TW511163B - Manufacturing method of semiconductor device - Google Patents
Manufacturing method of semiconductor device Download PDFInfo
- Publication number
- TW511163B TW511163B TW090119543A TW90119543A TW511163B TW 511163 B TW511163 B TW 511163B TW 090119543 A TW090119543 A TW 090119543A TW 90119543 A TW90119543 A TW 90119543A TW 511163 B TW511163 B TW 511163B
- Authority
- TW
- Taiwan
- Prior art keywords
- semiconductor device
- manufacturing
- insulating film
- gas
- etching
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/01—Manufacture or treatment
- H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P70/00—Cleaning of wafers, substrates or parts of devices
- H10P70/20—Cleaning during device manufacture
- H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
- H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P50/00—Etching of wafers, substrates or parts of devices
- H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
- H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
- H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
- H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/031—Manufacture or treatment of conductive parts of the interconnections
- H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
- H10W20/071—Manufacture or treatment of dielectric parts thereof
- H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts
Landscapes
- Drying Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2001210149A JP2003023000A (ja) | 2001-07-11 | 2001-07-11 | 半導体装置の製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW511163B true TW511163B (en) | 2002-11-21 |
Family
ID=19045667
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW090119543A TW511163B (en) | 2001-07-11 | 2001-08-09 | Manufacturing method of semiconductor device |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US6645870B2 (https=) |
| JP (1) | JP2003023000A (https=) |
| KR (1) | KR100762524B1 (https=) |
| TW (1) | TW511163B (https=) |
Families Citing this family (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7157314B2 (en) | 1998-11-16 | 2007-01-02 | Sandisk Corporation | Vertically stacked field programmable nonvolatile memory and method of fabrication |
| US8575719B2 (en) | 2000-04-28 | 2013-11-05 | Sandisk 3D Llc | Silicon nitride antifuse for use in diode-antifuse memory arrays |
| US6951823B2 (en) * | 2001-05-14 | 2005-10-04 | Axcelis Technologies, Inc. | Plasma ashing process |
| US20040108573A1 (en) * | 2002-03-13 | 2004-06-10 | Matrix Semiconductor, Inc. | Use in semiconductor devices of dielectric antifuses grown on silicide |
| DE10226603A1 (de) * | 2002-06-14 | 2004-01-08 | Infineon Technologies Ag | Verfahren zum Strukturieren einer Siliziumschicht sowie dessen Verwendung zur Herstellung einer integrierten Halbleiterschaltung |
| JP2006351887A (ja) * | 2005-06-17 | 2006-12-28 | Hitachi High-Technologies Corp | プラズマ処理装置 |
| US7700492B2 (en) * | 2005-06-22 | 2010-04-20 | Tokyo Electron Limited | Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program |
| JP5179219B2 (ja) * | 2008-02-20 | 2013-04-10 | 東京エレクトロン株式会社 | 付着物除去方法及び基板処理方法 |
| KR20100046909A (ko) * | 2008-10-28 | 2010-05-07 | 주성엔지니어링(주) | 정전 흡착 장치와 그의 제조방법 |
| KR101496149B1 (ko) * | 2008-12-08 | 2015-02-26 | 삼성전자주식회사 | 결정질 실리콘 제조 방법 |
| JP4968861B2 (ja) | 2009-03-19 | 2012-07-04 | 東京エレクトロン株式会社 | 基板のエッチング方法及びシステム |
| JP2010272758A (ja) * | 2009-05-22 | 2010-12-02 | Hitachi High-Technologies Corp | 被エッチング材のプラズマエッチング方法 |
| JP2012114156A (ja) * | 2010-11-22 | 2012-06-14 | Ulvac Japan Ltd | 圧電素子の製造方法 |
| JP2013125796A (ja) * | 2011-12-13 | 2013-06-24 | Hitachi High-Technologies Corp | プラズマ処理方法および装置 |
| WO2014092856A1 (en) * | 2012-12-14 | 2014-06-19 | The Penn State Research Foundation | Ultra-high speed anisotropic reactive ion etching |
| US10002744B2 (en) * | 2013-12-17 | 2018-06-19 | Tokyo Electron Limited | System and method for controlling plasma density |
| US10395896B2 (en) | 2017-03-03 | 2019-08-27 | Applied Materials, Inc. | Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation |
| JP2019050305A (ja) * | 2017-09-11 | 2019-03-28 | 東芝メモリ株式会社 | プラズマエッチング方法、及び、半導体装置の製造方法 |
| US11195923B2 (en) * | 2018-12-21 | 2021-12-07 | Applied Materials, Inc. | Method of fabricating a semiconductor device having reduced contact resistance |
| US10593518B1 (en) * | 2019-02-08 | 2020-03-17 | Applied Materials, Inc. | Methods and apparatus for etching semiconductor structures |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5292393A (en) | 1986-12-19 | 1994-03-08 | Applied Materials, Inc. | Multichamber integrated process system |
| JPH04286115A (ja) | 1991-03-15 | 1992-10-12 | Fujitsu Ltd | 半導体装置の製造方法 |
| US6036878A (en) * | 1996-02-02 | 2000-03-14 | Applied Materials, Inc. | Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna |
| JPH11145282A (ja) * | 1997-11-06 | 1999-05-28 | Nec Corp | エッチング方法 |
| JPH11251294A (ja) * | 1998-02-27 | 1999-09-17 | Sony Corp | 半導体装置の製造方法 |
-
2001
- 2001-07-11 JP JP2001210149A patent/JP2003023000A/ja not_active Withdrawn
- 2001-08-02 KR KR1020010046814A patent/KR100762524B1/ko not_active Expired - Lifetime
- 2001-08-09 TW TW090119543A patent/TW511163B/zh not_active IP Right Cessation
- 2001-08-14 US US09/928,500 patent/US6645870B2/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| JP2003023000A (ja) | 2003-01-24 |
| US20030013313A1 (en) | 2003-01-16 |
| KR20030006872A (ko) | 2003-01-23 |
| US6645870B2 (en) | 2003-11-11 |
| KR100762524B1 (ko) | 2007-10-01 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |