TW574396B - Method and apparatus for coating a substrate in a vacuum - Google Patents

Method and apparatus for coating a substrate in a vacuum Download PDF

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Publication number
TW574396B
TW574396B TW89122148A TW89122148A TW574396B TW 574396 B TW574396 B TW 574396B TW 89122148 A TW89122148 A TW 89122148A TW 89122148 A TW89122148 A TW 89122148A TW 574396 B TW574396 B TW 574396B
Authority
TW
Taiwan
Prior art keywords
source
patent application
scope
item
material source
Prior art date
Application number
TW89122148A
Other languages
English (en)
Chinese (zh)
Inventor
Gary L Smith
Original Assignee
Kurt J Lesker Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kurt J Lesker Company filed Critical Kurt J Lesker Company
Application granted granted Critical
Publication of TW574396B publication Critical patent/TW574396B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C23C14/243—Crucibles for source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12—Organic material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW89122148A 1999-10-22 2000-10-20 Method and apparatus for coating a substrate in a vacuum TW574396B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16109499P 1999-10-22 1999-10-22

Publications (1)

Publication Number Publication Date
TW574396B true TW574396B (en) 2004-02-01

Family

ID=22579796

Family Applications (1)

Application Number Title Priority Date Filing Date
TW89122148A TW574396B (en) 1999-10-22 2000-10-20 Method and apparatus for coating a substrate in a vacuum

Country Status (9)

Country Link
EP (1) EP1246951A4 (fr)
JP (1) JP2003513169A (fr)
KR (1) KR100495751B1 (fr)
CN (1) CN1175126C (fr)
AU (1) AU1339401A (fr)
CA (1) CA2388178A1 (fr)
DE (1) DE10085115T1 (fr)
TW (1) TW574396B (fr)
WO (1) WO2001031081A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI693859B (zh) * 2015-01-22 2020-05-11 南韓商三星顯示器有限公司 具有可變體積型坩堝之沈積源

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US20020011205A1 (en) 2000-05-02 2002-01-31 Shunpei Yamazaki Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device
JP4704605B2 (ja) * 2001-05-23 2011-06-15 淳二 城戸 連続蒸着装置、蒸着装置及び蒸着方法
SG113448A1 (en) * 2002-02-25 2005-08-29 Semiconductor Energy Lab Fabrication system and a fabrication method of a light emitting device
KR100473485B1 (ko) * 2002-03-19 2005-03-09 주식회사 이노벡스 유기 반도체 소자 박막 제작을 위한 선형 증발원
EP1369499A3 (fr) 2002-04-15 2004-10-20 Semiconductor Energy Laboratory Co., Ltd. Méthode et appareillage pour fabriquer un dispositif émetteur de lumière
US6749906B2 (en) 2002-04-25 2004-06-15 Eastman Kodak Company Thermal physical vapor deposition apparatus with detachable vapor source(s) and method
US20040035360A1 (en) 2002-05-17 2004-02-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
TWI277363B (en) 2002-08-30 2007-03-21 Semiconductor Energy Lab Fabrication system, light-emitting device and fabricating method of organic compound-containing layer
US20040123804A1 (en) 2002-09-20 2004-07-01 Semiconductor Energy Laboratory Co., Ltd. Fabrication system and manufacturing method of light emitting device
US7211461B2 (en) 2003-02-14 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
JP4493926B2 (ja) 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置
US7211454B2 (en) 2003-07-25 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate
US8123862B2 (en) 2003-08-15 2012-02-28 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus and manufacturing apparatus
JP4551996B2 (ja) * 2003-10-09 2010-09-29 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー 蒸発装置
US20050241585A1 (en) * 2004-04-30 2005-11-03 Eastman Kodak Company System for vaporizing materials onto a substrate surface
ITMI20042279A1 (it) 2004-11-24 2005-02-24 Getters Spa Sistema dispensatore di metalli alcalini in grado di dispensare quantita' elevate di metalli
JP2006225757A (ja) * 2005-01-21 2006-08-31 Mitsubishi Heavy Ind Ltd 真空蒸着装置
KR100635496B1 (ko) * 2005-02-25 2006-10-17 삼성에스디아이 주식회사 격벽을 구비하는 측면 분사형 선형 증발원 및 그 증발원을구비하는 증착장치
US7433141B2 (en) 2005-03-09 2008-10-07 Tandberg Data Corporation Data randomization for rewriting in recording/reproduction apparatus
JP4696710B2 (ja) * 2005-06-15 2011-06-08 ソニー株式会社 蒸着成膜装置および蒸着源
KR100745619B1 (ko) * 2006-04-11 2007-08-02 한국전기연구원 플룸 형상 제어 레이저 증착 시스템
KR101108152B1 (ko) * 2009-04-30 2012-01-31 삼성모바일디스플레이주식회사 증착 소스
KR101094299B1 (ko) 2009-12-17 2011-12-19 삼성모바일디스플레이주식회사 선형 증발원 및 이를 포함하는 증착 장치
KR102077803B1 (ko) * 2013-05-21 2020-02-17 삼성디스플레이 주식회사 증착원 및 유기층 증착 장치
CN104178734B (zh) * 2014-07-21 2016-06-15 京东方科技集团股份有限公司 蒸发镀膜装置
KR102488260B1 (ko) * 2016-03-07 2023-01-13 삼성디스플레이 주식회사 증착 장치 및 표시 장치의 제조 방법
CN106148878B (zh) * 2016-06-24 2018-06-08 中南大学 一种模拟高温喷镀过程的装置及其使用方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI693859B (zh) * 2015-01-22 2020-05-11 南韓商三星顯示器有限公司 具有可變體積型坩堝之沈積源

Also Published As

Publication number Publication date
KR20020068039A (ko) 2002-08-24
DE10085115T1 (de) 2002-11-07
AU1339401A (en) 2001-05-08
CA2388178A1 (fr) 2001-05-03
KR100495751B1 (ko) 2005-06-17
WO2001031081A1 (fr) 2001-05-03
CN1175126C (zh) 2004-11-10
EP1246951A4 (fr) 2004-10-13
EP1246951A1 (fr) 2002-10-09
CN1402800A (zh) 2003-03-12
JP2003513169A (ja) 2003-04-08

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