JP2004532521A - 有機重合体粒子を有する研磨用組成物 - Google Patents

有機重合体粒子を有する研磨用組成物 Download PDF

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Publication number
JP2004532521A
JP2004532521A JP2002579953A JP2002579953A JP2004532521A JP 2004532521 A JP2004532521 A JP 2004532521A JP 2002579953 A JP2002579953 A JP 2002579953A JP 2002579953 A JP2002579953 A JP 2002579953A JP 2004532521 A JP2004532521 A JP 2004532521A
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JP
Japan
Prior art keywords
polishing composition
molecular weight
copper
polymer
number average
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2002579953A
Other languages
English (en)
Japanese (ja)
Other versions
JP2004532521A5 (https=
Inventor
コスタス，ウェズリー・ディー
ラック，クレイグ・ディー
ソーシー，ダニエル・エー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
DuPont Electronic Materials Holding Inc
Original Assignee
Rodel Holdings Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US09/826,525 external-priority patent/US6568997B2/en
Application filed by Rodel Holdings Inc filed Critical Rodel Holdings Inc
Publication of JP2004532521A publication Critical patent/JP2004532521A/ja
Publication of JP2004532521A5 publication Critical patent/JP2004532521A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F3/00—Brightening metals by chemical means
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09G—POLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00—Polishing compositions
    • C09G1/02—Polishing compositions containing abrasives or grinding agents
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1409—Abrasive particles per se
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00—Materials not provided for elsewhere
    • C09K3/14—Anti-slip materials; Abrasives
    • C09K3/1454—Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463—Aqueous liquid suspensions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
JP2002579953A 2001-04-05 2002-03-27 有機重合体粒子を有する研磨用組成物 Pending JP2004532521A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/826,525 US6568997B2 (en) 2001-04-05 2001-04-05 CMP polishing composition for semiconductor devices containing organic polymer particles
US10/055,535 US20020173243A1 (en) 2001-04-05 2002-01-23 Polishing composition having organic polymer particles
PCT/US2002/009805 WO2002081584A1 (en) 2001-04-05 2002-03-27 Polishing composition having organic polymer particles

Publications (2)

Publication Number Publication Date
JP2004532521A true JP2004532521A (ja) 2004-10-21
JP2004532521A5 JP2004532521A5 (https=) 2005-12-22

Family

ID=26734335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2002579953A Pending JP2004532521A (ja) 2001-04-05 2002-03-27 有機重合体粒子を有する研磨用組成物

Country Status (5)

Country Link
US (1) US20020173243A1 (https=)
JP (1) JP2004532521A (https=)
KR (1) KR100864617B1 (https=)
TW (1) TW583294B (https=)
WO (1) WO2002081584A1 (https=)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007287938A (ja) * 2006-04-17 2007-11-01 Adeka Corp 金属ｃｍｐ用研磨組成物
JP2009530849A (ja) * 2006-03-23 2009-08-27 キャボット マイクロエレクトロニクス コーポレイション ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法
JP2011501406A (ja) * 2007-10-10 2011-01-06 チェイル インダストリーズ インコーポレイテッド 金属ｃｍｐスラリー組成物及びこれを用いる研磨方法
US8460414B2 (en) 2005-04-14 2013-06-11 Mitsui Chemicals, Inc. Polishing slurry and polishing material using same

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US6863774B2 (en) * 2001-03-08 2005-03-08 Raytech Innovative Solutions, Inc. Polishing pad for use in chemical-mechanical planarization of semiconductor wafers and method of making same
JP3895949B2 (ja) * 2001-07-18 2007-03-22 株式会社東芝 Ｃｍｐ用スラリー、およびこれを用いた半導体装置の製造方法
JP3692109B2 (ja) * 2002-10-24 2005-09-07 株式会社東芝 半導体装置の製造方法
US6918820B2 (en) * 2003-04-11 2005-07-19 Eastman Kodak Company Polishing compositions comprising polymeric cores having inorganic surface particles and method of use
KR100539983B1 (ko) * 2003-05-15 2006-01-10 학교법인 한양학원 Ｃｍｐ용 세리아 연마제 및 그 제조 방법
JP3892846B2 (ja) * 2003-11-27 2007-03-14 株式会社東芝 Ｃｍｐ用スラリー、研磨方法、および半導体装置の製造方法
CN1654617A (zh) * 2004-02-10 2005-08-17 捷时雅株式会社 清洗用组合物和半导体基板的清洗方法及半导体装置的制造方法
CN1667026B (zh) 2004-03-12 2011-11-30 K.C.科技股份有限公司 抛光浆料及其制备方法和基板的抛光方法
US20060165615A1 (en) * 2004-11-23 2006-07-27 Shende Rajesh V Non-oxidative tooth whiteners for dentifrice application
US20060118760A1 (en) * 2004-12-03 2006-06-08 Yang Andy C Slurry composition and methods for chemical mechanical polishing
KR100641348B1 (ko) 2005-06-03 2006-11-03 주식회사 케이씨텍 Ｃｍｐ용 슬러리와 이의 제조 방법 및 기판의 연마 방법
JP4912791B2 (ja) * 2006-08-21 2012-04-11 Ｊｓｒ株式会社 洗浄用組成物、洗浄方法及び半導体装置の製造方法
WO2008109270A1 (en) * 2007-03-06 2008-09-12 Arkema France Abrasive formulation containing organic polymer particles
CN101680192B (zh) * 2007-06-18 2012-07-11 欧美诺华解决方案公司 纸涂布组合物、涂布纸和方法
WO2010039574A1 (en) 2008-09-30 2010-04-08 The Procter & Gamble Company Liquid hard surface cleaning composition
EP2328998A1 (en) 2008-09-30 2011-06-08 The Procter & Gamble Company Liquid hard surface cleaning composition
ES2582573T3 (es) 2008-09-30 2016-09-13 The Procter & Gamble Company Composiciones limpiadoras líquidas de superficies duras
WO2011087748A1 (en) 2009-12-22 2011-07-21 The Procter & Gamble Company Liquid cleaning and/or cleansing composition
JP5559893B2 (ja) 2009-12-22 2014-07-23 ザ プロクター アンド ギャンブル カンパニー 液体クリーニング及び／又はクレンジング組成物
EP2561056A1 (en) 2010-04-21 2013-02-27 The Procter & Gamble Company Liquid cleaning and/or cleansing composition
JP5702469B2 (ja) 2010-09-21 2015-04-15 ザ プロクター アンド ギャンブルカンパニー 液体洗浄組成物
EP2431452B1 (en) 2010-09-21 2015-07-08 The Procter & Gamble Company Liquid cleaning composition
EP2431451A1 (en) 2010-09-21 2012-03-21 The Procter & Gamble Company Liquid detergent composition with abrasive particles
EP2537917A1 (en) 2011-06-20 2012-12-26 The Procter & Gamble Company Liquid detergent composition with abrasive particles
JP6006306B2 (ja) 2011-06-20 2016-10-12 ザ プロクター アンド ギャンブル カンパニー 液体クリーニング及び／又はクレンジング組成物
US8852643B2 (en) 2011-06-20 2014-10-07 The Procter & Gamble Company Liquid cleaning and/or cleansing composition
JP2014520198A (ja) 2011-06-20 2014-08-21 ザ プロクター アンド ギャンブル カンパニー 液体クリーニング及び／又はクレンジング組成物
EP2719752B1 (en) 2012-10-15 2016-03-16 The Procter and Gamble Company Liquid detergent composition with abrasive particles
JP2014216464A (ja) * 2013-04-25 2014-11-17 日本キャボット・マイクロエレクトロニクス株式会社 スラリー組成物および基板研磨方法
US10068602B2 (en) 2013-06-29 2018-09-04 Hoya Corporation Method for manufacturing glass substrate, method for manufacturing magnetic disk, and polishing liquid composition for glass substrate
CN103725256A (zh) * 2013-12-31 2014-04-16 上海集成电路研发中心有限公司 用于cmp的研磨颗粒体系及抛光液
US20160120786A1 (en) * 2014-11-03 2016-05-05 L'oreal Use of specific acrylates copolymer as spf booster
US9957468B2 (en) 2015-11-06 2018-05-01 The Procter & Gamble Company Shaped particles
KR101943704B1 (ko) * 2016-06-27 2019-01-29 삼성에스디아이 주식회사 금속막용 cmp 슬러리 조성물 및 연마 방법
WO2021081102A1 (en) * 2019-10-24 2021-04-29 Versum Materials Us, Llc High oxide removal rates shallow trench isolation chemical mechanical planarization compositions
US11254839B2 (en) 2019-12-12 2022-02-22 Versum Materials Us, Llc Low oxide trench dishing shallow trench isolation chemical mechanical planarization polishing
KR102939957B1 (ko) * 2019-12-12 2026-03-16 버슘머트리얼즈 유에스, 엘엘씨 산화물 트렌치 디싱이 낮은 얕은 트렌치 절연 화학 기계적 평탄화 연마

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100571892B1 (ko) * 1997-04-30 2006-04-18 미네소타 마이닝 앤드 매뉴팩춰링 캄파니 반도체 웨이퍼 상부 표면의 평탄화 방법
KR100447551B1 (ko) * 1999-01-18 2004-09-08 가부시끼가이샤 도시바 복합 입자 및 그의 제조 방법, 수계 분산체, 화학 기계연마용 수계 분산체 조성물 및 반도체 장치의 제조 방법
JP4075247B2 (ja) * 1999-09-30 2008-04-16 Ｊｓｒ株式会社 化学機械研磨用水系分散体

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8460414B2 (en) 2005-04-14 2013-06-11 Mitsui Chemicals, Inc. Polishing slurry and polishing material using same
JP2009530849A (ja) * 2006-03-23 2009-08-27 キャボット マイクロエレクトロニクス コーポレイション ヨウ素酸塩を含有する化学機械研磨用組成物及び化学機械研磨方法
JP2007287938A (ja) * 2006-04-17 2007-11-01 Adeka Corp 金属ｃｍｐ用研磨組成物
JP2011501406A (ja) * 2007-10-10 2011-01-06 チェイル インダストリーズ インコーポレイテッド 金属ｃｍｐスラリー組成物及びこれを用いる研磨方法

Also Published As

Publication number Publication date
KR100864617B1 (ko) 2008-10-22
US20020173243A1 (en) 2002-11-21
TW583294B (en) 2004-04-11
KR20040002895A (ko) 2004-01-07
WO2002081584A1 (en) 2002-10-17

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