AU2002215034A1 - Method and device for controlling the surface temperatures of substrates in a chemical vapour deposition reactor - Google Patents

Method and device for controlling the surface temperatures of substrates in a chemical vapour deposition reactor

Info

Publication number
AU2002215034A1
AU2002215034A1 AU2002215034A AU1503402A AU2002215034A1 AU 2002215034 A1 AU2002215034 A1 AU 2002215034A1 AU 2002215034 A AU2002215034 A AU 2002215034A AU 1503402 A AU1503402 A AU 1503402A AU 2002215034 A1 AU2002215034 A1 AU 2002215034A1
Authority
AU
Australia
Prior art keywords
substrates
controlling
vapour deposition
chemical vapour
surface temperatures
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU2002215034A
Inventor
Johannes Kappeler
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Aixtron SE
Original Assignee
Aixtron SE
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Aixtron SE filed Critical Aixtron SE
Publication of AU2002215034A1 publication Critical patent/AU2002215034A1/en
Abandoned legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/46—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for heating the substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4584—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally the substrate being rotated
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/10—Heating of the reaction chamber or the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C30B25/165—Controlling or regulating the flow of the reactive gases

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Vapour Deposition (AREA)
AU2002215034A 2000-11-11 2001-10-25 Method and device for controlling the surface temperatures of substrates in a chemical vapour deposition reactor Abandoned AU2002215034A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE10056029A DE10056029A1 (en) 2000-11-11 2000-11-11 Controlling surface temperature of substrates supported by carriers on dynamic gas cushions in process chamber of CVD reactor comprises varying gas stream producing gas cushions from average value of optically measured surface temperatures
DE10056029 2000-11-11
PCT/EP2001/012310 WO2002038840A1 (en) 2000-11-11 2001-10-25 Method and device for controlling the surface temperatures of substrates in a chemical vapour deposition reactor

Publications (1)

Publication Number Publication Date
AU2002215034A1 true AU2002215034A1 (en) 2002-05-21

Family

ID=7663011

Family Applications (1)

Application Number Title Priority Date Filing Date
AU2002215034A Abandoned AU2002215034A1 (en) 2000-11-11 2001-10-25 Method and device for controlling the surface temperatures of substrates in a chemical vapour deposition reactor

Country Status (8)

Country Link
US (2) US6878395B2 (en)
EP (1) EP1335997B1 (en)
JP (1) JP3981634B2 (en)
KR (1) KR100881244B1 (en)
AU (1) AU2002215034A1 (en)
DE (2) DE10056029A1 (en)
TW (1) TWI224634B (en)
WO (1) WO2002038840A1 (en)

Families Citing this family (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10132448A1 (en) * 2001-07-04 2003-01-23 Aixtron Ag CVD device with different temperature controlled substrate holder
US20100037827A1 (en) * 2001-07-04 2010-02-18 Johannes Kaeppeler CVD Device with Substrate Holder with Differential Temperature Control
KR100556503B1 (en) * 2002-11-26 2006-03-03 엘지전자 주식회사 Control Method of Drying Time for Dryer
CN100507073C (en) * 2002-12-10 2009-07-01 Etc外延技术中心有限公司 Receptor system
AU2002368439A1 (en) * 2002-12-10 2004-06-30 Etc Srl Susceptor system
US7205960B2 (en) 2003-02-19 2007-04-17 Mirage Innovations Ltd. Chromatic planar optic display system
DE602004031741D1 (en) * 2004-06-09 2011-04-21 E T C Epitaxial Technology Ct Srl MOUNTING SYSTEM FOR TREATMENT APPLICATIONS
KR101083110B1 (en) * 2004-08-30 2011-11-11 엘지디스플레이 주식회사 Sputtering apparatus with gas injection nozzle assemblly
US7581403B2 (en) * 2005-04-15 2009-09-01 Deeks Daniel H Energy storage arrangement
EP1942364A1 (en) 2005-09-14 2008-07-09 Mirage Innovations Ltd. Diffractive optical relay and method for manufacturing the same
US20080043334A1 (en) * 2006-08-18 2008-02-21 Mirage Innovations Ltd. Diffractive optical relay and method for manufacturing the same
EP1932051A1 (en) * 2005-09-14 2008-06-18 Mirage Innovations Ltd. Diffraction grating with a spatially varying duty-cycle
WO2007052265A2 (en) * 2005-11-03 2007-05-10 Mirage Innovations Ltd. Binocular optical relay device
DE102005055252A1 (en) * 2005-11-19 2007-05-24 Aixtron Ag CVD reactor with slide-mounted susceptor holder
DE102006018514A1 (en) * 2006-04-21 2007-10-25 Aixtron Ag Apparatus and method for controlling the surface temperature of a substrate in a process chamber
US7877895B2 (en) 2006-06-26 2011-02-01 Tokyo Electron Limited Substrate processing apparatus
WO2008023375A1 (en) * 2006-08-23 2008-02-28 Mirage Innovations Ltd. Diffractive optical relay device with improved color uniformity
DE102007026348A1 (en) 2007-06-06 2008-12-11 Aixtron Ag Method and device for temperature control of the surface temperatures of substrates in a CVD reactor
US20100302644A1 (en) * 2007-09-18 2010-12-02 Mirage Innovations Ltd Slanted optical device
US20090149008A1 (en) * 2007-10-05 2009-06-11 Applied Materials, Inc. Method for depositing group iii/v compounds
US8568529B2 (en) 2009-04-10 2013-10-29 Applied Materials, Inc. HVPE chamber hardware
US8183132B2 (en) * 2009-04-10 2012-05-22 Applied Materials, Inc. Methods for fabricating group III nitride structures with a cluster tool
KR20120003493A (en) * 2009-04-24 2012-01-10 어플라이드 머티어리얼스, 인코포레이티드 Substrate pretreatment for subsequent high temperature group iii depositions
US8110889B2 (en) * 2009-04-28 2012-02-07 Applied Materials, Inc. MOCVD single chamber split process for LED manufacturing
CN102414797A (en) * 2009-04-29 2012-04-11 应用材料公司 Method of forming in-situ pre-GaN deposition layer in HVPE
US20110049779A1 (en) * 2009-08-28 2011-03-03 Applied Materials, Inc. Substrate carrier design for improved photoluminescence uniformity
DE102009044276A1 (en) 2009-10-16 2011-05-05 Aixtron Ag CVD reactor with multi-zone gas cushion substrate holder
CN102598217B (en) * 2009-10-28 2015-03-25 丽佳达普株式会社 Metal organic chemical vapor deposition device and temperature control method therefor
WO2011052832A1 (en) * 2009-11-02 2011-05-05 엘아이지에이디피 주식회사 Chemical vapor deposition device and temperature control method of chemical vapor deposition device
WO2011052831A1 (en) * 2009-11-02 2011-05-05 엘아이디에이디피 주식회사 Temperature control method of chemical vapor deposition device
KR101062460B1 (en) * 2009-12-16 2011-09-05 엘아이지에이디피 주식회사 Temperature Control Method of Chemical Vapor Deposition Equipment
JP5882918B2 (en) 2010-02-24 2016-03-09 ビーコ・インストゥルメンツ・インコーポレイテッド Processing method and processing apparatus using temperature distribution control device
US20110256692A1 (en) 2010-04-14 2011-10-20 Applied Materials, Inc. Multiple precursor concentric delivery showerhead
TWI534291B (en) 2011-03-18 2016-05-21 應用材料股份有限公司 Showerhead assembly
KR101395243B1 (en) * 2011-04-29 2014-05-15 세메스 주식회사 Apparatus and method for treating substrate
AU2012271616B2 (en) 2011-06-16 2015-05-07 Zimmer, Inc. Micro-alloyed porous metal having optimized chemical composition and method of manufacturing the same
US8956683B2 (en) 2011-06-16 2015-02-17 Zimmer, Inc. Chemical vapor infiltration apparatus and process
DE102011053498A1 (en) 2011-09-12 2013-03-14 Aixtron Se Method and device for determining the deformation of a substrate
DE102011055061A1 (en) * 2011-11-04 2013-05-08 Aixtron Se CVD reactor or substrate holder for a CVD reactor
US20130171350A1 (en) * 2011-12-29 2013-07-04 Intermolecular Inc. High Throughput Processing Using Metal Organic Chemical Vapor Deposition
DE102012101923B4 (en) * 2012-03-07 2019-11-07 Osram Opto Semiconductors Gmbh Substrate carrier assembly, coating system with substrate carrier assembly and method for performing a coating method
US9273413B2 (en) 2013-03-14 2016-03-01 Veeco Instruments Inc. Wafer carrier with temperature distribution control
TWI734770B (en) * 2016-04-24 2021-08-01 美商應用材料股份有限公司 Apparatus for prevention of backside deposition in a spatial ald process chamber
US10829866B2 (en) 2017-04-03 2020-11-10 Infineon Technologies Americas Corp. Wafer carrier and method
KR102369676B1 (en) 2017-04-10 2022-03-04 삼성디스플레이 주식회사 Apparatus and method for manufacturing a display apparatus
DE102018121854A1 (en) * 2018-09-07 2020-03-12 Aixtron Se Process for setting up or operating a CVD reactor
DE102018130138A1 (en) 2018-11-28 2020-05-28 Aixtron Se Susceptor in a CVD reactor
DE102018132673A1 (en) 2018-12-18 2020-06-18 Aixtron Se Susceptor for a CVD reactor
US11542604B2 (en) * 2019-11-06 2023-01-03 PlayNitride Display Co., Ltd. Heating apparatus and chemical vapor deposition system
TWI711717B (en) * 2019-11-06 2020-12-01 錼創顯示科技股份有限公司 Heating apparatus and chemical vapor deposition system
DE102020100481A1 (en) * 2020-01-10 2021-07-15 Aixtron Se CVD reactor and method for controlling the surface temperature of the substrates
DE102020100565A1 (en) 2020-01-13 2021-07-15 Aixtron Se Process for depositing layers
DE102020101066A1 (en) 2020-01-17 2021-07-22 Aixtron Se CVD reactor with double flow zone plate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2596070A1 (en) * 1986-03-21 1987-09-25 Labo Electronique Physique DEVICE COMPRISING A PLANAR SUSCEPTOR ROTATING PARALLEL TO A REFERENCE PLANE AROUND A PERPENDICULAR AXIS AT THIS PLAN
ES2054357T3 (en) * 1989-05-08 1994-08-01 Philips Nv DEVICE AND METHOD FOR TREATING FLAT SUBSTRATES UNDER REDUCED PRESSURE.
US5549756A (en) * 1994-02-02 1996-08-27 Applied Materials, Inc. Optical pyrometer for a thin film deposition system
US5788777A (en) 1997-03-06 1998-08-04 Burk, Jr.; Albert A. Susceptor for an epitaxial growth factor
US6123766A (en) * 1997-05-16 2000-09-26 Applied Materials, Inc. Method and apparatus for achieving temperature uniformity of a substrate
US6005226A (en) * 1997-11-24 1999-12-21 Steag-Rtp Systems Rapid thermal processing (RTP) system with gas driven rotating substrate
DE19855637A1 (en) * 1998-12-02 2000-06-15 Aixtron Ag Process and system for semiconductor crystal production with temperature management

Also Published As

Publication number Publication date
KR20040044386A (en) 2004-05-28
DE50106652D1 (en) 2005-08-04
US6983620B2 (en) 2006-01-10
DE10056029A1 (en) 2002-05-16
EP1335997A1 (en) 2003-08-20
JP2005505123A (en) 2005-02-17
KR100881244B1 (en) 2009-02-05
US20050132954A1 (en) 2005-06-23
JP3981634B2 (en) 2007-09-26
US20030233768A1 (en) 2003-12-25
US6878395B2 (en) 2005-04-12
WO2002038840A1 (en) 2002-05-16
TWI224634B (en) 2004-12-01
EP1335997B1 (en) 2005-06-29

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