KR100635963B1 - 규화몰리브덴 타입의 발열 소자와 그 제조 방법 - Google Patents
규화몰리브덴 타입의 발열 소자와 그 제조 방법 Download PDFInfo
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- KR100635963B1 KR100635963B1 KR1020047015774A KR20047015774A KR100635963B1 KR 100635963 B1 KR100635963 B1 KR 100635963B1 KR 1020047015774 A KR1020047015774 A KR 1020047015774A KR 20047015774 A KR20047015774 A KR 20047015774A KR 100635963 B1 KR100635963 B1 KR 100635963B1
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- South Korea
- Prior art keywords
- heating element
- molybdenum silicide
- molybdenum
- impurities
- heat generating
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- YXTPWUNVHCYOSP-UHFFFAOYSA-N bis($l^{2}-silanylidene)molybdenum Chemical compound [Si]=[Mo]=[Si] YXTPWUNVHCYOSP-UHFFFAOYSA-N 0.000 title claims abstract description 18
- 229910021344 molybdenum silicide Inorganic materials 0.000 title claims abstract description 18
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 11
- 238000010438 heat treatment Methods 0.000 title claims description 27
- 239000000463 material Substances 0.000 claims abstract description 30
- 239000012535 impurity Substances 0.000 claims abstract description 20
- 229910000278 bentonite Inorganic materials 0.000 claims abstract description 14
- 239000000440 bentonite Substances 0.000 claims abstract description 14
- SVPXDRXYRYOSEX-UHFFFAOYSA-N bentoquatam Chemical compound O.O=[Si]=O.O=[Al]O[Al]=O SVPXDRXYRYOSEX-UHFFFAOYSA-N 0.000 claims abstract description 14
- 239000004927 clay Substances 0.000 claims abstract description 13
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 10
- 229910018072 Al 2 O 3 Inorganic materials 0.000 claims abstract description 9
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 9
- 239000011733 molybdenum Substances 0.000 claims abstract description 9
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 6
- 239000000956 alloy Substances 0.000 claims abstract description 6
- 239000013078 crystal Substances 0.000 claims abstract description 6
- 229910000323 aluminium silicate Inorganic materials 0.000 claims abstract description 3
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000000034 method Methods 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 3
- 238000005485 electric heating Methods 0.000 claims 1
- 235000012216 bentonite Nutrition 0.000 description 12
- 229910052782 aluminium Inorganic materials 0.000 description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 239000000843 powder Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 229910021332 silicide Inorganic materials 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 229910016006 MoSi Inorganic materials 0.000 description 3
- 229910004298 SiO 2 Inorganic materials 0.000 description 3
- 241000607479 Yersinia pestis Species 0.000 description 3
- 238000002844 melting Methods 0.000 description 3
- 230000008018 melting Effects 0.000 description 3
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- YKTSYUJCYHOUJP-UHFFFAOYSA-N [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] Chemical compound [O--].[Al+3].[Al+3].[O-][Si]([O-])([O-])[O-] YKTSYUJCYHOUJP-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 229910010293 ceramic material Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 239000000356 contaminant Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000004299 exfoliation Methods 0.000 description 1
- 238000010304 firing Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
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- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/58085—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides
- C04B35/58092—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicides based on refractory metal silicides
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C29/00—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides
- C22C29/18—Alloys based on carbides, oxides, nitrides, borides, or silicides, e.g. cermets, or other metal compounds, e.g. oxynitrides, sulfides based on silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01C—RESISTORS
- H01C17/00—Apparatus or processes specially adapted for manufacturing resistors
- H01C17/06—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base
- H01C17/065—Apparatus or processes specially adapted for manufacturing resistors adapted for coating resistive material on a base by thick film techniques, e.g. serigraphy
- H01C17/06506—Precursor compositions therefor, e.g. pastes, inks, glass frits
- H01C17/06513—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component
- H01C17/0656—Precursor compositions therefor, e.g. pastes, inks, glass frits characterised by the resistive component composed of silicides
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
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- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
- H05B3/00—Ohmic-resistance heating
- H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
- H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
- H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
- H05B3/148—Silicon, e.g. silicon carbide, magnesium silicide, heating transistors or diodes
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- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
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- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/349—Clays, e.g. bentonites, smectites such as montmorillonite, vermiculites or kaolines, e.g. illite, talc or sepiolite
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Abstract
Description
Claims (12)
- 규화몰리브덴 타입의 재료와 이 기본 재료의 합금을 포함하는 발열 소자의 제조 방법에 있어서,몰리브덴 알루미노 규화물 Mo(Si1-yAly)2와 벤토나이트 클레이를 공지의 방식으로 혼합하여 Mo(Si1-xAlx)2 및 Al2O3를 함유하는 재료를 제조하는 단계를 포함하고, 상기 벤토나이트 클레이는 불순물을 함유하게 되며, 상기 규화몰리브덴은 상기 불순물과 합금화될 수 없고, 상기 규화몰리브덴의 결정격자의 대칭성은 불순물의 함량을 2000 ppm 미만으로 함으로써 유지되는 것을 특징으로 하는 발열 소자 제조 방법.
- 제1항에 있어서, 불순물 Mg, Ca, Fe, Na 및 K의 총함량이 2000 ppm 미만이도록 되어 있는 것을 특징으로 하는 발열 소자 제조 방법.
- 제1항 또는 제2항에 있어서, 상기 불순물의 함량이 1000 ppm 미만이도록 되어 있는 것을 특징으로 하는 발열 소자 제조 방법.
- 제1항 또는 제2항에 있어서, x는 0.4 ~ 0.6의 범위 내에 있도록 되어 있는 것을 특징으로 하는 발열 소자 제조 방법.
- 제1항 또는 제2항에 있어서, x는 0.45 ~ 0.55의 범위 내에 있도록 되어 있는 것을 특징으로 하는 발열 소자 제조 방법.
- 제1항 또는 제2항에 있어서, Mo(Si1-xAlx)2 재료의 몰리브덴을 부분적으로 Re 또는 W로 대체할 수 있는 것을 특징으로 하는 발열 소자 제조 방법.
- 규화몰리브덴 타입의 재료와 이 기본 재료의 합금을 포함하는 전기 발열 소자에 있어서,상기 발열 소자는 Mo(Si1-xAlx)2 및 Al2O3를 함유하는 재료를 포함하고, 상기 재료는 불순물을 함유하며, 상기 규화몰리브덴은 상기 불순물과 합금화될 수 없고, 상기 규화몰리브덴의 결정격자의 대칭성은 상기 불순물의 함량을 2000 ppm 미만으로 함으로써 유지되는 것을 특징으로 하는 발열 소자.
- 제7항에 있어서, 불순물 Mg, Ca, Fe, Na 및 K의 총함량이 2000 ppm 미만이도록 되어 있는 것을 특징으로 하는 발열 소자.
- 제7항 또는 제8항에 있어서, 상기 불순물의 함량이 1000 ppm 미만이도록 되어 있는 것을 특징으로 하는 발열 소자.
- 제7항 또는 제8항에 있어서, x는 0.4 ~ 0.6의 범위 내에 있도록 되어 있는 것을 특징으로 하는 발열 소자.
- 제7항 또는 제8항에 있어서, x는 0.45 ~ 0.55의 범위 내에 있도록 되어 있는 것을 특징으로 하는 발열 소자.
- 제7항 또는 제8항에 있어서, Mo(Si1-xAlx)2 재료의 몰리브덴을 부분적으로 Re 또는 W로 대체할 수 있는 것을 특징으로 하는 발열 소자.
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
SE0201043-7 | 2002-04-05 | ||
SE0201043A SE521796C2 (sv) | 2002-04-05 | 2002-04-05 | Förfarande för tillverkning av ett värmeelement av molybdensilicidtyp jämte ett värmeelement |
PCT/SE2003/000380 WO2003087015A1 (en) | 2002-04-05 | 2003-03-06 | Method of making a heating element of molybdenum silicide type and a heating element |
Publications (2)
Publication Number | Publication Date |
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KR20040105845A KR20040105845A (ko) | 2004-12-16 |
KR100635963B1 true KR100635963B1 (ko) | 2006-10-19 |
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Application Number | Title | Priority Date | Filing Date |
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KR1020047015774A KR100635963B1 (ko) | 2002-04-05 | 2003-03-06 | 규화몰리브덴 타입의 발열 소자와 그 제조 방법 |
Country Status (8)
Country | Link |
---|---|
US (1) | US7166823B2 (ko) |
EP (1) | EP1492741B1 (ko) |
JP (2) | JP4913988B2 (ko) |
KR (1) | KR100635963B1 (ko) |
CN (1) | CN100349826C (ko) |
AU (1) | AU2003210093A1 (ko) |
SE (1) | SE521796C2 (ko) |
WO (1) | WO2003087015A1 (ko) |
Families Citing this family (5)
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CN102405198A (zh) * | 2009-05-05 | 2012-04-04 | 山特维克知识产权股份有限公司 | 加热元件 |
CN102173814B (zh) * | 2011-03-04 | 2013-02-06 | 郑州嵩山电热元件有限公司 | 一种二硅化钼基电热元件及其制备方法 |
EP3394001B1 (en) * | 2015-12-21 | 2019-11-06 | Sandvik Intellectual Property AB | A new molybdenum silicide based composition |
PL3768653T3 (pl) * | 2018-03-18 | 2022-06-20 | Kanthal Ab | Element grzejny zawierający części dikrzemku molibdenu |
US11932579B2 (en) | 2018-11-16 | 2024-03-19 | Kanthal Ab | Process for manufacturing a chromium alloyed molybdenum silicide portion of a heating element |
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GB731616A (en) * | 1951-08-24 | 1955-06-08 | Metro Cutanit Ltd | Improvements relating to the manufacture of electric resistance heating elements |
GB751294A (en) * | 1953-12-31 | 1956-06-27 | Metro Cutanit Ltd | Improvements in and relating to methods of making tubular heating elements from powdered materials |
JPH01313362A (ja) * | 1988-06-09 | 1989-12-18 | Ngk Spark Plug Co Ltd | セラミック発熱体およびその製造方法 |
JPH03141162A (ja) * | 1989-10-26 | 1991-06-17 | Riken Corp | 二珪化モリブデン発熱体の製造法 |
WO1995031416A1 (en) * | 1994-05-13 | 1995-11-23 | Micropyretics Heaters International | Sinter-homogenized heating products |
AU2606895A (en) | 1994-05-13 | 1995-12-05 | Micropyretics Heaters International | Sinter-homogenized heating products |
JP3230793B2 (ja) * | 1995-01-24 | 2001-11-19 | 富士電機株式会社 | セラミックス発熱体 |
SE504235C2 (sv) * | 1995-04-11 | 1996-12-09 | Kanthal Ab | Elektriskt motståndselement av molybdensilicidtyp |
EP0992470B1 (en) * | 1995-08-03 | 2006-03-08 | Ngk Insulators, Ltd. | Aluminium nitride sintered bodies and their use as substrate in an apparatus for producing semiconductors |
JPH10324571A (ja) * | 1997-05-23 | 1998-12-08 | Riken Corp | 二珪化モリブデン系セラミックス発熱体及びその製造方法 |
JP3657800B2 (ja) * | 1998-02-20 | 2005-06-08 | 株式会社リケン | 二珪化モリブデン系複合セラミックス発熱体及びその製造方法 |
SE512980C2 (sv) * | 1998-10-22 | 2000-06-12 | Flaekt Ab | Filteranordning för luftkanaler eller luftbehandlingsaggregat |
SE520251C2 (sv) * | 1999-05-20 | 2003-06-17 | Sandvik Ab | Motståndselement av molybdensilicidtyp för sintring av metallpulver |
SE9904170L (sv) * | 1999-11-18 | 2000-12-11 | Sandvik Ab | Molybdensilicid-material med hög hållfasthet |
SE519027C2 (sv) * | 2000-05-18 | 2002-12-23 | Sandvik Ab | Förfarande för att öka livslängden hos värmeelement vid lägre temperatur |
SE520149C2 (sv) * | 2000-09-29 | 2003-06-03 | Sandvik Ab | Förfarande för att öka livslängden hos värmeelement av molybdensilicidtyp vid lägre temperatur |
SE520148C3 (sv) * | 2000-11-24 | 2003-07-16 | Sandvik Ab | Förfarande för att öka livslängden hos värmeelement av molybdendisilicidtyp vid värmebehandling av elektroniska keramer |
CN1314448A (zh) * | 2001-04-26 | 2001-09-26 | 中国科学院上海硅酸盐研究所 | 二硅化钼基复合发热体及制备方法 |
SE521882C2 (sv) * | 2001-06-21 | 2003-12-16 | Sandvik Ab | Förfarande för framställning av en enfassammansättning innefattande metall |
-
2002
- 2002-04-05 SE SE0201043A patent/SE521796C2/sv unknown
-
2003
- 2003-03-06 CN CNB038074729A patent/CN100349826C/zh not_active Expired - Fee Related
- 2003-03-06 JP JP2003583974A patent/JP4913988B2/ja not_active Expired - Fee Related
- 2003-03-06 KR KR1020047015774A patent/KR100635963B1/ko active IP Right Grant
- 2003-03-06 WO PCT/SE2003/000380 patent/WO2003087015A1/en active Application Filing
- 2003-03-06 EP EP20030746180 patent/EP1492741B1/en not_active Expired - Lifetime
- 2003-03-06 AU AU2003210093A patent/AU2003210093A1/en not_active Abandoned
- 2003-03-06 US US10/510,146 patent/US7166823B2/en not_active Expired - Lifetime
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2010
- 2010-08-06 JP JP2010176887A patent/JP2011020920A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
US7166823B2 (en) | 2007-01-23 |
US20050242083A1 (en) | 2005-11-03 |
JP2005522402A (ja) | 2005-07-28 |
JP4913988B2 (ja) | 2012-04-11 |
SE521796C2 (sv) | 2003-12-09 |
EP1492741A1 (en) | 2005-01-05 |
EP1492741B1 (en) | 2015-04-22 |
JP2011020920A (ja) | 2011-02-03 |
SE0201043D0 (sv) | 2002-04-05 |
CN100349826C (zh) | 2007-11-21 |
AU2003210093A1 (en) | 2003-10-27 |
CN1642874A (zh) | 2005-07-20 |
WO2003087015A1 (en) | 2003-10-23 |
KR20040105845A (ko) | 2004-12-16 |
SE0201043L (sv) | 2003-10-06 |
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