TW526601B - Substrate and fabrication method of the same - Google Patents
Substrate and fabrication method of the same Download PDFInfo
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- TW526601B TW526601B TW091101125A TW91101125A TW526601B TW 526601 B TW526601 B TW 526601B TW 091101125 A TW091101125 A TW 091101125A TW 91101125 A TW91101125 A TW 91101125A TW 526601 B TW526601 B TW 526601B
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- 239000000758 substrate Substances 0.000 title claims abstract description 101
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 238000001514 detection method Methods 0.000 claims description 46
- 239000012792 core layer Substances 0.000 claims description 33
- 239000010410 layer Substances 0.000 claims description 32
- 229910000679 solder Inorganic materials 0.000 claims description 21
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 12
- 229910052751 metal Inorganic materials 0.000 claims description 10
- 239000002184 metal Substances 0.000 claims description 10
- 229910052802 copper Inorganic materials 0.000 claims description 8
- 239000010949 copper Substances 0.000 claims description 8
- 238000007747 plating Methods 0.000 claims description 8
- 229920005989 resin Polymers 0.000 claims description 8
- 239000011347 resin Substances 0.000 claims description 8
- 239000004065 semiconductor Substances 0.000 claims description 8
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 238000003466 welding Methods 0.000 claims description 6
- 238000007639 printing Methods 0.000 claims description 5
- 229910001020 Au alloy Inorganic materials 0.000 claims description 4
- 239000011889 copper foil Substances 0.000 claims description 4
- 239000003353 gold alloy Substances 0.000 claims description 4
- MSNOMDLPLDYDME-UHFFFAOYSA-N gold nickel Chemical compound [Ni].[Au] MSNOMDLPLDYDME-UHFFFAOYSA-N 0.000 claims description 4
- 239000000463 material Substances 0.000 claims description 4
- 239000003822 epoxy resin Substances 0.000 claims description 3
- 238000005530 etching Methods 0.000 claims description 3
- 229920000647 polyepoxide Polymers 0.000 claims description 3
- 239000004642 Polyimide Substances 0.000 claims description 2
- 229920001721 polyimide Polymers 0.000 claims description 2
- 239000003365 glass fiber Substances 0.000 claims 2
- JXYWFNAQESKDNC-BTJKTKAUSA-N (z)-4-hydroxy-4-oxobut-2-enoate;2-[(4-methoxyphenyl)methyl-pyridin-2-ylamino]ethyl-dimethylazanium Chemical compound OC(=O)\C=C/C(O)=O.C1=CC(OC)=CC=C1CN(CCN(C)C)C1=CC=CC=N1 JXYWFNAQESKDNC-BTJKTKAUSA-N 0.000 claims 1
- 239000003795 chemical substances by application Substances 0.000 claims 1
- 239000004814 polyurethane Substances 0.000 claims 1
- 229920002635 polyurethane Polymers 0.000 claims 1
- 238000000465 moulding Methods 0.000 abstract description 17
- 230000008569 process Effects 0.000 abstract description 14
- 230000032798 delamination Effects 0.000 abstract description 4
- 239000008393 encapsulating agent Substances 0.000 abstract 4
- 238000004806 packaging method and process Methods 0.000 description 14
- 239000000084 colloidal system Substances 0.000 description 12
- 230000007246 mechanism Effects 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 7
- 238000009713 electroplating Methods 0.000 description 6
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 description 4
- QRJOYPHTNNOAOJ-UHFFFAOYSA-N copper gold Chemical compound [Cu].[Au] QRJOYPHTNNOAOJ-UHFFFAOYSA-N 0.000 description 4
- 239000003292 glue Substances 0.000 description 4
- 238000007789 sealing Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005538 encapsulation Methods 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 238000012858 packaging process Methods 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052763 palladium Inorganic materials 0.000 description 2
- 239000002699 waste material Substances 0.000 description 2
- JYEUMXHLPRZUAT-UHFFFAOYSA-N 1,2,3-triazine Chemical compound C1=CN=NN=C1 JYEUMXHLPRZUAT-UHFFFAOYSA-N 0.000 description 1
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 1
- 101000735459 Homo sapiens Protein mono-ADP-ribosyltransferase PARP9 Proteins 0.000 description 1
- 102100034930 Protein mono-ADP-ribosyltransferase PARP9 Human genes 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 239000002274 desiccant Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011152 fibreglass Substances 0.000 description 1
- 239000004519 grease Substances 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 229920003192 poly(bis maleimide) Polymers 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- -1 that is Chemical compound 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
- H01L21/4814—Conductive parts
- H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
- H01L22/34—Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
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- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/0266—Marks, test patterns or identification means
- H05K1/0269—Marks, test patterns or identification means for visual or optical inspection
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- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/85009—Pre-treatment of the connector or the bonding area
- H01L2224/8501—Cleaning, e.g. oxide removal step, desmearing
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- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
- H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
- H01L23/49816—Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
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- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
- H05K2201/09—Shape and layout
- H05K2201/09209—Shape and layout details of conductors
- H05K2201/09654—Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
- H05K2201/09781—Dummy conductors, i.e. not used for normal transport of current; Dummy electrodes of components
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- H05K3/22—Secondary treatment of printed circuits
- H05K3/24—Reinforcing the conductive pattern
- H05K3/241—Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
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- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3489—Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces
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- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Description
526601 五、發明說明(1) [發明領域] 本發明係有關一種基板及其製法,尤指一種供半導體 晶片承載用之球柵陣列基板及該基板之製法。 [背景技術說明] 一般半導體封裝件如球栅陣列式(Bal i Grid Array, BGA)封裝件之製程,包括進料、基板烘烤(Baking,12〇 C、歷時1小時)、上片、上片烘烤(Cur ing,1 75它、歷時 2小時)及電漿(Plasma)清洗等,使經電漿清洗過之基板得 以進行後續銲線及模壓等作業。基板清洗之目的在於清除 ,^上之污染物質(c〇ntaminant),以無污染之基板製造 γ V體封裝件,得確保封裝產品之品質。然於實際作業 苴,,因人為疏失或其他原因,發生基板漏洗之情況, i I反經電漿清洗而直接進入銲線及模壓等製程中。是 π二=士因殘留有污染物質,使電性連接晶片與基板間之 I苴4、吁接〇口負文到影響,並使形成於基板上之封裝膠體 二f板間易發生脫層現象,致封裝完成之成品的良率鉦法 提升。 … 有鑑於此,美國專利案第6, 0 6 8, 1 2 9號揭露一種顯示 基板與封裝膠體間之黏結狀態(Adhesi〇n Status)之機 =即在基板1上之〉主膠道(Runner )丨〇上形成有一顯示機 構(I=1Cat〇r)ll,如第4圖所示。該顯示機構n係以相同 於覆盍4基板1上其他區域之材質如拒銲劑(s〇lder Mask) 而製成_,因此,該顯示機構丨丨與形成於基板上之封裝膠體 (未圖不)間具有良好之黏結性;而於該顯示機構丨丨外之注
16570.ptd 第6頁 526601 五、發明說明(2) 膠道1 0部分則因鍍有金或鈀 之黏結性較差。於形成封裝 脂殘留於該注膠道1 0上須予 1 0上之夕餘樹脂時,可能發 與该殘留樹脂一起剝離之情 亲J除則表示基板與封裝膠 若部份顯示機構11殘留注膠 體間之黏結狀態不佳,極有 並遥出基板與封裝膠體間結 續之半導體封裝件製程。 、 然而,上述用以檢測基 法’具有諸多缺點。例如, 裝膠體之模壓製程後,未能 偵知基板上殘存有污染物質 板及該封裝膠體内包覆之元 而增加成本,使產品良率降 因此,尋求一得以預先 與封裝膠體間之黏結品質及 質’以降低成本並提昇產品 [發明概述] (Palladium),故與封裝用 膠體後,往往會有多餘封 以去除。剝除殘留於該注 生該顯示機構1 1完全或僅 況。若該顯示機構1 1得以 體間之黏結狀態良好;反 道1 0上,則顯示基板與封 發生脫層現象之虞。以此 合良好之封裝結構,而進 板與封裝膠體間黏結狀態 該檢測方法僅能實施於形 在銲線及/或模壓作業前2 ’故與封裝膠體黏結不佳 件,僅能丟棄,無疑浪費 低。 檢知基板是否清洗,確保 晶片與基板間之電性連接 良率之方法,實為當務之 ^體 裝樹 膠道 部份 完全 之, 裝膠 判斷 行後 之方 成封 L時 之基 資源 基板 品 急。 本發明之一目的在於提供一種具基板清洗檢知點 (Check Point)之基板及其製法,得以於銲線及/或模 業進行前,檢知基板是否清洗,防止未清洗之基板進 壓作 入鮮 響基 線及模壓等製程,且設置於基板表面之檢知點不會影
16570.ptd 第7頁 526601 ---- ---— ________ 五、發明說明(3) 板上之佈局性(R 〇 u t a b i 1 i t y ),並係採用既有設備及技術 製成,不會增加基板成本及製程之複雜性。 為達成上揭及其他目的,本發明揭露一半導體封裝件 用之基板及其製法。該基板係包括:一蕊層(GQ:re Layer),於其至少一表面上形成有一導電跡線佈設區 (T r a c e F 〇 r m i n g A r e a );多數形成於該蕊層之導電跡線佈 設區上之導電跡線(C ο n d u c t i v e T r a c e ),各該導電跡線具 有一第一端部及一相對之第二端部,使該第一端部得與外 界電性連接以電鍍(Plat ing)—金屬層於該第二端部上; 至少一形成於該蕊層之導電跡線佈設區外之檢知點,使該 檢知點與該等導電跡線隔離開而與外界形成非電性連結關 係;以及至少一敷設於該蕊層形成有導電跡線及檢知點之 表面上的拒銲劑層(s 0 1 d e r M a s k L a y e f ),使各該導電跡 線之第二端部及該檢知點均外露出該拒銲劑層。 前揭基板之製法,係包括下列步驟:製備一蕊層,於 其至少一表面上具有一導電跡線佈設區;形成多數導電跡 線於該蕊層之表面之導電跡線佈設區上,並形成至少一檢 知點於該蕊層之表面位於該導電跡線佈設區外之區域上, 其中,各該導電跡線具有一第一端部及一相對之第二端 部,使該等導電跡線得藉第—端部與外界電性連接,而該 檢知點則與該等導電跡線間隔開以與外界形成非電性連結 關係;敷設至少一拒銲劑層於該蕊層形成有導電跡線及檢 知點之表面上;以及使各該導電跡線之第二端部及該檢知 點外露出該拒銲劑層。
16570.Ptd 第 8 頁 526601 五、發明說明(4) 上述基板中,復包 點之表面上形成一電鍍 導電跡線之第一端部藉 電鍍金或鎳金合金之金 點,由於無法與該電鍍 鍍上金屬層。再者,形 乃藉蝕刻一貼合至該蕊 該蕊層之表面上印刷出 本發明之特徵,即 點,於形成銲線及封裝 色判斷基板是否經電漿 銲線及/或模壓等製程 無污染之基板上,而得 現象,並確保銲線銲接 清洗之判斷係於銲線及 中於模壓後才斷定封裝 費資源及增加成本之缺 置於基板表面之檢知點 檢知點於習知基板製程 佈局性,故無增加基板 [圖式簡單說明] 為讓本發明之上述 顯易懂,將與較佳實施 發明之實施例,所附圖 括於該蕊層形成有導電跡線及檢知 匯流排(P 1 a t i n g B u s ),以供該等 該電鍍匯流排與外界電性連接,而 屬層於該等第二端部上;而該檢知 匯流排形成電性連結關係,故無法 成於該基板上之導電跡線及檢知點 層表面上之銅箔,或藉印刷方式於 所欲之檢知點而完成者。 在基板上設置至少一銅製之檢知 膠體之作業前,藉由該檢知點之顏 清洗,僅使清洗過之基板進入後續 故可確保銲線及封裝膠體形成於 以防止封裝膠體與基板間發生脫層 之品質。再者,本發明之基板是否 /模壓作業前進行,故如習知技術 膠體與基板間之接合狀態而導致浪 點,得於本發明中屏除。此外,設 係採用既有設備及技術製成,使該 中一併形成,且不會影響基板上之 成本及製程複雜性之虞。 及其他目的、特徵以及優點能更明 例,並配合所附圖示,詳細說明本 示之内容簡述如下:
16570.ptd 第9頁 526601 五、發明說明(5) 第1 A圖係本發明之基板之上視圖; 第1 B圖係顯示第1 A圖基板沿1 B- 1 B線切開之局部剖視 圖, 第2 A圖至2 D圖係本發明之基板製造過程示意上視圖及 剖視圖; 第3圖係顯示本發明基板上之檢知點於後續銲線及模 壓製程前之顏色變化;以及 第4圖係習知用以顯示基板與封裝膠體間黏結狀態之 顯示機構之上視圖。 [元件符號說明] 1 基 板 10 注 膠 道 11 顯 示 機 構 2 基 板 20 蕊 層 200 表 面 201 導 電 跡 線 佈設區 21 導 電 跡 線 210 第 一 端 部 211 第 二 端 部 22 金 屬 層 23 檢 知 點 24 拒 1旱 劑 層 25 銅 箔 層 26 電 鍍 匯 流 排 [發明之詳細說明] 以下即配合所附之第1 A-1B圖至第2A-2D圖詳細說明本 發明所揭露之半導體封裝件用之基板及其製法,惟該等各 圖倶為簡化之圖示,僅以示意方式顯示與本發明有關之結 構單元,且此些結構單元並非以實際數量或尺寸比例繪 製,實際之基板結構佈局應更加複雜。再者,本發明之實
16570.ptd 第10頁 ^26601 五、發明說明(6) 施 例以適用於球把击 之基板加以說明,麸太^ (Bal1 Grid Array,BGA)封裝件 如第1 A及1 _二_ ^明所揭露之基板非侷限於此。 板。如圖所示,‘二=t為本發明之半導體封裝件用之基 表面2 0 0上形成有Λ_土墓糸包括:一蕊層2 0,於其至少一 層20之導電跡線卜導巴電2=佈設區201 ;多數形成於該蕊 線21具有一第一二二^二1上之導電跡線21,各該導電跡 -端部2 i 0得與外二=:相對之第二:部2 1 1,使該第 山立 · 界电性連接以電鍍一金屬層2 2於該第二 立而"卩^ 1上,至上一形成於該蕊層2 0之導電跡線佈設區2 〇 ! 外之k知點2 3 ’使該檢知點2換該等導電跡線2丨隔離開而 。外界形成非包性連結關係;以及至少一敷設於該蕊層2 0 形成有導電跡線2 1及檢知點2 3之表面2 0 0上的拒銲劑層 2 4 ’使各該導電跡線2 1之第二端部2 1 1及該檢知點2 3均外 露出該拒銲劑層2 4。 前揭該基板2之製法,係包括下列步驟。首先,如第 2 A圖所示,製備一蕊層2 0,於其至少一表面2 0 0上界定一 導電跡線佈設區201。該蕊層20係以玻璃纖維(Fiber Glass)、環氧樹脂(Epoxy Resin)、聚亞酿胺 (Polyimide)、FR4樹脂或 BT(Bismaleimide Triazine)樹 脂等材質製成。 如第2 B圖所示,於至少該蕊層2 0之表面2 0 〇上貼合一 銅箔層(Copper Film)25,採用#刻(Etching)等方式使該 銅箔層25圖案化(Patterning),以形成出多數導電跡線 2 1、至少一檢知點2 3及一電鍵匯流排2 6。除餘刻方式外’
16570.ptd 第11頁 五、發明說明(7) I :错印刷(Prlnting)方式於該蕊層20之表 巧,…“3。此等敍刻、印刷技術皆為習知,於此 了以賢述。 線^ ί ^上跡線^係/成於該蕊層20表面2 0 0之導電跡 相對之第二端部上^電^線21具•一第—端部21〇及〆 匯流排26,使爷蓉道 邊第一端部21 0電性連接至該電鍍 2〇i^n ^ ^ ,、忒松知點23則位於該導電跡線佈設區 而電上鑛匯使^2ς點2換該等導電跡線21間隔' 之形狀及大小,並成電性連結關係、。該檢知點23 為本發明㈣所涵蓋&限制,任何適用之形狀或尺寸皆 如第2C圖所示,敷% 成有導電跡線2u_f ^少一拒銲劑層24於該蕊層20形 拒銲劑層24,以ί = 之表面2 0 0上。而後,触刻該 知竭露出該i;以:線21之第二端部211及該檢 如第2 D圖所示,、& — 線21第二端部2U。兮進鑛作業、,以電鍍該等導電跡 . 曰 μ專弟一端部2 1 1為供後續銲線(未圖 ^曰’或供後續銲球(未圖示)植接用之銲球 、a為強化ί干私或銲球墊分別與銲線或銲球間之銲結性, 通常以金或鎳金合金電鍍形成一金屬層22於各該第二端部 1上t鍍作業之進行,係由於該等導電跡線2工之第一 =f 2 1 0電性連接至該電鍍匯流排2 6,使該等導電跡線2 i 稭A電鍍匯"“非2 6而與外接之電鍍裝置(未圖示)成電性連
16570.ptd 第12頁 526601 五、發明說明(8) 接關係,以進行電鍍。此電鍍作業係為習知技術,於此不 予以贅述。由於該檢知點2 3位於該導電跡線佈設區2 0 1外 之區域上而與該等導電跡線2 1間隔開,無法與該電鍍匯流 排2 6形成電性連結關係,故無法鍍上金屬層2 2,因此,該 檢知點2 3得保有銅之原色,即銅金色。由於其他後續基板 製程為習知,故於此不予以贅述。 綜上所述,設置於基板表面之檢知點係採用既有設備 及技術製成,使該檢知點於習知基板製程中一併形成,且 不會影響基板上之佈局性,故無增加基板成本及製程複雜 性之虞。 第3圖係顯示本發明基板2上之檢知點2 3於後續銲線及 模壓製程前之顏色變化。如圖所示,上述具有至少一檢知 點2 3之基板2,於後續封裝件製程中,得由該銅製檢知點 2 3之顏色變化判斷該基板2是否已經電漿清洗。一般封裝 件製程,包括進料、基板烘烤(1 2 0°C、歷時1小時)、上 片、上片烘烤(1 7 5°C、歷時2小時)及電漿清洗等,使經電 漿清洗過之基板得以進行後續銲線及封膠模壓等作業。此 等製程為習知,於此不予以贅述。其中,該銅製檢知點2 3 自進料至上片烘烤過程中,由於高溫氧化作用,使該檢知 點2 3由原來之銅金色(即銅之原色)變為暗褐色,而於電漿 清洗過後,該檢知點2 3之氧化層得以去除,使該檢知點2 3 復原為銅金色。因此,具有恢復為銅金色檢知點2 3之基板 2即表示已經電漿清洗過之基板2,得以用於後續銲線及模 壓等製程;換言之,若基板2之檢知點2 3呈現非銅金色或
16570.ptd 第13頁 526601 五、發明說明(9) 較深暗之色澤,即表示該基板2尚未經電漿清洗,故此基 板2需予以清洗後再用於後續封裝件製程。此即為本發明 之特徵所在,於銲線及/或模壓作業進行前,得以由基板 上檢知點之顏色判斷基板是否經電漿清洗,僅使清洗過之 基板進入後續銲線及/或模壓等製程,使銲線及封裝膠體 形成於無污染之基板上,而得以防止封裝膠體與基板間發 生脫層現象,並確保銲線銲接之完整性及品質,提昇產品 良率。再者,由於本發明之基板是否清洗之判斷得以及時 於銲線及/或模壓作業前進行,故如習知技術中於模壓後 才能斷定封裝膠體與基板間之接合狀態而導致浪費資源及 增加成本之缺點,得於本發明中屏除。 惟以上所述者,僅係用以說明本發明之具體實施例而 已,並非用以限定本發明之可實施範圍,舉凡熟習該項技 藝者在未脫離本發明所指示之精神與原理下所完成之一切 等效改變或修飾,仍應皆由後述之專利範圍所涵蓋。
16570.ptd 第14頁
Claims (1)
- 526601 六、申請專利範圍 1. 一種半導體封裝件用之基板,係包括: 一蕊層,於其至少一表面上形成有一導電跡線佈 設區, 多數形成於該蕊層之導電跡線佈設區上之導電跡 線,各該導電跡線具有一第一端部及一相對之第二端 部,使該第一端部得與外界電性連接以電鍍一金屬層 於該第二端部上; 至少一形成於該蕊層之導電跡線佈設區外之檢知 點’使該檢知點與該等導電跡線隔離開而與外界形成 非電性連結關係;以及 至少一敷設於該蕊層形成有導電跡線及檢知點之 表面上的拒銲劑層,使各該導電跡線之第二端部及該 檢知點均外露出該拒銲劑層。 2. 如申請專利範圍第1項之基板,其中,該蕊層係以一選 自由玻璃纖維、環氧樹脂、聚亞醯胺、FR4樹脂及BT樹 脂組成之組群之材質製成者。 3. 如申請專利範圍第1項之基板,其中,該檢知點及該等 導電跡線係以銅製成者。 4. 如申請專利範圍第1項之基板,其中,該第二端部係供 銲線銲接用之銲指。 5. 如申請專利範圍第1項之基板,其中,該第二端部係供 銲球植接用之銲球墊。 6. 如申請專利範圍第1項之基板,其中,該金屬層係選自 由金及鎳金合金所組成之組群者。16570.ptd 第15頁 526601 六、申請專利範圍 7. 如申請專利範圍第1項之基板,復包括一設於該蕊層形 成有導電跡線及檢知點之表面上的電鑛匯流排,以供 該等導電跡線之第一端部藉之與外界電性連接。 8. —種半導體封裝件用之基板之製法,係包括下列步驟 製備一蕊層,於其至少一表面上具有一導電跡線 佈設區, 形成多數導電跡線於該蕊層之表面之導電跡線佈 設區上,並形成至少一檢知點於該蕊層之表面位於該 導電跡線佈設區外之區域上’其中’該等導電跡線得 與外界電性連接,而該檢知點則與該等導電跡線間隔 開以與外界形成非電性連結關係; 敷設至少一拒銲劑層於該蕊層形成有導電跡線及 檢知點之表面上;以及 使各該導電跡線之一部份及該檢知點外露出該拒 鮮劑層。 9. 如申請專利範圍第8項之製法,其中,該蕊層係以一選 自由玻璃纖維、環氧樹脂、聚亞St胺、F R 4樹脂及B T樹 脂組成之組群之材質製成者。 1 0 .如申請專利範圍第8項之製法,其中,該檢知點及該等 導電跡線係以銅製成者。 1 1 .如申請專利範圍第8項之製法,其中,各該導電跡線具 有一第一端部及一相對之第二端部,使該導電跡線藉 該第一端部與外界電性連接以電鍍一金屬層於該第二16570.ptd 第16頁 526601 六、申請專利範圍 端部上,且該第二端部為該導電跡線外露出拒銲劑層 之部份者。 1 2 .如申請專利範圍第1 1項之製法,其中,該第二端部係 供銲線鋅接用之銲指。 1 3 .如申請專利範圍第1 1項之製法,其中,該第二端部係 供銲球植接用之銲球墊。 1 4.如申請專利範圍第1 1項之製法,其中,該金屬層係選 自由金及鎳金合金所組成之組群者。 1 5.如申請專利範圍第8項之製法,復包括一在該蕊層形成 有導電跡線及檢知點之表面上形成一電鍍匯流排之步 驟,以供該等導電跡線藉該電鍍匯流排與外界電性連 接。 1 6 .如申請專利範圍第8項之製法,其中,該形成導電跡線 及檢知點於基板上之步驟乃藉蝕刻一貼合至該蕊層之 一表面上之銅箔而完成者。 1 7 .如申請專利範圍第8項之製法,其中,該形成檢知點於 基板上之步驟乃藉印刷方式於該蕊層之一表面上印刷 出所欲之檢知點而完成者。16570.ptd 第17頁
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TW091101125A TW526601B (en) | 2002-01-24 | 2002-01-24 | Substrate and fabrication method of the same |
US10/116,204 US6943439B2 (en) | 2002-01-24 | 2002-04-04 | Substrate and fabrication method of the same |
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111627797A (zh) * | 2020-06-08 | 2020-09-04 | 中国电子科技集团公司第二十四研究所 | 一种提高半导体芯片键合可靠性的处理方法 |
TWI848353B (zh) * | 2021-09-02 | 2024-07-11 | 美商愛玻索立克公司 | 基板載體以及包括其之基板組合 |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
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TWI266574B (en) * | 2004-09-13 | 2006-11-11 | Advanced Semiconductor Eng | Circuit substrate |
JP2007294640A (ja) * | 2006-04-25 | 2007-11-08 | Orion Denki Kk | 層構成表示部を備えた多層基板 |
TWI305127B (en) * | 2006-10-13 | 2009-01-01 | Phoenix Prec Technology Corp | Circuit board structure capable of performing electrica tests and fabrication method thereof |
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US5512712A (en) * | 1993-10-14 | 1996-04-30 | Ibiden Co., Ltd. | Printed wiring board having indications thereon covered by insulation |
US6355576B1 (en) * | 1999-04-26 | 2002-03-12 | Vlsi Technology Inc. | Method for cleaning integrated circuit bonding pads |
JP3314304B2 (ja) * | 1999-06-07 | 2002-08-12 | アムコー テクノロジー コリア インコーポレーティド | 半導体パッケージ用の回路基板 |
US6580132B1 (en) * | 2002-04-10 | 2003-06-17 | International Business Machines Corporation | Damascene double-gate FET |
-
2002
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Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN111627797A (zh) * | 2020-06-08 | 2020-09-04 | 中国电子科技集团公司第二十四研究所 | 一种提高半导体芯片键合可靠性的处理方法 |
TWI848353B (zh) * | 2021-09-02 | 2024-07-11 | 美商愛玻索立克公司 | 基板載體以及包括其之基板組合 |
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