TW525247B - Method for a manufacturing a semiconductor device - Google Patents

Method for a manufacturing a semiconductor device Download PDF

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Publication number
TW525247B
TW525247B TW090117583A TW90117583A TW525247B TW 525247 B TW525247 B TW 525247B TW 090117583 A TW090117583 A TW 090117583A TW 90117583 A TW90117583 A TW 90117583A TW 525247 B TW525247 B TW 525247B
Authority
TW
Taiwan
Prior art keywords
main surface
manufacturing
semiconductor
wafer
semiconductor device
Prior art date
Application number
TW090117583A
Other languages
English (en)
Chinese (zh)
Inventor
Kenetsu Yokogawa
Yoshinori Momonoi
Kazunori Tsujimoto
Shinichi Tachi
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW525247B publication Critical patent/TW525247B/zh

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0452—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers
    • H10P72/0454—Apparatus for manufacturing or treating in a plurality of work-stations characterised by the layout of the process chambers surrounding a central transfer chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3244—Gas supply means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/27—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers
    • H10P70/273—Cleaning during device manufacture during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers the processing being a delineation of conductive layers, e.g. by RIE
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0406—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H10P72/0418—Apparatus for fluid treatment for etching
    • H10P72/0421—Apparatus for fluid treatment for etching for drying etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H10P72/0474—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one lithography chamber

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
TW090117583A 2001-01-16 2001-07-18 Method for a manufacturing a semiconductor device TW525247B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001007158A JP4016598B2 (ja) 2001-01-16 2001-01-16 半導体装置の製造方法

Publications (1)

Publication Number Publication Date
TW525247B true TW525247B (en) 2003-03-21

Family

ID=18874942

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090117583A TW525247B (en) 2001-01-16 2001-07-18 Method for a manufacturing a semiconductor device

Country Status (4)

Country Link
US (1) US6713401B2 (https=)
JP (1) JP4016598B2 (https=)
KR (1) KR100856175B1 (https=)
TW (1) TW525247B (https=)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3997859B2 (ja) * 2002-07-25 2007-10-24 株式会社日立製作所 半導体装置の製造方法および製造装置
WO2004030051A2 (en) * 2002-09-30 2004-04-08 Lam Research Corporation System for substrate processing with meniscus, vacuum, ipa vapor, drying manifold
JPWO2004107426A1 (ja) * 2003-05-27 2006-07-20 有限会社パーソナルクリエイション 磁石を備えた基板の処理装置及び処理方法
JP2006167849A (ja) * 2004-12-15 2006-06-29 Denso Corp マイクロ構造体の製造方法
JP4933789B2 (ja) * 2006-02-13 2012-05-16 東京エレクトロン株式会社 基板処理装置、基板処理方法及び記憶媒体
CN101331594B (zh) * 2006-06-22 2012-03-28 里巴贝鲁株式会社 处理装置、处理方法及等离子源
KR100842745B1 (ko) * 2006-11-30 2008-07-01 주식회사 하이닉스반도체 스캔 인젝터를 가지는 플라즈마 공정 장비 및 공정 방법
JP2008153007A (ja) * 2006-12-15 2008-07-03 Nisshin:Kk プラズマ発生装置
JP4503095B2 (ja) 2007-05-15 2010-07-14 キヤノンアネルバ株式会社 半導体素子の製造方法
EP2036856B1 (en) * 2007-09-04 2018-09-12 Mitsubishi Materials Corporation Clean bench and method of producing raw material for single crystal silicon
CN101971298A (zh) 2007-11-02 2011-02-09 佳能安内华股份有限公司 表面处理设备和表面处理方法
JP5452894B2 (ja) * 2008-07-17 2014-03-26 東京エレクトロン株式会社 基板処理方法、基板処理装置および記憶媒体
JP5583503B2 (ja) * 2010-07-14 2014-09-03 東京エレクトロン株式会社 基板洗浄装置、およびこれを備える塗布現像装置
US8844793B2 (en) * 2010-11-05 2014-09-30 Raytheon Company Reducing formation of oxide on solder
CN104425289B (zh) * 2013-09-11 2017-12-15 先进科技新加坡有限公司 利用激发的混合气体的晶粒安装装置和方法
US10895539B2 (en) * 2017-10-20 2021-01-19 Lam Research Corporation In-situ chamber clean end point detection systems and methods using computer vision systems
CN114743853A (zh) * 2021-01-07 2022-07-12 中国科学院微电子研究所 一种半导体处理腔室、设备及半导体处理方法
US12406837B2 (en) * 2022-06-15 2025-09-02 Applied Materials, Inc. Reaction cell for species sensing

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE68909422T2 (de) * 1988-01-11 1994-01-27 Etec Systems Inc Berührungsloses Reinigungsverfahren für Oberflächen mit Hilfe eines flachen Luftkissenlagers.
US5403434A (en) * 1994-01-06 1995-04-04 Texas Instruments Incorporated Low-temperature in-situ dry cleaning process for semiconductor wafer
JP3348804B2 (ja) 1994-09-20 2002-11-20 株式会社日立製作所 エッチング後処理方法
JP3563462B2 (ja) 1994-11-15 2004-09-08 松下エコシステムズ株式会社 活性空気による乾式洗浄方法とその装置、および除電方法
JPH0917776A (ja) 1995-06-27 1997-01-17 Sony Corp 半導体装置の製造方法及び半導体製造装置
US5914278A (en) * 1997-01-23 1999-06-22 Gasonics International Backside etch process chamber and method
JPH10256231A (ja) * 1997-03-10 1998-09-25 Sony Corp ウエハ処理装置及びウエハ処理方法
US6042687A (en) * 1997-06-30 2000-03-28 Lam Research Corporation Method and apparatus for improving etch and deposition uniformity in plasma semiconductor processing

Also Published As

Publication number Publication date
US20020094691A1 (en) 2002-07-18
KR100856175B1 (ko) 2008-09-03
JP2002217169A (ja) 2002-08-02
KR20020061458A (ko) 2002-07-24
JP4016598B2 (ja) 2007-12-05
US6713401B2 (en) 2004-03-30

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Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees