JP2003513169A - 真空で基板を被覆するための方法及び装置 - Google Patents
真空で基板を被覆するための方法及び装置Info
- Publication number
- JP2003513169A JP2003513169A JP2001533213A JP2001533213A JP2003513169A JP 2003513169 A JP2003513169 A JP 2003513169A JP 2001533213 A JP2001533213 A JP 2001533213A JP 2001533213 A JP2001533213 A JP 2001533213A JP 2003513169 A JP2003513169 A JP 2003513169A
- Authority
- JP
- Japan
- Prior art keywords
- material source
- source
- substrate
- conduit
- outlet opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 89
- 238000000576 coating method Methods 0.000 title claims abstract description 23
- 239000011248 coating agent Substances 0.000 title claims abstract description 21
- 238000000034 method Methods 0.000 title claims abstract description 17
- 239000000463 material Substances 0.000 claims abstract description 173
- 230000008021 deposition Effects 0.000 claims abstract description 33
- 238000000151 deposition Methods 0.000 claims description 30
- 239000000126 substance Substances 0.000 claims description 26
- 238000001771 vacuum deposition Methods 0.000 claims description 23
- 238000010438 heat treatment Methods 0.000 claims description 18
- 239000004020 conductor Substances 0.000 claims description 6
- 238000011068 loading method Methods 0.000 claims description 6
- 239000000615 nonconductor Substances 0.000 claims description 6
- 150000001875 compounds Chemical class 0.000 claims description 5
- 239000012530 fluid Substances 0.000 claims description 4
- 230000008569 process Effects 0.000 claims description 4
- 238000004891 communication Methods 0.000 claims description 3
- 238000004886 process control Methods 0.000 claims description 2
- 230000004907 flux Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- 238000009826 distribution Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 3
- 238000002955 isolation Methods 0.000 description 3
- 239000010453 quartz Substances 0.000 description 3
- 239000000523 sample Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000004075 alteration Effects 0.000 description 2
- 238000009833 condensation Methods 0.000 description 2
- 230000005494 condensation Effects 0.000 description 2
- 238000012937 correction Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000007547 defect Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 239000012777 electrically insulating material Substances 0.000 description 2
- 238000001704 evaporation Methods 0.000 description 2
- 230000008020 evaporation Effects 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 230000006698 induction Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- 230000008016 vaporization Effects 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000005234 chemical deposition Methods 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000003292 diminished effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012806 monitoring device Methods 0.000 description 1
- 229910001120 nichrome Inorganic materials 0.000 description 1
- 150000002894 organic compounds Chemical class 0.000 description 1
- 239000012044 organic layer Substances 0.000 description 1
- 230000002285 radioactive effect Effects 0.000 description 1
- 238000001953 recrystallisation Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000013519 translation Methods 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/542—Controlling the film thickness or evaporation rate
- C23C14/543—Controlling the film thickness or evaporation rate using measurement on the vapor source
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/243—Crucibles for source material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/12—Organic material
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US16109499P | 1999-10-22 | 1999-10-22 | |
| US60/161,094 | 1999-10-22 | ||
| PCT/US2000/029099 WO2001031081A1 (fr) | 1999-10-22 | 2000-10-20 | Procede et appareil destine au depot sous vide d'un revetement sur un substrat |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JP2003513169A true JP2003513169A (ja) | 2003-04-08 |
| JP2003513169A5 JP2003513169A5 (fr) | 2005-12-22 |
Family
ID=22579796
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2001533213A Pending JP2003513169A (ja) | 1999-10-22 | 2000-10-20 | 真空で基板を被覆するための方法及び装置 |
Country Status (9)
| Country | Link |
|---|---|
| EP (1) | EP1246951A4 (fr) |
| JP (1) | JP2003513169A (fr) |
| KR (1) | KR100495751B1 (fr) |
| CN (1) | CN1175126C (fr) |
| AU (1) | AU1339401A (fr) |
| CA (1) | CA2388178A1 (fr) |
| DE (1) | DE10085115T1 (fr) |
| TW (1) | TW574396B (fr) |
| WO (1) | WO2001031081A1 (fr) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005113240A (ja) * | 2003-10-09 | 2005-04-28 | Kodak Kk | 蒸発装置 |
| JP2006225757A (ja) * | 2005-01-21 | 2006-08-31 | Mitsubishi Heavy Ind Ltd | 真空蒸着装置 |
| JP2006348337A (ja) * | 2005-06-15 | 2006-12-28 | Sony Corp | 蒸着成膜装置および蒸着源 |
| JP2013117073A (ja) * | 2009-04-30 | 2013-06-13 | Samsung Display Co Ltd | 蒸着ソース |
Families Citing this family (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW490714B (en) | 1999-12-27 | 2002-06-11 | Semiconductor Energy Lab | Film formation apparatus and method for forming a film |
| US20020011205A1 (en) | 2000-05-02 | 2002-01-31 | Shunpei Yamazaki | Film-forming apparatus, method of cleaning the same, and method of manufacturing a light-emitting device |
| JP4704605B2 (ja) * | 2001-05-23 | 2011-06-15 | 淳二 城戸 | 連続蒸着装置、蒸着装置及び蒸着方法 |
| SG113448A1 (en) * | 2002-02-25 | 2005-08-29 | Semiconductor Energy Lab | Fabrication system and a fabrication method of a light emitting device |
| KR100473485B1 (ko) * | 2002-03-19 | 2005-03-09 | 주식회사 이노벡스 | 유기 반도체 소자 박막 제작을 위한 선형 증발원 |
| US7309269B2 (en) | 2002-04-15 | 2007-12-18 | Semiconductor Energy Laboratory Co., Ltd. | Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device |
| US6749906B2 (en) | 2002-04-25 | 2004-06-15 | Eastman Kodak Company | Thermal physical vapor deposition apparatus with detachable vapor source(s) and method |
| US20040035360A1 (en) | 2002-05-17 | 2004-02-26 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
| TWI277363B (en) | 2002-08-30 | 2007-03-21 | Semiconductor Energy Lab | Fabrication system, light-emitting device and fabricating method of organic compound-containing layer |
| US20040123804A1 (en) | 2002-09-20 | 2004-07-01 | Semiconductor Energy Laboratory Co., Ltd. | Fabrication system and manufacturing method of light emitting device |
| US7211461B2 (en) | 2003-02-14 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing apparatus |
| JP4493926B2 (ja) | 2003-04-25 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 製造装置 |
| US7211454B2 (en) | 2003-07-25 | 2007-05-01 | Semiconductor Energy Laboratory Co., Ltd. | Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate |
| US8123862B2 (en) | 2003-08-15 | 2012-02-28 | Semiconductor Energy Laboratory Co., Ltd. | Deposition apparatus and manufacturing apparatus |
| US20050241585A1 (en) * | 2004-04-30 | 2005-11-03 | Eastman Kodak Company | System for vaporizing materials onto a substrate surface |
| ITMI20042279A1 (it) | 2004-11-24 | 2005-02-24 | Getters Spa | Sistema dispensatore di metalli alcalini in grado di dispensare quantita' elevate di metalli |
| KR100635496B1 (ko) * | 2005-02-25 | 2006-10-17 | 삼성에스디아이 주식회사 | 격벽을 구비하는 측면 분사형 선형 증발원 및 그 증발원을구비하는 증착장치 |
| US7433141B2 (en) | 2005-03-09 | 2008-10-07 | Tandberg Data Corporation | Data randomization for rewriting in recording/reproduction apparatus |
| KR100745619B1 (ko) * | 2006-04-11 | 2007-08-02 | 한국전기연구원 | 플룸 형상 제어 레이저 증착 시스템 |
| KR101094299B1 (ko) * | 2009-12-17 | 2011-12-19 | 삼성모바일디스플레이주식회사 | 선형 증발원 및 이를 포함하는 증착 장치 |
| KR102077803B1 (ko) * | 2013-05-21 | 2020-02-17 | 삼성디스플레이 주식회사 | 증착원 및 유기층 증착 장치 |
| CN104178734B (zh) * | 2014-07-21 | 2016-06-15 | 京东方科技集团股份有限公司 | 蒸发镀膜装置 |
| KR102319998B1 (ko) * | 2015-01-22 | 2021-11-01 | 삼성디스플레이 주식회사 | 볼륨 가변형 도가니를 구비한 증착원 |
| KR102488260B1 (ko) * | 2016-03-07 | 2023-01-13 | 삼성디스플레이 주식회사 | 증착 장치 및 표시 장치의 제조 방법 |
| CN106148878B (zh) * | 2016-06-24 | 2018-06-08 | 中南大学 | 一种模拟高温喷镀过程的装置及其使用方法 |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE970246C (de) * | 1948-10-02 | 1958-08-28 | Siemens Ag | Vorrichtung zur laufenden Bedampfung endloser Gebilde |
| GB685269A (en) * | 1951-02-02 | 1952-12-31 | Nat Res Corp | Apparatus and process for coating a substrate with a metal |
| US3746502A (en) * | 1971-12-20 | 1973-07-17 | Xerox Corp | Evaporation crucible |
| DE2436431B2 (de) * | 1974-07-29 | 1978-07-27 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Verdampfer und Verfahren zum Herstellen von Aufdampfschichten, insbesondere aus Selen |
| US4023523A (en) * | 1975-04-23 | 1977-05-17 | Xerox Corporation | Coater hardware and method for obtaining uniform photoconductive layers on a xerographic photoreceptor |
| US4264803A (en) * | 1978-01-10 | 1981-04-28 | Union Carbide Corporation | Resistance-heated pyrolytic boron nitride coated graphite boat for metal vaporization |
| US4332838A (en) * | 1980-09-24 | 1982-06-01 | Wegrzyn James E | Particulate thin film fabrication process |
| JPS57169082A (en) * | 1981-04-08 | 1982-10-18 | Mitsubishi Heavy Ind Ltd | Continuous vacuum vapor-depositing method |
| JPS5943869A (ja) * | 1982-09-04 | 1984-03-12 | Konishiroku Photo Ind Co Ltd | 蒸着方法 |
| DE3330092A1 (de) * | 1983-08-20 | 1985-03-07 | Leybold-Heraeus GmbH, 5000 Köln | Verfahren zum einstellen der oertlichen verdampfungsleistung an verdampfern in vakuumaufdampfprozessen |
| IT1197806B (it) * | 1986-08-01 | 1988-12-06 | Metalvuoto Films Spa | Procedimento ed apparecchiatura per la realizzazione di pellicole metallizzate per condesatori elettrici e prodotti cosi' ottenuti |
| GB2211209A (en) * | 1987-10-16 | 1989-06-28 | Philips Electronic Associated | A method of forming a defect mixed oxide |
| US5182567A (en) * | 1990-10-12 | 1993-01-26 | Custom Metallizing Services, Inc. | Retrofittable vapor source for vacuum metallizing utilizing spatter reduction means |
| US5167984A (en) * | 1990-12-06 | 1992-12-01 | Xerox Corporation | Vacuum deposition process |
| DE4123342C2 (de) * | 1991-07-15 | 1999-08-19 | Leybold Ag | Reihenverdampfer für Vakuumbedampfungsanlagen |
| US5336324A (en) * | 1991-12-04 | 1994-08-09 | Emcore Corporation | Apparatus for depositing a coating on a substrate |
| DE4203632C2 (de) * | 1992-02-08 | 2003-01-23 | Applied Films Gmbh & Co Kg | Vakuumbeschichtungsanlage |
| US5803976A (en) * | 1993-11-09 | 1998-09-08 | Imperial Chemical Industries Plc | Vacuum web coating |
| US5433791A (en) * | 1994-05-26 | 1995-07-18 | Hughes Aircraft Company | MBE apparatus with photo-cracker cell |
| JPH0853763A (ja) * | 1994-06-06 | 1996-02-27 | Matsushita Electric Ind Co Ltd | 薄膜の製造方法 |
| DE4422697C1 (de) * | 1994-06-29 | 1996-01-25 | Zsw | Verdampferquelle für eine Aufdampfanlage und ihre Verwendung |
| US5709753A (en) * | 1995-10-27 | 1998-01-20 | Specialty Coating Sysetms, Inc. | Parylene deposition apparatus including a heated and cooled dimer crucible |
| GB2339800B (en) * | 1998-07-24 | 2003-04-09 | Gen Vacuum Equipment Ltd | A vacuum process for depositing zinc sulphide and other coatings on flexible moving web |
| US6082296A (en) * | 1999-09-22 | 2000-07-04 | Xerox Corporation | Thin film deposition chamber |
-
2000
- 2000-10-20 DE DE10085115T patent/DE10085115T1/de not_active Withdrawn
- 2000-10-20 TW TW89122148A patent/TW574396B/zh not_active IP Right Cessation
- 2000-10-20 WO PCT/US2000/029099 patent/WO2001031081A1/fr not_active Application Discontinuation
- 2000-10-20 JP JP2001533213A patent/JP2003513169A/ja active Pending
- 2000-10-20 KR KR10-2002-7005091A patent/KR100495751B1/ko not_active IP Right Cessation
- 2000-10-20 CA CA002388178A patent/CA2388178A1/fr not_active Abandoned
- 2000-10-20 AU AU13394/01A patent/AU1339401A/en not_active Abandoned
- 2000-10-20 CN CNB00816326XA patent/CN1175126C/zh not_active Expired - Fee Related
- 2000-10-20 EP EP00975328A patent/EP1246951A4/fr not_active Withdrawn
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2005113240A (ja) * | 2003-10-09 | 2005-04-28 | Kodak Kk | 蒸発装置 |
| JP4551996B2 (ja) * | 2003-10-09 | 2010-09-29 | グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー | 蒸発装置 |
| JP2006225757A (ja) * | 2005-01-21 | 2006-08-31 | Mitsubishi Heavy Ind Ltd | 真空蒸着装置 |
| JP2006348337A (ja) * | 2005-06-15 | 2006-12-28 | Sony Corp | 蒸着成膜装置および蒸着源 |
| JP4696710B2 (ja) * | 2005-06-15 | 2011-06-08 | ソニー株式会社 | 蒸着成膜装置および蒸着源 |
| JP2013117073A (ja) * | 2009-04-30 | 2013-06-13 | Samsung Display Co Ltd | 蒸着ソース |
Also Published As
| Publication number | Publication date |
|---|---|
| AU1339401A (en) | 2001-05-08 |
| KR20020068039A (ko) | 2002-08-24 |
| CN1402800A (zh) | 2003-03-12 |
| CN1175126C (zh) | 2004-11-10 |
| DE10085115T1 (de) | 2002-11-07 |
| WO2001031081A1 (fr) | 2001-05-03 |
| TW574396B (en) | 2004-02-01 |
| CA2388178A1 (fr) | 2001-05-03 |
| KR100495751B1 (ko) | 2005-06-17 |
| EP1246951A1 (fr) | 2002-10-09 |
| EP1246951A4 (fr) | 2004-10-13 |
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