TW574396B - Method and apparatus for coating a substrate in a vacuum - Google Patents

Method and apparatus for coating a substrate in a vacuum Download PDF

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Publication number
TW574396B
TW574396B TW89122148A TW89122148A TW574396B TW 574396 B TW574396 B TW 574396B TW 89122148 A TW89122148 A TW 89122148A TW 89122148 A TW89122148 A TW 89122148A TW 574396 B TW574396 B TW 574396B
Authority
TW
Taiwan
Prior art keywords
source
patent application
scope
item
material source
Prior art date
Application number
TW89122148A
Other languages
English (en)
Chinese (zh)
Inventor
Gary L Smith
Original Assignee
Kurt J Lesker Company
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kurt J Lesker Company filed Critical Kurt J Lesker Company
Application granted granted Critical
Publication of TW574396B publication Critical patent/TW574396B/zh

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Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54Controlling or regulating the coating process
    • C23C14/542Controlling the film thickness or evaporation rate
    • C23C14/543Controlling the film thickness or evaporation rate using measurement on the vapor source
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation
    • C23C14/243Crucibles for source material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/12Organic material
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24Vacuum evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
TW89122148A 1999-10-22 2000-10-20 Method and apparatus for coating a substrate in a vacuum TW574396B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16109499P 1999-10-22 1999-10-22

Publications (1)

Publication Number Publication Date
TW574396B true TW574396B (en) 2004-02-01

Family

ID=22579796

Family Applications (1)

Application Number Title Priority Date Filing Date
TW89122148A TW574396B (en) 1999-10-22 2000-10-20 Method and apparatus for coating a substrate in a vacuum

Country Status (9)

Country Link
EP (1) EP1246951A4 (enrdf_load_stackoverflow)
JP (1) JP2003513169A (enrdf_load_stackoverflow)
KR (1) KR100495751B1 (enrdf_load_stackoverflow)
CN (1) CN1175126C (enrdf_load_stackoverflow)
AU (1) AU1339401A (enrdf_load_stackoverflow)
CA (1) CA2388178A1 (enrdf_load_stackoverflow)
DE (1) DE10085115T1 (enrdf_load_stackoverflow)
TW (1) TW574396B (enrdf_load_stackoverflow)
WO (1) WO2001031081A1 (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
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TWI693859B (zh) * 2015-01-22 2020-05-11 南韓商三星顯示器有限公司 具有可變體積型坩堝之沈積源

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US7517551B2 (en) 2000-05-12 2009-04-14 Semiconductor Energy Laboratory Co., Ltd. Method of manufacturing a light-emitting device
JP4704605B2 (ja) * 2001-05-23 2011-06-15 淳二 城戸 連続蒸着装置、蒸着装置及び蒸着方法
SG113448A1 (en) * 2002-02-25 2005-08-29 Semiconductor Energy Lab Fabrication system and a fabrication method of a light emitting device
KR100473485B1 (ko) * 2002-03-19 2005-03-09 주식회사 이노벡스 유기 반도체 소자 박막 제작을 위한 선형 증발원
EP1369499A3 (en) 2002-04-15 2004-10-20 Semiconductor Energy Laboratory Co., Ltd. Method of fabricating light-emitting device and apparatus for manufacturing light-emitting device
US6749906B2 (en) 2002-04-25 2004-06-15 Eastman Kodak Company Thermal physical vapor deposition apparatus with detachable vapor source(s) and method
US20040035360A1 (en) 2002-05-17 2004-02-26 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
TWI277363B (en) 2002-08-30 2007-03-21 Semiconductor Energy Lab Fabrication system, light-emitting device and fabricating method of organic compound-containing layer
KR101006938B1 (ko) 2002-09-20 2011-01-10 가부시키가이샤 한도오따이 에네루기 켄큐쇼 제조 시스템 및 발광장치 제작방법
US7211461B2 (en) 2003-02-14 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing apparatus
JP4493926B2 (ja) 2003-04-25 2010-06-30 株式会社半導体エネルギー研究所 製造装置
US7211454B2 (en) 2003-07-25 2007-05-01 Semiconductor Energy Laboratory Co., Ltd. Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate
US8123862B2 (en) 2003-08-15 2012-02-28 Semiconductor Energy Laboratory Co., Ltd. Deposition apparatus and manufacturing apparatus
JP4551996B2 (ja) * 2003-10-09 2010-09-29 グローバル・オーエルイーディー・テクノロジー・リミテッド・ライアビリティ・カンパニー 蒸発装置
US20050241585A1 (en) * 2004-04-30 2005-11-03 Eastman Kodak Company System for vaporizing materials onto a substrate surface
ITMI20042279A1 (it) * 2004-11-24 2005-02-24 Getters Spa Sistema dispensatore di metalli alcalini in grado di dispensare quantita' elevate di metalli
JP2006225757A (ja) * 2005-01-21 2006-08-31 Mitsubishi Heavy Ind Ltd 真空蒸着装置
KR100635496B1 (ko) * 2005-02-25 2006-10-17 삼성에스디아이 주식회사 격벽을 구비하는 측면 분사형 선형 증발원 및 그 증발원을구비하는 증착장치
US7433141B2 (en) 2005-03-09 2008-10-07 Tandberg Data Corporation Data randomization for rewriting in recording/reproduction apparatus
JP4696710B2 (ja) * 2005-06-15 2011-06-08 ソニー株式会社 蒸着成膜装置および蒸着源
KR100745619B1 (ko) * 2006-04-11 2007-08-02 한국전기연구원 플룸 형상 제어 레이저 증착 시스템
KR101108152B1 (ko) * 2009-04-30 2012-01-31 삼성모바일디스플레이주식회사 증착 소스
KR101094299B1 (ko) 2009-12-17 2011-12-19 삼성모바일디스플레이주식회사 선형 증발원 및 이를 포함하는 증착 장치
KR102077803B1 (ko) * 2013-05-21 2020-02-17 삼성디스플레이 주식회사 증착원 및 유기층 증착 장치
CN104178734B (zh) * 2014-07-21 2016-06-15 京东方科技集团股份有限公司 蒸发镀膜装置
KR102488260B1 (ko) * 2016-03-07 2023-01-13 삼성디스플레이 주식회사 증착 장치 및 표시 장치의 제조 방법
CN106148878B (zh) * 2016-06-24 2018-06-08 中南大学 一种模拟高温喷镀过程的装置及其使用方法

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI693859B (zh) * 2015-01-22 2020-05-11 南韓商三星顯示器有限公司 具有可變體積型坩堝之沈積源

Also Published As

Publication number Publication date
AU1339401A (en) 2001-05-08
EP1246951A4 (en) 2004-10-13
DE10085115T1 (de) 2002-11-07
CN1402800A (zh) 2003-03-12
WO2001031081A1 (en) 2001-05-03
CA2388178A1 (en) 2001-05-03
KR20020068039A (ko) 2002-08-24
CN1175126C (zh) 2004-11-10
EP1246951A1 (en) 2002-10-09
JP2003513169A (ja) 2003-04-08
KR100495751B1 (ko) 2005-06-17

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