TW556326B - A method for providing bitline contacts in a memory cell array and a memory cell array having bitline contacts - Google Patents
A method for providing bitline contacts in a memory cell array and a memory cell array having bitline contacts Download PDFInfo
- Publication number
- TW556326B TW556326B TW091110159A TW91110159A TW556326B TW 556326 B TW556326 B TW 556326B TW 091110159 A TW091110159 A TW 091110159A TW 91110159 A TW91110159 A TW 91110159A TW 556326 B TW556326 B TW 556326B
- Authority
- TW
- Taiwan
- Prior art keywords
- bit line
- memory cell
- cell array
- electrically conductive
- conductive material
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 73
- 239000004020 conductor Substances 0.000 claims abstract description 41
- 150000004767 nitrides Chemical class 0.000 claims abstract description 32
- 239000000463 material Substances 0.000 claims description 52
- 238000002955 isolation Methods 0.000 claims description 51
- 229920002120 photoresistant polymer Polymers 0.000 claims description 45
- 238000005530 etching Methods 0.000 claims description 44
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 230000002093 peripheral effect Effects 0.000 claims description 28
- 238000000151 deposition Methods 0.000 claims description 12
- 239000000758 substrate Substances 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 9
- 238000001459 lithography Methods 0.000 claims description 8
- 238000003491 array Methods 0.000 claims description 6
- 239000011521 glass Substances 0.000 claims description 6
- 239000004065 semiconductor Substances 0.000 claims description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 2
- 229910052796 boron Inorganic materials 0.000 claims description 2
- BVKZGUZCCUSVTD-UHFFFAOYSA-N carbonic acid Chemical compound OC(O)=O BVKZGUZCCUSVTD-UHFFFAOYSA-N 0.000 claims description 2
- 230000005669 field effect Effects 0.000 claims description 2
- 239000012212 insulator Substances 0.000 claims description 2
- 239000000203 mixture Substances 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 3
- 238000000576 coating method Methods 0.000 claims 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims 1
- 229910052698 phosphorus Inorganic materials 0.000 claims 1
- 239000011574 phosphorus Substances 0.000 claims 1
- 239000013589 supplement Substances 0.000 claims 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 93
- 235000012239 silicon dioxide Nutrition 0.000 description 44
- 239000000377 silicon dioxide Substances 0.000 description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 23
- 229910052581 Si3N4 Inorganic materials 0.000 description 20
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 20
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 14
- 229910052710 silicon Inorganic materials 0.000 description 14
- 239000010703 silicon Substances 0.000 description 14
- 239000000126 substance Substances 0.000 description 11
- 238000005498 polishing Methods 0.000 description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- 229910052814 silicon oxide Inorganic materials 0.000 description 6
- 239000007789 gas Substances 0.000 description 5
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 4
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 4
- 238000007796 conventional method Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000005137 deposition process Methods 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000013467 fragmentation Methods 0.000 description 3
- 238000006062 fragmentation reaction Methods 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000009545 invasion Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 150000002739 metals Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000005192 partition Methods 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 239000005368 silicate glass Substances 0.000 description 2
- 125000006850 spacer group Chemical group 0.000 description 2
- 239000004575 stone Substances 0.000 description 2
- WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 description 2
- 229910021342 tungsten silicide Inorganic materials 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 241000239290 Araneae Species 0.000 description 1
- 229910052778 Plutonium Inorganic materials 0.000 description 1
- GDFCWFBWQUEQIJ-UHFFFAOYSA-N [B].[P] Chemical compound [B].[P] GDFCWFBWQUEQIJ-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- -1 arsenic ions Chemical class 0.000 description 1
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000005388 borosilicate glass Substances 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 239000000839 emulsion Substances 0.000 description 1
- 230000001747 exhibiting effect Effects 0.000 description 1
- 239000002784 hot electron Substances 0.000 description 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 230000002045 lasting effect Effects 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- DOTMOQHOJINYBL-UHFFFAOYSA-N molecular nitrogen;molecular oxygen Chemical compound N#N.O=O DOTMOQHOJINYBL-UHFFFAOYSA-N 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229910021332 silicide Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 239000011030 tanzanite Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B20/00—Read-only memory [ROM] devices
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| EP01113178A EP1263050A1 (en) | 2001-05-30 | 2001-05-30 | Bitline contacts in a memory cell array |
| EP01113179A EP1263051A1 (en) | 2001-05-30 | 2001-05-30 | Bitline contacts in a memory cell array |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW556326B true TW556326B (en) | 2003-10-01 |
Family
ID=26076602
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091110159A TW556326B (en) | 2001-05-30 | 2002-05-15 | A method for providing bitline contacts in a memory cell array and a memory cell array having bitline contacts |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US7008849B2 (enExample) |
| EP (1) | EP1390981A2 (enExample) |
| JP (1) | JP2004529500A (enExample) |
| IL (1) | IL159112A0 (enExample) |
| TW (1) | TW556326B (enExample) |
| WO (1) | WO2002097890A2 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6794764B1 (en) * | 2003-03-05 | 2004-09-21 | Advanced Micro Devices, Inc. | Charge-trapping memory arrays resistant to damage from contact hole information |
| JPWO2007000808A1 (ja) * | 2005-06-28 | 2009-01-22 | スパンション エルエルシー | 半導体装置およびその製造方法 |
| US7977218B2 (en) * | 2006-12-26 | 2011-07-12 | Spansion Llc | Thin oxide dummy tiling as charge protection |
| US11631680B2 (en) | 2018-10-18 | 2023-04-18 | Applied Materials, Inc. | Methods and apparatus for smoothing dynamic random access memory bit line metal |
| US10700072B2 (en) | 2018-10-18 | 2020-06-30 | Applied Materials, Inc. | Cap layer for bit line resistance reduction |
| US10903112B2 (en) | 2018-10-18 | 2021-01-26 | Applied Materials, Inc. | Methods and apparatus for smoothing dynamic random access memory bit line metal |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4390971A (en) * | 1978-03-20 | 1983-06-28 | Texas Instruments Incorporated | Post-metal programmable MOS read only memory |
| US5168334A (en) * | 1987-07-31 | 1992-12-01 | Texas Instruments, Incorporated | Non-volatile semiconductor memory |
| US5308777A (en) * | 1993-07-28 | 1994-05-03 | United Microelectronics Corporation | Mask ROM process |
| JPH07307388A (ja) * | 1994-02-04 | 1995-11-21 | Advanced Micro Devices Inc | トランジスタのアレイおよびその形成方法 |
| US5455535A (en) * | 1994-03-03 | 1995-10-03 | National Semiconductor Corporation | Rail to rail operational amplifier intermediate stage |
| US5471416A (en) * | 1994-11-14 | 1995-11-28 | National Semiconductor Corporation | Method of programming a CMOS read only memory at the second metal layer in a two-metal process |
| US5815433A (en) * | 1994-12-27 | 1998-09-29 | Nkk Corporation | Mask ROM device with gate insulation film based in pad oxide film and/or nitride film |
| GB2298739B (en) * | 1995-03-07 | 1999-02-17 | Hyundai Electronics Ind | Method of making a mask ROM |
| US5768192A (en) * | 1996-07-23 | 1998-06-16 | Saifun Semiconductors, Ltd. | Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping |
| JP3420694B2 (ja) * | 1996-12-27 | 2003-06-30 | 株式会社東芝 | スタンダードセル方式の集積回路 |
| DE69636738D1 (de) * | 1996-12-27 | 2007-01-11 | St Microelectronics Srl | Kontaktstruktur für elektronische EPROM oder flash EPROM Halbleiterschaltungen und ihr Herstellungsverfahren |
| US5915203A (en) * | 1997-06-10 | 1999-06-22 | Vlsi Technology, Inc. | Method for producing deep submicron interconnect vias |
| US5966603A (en) * | 1997-06-11 | 1999-10-12 | Saifun Semiconductors Ltd. | NROM fabrication method with a periphery portion |
| US5963465A (en) * | 1997-12-12 | 1999-10-05 | Saifun Semiconductors, Ltd. | Symmetric segmented memory array architecture |
| US6133095A (en) * | 1999-02-04 | 2000-10-17 | Saifun Semiconductors Ltd. | Method for creating diffusion areas for sources and drains without an etch step |
| KR20010018728A (ko) * | 1999-08-21 | 2001-03-15 | 김영환 | 마스크 롬의 제조 방법 |
| US6124192A (en) * | 1999-09-27 | 2000-09-26 | Vanguard International Semicondutor Corporation | Method for fabricating ultra-small interconnections using simplified patterns and sidewall contact plugs |
-
2002
- 2002-05-15 TW TW091110159A patent/TW556326B/zh active
- 2002-05-27 JP JP2003500974A patent/JP2004529500A/ja active Pending
- 2002-05-27 IL IL15911202A patent/IL159112A0/xx unknown
- 2002-05-27 EP EP02735387A patent/EP1390981A2/en not_active Withdrawn
- 2002-05-27 WO PCT/EP2002/005805 patent/WO2002097890A2/en not_active Ceased
-
2003
- 2003-12-01 US US10/724,903 patent/US7008849B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1390981A2 (en) | 2004-02-25 |
| JP2004529500A (ja) | 2004-09-24 |
| US20040120198A1 (en) | 2004-06-24 |
| WO2002097890A2 (en) | 2002-12-05 |
| IL159112A0 (en) | 2004-05-12 |
| US7008849B2 (en) | 2006-03-07 |
| WO2002097890A3 (en) | 2003-10-16 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |