual stress and a second thin film having a compressive residual stress using a magnetron sputtering method, A method of depositing a thick film having a stress within a possible range is used.

Accordingly, even though the plurality of probes 101 are deposited as a thick film, they do not bend and thus do not cause problems such as peeling from the sacrificial substrate. Referring to FIG. 1, the probe 101 has a structure in which a plurality of metal thin films are repeatedly deposited and stacked.

In addition, each probe 101 is divided into a plurality of probe sublayers according to their morphological or functional characteristics, and further divided into a plurality of probe sublayers for stable thick film deposition, even if they have the same morphological or functional characteristics . 2 is an example in which six probe sublayers of the first through sixth probe sublayers 309, 313, 317, 321, 325, and 329 are separated. The first probe subassembly 309 corresponds to the tip of the probe and the second and third probe subassemblies 313 and 317 correspond to the tip support for supporting the tip and the fourth probe subassembly 321 ) Corresponds to the resilient structure portion providing elasticity to the probe, and the fifth and sixth probe sublayers 325 and 329 correspond to the lower support portion of the probe. It can be seen that the tip supporting portion and the lower supporting portion are divided into two stages of probe sublayers in consideration of the thickness thereof. Therefore, the probe card manufacturing method is a method of continuously laminating the individual probe sublayers and interconnecting them.

For lamination of a plurality of probe sublayers, the following probe sublayer is laminated by keeping the support layer provided for formation of the probe sublayer or by forming and holding a support layer of the same height after formation of the probe sublayers. The support layer is removed at one time by a post-process.

Hereinafter, the probe card manufacturing method will be described in more detail with reference to FIG. Notwithstanding the above description, FIG. 3 shows a process in which one probe is formed, and the following description is followed. However, since the probe card according to the method of the present invention forms a plurality of probes at the same time, it can be seen that the probe sub-layers and probes shown in FIG. 3 are simultaneously formed on the sacrificial substrate in parallel.

<1. Preparation of sacrificial substrate: Fig. 3a >

The plurality of probes 101 are formed by thick film deposition on the sacrificial substrate 301 at first and then simultaneously adhered onto the circuit substrate 105 by the adhesive layer 103 in a post-process.

The sacrificial substrate 301 may be a ceramic substrate such as glass, a silicon substrate, or the like. The sacrificial substrate 301 may form the seed layer 303 on the sacrificial substrate 301 to increase or decrease the bonding force with the first support layer 307 or the first probe sublayer 309 depending on the material thereof . The seed layer 303 may be determined depending on the material of the sacrificial substrate 301 and the first support layer 307 or the first probe sub-layer 309.

The seed layer 303 may also be the magnetron sputtering method of the present invention.

<2. Lamination of probe sublayers>

A plurality of probes 101 are simultaneously formed on the sacrificial substrate 301 by stepwise laminating respective probe sublayers.

A 'support layer' is required to support the layer to be subsequently formed by filling the remaining portion of the layer in which the probe sub-layer is formed, in order to form a single probe sub-layer, followed by formation of a subsequent next level of the probe sub-layer. And the support layer is removed all at once by a post-process.

To form a support layer, a method (firstly, embossing method) in which a probe attachment layer is first formed and a support layer is formed (so-called embossing method) or a method in which a support layer is formed first and a probe attachment layer is formed .

&Lt; 2-a-1. Formation of first probe sublayer by intaglio method: Figs. 3b to 3e>

The first supporting layer 307 according to the engraved method serves as a mold for forming the first probe sub-layer 309 of the same layer. In order to form the first support layer 307, the master layer 305 of the photoresist is formed on the sacrificial substrate 301 first.

Referring to FIG. 3B, the master layer 305 may be patterned using a photoresist to form the first probe sub-layer 309 in accordance with a general photolithography process for manufacturing semiconductors or a two- or three- On the sacrificial substrate 301.

3C, a first support layer 307 is formed by depositing a first metal on the sacrificial substrate 301 on which the master layer 305 is formed by thick-film deposition by the magnetron sputtering method of the present invention, . The first metal serving as the material of the first support layer 307 can be a material that can be chemically removed without affecting the second metal serving as the material of the first probe sub-layer 309. For example, when the second metal is Rhodium or a nickel-cobalt alloy, the first metal of the first support layer 307 may be copper (Cu).

3D and 3E, after a first support layer 307 is formed, a second metal is thick-deposited on a space 308 formed by a first support layer 307 by a magnetron sputtering method, The second probe deposited layer 309 is formed by grinding and removing the second metal deposited to expose the second probe 307. Thereby, the first support layer 307 and the first probe sub-layer 309 were formed.

&Lt; 2-a-2. Lamination of probe sublayers by intaglio method: Fig. 3f>

The second to sixth support layers 311, 315, 319, 323 and 327 and the second to sixth probe accessory layers 313, 317, 321, 325 and 329 are formed by the first support layer 307 and the first probe sub- Lt; RTI ID = 0.0 &gt; 309 &lt; / RTI &gt;

The second to sixth support layers 311, 315, 319, 323, and 327 may be made of the same metal as the first support layer 307. On the other hand, the second to sixth probe sublayers 313, 317, 321, 325, and 329 may be made of a material different from the first probe sublayers 309 serving as tips, (Nickel-Cobalt) alloy is preferable.

The first to sixth probe accessory layers 309, 313, 317, 321, 325, and 329 are stacked and interconnected to form the probe 101 by the above-described repetitive process.

Here, the first to sixth support layers 307, 311, 315, 319, 323 and 327 and the thick film used for sputtering the first to sixth probe sublayers 309, 313, 317, 321, 325, The deposition method is as follows.

Basically, the magnetron sputtering method is a method in which argon (Ar) or the like, which is an inert gas, is converted into plasma to generate argon cations and the argon cations are controlled to collide with a target such as a negatively charged first metal or a second metal, Allowing atoms or atomic clusters to be sputtered from the target. The sputtered atoms are sputtered on the substrate or just prior to deposition on the deposited surface to form the support layer or probe sublayer.

Referring to FIG. 4, it is preferable that the support layer or the probe accessory layer by sputtering is formed as a thick film having a thickness of about 5 to 300 탆, The second thin films 403, 407, 411, 415, and 419 may be alternately repeatedly deposited in accordance with the residual stress to limit the total stress to an allowable range.

The first thin films 401, 405, 409, 413, and 417 are films having characteristics of tensile residual stress. The first thin films 401, 405, 409, 413, and 417 are sputtered by DC pulses or AC plasma generated by DC pulses or AC supplied to the magnetron sputter deposition source . The second thin films 403, 407, 411, 415, and 419 are formed by sputtering by a DC plasma generated by supplying a DC power source to a sputter deposition source.

The metal deposited by sputtering is formed at a high density and has excellent electrical characteristics and heat transfer characteristics. Particularly, the probe-attached layer by sputtering is made by the magnetron sputtering method of the present invention, so that it has an advantage that its electrical characteristics are extremely excellent.

The seed layer 303 described above can also be deposited by the above-described magnetron sputtering method.

<3. Completion of the probe card by bonding to the circuit board: Figs. 3g to 3i>

A plurality of probes 101 formed on the sacrificial substrate 301 in the above-described manner are bonded onto the circuit board 105 on which the electrical wiring is formed. 2) to adhere the sixth probe subassembly layer 329 and the circuit board 105 after deposition of the last probe subassembly (329 of FIG. 2) to adhere the probe 101 to the circuit board 105, The adhesive layer 103 is formed on the probe auxiliary layer 329 and then the adhesive layer 103 of the probe 101 is bonded to the circuit board 105 by a thermal bonding method or the like.

Alternatively, the adhesive layer 103 may be formed on a pad (not shown) provided on the circuit board 105. Thereafter, the adhesive layer 103 may be bonded to the circuit board 301 with the probe 101 by a thermal bonding method or the like.

Since the sacrificial substrate 301 is used for depositing a plurality of probes 101, it is removed when the deposition of the probes 101 is completed. The removal of the sacrificial substrate 301 may be performed before bonding with the circuit board 105 or may be performed after bonding the adhesive layer 103 to the circuit board 105. [ 3G and 3H show an example in which the sacrificial substrate 301 is removed after the adhesive layer 103 formed on the probe 101 is adhered to the circuit substrate 105.

Referring to FIG. 3I, after the probe card is bonded to the circuit board 105, the probe card is formed by removing the first to sixth support layers 307, 311, 315, 319, 323, and 327 at a time. Since the first metal (e.g., copper) as the support layer material can be chemically removed without affecting the second metal (e.g., rhodium or nickel-cobalt) that becomes the material of the probe accessory layer, Only the support layer can be removed without affecting the probe.

The fabrication of the probe card described above describes the process of forming the probe sublayers and support layers by the embossing method.

In the case of the embossing method, the remaining processes except for the process of forming the probe sublayers and the support layers in FIGS. 3B to 3F are the same as those of the engraved method. In the process of forming the probe accessory layer and the supporting layer, a photoresist is used instead of a supporting layer as a mold for forming the probe accessory layer, and the whole process is opposite to the etching process. Therefore, the processes of FIGS. 3B to 3F showing the engraved method are replaced with the processes described below.

&Lt; 2-b-1. Formation of first probe sub layer by embossing method >

5A, a first probe sub-layer 505 is formed on a sacrificial substrate 301 using a photoresist according to a photolithography process for fabricating semiconductors or a two-dimensional or three-dimensional patterning process according to a MEMS process, A mold layer 503 having a shape of a space 501 is formed.

5B, a mold layer 503 is formed and then a first probe sub-layer 505 is formed by depositing a second metal on the sacrificial substrate 301 on which the mold layer 503 is formed, Leaving only the first probe sub-layer 505 by removing layer 503.

5C, a first metal is deposited on the sacrificial substrate 301 where only the first probe sub-layer 505 is left, and then the first metal deposited is ground to expose the first probe sub-layer 505 A first support layer 507 having the same height as the first probe sublayers 505 is formed.

&Lt; 2-b-2. Lamination of probe sublayer by embossing method>

The second to sixth probe sublayers 509, 513, 517, 521 and 525 and the second to sixth support layers 511, 515, 519, 523 and 527 are formed by the first probe sublayers 505, (507).

Accordingly, the first through sixth probe sublayers 505, 509, 513, 517, 521, and 525 are interconnected to form the probe 101.

By the above method, the probe accessory layer and the support layer are formed, and then the <2-a2. The probe 101 is attached to the circuit board 105 and the sacrificial substrate 301 and the first to sixth support layers 507, 511, 515, 519, 523, and 527 are removed to complete the probe card.

While the present invention has been particularly shown and described with reference to exemplary embodiments thereof, it is clearly understood that the same is by way of illustration and example only and is not to be construed as limiting the scope of the invention as defined by the appended claims. It will be understood by those skilled in the art that various changes in form and details may be made therein without departing from the spirit and scope of the present invention.

101: probe 103: adhesive layer
105: circuit board 301: sacrificial substrate
303: Seed layer 305: Master layer
308:
307, 507: first support layer 309, 507: first probe attachment layer
311, 511: second support layer 313, 509: second probe attachment layer
315, 515: third support layer 317, 513: third probe attachment layer
319, 519: fourth support layer 321, 517: fourth probe attachment layer
323, 523: fifth support layer 325, 521: fifth probe attachment layer
327, 527: sixth support layer 329, 525: sixth probe attachment layer
401, 405, 409, 413, 417: first thin film
403, 407, 411, 415, 419:
503: Mold layer

Claims (8)

Depositing a first metal on the sacrificial substrate to form a support layer and depositing a second metal on the space formed by the support layer to form a probe sublayer;
Repeating the steps of forming the support layer and the probe sublayers to form a probe by interconnecting the probe sublayers to be laminated; And
Forming a probe card by adhering the formed probe onto a circuit board on which an electrical wiring is formed and removing the laminated support layer,
The deposition of the first metal and the second metal,
A first thin film having a tensile residual stress by a magnetron sputtering method using alternating current or direct current pulses and a second thin film having a compressive residual stress by the sputtering method using a direct current are alternately repeatedly vapor- Gt;
The method according to claim 1,
The step of forming the support layer and the probe sub-
Forming a master layer having the shape of the probe sub-layer on the sacrificial substrate using a photoresist;
Depositing the first metal on the sacrificial substrate on which the master layer is formed and removing the master layer to form the support layer; And
Depositing the second metal on the sacrificial substrate on which the support layer is formed and then grinding the second metal to expose the support layer to form the probe sub- .
Depositing a second metal on the sacrificial substrate to form a probe sublayer and depositing a first metal on the remaining areas of the probe sublayer to form a support layer;
Repeating the steps of forming the probe accessory layer and the support layer, the probe accessory layers being laminated are interconnected to form a probe; And
Forming a probe card by adhering the formed probe onto a circuit board on which an electrical wiring is formed and removing the laminated support layer,
The deposition of the first metal and the second metal,
A first thin film having a tensile residual stress by a magnetron sputtering method using alternating current or direct current pulses and a second thin film having a compressive residual stress by the sputtering method using a direct current are alternately repeatedly vapor- Gt;
The method of claim 3,
Wherein forming the probe accessory layer and the support layer comprises:
Forming a template layer on the sacrificial substrate, the template layer having a space in the shape of the probe sub-layer using a photoresist;
Depositing the second metal on the sacrificial substrate on which the mold layer is formed and removing the mold layer to form the probe sublayers; And
Depositing the first metal on the sacrificial substrate on which the probe sub-layer is formed, and then grinding the first metal to expose the probe sub-layer to form the support layer. Gt;
The method according to claim 1 or 3,
Further comprising the step of forming a seed layer for increasing the adhesion between the sacrificial substrate and the support layer and the probe sublayers before forming the support layer and the probe sublayers on the sacrificial substrate for the first time, Way.
The method according to claim 1 or 3,
Wherein forming the probe card comprises:
Forming an adhesive layer on the finally deposited probe metal layer by the step of forming the probe, and then adhering the adhesive layer to the circuit board by thermal bonding;
Removing the sacrificial substrate from the probe; And
And removing the support layer while the probe is bonded to the circuit board.



The method according to claim 1,
And repeating the step of forming the supporting layer and the probe sub-layer in the step of forming the probe,
Forming a master layer having a shape of a new probe sub-layer on the support layer and the probe sub-layer using a photoresist;
Depositing the first metal and removing the master layer to form a new support layer on the support layer and the probe accessory layer on which the master layer is formed; And
Depositing the second metal on the support layer and the probe accessory layer on which the new support layer is formed and then grinding the second metal to expose the new support layer to form the new probe accessory layer Wherein the probe card is made of a metal.
The method of claim 3,
And repeating the step of forming the probe sub-layer and the support layer in the step of forming the probe,
Forming a template layer having a space in the shape of a new probe sublayer using the photoresist on the probe sublayer and the support layer;
Depositing the second metal and removing the mold layer to form the new probe sublayers on the probe sublayers and support layers on which the moldlayers are formed; And
Depositing the first metal on the probe sub-layer and the support layer on which the new probe sub-layer is formed, and then grinding the first metal so that the new probe sub-layer is exposed to form a new support layer Wherein the probe card comprises a plurality of probe cards.

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