TW520610B - A method of increasing the length of useful life of molybdenum disilicide type heating elements when heat treating electronic ceramics - Google Patents

A method of increasing the length of useful life of molybdenum disilicide type heating elements when heat treating electronic ceramics Download PDF

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TW520610B
TW520610B TW090128856A TW90128856A TW520610B TW 520610 B TW520610 B TW 520610B TW 090128856 A TW090128856 A TW 090128856A TW 90128856 A TW90128856 A TW 90128856A TW 520610 B TW520610 B TW 520610B
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heating element
patent application
useful life
scope
heating elements
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TW090128856A
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English (en)
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Mats Sundberg
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Sandvik Ab
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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/58085—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides
    • C04B35/58092—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides based on refractory metal silicides
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/18—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on silicides
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D1/00—Casings; Linings; Walls; Roofs
    • F27D1/0003—Linings or walls
    • F27D1/0036—Linings or walls comprising means for supporting electric resistances in the furnace
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/148—Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/14—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment
    • F27B9/20—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace
    • F27B9/26—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace on or in trucks, sleds, or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Structural Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Metallurgy (AREA)
  • General Engineering & Computer Science (AREA)
  • Resistance Heating (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Products (AREA)
  • Furnace Charging Or Discharging (AREA)
  • Furnace Details (AREA)

Description

520610 A7 B7 五、發明説明（ 本發明有關於當加熱處理電子陶瓷時增加發熱元件之有 用壽命的方法。該陶瓷可以是陶鐵磁體（磁性陶瓷）及鈦酸鹽 (例如 BaTi03)。 更特別地，本發明有關於矽化鉬型式及矽化鎢鉬的元 件’包括以這些材料為基礎的合金。該元件由應用者以多 種設計製造。 電子陶瓷現在使用在許多應用，例如，光電、行動電話 及、/'車電子元件。具有妈鈦礦？構造之電子陶瓷具有優異 的介電’壓電及鐵電性質。該材料的例子包括BaTi〇3及 Pb(Zr，Ti)〇3。典型地從該材料製造的元件是共振器，濾波 為及電容器。例如電容器是以所謂的多層電容器（MLCC)的 形式製造。該陶瓷常與金屬導體，如鎳，在熱處理階段做 接合。 當使用該發熱元件在所謂的電子陶瓷製造時，該元件常 放在一支撐表面上及個別地從連續燒結爐的爐床及爐頂加 熱。一種在該爐中發熱元件的長而較佳的設計，例如 Riedhammer型式的爐子或所謂的陶鐵磁體燒結爐是所謂的4 臂（4-arm)曲折元件在加熱區及連接部各量出6/12 mm。 該元件典型地放在鋁矽酸鹽顆粒的基床或支撐層上，其 也可放在純氧化鋁磚上。該可適合發熱元件M〇Si2至1600°C (沒有化學反應)的鋁矽酸鹽分別是矽線石與富鋁紅柱石。矽 線石與富鋁紅柱石在與發展在MoSi2表面上之Si02層發生反 應前可以使用很長一段時間。這是因為該鋁矽酸鹽與S i Ο 2 層的反應比Si〇2層與氧化鋁碑的反應慢。該反應引起鋁被 4
本紙張尺度適用中國國家標準(CNS) A4規格(21〇 X 297公D
裝
線 520610 A7 _______ B7 五、發明説明（2 ) 合金化在該S102層中，因此弱化該層保護該元件材料的能 力，導致該元件較短的壽命長度。 在與該表面層反應之後，接著一反應也發生在塊體材料 内部，導致進一步的腐蝕及弱化。 沒有該顆粒層，或礫石床，由於在元件表面上的si〇2直 接與Ah〇3碑接觸將發生較快之反應。 許多電子陶瓷在爐中熱處理的溫度從1200至15〇(rc的範 圍及更高。除了氮氣，氣氛典型地也包含約5%氫氣其具有 不同的露點。例如，露點可以是+ 2 〇 t。 已知在許多例子中該元件有用的壽命長度大部份落在期 .望的3-5年範圍内，以及在某些例子僅延伸幾個月。該局部 壽命長度的問題之原因是該侵略性氫氣與礫石床反應以致 形成熔解，其主要是包含鋁矽酸鹽。該發熱元件沉至該熔 解物底部，用其增加溫度，發生加速腐蝕及結果導致元件 溫度增加。並且，礫石床燒結成堅固的氧化鋁磚。該問題 也可以發生在不含氫氣的氣氛中，藉由把元件埋入顆粒層 中，結果溫度改變及於是尺寸改變。 該碟石床，或顆粒層，也使製造輸送及爐子保修更難實 施。 因此需要從製程中消除該礫石。 本發明符合該迫切需要。 本發明因此有關於增加發熱元件之有用壽命的方法其基 本上包括二矽化鉬及其基礎材料的合金，其中該元件在熱 處理‘程中操作在尚溫’及其中該元件置靠在爐床及/或在 - ————————————— - 3 · 本紙張尺度適用巾S S家標準(CNS) A4規格(210X 297公爱) 一 一' 520610 A7 B7 五、發明説明（ 爐頂’其中該方法具有的特徵是致使發熱元件直接置放與 氧化链碑接鄰；及其中該發熱元件材料包含矽化鉬及其合 金’其中遠材料致使包含鋁至足夠含量以在個別發熱元件 表面上維持一穩定的，緩慢成長的氧化鋁層。 本發明現在將部份參考附圖更詳細的說明，其中 圖1 5尤明應用本發明的爐子設計。 圖1s兑明該種相關的爐子部份。該圖表示一段，例如，一 加熱區’屬於一所謂的推進爐其中通過在發熱元件間之空 間的材料放，例如，在執道上向前推的一陶瓷匣板上。 為了從上方加熱材料，一礫石層或顆粒床1放在一氧化鋁 板2之上。一種四臂元件3放在顆粒床上方。一種“加熱卡 S包括氧化紹磚-礫石床-元件被推進隔室/棚架平面4位在 包圍的絕緣磚5之内。相同步驟用在從上方及從下方加熱的 疋件’當從下方加熱時不同的是使用一上部氧化鋁板6。自 然地’利用元件置放在礫石床上的原理，可以使用其他爐 子的結構。 本發明有關於增加發熱元件之有用壽命的方法其基本上 由一石夕化銷及其基礎材料的合金所組成，其中該元件在熱 處理製程中操作在高溫，例如，一含氫氣的腐蝕氣氛，及 其中該元件置靠在爐床及/或放置在鄰接爐頂。 在說明的具體實施例中，發熱元件3直接鄰接氧化鋁磚。 該方法在圖1中之礫石床1根據本發明中是被排除。 發熱元件3所包含的材料包括矽化鉬及其合金，致使該材 料包含足夠紹以在該發熱元件表面上維持一穩定的，緩慢 -6- 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐)
裝 線 520610 A7 B7 五、發明説明（4 成長的氧化鋁層。 在該具體實施例的情形中，因此獲得一緩慢成長的氧化 铭層其在有關熱處理電子陶瓷方面的溫度範圍内是穩定 的。 根據一較佳具體實施例，發熱元件所包含的材料所引起 的包括Mc^SikAlA，及也引起包括一足夠的鋁。 根據一具體實施例，X是在〇. 2-0.6的等級。 較佳的是\在0.4-0.5的範圍。其導致一穩定的氧化物層而 同時獲得一組成其有高度地溫度容忍性及具有好的機械性 質。 根據本發明的較佳.具體實施例，該發熱元件材料包含 40%體積的八丨2〇3。該氧化鋁由一元件機械上穩定化的相及 抗異常粒徑增長的紹碎酸鹽相所組成。 本方法因此不需一礫石層，於是有利於製造，輸送及爐 子維修。為何不需要一礫石層的原因是，因為氧化鋁置放 在氧化銘上。 進步，該糸統，發熱元件/蝶石層/氧化铭磚的腐姓風險 被降低，於是大大延長發熱元件的有用壽命及因此使操作 妨礙最小。 在則文提到的元件材料之適合性是根據Ai2〇3陶瓷到達極 咼溫的腐飯環境中之抗腐ϋ的本質特性。 本發明將不限定在僅考慮本說明型式的爐子，而可應用 至存寶前面提到之問題的其他型式的爐子。

Claims (1)

  1. 520610 A8 B8 C8 D8 冷/ // :東^0 1 2 8 8 5 6號專利申請案 r ’ ; 、中文申請專利範圍修正本(91;厂月7 (------------------------- I _ …丨 __"_" 六 申請專利範圍 1❿發熱元件之有用壽命之方法，其基本上由石夕化 銦及其基礎材料的合金所組成，該元件在熱處理製程中 刼作在南溫及該元件置靠在爐床及/或放置在鄰接爐頂， 具有的特徵是致使發熱元件直接置放與氧化㉝碑材料接 鄰〃中D玄發熱元件材料包含石夕化鉬及其合金，及其中 該材料致使包含鋁至足夠含量以在發熱元件表面上維持 一穩定的，緩慢成長的氧化鋁層。 2·如申請專利範圍第丨項之方法，其特徵在於發熱元件材料 包含Mc^Si^xAl,)2，該材料被引起包括一足夠的鋁。 3.如申請專利範圍第丨或2項之方法，其特徵在於χ位在〇.2_ 〇 · 6的範圍。 4.如申請專利範圍第丨或2項之方法，具有的特徵是<位在 0.40-0.50的範圍。 5·如申請專利範圍第丨或2項之方法，具有的特徵是該發熱 元件材料包含高達4 0 °/〇體積的a 12 Ο 3。 O:\75\75126-911127.DOC\ 5 本紙張尺度適用中國國家標準(CNS) A4規格(210X 297公釐）
TW090128856A 2000-11-24 2001-11-21 A method of increasing the length of useful life of molybdenum disilicide type heating elements when heat treating electronic ceramics TW520610B (en)

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SE0004329A SE520148C3 (sv) 2000-11-24 2000-11-24 Förfarande för att öka livslängden hos värmeelement av molybdendisilicidtyp vid värmebehandling av elektroniska keramer

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US (1) US6921885B2 (zh)
EP (1) EP1336324B1 (zh)
JP (1) JP4235447B2 (zh)
KR (1) KR100557254B1 (zh)
CN (1) CN1234259C (zh)
AT (1) ATE383057T1 (zh)
AU (1) AU2002215292A1 (zh)
DE (1) DE60132237T2 (zh)
ES (1) ES2296822T3 (zh)
NO (1) NO20032139D0 (zh)
SE (1) SE520148C3 (zh)
TW (1) TW520610B (zh)
WO (1) WO2002043440A1 (zh)

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Publication number Priority date Publication date Assignee Title
SE521794C2 (sv) * 2002-04-05 2003-12-09 Sandvik Ab Tillverkningsförfarande för ett värmeelement av molybdensilicidtyp, jämte ett värmeelement
SE521796C2 (sv) * 2002-04-05 2003-12-09 Sandvik Ab Förfarande för tillverkning av ett värmeelement av molybdensilicidtyp jämte ett värmeelement
ES2291624T3 (es) * 2002-04-05 2008-03-01 Sandvik Intellectual Property Ab Metodo para la fabricacion de un elemento termico de tipo de siliciuro de molibdeno.
KR100974354B1 (ko) * 2010-05-28 2010-08-05 주식회사 대림기술단 공동주택의 감전사고방지형 콘센트
US10995036B2 (en) * 2018-03-18 2021-05-04 Sandvik Intellectual Property Ab Heating element

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US20040094535A1 (en) 2004-05-20
SE0004329L (sv) 2002-05-25
SE520148C2 (sv) 2003-06-03
CN1234259C (zh) 2005-12-28
NO20032139D0 (no) 2003-05-13
ATE383057T1 (de) 2008-01-15
EP1336324B1 (en) 2008-01-02
SE520148C3 (sv) 2003-07-16
KR20030061799A (ko) 2003-07-22
CN1459215A (zh) 2003-11-26
DE60132237D1 (de) 2008-02-14
WO2002043440A1 (en) 2002-05-30
US6921885B2 (en) 2005-07-26
JP4235447B2 (ja) 2009-03-11
AU2002215292A1 (en) 2002-06-03
ES2296822T3 (es) 2008-05-01
EP1336324A1 (en) 2003-08-20
SE0004329D0 (sv) 2000-11-24
JP2004515041A (ja) 2004-05-20
KR100557254B1 (ko) 2006-03-07
DE60132237T2 (de) 2008-12-11

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