IL159112A0 - Bitline contacts in a memory cell array - Google Patents

Bitline contacts in a memory cell array

Info

Publication number
IL159112A0
IL159112A0 IL15911202A IL15911202A IL159112A0 IL 159112 A0 IL159112 A0 IL 159112A0 IL 15911202 A IL15911202 A IL 15911202A IL 15911202 A IL15911202 A IL 15911202A IL 159112 A0 IL159112 A0 IL 159112A0
Authority
IL
Israel
Prior art keywords
memory cell
cell array
bitline contacts
bitline
contacts
Prior art date
Application number
IL15911202A
Other languages
English (en)
Original Assignee
Infineon Technologies Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from EP01113178A external-priority patent/EP1263050A1/en
Priority claimed from EP01113179A external-priority patent/EP1263051A1/en
Application filed by Infineon Technologies Ag filed Critical Infineon Technologies Ag
Publication of IL159112A0 publication Critical patent/IL159112A0/xx

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76897—Formation of self-aligned vias or contact plugs, i.e. involving a lithographically uncritical step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Semiconductor Memories (AREA)
  • Non-Volatile Memory (AREA)
IL15911202A 2001-05-30 2002-05-27 Bitline contacts in a memory cell array IL159112A0 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
EP01113178A EP1263050A1 (en) 2001-05-30 2001-05-30 Bitline contacts in a memory cell array
EP01113179A EP1263051A1 (en) 2001-05-30 2001-05-30 Bitline contacts in a memory cell array
PCT/EP2002/005805 WO2002097890A2 (en) 2001-05-30 2002-05-27 Bitline contacts in a memory cell array

Publications (1)

Publication Number Publication Date
IL159112A0 true IL159112A0 (en) 2004-05-12

Family

ID=26076602

Family Applications (1)

Application Number Title Priority Date Filing Date
IL15911202A IL159112A0 (en) 2001-05-30 2002-05-27 Bitline contacts in a memory cell array

Country Status (6)

Country Link
US (1) US7008849B2 (enExample)
EP (1) EP1390981A2 (enExample)
JP (1) JP2004529500A (enExample)
IL (1) IL159112A0 (enExample)
TW (1) TW556326B (enExample)
WO (1) WO2002097890A2 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6794764B1 (en) * 2003-03-05 2004-09-21 Advanced Micro Devices, Inc. Charge-trapping memory arrays resistant to damage from contact hole information
JPWO2007000808A1 (ja) * 2005-06-28 2009-01-22 スパンション エルエルシー 半導体装置およびその製造方法
US7977218B2 (en) * 2006-12-26 2011-07-12 Spansion Llc Thin oxide dummy tiling as charge protection
US11631680B2 (en) 2018-10-18 2023-04-18 Applied Materials, Inc. Methods and apparatus for smoothing dynamic random access memory bit line metal
US10700072B2 (en) 2018-10-18 2020-06-30 Applied Materials, Inc. Cap layer for bit line resistance reduction
US10903112B2 (en) 2018-10-18 2021-01-26 Applied Materials, Inc. Methods and apparatus for smoothing dynamic random access memory bit line metal

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4390971A (en) * 1978-03-20 1983-06-28 Texas Instruments Incorporated Post-metal programmable MOS read only memory
US5168334A (en) * 1987-07-31 1992-12-01 Texas Instruments, Incorporated Non-volatile semiconductor memory
US5308777A (en) * 1993-07-28 1994-05-03 United Microelectronics Corporation Mask ROM process
JPH07307388A (ja) * 1994-02-04 1995-11-21 Advanced Micro Devices Inc トランジスタのアレイおよびその形成方法
US5455535A (en) * 1994-03-03 1995-10-03 National Semiconductor Corporation Rail to rail operational amplifier intermediate stage
US5471416A (en) * 1994-11-14 1995-11-28 National Semiconductor Corporation Method of programming a CMOS read only memory at the second metal layer in a two-metal process
US5815433A (en) * 1994-12-27 1998-09-29 Nkk Corporation Mask ROM device with gate insulation film based in pad oxide film and/or nitride film
GB2298739B (en) * 1995-03-07 1999-02-17 Hyundai Electronics Ind Method of making a mask ROM
US5768192A (en) * 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
JP3420694B2 (ja) * 1996-12-27 2003-06-30 株式会社東芝 スタンダードセル方式の集積回路
DE69636738D1 (de) * 1996-12-27 2007-01-11 St Microelectronics Srl Kontaktstruktur für elektronische EPROM oder flash EPROM Halbleiterschaltungen und ihr Herstellungsverfahren
US5915203A (en) * 1997-06-10 1999-06-22 Vlsi Technology, Inc. Method for producing deep submicron interconnect vias
US5966603A (en) * 1997-06-11 1999-10-12 Saifun Semiconductors Ltd. NROM fabrication method with a periphery portion
US5963465A (en) * 1997-12-12 1999-10-05 Saifun Semiconductors, Ltd. Symmetric segmented memory array architecture
US6133095A (en) * 1999-02-04 2000-10-17 Saifun Semiconductors Ltd. Method for creating diffusion areas for sources and drains without an etch step
KR20010018728A (ko) * 1999-08-21 2001-03-15 김영환 마스크 롬의 제조 방법
US6124192A (en) * 1999-09-27 2000-09-26 Vanguard International Semicondutor Corporation Method for fabricating ultra-small interconnections using simplified patterns and sidewall contact plugs

Also Published As

Publication number Publication date
EP1390981A2 (en) 2004-02-25
JP2004529500A (ja) 2004-09-24
US20040120198A1 (en) 2004-06-24
WO2002097890A2 (en) 2002-12-05
TW556326B (en) 2003-10-01
US7008849B2 (en) 2006-03-07
WO2002097890A3 (en) 2003-10-16

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