TW544364B - Method and apparatus for simulating, and method and apparatus for polishing using the same - Google Patents
Method and apparatus for simulating, and method and apparatus for polishing using the same Download PDFInfo
- Publication number
- TW544364B TW544364B TW091118984A TW91118984A TW544364B TW 544364 B TW544364 B TW 544364B TW 091118984 A TW091118984 A TW 091118984A TW 91118984 A TW91118984 A TW 91118984A TW 544364 B TW544364 B TW 544364B
- Authority
- TW
- Taiwan
- Prior art keywords
- honing
- aforementioned
- honed
- simulation
- distribution
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims description 155
- 238000005498 polishing Methods 0.000 title abstract description 14
- 238000009826 distribution Methods 0.000 claims abstract description 192
- 238000004088 simulation Methods 0.000 claims description 114
- 230000008569 process Effects 0.000 claims description 85
- 238000004519 manufacturing process Methods 0.000 claims description 81
- 238000009966 trimming Methods 0.000 claims description 59
- 230000007246 mechanism Effects 0.000 claims description 48
- 238000011049 filling Methods 0.000 claims description 46
- 238000005259 measurement Methods 0.000 claims description 39
- 239000000758 substrate Substances 0.000 claims description 39
- 239000004065 semiconductor Substances 0.000 claims description 38
- 230000001186 cumulative effect Effects 0.000 claims description 28
- 239000000463 material Substances 0.000 claims description 25
- 230000006870 function Effects 0.000 claims description 19
- 238000000227 grinding Methods 0.000 claims description 13
- 239000003795 chemical substances by application Substances 0.000 claims description 12
- 239000000126 substance Substances 0.000 claims description 11
- 230000033001 locomotion Effects 0.000 claims description 7
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 3
- 238000005299 abrasion Methods 0.000 claims 1
- 238000012883 sequential measurement Methods 0.000 claims 1
- 235000012431 wafers Nutrition 0.000 description 97
- 238000012545 processing Methods 0.000 description 62
- 238000004364 calculation method Methods 0.000 description 52
- 239000002023 wood Substances 0.000 description 18
- 238000006073 displacement reaction Methods 0.000 description 16
- 230000008859 change Effects 0.000 description 9
- 239000010410 layer Substances 0.000 description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 7
- 238000012546 transfer Methods 0.000 description 7
- 230000009471 action Effects 0.000 description 6
- 239000002585 base Substances 0.000 description 6
- 230000003287 optical effect Effects 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000001459 lithography Methods 0.000 description 3
- 241001422033 Thestylus Species 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000011229 interlayer Substances 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 230000003113 alkalizing effect Effects 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229910000420 cerium oxide Inorganic materials 0.000 description 1
- 239000013043 chemical agent Substances 0.000 description 1
- 238000001311 chemical methods and process Methods 0.000 description 1
- 230000003750 conditioning effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000005187 foaming Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000011068 loading method Methods 0.000 description 1
- 239000008267 milk Substances 0.000 description 1
- 210000004080 milk Anatomy 0.000 description 1
- 235000013336 milk Nutrition 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 238000007781 pre-processing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000002904 solvent Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B51/00—Arrangements for automatic control of a series of individual steps in grinding a workpiece
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B57/00—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents
- B24B57/02—Devices for feeding, applying, grading or recovering grinding, polishing or lapping agents for feeding of fluid, sprayed, pulverised, or liquefied grinding, polishing or lapping agents
Landscapes
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Length Measuring Devices With Unspecified Measuring Means (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001251421A JP4876345B2 (ja) | 2001-08-22 | 2001-08-22 | シミュレーション方法及び装置、並びに、これを用いた研磨方法及び装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW544364B true TW544364B (en) | 2003-08-01 |
Family
ID=19080071
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW091118984A TW544364B (en) | 2001-08-22 | 2002-08-22 | Method and apparatus for simulating, and method and apparatus for polishing using the same |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US7108580B2 (ja) |
| JP (1) | JP4876345B2 (ja) |
| KR (1) | KR100590465B1 (ja) |
| TW (1) | TW544364B (ja) |
| WO (1) | WO2003030233A1 (ja) |
Families Citing this family (21)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4266668B2 (ja) * | 2003-02-25 | 2009-05-20 | 株式会社ルネサステクノロジ | シミュレーション装置 |
| DE102005012684A1 (de) * | 2005-03-18 | 2006-09-21 | Infineon Technologies Ag | Verfahren zum Steuern eines CMP-Prozesses und Poliertuch |
| JPWO2006106790A1 (ja) | 2005-04-01 | 2008-09-11 | 株式会社ニコン | 研磨装置、この研磨装置を用いた半導体デバイス製造方法、及びこの半導体デバイス製造方法により製造された半導体デバイス |
| US7636611B2 (en) * | 2005-10-28 | 2009-12-22 | Samsung Austin Semiconductor, L.P. | Fuzzy logic system for process control in chemical mechanical polishing |
| US7930058B2 (en) * | 2006-01-30 | 2011-04-19 | Memc Electronic Materials, Inc. | Nanotopography control and optimization using feedback from warp data |
| US7698952B2 (en) * | 2006-10-03 | 2010-04-20 | Kla-Tencor Corporation | Pressure sensing device |
| US7497134B2 (en) * | 2006-10-03 | 2009-03-03 | Kla-Tencor Corporation | Process condition measuring device and method for measuring shear force on a surface of a substrate that undergoes a polishing or planarization process |
| KR100827698B1 (ko) * | 2006-11-21 | 2008-05-07 | 삼성전자주식회사 | 씨엠피의 공정 수행을 위한 셋업 방법 및 장치 |
| JP5112007B2 (ja) * | 2007-10-31 | 2013-01-09 | 株式会社荏原製作所 | 研磨装置および研磨方法 |
| JP2009140956A (ja) * | 2007-12-03 | 2009-06-25 | Elpida Memory Inc | 形状予測シミュレータ、方法およびプログラム |
| JP5336799B2 (ja) * | 2008-09-24 | 2013-11-06 | 東京エレクトロン株式会社 | 化学的機械研磨装置、化学的機械研磨方法及び制御プログラム |
| US8588956B2 (en) * | 2009-01-29 | 2013-11-19 | Tayyab Ishaq Suratwala | Apparatus and method for deterministic control of surface figure during full aperture polishing |
| KR101013327B1 (ko) * | 2010-10-27 | 2011-02-09 | 정규선 | 화장품 용기 |
| US9193025B2 (en) | 2013-03-13 | 2015-11-24 | Sunedison Semiconductor Limited (Uen201334164H) | Single side polishing using shape matching |
| KR101583817B1 (ko) * | 2014-04-17 | 2016-01-08 | 주식회사 케이씨텍 | 화학 기계적 연마 공정의 보정 제어 장치 및 그 방법 |
| JP6753758B2 (ja) * | 2016-10-18 | 2020-09-09 | 株式会社荏原製作所 | 研磨装置、研磨方法およびプログラム |
| JP6956604B2 (ja) * | 2017-11-13 | 2021-11-02 | キヤノン株式会社 | 基板処理装置および物品製造方法 |
| JP6970601B2 (ja) * | 2017-12-06 | 2021-11-24 | 株式会社荏原製作所 | 半導体製造装置の設計方法 |
| JP7145098B2 (ja) * | 2019-02-21 | 2022-09-30 | 株式会社荏原製作所 | 研磨装置、研磨方法、および研磨液供給位置決定プログラムを記録した記録媒体 |
| JP2021141255A (ja) * | 2020-03-06 | 2021-09-16 | キオクシア株式会社 | 半導体製造装置および半導体装置の製造方法 |
| CN113319656B (zh) * | 2021-06-25 | 2022-09-23 | 泉州华中科技大学智能制造研究院 | 一种异型工件的磨削加工方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH06315849A (ja) * | 1993-03-04 | 1994-11-15 | Nikon Corp | 研磨加工用プログラムの作成方法及び それを用いた作成装置 |
| US5599423A (en) | 1995-06-30 | 1997-02-04 | Applied Materials, Inc. | Apparatus and method for simulating and optimizing a chemical mechanical polishing system |
| JPH10296628A (ja) * | 1997-04-24 | 1998-11-10 | Nikon Corp | 平面研磨面評価装置および方法並びに平面研磨面評価プログラムを記録した記録媒体 |
| JPH11126765A (ja) * | 1997-10-22 | 1999-05-11 | Toshiba Corp | 研磨シミュレーション方法および研磨シミュレーション方法を記録した記録媒体および研磨方法 |
| JPH11186205A (ja) * | 1997-12-24 | 1999-07-09 | Sony Corp | 加工表面高さのシミュレーション方法 |
| JP3731411B2 (ja) * | 1998-11-09 | 2006-01-05 | 株式会社東京精密 | ウェーハ研磨装置 |
| US6238273B1 (en) * | 1999-08-31 | 2001-05-29 | Micron Technology, Inc. | Methods for predicting polishing parameters of polishing pads and methods and machines for planarizing microelectronic substrate assemblies in mechanical or chemical-mechanical planarization |
| JP2001219366A (ja) * | 2000-02-07 | 2001-08-14 | Toshiba Corp | 研磨支援方法及びその装置、研磨方法 |
| AU2001249724A1 (en) * | 2000-04-03 | 2001-10-15 | Speed-Fam-Ipec Corporation | System and method for predicting software models using material-centric process instrumentation |
| JP2002140655A (ja) * | 2000-11-02 | 2002-05-17 | Hitachi Ltd | 半導体ウエハの平坦化シミュレーション |
| JP2002184733A (ja) * | 2000-12-18 | 2002-06-28 | Hitachi Ltd | 処理方法、測定方法及び半導体装置の製造方法 |
| DE10136742A1 (de) * | 2001-07-27 | 2003-02-13 | Infineon Technologies Ag | Verfahren zum Charakterisieren der Planarisierungseigenschaften einer Verbrauchsmittelkombination in einem chemisch-mechanischen Polierprozeß, Simulationsverfahren und Polierverfahren |
| US20030139122A1 (en) * | 2002-01-24 | 2003-07-24 | Lawing Andrew Scott | Polishing pad for a chemical mechanical planarization or polishing (CMP) system |
-
2001
- 2001-08-22 JP JP2001251421A patent/JP4876345B2/ja not_active Expired - Lifetime
-
2002
- 2002-08-19 KR KR1020047002372A patent/KR100590465B1/ko active IP Right Grant
- 2002-08-19 WO PCT/JP2002/008349 patent/WO2003030233A1/ja active Application Filing
- 2002-08-22 TW TW091118984A patent/TW544364B/zh not_active IP Right Cessation
-
2004
- 2004-02-10 US US10/774,623 patent/US7108580B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| WO2003030233A1 (fr) | 2003-04-10 |
| KR100590465B1 (ko) | 2006-06-19 |
| JP4876345B2 (ja) | 2012-02-15 |
| JP2003068688A (ja) | 2003-03-07 |
| US20040248411A1 (en) | 2004-12-09 |
| US7108580B2 (en) | 2006-09-19 |
| KR20040027898A (ko) | 2004-04-01 |
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| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |