TW526601B - Substrate and fabrication method of the same - Google Patents

Substrate and fabrication method of the same Download PDF

Info

Publication number
TW526601B
TW526601B TW091101125A TW91101125A TW526601B TW 526601 B TW526601 B TW 526601B TW 091101125 A TW091101125 A TW 091101125A TW 91101125 A TW91101125 A TW 91101125A TW 526601 B TW526601 B TW 526601B
Authority
TW
Taiwan
Prior art keywords
substrate
scope
end portion
core layer
patent application
Prior art date
Application number
TW091101125A
Other languages
English (en)
Inventor
Chien-Ping Huang
Han-Ping Pu
Chih-Chin Liao
Original Assignee
Siliconware Precision Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siliconware Precision Industries Co Ltd filed Critical Siliconware Precision Industries Co Ltd
Priority to TW091101125A priority Critical patent/TW526601B/zh
Priority to US10/116,204 priority patent/US6943439B2/en
Application granted granted Critical
Publication of TW526601B publication Critical patent/TW526601B/zh

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326
    • H01L21/4814Conductive parts
    • H01L21/4846Leads on or in insulating or insulated substrates, e.g. metallisation
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L22/00Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
    • H01L22/30Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
    • H01L22/34Circuits for electrically characterising or monitoring manufacturing processes, e. g. whole test die, wafers filled with test structures, on-board-devices incorporated on each die, process control monitors or pad structures thereof, devices in scribe line
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00Printed circuits
    • H05K1/02Details
    • H05K1/0266Marks, test patterns or identification means
    • H05K1/0269Marks, test patterns or identification means for visual or optical inspection
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85009Pre-treatment of the connector or the bonding area
    • H01L2224/8501Cleaning, e.g. oxide removal step, desmearing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H01L23/49816Spherical bumps on the substrate for external connection, e.g. ball grid arrays [BGA]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/00014Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01005Boron [B]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01006Carbon [C]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01028Nickel [Ni]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01029Copper [Cu]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01033Arsenic [As]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01046Palladium [Pd]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01078Platinum [Pt]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01Chemical elements
    • H01L2924/01079Gold [Au]
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/014Solder alloys
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09Shape and layout
    • H05K2201/09209Shape and layout details of conductors
    • H05K2201/09654Shape and layout details of conductors covering at least two types of conductors provided for in H05K2201/09218 - H05K2201/095
    • H05K2201/09781Dummy conductors, i.e. not used for normal transport of current; Dummy electrodes of components
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/24Reinforcing the conductive pattern
    • H05K3/241Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus
    • H05K3/242Reinforcing the conductive pattern characterised by the electroplating method; means therefor, e.g. baths or apparatus characterised by using temporary conductors on the printed circuit for electrically connecting areas which are to be electroplated
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/22Secondary treatment of printed circuits
    • H05K3/28Applying non-metallic protective coatings
    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05KPRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00Apparatus or processes for manufacturing printed circuits
    • H05K3/30Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3489Composition of fluxes; Methods of application thereof; Other methods of activating the contact surfaces

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Automation & Control Theory (AREA)
  • Structure Of Printed Boards (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Description

526601 五、發明說明(1) [發明領域] 本發明係有關一種基板及其製法,尤指一種供半導體 晶片承載用之球柵陣列基板及該基板之製法。 [背景技術說明] 一般半導體封裝件如球栅陣列式(Bal i Grid Array, BGA)封裝件之製程,包括進料、基板烘烤(Baking,12〇 C、歷時1小時)、上片、上片烘烤(Cur ing,1 75它、歷時 2小時)及電漿(Plasma)清洗等,使經電漿清洗過之基板得 以進行後續銲線及模壓等作業。基板清洗之目的在於清除 ,^上之污染物質(c〇ntaminant),以無污染之基板製造 γ V體封裝件,得確保封裝產品之品質。然於實際作業 苴,,因人為疏失或其他原因,發生基板漏洗之情況, i I反經電漿清洗而直接進入銲線及模壓等製程中。是 π二=士因殘留有污染物質,使電性連接晶片與基板間之 I苴4、吁接〇口負文到影響,並使形成於基板上之封裝膠體 二f板間易發生脫層現象,致封裝完成之成品的良率鉦法 提升。 … 有鑑於此,美國專利案第6, 0 6 8, 1 2 9號揭露一種顯示 基板與封裝膠體間之黏結狀態(Adhesi〇n Status)之機 =即在基板1上之〉主膠道(Runner )丨〇上形成有一顯示機 構(I=1Cat〇r)ll,如第4圖所示。該顯示機構n係以相同 於覆盍4基板1上其他區域之材質如拒銲劑(s〇lder Mask) 而製成_,因此,該顯示機構丨丨與形成於基板上之封裝膠體 (未圖不)間具有良好之黏結性;而於該顯示機構丨丨外之注
16570.ptd 第6頁 526601 五、發明說明(2) 膠道1 0部分則因鍍有金或鈀 之黏結性較差。於形成封裝 脂殘留於該注膠道1 0上須予 1 0上之夕餘樹脂時,可能發 與该殘留樹脂一起剝離之情 亲J除則表示基板與封裝膠 若部份顯示機構11殘留注膠 體間之黏結狀態不佳,極有 並遥出基板與封裝膠體間結 續之半導體封裝件製程。 、 然而,上述用以檢測基 法’具有諸多缺點。例如, 裝膠體之模壓製程後,未能 偵知基板上殘存有污染物質 板及該封裝膠體内包覆之元 而增加成本,使產品良率降 因此,尋求一得以預先 與封裝膠體間之黏結品質及 質’以降低成本並提昇產品 [發明概述] (Palladium),故與封裝用 膠體後,往往會有多餘封 以去除。剝除殘留於該注 生該顯示機構1 1完全或僅 況。若該顯示機構1 1得以 體間之黏結狀態良好;反 道1 0上,則顯示基板與封 發生脫層現象之虞。以此 合良好之封裝結構,而進 板與封裝膠體間黏結狀態 該檢測方法僅能實施於形 在銲線及/或模壓作業前2 ’故與封裝膠體黏結不佳 件,僅能丟棄,無疑浪費 低。 檢知基板是否清洗,確保 晶片與基板間之電性連接 良率之方法,實為當務之 ^體 裝樹 膠道 部份 完全 之, 裝膠 判斷 行後 之方 成封 L時 之基 資源 基板 品 急。 本發明之一目的在於提供一種具基板清洗檢知點 (Check Point)之基板及其製法,得以於銲線及/或模 業進行前,檢知基板是否清洗,防止未清洗之基板進 壓作 入鮮 響基 線及模壓等製程,且設置於基板表面之檢知點不會影
16570.ptd 第7頁 526601 ---- ---— ________ 五、發明說明(3) 板上之佈局性(R 〇 u t a b i 1 i t y ),並係採用既有設備及技術 製成,不會增加基板成本及製程之複雜性。 為達成上揭及其他目的,本發明揭露一半導體封裝件 用之基板及其製法。該基板係包括:一蕊層(GQ:re Layer),於其至少一表面上形成有一導電跡線佈設區 (T r a c e F 〇 r m i n g A r e a );多數形成於該蕊層之導電跡線佈 設區上之導電跡線(C ο n d u c t i v e T r a c e ),各該導電跡線具 有一第一端部及一相對之第二端部,使該第一端部得與外 界電性連接以電鍍(Plat ing)—金屬層於該第二端部上; 至少一形成於該蕊層之導電跡線佈設區外之檢知點,使該 檢知點與該等導電跡線隔離開而與外界形成非電性連結關 係;以及至少一敷設於該蕊層形成有導電跡線及檢知點之 表面上的拒銲劑層(s 0 1 d e r M a s k L a y e f ),使各該導電跡 線之第二端部及該檢知點均外露出該拒銲劑層。 前揭基板之製法,係包括下列步驟:製備一蕊層,於 其至少一表面上具有一導電跡線佈設區;形成多數導電跡 線於該蕊層之表面之導電跡線佈設區上,並形成至少一檢 知點於該蕊層之表面位於該導電跡線佈設區外之區域上, 其中,各該導電跡線具有一第一端部及一相對之第二端 部,使該等導電跡線得藉第—端部與外界電性連接,而該 檢知點則與該等導電跡線間隔開以與外界形成非電性連結 關係;敷設至少一拒銲劑層於該蕊層形成有導電跡線及檢 知點之表面上;以及使各該導電跡線之第二端部及該檢知 點外露出該拒銲劑層。
16570.Ptd 第 8 頁 526601 五、發明說明(4) 上述基板中,復包 點之表面上形成一電鍍 導電跡線之第一端部藉 電鍍金或鎳金合金之金 點,由於無法與該電鍍 鍍上金屬層。再者,形 乃藉蝕刻一貼合至該蕊 該蕊層之表面上印刷出 本發明之特徵,即 點,於形成銲線及封裝 色判斷基板是否經電漿 銲線及/或模壓等製程 無污染之基板上,而得 現象,並確保銲線銲接 清洗之判斷係於銲線及 中於模壓後才斷定封裝 費資源及增加成本之缺 置於基板表面之檢知點 檢知點於習知基板製程 佈局性,故無增加基板 [圖式簡單說明] 為讓本發明之上述 顯易懂,將與較佳實施 發明之實施例,所附圖 括於該蕊層形成有導電跡線及檢知 匯流排(P 1 a t i n g B u s ),以供該等 該電鍍匯流排與外界電性連接,而 屬層於該等第二端部上;而該檢知 匯流排形成電性連結關係,故無法 成於該基板上之導電跡線及檢知點 層表面上之銅箔,或藉印刷方式於 所欲之檢知點而完成者。 在基板上設置至少一銅製之檢知 膠體之作業前,藉由該檢知點之顏 清洗,僅使清洗過之基板進入後續 故可確保銲線及封裝膠體形成於 以防止封裝膠體與基板間發生脫層 之品質。再者,本發明之基板是否 /模壓作業前進行,故如習知技術 膠體與基板間之接合狀態而導致浪 點,得於本發明中屏除。此外,設 係採用既有設備及技術製成,使該 中一併形成,且不會影響基板上之 成本及製程複雜性之虞。 及其他目的、特徵以及優點能更明 例,並配合所附圖示,詳細說明本 示之内容簡述如下:
16570.ptd 第9頁 526601 五、發明說明(5) 第1 A圖係本發明之基板之上視圖; 第1 B圖係顯示第1 A圖基板沿1 B- 1 B線切開之局部剖視 圖, 第2 A圖至2 D圖係本發明之基板製造過程示意上視圖及 剖視圖; 第3圖係顯示本發明基板上之檢知點於後續銲線及模 壓製程前之顏色變化;以及 第4圖係習知用以顯示基板與封裝膠體間黏結狀態之 顯示機構之上視圖。 [元件符號說明] 1 基 板 10 注 膠 道 11 顯 示 機 構 2 基 板 20 蕊 層 200 表 面 201 導 電 跡 線 佈設區 21 導 電 跡 線 210 第 一 端 部 211 第 二 端 部 22 金 屬 層 23 檢 知 點 24 拒 1旱 劑 層 25 銅 箔 層 26 電 鍍 匯 流 排 [發明之詳細說明] 以下即配合所附之第1 A-1B圖至第2A-2D圖詳細說明本 發明所揭露之半導體封裝件用之基板及其製法,惟該等各 圖倶為簡化之圖示,僅以示意方式顯示與本發明有關之結 構單元,且此些結構單元並非以實際數量或尺寸比例繪 製,實際之基板結構佈局應更加複雜。再者,本發明之實
16570.ptd 第10頁 ^26601 五、發明說明(6) 施 例以適用於球把击 之基板加以說明,麸太^ (Bal1 Grid Array,BGA)封裝件 如第1 A及1 _二_ ^明所揭露之基板非侷限於此。 板。如圖所示,‘二=t為本發明之半導體封裝件用之基 表面2 0 0上形成有Λ_土墓糸包括:一蕊層2 0,於其至少一 層20之導電跡線卜導巴電2=佈設區201 ;多數形成於該蕊 線21具有一第一二二^二1上之導電跡線21,各該導電跡 -端部2 i 0得與外二=:相對之第二:部2 1 1,使該第 山立 · 界电性連接以電鍍一金屬層2 2於該第二 立而"卩^ 1上,至上一形成於該蕊層2 0之導電跡線佈設區2 〇 ! 外之k知點2 3 ’使該檢知點2換該等導電跡線2丨隔離開而 。外界形成非包性連結關係;以及至少一敷設於該蕊層2 0 形成有導電跡線2 1及檢知點2 3之表面2 0 0上的拒銲劑層 2 4 ’使各該導電跡線2 1之第二端部2 1 1及該檢知點2 3均外 露出該拒銲劑層2 4。 前揭該基板2之製法,係包括下列步驟。首先,如第 2 A圖所示,製備一蕊層2 0,於其至少一表面2 0 0上界定一 導電跡線佈設區201。該蕊層20係以玻璃纖維(Fiber Glass)、環氧樹脂(Epoxy Resin)、聚亞酿胺 (Polyimide)、FR4樹脂或 BT(Bismaleimide Triazine)樹 脂等材質製成。 如第2 B圖所示,於至少該蕊層2 0之表面2 0 〇上貼合一 銅箔層(Copper Film)25,採用#刻(Etching)等方式使該 銅箔層25圖案化(Patterning),以形成出多數導電跡線 2 1、至少一檢知點2 3及一電鍵匯流排2 6。除餘刻方式外’
16570.ptd 第11頁 五、發明說明(7) I :错印刷(Prlnting)方式於該蕊層20之表 巧,…“3。此等敍刻、印刷技術皆為習知,於此 了以賢述。 線^ ί ^上跡線^係/成於該蕊層20表面2 0 0之導電跡 相對之第二端部上^電^線21具•一第—端部21〇及〆 匯流排26,使爷蓉道 邊第一端部21 0電性連接至該電鍍 2〇i^n ^ ^ ,、忒松知點23則位於該導電跡線佈設區 而電上鑛匯使^2ς點2換該等導電跡線21間隔' 之形狀及大小,並成電性連結關係、。該檢知點23 為本發明㈣所涵蓋&限制,任何適用之形狀或尺寸皆 如第2C圖所示,敷% 成有導電跡線2u_f ^少一拒銲劑層24於該蕊層20形 拒銲劑層24,以ί = 之表面2 0 0上。而後,触刻該 知竭露出該i;以:線21之第二端部211及該檢 如第2 D圖所示,、& — 線21第二端部2U。兮進鑛作業、,以電鍍該等導電跡 . 曰 μ專弟一端部2 1 1為供後續銲線(未圖 ^曰’或供後續銲球(未圖示)植接用之銲球 、a為強化ί干私或銲球墊分別與銲線或銲球間之銲結性, 通常以金或鎳金合金電鍍形成一金屬層22於各該第二端部 1上t鍍作業之進行,係由於該等導電跡線2工之第一 =f 2 1 0電性連接至該電鍍匯流排2 6,使該等導電跡線2 i 稭A電鍍匯"“非2 6而與外接之電鍍裝置(未圖示)成電性連
16570.ptd 第12頁 526601 五、發明說明(8) 接關係,以進行電鍍。此電鍍作業係為習知技術,於此不 予以贅述。由於該檢知點2 3位於該導電跡線佈設區2 0 1外 之區域上而與該等導電跡線2 1間隔開,無法與該電鍍匯流 排2 6形成電性連結關係,故無法鍍上金屬層2 2,因此,該 檢知點2 3得保有銅之原色,即銅金色。由於其他後續基板 製程為習知,故於此不予以贅述。 綜上所述,設置於基板表面之檢知點係採用既有設備 及技術製成,使該檢知點於習知基板製程中一併形成,且 不會影響基板上之佈局性,故無增加基板成本及製程複雜 性之虞。 第3圖係顯示本發明基板2上之檢知點2 3於後續銲線及 模壓製程前之顏色變化。如圖所示,上述具有至少一檢知 點2 3之基板2,於後續封裝件製程中,得由該銅製檢知點 2 3之顏色變化判斷該基板2是否已經電漿清洗。一般封裝 件製程,包括進料、基板烘烤(1 2 0°C、歷時1小時)、上 片、上片烘烤(1 7 5°C、歷時2小時)及電漿清洗等,使經電 漿清洗過之基板得以進行後續銲線及封膠模壓等作業。此 等製程為習知,於此不予以贅述。其中,該銅製檢知點2 3 自進料至上片烘烤過程中,由於高溫氧化作用,使該檢知 點2 3由原來之銅金色(即銅之原色)變為暗褐色,而於電漿 清洗過後,該檢知點2 3之氧化層得以去除,使該檢知點2 3 復原為銅金色。因此,具有恢復為銅金色檢知點2 3之基板 2即表示已經電漿清洗過之基板2,得以用於後續銲線及模 壓等製程;換言之,若基板2之檢知點2 3呈現非銅金色或
16570.ptd 第13頁 526601 五、發明說明(9) 較深暗之色澤,即表示該基板2尚未經電漿清洗,故此基 板2需予以清洗後再用於後續封裝件製程。此即為本發明 之特徵所在,於銲線及/或模壓作業進行前,得以由基板 上檢知點之顏色判斷基板是否經電漿清洗,僅使清洗過之 基板進入後續銲線及/或模壓等製程,使銲線及封裝膠體 形成於無污染之基板上,而得以防止封裝膠體與基板間發 生脫層現象,並確保銲線銲接之完整性及品質,提昇產品 良率。再者,由於本發明之基板是否清洗之判斷得以及時 於銲線及/或模壓作業前進行,故如習知技術中於模壓後 才能斷定封裝膠體與基板間之接合狀態而導致浪費資源及 增加成本之缺點,得於本發明中屏除。 惟以上所述者,僅係用以說明本發明之具體實施例而 已,並非用以限定本發明之可實施範圍,舉凡熟習該項技 藝者在未脫離本發明所指示之精神與原理下所完成之一切 等效改變或修飾,仍應皆由後述之專利範圍所涵蓋。
16570.ptd 第14頁

Claims (1)

  1. 526601 六、申請專利範圍 1. 一種半導體封裝件用之基板,係包括: 一蕊層,於其至少一表面上形成有一導電跡線佈 設區, 多數形成於該蕊層之導電跡線佈設區上之導電跡 線,各該導電跡線具有一第一端部及一相對之第二端 部,使該第一端部得與外界電性連接以電鍍一金屬層 於該第二端部上; 至少一形成於該蕊層之導電跡線佈設區外之檢知 點’使該檢知點與該等導電跡線隔離開而與外界形成 非電性連結關係;以及 至少一敷設於該蕊層形成有導電跡線及檢知點之 表面上的拒銲劑層,使各該導電跡線之第二端部及該 檢知點均外露出該拒銲劑層。 2. 如申請專利範圍第1項之基板,其中,該蕊層係以一選 自由玻璃纖維、環氧樹脂、聚亞醯胺、FR4樹脂及BT樹 脂組成之組群之材質製成者。 3. 如申請專利範圍第1項之基板,其中,該檢知點及該等 導電跡線係以銅製成者。 4. 如申請專利範圍第1項之基板,其中,該第二端部係供 銲線銲接用之銲指。 5. 如申請專利範圍第1項之基板,其中,該第二端部係供 銲球植接用之銲球墊。 6. 如申請專利範圍第1項之基板,其中,該金屬層係選自 由金及鎳金合金所組成之組群者。
    16570.ptd 第15頁 526601 六、申請專利範圍 7. 如申請專利範圍第1項之基板,復包括一設於該蕊層形 成有導電跡線及檢知點之表面上的電鑛匯流排,以供 該等導電跡線之第一端部藉之與外界電性連接。 8. —種半導體封裝件用之基板之製法,係包括下列步驟 製備一蕊層,於其至少一表面上具有一導電跡線 佈設區, 形成多數導電跡線於該蕊層之表面之導電跡線佈 設區上,並形成至少一檢知點於該蕊層之表面位於該 導電跡線佈設區外之區域上’其中’該等導電跡線得 與外界電性連接,而該檢知點則與該等導電跡線間隔 開以與外界形成非電性連結關係; 敷設至少一拒銲劑層於該蕊層形成有導電跡線及 檢知點之表面上;以及 使各該導電跡線之一部份及該檢知點外露出該拒 鮮劑層。 9. 如申請專利範圍第8項之製法,其中,該蕊層係以一選 自由玻璃纖維、環氧樹脂、聚亞St胺、F R 4樹脂及B T樹 脂組成之組群之材質製成者。 1 0 .如申請專利範圍第8項之製法,其中,該檢知點及該等 導電跡線係以銅製成者。 1 1 .如申請專利範圍第8項之製法,其中,各該導電跡線具 有一第一端部及一相對之第二端部,使該導電跡線藉 該第一端部與外界電性連接以電鍍一金屬層於該第二
    16570.ptd 第16頁 526601 六、申請專利範圍 端部上,且該第二端部為該導電跡線外露出拒銲劑層 之部份者。 1 2 .如申請專利範圍第1 1項之製法,其中,該第二端部係 供銲線鋅接用之銲指。 1 3 .如申請專利範圍第1 1項之製法,其中,該第二端部係 供銲球植接用之銲球墊。 1 4.如申請專利範圍第1 1項之製法,其中,該金屬層係選 自由金及鎳金合金所組成之組群者。 1 5.如申請專利範圍第8項之製法,復包括一在該蕊層形成 有導電跡線及檢知點之表面上形成一電鍍匯流排之步 驟,以供該等導電跡線藉該電鍍匯流排與外界電性連 接。 1 6 .如申請專利範圍第8項之製法,其中,該形成導電跡線 及檢知點於基板上之步驟乃藉蝕刻一貼合至該蕊層之 一表面上之銅箔而完成者。 1 7 .如申請專利範圍第8項之製法,其中,該形成檢知點於 基板上之步驟乃藉印刷方式於該蕊層之一表面上印刷 出所欲之檢知點而完成者。
    16570.ptd 第17頁
TW091101125A 2002-01-24 2002-01-24 Substrate and fabrication method of the same TW526601B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW091101125A TW526601B (en) 2002-01-24 2002-01-24 Substrate and fabrication method of the same
US10/116,204 US6943439B2 (en) 2002-01-24 2002-04-04 Substrate and fabrication method of the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW091101125A TW526601B (en) 2002-01-24 2002-01-24 Substrate and fabrication method of the same

Publications (1)

Publication Number Publication Date
TW526601B true TW526601B (en) 2003-04-01

Family

ID=21688258

Family Applications (1)

Application Number Title Priority Date Filing Date
TW091101125A TW526601B (en) 2002-01-24 2002-01-24 Substrate and fabrication method of the same

Country Status (2)

Country Link
US (1) US6943439B2 (zh)
TW (1) TW526601B (zh)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111627797A (zh) * 2020-06-08 2020-09-04 中国电子科技集团公司第二十四研究所 一种提高半导体芯片键合可靠性的处理方法
TWI848353B (zh) * 2021-09-02 2024-07-11 美商愛玻索立克公司 基板載體以及包括其之基板組合

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI266574B (en) * 2004-09-13 2006-11-11 Advanced Semiconductor Eng Circuit substrate
JP2007294640A (ja) * 2006-04-25 2007-11-08 Orion Denki Kk 層構成表示部を備えた多層基板
TWI305127B (en) * 2006-10-13 2009-01-01 Phoenix Prec Technology Corp Circuit board structure capable of performing electrica tests and fabrication method thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5512712A (en) * 1993-10-14 1996-04-30 Ibiden Co., Ltd. Printed wiring board having indications thereon covered by insulation
US6355576B1 (en) * 1999-04-26 2002-03-12 Vlsi Technology Inc. Method for cleaning integrated circuit bonding pads
JP3314304B2 (ja) * 1999-06-07 2002-08-12 アムコー テクノロジー コリア インコーポレーティド 半導体パッケージ用の回路基板
US6580132B1 (en) * 2002-04-10 2003-06-17 International Business Machines Corporation Damascene double-gate FET

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111627797A (zh) * 2020-06-08 2020-09-04 中国电子科技集团公司第二十四研究所 一种提高半导体芯片键合可靠性的处理方法
TWI848353B (zh) * 2021-09-02 2024-07-11 美商愛玻索立克公司 基板載體以及包括其之基板組合

Also Published As

Publication number Publication date
US20030137035A1 (en) 2003-07-24
US6943439B2 (en) 2005-09-13

Similar Documents

Publication Publication Date Title
KR100551641B1 (ko) 반도체 장치의 제조 방법 및 반도체 장치
JP3310617B2 (ja) 樹脂封止型半導体装置及びその製造方法
JP3155741B2 (ja) Cspのbga構造を備えた半導体パッケージ
KR20140113964A (ko) 자기 센서 및 자기 센서 장치, 자기 센서의 제조 방법
JPH08115964A (ja) ボール・グリッド・アレイ半導体パッケージのワイヤボンディング検査方法
JP2010283303A (ja) 半導体装置及びその製造方法
TW526601B (en) Substrate and fabrication method of the same
US7638862B2 (en) Die attach paddle for mounting integrated circuit die
JPH09307043A (ja) リードフレーム部材とその製造方法、および該リードフレーム部材を用いた半導体装置
JPH09321088A (ja) 半導体集積回路装置の製造方法およびそれにより得られるモジュール基板ならびに電子機器
CN104124180B (zh) 芯片封装结构的制作方法
JP2005347651A (ja) 配線基板および配線基板のクラック検出方法
JPH1079466A (ja) 半導体装置
CN101552215A (zh) 覆晶封装结构及其封装制程
KR100377468B1 (ko) 볼 그리드 어레이 반도체 패키지의 와이어 본딩용 클램프및 이를 이용한 와이어 본딩 검사 방법
KR100370839B1 (ko) 반도체패키지용써킷테이프
JP2004172647A (ja) 半導体装置
JP2006032470A (ja) 電子装置
JP2002164497A (ja) 半導体装置およびその製造方法
JP2004273788A (ja) 電子装置の製造方法
JP2002124596A (ja) 半導体装置およびその製造方法
JPH04180244A (ja) Icパッケージ
JPH09129681A (ja) 半導体チップと印刷回路基板間の電気的連結構造物及びその連結方法
JP2013165304A (ja) 半導体装置の製造方法
JPH06310650A (ja) リードフレーム及びその製造方法

Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees