TW593722B - Sputtering target for forming phase change type optical disk protective film and optical recording medium with phase change type optical disk protective film formed thereon by using target - Google Patents

Sputtering target for forming phase change type optical disk protective film and optical recording medium with phase change type optical disk protective film formed thereon by using target Download PDF

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Publication number
TW593722B
TW593722B TW091109986A TW91109986A TW593722B TW 593722 B TW593722 B TW 593722B TW 091109986 A TW091109986 A TW 091109986A TW 91109986 A TW91109986 A TW 91109986A TW 593722 B TW593722 B TW 593722B
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Taiwan
Prior art keywords
protective film
phase change
sputtering target
optical disc
silicon oxide
Prior art date
Application number
TW091109986A
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English (en)
Inventor
Masataka Yahagi
Hideo Takami
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Nikko Materials Co Ltd
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Publication of TW593722B publication Critical patent/TW593722B/zh

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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/547—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on sulfides or selenides or tellurides
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    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/64—Burning or sintering processes
    • C04B35/645—Pressure sintering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
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593722 A7 __ —_ B7 ___ 五、發明說明（ί ) 【技術領域】 本發明係關於利用濺鍍形成膜之際可減少濺擊時發生 之粒子（微塵）與結球，具高密度及品質差異小並能提升量 產性，特別於形成相變化型光碟保護膜爲有用之由硫屬化 物及矽氧化物複合物所構成之濺鑛靶，及使用該靶形成相 變化型光碟保護膜之光記錄媒體。 【背景技術】 近年來開發之不需磁頭即能夠記錄、再生之高密度記 錄光碟技術迅速地受到關注。此種光碟可分爲再生專用型 、追記型、覆寫型等3種，而在追記型及覆寫型所使用之 相變化方式特別受矚目。以下簡單說明使用此相變化型光 碟之記錄、再生原理。 相變化型光碟爲以雷射光照射基板上之記錄薄膜來加 熱升溫，使得記錄薄膜在構造上出現結晶學之相變化(非晶 形〇結晶）以進行資訊之記錄、再生，更具體而言，乃檢測 因其不同相間光學常數之改變所引起之反射率之改變以進. 行資訊之再生。 上述相變化係以照射直徑收縮至1〜數μπι程度之雷 射光來進行。此時例如l//m之雷射光束以10m/s之直線 速度通過時，雷射光照射於光碟上某一點之時間爲l〇〇ns ，必須在此時間內檢測上述相變化及反射率。 又於實現上述結晶學上相變化、即非晶形與結晶之相 變化時，熔融與急冷不僅於光碟之相變化記錄層同時亦反 覆施加於周圍之電介質保護層及鋁合金反射膜。 4 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------------訂---------^^^1 (請先閱讀背面之注意事項再填寫本頁) 593722 A7 _B7 —_ 五、發明說明（>) ^ 此種相變化型光碟爲Ge-Sb-Te系等之記錄薄膜層兩 側夾以ZnS · Si〇2系等高熔點電介質保護層並再設置鋁合 金反射膜之四層構造。 其中反射層與保護層除了需具備增大非晶形部與結晶 部之吸收使反射率之差距變大之光學功能外，尙需有提昇 記錄薄膜之耐濕性及防止因熱變形之功能，甚至需要有能 控制記錄時熱條件之功能(參照雜誌『光學』26卷1號頁9 〜15) 〇 因此高熔點電介質保護層對因升溫與冷卻所引起之熱 之反覆應力需具有耐（熱）性，並使此等熱影響不致影響到 反射膜或其他部位，同時保護層本身需爲薄層、低反射率 、及不變質之強韌性。此意味著電介質保護層具有重要任 務。 上述電介質保護層通常用濺鍍法形成。此濺鑛法所使 用原理爲使正電極與負電極所構成之靶相對向，在惰性氣 體環境氣氛下施加高電壓於該等之基板及靶之間使產生電. 場，此時電離之電子與惰性氣體衝撞而產生等離子體，該 等離子體中之正離子會衝擊負電極靶表面而擊出靶之構成 原子，此被擊出之原子即附著於對面基板表面而形成薄膜 〇 上述電介質保護層因需要可見光範圍內之穿透性及耐 熱性等，故一向使用由ZnS - Si02等硫屬化物及矽氧化物 之複合物(以下如未特別記述物質名稱時均以ZnS - Si02代 表說明之)所構成之靶進行濺鍍，形成約500〜1000A之薄 5 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁} 訂---------Φ 593722 A7 _____B7 _ 五、發明說明（3 ) 膜。 此等材料使用高頻濺鍍(RF)裝置、磁控濺鍍裝置、或 對靶材施以特殊處理後用直流(DC)濺鍍裝置等以形成薄膜 〇 由硫屬化物及矽氧化物之複合物所構成之濺鑛靶之結 晶粒子如使其微細化及高密度化時，可使靶之濺擊面均勻 且平滑，可減少粒子與結球之發生並延長濺鍍靶壽命，此 爲其特徵所在。其結果可提升光碟之生產性。 但以往製作以硫屬化物爲母相而與矽氧化物所成之複 合物來構成濺鍍靶時，在硫屬化物燒結溫度範圍內較難發 生硫屬化物與矽氧化物之反應，且矽氧化物本身之變形等 亦不發生。一般而言矽氧化物之絕緣性較硫屬化物爲高， 如考慮濺鍍之放電安定性，則以讓微細矽氧化物均勻分佈 於硫屬化物母相之濺鍍靶較好。 此種硫屬化物與矽氧化物之濺鎪靶容易在硫屬化物與 矽氧化物間產生空隙，而矽氧化物愈微細化則產生空隙愈. 顯著，同時硫屬化物之緻密化亦被抑制，因此有靶密度降 低等問題發生。 尤其一般認爲硫屬化物與矽氧化物間之空隙爲發生粒 子之原因，而結球則以濺擊率低之矽氧化物爲起點發生。 因此硫屬化物與矽氧化物間之空隙愈小愈好，同時於濺倉虫 方向連續存在之矽氧化物亦最好儘量減少。 【發明之揭示】 本發明之目的爲能以安定、低成本來製作出結晶粒微 6 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)
593722 A7 五、發明說明) 細之97%以上高密度之濺鍍靶，進而獲得能夠提高成膜之 均勻性及提升生產效率之特別於形成相變化型光碟保護膜 上爲有用之由硫屬化物與矽氧化物之複合物所構成之靶及 使用該靶形成相變化型光碟保護膜之光記錄媒體。 爲解決上述課題經本發明者等精心硏究結果，獲知調 整矽氧化物形狀且使其微細化時，能夠使濺鍍靶濺擊面均 勻且平滑並容易高密度化，不影響保護膜特性，同時可減 少濺擊時發生之粒子及結球，亦能提升薄膜厚度均勻性。 本發明依據上述見地，乃提供： 1 · 一種相變化型光碟保護膜形成用濺鍍靶，係由硫 屬化物與矽氧化物之複合物所構成；其特徵爲，至少在濺 蝕部位，將相對於濺擊面之法線方向位於一 30°〜+ 30° 範圍之面所存在之矽氧化物之法線方向結晶粒徑平均長度 定爲A、相對於該法線在垂直方向之結晶粒徑平均長度定 爲B時，具有0.3$ A/BS0.95之結構。 2 · —種相變化型光碟保護膜形成用濺鑛靶，其特徵爲 ，相對於濺擊面之法線方向位於-30。〜+ 30。範圍內之 面所存在之矽氧化物之法線方向結晶粒徑平均長度A爲 0.1 〜10 // m 〇 3 ·如上述1之相變化型光碟保護膜形成用濺鍍靶， 其中，相對於濺擊面之法線方向位於-30。〜+ 30。範圍 之面所存在之矽氧化物’其法線方向結晶粒徑平均長度爲 0.1 〜10 // m 之。 4·如上述1〜3之相變化型光碟保護膜形成用濺鎪靶 7 n ϋ n n n n ϋ n n n n · n n n n ϋ n V · n n n n n n I 1 < =0 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS〉A4規格（210 X 297公爱） 593722 A7 _ B7_ 一 五、發明說明（f ) ，其中，硫屬化物含有硫化鋅。 5 ·如上述1〜4之相變化型光碟保護膜形成用濺鍍革巴 ，其中，矽氧化物之含量爲1〜50mol%。 6·如上述1〜5之相變化型光碟保護膜形成用濺鍍靶 ，其中，矽氧化物爲純度98%以上二氧化矽。 7 ·如上述1〜6之相變化型光碟保護膜形成用濺鍍靶 ，其中，矽氧化物之結晶化溫度在900〜1400°C範圍。 8 ·如上述1〜7之相變化型光碟保護膜形成用濺鍍靶 ，其中，相對密度爲97%以上。 9· 一種光記錄媒體，其特徵在於，係使用上述1〜8 之濺鍍靶來形成相變化型光碟保護膜而構成。 【圖式之簡單說明】 圖1爲結球發生率與Si〇2部之長度比A/B之相關曲線 圖。 圖2爲表面粗度Ra(//m)與Si02部之長度比A/B之相 關曲線圖。 【發明之實施形態】 本發明之由硫屬化物與矽氧化物之複合物所構成之相 變化型光碟保護膜形成用濺鍍靶，其最大特色爲至少在其 濺蝕部位，將相對於濺擊面之法線方向位於-30°〜+ 30 °範圍內之面所存在之矽氧化物之法線方向結晶粒徑平均 長度定爲A、相對於該法線在垂直方向之結晶粒徑平均長 度定爲B時，具有0.3$ A/BS0.95之結構。 在此所謂相對於法線方向位於-30°〜+ 30°範圍之 8 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -------------------訂--------- (請先閲讀背面之注意事項再填寫本頁) 593722 A7 ^__B7_ '〜—— ___ 五、發明說明（L ) 面所存在之砂氧化物之長度乃指位於法線方向與由法線方 向偏離一 30。〜+ 30°範圍之面。 換言之，以上述條件可減少於濺鍍靶厚度方向上所存 在之Si〇2粒子’亦即使Si〇2粒子變薄、變扁平可有效地 抑制粒子及結球之發生。 又相對於法線方向位於-30°〜+ 30°範圍之面所存 在之矽氧化物之法線方向結晶粒徑平均長度爲〇1〜1〇/zm 時則更有效。 再者’本發明之相變化型光碟保護膜形成用濺鍍革巴， 其硫屬化物至少含有硫化鋅且矽氧化物之組成爲1〜 50mol% 較好。 上述矽氧化物典型上係使用純度98%以上之二氧化砂 ，又矽氧化物之結晶化溫度在900〜1400°C範圍內較好。 本發明之相變化型光碟保護膜形成用濺鍍靶能夠達成 97%以上相對密度。本發明包含使用上述濺鍍靶形成相變 化型光碟保護膜之光記錄媒體。 製造濺鍍靶時，如下述實施例所明示般，係將硫屬化 物粉末與矽氧化物粉末均勻地分散混合後用熱壓等方式來 製造。由此硫屬化物粉末與矽氧化物間之空隙變少而可獲 得相對密度97%以上之相變化型光碟保護膜形成用濺鍍靶 〇 由鹼土類金屬及其氧化物或鹼金屬及其氧化物選取1 種以上添加0.001〜5wt%時可使本發明之濺鍍靶容易製造 且有效。鹼土類金屬含Li、Na、K、Rb、Cs、Fr，鹼金屬 9 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） (請先閱讀背面之注意事項再填寫本頁) -9 --訂--------- ^^^1 · 乃37¾ A7 __B7__ 1、發明說明（j ) 則含Be、Mg、Ca、Sr、Ba、Ra等。亦可再含0.001〜 Wwt%之硼、鋁、磷、砷或其氧化物。 由於本發明之濺鍍靶能使結晶粒微細化且高密度化， 可使濺鑛靶濺擊面均勻且平滑，因此具有減少濺擊時粒子 及結球之發生及延長灑鑛紀罱命等顯著效果。 其結果可提升形成有本發明之相變化型光碟保護膜之 光I己錄媒體之生產性’可獲得品質優良之材料。 【實施例及比較例】 以下根據實施例及比較例說明本發明。但本實施例僅 爲一例，本發明不受此等實施例所限。亦即，本發明僅受 申請專利範圍之限制，且本發明亦包含實施例以外之各種 變形。 (實施例1) 使用純度4Ν(99·99%)以上ZnS粉末與含Na20 O.lwt% 之Si02粉末，對ZnS以20mol%之比例來混合Si02。 此混合粉末裝塡於石墨模具，在Ar環境氣氛下，以 表面壓150kg/cm2、溫度1000°C條件下進行熱壓。 如此製得之靶之相對密度爲99%。又於濺擊面之Si02 部分，其法線方向結晶粒徑平均長‘度與相對於該法線在垂 直方向之結晶粒徑平均長度之比(A/B)爲0.7，Si02部之法 線方向結晶粒徑平均長度爲8//m。 (實施例2) 使用純度4Ν(99·99%)以上ZnS粉末與含CaO 0.2wt% 之Si02粉末，對ZnS以20mol%比例混合Si02。 10 --------------------訂--------- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 593722 A7 _____^____ 五、發明說明（t ) 此混合粉末裝塡於石墨模具，在Ar環境氣氛下，以 表面壓150kg/cm2、溫度1000°C條件下進行熱壓。 如此製得之濺鍍靶之相對密度爲98%。又於濺擊面之 Si02部分，其法線方向結晶粒徑平均長度與相對於該法線 在垂直方向之結晶粒徑平均長度之比(A/B)爲0.9，Si02部 之法線方向結晶粒徑平均長度爲l〇//m。 (實施例3) 使用純度4Ν(99·99%)以上ZnS粉末與含K20 0.2wt% 之Si02粉末，對ZnS以20m〇l%比例混合Si02。 此混合粉末裝塡於石墨模具，在Ar環境氣氛下，以 表面壓150kg/cm2、溫度110(TC條件下進行熱壓。 如此製得之濺鍍靶之相對密度爲99.5%。又於濺擊面 之Si02部分，其法線方向結晶粒徑平均長度與相對於該法 線在垂直方向之結晶粒徑平均長度之比(A/B)爲0.6, Si02 部之法線方向結晶粒徑平均長度爲6/zm。 (比較例1) 使用純度4Ν(99·99%)以上ZnS粉末與Si02粉末，對 ZnS以20mol%比例混合Si02。 此混合粉末裝塡於石墨模具，在Ar*環境氣氛下，以 表面壓150kg/cm2、溫度1000°C條件下進行熱壓。 如此製得濺鍍靶之相對密度爲94%。又於濺擊面之 Si〇2部分，其法線方向結晶粒徑平均長度與相對於該法線 在垂直方向之結晶粒徑平均長度之比(A/B)爲1.1 ’ Si02部 之法線方向結晶粒徑平均長度爲15#m。 11 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------訂--- (請先閱讀背面之注意事項再填寫本頁) Φ, 593722 A7 __B7 __ 五、發明說明（1 ) (比較例2) 使用純度4Ν(99·99%)以上ZnS粉末與Si02粉末，對 ZnS以20mol%比例混合Si02。 此混合粉末裝塡於石墨模具，在Ar環境氣氛下，以 表面壓300kg/cm2、溫度1100°C條件下進行熱壓。 如此製得濺鍍靶之相對密度爲98%。又於濺擊面之 Si02部分，其法線方向結晶粒徑平均長度與相對於該法線 在垂直方向之結晶粒徑平均長度之比(A/B)爲1·0，Si02部 之法線方向結晶粒徑平均長度爲13//m。 (比較例3) 使用純度4Ν(99·99%)以上ZnS粉末與Si02粉末，對 ZnS以20mol%比例混合Si02。 此混合粉末裝塡於石墨模具，在Ar環境氣氛下，以 表面壓300kg/cm2、溫度1100°C條件下進行熱壓。 如此製得濺鍍靶之相對密度爲98%。又於濺擊面之 Si〇2部分，其法線方向結晶粒徑平均長度與相對於該法線 在垂直方向之結晶粒徑平均長度之比(A/B)爲1.1，Si02部 之法線方向結晶粒徑平均長度爲20/zm。 使用上述實施例1〜3及比較例1〜2製得之濺鍍靶進 行濺擊試驗。濺擊條件爲輸入功率5W/cm2、Ar氣壓0.5Pa 。測定此試驗所造成之結球發生個數與濺擊面粗度。結果 列示於表1。 由表1所示結果可知實施例之結球發生個數顯著較比 較例減少，且濺擊面粗度亦小。藉此，可獲得一種由硫屬 12 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) ---- 訂· — 593722 A7 B7 五、發明說明（/ϋ) 化物與矽氧化物之複合物所構成之濺鑛靶，其可減少濺擊 時發生之粒子（微塵）及結球，且可在高密度、品質差異小 的前提下提升量產性，尤其在形成相變化型光碟保護膜上 爲有用的。 又Si02部之上述長度之比Α/Β與結球之發生及濺擊表 面粗度有相關關係，如圖1、圖2所示。 圖1爲結球發生率與Si02部之長度比A/B之相關曲線 圖。圖2爲表面粗度Ra(//m)與Si02部之長度比A/B之相 關曲線圖。 因此調整Si02部之上述長度之比A/B即可控制結球之 發生及靶表面粗度。 表1 密度(％) Si02結晶粒徑 平均長度比 (A/B) Si〇2法線方向 結晶粒徑平均 長度(//m) 結球發生率 (個數/cm2) 濺擊面表面粗度 (Ra) 實施例1 99 0.7 8 0.11 1.5 實施例2 98 0.9 10 0.20 2.3 實施例3 99.5 0.6 6 0.09 1.2 比較例1 94 1.1 15 0.33 3.5 比較例2 98 1.0 13 0.29 2.8 比較例3 94 1.1 20 0.37 4.7 A :相對於濺擊面法線方向位於-30°〜+30°範圍之面所 存在之矽氧化物之法線方向結晶粒徑平均長度 B :相對於該法線在垂直方向之結晶粒徑平均長度 【發明效果】 本發明藉由使用由硫屬化物與矽氧化物複合物所構成 之相變化型光碟保護膜形成用濺鍍靶(將相對於濺擊面之法 13 I----------%裝--------^---------Φ (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 593722 A7 _________B7________ 五、發明說明（// ) 線方向位於一 30°〜+ 30°範圍內之面所存在之矽氧化物 之法線方向結晶粒徑平均長度定爲A、相對於該法線在垂 直方向之結晶粒徑平均長度定爲B時，具有〇.3$A/BS 0.95之結構），並以濺鍍形成薄膜時，可減少濺擊時發生之 粒子（微塵）及結球，可在高密度、品質差異小的前提下提 升量產性，此爲其顯著效果所在。 藉此，可得到即使濺鍍靶中Si02等微細化亦能容易高 密度化、不損害保護膜特性、可提升成膜均勻性、並提升 生產效率之光碟保護膜形成用濺鍍靶及使用該濺鍍靶形成 相變化型光碟保護膜之光記錄媒體，此爲其所具優異效果 本紙张尺度適用中國國豕標準（CNS)A4規格（21〇 X 297公爱） --------------------tr---------峰 (請先閱讀背面之注意事項再填寫本頁)

Claims (1)

  1. 59
    1 · 一種相變化型光碟保護膜形成用濺鍍靶，係由硫 屬化物與矽氧化物之複合物所構成；其特徵爲，至少在灘 蝕部位，將相對於濺擊面之法線方向位於-30°〜+ 30° 範圍之面所存在之矽氧化物之法線方向結晶粒徑平均長度 定爲A、相對於該法線在垂直方向之結晶粒徑平均長度定 爲B時，具有〇·3^Α/Β^Ο·95之結構，且結晶粒徑平均長 度 Α 爲 0.1 〜l〇//m。 2 · —種相變化型光碟保護膜形成用濺鍍靶，係由硫 屬化物與矽氧化物之複合物所構成；其特徵爲，相對於濺 擊面之法線方向位於-30°〜+ 30°範圍內之面所存在之 矽氧化物之法線方向結晶粒徑平均長度A爲0.1〜10//m。 3·如申請專利範圍第1或2項之相變化型光碟保護 膜形成用濺鍍靶，其中，該硫屬化物包含硫化鋅。 4·如申請專利範圍第1或2項之相變化型光碟保護 膜形成用濺鍍靶，其中，該矽氧化物之含量爲1〜50mol% 〇 5·如申請專利範圍第1或2項之相變化型光碟保護 膜形成用濺鍍靶，其中，該矽氧化物爲純度98%以上之二 氧化石夕。 6·如申請專利範圍第1或2項之相變化型光碟保護 膜形成用濺鍍靶，其中，該矽氧化物之結晶化溫度爲900 〜14001範圍。 7·如申請專利範圍第1或2項之相變化型光碟保 護膜形成用濺鍍靶，其相對密度爲97%以上。 1 本紙張尺度適用中國國家標準(CNS)A4規格(210 x 297公變) (請先閲讀背面之注意事項寫本頁) 訂 593722 A8 B8 C8 D8 六、申請專利範圍 8 · 一種光記錄媒體，其特徵在於：係使用申請專利 範圍第1項或第2項之濺鍍靶來形成相變化型光碟保護膜 而構成。 (請先閲讀背面之注意事項寫本頁) m 、1T.— 本紙張尺度適用中國國家標準（CNS)A4規格(210 X 297公釐〉
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