KR100762524B1 - 반도체장치의 제조방법 - Google Patents

반도체장치의 제조방법 Download PDF

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Publication number
KR100762524B1
KR100762524B1 KR1020010046814A KR20010046814A KR100762524B1 KR 100762524 B1 KR100762524 B1 KR 100762524B1 KR 1020010046814 A KR1020010046814 A KR 1020010046814A KR 20010046814 A KR20010046814 A KR 20010046814A KR 100762524 B1 KR100762524 B1 KR 100762524B1
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KR
South Korea
Prior art keywords
etching
insulating film
gas
delete delete
semiconductor
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Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
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KR1020010046814A
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English (en)
Korean (ko)
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KR20030006872A (ko
Inventor
네기시노부유키
이자와마사루
Original Assignee
가부시키가이샤 히타치세이사쿠쇼
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Publication of KR20030006872A publication Critical patent/KR20030006872A/ko
Application granted granted Critical
Publication of KR100762524B1 publication Critical patent/KR100762524B1/ko
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/011—Manufacture or treatment of electrodes ohmically coupled to a semiconductor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/20—Cleaning during device manufacture
    • H10P70/23—Cleaning during device manufacture during, before or after processing of insulating materials
    • H10P70/234—Cleaning during device manufacture during, before or after processing of insulating materials the processing being the formation of vias or contact holes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/069—Manufacture or treatment of conductive parts of the interconnections by forming self-aligned vias or self-aligned contact plugs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/071—Manufacture or treatment of dielectric parts thereof
    • H10W20/081—Manufacture or treatment of dielectric parts thereof by forming openings in the dielectric parts

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  • Drying Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
KR1020010046814A 2001-07-11 2001-08-02 반도체장치의 제조방법 Expired - Lifetime KR100762524B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JPJP-P-2001-00210149 2001-07-11
JP2001210149A JP2003023000A (ja) 2001-07-11 2001-07-11 半導体装置の製造方法

Publications (2)

Publication Number Publication Date
KR20030006872A KR20030006872A (ko) 2003-01-23
KR100762524B1 true KR100762524B1 (ko) 2007-10-01

Family

ID=19045667

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020010046814A Expired - Lifetime KR100762524B1 (ko) 2001-07-11 2001-08-02 반도체장치의 제조방법

Country Status (4)

Country Link
US (1) US6645870B2 (https=)
JP (1) JP2003023000A (https=)
KR (1) KR100762524B1 (https=)
TW (1) TW511163B (https=)

Families Citing this family (20)

* Cited by examiner, † Cited by third party
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US7157314B2 (en) 1998-11-16 2007-01-02 Sandisk Corporation Vertically stacked field programmable nonvolatile memory and method of fabrication
US8575719B2 (en) 2000-04-28 2013-11-05 Sandisk 3D Llc Silicon nitride antifuse for use in diode-antifuse memory arrays
US6951823B2 (en) * 2001-05-14 2005-10-04 Axcelis Technologies, Inc. Plasma ashing process
US20040108573A1 (en) * 2002-03-13 2004-06-10 Matrix Semiconductor, Inc. Use in semiconductor devices of dielectric antifuses grown on silicide
DE10226603A1 (de) * 2002-06-14 2004-01-08 Infineon Technologies Ag Verfahren zum Strukturieren einer Siliziumschicht sowie dessen Verwendung zur Herstellung einer integrierten Halbleiterschaltung
JP2006351887A (ja) * 2005-06-17 2006-12-28 Hitachi High-Technologies Corp プラズマ処理装置
US7700492B2 (en) * 2005-06-22 2010-04-20 Tokyo Electron Limited Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program
JP5179219B2 (ja) * 2008-02-20 2013-04-10 東京エレクトロン株式会社 付着物除去方法及び基板処理方法
KR20100046909A (ko) * 2008-10-28 2010-05-07 주성엔지니어링(주) 정전 흡착 장치와 그의 제조방법
KR101496149B1 (ko) * 2008-12-08 2015-02-26 삼성전자주식회사 결정질 실리콘 제조 방법
JP4968861B2 (ja) 2009-03-19 2012-07-04 東京エレクトロン株式会社 基板のエッチング方法及びシステム
JP2010272758A (ja) * 2009-05-22 2010-12-02 Hitachi High-Technologies Corp 被エッチング材のプラズマエッチング方法
JP2012114156A (ja) * 2010-11-22 2012-06-14 Ulvac Japan Ltd 圧電素子の製造方法
JP2013125796A (ja) * 2011-12-13 2013-06-24 Hitachi High-Technologies Corp プラズマ処理方法および装置
WO2014092856A1 (en) * 2012-12-14 2014-06-19 The Penn State Research Foundation Ultra-high speed anisotropic reactive ion etching
US10002744B2 (en) * 2013-12-17 2018-06-19 Tokyo Electron Limited System and method for controlling plasma density
US10395896B2 (en) 2017-03-03 2019-08-27 Applied Materials, Inc. Method and apparatus for ion energy distribution manipulation for plasma processing chambers that allows ion energy boosting through amplitude modulation
JP2019050305A (ja) * 2017-09-11 2019-03-28 東芝メモリ株式会社 プラズマエッチング方法、及び、半導体装置の製造方法
US11195923B2 (en) * 2018-12-21 2021-12-07 Applied Materials, Inc. Method of fabricating a semiconductor device having reduced contact resistance
US10593518B1 (en) * 2019-02-08 2020-03-17 Applied Materials, Inc. Methods and apparatus for etching semiconductor structures

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11145282A (ja) * 1997-11-06 1999-05-28 Nec Corp エッチング方法
JPH11251294A (ja) * 1998-02-27 1999-09-17 Sony Corp 半導体装置の製造方法
US6036878A (en) * 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5292393A (en) 1986-12-19 1994-03-08 Applied Materials, Inc. Multichamber integrated process system
JPH04286115A (ja) 1991-03-15 1992-10-12 Fujitsu Ltd 半導体装置の製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6036878A (en) * 1996-02-02 2000-03-14 Applied Materials, Inc. Low density high frequency process for a parallel-plate electrode plasma reactor having an inductive antenna
JPH11145282A (ja) * 1997-11-06 1999-05-28 Nec Corp エッチング方法
JPH11251294A (ja) * 1998-02-27 1999-09-17 Sony Corp 半導体装置の製造方法

Also Published As

Publication number Publication date
JP2003023000A (ja) 2003-01-24
US20030013313A1 (en) 2003-01-16
KR20030006872A (ko) 2003-01-23
US6645870B2 (en) 2003-11-11
TW511163B (en) 2002-11-21

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