TW583294B - Polishing compositions having organic polymer particles - Google Patents

Polishing compositions having organic polymer particles Download PDF

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Publication number
TW583294B
TW583294B TW091106648A TW91106648A TW583294B TW 583294 B TW583294 B TW 583294B TW 091106648 A TW091106648 A TW 091106648A TW 91106648 A TW91106648 A TW 91106648A TW 583294 B TW583294 B TW 583294B
Authority
TW
Taiwan
Prior art keywords
usa
polishing
particles
polymer particles
organic polymer
Prior art date
Application number
TW091106648A
Other languages
English (en)
Chinese (zh)
Inventor
Wesley D Costas
Craig D Lack
Daniel A Saucy
Original Assignee
Rodel Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/826,525 external-priority patent/US6568997B2/en
Application filed by Rodel Inc filed Critical Rodel Inc
Application granted granted Critical
Publication of TW583294B publication Critical patent/TW583294B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
TW091106648A 2001-04-05 2002-04-02 Polishing compositions having organic polymer particles TW583294B (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/826,525 US6568997B2 (en) 2001-04-05 2001-04-05 CMP polishing composition for semiconductor devices containing organic polymer particles
US10/055,535 US20020173243A1 (en) 2001-04-05 2002-01-23 Polishing composition having organic polymer particles

Publications (1)

Publication Number Publication Date
TW583294B true TW583294B (en) 2004-04-11

Family

ID=26734335

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091106648A TW583294B (en) 2001-04-05 2002-04-02 Polishing compositions having organic polymer particles

Country Status (5)

Country Link
US (1) US20020173243A1 (https=)
JP (1) JP2004532521A (https=)
KR (1) KR100864617B1 (https=)
TW (1) TW583294B (https=)
WO (1) WO2002081584A1 (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
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CN105308129A (zh) * 2013-04-25 2016-02-03 日本嘉柏微电子株式会社 浆料组合物以及基材抛光方法

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US6863774B2 (en) * 2001-03-08 2005-03-08 Raytech Innovative Solutions, Inc. Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
JP3895949B2 (ja) * 2001-07-18 2007-03-22 株式会社東芝 Ｃｍｐ用スラリー、およびこれを用いた半導体装置の製造方法
JP3692109B2 (ja) * 2002-10-24 2005-09-07 株式会社東芝 半導体装置の製造方法
US6918820B2 (en) * 2003-04-11 2005-07-19 Eastman Kodak Company Polishing compositions comprising polymeric cores having inorganic surface particles and method of use
KR100539983B1 (ko) * 2003-05-15 2006-01-10 학교법인 한양학원 Ｃｍｐ용 세리아 연마제 및 그 제조 방법
JP3892846B2 (ja) * 2003-11-27 2007-03-14 株式会社東芝 Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
CN1654617A (zh) * 2004-02-10 2005-08-17 捷时雅株式会社 清洗用组合物和半导体基板的清洗方法及半导体装置的制造方法
CN1667026B (zh) 2004-03-12 2011-11-30 K.C.科技股份有限公司 抛光浆料及其制备方法和基板的抛光方法
US20060165615A1 (en) * 2004-11-23 2006-07-27 Shende Rajesh V Non-oxidative tooth whiteners for dentifrice application
US20060118760A1 (en) * 2004-12-03 2006-06-08 Yang Andy C Slurry composition and methods for chemical mechanical polishing
KR100959439B1 (ko) 2005-04-14 2010-05-25 미쓰이 가가쿠 가부시키가이샤 연마재 슬러리 및 이것을 사용한 연마재
KR100641348B1 (ko) 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
US8551202B2 (en) * 2006-03-23 2013-10-08 Cabot Microelectronics Corporation Iodate-containing chemical-mechanical polishing compositions and methods
JP4996874B2 (ja) * 2006-04-17 2012-08-08 株式会社Ａｄｅｋａ 金属ｃｍｐ用研磨組成物
JP4912791B2 (ja) * 2006-08-21 2012-04-11 Ｊｓｒ株式会社 洗浄用組成物、洗浄方法及び半導体装置の製造方法
WO2008109270A1 (en) * 2007-03-06 2008-09-12 Arkema France Abrasive formulation containing organic polymer particles
CN102677538B (zh) * 2007-06-18 2014-12-31 欧美诺华解决方案公司 纸涂布组合物、涂布纸和方法
KR100949250B1 (ko) * 2007-10-10 2010-03-25 제일모직주식회사 금속 ｃｍｐ 슬러리 조성물 및 이를 이용한 연마 방법
WO2010039574A1 (en) 2008-09-30 2010-04-08 The Procter & Gamble Company Liquid hard surface cleaning composition
WO2010039572A1 (en) 2008-09-30 2010-04-08 The Procter & Gamble Company Liquid hard surface cleaning composition
WO2010039571A1 (en) 2008-09-30 2010-04-08 The Procter & Gamble Company Liquid hard surface cleaning composition
JP5658276B2 (ja) 2009-12-22 2015-01-21 ザ プロクター アンド ギャンブルカンパニー 液体クリーニング及び／又はクレンジング組成物
JP5559893B2 (ja) 2009-12-22 2014-07-23 ザ プロクター アンド ギャンブル カンパニー 液体クリーニング及び／又はクレンジング組成物
EP2561056A1 (en) 2010-04-21 2013-02-27 The Procter & Gamble Company Liquid cleaning and/or cleansing composition
EP2431453B1 (en) 2010-09-21 2019-06-19 The Procter & Gamble Company Liquid cleaning and/or cleansing composition
EP2431451A1 (en) 2010-09-21 2012-03-21 The Procter & Gamble Company Liquid detergent composition with abrasive particles
WO2012040143A1 (en) 2010-09-21 2012-03-29 The Procter & Gamble Company Liquid cleaning composition
RU2566750C2 (ru) 2011-06-20 2015-10-27 Дзе Проктер Энд Гэмбл Компани Жидкий состав для чистки и/или глубокой очистки
US8852643B2 (en) 2011-06-20 2014-10-07 The Procter & Gamble Company Liquid cleaning and/or cleansing composition
CN103717726A (zh) 2011-06-20 2014-04-09 宝洁公司 液体清洁和/或净化组合物
EP2537917A1 (en) 2011-06-20 2012-12-26 The Procter & Gamble Company Liquid detergent composition with abrasive particles
EP2719752B1 (en) 2012-10-15 2016-03-16 The Procter and Gamble Company Liquid detergent composition with abrasive particles
WO2014208762A1 (ja) * 2013-06-29 2014-12-31 Hoya株式会社 ガラス基板の製造方法及び磁気ディスクの製造方法、並びにガラス基板用研磨液組成物
CN103725256A (zh) * 2013-12-31 2014-04-16 上海集成电路研发中心有限公司 用于cmp的研磨颗粒体系及抛光液
US20160120786A1 (en) * 2014-11-03 2016-05-05 L'oreal Use of specific acrylates copolymer as spf booster
US9957468B2 (en) 2015-11-06 2018-05-01 The Procter & Gamble Company Shaped particles
KR101943704B1 (ko) * 2016-06-27 2019-01-29 삼성에스디아이 주식회사 금속막용 cmp 슬러리 조성물 및 연마 방법
KR102937492B1 (ko) * 2019-10-24 2026-03-10 버슘머트리얼즈 유에스, 엘엘씨 높은 산화물 제거율을 지닌 얕은 트렌치 절연 화학 기계적 평탄화 조성물
IL293769A (en) * 2019-12-12 2022-08-01 Versum Mat Us Llc Chemical Mechanical Flattening in Shallow Channel Isolation with Low Level Oxide
US11254839B2 (en) 2019-12-12 2022-02-22 Versum Materials Us, Llc Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing

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JP2001523395A (ja) * 1997-04-30 2001-11-20 ミネソタ・マイニング・アンド・マニュファクチャリング・カンパニー 半導体ウェーハの上面を平坦化する方法
KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
JP4075247B2 (ja) * 1999-09-30 2008-04-16 Ｊｓｒ株式会社 化学機械研磨用水系分散体

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105308129A (zh) * 2013-04-25 2016-02-03 日本嘉柏微电子株式会社 浆料组合物以及基材抛光方法

Also Published As

Publication number Publication date
WO2002081584A1 (en) 2002-10-17
JP2004532521A (ja) 2004-10-21
US20020173243A1 (en) 2002-11-21
KR20040002895A (ko) 2004-01-07
KR100864617B1 (ko) 2008-10-22

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