TWI237307B - Optical projection system, light exposing apparatus and light exposing method - Google Patents

Optical projection system, light exposing apparatus and light exposing method Download PDF

Info

Publication number
TWI237307B
TWI237307B TW093109182A TW93109182A TWI237307B TW I237307 B TWI237307 B TW I237307B TW 093109182 A TW093109182 A TW 093109182A TW 93109182 A TW93109182 A TW 93109182A TW I237307 B TWI237307 B TW I237307B
Authority
TW
Taiwan
Prior art keywords
exposure
optical system
projection
area
projection optical
Prior art date
Application number
TW093109182A
Other languages
English (en)
Chinese (zh)
Other versions
TW200425273A (en
Inventor
Yasuhiro Omura
Kumiko Ishida
Hironori Ikezawa
Original Assignee
Nikon Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nikon Corp filed Critical Nikon Corp
Publication of TW200425273A publication Critical patent/TW200425273A/zh
Application granted granted Critical
Publication of TWI237307B publication Critical patent/TWI237307B/zh

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
    • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70241—Optical aspects of refractive lens systems, i.e. comprising only refractive elements
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
    • G03F7/70466—Multiple exposures, e.g. combination of fine and coarse exposures, double patterning or multiple exposures for printing a single feature

Landscapes

  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Atmospheric Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Lenses (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
TW093109182A 2003-05-01 2004-04-02 Optical projection system, light exposing apparatus and light exposing method TWI237307B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2003126091 2003-05-01
JP2003418614 2003-12-16

Publications (2)

Publication Number Publication Date
TW200425273A TW200425273A (en) 2004-11-16
TWI237307B true TWI237307B (en) 2005-08-01

Family

ID=33422086

Family Applications (1)

Application Number Title Priority Date Filing Date
TW093109182A TWI237307B (en) 2003-05-01 2004-04-02 Optical projection system, light exposing apparatus and light exposing method

Country Status (6)

Country Link
US (1) US7471374B2 (ko)
EP (1) EP1622191A4 (ko)
JP (1) JP4370582B2 (ko)
KR (1) KR101100125B1 (ko)
TW (1) TWI237307B (ko)
WO (1) WO2004097911A1 (ko)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6867844B2 (en) 2003-06-19 2005-03-15 Asml Holding N.V. Immersion photolithography system and method using microchannel nozzles
US6809794B1 (en) 2003-06-27 2004-10-26 Asml Holding N.V. Immersion photolithography system and method using inverted wafer-projection optics interface
DE60308161T2 (de) 2003-06-27 2007-08-09 Asml Netherlands B.V. Lithographischer Apparat und Verfahren zur Herstellung eines Artikels
US8208198B2 (en) 2004-01-14 2012-06-26 Carl Zeiss Smt Gmbh Catadioptric projection objective
US7528929B2 (en) 2003-11-14 2009-05-05 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20080151365A1 (en) 2004-01-14 2008-06-26 Carl Zeiss Smt Ag Catadioptric projection objective
KR20160085375A (ko) 2004-05-17 2016-07-15 칼 짜이스 에스엠티 게엠베하 중간이미지를 갖는 카타디옵트릭 투사 대물렌즈
CN101107570B (zh) * 2004-12-30 2011-02-09 卡尔蔡司Smt股份公司 投影光学系统
WO2006080427A1 (ja) * 2005-01-31 2006-08-03 Nikon Corporation 露光方法、露光装置、及びデバイス製造方法
US7324185B2 (en) 2005-03-04 2008-01-29 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US20060232753A1 (en) 2005-04-19 2006-10-19 Asml Holding N.V. Liquid immersion lithography system with tilted liquid flow
US8248577B2 (en) 2005-05-03 2012-08-21 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7773195B2 (en) 2005-11-29 2010-08-10 Asml Holding N.V. System and method to increase surface tension and contact angle in immersion lithography
DE102007062894A1 (de) 2007-01-23 2008-07-24 Carl Zeiss Smt Ag Projektionsobjektiv für die Lithographie
EP1998223A2 (de) 2007-01-23 2008-12-03 Carl Zeiss SMT AG Projektionsobjektiv für die Lithographie
JP2015532980A (ja) * 2012-09-21 2015-11-16 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ方法及び装置
US10380764B2 (en) * 2013-12-18 2019-08-13 Cognex Corporation System and method for performing vision system planar hand-eye calibration from straight line features
EP3336887A4 (en) * 2015-08-10 2019-04-17 National Institute Of Advanced Industrial Science SEMICONDUCTOR DEVICE INCLUDING CIRCUITS PROVIDING A SECURITY FUNCTION

Family Cites Families (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE2460914C2 (de) 1974-12-21 1983-08-18 Ibm Deutschland Gmbh, 7000 Stuttgart Photolithographische Projektionsvorrichtung
US4346164A (en) * 1980-10-06 1982-08-24 Werner Tabarelli Photolithographic method for the manufacture of integrated circuits
JPH06188169A (ja) 1992-08-24 1994-07-08 Canon Inc 結像方法及び該方法を用いる露光装置及び該方法を用いるデバイス製造方法
US5281996A (en) * 1992-09-04 1994-01-25 General Signal Corporation Photolithographic reduction imaging of extended field
JPH06124873A (ja) 1992-10-09 1994-05-06 Canon Inc 液浸式投影露光装置
US5825043A (en) * 1996-10-07 1998-10-20 Nikon Precision Inc. Focusing and tilting adjustment system for lithography aligner, manufacturing apparatus or inspection apparatus
DE69738910D1 (de) 1996-11-28 2008-09-25 Nikon Corp Ausrichtvorrichtung und belichtungsverfahren
WO1998028665A1 (en) 1996-12-24 1998-07-02 Koninklijke Philips Electronics N.V. Two-dimensionally balanced positioning device with two object holders, and lithographic device provided with such a positioning device
JP3747566B2 (ja) * 1997-04-23 2006-02-22 株式会社ニコン 液浸型露光装置
JP3817836B2 (ja) * 1997-06-10 2006-09-06 株式会社ニコン 露光装置及びその製造方法並びに露光方法及びデバイス製造方法
EP1039511A4 (en) 1997-12-12 2005-03-02 Nikon Corp PROJECTION EXPOSURE PROCESSING METHOD AND PROJECTION APPARATUS
US6208407B1 (en) 1997-12-22 2001-03-27 Asm Lithography B.V. Method and apparatus for repetitively projecting a mask pattern on a substrate, using a time-saving height measurement
AU2747999A (en) * 1998-03-26 1999-10-18 Nikon Corporation Projection exposure method and system
JP2000277415A (ja) * 1999-03-25 2000-10-06 Canon Inc 露光装置
US6867922B1 (en) * 1999-06-14 2005-03-15 Canon Kabushiki Kaisha Projection optical system and projection exposure apparatus using the same
WO2001023933A1 (fr) * 1999-09-29 2001-04-05 Nikon Corporation Systeme optique de projection
JP2001319871A (ja) 2000-02-29 2001-11-16 Nikon Corp 露光方法、濃度フィルタの製造方法、及び露光装置
JP2001318470A (ja) * 2000-02-29 2001-11-16 Nikon Corp 露光装置、マイクロデバイス、フォトマスク、及び露光方法
JP4296701B2 (ja) 2000-10-11 2009-07-15 株式会社ニコン 投影光学系，該投影光学系を備えた露光装置，及び該露光装置を用いたデバイスの製造方法
JP2002151397A (ja) 2000-11-15 2002-05-24 Nikon Corp 投影光学系、露光装置及び露光方法
JP4552337B2 (ja) 2000-12-28 2010-09-29 株式会社ニコン 投影光学系の製造方法及び露光装置の製造方法
US6788389B2 (en) 2001-07-10 2004-09-07 Nikon Corporation Production method of projection optical system
TW571344B (en) 2001-07-10 2004-01-11 Nikon Corp Manufacturing method for projection optic system

Also Published As

Publication number Publication date
JP4370582B2 (ja) 2009-11-25
EP1622191A4 (en) 2008-01-09
TW200425273A (en) 2004-11-16
US20060087633A1 (en) 2006-04-27
WO2004097911A1 (ja) 2004-11-11
KR20060009280A (ko) 2006-01-31
JPWO2004097911A1 (ja) 2006-07-13
KR101100125B1 (ko) 2011-12-29
EP1622191A1 (en) 2006-02-01
US7471374B2 (en) 2008-12-30

Similar Documents

Publication Publication Date Title
TWI237307B (en) Optical projection system, light exposing apparatus and light exposing method
KR101384037B1 (ko) 투영 광학계, 노광 장치 및 노광 방법
CN101216682B (zh) 投影光学系统、曝光装置及曝光方法
KR20020046155A (ko) 투영광학계 및 이 투영광학계를 구비한 노광장치
TW200305786A (en) Projection system, exposure device and espousing method
JP2004205698A (ja) 投影光学系、露光装置および露光方法
JP4706171B2 (ja) 反射屈折投影光学系、露光装置及び露光方法
JP2007206319A (ja) 反射屈折光学系、露光装置及びマイクロデバイスの製造方法
JP2005003982A (ja) 投影光学系、露光装置および露光方法
TW200844677A (en) Image forming optical system, exposure equipment and device manufacturing method
JP2005115127A (ja) 反射屈折投影光学系、露光装置及び露光方法
JP5786919B2 (ja) 投影光学系、露光装置及び露光方法
JP2017076138A (ja) 露光装置、露光方法およびデバイス製造方法
JP2011049571A (ja) 反射屈折投影光学系、露光装置及び露光方法
JP2018010303A (ja) 露光装置およびデバイス製造方法
JP2019082711A (ja) 投影光学系、露光装置、露光方法、及びデバイス製造方法
JP2019091057A (ja) 露光装置及びデバイス製造方法
JP2014194552A (ja) 反射屈折型の投影光学系、露光装置、および露光方法
JP5664697B2 (ja) 反射屈折型の投影光学系、露光装置、および露光方法
JP2016136273A (ja) 投影光学系、露光装置、露光方法、およびデバイス製造方法
JP5877965B2 (ja) 投影光学系、露光装置、露光方法、およびデバイス製造方法
JP2015132843A (ja) 投影光学系、露光装置、露光方法、およびデバイス製造方法
JP2014160274A (ja) 投影光学系、露光装置、露光方法、およびデバイス製造方法
JP2012073632A (ja) 反射屈折投影光学系、露光装置及び露光方法
JP2010026526A (ja) 反射屈折型の投影光学系、露光装置、および露光方法

Legal Events

Date Code Title Description
MC4A Revocation of granted patent