TWI224634B - Method and device for the temperature control of surface temperatures of substrates in a CVD reactor - Google Patents

Method and device for the temperature control of surface temperatures of substrates in a CVD reactor Download PDF

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TWI224634B
TWI224634B TW090127743A TW90127743A TWI224634B TW I224634 B TWI224634 B TW I224634B TW 090127743 A TW090127743 A TW 090127743A TW 90127743 A TW90127743 A TW 90127743A TW I224634 B TWI224634 B TW I224634B
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temperature
substrate holder
substrate
cvd reactor
patent application
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Johannes Kappeler
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Aixtron Ag
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Description

1224634 _案號90127743_年月日 倐正 _ 五、發明說明（1) 本發明係有關一種CVD反應器基板表面溫度控制之方法 及裝置，該基板被置於一被動態氣墊支樓之基板座上，該 基板座則被置於CVD反應器程序室中一基板座載板上。 本發明尚有關一種CVD反應器，其包括複數個在一基板 座載板上被動態氣墊支撐之基板座。 德國專利DE 1 98 55 637 A1曾提出此種CVD反應器及方 法。 習知CVD反應器，例如用於使I I i-v-半導體塗層沈積於 I I I - V基板上’將基板置於圓盤形基板座上。該基板座行 星式放置在基板座載板的凹部中，而被一氣塾旋轉支撐。 此種CVD反應器不僅基板座可相對於基板座載板旋轉，基 板座載板本身亦可繞其轴旋轉。 基板座載板與各基板座同由石墨構成。由於製造因素石 墨具一不均勻性。此外，各氣墊的高度亦彼此有偏差。基 板座載板由下方被一高頻加熱器加熱。不均勻性及不同的 氣塾高度會導致對基板的熱輸送有偏差，而產生不同的基 板表面溫度。一程序室中基板之表面溫度可彼此相差數 度。不同型的基板，例如不同厚度或背面研磨，會使得基 板座對基板的熱傳輸不同而影響基板溫度。藉適當的控制 及參數選擇，例如材料、重量、厚度等可將各基板的溫差 最小化至大約卜2度。 某些對塗層厚度及成份有特殊要求的應用需將溫差抑制 在一度以下，最好是半度以下。亦為有利的是，使用一自 動控制以辨識及補償因有意或無意使用了不同厚度的基板
1224634 修正 曰 9012774¾ _年 月 五、發明說明（2) a j基板而造成的較大基板溫差，而簡化程序抑 發明之目的因此在於降低或補償溫差。 本目的因申請專利範圍中之本發。 ;範圍⑼項，將尤其以光學測量而得的達Λ求依出據平， 並猎改變可個別控制之氣墊構成氣流而調整^ i圍；得測得之表面溫度與平均值的偏差在-預=度 作為-产;ί ”溫度範圍約為一度或半度較佳。將平均值 j為值度理淪值。其優點為，只能向上或向下有最小偏 。在本發明之進一步的設計中，基板座被氣流驅動旋 ，亚可監控其轉速。為此可設一轉速測量器，以測量各 土板座的轉速。轉速的測量可使用一單一的轉速測量器， 各基板座由於基板座載板旋轉而經過該轉速測量器。基板 座的轉速不得低於一最低值，以使晶體均勻成長於整個基 板上。溫度測量可經由程序室蓋板之一穿孔。此處可設一 光學/m度測量器，例如一高溫計，其由上方經該穿孔對準 基板座載板。測量器可是一能測出受溫度左右之塗層特性 的裝置’而據此直接或間接求出溫度。例如可利用反射測 量測出層厚而得知受溫度左右的塗層成長。由於基板座載 板旋轉，各基板座先後經過溫度測量器，故可先後測出各 基板的溫度。基板座載板可有一適當標記，其可被一適當 的感測器感知，以使基板座角度位置與測量器提供的測量 值同步。程序室的加熱初期不調節氣流。氣流被保持在一 預設值。該值可為先前塗佈步驟出現最小溫差的經驗值。 測得基板溫度之平均值達到一穩定理論值，尤其是理論溫
C:\總檔\90\90127743\90127743(替換)-1 .ptc 第 6 頁 1224634 號 901277“ 、發明說明（3) 度時，開始藉改變氣墊高度而調整表面溫度 本發明尚有關一種CVD反應器，其包括複數個在一基板 座載板上被動態氣墊支撐之基板座。 本明使I知之CVD反應器增設一至少包括一溫度測量 器之測量裝置，以求取基板座上所有基板的表面溫度，並 設一溫度調節器且使每一基板座配置一氣體質量流量調節 器，該氣體質量流量調節器可被溫度調節器控制，以藉改 變氣塾问度而使基板溫度保持在一預設溫度範圍中。此處 有利的是使基板座被氣流驅動旋轉。基板座載板亦可被= 動旋轉。且在程序室蓋板穿孔上方設置一單一的溫度測量 器較佳。基板座載板外圓周可設一轉速測量器，其可經基 板座載板的窗口而光學掃描圓周面上設有標記的基板座: 如只設一溫度測量器，例如一古、、西呌 一 旦π咕π紐认、、，s 同，皿计，則南溫計提供的測 „ ^ ^ ,判里值乘法益。依據感測器感知的基 板座載板紅轉角位置可知各測量屬 姑於摻5、、口疮Μ Μ抑 分W里值屬U I板。此基板溫度 被輸达至脈度凋即盗，該溫度調節器由各 平均值，平均值被作為理論、、w 、、〇 ^⑽度求出 各氣體質量流量調節器，妨叮加以袖μ — p态称出仏唬至 ° 故可個別调郎母一構成氧熱6^1 流’以不低於-最小基板座轉速。 稱成轧墊的軋 以下將依據附圖詳細說明本發明-實施例。 發明之詳細說明 CVD反應器具一程序室，該程序室具一底 座載板1構成。程序室蓋& 八 · 由基板 一穿孔14，其大約對粜γ 有距離且具 對丰仃星式排列在基板座載板丨上的基
匸:\總槍\90\90127743\90127743(替換)-l.pt
第7頁 1224634 --塞號90127743_年月曰 倏正___ 五、發明說明（4) 板座2中心。 基板座2為圓盤形，被一氣墊支撐，該氣墊由各別經通 道6輸至每一基板座2容置空間的氣流構成，該氣流通過容 置空間底部的螺旋溝7而驅動基板座2旋轉。 基板座載板1亦被驅動旋轉。基板座載板1在各基板座2 處的外壁皆有一窗口 5，一轉速測量器4可經此窗口掃描到 基板座2外圓周上的標記，以測出基板座2的轉速。 每一基板座2各有一氣流輸入通道，其可被個別的氣體 質量流量調節器MFC1 - MFC5調節。
穿孔14上方設有一溫度測量器3，其可是一高溫計。高 溫計3測得的測量值被輸送至一測量值乘法器1 2。該測量 值乘法器由一未示出的旋轉角感測器得到基板座載板的實 際旋轉角資料，使得溫度測量器3測得的每一溫度^ — T5 可知歸屬何基板座2或其基板9。 基巧表面溫度Tl - T5被輸送至一溫度調節器13成為輸 入麦i。另一輸入變量為溫度理論值T s 〇 1 1。溫度調節器 13由基板表面溫度？1 _ T5求出一平均值，並調節之，使 其$於溫度理論值，其可藉控制高頻加熱器耵而達成。 度凋節器1 3輸送控制值至各氣體質量流量調節器MFC 1
古，氣體質量流量調節器流出之氣流的大小決定氣塾8的 :二二及,頻加熱器經基板座載板與基板座2至基板9的 。旦氣墊8越高，熱輸送越少。因此可藉改變氣體質 里机里而影響基板9表面溫度。故溫度調節器輸出個別的
1224634 案號 901277M 五、發明說明（5) 輸出信號至各氣體質量流量調節器MFC1 _ mfc5。 从如^所示’由to加熱至tl時未進行氣體質量流量調 二。圖中由to加熱至tl溫度升高純以示意方式顯示。實 ，上斜線末端部份為平坦。如此基板表面初溫為以―τ5， ,、達到理論值Tsoll後在一溫度上限別，與一溫度下限孔， ，間。時間t"寺開始調節，使得溫度Ts〇u以下的溫度升 南，溫度Tsoll以上的溫度下降，直到基板溫度？^5在上 溫TU與下溫TL構成的範圍之内。該範圍的大小約等於一度 =度二溫度T1-T5達到範圍TU_TL之内時為時間t2，此J 可開始輸入反應氣體進行塗佈程序。 口 f 一：施例中理論溫度被分開測量，該處維持理論溫度 只藉測量器提供的測量值調整高頻加熱器。 在另實^例中理淪溫度在程序中被改變。尤立是氮化 34 〇34) 愚►板7皿度例如母分鐘^fL· ^ -TT· n r§： 开或下降2度。該處亦可以一分開 11制電路以個別的感測器控制高頻加熱器而得到需要的 溫度斜線。氣體質|令吾士岡y 〇、士 m 士 貝里/瓜里凋即态/、被用於最小化基板溫度 變之理論溫度的偏差。如複數個基板共用一溫 ^里@時’則該溫度測量器非連、續而間歇性測量每一基 J的溫度。溫差由各時間點之理論溫度決定。該溫差應儘 篁小。進行調整可使用一適當的專業系統。 乂 =示特徵本身皆有具發明性質。本發明揭示之特徵 元王已於本案之申請專利範圍中。 元件編號說明
1224634 案號 90127743_年月日_修正 五、發明說明（6) 1 基板座載板 2 基板座 3 溫度測量器 4 轉速測量器 5 窗口 6 通道 7 螺旋溝 8 氣墊 9 基板 10 程序室蓋板 12 測量值乘法器 13 溫度調節器 14 穿孔 HF 高頻加熱器 MFC1-MFC5 氣體質量流量調節器 T1-T5 表面溫度 Tsoi 1 溫度理論值 TU 上溫 TU, 溫度上限 TL 下溫 TL’ 溫度下限
(：:\總檔\90\90127743\90127743(替換）-l.ptc 第10頁 1224634

Claims (1)

1224634 案號 90127743
六、申請專利範圍 9 · 一種C V D反應器，其包括複數個在一基板座載板上被 動態氣墊支撐之基板座，其特徵為，設一至少包括一溫度 測量器（3)之測量裝置，以求取基板座上所有基板（9)Z = 面温度（ΊΊ-Τ5)，並設一溫度調節器（13)且使每一基板座 (2)配置一氣體質量流量調節器（MFn_MFC5)，該氣體質量 流量調節器可被溫度調節器（丨3)控制，以藉改變氣塾高度 而使基板溫度（T卜T5)保持在一預設溫度範圍（Tu，TL) 中0 其中’基板座 10·如申請專利範圍第9項之CVD反應器 (2 )被氣流驅動旋轉。 其中，基板座 11 ·如申請專利範圍第9項之CVD反應器 載板（1)被驅動旋轉。 12·如申請專利範圍第9項之CVD反應器，其中，設置一 單一的溫度測量器（3)在程序室蓋板（1〇)中穿孔（14)的上 方。 1 3 ·如申專利圍第9項之CVD反應器，其中，基板座 «⑴胃m則量器⑷，其可經基板座載板 ⑴的窗口⑸而光學掃描圓周面上設有標記的基板座 (2)。 1 4 .如申凊專利範圍第9項之cvD反應器，纟中，單一的 量值乘法器（12)。
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TW090127743A 2000-11-11 2001-11-08 Method and device for the temperature control of surface temperatures of substrates in a CVD reactor TWI224634B (en)

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