TW569017B - Vertical probe card with feedback contact force sensor - Google Patents
Vertical probe card with feedback contact force sensor Download PDFInfo
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569017569017
【技術領域】 m 1外又例 本發明為使 具有較大的柔順度,或具有探::觸f式彈簧探針’使其 用多層式厚光阻電鍍探針,微梦 回饋’其特徵為使 作精密探針卡,使得高價的精極結合,可容易製 格,減少人為裝配技術的依賴。木,可因而降低其價 【先前技術】 長期以來,各種電子產品, 量ic化,並隨產品功能增強與增多電路’被大 I /0腳數因而增多,且辦宓,、 "、、細小’ IC的 變得更A闲魏目廷使得IC製程後的測試,也 ^更為困難。心1(:所f要 ^ ^ ^DIP .SOP ^SOJ .SQFP . BGA F 到目前的覆晶(flip-chip)時 、覆日日(fliP —chip), , . 、P ehlP) k,其I/O接腳已是由陣列佈置[Technical Field] Another example of m 1 is to make the present invention have a large flexibility, or to have a probe: touch the f-type spring probe 'make it use a multilayer thick photoresist plating probe, micro dream feedback' its characteristics In order to make it as a precision probe card, it can make high-priced precise combination, which can be easily customized and reduce the dependence on artificial assembly technology. Therefore, it can reduce its price. [Previous technology] For a long time, various electronic products have been quantified, and with the enhancement of product functions and more circuits, the number of large I / 0 pins has increased, and they have been implemented, " ,,, Smaller ICs have become more sophisticated. Wei Weiting makes testing after IC manufacturing processes more difficult. Mind 1 (: all f ^ ^ ^ DIP .SOP ^ SOJ. SQFP. BGA F to the current flip-chip, fliP — chip,,., PehlP) k, which I / O pins are already arranged by the array
‘P等或凸塊(bump)所構成,因此原使用於DIP 用於F曰的7安,*、斜式的探針,如第一圖所示,並不易使 ;^曰曰、,、例。所以,因應發展出垂直式(vertical = pe)的楝針卡,如日本TCL與美國Wentw〇rth [吡〖π.合 作 a探針卡’及美國RNC的垂直接觸式(Vertical contact)探針卡笙 λ.. 、 T卞寺均屬之。無論何種形式的探針卡,可 以說絕大多數伸用/ _ — 人工的方式去編排探針的位置,因此技 術^、’、二驗層—人非常高,導致探針卡單價甚高,而且若遇有 故I1早=磨耗’也多半送回原廠採用人工維修方式處理。為 了改善此種情況’美國專利US58 699 74及US5828 22 6利用微'P, etc. or bumps, so the original 7 A, *, oblique probe used in DIP for F, as shown in the first figure, is not easy to use; example. Therefore, vertical (vertical = pe) needle cards have been developed accordingly, such as Japanese TCL and American Wentworth [Pi [π. Cooperation a probe card 'and American RNC's Vertical contact probe card Sheng λ .. and T 卞 Temple belong to it. No matter what type of probe card, it can be said that most of them use / _ — to manually arrange the position of the probe, so the technology ^, ', the second inspection layer-the person is very high, resulting in a high unit price of the probe card And, if there is a reason, I1 = early wear is also returned to the original factory for manual maintenance. In order to improve this situation, US patents US58 699 74 and US5828 22 6 use micro
569017 五、發明說明(2) 機電製程技術來克服下列問題:1 ·傳統探針卡上的探針共 面度不易達成。2 ·待測晶圓上的晶粒(d i e)或I C本身的共 面度不佳。3 ·傳統探針使用久了會變形及磨耗或偏差。f 晶粒(die)的測試銲墊(test pad)通常有氧化現象,傳統 探針可能得出大力刺穿氧化層,因而破壞測試銲墊。5…薄 膜(membrane)式探針卡(美國專利US 518〇 9 77 )的複雜及 不便。 ” 美國專利US 58 69974,乃利用微機電製程中體型微加 =技術(bulk micromachining)為主。其主要優點是利口 二iff達成彈性薄膜的作用,缺點是(1 )測試用的探 =身較不具彈性’因為石夕基薄膜一般變形量 = 大小並不知道,且(3)使用^針對測试杯塾的接觸力 (4 ) ^ % ^ ^ ^ )使用久了 ,仍有磨耗的問題, 、4 J ί木點的製作並不易複製。 美國專利US5 82822 6 ,主亜从展 的方式達到有適當撓度。1f的k點是探針使用懸壁樑 電鍍及拋光的方法,探針的材‘為„影、敍刻、 雜。(2 )探針撓度較小。(3) 二=。缺點疋(1)製程複 不易得知。 一稷製性。(4 )探針接觸力 為改善以上現有技術的缺點, 一 術,I探針的製程利用多層式本毛明使用三項重要技 結合,使探針的撓产更 子光阻電鍍,微裝配及陽極 壓力感測器,可由ί針接觸==複製性。2.結合薄膜式 針陣列與印刷電路板之間的空;探二接觸的狀況。3.探 __ θ轉換器,利用球栅陣列 569017 五、發明說明(3) 陶方式達成’簡易又成本低廉。 【發明目的] 本發明的目的之一, 配及陽極結纟製作垂直彈^用夕層式厚&阻電*,微裝 度,可容易製作精密= 使ί具有較大的柔順 能因而降低其價格,減少使得高2的精密探針卡可 本發明#目的之二曰為裳配技#的依賴。569017 V. Description of the invention (2) Electromechanical process technology to overcome the following problems: 1 · The coplanarity of the probes on the traditional probe card is not easy to achieve. 2 · The coplanarity of the die (d i e) or IC on the wafer to be tested is not good. 3 · Traditional probes will deform and wear or deviate over time. f The test pad of the die usually has an oxidation phenomenon, and the traditional probe may get a strong pierce through the oxide layer, thereby damaging the test pad. 5 ... The complexity and inconvenience of a membrane probe card (US Pat. No. 5,108,977). The US patent US 58 69974 is mainly based on bulk micromachining in the micro-electro-mechanical process. Its main advantage is that Liff II achieves the function of an elastic film. The disadvantage is that (1) the probe used for testing = Not elastic 'because the general deformation amount of Shi Xiji film = the size is unknown, and (3) using ^ for the contact force of the test cup (4) ^% ^ ^ ^) has been used for a long time, there is still the problem of wear, 4 J ί The production of wooden dots is not easy to copy. US patent US5 82822 6, the main way to achieve the appropriate deflection. 1k point is the probe using the cantilever beam plating and polishing method, the material of the probe 'For „Shadow, Narration, Miscellaneous. (2) The probe deflection is small. (3) Two =. Disadvantages: (1) Complex process is not easy to know. One restraint. (4) The contact force of the probe is to improve the shortcomings of the prior art. First, the manufacturing process of the I probe uses a multi-layer Ben Maoming using three important techniques to make the probe's flexure more photoresist plating and micro-assembly. And the anode pressure sensor can be contacted by the pin == replicability. 2. Combining the space between the thin-film needle array and the printed circuit board; detecting the state of the second contact. 3. Explore the __θ converter, using the ball grid array 569017 V. Description of the invention (3) The pottery method is simple and low cost. [Objective of the Invention] One of the objectives of the present invention is to produce vertical springs with anode junctions. The layer thickness is thick & electric resistance *, the degree of micro-assembly, and it can be easily produced. Its price reduces the dependency that the high 2 precision probe card can be used for the purpose of the present invention.
探針接觸力感測器的薄腹^將j米針安置的基板設計成含有 饋,來達到監測探針接觸的:此就可以利用探針接觸力回 片,以本發明的主勒★ f的狀況。利用預先準備的標準晶 凸塊或銲塾的參考受^板^卡,可以量取標準晶片所有各 較其受力大小,而尸▲ ^根據此受力紀錄,與待測晶片比 否有偏位,缺陷。于0采針是否有故障磨損,或待測點是 本發明的目的之二 斗 可使探針卡下壓,:二右探針卡部分探針的受力較低, 誤判晶片電路測試與凸塊或銲塾未接觸好,而 本發明的目的夕而The thin belly of the probe contact force sensor ^ The substrate of the j-meter needle is designed to contain a feed to monitor the probe contact: Then the probe contact force can be used to return the film to the main feature of the present invention. F Condition. By using the pre-prepared reference wafer or card for the standard crystal bumps or solder pads, you can measure all the standard wafers with respect to their forces, and the body ▲ ^ According to this force record, is there any deviation from the wafer to be tested? Bit, defect. At 0, whether the needle is faulty or worn, or the point to be measured is the second purpose of the present invention, the probe card can be pressed down: the force on some probes of the two right probe card is low, and the chip circuit test and projection are misjudged. The block or welding pad is not in contact, and the object of the present invention is
量的測試,從單—’使探針卡組合,可以提供多種容 的測試機台,即可:罝二多晶片,至晶圓級,只要有配八 f的變化,至於佈線的ΚΙ為;Ϊ拼圖的",達到: 易於完成。 ^"度及稷雜度,以微機電技術,比 白 本發明的目的夕χ 的探針接觸力下使精密的ic電路測試,可因— 付到穩定的電性測試結果,豸免接觸;Quantitative test, from single-'probe card combination, can provide a variety of capacity test machines, that is: two multi-chip, to the wafer level, as long as there is a change of eight f, as for the wiring KI; ΪPuzzle " to achieve: Easy to complete. ^ " Degree and impurity, using micro-electromechanical technology, compared with the purpose of the present invention to make the precise ic circuit test under the contact force of the probe, can be-due to the stable electrical test results, avoid contact ;
569017 五、發明說明(4) 良的干擾 本發明的目的之六 π 間轉換器,利用球柵陣列(BGA)方^^與印刷電路板之間的空 廉。 式達成,簡易又成本低 【技術内容】 舉出i體實施例,並貝广人更進_步了解本發明,以下玆列 發明之構成内容及功】號等說明,詳細說明本 圖示 習知使用於DIP及QFP等的水平傾 本發明之垂直探針陣列與探針所+ =如。 整體組裝的情形。 斤而的印刷電路板 本發明之使用球柵陣列(BGa) 圖 圖五 大的功^。 H ^式來達成小轉 (二明。之球柵陣列(BGA)封裝承載的印刷電路板 Ϊ:;;二晶封裝方式從球拇陣列咖板㈣ 本發明之垂直式探針的結構。 本發明之垂直式探針的類型。 本發明之解析值和模擬值的比較圖。 第9頁 五、發明說明(5) 圖力 , 圖十本^明之探針應力分佈圖。 圖十-ί:之探針彎角的最佳化。 固.ii明之可行的探針間距及變开“ 2明之微探針置於薄膜上的::圖。 =明之製作垂直式微探針 方式。 明之製作探針接觸力感測;= t务明之上下導蓋製作的程序,。、的程序 發明之探針卡裴配過程。 圖號 1 垂直式探針卡 2 水平式探針 3 銀膠 4壓力感測器 10可内設壓阻的薄膜基板 11探針陣列 12上導蓋 13下導蓋 1 4含LTCC或BT/玻璃基板的球柵陣列(BGA)結構 15印刷電路板(PCB) 1 6 空間隔板 1 7固定螺絲 18 L型金屬夾具 1 9固定夾具 第10頁569017 V. Description of the invention (4) Good interference The sixth object of the present invention is to utilize the space between the ball grid array (BGA) and the printed circuit board. The formula is simple, and the cost is low. [Technical content] Give examples of i-systems, and further understand the present invention. The following is a description of the composition and functions of the invention. It is known that the horizontal probe arrays and probes of the present invention used for horizontal tilting of DIP, QFP, etc. are as follows. The whole assembly situation. The printed circuit board of the present invention uses a ball grid array (BGa). H ^ type to achieve a small turn (Er. Ming). Ball grid array (BGA) package carried printed circuit board Ϊ: ;; two-crystal packaging method from the ball thumb array coffee board ㈣ vertical probe structure of the present invention. The type of the vertical probe of the invention. The comparison chart between the analytical value and the simulation value of the invention. Page 9 V. Description of the invention (5) Drawing force, Figure 10 The stress distribution chart of the probe. Figure 10-ί: Optimization of the probe's bend angle. The possible probe spacing and change of "2" Ming's micro-probes placed on the film :: Figure. = Ming Zhi's method of making vertical micro-probes. Ming's manufacturing probes Contact force sensing; = t procedure for making the upper and lower guide covers, and the invention of the probe card assembly process. Figure No. 1 Vertical probe card 2 Horizontal probe 3 Silver glue 4 Pressure sensor 10 Thin film substrate with piezoresistance built in 11 Probe array 12 Upper guide cover 13 Lower guide cover 1 4 Ball grid array (BGA) structure with LTCC or BT / glass substrate 15 Printed circuit board (PCB) 1 6 Space partition 1 7 Fixing screw 18 L-shaped metal clamp 1 9 Fixing clamp 第 10 页
569017 五、發明說明(6) 2 0矽基板 21 Pl(polyimide) 22晶種層(Cu、Cr ) 23 光阻 2 4 去光阻液 2 5去P I光阻液 26 光罩 2 7紫外線 2 8離子植入棚或磷 29氧化層 3 0薄膜導線金屬層 31 Si02 32探針接觸用金屬 33感應耦合電漿(ICP) 34 深離子反應蝕刻機(deep-RIE) 如圖二所示,本發明的探針卡1,其主要的組件係包 含:(1)可選擇性裝置的内設壓阻的薄膜基板1 〇 ;( 2 )探針 陣列11;(3)上導蓋12; (4)下導蓋13;(5)含LTCC或BT/ 玻璃基板的球栅陣列(BG A)結構1 4 ; ( 6 )印刷電路板(PC B)569017 V. Description of the invention (6) 2 0 Silicon substrate 21 Pl (polyimide) 22 Seed layer (Cu, Cr) 23 Photoresist 2 4 Remove photoresist liquid 2 5 Remove PI photoresist liquid 26 Photomask 2 7 UV 2 8 Ion implantation booth or phosphorus 29 oxide layer 3 0 thin film wire metal layer 31 Si02 32 metal for probe contact 33 inductively coupled plasma (ICP) 34 deep-RIE etching machine (deep-RIE) As shown in FIG. 2, the present invention The main components of the probe card 1 include: (1) a piezoresistive thin-film substrate 1 with optional devices; (2) a probe array 11; (3) an upper guide cover 12; (4) Lower guide cover 13; (5) Ball grid array (BG A) structure with LTCC or BT / glass substrate 1 4; (6) Printed circuit board (PC B)
1 5 ; ( 7 )空間隔板 1 6 ( s p a c e r ) ; ( 8 )固定螺絲 1 7 ; ( 9 ) L 型金屬夾具1 8 ;(1 0 )固定夾具1 9。内設壓阻的薄膜基板 1 0 ’主要的功能有提供探針受力的大小,將探針與晶圓上 的銲墊的電氣訊號轉換到測試儀器的功能。 %1 5; (7) Space partition 16 (s p a c e r); (8) Fixing screws 1 7; (9) L-shaped metal clamps 1 8; (1 0) fixed clamps 19. The main function of the piezoresistive thin-film substrate 10 ′ is to provide the force of the probe and convert the electrical signals of the probe and the pads on the wafer to a test instrument. %
第11頁 569017 五、發明說明(7) 採針陣列11,設置於球柵陣列(BGA)結構14之j 針底端直接壓合在球栅陣列(BGA)結構14銲墊上上;探 覆晶球柵陣列(fliP-chip BGA)封裝方式,j木用 =轉換至球柵陣列銲塾’探針中端具有適當的‘針線 T端在與待測1C㈣塾或凸塊接觸日寺,可 A使其 大的彈性。 又應而有較 膜其f針陣列11亦可設置於薄膜基板之,上,探針底金山盘售 二基㈣上的壓阻緊密接觸,採用一般球柵陣c i二!缚膜基f10視同一般裸晶,薄膜基板10上的探針接 鑤^監阻接線藉由打線轉換至球栅陣列的銲墊。探、卜 12:縮可藉由另一設置的上下導蓋來引導。上,下: ,分設於空間隔板16 (spacer )之兩端,妒 針陣列的空間,且上,T導蓋各設有穿二成列一, :引導ϋ陣列之i,使探針露出導蓋約50~"2 5 0um,以作 上下變形的通道,上導蓋12主要是讓探針二 直2變形時滑動,…蓋13則是將探 、 ί探::::=柵陣:(⑴一h…封褒方;,Page 11 569017 V. Description of the invention (7) The needle picking array 11 is arranged on the bottom end of the j pin of the ball grid array (BGA) structure 14 and directly pressed on the pad of the ball grid array (BGA) structure 14; Ball grid array (fliP-chip BGA) packaging method, j wood = switch to ball grid array soldering probe 'middle end of the probe has the appropriate' needle line T end is in contact with the 1C㈣ 塾 or bump to be tested, can be A Make it big elastic. In addition, the f-pin array 11 can also be installed on the thin-film substrate. The piezoresistance on the base of the probe is based on the piezoresistive close contact. The general ball grid array ci is used! As with the conventional bare crystal, the probe connection on the thin film substrate 10 is switched to the bonding pad of the ball grid array by wire bonding. Tan, Bu 12: Shrink can be guided by another upper and lower guide cover. Upper and lower:, are located at the two ends of the space partition 16 (spacer), the space of the needle array is jealous, and the upper and lower T guide covers are respectively arranged to pass through two rows and one: guide the i of the array to make the probe The guide cover is exposed for about 50 ~ 2 0 0um, which is used as a channel for up and down deformation. The upper guide cover 12 is mainly used to slide the probe when it is deformed 2... The cover 13 is used to detect: :: = Grid array: (⑴ 一 h ... 封 褒 方;,
列(BG A ) 1 4、纟而/^汁小轉大的連接線路於球栅陣 上,即可將域丨t,衷置在印刷電路板(PCB) 15之 (PCB) 1 5的大接绩列(BGA)結構丨4接線轉換至印刷電路板 如第=H % 而大接線即可直接連接到測試儀器, 板,;:ϊ 印刷電路板(PCB)15係用來固定薄膜基 列(bgA)1:圖:示。以及將薄膜基板的接點,藉由球柵陣 歹1⑽)Η糟由覆晶封裝(FUp_Chip)轉換至印刷電路車Column (BG A) 1 4. When the connection line is small and large on the ball grid array, the field can be placed in the printed circuit board (PCB) 15 (PCB) 1 5 BGA structure 丨 4 wiring conversion to printed circuit board such as = H% and large wiring can be directly connected to the test instrument, board ,: ϊ Printed circuit board (PCB) 15 is used to fix the film base (bgA) 1: Figure: Shown. And the contact of the thin film substrate is converted from a flip chip package (FUp_Chip) to a printed circuit car through a ball grid array (歹 1⑽).
第12頁 569017 五、發明說明(8) 板(PCB )的大接線’而大接線直接就可以連挺$丨 器,如第五圖所示。 接到測試儀 藉由L型夾具〗8配合固定螺絲〗7,將球柵陣 構14與印刷電路板(PCB)15接合完畢的組件和探U15GA) ^ 結合,L型夾具18具有定位凹槽,可以很精確的件相 定在球柵陣列(BGA)結構14或薄膜基板1〇上面。木針固Page 12 569017 V. Description of the Invention (8) Large wiring of the PCB (PCB) and the large wiring can directly connect the $ 丨 device, as shown in the fifth figure. After receiving the tester, the L-shaped clamp 18 with the fixing screws 7 combined the ball grid array 14 with the printed circuit board (PCB) 15 and the U15GA). The L-shaped clamp 18 has a positioning groove. It can be precisely positioned on the ball grid array (BGA) structure 14 or on the thin film substrate 10. Wooden needle solid
【探針陣列設計原則J 本發明之垂直式探針的結構 可依間距(pitch ),超越形辫 二、·回斤不,探針設計 (一ac"orce),在;=(,⑽),接觸力 定探針的幾何形狀與尺寸垂4今許的弹性限之下,來決 式,如第七圖所示,中段彎j式楝針的設計有报多種形 率的圓弧或其組合,使其| :型式,可為不同角度與曲 探針間距,舉其中一 ^較大的柔順度與較小的容許 下: 采討,探針結構,其關係如 以卡氏第二定理(Cas theorem )推導出的單位 § ian〇,s second 來解析探針結構的垂直、〉(Unit-load method ), 5 ’公式(1 )如下。 7里問題,探針超越變形量為 569017[Probe array design principle J The structure of the vertical probe of the present invention can be determined by pitch, beyond the shape of the braid II. · Return to weight, probe design (a ac " orce), in; = (, ⑽) The contact force determines the geometry and size of the probe to fall below the limit of elasticity. As shown in the seventh figure, the design of the middle curved j-type needle has a circular arc with various shapes or Combination, making it |: type, which can be different angles and curved probe distances, one of which is greater flexibility and smaller allowance: the structure of the probe, the relationship is as the second theorem of Karst (Cas theorem) The unit § ian〇, s second is used to analyze the vertical of the probe structure, and (Unit-load method), 5 ′ formula (1) is as follows. For the 7-mile problem, the amount of deformation beyond the probe is 569017
__ FL 23 cos 2 Θ El (h + L2 sin Θ + Lx)__ FL 23 cos 2 Θ El (h + L2 sin Θ + Lx)
例題一: 一探針長度·· 3mm,Ll=2mm,L2 = 0· 79,4mm,0 =49 〇8 h-〇.2mm,F = 4.7g,探針剖面 a*a = 〇.〇4*0 04 2i〇GPa,I=a4/12=u44/12=213*1G_7mm4 E= ement type · Beam 2D elastic 固定 及解 針的 (1 : 知, 中應 像尖 積、 大小 維持 形, 角處Example 1: One probe length: 3mm, L1 = 2mm, L2 = 0.79,4mm, 0 = 49 〇8 h-〇.2mm, F = 4.7g, probe section a * a = 〇.〇4 * 0 04 2i〇GPa, I = a4 / 12 = u44 / 12 = 213 * 1G_7mm4 E = ement type · Beam 2D elastic (1: Know, the middle should be like a sharp product, the size should be maintained at the corners
而邊界條件,限制D點僅能做UY方向的移動,且將A合 ’如第八圖所示,而解析值及模擬值得比較。經 ::結的比較之後’ τ以得知("式是否適用在:果探 、、、。構設計上,舉例題一來做模擬分析及將數值代入 式 ^過整理可以得,如圖八所示,從圖中可以 解析值和模擬值的誤差大約有4〜5%左右。 于 2針彎角處,設計成圓弧形的主要目的是為了避 ,當探針受力時,應力會分佈在圓弧線上,而不^ 一樣應力都集中尖角的一處。假設探針受力、However, the boundary condition restricts the point D to move only in the UY direction, and A 'is shown in the eighth figure, and the analytical value and simulation are worth comparing. After the comparison of the :: knot, τ is used to know whether the "" formula is applicable to: fruit detection, ..., structure design, for example, to do a simulation analysis and substituting numerical values into the formula ^ and finishing, as shown in the figure As shown in Figure 8, the error between the analytical value and the analog value in the figure is about 4 to 5%. At the 2-pin bend, the main purpose of the arc design is to avoid the stress when the probe is stressed. It will be distributed on the arc line, but the stress is concentrated at the sharp corner.
J力固長⑨、楊氏係數相同的情況之下,僅有R 二力二右R愈大,則愈能避免應力集中,i變形量可 …疋里,如第九圖所示。由ANSYS 5 · i分 從圖形當中可以很明顯看 ' 。 臂取大應刀岣發生在探針_In the case of J force solid long 固 and Young's coefficient, only R 2 force 2 right R larger, the more stress concentration can be avoided, i deformation can be… 疋, as shown in the ninth figure. From ANSYS 5 · i points It can be clearly seen from the graph. Arm take big response knife 岣 occurred in probe _
第14頁 569017Page 14 569017
五、發明說明(ίο) 例題二: 探針總長=7· 5mm,Ll = 5mm,L2:6· 5mm,0 :49· 〇8。 h = 0· 85mm (導板處) F=0.005N ,Cross-section area=〇.〇4*0.04 um2 2 1 0 GpaV. Description of the Invention (ίο) Example 2: The total length of the probe = 7. 5mm, Ll = 5mm, L2: 6. 5mm, 0: 49 · 08. h = 0 · 85mm (at the guide plate) F = 0.005N, Cross-section area = 〇.〇4 * 0.04 um2 2 1 0 Gpa
形 2D 定I 、 · 状狄休对彎角附近的應力的分佈个主 息ΐ —,元素形式(Element type)選擇Bp 邊界條件限制D點禮处— 谭ΰ e a丨The shape 2D definition I, · shape Dixiu's main information on the stress distribution near the corner ΐ —, the element type (Element type) selects Bp boundary conditions to limit the point D point — Tanΰ e a 丨
。 2僅犯在UY的方向滑動,而A點為固 經過模擬之後 ^ 1mm,可以得到探針織^將板針的彎角半徑從R = 〇· 2mm〜R二 十圖所示。 專角袁大應力的最佳化收斂曲線如第 下表是不同探針 截面、不同探針持料、又(3^4·5, 6, 7.5mm)、不同探針 據此來設計所需的抻$下’各許的接觸力與超越形變,可 k針尺寸與材料等。. 2 Only commit sliding in the UY direction, and point A is solid. After simulation ^ 1mm, we can get the knitting ^ The radius of the corner of the plate needle is from R = 〇 · 2mm ~ R as shown in the figure. The optimized convergence curve of the special angle Yuan Da stress is shown in the following table. Different probe sections, different probe holding materials, and (3 ^ 4 · 5, 6, 7.5mm), different probes are designed according to this. The 许 $ 下 'of each contact force and transcendence deformation can be pin size and material.
569017 五、發明說明(π) 探針長度 mm 探##料 探針裁面(um%m) 接觸力(g) 超越彤變(um) 鎢 20*20 0324 131 40*40 2.37 623 50*50 4.8 49 60*60 S3 40.6 80*80 18.9 322 100*100 3? 25.7 鈹銅 20*20 0.41 91 40*40 3.04 43.4 50*50 5J7 34.5 60*60 9.75 28.4 S0*S0 23.5 22.S 100*100 44.2 18 鎳 20*20 1.77 36.4 40*40 13 17.1 50*50 24.8 14.4 60*60 41.S 122 80*80 101 9,2 100*100 189 7.6 (b569017 V. Description of the invention (π) Probe length mm Probe ## Material probe face (um% m) Contact force (g) Transcendence (um) Tungsten 20 * 20 0324 131 40 * 40 2.37 623 50 * 50 4.8 49 60 * 60 S3 40.6 80 * 80 18.9 322 100 * 100 3? 25.7 Beryllium copper 20 * 20 0.41 91 40 * 40 3.04 43.4 50 * 50 5J7 34.5 60 * 60 9.75 28.4 S0 * S0 23.5 22.S 100 * 100 44.2 18 Nickel 20 * 20 1.77 36.4 40 * 40 13 17.1 50 * 50 24.8 14.4 60 * 60 41.S 122 80 * 80 101 9,2 100 * 100 189 7.6 (b
第16頁 569017 五、發明說明(12) 探針長度4. 5 m m 探針材料 探針截面(um%m) 接觸力(g) 變形量(um) 20*20 L2 287 40*40 8·8 139 50*50 17,9 116 60*60 29.4 93.2 80*S0 662 6S 100*100 131 56 鉉鋼 20*20 0.27 201 40*40 2.05 97 50*50 4.2 8.2 60*60 6.86 65-2 80*80 154 47.4 100*100 30.6 39.4 錢 20*20 0.22 81 40*40 1,65 39.5 50*50 3.36 33,2 60*60 5.35 26 80*S0 13 20 100*100 25.9 17 第17頁 569017 五、發明說明(13) 探針長度6mm 探針#料 探針截面(um*um) 接觸力(g) 變形董(um) 鑛Ϊ 20*20 0.S9 521 40*40 6.94 257 50*50 133 203 60*60 22,6 167 80*80 52,4 125 100*100 98.6 97.6 銨鋼 20*20 0,208 365 40*40 1.61 179 50*50 31 142 60*60 5.27 117 80*80 12.2 86.7 100*100 23 68.3 !桌 20*20 0.16 142 40*40 1.27 71 50*50 2.47 57.3 60*60 4.25 48 80*80 9.5 34 100*100 193 29 匪驪__ 第18頁 569017 五、發明說明(14) 探針長度7. 5mm 佳 探針封料 揲針薇面(um%m) 接觸力(g) 變形量(um) 鎢 20*20 0.71 810 40*40 5.42 390 50*50 10:7 317 60*60 17.5 251 80*80 447 205 100*100 63 181 鍵鋼 20*20 0.16 547 40*40 L26 272 50*50 2.5 222 60*60 43 185 80*80 10.4 143 100*100 147 127 鎳 20*20 0.12 208 40*40 1.03 111 50*50 1.9 87.7 60*60 3.4 74.2 80*80 8.2 57.2 100*100 1L8 51.6Page 16569017 V. Description of the invention (12) Probe length 4.5 mm Probe section of probe material (um% m) Contact force (g) Deformation (um) 20 * 20 L2 287 40 * 40 8 · 8 139 50 * 50 17,9 116 60 * 60 29.4 93.2 80 * S0 662 6S 100 * 100 131 56 Yangang 20 * 20 0.27 201 40 * 40 2.05 97 50 * 50 4.2 8.2 60 * 60 6.86 65-2 80 * 80 154 47.4 100 * 100 30.6 39.4 Money 20 * 20 0.22 81 40 * 40 1,65 39.5 50 * 50 3.36 33,2 60 * 60 5.35 26 80 * S0 13 20 100 * 100 25.9 17 Page 17569017 V. Description of the invention (13) Probe length 6mm Probe # material Probe cross section (um * um) Contact force (g) Deformation director (um) Mine Ϊ 20 * 20 0.S9 521 40 * 40 6.94 257 50 * 50 133 203 60 * 60 22,6 167 80 * 80 52,4 125 100 * 100 98.6 97.6 Ammonium steel 20 * 20 0,208 365 40 * 40 1.61 179 50 * 50 31 142 60 * 60 5.27 117 80 * 80 12.2 86.7 100 * 100 23 68.3! Table 20 * 20 0.16 142 40 * 40 1.27 71 50 * 50 2.47 57.3 60 * 60 4.25 48 80 * 80 9.5 34 100 * 100 193 29 Bandit__ Page 18569017 V. Description of the invention (14) Probe length 7 . 5mm good probe sealing material 揲 needle face (um% m) contact force ( g) Deformation (um) tungsten 20 * 20 0.71 810 40 * 40 5.42 390 50 * 50 10: 7 317 60 * 60 17.5 251 80 * 80 447 205 100 * 100 63 181 key steel 20 * 20 0.16 547 40 * 40 L26 272 50 * 50 2.5 222 60 * 60 43 185 80 * 80 10.4 143 100 * 100 147 127 Nickel 20 * 20 0.12 208 40 * 40 1.03 111 50 * 50 1.9 87.7 60 * 60 3.4 74.2 80 * 80 8.2 57.2 100 * 100 1L8 51.6
d 或d or
C 列 Lhr 針探 的 C式 粒型 晶陣 的矩 上度 圓密 晶高 —MJ. E— 湏作 待製 於要 由若 不 度 面 共 的 身 本 針探 量 考 要 需Column C, Lhr Needle Probe, Type C Grain Array, Momentum Degree, Roundness, Dense Crystal Height —MJ. E— Operation is to be determined by the need for physical probe measurement if the surface area is different.
第19頁 569017 五、發明說明(15) 之間是否會相互 立一個規範,其 多大’在模擬時 Η 圖圖形上的 容許的垂直變形 (Probe pitch : 量與探針間距的 P 二 α · Δ 垂直式彈簧 1 OOum,寬度20- llOum,可以含; 突出點,用於量 【接觸力感测器 在施行上, 上’以提供探針 變化不等於零, 多,各探針不會 限(疲勞壽命),Page 19 569017 V. Explanation of the invention (15) Whether there will be a norm between each other, and how big is it during simulation Η The allowable vertical deformation on the graph (Probe pitch: the amount and the probe pitch P 2 α · Δ Vertical spring 1 OOum, width 20-llOum, can be included; protruding points, for measuring the amount of [contact force sensor on the implementation, to provide probe changes not equal to zero, many, each probe will not be limited (fatigue life),
碰觸,造成短路,所以在製造之前必須訂 規範是了解晶粒或I c本身的面高低落差有 ,可僅以中間的探針接觸來做假設,由第 曲線,可以得到關係式(2 )。表示探針 量(Deformation) △ 6及探針間距p >的公式’其中a為常數,表示探針變形 比例關係: ,The contact will cause a short circuit, so the specification must be established before manufacturing to understand the surface height difference of the crystal grain or I c itself. It can be assumed only by the middle probe contact. From the third curve, the relationship (2) can be obtained. . A formula representing the amount of the probe (Deformation) △ 6 and the distance between the probes p > ′ where a is a constant, which indicates the deformation ratio of the probe:,
铋針,基本上其尺寸,大約為深度2 0 - l〇〇um,長度3〇〇〇 —7 5 0 0um,探針間距3〇- Γ突出點,用於量測銲墊,也可以不包含 測凸塊。 I二f t針置於内設壓阻的薄膜基板1 0 ^最+丨’探針在受力10g下,其壓阻 平均,薄膜變形量大致相差不 不;全強度,也有足夠的疲勞 °、/3矽的降伏強度(70MPa)。設 569017 五、發明說明(16) 計可調變數如薄膜厚度,使用P— type的壓阻· 壓阻,使壓阻變化均一的後級處理電路等等。2 n type、 本發明之微探針置於薄膜上的排列方式,★ ^ 示,其中探針與壓力感測器之間的配置,基本弟,了,二 支探針配合一個可受力變化的薄膜壓阻, 亡可以1 別於其基柱(post)下設有一壓阻,並共用另=T t 1辦 化的薄膜壓阻,成為一橋式電路,以量測壓卩I =不文欠 小;或一支探針配合完整四個受力變化的薄 又力的 每一探針個別於其基柱(post)下設於四個阻,亦/ 成為一橋式電路。 1U 4 Μ壓阻之間, 至於探針與薄膜配置的方式,可以多 薄膜上;或一支探針設於一個薄膜上。若間距木大+共汉於 l』〇^m ’則可以使用一穴一針’如第十二圖⑷所於示·若間 ;丨於70-12 Oum,則可以使用一穴二針,如第 ’ *二,一八四針所示;若間距在70關以下,則可以使用一 八一針或一穴九針。如第十二圖(c)所示。 【較佳實施例】Bismuth needles, basically their size, are about 20-100um in depth, 3000-7500um in length, and the probe pitch is 30-Γ protruding points. Contains bumps. The I 2 ft pin is placed on a thin-film substrate with built-in piezoresistance. The probe at 10 g has a piezoresistance average, and the deformation of the film is about the same under a force of 10g; full strength, and sufficient fatigue °, / 3 silicon drop strength (70MPa). Design 569017 V. Description of the invention (16) Calculate adjustable variables such as film thickness, use P-type piezoresistance and piezoresistance, post-processing circuit to make piezoresistance change uniform, etc. 2 n type. The arrangement of the microprobes on the film is shown in the figure. ^ The arrangement between the probe and the pressure sensor is basically the same. The two probes can be changed with one force. The thin film piezoresistance can be different from a piezoresistor under its base post and shares another thin film piezoresistance = T t 1 to become a bridge circuit to measure the pressure 卩 I = not a text It is not too small; or one probe cooperates with a complete set of four thin and force-changing forces. Each probe is individually set at four resistances under its post, and also becomes a bridge circuit. Between 1U and 4M piezoresistors, as for the configuration of the probe and the thin film, multiple thin films can be used; or one probe can be provided on one thin film. If the distance between the big wood and the common Han is l′ 〇 ^ m ', you can use one hole and one needle', as shown in Figure 12⑷Wujian; 丨 70-12 Oum, you can use one hole and two needles, As shown in the '* 2, 184 stitches; if the distance is below 70 levels, you can use 181 stitches or 9 points in one hole. As shown in Figure 12 (c). [Preferred embodiment]
、 以垂直式探針的製作為主軸來說明整個探針卡的實施 過程,以下為其實施流程。 貝也 =程一使用多層式厚光阻電鍍製出多組垂直式探針陣 清L程二使用微機電製程製作上下導蓋。5. The implementation process of the entire probe card will be explained with the production of the vertical probe as the main axis. The implementation process is as follows. Bei Ye = Cheng Yi uses multilayer thick photoresist plating to produce multiple sets of vertical probe arrays. Qing L Cheng II uses a micro-electro-mechanical process to make upper and lower guide covers.
第21頁 569017Page 569017
流程三使用微裝配及陽極結合等封裝技術將上下 多組垂直式探針陣列結為一體,成為探針模组。盍〃 流程四製作LTCC或BT/玻璃基板的球柵陣列(BGA)結構 14,或另外使用1C製程製作壓阻薄膜基板1〇。 流程五將基板的球栅陣列(BGA)結構14基板與薄膜基板1〇 結合,並引線到印刷電路板(PCB)15以及固定於印刷電路 板(P C B )’再與流程二的探針模組一起叙位接合,完 針卡組合。 木The third process uses packaging technologies such as micro-assembly and anode bonding to integrate the upper and lower sets of vertical probe arrays into a probe module.盍 〃 Process 4: Fabricate ball grid array (BGA) structure 14 of LTCC or BT / glass substrate, or use 1C process to make piezoresistive thin film substrate 10. Process 5 combines the substrate's ball grid array (BGA) structure 14 substrate with the thin film substrate 10, and leads to the printed circuit board (PCB) 15 and fixed to the printed circuit board (PCB) ', and then with the probe module of process 2 Position and join together to complete the card combination. wood
以下所示的較佳實施例,其中所使用的電鍍金屬,以 鎳為主的合金’如鎳錄或鎳錳,但配合電鍍晶種層亦可為 鎳、鎳合金,鎢、嫣合金,銅、銅合金等。 【探針製作實施例】 本發明之製作垂直式微探針的程序,如第十三圖所示。 步驟一:第十三圖(a )所示,首先在基板2〇上,先旋塗 一層約3 //m PI (p〇lyimide)21,作為未來整個探斜 脫離基材的犧牲層(Sacrificial layer)。 步驟二The preferred embodiment shown below, in which the electroplated metal used is a nickel-based alloy such as nickel or nickel-manganese, but the plating seed layer can also be nickel, nickel alloy, tungsten, titanium alloy, copper , Copper alloy, etc. [Probe making example] The procedure for making a vertical microprobe according to the present invention is shown in FIG. Step 1: As shown in the thirteenth figure (a), firstly spin-coat a layer of about 3 // m PI (p〇lyimide) 21 on the substrate 20 as a sacrificial layer for the entire oblique release from the substrate in the future (Sacrificial layer). Step two
第十二圖(b)所示’在第一層PKpoiyimide^l 上減;鍵晶種層22 (Seeding layers)厚度(Cu 1〇〇 〇 A 、Cr 2 0 0A )。 步驟三:第十三圖(c )所示,旋塗厚度約4 5 #爪厚光阻2 3 在晶種層22上,第一轉速加速度為1 5 0 0 rpin,第 二轉速為3 0 0 Or pm維持10秒,進行5分鐘的軟烤,As shown in FIG. 12 (b), ′ is reduced from the first layer PKpoiyimide ^ 1; the thickness of the bond seed layer 22 (Seeding layers) (Cu 100A, Cr 2 0 0A). Step 3: As shown in the thirteenth figure (c), the spin coating thickness is about 4 5 #claw thickness photoresist 2 3 On the seed layer 22, the acceleration of the first rotation speed is 1 50 0 rpin, and the second rotation speed is 3 0 0 Or pm for 10 seconds and soft roast for 5 minutes,
第22頁 569017 五、發明說明(18) 以第 步驟四 步驟五 步驟六 步驟七 層光罩曝光出探針的形狀,顯影120秒。 經過顯影將探針11的形狀顯現出來。之後進行 鎳、鎳合金(mckel alloy)的電錢高出光阻約 2um,再經拋光處理使得厚度到達 第十三圖(d)所示,在研磨後的表: 約50#m光阻23,成為第一層探 的中介層。 T 一弟一層抓針 重複步驟二到步驟五可以 步驟八 第十三圖(e)所示 得到第二層探針結構 第十三圖(f )所示: 得到第三層探針結構 第十三圖(g )所示,势藉$ 度考量下,可以針對多層探/采八針陣列複雜 後再進行探針組装的工作。焉軛分層製作,之 第十三圖(h )所示,以耖— 且製作合適的遮罩,並選y刻技術(rie), CC14 + 02可以蝕刻光阻及 =§的蝕刻反應氣體 尾部分蝕刻出來。 U Γ ’將探針的頭、 重複步驟二到步驟五可以 步驟九·第十二圖(i)所示 在探針的頭、尾處 露懸空。 ,滴些許的去光 使各層探針頭 阻液2 4去除 尾處,都裸 步驟十:第十三圖U )所示,選擇PI 21 25,然後將晶圓置Λ其中的去? 1光阻液 基板上脫離,即可得到夕:整個探針組能從 J相田夕的探針1 1 〇 569017 五 、發明説明(19) 【壓力感測薄膜製作貫施例】 本發明之製作壓力感測薄膜的程序,如第十四圖所 示。此部份的技術細節為習知技術,可參考―^ Madou所 f 的 Fundamental of Microfabrication (2002)第四 章,f i gure 4· 1 ° , 步驟一 步驟二 第十四圖(a )所示,首先在在矽基板2 〇上,然 後旋塗一層光阻23利用光罩26,曝光顯影。如第 ^圖)所示,接著離子植入硼或磷28作為 壓阻’回火並沉積一氧化層2 9。Page 22 569017 V. Description of the invention (18) Step 4 Step 5 Step 6 Step 7 Expose the shape of the probe with a layered mask and develop it for 120 seconds. The shape of the probe 11 is revealed by development. After that, the electricity of nickel and nickel alloy (mckel alloy) is about 2um higher than the photoresist, and then polished to make the thickness reach to the thirteenth figure (d). The table after grinding: about 50 # m photoresist 23, Become the first layer of intermediary. T One step by step, grab the needle and repeat steps 2 to 5 to get the second layer probe structure shown in Figure 13 (e) in step eight. Figure 13 (f) shows the third layer probe structure. As shown in the third figure (g), considering the degree of potential, the probe assembly can be performed after the multi-layer probe / acquisition eight-pin array is complicated. The yoke is produced in layers, as shown in the thirteenth figure (h), with 耖 — and a suitable mask is made, and the y-engraving technique (rie) is selected. CC14 + 02 can etch photoresist and = § etching reaction gas. The tail is etched. U Γ ′ Repeat step 2 to step 5 for the head of the probe. Step 9 · Figure 12 (i) shows that the head and tail of the probe are suspended. With a little bit of light removal, the probe heads of each layer are removed, and the liquid barrier 2 4 is removed. The tail is bare. Step 10: As shown in Figure 13), select PI 21 25, and place the wafer in it. 1 The photoresist liquid substrate can be detached, and then the night can be obtained: the entire probe set can be from the probe of J Xiang Tianxi 1 1 〇569017 V. Description of the invention (19) [Exemplary embodiments of the production of a pressure sensing film] Production of the present invention The procedure of the pressure sensing film is shown in Fig. 14. The technical details of this part are known techniques, please refer to Chapter 4 of Fundamental of Microfabrication (2002) by Madou, figure 4.1 °, step one step two fourteenth figure (a), First, a photoresist 23 is spin-coated on a silicon substrate 20 and then a photomask 26 is used for exposure and development. As shown in Fig. 2), boron or phosphorus 28 is then ion-implanted as a piezoresistance to temper and deposit an oxide layer 29.
乐卞四圖(c )所示 宽你兩b广 / —彳工乳化層2 y開-且層28,金屬化並微影蚀刻定義壓 = 之後,接著再上-層⑽"卜^ 用光罩顯影蝕刻絕緣層s i 〇 2 31 ^ ^ 阻接線的貫穿孔顯露出來,’使茜要連接肩 32顯影蝕刻定義出探針的線路 上一層金屬 30,探針11是之後裝配接觸C的線路 驟所產生。 置5兒明而非此 步驟三 :十:圖(d )戶斤示,•著由背 直到薄骐厚度為15_4〇um, Q蝕刻矽基材, 探針11是之後裝配接觸的位置成,薄膜製作程序, 產生。 呪明而非此步驟所As shown in the fourth figure (c), the two layers are wide and the masonry emulsion layer is 2 y open-and layer 28, metallized and lithographically etched to define the pressure =, and then the upper-layer layer is used. The cover develops and etches the insulating layer si 〇 2 31 ^ ^ The through hole of the resistance line is exposed, 'makes Akane to connect the shoulder 32. The development and etch define a layer of metal 30 on the line of the probe, and the probe 11 is a line that is subsequently contacted with C. Produced. Set 5 points instead of this step. Three: Ten: Figure (d) shows the household weight. • From the back to the thickness of the thin plate is 15_4um, Q etch the silicon substrate. The probe 11 is the position of the assembly contact afterwards. The film making process is produced. Tong Ming is not
569017 五、發明說明(20) 【上下導蓋製作實施例】 針固定導ί f ,13的製作應用微機電技術’顯影#刻探 it以:的探針孔徑,製作步驟如以下所示: 〃 氧化沬在矽基板2〇上’送入氧化爐管内,以乾式 旋塗/屉Γ矽基板正反面氣化成Si 02 31,然後 方疋塗一層光阻23,選 仪 …光顯影,㈣出所需的孔徑光罩26,曝 少”.之後再利用感應耦合電漿(1凹槽。 步驟 應蝕刻機(deep-RIE) 3丄礼P) 33或深離子反 如第十五圖(a )所示。貫施穿孔深度約4〇Um, :在矽基板背部濕蝕刻—個 侍原先預設的探針導孔順利:f且去除光阻,使 的製作,如第十 、利路出,完成上下導蓋 步驟四mt圖(b)所示。 為求侍更加準確的探針 上下導蓋的位置,正杯 下導蓋,蝕刻時配置 完成基板切割步驟,二於上與下的位置,一旦569017 V. Description of the invention (20) [Example of making the upper and lower guide caps] The production of the needle fixed guide f, 13 is applied by micro-electromechanical technology 'Developing #etching it with: the probe aperture, the manufacturing steps are as follows: 〃 The hafnium oxide is sent into the oxidation furnace tube on the silicon substrate 20, and the front and back surfaces of the silicon substrate are dry-spinned / painted. The silicon substrate is vaporized into Si 02 31, and then a photoresist 23 is coated on the side. Required aperture mask 26, less exposure ". Then use the inductive coupling plasma (1 groove. The step should be an etching machine (deep-RIE) 3 salute P) 33 or deep ion as shown in Figure 15 (a) The depth of the perforation is about 40 Um .: Wet etching on the back of the silicon substrate-a probe guide hole preset by the original is smooth: f and the photoresist is removed to make the production, such as the tenth, good way out, Complete the step 4 of the upper and lower guide cover as shown in Figure 4 (b). In order to find out the position of the upper and lower guide cover of the probe more accurately, the lower cover of the main cup is configured to complete the cutting step of the substrate during the etching. once
1 2,1 3,如第十五圖/ U得到準確的上下導蓋 圖。 回C)所示為上下導蓋上視 铋針卡裝配程序實施例】 六圖所示 本’X明之探針卡裝配過程,如第 569017 五、發明說明(21) 步驟-:第十六圖(a)所示 的三軸向定位器用雙程科技公司所代理 將探針組吸取,把 oy*stick positioner) 中,若欲得f,丨—彳針懸空裸露處插入下導板 配4個川2的探針矩J車1針卡構造,得裳 組的上、下針,,、趣十a才此疋成。將所有的探針 步驟二:第十六圖“广所_路#分裝配在上、下導板上。 導板中LV* 封裝後的結構形成上、下 步驟 連接在一起。璃’再利用陽極接合法將此結構 所有的探針接合處滴上些許的固定膠將 步驟四•第+丄闰fd、 一 土认二圖(d )所示,利用選擇式濕式蝕刻法, /f、光阻23及晶種層22 (Cu、Cr )。 乂驟五:第十六圖(e) ’將完成封裝後的探針1 2, 1 3, as shown in the fifteenth figure / U to get accurate upper and lower cover map. Back to C) shows an example of the assembly procedure of the bismuth needle card on the upper and lower guide caps.] Figure 6 shows the assembly process of the probe card of this' X Ming, as shown in Figure 569017. 5. Description of the invention (21) Step-: Figure 16 The three-axis positioner shown in (a) is used by Shuangcheng Technology Co., Ltd. to pick up the probe set, and if oy * stick positioner is to be obtained, f, the needle is suspended and exposed to the lower guide plate with 4 Gechuan 2's probe moment J car 1 needle card structure, the upper and lower needles of the skirt group, and fun ten a. Assemble all the probes in step two: the sixteenth figure “广 所 _ 路 #” is assembled on the upper and lower guide plates. The structure of the LV * package in the guide plates is connected together in the upper and lower steps. Anodic bonding method drips a little fixing glue on all the joints of the probes of this structure. As shown in step (4), (+) fd and (d), using the selective wet etching method, / f, Photoresist 23 and seed layer 22 (Cu, Cr). Step 5: Figure 16 (e) 'The packaged probe will be completed
,力感測器4來做結合,而此壓力感測器可為^ 穴一針、一穴二針或是一穴多針的型式,再 球柵陣列(BGA) 14將微小的電路擴大到印刷電j用 板(PCB) 1 5上,再透過兩個L型的金屬夾具18, 整個探針模組固定在印刷電路板(PCB)丨5上。將 【實施例】 第26頁 569017The force sensor 4 can be combined, and the pressure sensor can be ^ 1-hole, 2-hole or 1-hole multi-pin, and the ball grid array (BGA) 14 expands the tiny circuit to The printed circuit board (PCB) 15 is then passed through two L-shaped metal fixtures 18, and the entire probe module is fixed on the printed circuit board (PCB). [Example] Page 26 569017
矛」用本發明所提供的製程 製成被動 或主動微探針卡,探針材料可 τ的 τ —、處八今, 姑# i目# ^ , 1刊n j u疋鋼,或鎳,或鎳合金, 技術規格可達成如下 1·鬲密度:探針數> 250 ;探針間距<4〇um 2 ·共面性< 5 u m 3·楝針尖端:i5-20um 4 ·探針陣列> 1 5 X 1 5 5 ·可測元件數目> 1 6·探針柔順度 pin compliance:>75um 7·可適用於金屬銲墊或凸塊 如此完成的探針卡,具有以下優點 1·成本效益高2.易於與印刷電路板(PCB)結合3.生命週 期長4.適合目前市售的探針台 實施例一 記憶體測試 裸晶尺寸:7.81 mm X 4.2 mm '次測試晶片數:3 2 每一晶片的銲墊數:50 銲墊尺寸:80 um X 80 um 輝墊距離(pitch) : 100 um 銲墊排列方式:兩旁各2支 中間4 6支 測試機台:A d v a n t e s t T 5 3 3 5The "spear" is made into a passive or active micro-probe card using the process provided by the present invention. The probe material can be τ τ, 八, 今, # # i 目 # ^, 1 issue nju 疋 steel, or nickel, or nickel Alloy, the technical specifications can be achieved as follows: 1. Density: Number of probes> 250; Probe pitches <40um 2 · Coplanarity <5 um 3 · Needle tip: i5-20um 4 · Probe array > 1 5 X 1 5 5 · Number of measurable components > 1 6 · Probe compliance pin compliance: > 75um 7 · Suitable for probe cards with metal pads or bumps thus completed, with the following advantages 1 High cost-effectiveness 2. Easy to combine with printed circuit board (PCB) 3. Long life cycle 4. Suitable for the currently available probe station Example 1 Memory test bare die size: 7.81 mm X 4.2 mm 'Number of test wafers : 3 2 Number of pads per wafer: 50 Pad size: 80 um X 80 um Pitch: 100 um Pad arrangement: 2 on each side 4 6 Test machine: A dvantest T 5 3 3 5
第27頁 569017 五、發明說明(23) ^ ::所需,面積約35mm x 32fflm 二 接線,·條壓阻^九組探針卡’共需至少1 60 0條探斜 下,依7〇施4例-來設計的記憶體測試實施例如 :32 ;每一晶片的锃叙_ X 5. 59 _ ;—次測試晶片數 85⑽;銲塾距離($數:58 ;銲墊尺寸:85 um x HI f} ; : Advantest T5371 〇 ^LCD ;, 忒用貫施例 銲墊尺+ 〇 n aLLD測 (Pitch) : 4〇 um。 : 3〇 um X 60 um 銲墊距離 能偵測探針受力夫,, 先準備的標準晶片,= = ΐ =針卡使用時,利用預 發明的探針卡,可以旦 日日八有良好的共面度,以本 考受力,根據此受力& _ 1 =片所有各凸塊或銲墊的參 而得知探針是否有&損與=片比較其受力大小, 陷。 相或待測點是否有偏位,缺 若探針卡部分探針的 免因探針與凸塊或銲塾 ^ 可使探針卡下壓,避 失敗。 觸好,而誤以為晶片電路測試 針’使其具ϊ較程製作垂直式彈簧探 電鑛’微裝配及陽極結合,可容使用多層式厚光阻 向價的精密探針卡可因而降低盆價二作,密探針卡,使得 的依賴。探針陣列與印刷電路板之;的=人為褒配技術 芝間的空間轉換器,乃是 第28頁 569017 &、發明說明(24) -^〜 利用球柵陣列(BGA)方式達成,簡易又成本低廉,再者若 將安置探針的基板設計成含有壓力感測器的薄膜,利用 針接觸力回饋由:實能達到監測探針接觸的狀 : 關的改變,只要不脫離本發明之:ί的内$ ’所作其他相 明專利範π内。 精神’均應包含於申請發Page 27 569017 V. Description of the invention (23) ^ :: required, area is about 35mm x 32fflm, two wires, piezoresistance ^ Nine sets of probe cards' need a total of at least 1 60 0 probing, according to 70. Example 4-Designed memory test implementation example: 32; description of each chip _ X 5. 59 _;-number of test chips 85⑽; soldering distance ($ number: 58; pad size: 85 um) x HI f};: Advantest T5371 〇 ^ LCD;, 贯 Using the conventional example pad ruler + 〇n aLLD test (Pitch): 40 um .: 30 um X 60 um pad distance can be detected by the probe Lifu ,, Prepare the standard wafer first, = = ΐ = When using a pin card, using a pre-invented probe card, you can have a good coplanarity every day, and according to the test, according to this force & amp _ 1 = All the bumps or pads of the sheet are used to learn whether the probe has & damage and = the sheet is compared with the force and depression of the sheet. Whether the phase or the point to be measured is deviated, if the probe card is missing Some probes can avoid the failure of the probe card due to the probe and the bump or soldering ^. Touch it well, but mistakenly think that the chip circuit test pin 'makes it longer to make a vertical spring probe. The combination of mining and micro-assembly and anode can accommodate the use of multilayer thick photoresistive precision probe cards, which can reduce the price of the pot, and the dense probe cards make the dependence. The probe array and the printed circuit board; = The artificial space-changing technology of Shiba-Jiang, it is page 569017 & Invention Description (24)-^ ~ It is achieved by the ball grid array (BGA) method, which is simple and low cost. The substrate of the needle is designed as a thin film containing a pressure sensor, and the contact force of the needle is used to feedback the following: the change in the contact of the monitoring probe can be achieved, as long as it does not depart from the present invention: Within the scope of patents, "spirit" should be included in the application
第29頁Page 29
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Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7479237B2 (en) | 2005-12-30 | 2009-01-20 | Industrial Technology Research Institute | Method of fabricating vertical probe head |
US8104356B2 (en) | 2008-06-19 | 2012-01-31 | Unimicron Technology Corp. | Pressure sensing device package and manufacturing method thereof |
CN104049197A (en) * | 2014-06-24 | 2014-09-17 | 上海集成电路研发中心有限公司 | Wafer acceptance test system and method |
TWI655439B (en) * | 2014-06-06 | 2019-04-01 | 美商魯道夫科技股份有限公司 | Method for measuring and evaluating a probe card using a detecting device |
TWI684011B (en) * | 2016-07-28 | 2020-02-01 | 義大利商探針科技公司 | Probe card for electronic devices |
CN112082680A (en) * | 2020-09-16 | 2020-12-15 | 中车大同电力机车有限公司 | Device and method for detecting contact pin retention force of locomotive connector |
CN117517735A (en) * | 2024-01-04 | 2024-02-06 | 苏州迪克微电子有限公司 | Probe card convenient for replacing test probes |
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2002
- 2002-09-13 TW TW91120939A patent/TW569017B/en not_active IP Right Cessation
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7479237B2 (en) | 2005-12-30 | 2009-01-20 | Industrial Technology Research Institute | Method of fabricating vertical probe head |
US8104356B2 (en) | 2008-06-19 | 2012-01-31 | Unimicron Technology Corp. | Pressure sensing device package and manufacturing method thereof |
TWI655439B (en) * | 2014-06-06 | 2019-04-01 | 美商魯道夫科技股份有限公司 | Method for measuring and evaluating a probe card using a detecting device |
CN104049197A (en) * | 2014-06-24 | 2014-09-17 | 上海集成电路研发中心有限公司 | Wafer acceptance test system and method |
CN104049197B (en) * | 2014-06-24 | 2017-12-15 | 上海集成电路研发中心有限公司 | Wafer permits Acceptance Tests system and Acceptable testing process |
TWI684011B (en) * | 2016-07-28 | 2020-02-01 | 義大利商探針科技公司 | Probe card for electronic devices |
CN112082680A (en) * | 2020-09-16 | 2020-12-15 | 中车大同电力机车有限公司 | Device and method for detecting contact pin retention force of locomotive connector |
CN112082680B (en) * | 2020-09-16 | 2022-07-05 | 中车大同电力机车有限公司 | Device and method for detecting contact pin retention force of locomotive connector |
CN117517735A (en) * | 2024-01-04 | 2024-02-06 | 苏州迪克微电子有限公司 | Probe card convenient for replacing test probes |
CN117517735B (en) * | 2024-01-04 | 2024-03-15 | 苏州迪克微电子有限公司 | Probe card convenient for replacing test probes |
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