TWI311200B - - Google Patents

Description

1311200 IX. Description of the invention: [Technical field to which the invention pertains] The present invention relates to a probe for testing, in particular to a probe structure made of a chemical reaction using electrolysis 5 15 [Prior Art] With the advent of the nano age Various kinds of high-intensity, measurement devices also need to take into account the demand of contact quantity ^ ^ low interference measurement device interference error factors, to the semiconductor degree, as much as possible to reduce the integrated circuit is increasingly miniaturized and multi-functional = Li test For example, it is necessary to have a high-density probe distribution to test the fast function of the fast St-channel probe, and the precision component of the probe is padded, and the accurate and low-error probe test is performed. The high-precision probe structure of the test welding system has been developed. , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , On the semiconductor light ^ = the layer of the shirt is patterned to reveal a base pattern ι 〇 层 layer _ on the production - conductive layer ", root two 4 22 after machining to form a specific aspect of the majority of gold (10) brother one Figure c is referenced, and then the upper photoresist layer of each metal pin Ua is partially patterned to overlap another conductive layer of a certain height =, , sub-shaped a metal tip 2a, and finally the resistive material is removed. For the insulating light used in the basement, use the "Exploration 2 = ... water, 襟" metal traits... 4 20 1311200 However, the above-mentioned stacking method is to use the utmost: advance: the figure, the electrical layer - and ==: $ The insulating photoresist material is used to remove the photoresist material from the metal needle to form the pattern, and the 11a is the ancient soil... The needle is inevitably damaged by the nuclear residue of the metal needle, so that the probe is lowered. The probe 1 is made of a segmented stacked metal tip ^, 'metal tip! The joint interface between 2a and the metal needle lLA is as good as the formed metal material. It has a good metal bonding ability, so it is easy to be damaged by the momentary contact stress when detecting the element to be tested. Therefore, the application of the integrated circuit process technology is a diversified micro-contact measurement structure, but the contact = easy =: ^ force loss two money forming Houqi (four) (four) guide defects 'still the face of today's measuring device manufacturers - Great test. Debate _ 15 [Summary of the Invention]: The purpose of the two is to provide a kind of micro-contact component element and the same material ~ used to make a large number of high-precision micro-contact pieces 'Yatong Green Gu 5 line and The characteristic of the derivative f degree.制备=:Step: The invention provides a method for making interconnections of micro-contact elements - the substrate 'on the substrate is formed with a plurality of inner connecting structures, adjacent to each other =; knot = in the first - Forming a second conductive layer on the conductive layer, the second conductive layer 202131200 can be electrolytically reacted with a specific electrolyte layer, the second conductive layer having a plurality of needle structures respectively corresponding to the respective needle structures The inner connecting structure is electrically contacted; a sacrificial layer is formed on the second conductive layer, and the sacrificial layer defines an electrode region corresponding to each of the partial portions of the 5-pin structure; removing the electrode regions of the sacrificial layer, so that The sacrificial layer is formed with a plurality of covering structures; a voltage supply is provided, the voltage supply having one of a first polarity and a second electrode having opposite charges; 10: preparing an electrolytic cell, wherein the electrolytic cell is provided with the electrolyte The first electrode and the structure prepared in the above step are immersed in the electrolyte, and the first electrode is disposed on the sacrificial layer corresponding to the electrode regions. The second electrode electrically connects the inner connections. Structure; when When the electrode structure of the electrode region is electrochemically reversed, the longitudinal direction is reduced to a specific height, that is, the electrolytic cell and the voltage supplier are removed; and the covering structures are removed, and the substrate is formed thereon. Most of the above microcontact elements. 20 [Embodiment] Hereinafter, a number of preferred embodiments will be described in conjunction with the drawings for a detailed description of the structure and function of the present invention, wherein the schematic diagrams of the drawings are as follows: Second Figures A to E are provided by the present invention. Process diagram 6 1311200 of the first preferred embodiment; the display material - the recording surface provided by the recording surface is provided with the function of the needle structure: the formation of each of the above-mentioned preferred embodiments The application of the probe is described in the preferred embodiment provided by the preferred embodiment for forming each of the probes. The sixth embodiment of the second preferred embodiment of the present invention is shown in FIG. 7 is a schematic diagram of the process of the third preferred embodiment of the present invention. And the seventh figure is the schematic of the above-mentioned third preferred embodiment for each of the needles electrochemical anti-reding device. The seventh figure c is the cantilever device provided by the third preferred embodiment. Schematic diagram of the structure; the eighth figure of the wooden needle to the C system of the present invention A schematic diagram of a crucible knot 7 1311200 of the fourth preferred embodiment is provided;

a schematic diagram of the device that generates electricity and electricity

The vertical ninth diagram is a schematic diagram of a process structure of a fifth preferred embodiment of the present invention. As shown in the second figure, the buckwheat is provided with the first preferred embodiment of the present invention, which is expanded by 10, and has the following steps for the electrochemical reaction with the semiconductor process technology forming method: L is as shown in the second figure A. As shown, a substrate 20 is prepared and a first sacrificial layer 21 is formed on the substrate 2A. 2. As shown in the second figure b, the first sacrificial layer 21 of the pattern is removed by the semiconductor yellow light process technology, and the substrate 20 of the patterned region is etched to form a specific width and depth. A plurality of component patterns 22, which are stencils for forming a metal substrate of the probe, and the substrate 20 can be a ruthenium substrate used for a general semiconductor substrate to facilitate application of the existing mature semiconductor process technology. 3. As shown in the second figure c, the first conductive layer 23' is disposed on the substrate 20 and the first sacrificial layer 21 as a first conductive layer 23' between the bottom of each of the element patterns 22 and the element pattern 22. The metal interface to be connected to the electrodes is corresponding to the plurality of inner connecting structures 230 corresponding to the element patterns 22 8 1311200. 4. As shown in FIG. D, a second conductive layer 24 is formed on the first conductive layer 23, and the second conductive layer 24 is the same material as the first conductive layer 23, and has a good electrical conductivity. A deposition material such as a cast material is filled in the element patterns 22, and is machined by polishing or the like to be as high as the first conductive layer 23, so that a plurality of needle structures 24a are formed in the element patterns 22, The metal substrate of the probe is fabricated and can react electrolytically with a specific electrolyte. 5. As shown in FIG. E, on the second conductive layer 24, a second sacrificial layer 25 is formed. The second sacrificial layer 25 can be opened on each of the pin structures 24a by a yellow light process. An electrode region 25a is formed, and the second sacrificial layer 25 is retained and a cover structure 25b is formed on each of the pin structures 24a. 6. As shown in FIG. F, a voltage supply 30 and an electrolytic cell 15 40 are prepared. The voltage supply 30 has one of opposite polarity first and second electrodes 31, 32. The first electrode 31 The second electrode 32 is electrically connected to the first conductive layer 23, which is electrically connected to the second conductive layer 24, and is electrically connected to the second conductive layer 24. An electrolyte 41, 20 is formed by immersing the structure formed in the above step 5 and the first electrode 31 in the electrolyte 41, and the electrode-electrode 31 is located on the electrode regions 25a. 7. As shown in the second diagram G, the metal atoms on the surface of each of the needle structures 24a are subjected to an oxidation reaction of the second electrode 32, that is, the electrolyte 9 1311200

The metal ions are liberated in 10 15 41 and are accelerated by the electric field between the two electrodes 31 and ^ to accelerate the metal free phenomenon corresponding to each of the needle structures 24a of the electrode region, since the covering structures are still present 25b covers the portion of each of the needle structures, so that when the height of the needle structure 24a; the iHP-electrode region 25a is reduced, the edge of the covering structure 25b is adjacent to the edge of the covering structure 25b. The metal free phenomenon under the structure Mb is more scaly than that of the electrode region, and when the material structure (10) is reduced to a predetermined thickness in the electrode region 25a, the needle material 2a is formed into a tapered shape under the covering structure 25b. A needle tip. As shown in the second figure, the supplier 3 and the electrolytic cell 40' are removed and the covering structures 25b, the portion of the first sacrificial layer 2 corresponding to the first conductive layer 23, and the first sacrificial layer are removed. Therefore, a plurality of probes 2 integrally formed are formed on the substrate 2 and the first conductive layer 23.

After the above fabrication is completed, the substrate 2 and the first conductive layer can be removed to remove the probes 2, and the first conductive layer can be connected to each of the probes 2 23 Take it together, as shown in the second picture! As shown, by making the first conductive layer 23, the probes 2 which are finally formed are further covered with a branch-like impurity 23 and formed to be high and resistant to wear-resistant, and of course The probe 2 is formed by the structure, and the first and second clothes of the material are used to check the gold layer 23, 24, so as to have the best interface = force ' or the first conductive layer 23 is selected The material with high hardness makes the shafts of the shafts 2, and is more resistant to narration; as for each of the probes = 10 1311200 2 \ is corresponding to the setting position of the cover structures 2 5 b As shown in the third figure, the field changes the position of the electrode region 25c and the remaining covering structure W of the second sacrificial layer 25, and the second button can be used to form a plurality of probes by the electrochemical fabrication principle of the present invention. 2", each of the woods 12 corresponds to the shutter structure 25 (the needle tip 2e made by 1 also changes accordingly. = read as shown in the first call, # the above probes 2 are completed = : 2〇 and - the conductive layer 23, the portion of the substrate 20 and the first conductive layer 23 corresponding to each of the 妒# A a# f are retained, so the substrate 5% and the first conductive layer after the i λ probe device 3 ′ is retained for The probe 2 is used for the arm of the electronic component to be tested. Therefore, as long as it corresponds to the electronic circuit of the probe card circuit board, the probes formed on the 15 woven board 2G are directly disposed on the circuit board. Each of the probes 2 is electrically connected to the circuit board by the second conductive layer 23

The cantilever type probe device P: can be configured efficiently and quickly. Of course, the female board 20 is considered as the second of the probes 2: (1), if used for high precision or low current measurement] : The material of the insulating property is constructed, and not the same as the semi-conductor; the (4) probe 2 is applied to the cantilever probe, and the equivalent is applied to the above-mentioned Wei needle 2, the principle is further, will be slanted by 9 coins, so I will not repeat them here. The electronic device connected to the circuit board is electrically connected to the other side of the first conductive layer 23, and the other cantilever type probe device 3 shown in FIG. For example, on the probe card of the space conversion circuit structure, the substrate is: and;: the electric 11 20 1311200 layer 23 corresponds to each of the probes 2 of the ancient @ μ μ · ^ metal through holes 201 & There is a metal through hole 2〇1, and each of the five genus holes 20W connects the probe 2 and the substrate 202, and the solder pads 202$ are placed on a space pad, and the probes 2 can be achieved. With the space conversion circuit, the electric two = point = = fast assembled with the cantilever probe device 3' -: Ϊ Ϊ = type probe device 3, 3, through the substrate 20 will be some probe 2 connected to the probe card circuit board, so the material of the 2" includes the strength of the stress and the maintenance phase; 15 20 effect, part ^ may not be suitable for the general semi-first cover technology" so please see The sixth preferred embodiment of the present invention shown in the sixth embodiment differs from the first preferred embodiment described above in the modification step and the base in step 2. The material of 2() and the fabrication of the sacrificial layer 21 are replaced by a substrate 26 having a high hardness and good insulating properties, and a sacrificial layer 27 having a relatively high thickness, the sacrificial layer 27 It can be a photoresist material suitable for the semiconductor reticle technology. Therefore, the element pattern 22 is formed in the substrate 2 by the two sides of the substrate 20 and the first sacrificial layer 21, and then the pair is directly changed. The first sacrificial layer 27 is patterned and patterned. Therefore, the element patterns 22 having a specific width and depth are also formed on the substrate 26, and then the first V electrical layer 23 and the second conductive layer 24 are disposed in the same step. And the second sacrificial layer 25 can still form the same structure as the probes 2, 2 of the first preferred embodiment, and if the cantilever probe device is further formed, the sacrificial layer 27 is completely removed. In the above configuration, the probes 2, 2 can be disposed on the substrate 26, and have equivalent functional applications as the upper 12 1311200 s-helicopter probe devices 3, 3'. The third comparative example provided by the present invention is an electrochemical reaction The manufacturing method of forming the other two structures is different from that of the first preferred embodiment described above. 5: As shown in FIG. 7A, the substrate 20 is a double-layer structure. The mask technology has a recess 22a recessed on the substrate 20 and then

The element pattern 22 is formed on the recess 22a, and then a plurality of inner connecting structures 28, a needle structure 29" and the second sacrificial layer 25 are formed on the substrate 2 and the first sacrificial layer 21, and the inner connecting portions are respectively connected. The structure 28 has an equivalent functional structure as that provided by the first preferred embodiment, and each of the needle structures 29^2 defines a fixing portion 29a in the recess 22a; as shown in the seventh figure b, the upper 15 The device is also equipped with the voltage supplier 30 and placed in the electrolytic cell 4, and the same needle reaction structure 29 can be reduced under the electrode region 25a to a predetermined thickness. 2%, covered

Under the structure 25b, a conical needle tip portion 29C is formed. 20, as shown in FIG. 7C, finally removing the cover structure 25b, the portion of the inner sacrificial layer 21 corresponding to the inner sacrificial layer 28, the first sacrificial layer 21, and the substrate 2〇 above the distal fixing portion 29a. Therefore, a suspension type I probe device 4 can be formed, including a base 200 and a plurality of probes 4, which are formed by the substrate 20 below the fixing portions 29a. The fixing pin 29 is connected to the base 200 by the fixing portion 29a, and the fixing portion 29a, the needle portion 29b and the needle tip portion 29c are also covered by one of the inner connecting structures 28. Material 280, the cantilever probe 13 1311200 = two ==:: the probe is used for 4°, and the probe 2 is measured, and the 1 t, the temple > The cantilever probe is applied to the device 4:5; and the upper paste is followed by the 3, 3, and __ materials, and the material of the fourth preferred embodiment of the present invention is provided by the present invention; ^Technical money _ vertical probing: 〒A is not prepared - the substrate 5 〇, and on the substrate j. The upper-first sacrificial layer 5 is a photoresist layer 53. The V-electrode layers 52 and 2·=^ are shown, and the specific pattern element pattern 54 is removed by the semi-guided mask technique. A plurality of transfer visibility and iceness are shown in the figure 15 20 3. 2 8 FIG. C. After the components are applied to the first conductive layer 52, the light is mechanically twisted, such as by grinding, etc. The plurality of needle structures 55a, the woven and the needle body structures 55a are stacked with a second sacrificial layer 56, = «; the green layer 56 corresponds to each of the needle structures 55 & The Kyodo area 56a and the cover of the striker, - μ 黾 55 are also good::,, '° constituting, 3 haidi - conductive layer liquid ^ produces electrolysis = read material' can be the same as the above electrolysis The voltage supplier 3G and the electrolytic cell 14 1311200 4〇' electrically connect the second electrode 32 to the first conductive layer 52, and the structure formed by the above step 3 and the first electrode 31 are not prepared. Immersed in the electrolyte 41, the first electrode is located only in the electrode regions 5, so that the electrochemical reaction as in the above embodiment also occurs, so that each of the j-pin structures 55a is reduced below the electrode region to a predetermined thickness. ^ Needle is big.卩5a' under the cover structure 5, you form a needle body 5b 〇5. Voltage supply 3G and electrolytic cell 4Q, and remove the cover ο a 53 substrate 50, a sacrificial layer 51 - coating "layer 52 ' Then, a plurality of needles can be formed as shown in FIG. 8E, and the tip of each probe 5 can be used: =2: the electrochemical reaction between the body portion 5b and the first conductive layer 52 On the needle body 5b, because of the isolation of the structure 1b, the electric field acts only on the needle small, and the effective 20 (four) axis straight probe system for controlling the metal free action is the above-mentioned flat structure. In a preferred embodiment of the fifth embodiment, a plurality of shaped electrodes are formed in an arc shape on the surface, and then the electrolytic layer 40 is used to make the ^=Electrical layer %, and the edge of the structure is set to be adjacent to each 3y knife. The needle electric field only occurs in a space perpendicular to the surface of each of the needle structures 55a, which is perpendicular to the surface of the plum (4), and also = 15 1311200 is at or above the range of the electrode regions 56a, so the needle body The chemical reaction between the part and the electrolyte 41 is far less than the speed of forming the electrochemical reaction of the tip of the needle. This may be the same as the eighth form of £ each of the configuration in FIG. 5 of the vertical probe. 5 In summary of the above embodiments, the present invention rapidly generates a metal free phenomenon in the needle-counter structure corresponding to the electrode region by the electrochemical reaction, and the thickness of the needle body structure can be integrally formed into a plurality of micro-contacts. Applied to the cantilever or vertical probe card, too = each probe is made with good electrical conductivity and high stress tolerance: Therefore, it is only a good practical example of the present invention. However, the change, package 16 1311200 [Simplified description of the drawing] The schematic diagram of the process diagram of the cantilever probe of the first figure; the structure of the sound is the same as the process of the invention of the first preferred embodiment provided by the present invention. BRIEF DESCRIPTION OF THE DRAWINGS FIG. F is a schematic view of the above-described preferred embodiment; FIG. G is a schematic view of a device for electrochemically reacting each of the needles according to the above-described preferred embodiment; The third embodiment of the preferred embodiment of the present invention provides a third embodiment of the preferred embodiment of the present invention.卞,,°° 15 is a schematic view showing the structure of the cantilever type provided by the above-mentioned first preferred embodiment; the fifth drawing is a schematic structural view of the _needle device provided by the above-mentioned 帛-纽实关; 楝20 图; 6 is a schematic diagram of a process structure of a second preferred embodiment of the present invention; FIG. 7 is a process structure of a third preferred embodiment of the present invention. FIG. 7 is a third preferred embodiment of the present invention. A schematic diagram of a device for generating an electrochemical reaction for each of the needles and gentlemen; 17 1311200 FIG. 7c is a schematic view of the structure of the cantilever probe device provided by the above third preferred embodiment; A to C are not intended to be a process structure of the fourth preferred embodiment of the present invention, and FIG. 8D is a schematic view of a device for electrochemically reacting each of the needle structures according to the fourth preferred embodiment; FIG. 8 is a schematic view showing the structure of each of the vertical probes provided in the fourth preferred embodiment; and FIG. 9 is a schematic view showing the process structure of the fifth preferred embodiment of the present invention. 18 1311200 [Description of main components] 2, 2, 2", 40 Probes 2a, 29b, 5b Needle 2b, 2c, 29c, 5a Tips 2d, 5c Ends 3, 3', 4, 5 cantilever Probe device

10 15 20, 26, 50 substrate 201 metal through holes 21, 27, 51 first sacrificial layer 22a concave portions 230, 28 inner connecting structure 24, 55 second conductive layer 29a fixed portions 25a, 25c, 56a electrode region 30 voltage supply 32 second electrode 40 electrolytic cell 53 photoresist layer 200 pedestal 202 pad 22, 54 element pattern 23, 52 first conductive layer 231, 280 support material 24a, 29, 55a needle structure 25, 56 second sacrificial layer 25b , 25d, 56b cover structure 31 first electrode 33 forming electrode 41 electrolyte

19

Claims (1)

1311200 X. Patent application scope: 1 - Kind of conformity a. Preparation - "There are submerged steps: the first conductive layer has a plurality of layers formed on the substrate - the first conductive layer, which is connected to each other; the connection structure" Adjacent to the inner connecting structure 5 b. in the first 遂 tape t layer can be formed with a specific electric=layer - the second conductive layer 'the second conductive majority of the needle structure ^ generates an electrolytic reaction, the second The conductive layer has a structural electrical contact; the % pin structure respectively forms a sacrificial layer on the θ of each of the corresponding pin structures, and the sacrificial layer corresponds to d The 4th line defines an electrode area; % u. 戎 戎 戎 戎 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数 多数The opposite one of the first and the second electrode; "there is a polarity of the polarity of the flute + the preparation of the electrolysis cell". The electrolytic cell is provided with the above electrolyte, and the structure made of the smear d is immersed in the An electrolyte is disposed on the sacrificial layer on the sacrificial layer corresponding to the electrode regions, and the second electrode a pole 2 is connected to the inner connecting structures; g. § corresponding to the electrode portion, each of the needle structures undergoes an electrification 0 sub-reaction to reduce the longitudinal direction to a specific height except the electrolytic cell and the voltage supply; A plurality of the above-described microcontact elements are formed on the substrate. 2. The method according to claim 1, wherein the micro-contact element is manufactured according to the method of claim 1, wherein in the step a, a plurality of component patterns are formed on the substrate, and in the step b, the pin structures are respectively disposed in the respective In the element pattern, the size of each of the needle structures is similar to the element pattern. 3. According to the method of fabricating the microcontact element according to the second aspect of the patent application, the method for forming the element pattern is to form a first sacrificial layer on the substrate, and to correct the semiconductor yellow domain technology. After the sacrificial layer is slaughtered and the first sacrificial layer of the patterned portion is removed, the patterning region 10 is subjected to (four) veins on the pair of wires to reduce the width and depth of the element patterns. 10 4. The method for fabricating a microcontact element according to claim 2, wherein the pattern is formed by forming a sacrificial layer on the substrate by a half-body yellow light process technology A sacrificial layer is patterned, and the first sacrificial layer of the patterned portion is removed to form the element patterns having a specific width and depth. 15 5. The first conductive layer is disposed on the first sacrificial layer and the plurality of patterns according to the method of fabricating the microcontact element according to the third or fourth aspect of the patent application. [6] The method for fabricating the microcontact element according to the second aspect of the patent application, wherein the pattern formation method is to form a -first sacrificial layer on the first conductive layer by semiconductor yellow light process technology The first sacrificial layer is patterned, and the first sacrificial layer of the patterned portion is removed to form the element patterns having a specific width and depth. 7. The method for fabricating a microcontact element according to claim 2, wherein each of the components has n attached to the substrate, and each of the pins 1311200 has a fixed portion formed in the recess, and in step g, each The height of the needle body structure is reduced longitudinally higher than the fixing portion. 8. The method according to claim 1, wherein in the step g, each of the electrode structures is formed as a body portion of the micro-contact element corresponding to each of the cover members, corresponding to each of the cover structures Formed as a tip of the micro-contact π piece, the tip portion is for contacting the electronic component. 9. The method according to claim 1, wherein in the step g, each of the electrode structures is formed as a tip portion of the micro-contact member corresponding to each of the cover structures, corresponding to each of the cover structures. The pin portion of the micro-contact element is for contacting the electronic component. A method for fabricating a microcontact element, comprising the steps of: a. preparing a substrate, forming a conductive layer on the substrate, the layer being capable of reacting with a specific electrolyte, the conductive layer having 15 20 = body structure, each of the needle structures is electrically connected to each other, and a part of each structure defines an electrode region; body, ,,. Conversely, the b_ supply ^ 'the voltage supply has one of the opposite polarity of the first and the second electrode; c · provides an electrolytic cell 'the electrolytic cell is equipped with the above-mentioned electrode and the above-mentioned steps & In the electrolysis II, the 'heart two electrodes are electrically connected to the night, and the needle structure is difficult to be used as the electrode and each d· is employed in each of the Wei districts. On the substrate, a plurality of upper micro-pressures 22 1311200 are formed on the substrate, and the micro-contact elements of the micro-contact elements of the first aspect of the patent application are formed on the substrate. The element pattern 1 is correspondingly disposed on each of the element patterns, and each of the needle body patterns 1 ^, ° Haifan pieces are similar. The manufacturing method, # + ”Specially-specifically, the range of the micro-contact elements described in item 11 of the first-first paragraph:: ===::5==:: the pattern of the components of the depth. The heart system & Specific width and potential i mr Please refer to the =-sacrificial layer of the micro-contact element described in Item 11 of the patent range, and remove the t 15 «^ sacrificial layer by semiconductor yellow light process technology, I 疋I degree and depth According to the method of the third aspect of the patent application, each of the element patterns has a concave portion, and the needle body structure of the connecting member forms a fixing portion in the concave portion. μ soil plate, the height of each body structure is reduced longitudinally higher than the fixed part. In each of the 5 hai needles 15 · According to the scope of the patent, the first method of production, 'Step a', the formation of these electrode areas is A cover structure is formed on the structure, and the cover structure is made of a material having a ten-body and a ten-body knot. Therefore, corresponding to each of the needle structures, the portion outside the edge characteristic is each of the electrode regions. And the occlusion structure is made by 23 20 1 0, 3*^ Μ _ range of the micro contact element described in item 15. In the micro-contact element ^/d, each of the electrode structures is formed as a micro-contact element body, and corresponding to each of the cover structures is formed as the 17=, the part of the tip is used for Contacting the electronic component. The manufacturing method, step 35. The micro-contacting component of the micro-contacting component of the fifteenth patent of the monthly patenting wheel, the erecting or the needle-shaped structure corresponding to each of the electrode regions is formed as a micro-contacting component. Corresponding to each of the covering structures, the U needle tip portion is formed to contact the electronic component. The manufacturing method, the step: t Li La, the fifteenth item of the micro contact element, the needle body structure is large The first electrode is equal to or larger than the electrode d, and the counter electrode 'H towel, and the first electrode is disposed on the first Dina 15 f forming region to form a conductive region. The portion of the sacrificial layer corresponding to each of the pins 2 即 is the electrode regions. 20 The manufacturing method, the step 1 9 of the micro-contact elements of the needle structure size of the first electrode Is equivalent to or greater than the corresponding section on the sacrificial layer =: step c 'The first electrode is set at 2 ^ and is in the position of some electrode regions. The manufacturing method, =m range, the first part of the micro-contact element's poles respectively correspond to each other; ^ each ^^ is provided by the first electrode Each of the shaped electrode structures has a smaller size than the electrode area in each of the warfare faces. 1311200 22 · According to the manufacturing method of the microcontact element according to Item 21 of the patent application scope, in the step d, each of the needle bodies The structure corresponds to each of the electrode regions being formed as a tip portion of the microcontacting member, the tip portion being for contacting the electronic component.