TW517275B - Semiconductor integrated circuit - Google Patents
Semiconductor integrated circuit Download PDFInfo
- Publication number
- TW517275B TW517275B TW90132908A TW90132908A TW517275B TW 517275 B TW517275 B TW 517275B TW 90132908 A TW90132908 A TW 90132908A TW 90132908 A TW90132908 A TW 90132908A TW 517275 B TW517275 B TW 517275B
- Authority
- TW
- Taiwan
- Prior art keywords
- integrated circuit
- empty space
- semiconductor integrated
- scope
- pads
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 48
- 239000003990 capacitor Substances 0.000 claims abstract description 64
- 230000010355 oscillation Effects 0.000 claims description 5
- 230000002093 peripheral effect Effects 0.000 claims description 5
- 230000002079 cooperative effect Effects 0.000 claims description 3
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 230000010354 integration Effects 0.000 abstract description 4
- 235000012431 wafers Nutrition 0.000 description 20
- 238000009825 accumulation Methods 0.000 description 15
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0207—Geometrical layout of the components, e.g. computer aided design; custom LSI, semi-custom LSI, standard cell technique
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Semiconductor Integrated Circuits (AREA)
- Design And Manufacture Of Integrated Circuits (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2000400738 | 2000-12-28 | ||
| JP2001220882A JP2002261167A (ja) | 2000-12-28 | 2001-07-23 | 半導体集積回路 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW517275B true TW517275B (en) | 2003-01-11 |
Family
ID=26607058
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW90132908A TW517275B (en) | 2000-12-28 | 2001-12-28 | Semiconductor integrated circuit |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JP2002261167A (fr) |
| TW (1) | TW517275B (fr) |
| WO (1) | WO2002058156A1 (fr) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7391118B2 (en) | 2003-08-29 | 2008-06-24 | Advanced Semiconductor Engineering, Inc. | Integrated circuit device with embedded passive component by flip-chip connection and method for manufacturing the same |
| US10854585B2 (en) | 2018-07-20 | 2020-12-01 | Samsung Electronics Co., Ltd. | Semiconductor package with improved power integrity |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61263241A (ja) * | 1985-05-17 | 1986-11-21 | Matsushita Electronics Corp | ゲ−トアレイ |
| JPS63250165A (ja) * | 1987-04-06 | 1988-10-18 | Mitsubishi Electric Corp | 半導体装置 |
| JPH04306871A (ja) * | 1991-04-03 | 1992-10-29 | Olympus Optical Co Ltd | 半導体集積回路装置 |
| JPH065782A (ja) * | 1992-06-19 | 1994-01-14 | Hitachi Ltd | 半導体チップコーナー部のレイアウト方法、及び半導体集積回路装置 |
| JP2855975B2 (ja) * | 1992-07-06 | 1999-02-10 | 富士通株式会社 | 半導体集積回路 |
| JPH0786509A (ja) * | 1993-06-29 | 1995-03-31 | Nec Corp | 半導体集積回路 |
| JPH11297971A (ja) * | 1998-04-15 | 1999-10-29 | Toshiba Microelectronics Corp | 半導体装置およびその製造方法 |
-
2001
- 2001-07-23 JP JP2001220882A patent/JP2002261167A/ja active Pending
- 2001-12-27 WO PCT/JP2001/011551 patent/WO2002058156A1/fr active Application Filing
- 2001-12-28 TW TW90132908A patent/TW517275B/zh active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7391118B2 (en) | 2003-08-29 | 2008-06-24 | Advanced Semiconductor Engineering, Inc. | Integrated circuit device with embedded passive component by flip-chip connection and method for manufacturing the same |
| US7670876B2 (en) | 2003-08-29 | 2010-03-02 | Advanced Semiconductor Engineering, Inc. | Integrated circuit device with embedded passive component by flip-chip connection and method for manufacturing the same |
| US10854585B2 (en) | 2018-07-20 | 2020-12-01 | Samsung Electronics Co., Ltd. | Semiconductor package with improved power integrity |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2002261167A (ja) | 2002-09-13 |
| WO2002058156A1 (fr) | 2002-07-25 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent |