CN1459215A - 一种增加钼硅化物加热元件使用寿命的方法 - Google Patents

一种增加钼硅化物加热元件使用寿命的方法 Download PDF

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CN1459215A
CN1459215A CN01815859A CN01815859A CN1459215A CN 1459215 A CN1459215 A CN 1459215A CN 01815859 A CN01815859 A CN 01815859A CN 01815859 A CN01815859 A CN 01815859A CN 1459215 A CN1459215 A CN 1459215A
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heating element
useful life
silicide
molybdenum silicide
aluminium
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CN1234259C (zh
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M·圣德比尔格
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Sandvik Intellectual Property AB
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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/58085—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides
    • C04B35/58092—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides based on refractory metal silicides
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
    • C22C29/18—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on silicides
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D1/00—Casings; Linings; Walls; Roofs
    • F27D1/0003—Linings or walls
    • F27D1/0036—Linings or walls comprising means for supporting electric resistances in the furnace
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/148—Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B9/00—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity
    • F27B9/14—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment
    • F27B9/20—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace
    • F27B9/26—Furnaces through which the charge is moved mechanically, e.g. of tunnel type; Similar furnaces in which the charge moves by gravity characterised by the path of the charge during treatment; characterised by the means by which the charge is moved during treatment the charge moving in a substantially straight path tunnel furnace on or in trucks, sleds, or containers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49082—Resistor making

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Ceramic Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Metallurgy (AREA)
  • Manufacturing & Machinery (AREA)
  • Structural Engineering (AREA)
  • Resistance Heating (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Ceramic Products (AREA)
  • Furnace Charging Or Discharging (AREA)
  • Furnace Details (AREA)

Abstract

一种增加加热元件使用寿命的方法，加热元件主要包括钼硅化物和此基础材料的合金，所述元件在热处理过程中在高温下工作并且放置在炉底和/或炉顶。本发明的特征在于使加热元件直接接触氧化铝砖材料，其中加热元件材料包括钼硅化物及其合金，且其中使所述材料包含足够的铝以保持加热元件表面的氧化铝层的稳定并缓慢增长。

Description

一种增加钼硅化物加热元件使用寿命的方法
本发明涉及一种增加应用在电子陶瓷热处理过程中的加热元件的使用寿命的方法。此类陶瓷可以为铁氧体(磁性陶瓷)和钛酸盐(例如BaTiO3)。
更具体的，本发明涉及钼硅化物和钼钨硅化物类型的元件，包括此基础材料的不同合金。申请人依据许多的设计加工这些元件。
目前，电子陶瓷使用在很多场合，即，光电子学，移动电话和车用电子设备。钙钛矿型电子陶瓷具有介电性、压电性和铁电性，及其它性质(among other things)。这类材料的例子包括BaTiO3和Pb(Zr，Ti)O3。通常由这类材料制备的组件有谐振器、滤波器和电容器。例如，电容器可以制成所谓的多层电容器(MLCC)的形式。陶瓷在热处理阶段，通常与金属导体如镍进行接触。
当此种加热元件使用在所谓的电子陶瓷的生产中时，这种元件通常被放置在一支撑表面上，并分别从连续烧结炉的底部和顶部加热。在这类加热炉中使用的加热元件的一个长期以来优选的设计，例如，所谓的Riedhammer型窑炉即所谓的铁氧体烧结炉是所谓的4臂曲折的(4-armmeander)元件，在加热区和连接部分分别为6和12mm。
此类元件一般放置在一起支撑作用的铝-硅酸盐颗粒组成的砾石层上，再依次将砾石层安置在纯粹的氧化铝砖砌物上。此种硅酸铝与MoSi2加热元件在高达1600℃下相容(不发生化学反应)，分别为硅线石和莫来石类型。硅线石和莫来石在与SiO2层发生反应前可使用一段长时间，该SiO2层是在MoSi2元件表面产生的。这是因为硅酸铝与SiO2反应比与氧化铝砖反应慢。此化学反应引起铝在SiO2层合金化，从而减弱了该层对元件材料的保护性能，导致元件使用寿命较短。
在与表面层的化学反应之后，在加热元件的大量材料发生反应，导致更进一步的腐蚀和弱化。
没有所述颗粒层或砾石层，由于SiO2的性质，在元件表面直接接触Al2O3砖的情况下，会发生更快速的反应。
许多电子陶瓷热处理的炉温范围从1200到1500℃或更高。除氮气之外，气氛中也一般含有大约5％的氢气，气氛具有可变的露点。例如，露点可能是+20℃。
在很多案例中已经有所提及，所述元件的使用寿命显著下降到预计的3-5年时间以下，而且在某些情况下，只有几个月。局部寿命问题的原因是侵蚀性的氢气与砾石层反应，从而形成了主要包含硅酸铝的熔炼物(smelt)。此加热元件沉落于熔炼物中，随之发生温度增加导致元件的加速腐蚀和温度增加。而且，此砾石层坚固地烧结到氧化铝砖中。在不含氢气的气氛中，此类问题也会发生，由于温度和外形的变化，元件将埋于颗粒层中。
此砾石层，或颗粒层，也会使制造、运输和窑炉处理过程的操作更困难。
因此，希望能在工艺中去除砾石层。
本发明实现了这个愿望。
本发明因此涉及一种增加加热元件的使用寿命的方法，此类加热元件的基本组成为二硅化钼和此基础材料的合金，在热处理过程中，所述元件在高温下工作，其中所述元件放置在炉底上并/或抵住窑炉炉顶，其中此方法的特征在于使所述加热元件直接邻近氧化铝砖；还在于加热元件材料中含钼硅化物及其合金，其中，使得所述材料包含足够量的铝从而保持各加热元件表面的氧化铝层的稳定和缓慢增长。
将部分参照附图对本发明进行更详细地描述，其中，
-图1说明了本发明中采用的窑炉的形式。
图1表示了涉及的此类窑炉的一部分。此图表示了推动通过式(through-pushing)窑炉的一部分，例如一个加热区，例如在炉中，材料可放在如由轨道向前推动的陶瓷盘上，通过加热元件间的空间。
对于从材料上部的加热，砾石层和颗粒层1放置在一氧化铝盘2上。将一个4臂元件3放在颗粒层上。一个包括氧化铝砖-砾石层-元件的“加热盒”被推进一个被砖隔离物5包围着的隔段/隔板平面4内。同样的步骤应用在从上部和从下部加热的元件中，不同的是从下部加热时，要使用到一个放在上部的氧化铝盘6。自然的，可以使用其他适用本原则的窑炉的结构，其中元件放置在砾石层上。
本发明涉及一种增加加热元件的使用寿命的方法，此种加热元件主要包含二硅化钼及这种基础材料的合金，在热处理过程中，所述元件在高温下工作，例如，处于一含氢气腐蚀性气氛中，其中所述元件放置在与炉底上和/或与炉顶接触的位置。
对于所说明的实施例的情况，加热元件3与氧化铝砖直接接触。这意味着依据本发明去掉了图1中的砾石层1。
加热元件3包含的材料包括钼硅化物及其合金，令所述材料包含足够量的铝以保持加热元件表面的氧化铝层的稳定和缓慢增长。
对于这个实施例的情况，获得了一缓慢增长的氧化铝层，其在与电子陶瓷的热处理相关的温度范围内稳定。
依据一个优选的实施例，令加热元件包含的材料包含Mo(Si1-xAlx)2及足够的铝。
依据一个优选的实施例，x在0.2-0.6中的量级。
x优选在0.40-0.50范围内。这产生了稳定氧化物层，并同时获得一种温度耐久性好并有良好机械性能的组合物。
根据本发明的一个优选实施例，加热元件的材料包含多达40％体积比的Al2O3。氧化铝形成元件的机械稳定相并阻碍铝硅化物相的异常颗粒尺寸扩大。
本发明方法消除了对砾石层的需求，从而有利于加工、运输和炉内处理。不需要砾石层的原因在于是氧化铝放置于氧化铝上。
进而，加热元件/砾石层/氧化铝砖系统被腐蚀的危险减小了，从而很大程度地延长了加热元件的使用寿命并且减小了操作中的干扰。
上述内容中的元件材料的适用性是基于Al2O3陶瓷的内在性质，以在腐蚀性环境下，直至很高温度时抗腐蚀。
不应认为本发明仅限于所描述的窑炉种类，其可以应用在其它种类的有上述问题存在的烧结炉中。

Claims (5)

1.一种增加加热元件使用寿命的方法，此元件的基本组成为钼硅化物及此基础材料的合金，在热处理过程中，所述元件在高温下工作，并且设置在炉底和/或炉顶上，其特征在于加热元件直接与氧化铝砖材料邻接，其中此加热元件包含钼硅化物及其合金，并令所述材料含有足够的铝，以保持加热元件表面的氧化铝层的稳定和缓慢增长。
2.根据权利要求1的方法，其特征在于加热元件材料包含Mo(Si1-xAlx)2，令所述材料包含足够的铝。
3.根据权利要求1或2的方法，其特征在于x在0.2-0.6范围内。
4.根据权利要求1、2或3的方法，其特征在于x在0.40-0.50范围内。
5.根据权利要求1、2、3或4的方法，其特征在于加热元件材料包含最多至40％体积比的Al2O3。
CNB018158595A 2000-11-24 2001-11-20 一种增加钼硅化物加热元件使用寿命的方法 Expired - Fee Related CN1234259C (zh)

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SE0004329A SE520148C3 (sv) 2000-11-24 2000-11-24 Förfarande för att öka livslängden hos värmeelement av molybdendisilicidtyp vid värmebehandling av elektroniska keramer
SE00043299 2000-11-24

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SE521796C2 (sv) * 2002-04-05 2003-12-09 Sandvik Ab Förfarande för tillverkning av ett värmeelement av molybdensilicidtyp jämte ett värmeelement
SE521794C2 (sv) * 2002-04-05 2003-12-09 Sandvik Ab Tillverkningsförfarande för ett värmeelement av molybdensilicidtyp, jämte ett värmeelement
EP1492740B1 (en) * 2002-04-05 2007-09-05 Sandvik Intellectual Property AB Method of making a heating element of molybdenum silicide type
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CN111868009B (zh) * 2018-03-18 2021-12-28 山特维克知识产权股份有限公司 加热元件

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SE520149C2 (sv) * 2000-09-29 2003-06-03 Sandvik Ab Förfarande för att öka livslängden hos värmeelement av molybdensilicidtyp vid lägre temperatur

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ATE383057T1 (de) 2008-01-15
JP4235447B2 (ja) 2009-03-11
AU2002215292A1 (en) 2002-06-03
JP2004515041A (ja) 2004-05-20
US20040094535A1 (en) 2004-05-20
SE0004329D0 (sv) 2000-11-24
CN1234259C (zh) 2005-12-28
DE60132237T2 (de) 2008-12-11
WO2002043440A1 (en) 2002-05-30
EP1336324A1 (en) 2003-08-20
EP1336324B1 (en) 2008-01-02
ES2296822T3 (es) 2008-05-01
TW520610B (en) 2003-02-11
SE520148C2 (sv) 2003-06-03
NO20032139D0 (no) 2003-05-13
SE0004329L (sv) 2002-05-25
KR20030061799A (ko) 2003-07-22
KR100557254B1 (ko) 2006-03-07
US6921885B2 (en) 2005-07-26
DE60132237D1 (de) 2008-02-14
SE520148C3 (sv) 2003-07-16

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