TW515082B - Semiconductor integrated circuit with noise detection circuits for detecting power supply noise - Google Patents

Semiconductor integrated circuit with noise detection circuits for detecting power supply noise Download PDF

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Publication number
TW515082B
TW515082B TW090121041A TW90121041A TW515082B TW 515082 B TW515082 B TW 515082B TW 090121041 A TW090121041 A TW 090121041A TW 90121041 A TW90121041 A TW 90121041A TW 515082 B TW515082 B TW 515082B
Authority
TW
Taiwan
Prior art keywords
circuit
noise
aforementioned
power supply
semiconductor integrated
Prior art date
Application number
TW090121041A
Other languages
English (en)
Chinese (zh)
Inventor
Fumio Yuuki
Katsuya Tanaka
Takeshi Kato
Teruhisa Shimizu
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Application granted granted Critical
Publication of TW515082B publication Critical patent/TW515082B/zh

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Classifications

    • G—PHYSICS
    • G06—COMPUTING OR CALCULATING; COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F11/00—Error detection; Error correction; Monitoring
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/003—Modifications for increasing the reliability for protection
    • H03K19/00346—Modifications for eliminating interference or parasitic voltages or currents
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/50—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor for integrated circuit devices, e.g. power bus, number of leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • General Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Computing Systems (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Quality & Reliability (AREA)
  • General Physics & Mathematics (AREA)
  • Semiconductor Integrated Circuits (AREA)
TW090121041A 2001-01-24 2001-08-27 Semiconductor integrated circuit with noise detection circuits for detecting power supply noise TW515082B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2001015195A JP4292720B2 (ja) 2001-01-24 2001-01-24 電源ノイズ検出回路を有する半導体集積回路およびプロセッサ

Publications (1)

Publication Number Publication Date
TW515082B true TW515082B (en) 2002-12-21

Family

ID=18881787

Family Applications (1)

Application Number Title Priority Date Filing Date
TW090121041A TW515082B (en) 2001-01-24 2001-08-27 Semiconductor integrated circuit with noise detection circuits for detecting power supply noise

Country Status (4)

Country Link
US (2) US20020096677A1 (enExample)
JP (1) JP4292720B2 (enExample)
KR (1) KR100691594B1 (enExample)
TW (1) TW515082B (enExample)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI408376B (zh) * 2008-12-05 2013-09-11 富士通股份有限公司 用於電壓變動量計算之方法與系統

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* Cited by examiner, † Cited by third party
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JP3981234B2 (ja) * 2000-02-21 2007-09-26 松下電器産業株式会社 マイクロコンピュータ
JP4000001B2 (ja) * 2002-04-22 2007-10-31 松下電器産業株式会社 クロック制御装置およびクロック制御方法
US7667477B2 (en) * 2003-08-22 2010-02-23 The New Industry Research Organization Circuit for detecting and measuring noise in semiconductor integrated circuit
JP5173216B2 (ja) * 2006-04-18 2013-04-03 パナソニック株式会社 半導体集積回路システム、半導体集積回路、オペレーティングシステム及び半導体集積回路の制御方法
US7467050B2 (en) * 2006-05-30 2008-12-16 International Business Machines Corporation Method for detecting noise events in systems with time variable operating points
US7607028B2 (en) * 2006-05-30 2009-10-20 International Business Machines Corporation Mitigate power supply noise response by throttling execution units based upon voltage sensing
KR100776751B1 (ko) * 2006-06-09 2007-11-19 주식회사 하이닉스반도체 전압 공급 장치 및 방법
JP2008072045A (ja) 2006-09-15 2008-03-27 Oki Electric Ind Co Ltd 半導体集積回路
JP5011944B2 (ja) * 2006-10-18 2012-08-29 セイコーエプソン株式会社 誤動作防止回路、半導体集積回路装置および電子機器
JP5011945B2 (ja) * 2006-10-18 2012-08-29 セイコーエプソン株式会社 半導体集積回路装置および電子機器
US7966447B2 (en) * 2007-07-06 2011-06-21 Hewlett-Packard Development Company, L.P. Systems and methods for determining refresh rate of memory based on RF activities
US7720621B2 (en) * 2007-08-30 2010-05-18 International Business Machines Corporation Application of multiple voltage droop detection
US7599808B2 (en) * 2007-08-31 2009-10-06 International Business Machines Corporation Application of multiple voltage droop detection and instruction throttling instances with customized thresholds across a semiconductor chip
US7818599B2 (en) * 2007-10-09 2010-10-19 International Business Machines Corporation Statistical switched capacitor droop sensor for application in power distribution noise mitigation
KR100974213B1 (ko) * 2008-08-12 2010-08-06 주식회사 하이닉스반도체 전원 잡음 검출 장치 및 이를 이용한 전원 잡음 제어 장치
JP5312227B2 (ja) * 2009-06-29 2013-10-09 株式会社日本マイクロニクス プローブカード及び検査装置
JP5750829B2 (ja) * 2010-03-19 2015-07-22 富士通セミコンダクター株式会社 半導体装置の試験方法
US9070776B2 (en) 2011-04-15 2015-06-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device and driving method thereof
KR101776329B1 (ko) * 2011-11-25 2017-09-08 현대자동차주식회사 접근권한코드를 이용한 디바이스 보호 시스템 및 그 보호 방법
KR101446762B1 (ko) 2013-06-26 2014-10-06 전재현 화장품 용기
KR101643456B1 (ko) * 2014-02-14 2016-07-28 주식회사 엘지생활건강 화장품 용기
KR102660729B1 (ko) 2016-10-28 2024-04-26 삼성전자주식회사 전원 잡음을 검출하는 불휘발성 메모리 장치 및 그것의 동작 방법

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2699755B1 (fr) * 1992-12-22 1995-03-10 Sgs Thomson Microelectronics Circuit de démarrage et de sécurité contre les coupures d'alimentation, pour circuit intégré.
JPH0973400A (ja) 1995-09-05 1997-03-18 Mitsubishi Electric Corp 半導体集積回路
JP3608361B2 (ja) 1997-12-26 2005-01-12 株式会社日立製作所 低ノイズ半導体集積回路装置
JP2001125690A (ja) * 1999-10-26 2001-05-11 Mitsubishi Electric Corp マイクロコンピュータの誤動作防止装置及びマイクロコンピュータの誤動作防止方法
IT1319820B1 (it) * 2000-01-28 2003-11-03 St Microelectronics Srl Circuito di reset di accensione a basso consumo per memorie asemiconduttore
JP3981234B2 (ja) * 2000-02-21 2007-09-26 松下電器産業株式会社 マイクロコンピュータ

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI408376B (zh) * 2008-12-05 2013-09-11 富士通股份有限公司 用於電壓變動量計算之方法與系統

Also Published As

Publication number Publication date
KR100691594B1 (ko) 2007-03-09
JP2002222919A (ja) 2002-08-09
JP4292720B2 (ja) 2009-07-08
US20020096677A1 (en) 2002-07-25
US7339411B2 (en) 2008-03-04
KR20020062791A (ko) 2002-07-31
US20060033559A1 (en) 2006-02-16

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