TW504749B - Liquid processing method and apparatus for processing object in treatment liquid - Google Patents
Liquid processing method and apparatus for processing object in treatment liquid Download PDFInfo
- Publication number
- TW504749B TW504749B TW89112721A TW89112721A TW504749B TW 504749 B TW504749 B TW 504749B TW 89112721 A TW89112721 A TW 89112721A TW 89112721 A TW89112721 A TW 89112721A TW 504749 B TW504749 B TW 504749B
- Authority
- TW
- Taiwan
- Prior art keywords
- liquid
- processing
- solution
- treatment
- removal
- Prior art date
Links
- 239000007788 liquid Substances 0.000 title claims abstract description 556
- 238000012545 processing Methods 0.000 title claims abstract description 331
- 238000003672 processing method Methods 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 claims abstract description 154
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 239000000243 solution Substances 0.000 claims description 250
- 230000008569 process Effects 0.000 claims description 131
- 230000007246 mechanism Effects 0.000 claims description 101
- 238000011049 filling Methods 0.000 claims description 36
- 239000012530 fluid Substances 0.000 claims description 34
- 239000000758 substrate Substances 0.000 claims description 31
- 230000001681 protective effect Effects 0.000 claims description 21
- 239000007921 spray Substances 0.000 claims description 18
- 238000002347 injection Methods 0.000 claims description 16
- 239000007924 injection Substances 0.000 claims description 16
- 238000012546 transfer Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 230000002079 cooperative effect Effects 0.000 claims description 10
- 230000009257 reactivity Effects 0.000 claims description 9
- 238000005507 spraying Methods 0.000 claims description 9
- 230000002829 reductive effect Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 230000000873 masking effect Effects 0.000 claims 1
- 239000000126 substance Substances 0.000 abstract description 201
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 83
- 235000012431 wafers Nutrition 0.000 description 251
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 219
- 229920000642 polymer Polymers 0.000 description 181
- 239000010408 film Substances 0.000 description 129
- 239000007789 gas Substances 0.000 description 81
- 239000003795 chemical substances by application Substances 0.000 description 55
- 239000003814 drug Substances 0.000 description 37
- 238000005406 washing Methods 0.000 description 34
- 238000006243 chemical reaction Methods 0.000 description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 23
- 239000010949 copper Substances 0.000 description 23
- 238000001035 drying Methods 0.000 description 23
- 229910052802 copper Inorganic materials 0.000 description 21
- 229920002120 photoresistant polymer Polymers 0.000 description 20
- 238000007789 sealing Methods 0.000 description 16
- 238000004140 cleaning Methods 0.000 description 13
- 238000010586 diagram Methods 0.000 description 12
- 239000002904 solvent Substances 0.000 description 11
- 238000001816 cooling Methods 0.000 description 10
- 239000003570 air Substances 0.000 description 9
- 230000000694 effects Effects 0.000 description 9
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 8
- 229940079593 drug Drugs 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 8
- 239000002184 metal Substances 0.000 description 8
- 239000013078 crystal Substances 0.000 description 7
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- 238000007254 oxidation reaction Methods 0.000 description 6
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 230000033228 biological regulation Effects 0.000 description 4
- 230000008878 coupling Effects 0.000 description 4
- 238000010168 coupling process Methods 0.000 description 4
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- 230000002093 peripheral effect Effects 0.000 description 4
- 238000007747 plating Methods 0.000 description 4
- 229920006254 polymer film Polymers 0.000 description 4
- 238000006116 polymerization reaction Methods 0.000 description 4
- 238000003825 pressing Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- 239000000376 reactant Substances 0.000 description 4
- 230000004044 response Effects 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000010129 solution processing Methods 0.000 description 4
- 238000003860 storage Methods 0.000 description 4
- 238000011068 loading method Methods 0.000 description 3
- 229910052704 radon Inorganic materials 0.000 description 3
- SYUHGPGVQRZVTB-UHFFFAOYSA-N radon atom Chemical compound [Rn] SYUHGPGVQRZVTB-UHFFFAOYSA-N 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 230000008602 contraction Effects 0.000 description 2
- 239000000498 cooling water Substances 0.000 description 2
- 238000005520 cutting process Methods 0.000 description 2
- 238000009713 electroplating Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- -1 ethyl ethyl Diol Chemical class 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 2
- 238000007654 immersion Methods 0.000 description 2
- 239000011261 inert gas Substances 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000006193 liquid solution Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000008520 organization Effects 0.000 description 2
- 238000013021 overheating Methods 0.000 description 2
- 230000036632 reaction speed Effects 0.000 description 2
- 239000003507 refrigerant Substances 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 241001584812 Acronicta impressa Species 0.000 description 1
- 101100517284 Caenorhabditis elegans nsun-1 gene Proteins 0.000 description 1
- 235000005206 Hibiscus Nutrition 0.000 description 1
- 235000007185 Hibiscus lunariifolius Nutrition 0.000 description 1
- 241001075721 Hibiscus trionum Species 0.000 description 1
- 101150064474 NOP58 gene Proteins 0.000 description 1
- 101150094081 Nol3 gene Proteins 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- YZCKVEUIGOORGS-NJFSPNSNSA-N Tritium Chemical compound [3H] YZCKVEUIGOORGS-NJFSPNSNSA-N 0.000 description 1
- 206010057362 Underdose Diseases 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- ZKJJMWRFUBITJD-UHFFFAOYSA-N [N].[Kr] Chemical compound [N].[Kr] ZKJJMWRFUBITJD-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229940121375 antifungal agent Drugs 0.000 description 1
- 239000003429 antifungal agent Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000012993 chemical processing Methods 0.000 description 1
- 239000012295 chemical reaction liquid Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000007598 dipping method Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010528 free radical solution polymerization reaction Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- ULYZAYCEDJDHCC-UHFFFAOYSA-N isopropyl chloride Chemical compound CC(C)Cl ULYZAYCEDJDHCC-UHFFFAOYSA-N 0.000 description 1
- 229910052743 krypton Inorganic materials 0.000 description 1
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 1
- 230000014759 maintenance of location Effects 0.000 description 1
- 150000007522 mineralic acids Chemical class 0.000 description 1
- 239000003595 mist Substances 0.000 description 1
- CLVOYFRAZKMSPF-UHFFFAOYSA-N n,n-dibutyl-4-chlorobenzenesulfonamide Chemical compound CCCCN(CCCC)S(=O)(=O)C1=CC=C(Cl)C=C1 CLVOYFRAZKMSPF-UHFFFAOYSA-N 0.000 description 1
- 101150111342 nol9 gene Proteins 0.000 description 1
- 150000007524 organic acids Chemical class 0.000 description 1
- 239000003960 organic solvent Substances 0.000 description 1
- 230000004792 oxidative damage Effects 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 210000000496 pancreas Anatomy 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000012805 post-processing Methods 0.000 description 1
- 238000009717 reactive processing Methods 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 230000002441 reversible effect Effects 0.000 description 1
- 238000005096 rolling process Methods 0.000 description 1
- 229910052701 rubidium Inorganic materials 0.000 description 1
- IGLNJRXAVVLDKE-UHFFFAOYSA-N rubidium atom Chemical compound [Rb] IGLNJRXAVVLDKE-UHFFFAOYSA-N 0.000 description 1
- 230000001568 sexual effect Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
- 239000012748 slip agent Substances 0.000 description 1
- 239000002002 slurry Substances 0.000 description 1
- 239000000779 smoke Substances 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 229920003051 synthetic elastomer Polymers 0.000 description 1
- 239000005061 synthetic rubber Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- 210000003437 trachea Anatomy 0.000 description 1
- 229910052722 tritium Inorganic materials 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000009834 vaporization Methods 0.000 description 1
- 230000008016 vaporization Effects 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/18—Stationary reactors having moving elements inside
- B01J19/1887—Stationary reactors having moving elements inside forming a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11184441A JP2001015480A (ja) | 1999-06-29 | 1999-06-29 | 基板の処理方法 |
| JP18419299 | 1999-06-29 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW504749B true TW504749B (en) | 2002-10-01 |
Family
ID=26502357
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW89112721A TW504749B (en) | 1999-06-29 | 2000-06-28 | Liquid processing method and apparatus for processing object in treatment liquid |
Country Status (3)
| Country | Link |
|---|---|
| KR (1) | KR20010039694A (ko) |
| DE (1) | DE10031605A1 (ko) |
| TW (1) | TW504749B (ko) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8793898B2 (en) | 2007-05-23 | 2014-08-05 | Semes Co., Ltd. | Apparatus and method for drying substrates |
| TWI491432B (zh) * | 2012-02-27 | 2015-07-11 | Tokyo Electron Ltd | 液體處理裝置及液體處理方法 |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100757850B1 (ko) * | 2006-06-22 | 2007-09-11 | 세메스 주식회사 | 기판 처리 방법 |
-
2000
- 2000-06-28 TW TW89112721A patent/TW504749B/zh not_active IP Right Cessation
- 2000-06-29 KR KR1020000036288A patent/KR20010039694A/ko not_active Application Discontinuation
- 2000-06-29 DE DE2000131605 patent/DE10031605A1/de not_active Ceased
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8793898B2 (en) | 2007-05-23 | 2014-08-05 | Semes Co., Ltd. | Apparatus and method for drying substrates |
| TWI490930B (zh) * | 2007-05-23 | 2015-07-01 | Semes Co Ltd | 乾燥基板的裝置及方法 |
| TWI491432B (zh) * | 2012-02-27 | 2015-07-11 | Tokyo Electron Ltd | 液體處理裝置及液體處理方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20010039694A (ko) | 2001-05-15 |
| DE10031605A1 (de) | 2001-02-22 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |