TW504749B - Liquid processing method and apparatus for processing object in treatment liquid - Google Patents
Liquid processing method and apparatus for processing object in treatment liquid Download PDFInfo
- Publication number
- TW504749B TW504749B TW89112721A TW89112721A TW504749B TW 504749 B TW504749 B TW 504749B TW 89112721 A TW89112721 A TW 89112721A TW 89112721 A TW89112721 A TW 89112721A TW 504749 B TW504749 B TW 504749B
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- TW
- Taiwan
- Prior art keywords
- liquid
- processing
- solution
- treatment
- removal
- Prior art date
Links
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Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/18—Stationary reactors having moving elements inside
- B01J19/1887—Stationary reactors having moving elements inside forming a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31127—Etching organic layers
- H01L21/31133—Etching organic layers by chemical means
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B05—SPRAYING OR ATOMISING IN GENERAL; APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C—APPARATUS FOR APPLYING FLUENT MATERIALS TO SURFACES, IN GENERAL
- B05C11/00—Component parts, details or accessories not specifically provided for in groups B05C1/00 - B05C9/00
- B05C11/02—Apparatus for spreading or distributing liquids or other fluent materials already applied to a surface ; Controlling means therefor; Control of the thickness of a coating by spreading or distributing liquids or other fluent materials already applied to the coated surface
- B05C11/08—Spreading liquid or other fluent material by manipulating the work, e.g. tilting
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Organic Chemistry (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Abstract
Description
504749 A7 五、發明說明（ 本發明所屬之技術領域： 本發明係有關於一種液處理方法及液處理裝置者，更 詳細而言，例如，對半導體晶圓或LCD用玻璃基板等之被 處理體供給處理液，例如為藥液或洗滌液等，而作洗淨等 之處理的液處理方法及液處理裝置者。 習知技藝： 一般，於半導體裝置之製造工程上，在半導體晶圓或 LCD用玻璃等之被處理體（以下，稱為晶圓等），例如，予 以成膜氧化膜（sicy、氮化膜（siN)或金屬膜（Cu)等之後， 就將抗蝕劑塗佈在晶圓等，其次，將所定之電路圖案作曝 光（光刻）之後，以顯像液作顯像且將其下面之氧化膜、氮 化膜、金屬膜等作乾蝕刻，然後，為去除抗蝕劑或蝕刻殘 渣（聚化物等），乃廣泛採用使用處理液之洗淨處理方法。 於此，處理液係指例如，有機溶劑或著有機酸等或無機酸 等之藥液與洗滌液。 素來對於此種之洗淨處理方法係予採用①如在美國專 利第4300581號明細書所記載，處理中乃在艙室内將晶圓 等放入於卡盒之狀態下而以一定之速度予以旋轉且將處理 液供給至液狀之噴霧式，或著，②將晶圓等予以浸潰在處 理液中而作洗淨處理之浸潰式。 但是，一般，於該種之洗淨處理方法上，如在第34圖 所示有對液體之流動有關之問題存在。在該圖上，處理液 ：>〇1乃供給予晶圓：>05之表面503上，且沿著晶圓505之表面 流動。於此狀態，液體507之速度乃因液體之粘性及液體 {請先閱讀背面之注意事項再填寫本頁} r---訂--- 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 4 504749 A7 B7 紙濟部智_,#財產局員工-消費合作社印製 五、發明說明（2 ) ”晶圓之摩檫而如在第34圖所示作分佈。因此，對晶圓等 所供給之處理液全體的流量之某一部份的接觸於晶圓表面 之極薄處理液層（反應層），於供予處理之後仍然會停留於 晶圓等之表面。由於此，使使用過之處理液與新處理液難 予置換，因此，會降低於晶圓等之表面上的化學反應，且 對處理上要^匕費較多時間之問題存在。並且，僅只以喷霧 供給，即由於反應層之處理液的替換難予引起，因此，亦 有處理液之使用量變成較多之問題存在。 另方面，近年來，在半導體積體電路裝置之製造工程 上，微細化技術之進展顯著，特別是，在作為基板之半導 體晶圓（以下，稱為「晶圓」）上，乃予要求將微細之配線 以高密度予以形成。因此，於配線材料方面乃予檢討比素 末之銘（A1)為低之電阻係數的銅（cu)，而使配線寬度變成 較細小亦可圖配線電阻之減低。又，以多層予以形成配線 之時，乃以低介電率之絕緣膜，即依所謂之1〇〜冰膜（低k 膜）而使配線互相作絕緣，乃使配線互相之間隔雖變成狹 小’亦不會使配線間靜電容量增加。如是，以防止因配線 而生之電氣信號的延遲，而以圖半導體積體電路裝置之高 速化、高積體化。 於此，對於習知之銅配線的製造工程，現參照第35a 圖至第35E圖作說明，即，在矽（Si)基板之晶圓（w)之表面 上，使銅膜201、SiN(氮化矽）膜202、低k膜203依序予以 成膜。該場合，SiN膜202乃作為障礙金屬膜之作用而予 防止銅膜201之氣化或銅之擴散。其首先，如在第μα圖 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） Μ--------^---------^ (請先閱讀背面之注意事項再填寫本頁) 504749 五、發明說明（ 所不，在該低k膜203上，依光蝕刻（光刻）技術予以形成蝕 刻屏罩用之光抗蝕膜2〇4。其次，如在第35B圖所示，將 光抗蝕膜204作為屏罩而對低!^膜2〇3進行乾蝕刻，予以形 成微細之接觸孔2〇5。該場合，欲能使微細之接觸孔2〇5對 於晶圓（W)之表面予以形成作為垂直形狀之開口部，乃沿 著接觸孔205之側壁予以形成側壁保護膜（聚合物膜）2〇6並 作蝕刻。其次，如在第35C圖所示，使用〇2氣體而進行依 電漿之電鍍處理且予去除光抗蝕膜2〇4之後，乃如在第35d 圖所示，對SiN膜202施予乾蝕刻。接著，如在第35E圖所 I I 訂 示，依藥液去除側壁保護膜206。依如上述之製造工程而 予形成所望之配線構造。 線 但是’於習知之製造工程，欲將光抗蝕膜204作電鍍 處理之時，依薄膜之SiN膜202乃無法保護銅膜201，而因 電漿而生之不良影響就會波及銅膜201，並會使銅膜2〇1氧 化等之損傷。如是之損傷將使配線電阻予以增加而成為使 半導體積體電路裝置之品質劣化之原因。 本發明之目的： 本發明係鑑於上述課題而所進行者，乃欲提供可圖處 理效率之提升以及處理液之使用量的削減之液處理方法及 液處理裝置，作為目的。 又，本發明係欲提供於製造金屬配線、特別是，銅配 線之時，不會產生損傷之液處理方法為目的。 解決課題之本發明的方法及裝置： 本發明之第1特徵係在於具有對被處理體供給處理液 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 504749 五、發明說明（4 ) 之工程、將處理液予以接觸於被處理體之表面、予以去除 接觸在上述被處理體之表面的處理液之工程，且將上述接 觸工程與去除工程依序反覆予以進行。 本發明之第2特徵係在於處理液去除工程乃於使用在 作被處理體表面之處理的處理液之反應性，比未反應之處 理液的反應性為低之時，就要從被處理體之表面予以去除 處理液之工程。 又，本發明之第3特徵係在於具有對被處理體供給處 理液且使處理液予以接觸在被處理體之表面的工程，以及 將處理液予以噴射於上述被處理體之表面，且將接觸在被 處理體之表面的處理液予以置換為新處理液之工程，並將 上述工私依序反覆進行。 由於此，由於將處理液供給於被處理體且將處理液予 以接觸在被處理體表面之工程，以及將接觸在被處理體之 表面的處理液予以去除之工程，依序反覆予以進行，就能 將接觸於被處理體表面而作化學反應且使反應性變成㈣ (反應速度變成較為遲緩）之使用過的處理液，可予以頻繁 置換為新處理液。由於此，可圖處理效率之提升之同時， 亦能依較少之處理液而予進行所望之液處理。 本發明之第4特徵係在於可相對性予以㈣被處理體 與將處理液噴射於該被處理體之表面的處理液噴射機構， 而使接觸在被處理體之表面的處理液予以置換為新處理 液由於此，肖b將處理液之去除以迅速且確實予以進行， 而且可圖處理效率之提升。 •本紙張尺涵财關撕（CNS)A4規格—χ挪公髮 504749504749 A7 V. Description of the invention (Technical field to which the present invention pertains: The present invention relates to a liquid processing method and a liquid processing device, and more specifically, for example, a processed object such as a semiconductor wafer or a glass substrate for an LCD Those who supply processing liquids, such as chemical liquids or washing liquids, and liquid processing methods and liquid processing devices for cleaning, etc. Know-how: Generally, in semiconductor device manufacturing processes, on semiconductor wafers or LCDs After using an object to be processed (such as a wafer, etc.), for example, after forming an oxide film (sicy, nitride film (siN), or metal film (Cu)), a resist is applied on Wafers, etc. Next, after the predetermined circuit pattern is exposed (lithography), development is performed with a developing solution and the oxide film, nitride film, metal film, etc. under it are dry-etched. Etching agents or etching residues (polymers, etc.) are widely used for cleaning treatment methods using a treatment liquid. Here, the treatment liquid refers to, for example, an organic solvent or a chemical liquid and a cleaning liquid containing an organic acid or an inorganic acid. Always for This cleaning treatment method is adopted. ① As described in the US Patent No. 4300581 detailed description, during processing, wafers and the like are placed in a cassette in a cabin and rotated at a certain speed and the The treatment liquid is supplied to a liquid spray type, or ② an immersion type in which wafers and the like are immersed in the processing liquid for cleaning treatment. However, in general, for such a cleaning treatment method, such as There are problems with the flow of the liquid as shown in Figure 34. In this figure, the processing liquid: > 〇1 is provided to the wafer: > 05 on the surface 503 and along the surface of the wafer 505 Flow. In this state, the speed of liquid 507 is due to the viscosity of the liquid and the liquid {please read the precautions on the back before filling this page} r --- Order --- Printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 504749 A7 B7 纸 济 部 智 _, # Printed by the property bureau employee-consumer cooperative. V. Invention Description (2) "Wafer of the wafer is distributed as shown in Figure 34. Therefore, the supply of wafers, etc. A part of the entire flow of the processing liquid is in contact with the wafer surface The ultra-thin processing liquid layer (reaction layer) will remain on the surface of the wafer, etc. after it is supplied for processing. Because this makes it difficult to replace the used processing liquid with the new processing liquid, it will be reduced to the wafer There is a problem of chemical reaction on the surface, and it takes more time to process. Moreover, it is only supplied by spray, that is, it is difficult to cause the replacement of the treatment liquid of the reaction layer. Therefore, there is also a treatment liquid. On the other hand, in recent years, in the manufacturing process of semiconductor integrated circuit devices, miniaturization technology has made significant progress. In particular, semiconductor wafers (hereinafter referred to as " "Wafer"), it is required to form fine wiring with high density. Therefore, in terms of wiring materials, the copper (cu) with a lower resistivity than the elementary end inscription (A1) is reviewed to make the wiring The smaller width can reduce the wiring resistance. In addition, when wiring is formed in multiple layers, the wiring is insulated from each other with an insulating film with a low dielectric constant, that is, a so-called 10 to ice film (low-k film), so that the distance between the wirings is narrow. 'It will not increase the capacitance of the wiring room. If so, in order to prevent the delay of the electrical signal due to the wiring, the speed of the semiconductor integrated circuit device is increased and the integration is increased. Here, the manufacturing process of the conventional copper wiring will be described with reference to FIGS. 35a to 35E. That is, on the surface of a wafer (w) of a silicon (Si) substrate, a copper film 201, SiN (nitrogen) Siliconized silicon) film 202 and low-k film 203 are sequentially formed. In this case, the SiN film 202 functions as a barrier metal film to prevent vaporization of the copper film 201 or diffusion of copper. First of all, if the paper size of the μα chart is in accordance with Chinese National Standard (CNS) A4 (210 X 297 mm) Μ -------- ^ --------- ^ (please first Read the notes on the back side and fill in this page again) 504749 V. Description of the invention (No, on this low-k film 203, a photoresist film 204 for etching a mask is formed by photolithography (lithography) technology. Next, as shown in FIG. 35B, the low-resistance film 203 is dry-etched using the photoresist film 204 as a mask to form fine contact holes 205. In this case, it is necessary to make fine contact holes 205. The contact hole 205 is formed as a vertical opening on the surface of the wafer (W), and a side wall protective film (polymer film) 206 is formed along the side wall of the contact hole 205 and etched. Second, such as As shown in FIG. 35C, after performing a plasma-based electroplating treatment using O 2 gas and removing the photoresist film 204, the SiN film 202 is dry-etched as shown in FIG. 35d. Then, as shown in FIG. 35C, Ordered in Figure II of Figure 35E, the side wall protective film 206 is removed in accordance with the chemical solution. The desired wiring structure is formed according to the manufacturing process described above. It is' in the conventional manufacturing process, when the photoresist film 204 is to be electroplated, the SiN film 202 of the thin film cannot protect the copper film 201, and the adverse effects caused by the plasma will spread to the copper film 201, In addition, the copper film may be damaged by oxidation, such as oxidation. If the damage is caused, the wiring resistance is increased and the quality of the semiconductor integrated circuit device is deteriorated. Objects of the present invention: The present invention is made in view of the above problems. The purpose is to provide a liquid processing method and a liquid processing device capable of improving the processing efficiency and reducing the use amount of the processing liquid. The present invention is also intended to provide metal wiring, especially copper wiring. The method and device of the present invention for solving the problem: The first feature of the present invention is that it has a supply of the processing liquid to the object to be treated. The paper size applies the Chinese National Standard (CNS) A4 standard. (210 x 297 mm) 504749 V. Description of the invention (4) The process of contacting the treatment liquid with the surface of the object to be treated and removing the contact with the object to be treated The surface treatment liquid is processed, and the above-mentioned contacting process and removal process are sequentially performed repeatedly. The second feature of the present invention is that the treatment liquid removal process is based on the reactivity of the treatment liquid used on the surface of the object to be treated. When the reactivity is lower than that of the unreacted treatment liquid, the process of removing the treatment liquid from the surface of the object to be treated is provided. A third feature of the present invention is that the treatment liquid is supplied to the object to be treated and the A process in which the processing liquid is brought into contact with the surface of the object to be processed, and a process in which the processing liquid is sprayed on the surface of the above-mentioned object to be processed, and the processing liquid in contact with the surface of the object to be processed is replaced with a new processing liquid, and The above-mentioned labor and private affairs proceeded in sequence. Because of this, since the process of supplying the treatment liquid to the object to be treated, and contacting the treatment liquid with the surface of the object to be treated, and the process of removing the treatment liquid contacting the surface of the object to be treated, are carried out repeatedly, The used treatment liquid that can make a chemical reaction by contacting the surface of the object to be treated and whose reactivity becomes ㈣ (the reaction rate becomes relatively slow) can be frequently replaced with a new treatment liquid. Because of this, while improving the processing efficiency, the desired liquid treatment can also be performed with less processing liquid. The fourth feature of the present invention is that the treatment object and the treatment solution ejection mechanism that ejects the treatment solution onto the surface of the treatment object can be relatively replaced, so that the treatment solution contacting the surface of the treatment object is replaced with a new one. Because of this, Xiao b removes the processing liquid quickly and surely, and can improve the processing efficiency. • This paper ruler Hansai Caiguan tear (CNS) A4 specifications-χ Norwegian public hair 504749
經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
本發明之第5特徵係在於去除處理液之工程乃予停止 處理液之供給而^進行。由於此，能使處理液之使用量予 以減少。 本發明之第6特徵係在於將工程依序反覆進行之時， 乃將同一之處理液予以供給至上述被處理體。由於此，能 作同一處理液之接觸與去除之反覆，乃能使在被處理體表 面上之同一反應的反應速度予以快速。 本發明之第7特徵係在於將被處理體予以旋轉且予供 給處理液於該被處理體，而將處理液予以接觸在被處理體 之表面由於此，能將處理液以均一予以接觸在被處理體 之表面。 本發明之第8特徵係在於將處理液作溫度調整於所定 溫度之後始予供給。由於此，乃將處理液作溫度調整為所 定溫度，即，能予防止於處理中之處理液變成為處理上最 適宜之溫度以下。 本發明之第9特徵係在於將被處理體予以旋轉並予去 除接觸在遠被處理體之表面的處理液。由於此，能將接觸 在該被處理體之表面的處理液以均一予以去除。 本發明之第10特徵係在於被處理體表面上之處理液乃 依突然予以減少（降低）被處理體之旋轉速度而予去除。 本發明之第11特徵係在於使欲予去除處理液之時的被 處理體之旋轉速度乃比將處理液予以接觸於被處理體之時 的被處理體之旋轉速度為而速旋轉。由於此，其遠心力（離 心力）變成較大乃能使被處理體表面上之處理液的去除為A fifth feature of the present invention is that the process of removing the treatment liquid is performed by stopping the supply of the treatment liquid. Due to this, it is possible to reduce the use amount of the treatment liquid. The sixth feature of the present invention is that when the process is performed sequentially and repeatedly, the same treatment liquid is supplied to the object to be processed. Because of this, the contact and removal of the same treatment liquid can be repeated, and the reaction speed of the same reaction on the surface of the object to be treated can be made fast. The seventh feature of the present invention is that the processing object is rotated and the processing liquid is supplied to the processing object, and the processing liquid is contacted on the surface of the processing object. Because of this, the processing liquid can be uniformly contacted on the surface Treat the surface of the body. An eighth feature of the present invention is that the processing liquid is supplied after the temperature is adjusted to a predetermined temperature. Because of this, the temperature of the processing liquid is adjusted to a predetermined temperature, that is, it is possible to prevent the processing liquid during processing from becoming below the optimal temperature for processing. A ninth feature of the present invention resides in that the object to be processed is rotated and the processing liquid contacting the surface of the object to be treated is removed. Because of this, the treatment liquid contacting the surface of the object to be treated can be uniformly removed. The tenth feature of the present invention is that the treatment liquid on the surface of the object to be treated is suddenly reduced (decreased) by the rotation speed of the object to be removed. The eleventh feature of the present invention is that the rotation speed of the object to be treated when the treatment liquid is to be removed is made to be faster than the rotation speed of the object to be treated when the treatment liquid is brought into contact with the object. Because of this, its telecentric force (centrifugal force) becomes larger, which enables the removal of the treatment liquid on the surface of the object to be treated as
本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
五、發明說明（6 ) 較容易。 本發明之第12特徵係在於高速旋轉之時將予停止處理 液之供給。由於此，於高速旋轉之時，由於停止處理二之 供給’因此，能予減少處理液之使用量。 本發明之第13特徵係在於對被處理體之表面予以噴射 氣體而予去除接觸在該被處理體之表面的處理液。 I 本發明之第14特徵係在於將被處理體與對該被處理體 丨之表面噴射氣體之噴射機構以相對性予以移動，而予去除 接觸在被處理體之表面的處理液。 本發明之第1 5特徵係在於將氣體作溫度調整於所定溫 度之後始予噴射。 本發明之第16特徵係在於將接觸於被處理體之表面的 處理液依吸引而予去除。 本發明之第17特徵係在於將予以成膜在半導體製造之 多層配線工程上的基板之表面的多層膜之中的屏罩膜，及 予以形成在接觸孔壁之側壁保護膜，依反覆進行處理液之 接觸與去除而予去除。 MV濟部智皆財產局員工*消費合作社印製 本發明之第18特徵係在於半導體製造之多層配線工程 上，乃將予以形成在基板表面之多層膜中的屏罩膜之去 除，及予以形成在基板之接觸孔壁的側壁保護膜之去除， 將處理液供給予基板予以進行。於此，對於藥液，即可適 宜使用有機系列之藥液、無機系列之藥液等。 由於此，屏罩膜與側壁保護膜乃使用藥液予以去除， 因此，不必如素來需要將屏罩膜作乾蝕刻。是故，例如， 本紙張尺度適用中國@家標準（CNS)A4規格（21G X 297公釐)------- 504749Fifth, the description of the invention (6) is easier. The twelfth feature of the present invention is that the supply of the processing liquid is stopped when the high-speed rotation is performed. Because of this, at the time of high-speed rotation, the supply of the processing liquid can be reduced because the supply of the processing second is stopped '. A thirteenth feature of the present invention resides in that the surface of the object to be processed is sprayed with a gas to remove the processing liquid that is in contact with the surface of the object to be processed. The fourteenth feature of the present invention is that the object to be treated is moved relative to the ejection mechanism that ejects gas onto the surface of the object to be treated, and the processing liquid contacting the surface of the object is removed. The fifteenth feature of the present invention is that the gas is sprayed after the gas is adjusted to a predetermined temperature. A sixteenth feature of the present invention resides in that the treatment liquid contacting the surface of the object to be treated is removed by suction. A seventeenth feature of the present invention is that a mask film is formed in a multilayer film formed on a surface of a substrate on a multilayer wiring process for semiconductor manufacturing, and a side wall protective film is formed on a contact hole wall, and is processed repeatedly The liquid is removed by contact and removal. Employees of MV Jibe Jizhi Property Bureau * Consumer Cooperative printed the eighteenth feature of the present invention is the multilayer wiring project of semiconductor manufacturing, which removes the mask film formed in the multilayer film on the substrate surface and forms The removal of the protective film on the side wall of the contact hole wall of the substrate is performed by supplying the treatment liquid to the substrate. Here, for the medicinal solution, an organic series of medicinal solution and an inorganic series of medicinal solution can be suitably used. Because of this, the mask film and the side wall protective film are removed using a chemical solution, so it is not necessary to dry-etch the mask film as usual. That ’s why, for example, this paper size is applicable to China @ 家 standard (CNS) A4 specification (21G X 297 mm) ------- 504749
五、發明說明（ 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 予、成膜在基板之表面的多層膜之中有金屬膜之場合， p把予防止於進行乾蝕刻之時所發生的電漿對於該金屬 t有不良备，或著，因氧化而給予損傷之不良影響等。 斗寸別疋如疋之樂液係使用於製造銅配線之時，而喜愛使 用能予抑制因去除及氧化而生之不良影響者。 本毛月之第19特徵係在於反覆進行於基板之表面予以 接1处里液之工铨，以及予以去除接觸在基板之表面的處 理液之工程。 本毛明之第20特徵係在於使用同一處理液予以去除屏 罩膜與側壁保護膜。 由於此，其比使用其他藥液處理屏罩膜與側壁保護膜 之時，其處理乃成為較簡單。 本毛月之第2 1特徵係在於處理液有第1處理液與第2處 理液’且使用前述第1處理液予以去除屏罩膜，而使用前 述第2處理液去除側壁保護膜。依據該方法，即，於去除 屏罩膜之場合與去除側壁減敎場合，能？適宜分別使 用藥液，因此，可進行因應膜種之柔軟的處理。 本毛月之第22特徵係在於自基板之表面去除處理液之 fe乃使别述基板予以旋轉且依遠心力（離心力）使處理液 甩開而予去除。 本發明之帛23特徵係在於自基板之表面去除處理液之 工程乃將氣體噴射於前述基板之表面而予去除處理液。依 據該方法，即，可將反應後之藥液自基板有效之去除，而 予以噴射在基板之表面的氣體方面有乂氣體等。V. Description of the invention (when printed by a consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and formed into a metal film among the multilayer films on the surface of the substrate, p. Prevent the plasma generated during dry etching. The metal t is badly prepared, or has an adverse effect on damage due to oxidation, etc. Dou Cun Dou Ru Zhi Zhi Le is used in the manufacture of copper wiring, and it is favored to be used to suppress the generation due to removal and oxidation. The 19th feature of this Maoyue is the process of repeatedly applying a liquid to the surface of the substrate, and the process of removing the processing liquid contacting the surface of the substrate. The 20th feature of this Maoming The reason is to use the same treatment liquid to remove the mask film and the side wall protection film. Because of this, it is easier to handle than the case where the other mask liquid and the side wall protection film are treated. This 2nd of this month It is characterized in that the treatment liquid includes a first treatment liquid and a second treatment liquid ′, and the mask film is removed by using the first treatment liquid, and the side wall protective film is removed by using the second treatment liquid. This method, that is, in the case of removing the screen film and the case of removing the side wall, is suitable for using a chemical solution separately, and therefore, a soft treatment according to the film type can be performed. The 22nd feature of this hair month is from the substrate The surface removal of the processing liquid is to remove the substrate and to remove the processing liquid according to the telecentric force (centrifugal force). The twenty-third feature of the present invention is that the process of removing the processing liquid from the surface of the substrate is to remove gas. The treatment liquid is removed by spraying on the surface of the substrate. According to this method, the chemical liquid after the reaction can be effectively removed from the substrate, and radon gas can be sprayed on the surface of the substrate.
(請先閱讀背面之注意事項再填寫本頁) 訂i 線—i^w----- 504749(Please read the notes on the back before filling this page) Order i-line—i ^ w ----- 504749
Mt濟部智(#財產局員工消費合作社印製 五、發明說明（8 本發明之第24特徵係在於將予以成膜在半導體製造之 多層配線工程上的基板之表面的多層膜之中的屏罩膜，與 予以形成在接觸孔之壁的側壁保護膜，由於依反覆進行前 述處理液之接觸與前述處理液之噴射的置換予以去除。依 該方法，亦可經常使未反應之藥液予以供給在基板之表 面。 本發明之第25特徵係在於將屏罩膜與側壁保護膜於同 一處理室内予以去除。 本發明之第26特徵係在於將屏罩膜與側壁保護膜於相 異之處理室内予以去除。 本發明之第27特徵係在於具有欲予保持被處理體之保 持衣置、連接在處理液源之處理液供給口、欲予去除接觸 在上述被處理體表面之處理液的處理液去除機構、以及至 少亦予控制將供給上述處理液之應時（定時）與欲予去除處 理液之應時，應依序反覆予以進行之上述處理液供給裝置 的供給應時，以及上述處理液去除裝置之去除應時的控制— 裝置。 由於此’乃依序予以反覆進行將處理液供給予被處理 體且使處理液予以接觸在被處理體表面之工程，以及予以 去除接觸在被處理體之表面的處理液之工程，而能將接觸 於被處理體表面作化學反應且其反應性變成較弱（反應速 度變成遲緩）之使用過的處理液，頻繁置換為反應性強之 新處理液。 本發明之第28特徵係在於被處理體保持裝置乃具備使 _本紙張尺度_中關家標準（CNS)A4規格⑽x 297公楚） 11 I I I I I · I I (請先閱讀背面之注意事項再填寫本頁) 線. 504749 五、發明說明（9 經濟部智慧財產局員工消費合作社印製 A7 被處理體予以保持為旋轉可能之旋轉驅動裝置。 本發明之第29特徵係在於再具備自處理液供給口所供 給之處理液的溫度調整裝置。 本發明之第30特徵係在於處理液去除機構乃具備對被 處理體予以噴射氣體之氣體噴射噴嘴。 本發明之第31特徵係在於將被處理體保持裝置與氣體 喷射噴嘴予以形成為以相對性可作移動。 本發明之第32特徵係在於處理液去除機構乃具備被喷 射之氣體的溫度調整裝置。 ' 本發明之第33特徵係在於處理液去除機構乃具備對被 處理體欲予噴射處理液之處理液噴射噴嘴。 本發明之第34特徵係在於將被處理體保持裝置與處理 液噴射噴嘴予以形成為以相對性可作移動。 本發明之第35特徵係在於處理液去除機構乃具有所噴 射之處理液的溫度調節機構。 本發明之第36特徵係在於處理液去除機構乃具備欲予 吸引接觸在被處理體表面之處理液的處理液吸引噴嘴。 本發明之第37特徵係在於處理液去除機構乃具備予以 連接在被處理體保持裝置之同時，亦能予變化被處理體保 持裝置之旋轉速度的旋轉驅動裝置。 本發明之弟3 8特徵係在於控制裝置乃要控制被處理體 保持裝置之旋轉速度而使自被處理體之表面欲予去除處理 液之時的旋轉速度，比對被處理體之表面予以供給處理液 之時的旋轉速度為快速。 f請先閱讀背面之注意事項再填寫本頁}Mt 济 部 智 (#Property Bureau employee consumer cooperative printing 5. Invention description (8) The twenty-fourth feature of the present invention is the screen in a multilayer film that will be filmed on the surface of a substrate on a multilayer wiring process for semiconductor manufacturing The cover film and the side wall protection film formed on the wall of the contact hole are removed by repeatedly contacting the aforementioned treatment liquid and replacing the spray of the aforementioned treatment liquid. According to this method, the unreacted medicinal solution can also be frequently applied. It is supplied on the surface of the substrate. The twenty-fifth feature of the present invention is to remove the mask film and the side wall protective film in the same processing chamber. The twenty-sixth feature of the present invention is to treat the screen film and the side protective film in a different process. It is removed indoors. The twenty-seventh feature of the present invention is a treatment including a holding garment to hold the object to be treated, a treatment liquid supply port connected to the treatment liquid source, and a treatment to remove the treatment liquid contacting the surface of the object to be treated The liquid removal mechanism, and at least the timing (timing) of the supply of the above-mentioned processing liquid and the timing at which the processing liquid is to be removed, should be controlled in sequence. The supply of the above-mentioned processing liquid supply device is timely, and the above-mentioned control of the removal of the processing liquid removal device is based on the device. Because of this, the process liquid is sequentially supplied to the object to be treated and the processing liquid is brought into contact with the object to be processed. Projects on the surface of the body, and processes that remove the contact with the treatment liquid on the surface of the object to be treated, and used to make the chemical reaction on the surface of the object to be treated and its reactivity becomes weak (the reaction rate becomes slow) The processing liquid is frequently replaced with a new, highly reactive processing liquid. The twenty-eighth feature of the present invention is that the holding body of the processed object is provided with a _this paper standard_CNS Standard A4 (⑽297mm) 11 IIIII · II (please read the precautions on the back before filling this page) line. 504749 V. Description of the invention (9 Printed by A7 Consumers Cooperative of Intellectual Property Bureau of the Ministry of Economic Affairs A7 The object to be treated is a rotary drive device that can rotate. A twenty-ninth feature of the invention is further provided with a temperature adjustment device for the processing liquid supplied from the processing liquid supply port. A thirty-th feature of the present invention The treatment liquid removing mechanism is provided with a gas injection nozzle for injecting a gas to the object to be processed. A thirty-first feature of the present invention is that the object holding device and the gas injection nozzle are formed so as to be movable relative to each other. A thirty-second feature is that the processing liquid removing mechanism is provided with a temperature adjustment device of the ejected gas. A thirty-third feature is that the processing liquid removing mechanism is provided with a processing liquid spray nozzle that sprays the processing liquid to the subject. A thirty-fourth feature of the present invention is that the processing object holding device and a processing liquid spray nozzle are formed to be movable relative to each other. A thirty-fifth feature of the present invention is that the processing liquid removing mechanism has a temperature of the sprayed processing liquid. Adjusting mechanism. A thirty-sixth feature of the present invention resides in that the processing liquid removing mechanism is provided with a processing liquid suction nozzle for suctioning the processing liquid in contact with the surface of the object to be processed. A thirty-seventh feature of the present invention resides in that the processing liquid removing mechanism is provided with a rotation driving device capable of changing the rotation speed of the processing target holding device while being connected to the processing target holding device. The characteristic feature of the present invention is that the control device is to control the rotation speed of the holding body of the object to be processed, so that the rotation speed when the processing liquid is to be removed from the surface of the object to be processed is supplied to the surface of the object to be processed. The rotation speed at the time of processing the liquid is fast. fPlease read the notes on the back before filling in this page}
經濟部智襄財產局員工消費合作社印製 504749 五、發明說明（10 ) 本發明之實施態樣： 以下，將依據圖面而詳細說明本發明之實施態樣。於 該貫施態樣係針對將本發明應用於半導體晶圓之洗淨、乾 燥處理裝置之場合作說明。 而在以下之貫％恶樣上，晶圓之低速旋轉係予表示將 接觸在晶圓上之處理液，對以遠（離）心力予以甩開之時的 旋轉數作比較為低速之意義，相逆之，所謂之晶圓的高速 旋轉係所供給之處理液於晶圓上對能充分反應之程度的接 觸可此之旋轉數作比較為南速之意義，且停止乃作為低速 旋轉之一態樣而含於低速旋轉，於此場合亦對反應之促進 有所影響。又，欲自高速旋轉予以變化至低速旋轉之時， 予以插入急停止動作或急激之減速動作亦能予提升從晶圓 之除液功能。 又，使用過或著反應過，係指反應充分進行而其反應 性變低（反應速度變慢）之狀態，且新規或著未反應乃指未 進行反應而其反應性高之狀態，以及雖予進行反應，惟， 依過濾器等而回復至所望之反應性的狀態。 《第1實施態樣》： 第1圖係表示本發明有關之液處理裝置的第1實施態樣 之概略性構成圖。在第丨實施態樣上之液處理裝置係由將 被處理體之半導體晶圓（w)(以下，稱為晶圓（W))予以保持 為旋轉可能之保持機構的旋轉夾頭丨、欲使該旋轉夾頭1旋 轉驅動之旋轉驅動機構的馬達2、具備對由旋轉夾頭1所保 持之晶圓（W)的表面供給處理液，例如為抗蝕劑剝離液或 本紙張尺度適用中_家標準（CNS)A4規格（2ig x 297公爱） 裝-----^—訂---------線 (請先閱讀背面之注意事項再填寫本頁) 13 A7 B7 五、發明說明（11 ) 聚合物去除液等之藥 供給藥液之溶劑，例如為異給丙=广 供給機構）之處_# 烟供、給機構3B(IPA性氣體或清淨空氣等之 例如，氮氣陶等之不活 、寺之乾燥氣體（於圖面上乃表 合）的供給機構4(以下U不N:之场 冉為2供給機構4 )、以及至少亦 可控制供給處理 ^ T 制機槿5不 之應々（疋時）及去除處理液之應時的控 制機構5，予以構成里 成，、主要部門。於此所謂之藥液之溶劑 ” ：-έ與樂液起反應且盥並後之I#^ /、八俊之工矛王所使用之洗滌 a起反應之液體，而依該藥液之溶劑就能將附著在 晶圓:W:或艙室之藥液以粗略予以流洗者就可以。 °玄琢α在上述旋轉夾頭1及由該旋轉夾頭1所保持 晶圓㈤的周圍及其下部有配設杯子6，而由該杯子予以 防止樂液或ΙΡΑ飛散至外部。又，在杯子6之底部設有排 液口 7與排氣口 8。 上述處理液供給機構3乃予構成為依移動機構如可在 晶圓㈤之上方作水平移動’而且，由於要近接於晶圓（w) 之表面近傍’因此，垂直移動亦為可行，且在晶圓㈤之 上面具備供給（吐出）處理液，例如為藥液之藥液供給噴嘴 3a，而在連接該藥液供給喷嘴3a與藥液供給源扑之藥液供 、、’6盲路3 c，自樂液供給源3 b側依順序予以介設藥液供給泵 3d、過濾器3e、將藥液之溫度作溫度調整為所定溫度之 度控制3ί及開閉閥3g。而該場合，在藥液供給管路3c 開閉閥3g與藥液供給喷嘴3a之間，乃介著切換閥（未圖 而予連接未圖示之IPA供給源。 之 線 、、田 /JEL :之 示） 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐）Printed by the Employees' Cooperative of the Zhixiang Property Bureau of the Ministry of Economic Affairs 504749 V. Description of the Invention (10) Implementation of the invention: In the following, the implementation of the invention will be described in detail based on the drawings. This implementation example is a description of field cooperation for applying the present invention to a semiconductor wafer cleaning and drying processing apparatus. In terms of the following percentages, the low-speed rotation of the wafer indicates that the number of rotations when the processing liquid contacting the wafer is rotated away from the far (off) heart force is compared with the meaning of low speed. Conversely, the so-called high-speed rotation of the wafer is such that the contact of the processing liquid supplied on the wafer with sufficient response can be compared with the meaning of south speed, and the stop is a state of low-speed rotation. As such, it is involved in low-speed rotation, which also has an effect on the promotion of the reaction in this case. In addition, when changing from high-speed rotation to low-speed rotation, inserting an abrupt stop operation or an abrupt deceleration operation can also improve the liquid removal function from the wafer. Also, used or reacted refers to a state where the reaction proceeds sufficiently and its reactivity becomes slower (reaction rate becomes slower), and new regulations or unreacted refers to a state where its reactivity is not performed and its reactivity is high, and although The reaction proceeds, but returns to a desired reactive state by a filter or the like. "First embodiment": Fig. 1 is a schematic configuration diagram showing a first embodiment of a liquid processing apparatus according to the present invention. In the first embodiment, the liquid processing device is a rotary chuck that holds a semiconductor wafer (w) (hereinafter, referred to as a wafer (W)) of a processing object as a rotation holding mechanism. A motor 2 of a rotary driving mechanism for rotating the rotary chuck 1, and a processing liquid for supplying a surface of a wafer (W) held by the rotary chuck 1, for example, a resist stripping solution or a paper size application _Home Standard (CNS) A4 Specification (2ig x 297 Public Love) Pack ----- ^-Order --------- Line (Please read the precautions on the back before filling this page) 13 A7 B7 V. Explanation of the invention (11) Solvents for the supply of liquids such as polymer removal liquids, etc., such as isopropyl chloride = wide supply organization) _ # Smoke supply, supply organization 3B (IPA gas or clean air, etc.) , The supply mechanism 4 of the inert gas such as nitrogen pottery, the dry gas of the temple (the surface is shown on the drawing) (the following U and N: the field is 2 supply mechanism 4), and at least the supply process can also be controlled ^ T The control mechanism 5 for making the machine hibiscus 5 (time) and the time to remove the processing liquid is constituted as the main department. The so-called solvent of the medicinal solution ":-I # reacts with the music solution and I # ^ after washing and washing, a washing reaction liquid used by Bajun ’s work spear king, and the solvent of the medicinal solution can It is sufficient to wash the chemical solution attached to the wafer: W: or the chamber roughly. ° Xuanzhuo α is located around and below the rotary chuck 1 and the wafer 保持 held by the rotary chuck 1 and the lower part thereof. A cup 6 is provided, and the liquid is prevented from scattering to the outside by the cup. Furthermore, a drain port 7 and an exhaust port 8 are provided at the bottom of the cup 6. The processing liquid supply mechanism 3 is configured to move in accordance with the movement. If the mechanism can move horizontally above the wafer stack, and because it needs to be close to the surface of the wafer (w), vertical movement is also feasible, and a supply (discharge) of processing liquid is provided on the wafer stack. For example, the liquid medicine supply nozzle 3a of the liquid medicine, and the liquid medicine supply nozzle 3a connecting the liquid medicine supply nozzle 3a and the liquid medicine supply source, '6 blind path 3c, the side of the music liquid supply source 3b in order The liquid medicine supply pump 3d and the filter 3e are interposed, and the temperature of the liquid medicine is adjusted to a predetermined temperature. The degree control 3 and the on-off valve 3g. In this case, between the on-off valve 3g of the medicinal solution supply line 3c and the medicinal solution supply nozzle 3a, a switching valve (not shown but connected to an IPA supply source not shown) is connected. Line, Yada / JEL: Indication) This paper size is applicable to China National Standard (CNS) A4 (21〇X 297 mm)
I 14 五、發明說明（l2 ) ，队供給機構4乃由移動機構9b予以構成為可在晶 圓（W)之上方作水平移動及可作垂直移動，且在晶圓（w) 面八備供"Ό (噴射）N]軋體之N2氣體供給噴嘴4a，而在 連接該A氣體供給噴嘴乜與乂氣體供給源仆之乂氣體供 給官路4c，從\氣體供給源仆側依順序予以介設流量控制 為4d、過濾裔4e '開閉閥4f及將氣體之溫度作溫度調整為 定溫度之溫度調整機構的溫度控制器勉。而該場合，在 氣體供給管路4c之溫度控制器4g與A氣體供給噴嘴4a之 間乃’丨著切換閥（未圖示）而予連接未圖示之洗滌液，例 如為純水之供給源。 另方面，上述控制機構5，係由例如為，中央演算處 理裝置(CPU)所形成且予構成為，從該控制機構5(以，稱 為CPU 5)之控制信號可予以傳達至上述馬達2、藥液供給 噴嗔3a之移動機構9a及&氣體供給喷嘴4a之移動機構外等 之驅動系統、藥液供給機構3之供給泵3(1、溫度控制器玎 及開閉閥3g、N2氣體供給機構4之流量控制器4d、開閉閥 4f以及溫度控制器4g。 經濟部智•慧財產局員工-消費合作社印製 由於此，依從CPU 5之控制信號而使馬達2可切換為 所定之旋轉數，例如wl〜5〇〇[rpm]之低速旋轉與1〇〇〜 3000[卬m]之高速旋轉。該場合，低速旋轉之轉數與高速 旋轉之轉數的一部份有所重疊，但，對應於藥液之粘性而 予設定低速旋轉與高速旋轉，而於同一藥液之場合，低速 旋轉與咼速旋轉乃不會重疊（於以下之說明的場合亦為同 樣）。於此所謂之低速旋轉係將接觸在晶圓之藥液 504749 A7 五、發明說明（η ) 部 智 慧 員 工 消費 社 印 以離心力予以甩開之時的轉數作比較而為低速之意義，相 反之，高速旋轉乃使所供給之藥液於晶圓（w)上對於能充 分反應之程度為接觸可能之轉數作比較而為高速之意義。 又，依從CPU 5之控制信號而使藥液供給噴嘴3&或队 氣體供給噴嘴乜可在晶圓（W)之上方作水平移動且垂直移 動，即，對於晶圓（W)可作相對移動。並且，依從cPU 5 之控制信號而使所定量之藥液或乂氣體可供給予晶圓（w) 之構成。而雖未圖示，惟，對IPA之供給機構或純水之供 給機構亦同樣，從CPU 5之控制信號可傳達而使所定量之 IPA或純水可予以供給之構成。 其次，針對使用第1實施態樣之液處理裝置的液處 方法，現參照第1圖至第6圖予以說明。 首先，依未圖示之搬送機構而將晶圓予以搬送 旋轉夾頭1上，且將晶圓（W)保持在旋轉夾頭丨。而後， 淨夕動機構9a之驅動而將藥液供給噴嘴3a予以移動至晶， (w)之中。σ卩上方，且於泫狀態而依馬達2之驅動使旋轉 夾頭1及sa圓（W)以低速旋轉，例如以1〜5〇〇[卬爪]之轉數 作旋轉，同時，自藥液供給噴嘴3a吐出所定量之藥液（l)(例 如，聚合物去除液），且將該狀態進行數十秒間而使藥液（l) 予以接觸於晶圓表面{步驟夂丨（第丨次藥液供給工程；參照 第2A圖）}。由此，藥液（L)之聚合物去除液就起化學反應 而予溶融附著在晶圓表面之聚合物的一部份且予去除。而 予進行於兩溫之藥液處理的場合，即由依溫度控制器奵而 使藥液（L)之溫度予以調整為比最適宜處理溫度稍高 理 訂 至由圓 若 線 本紙張尺度適用中關家標準（CNS)A4規格（210 X 297公爱）' 504749 A7I 14 V. Description of the invention (l2), the team supply mechanism 4 is constituted by the moving mechanism 9b so that it can be moved horizontally and vertically above the wafer (W), and is prepared on the wafer (w) side Supply " Ό (injection) N] N2 gas supply nozzle 4a of the rolling body, and the gas supply line 4c connecting the A gas supply nozzle 供给 and the 乂 gas supply source server, in order from the gas supply source server side A temperature controller including a flow control 4d, a filter 4e ′, an on-off valve 4f, and a temperature adjustment mechanism that adjusts the temperature of the gas to a constant temperature is provided. In this case, a switching valve (not shown) is connected between the temperature controller 4g of the gas supply line 4c and the A gas supply nozzle 4a to connect a washing liquid (not shown), for example, the supply of pure water. source. On the other hand, the control mechanism 5 is formed by, for example, a central processing unit (CPU) and is configured so that a control signal from the control mechanism 5 (referred to as a CPU 5) can be transmitted to the motor 2 The drive system of the moving mechanism 9a of the chemical liquid supply nozzle 3a and the moving mechanism outside the & gas supply nozzle 4a, the supply pump 3 of the chemical liquid supply mechanism 3 (1, the temperature controller 玎 and the on-off valve 3g, N2 gas The flow controller 4d, the on-off valve 4f, and the temperature controller 4g of the supply mechanism 4. Printed by the employee-consumer cooperative of the Intellectual Property Management Bureau of the Ministry of Economic Affairs Because of this, the motor 2 can be switched to a predetermined rotation according to the control signal of the CPU 5. For example, the low-speed rotation of wl ~ 500 [rpm] and the high-speed rotation of 100 ~ 3000 [该 m]. In this case, the number of revolutions of low-speed rotation and the number of revolutions of high-speed rotation overlap. However, the low-speed rotation and the high-speed rotation are set according to the viscosity of the medicinal solution, and in the case of the same medicinal solution, the low-speed rotation and the high-speed rotation do not overlap (the same applies to the case described below). Low speed rotation system will come into contact Wafer solution 504749 A7 V. Description of the invention (η) The wisdom employee consumer agency printed the centrifugal force to compare the number of revolutions at the time of low speed. On the contrary, high-speed rotation makes the supplied solution On the wafer (w), it is of high speed to compare the degree of full contact with the number of possible rotations. In addition, the chemical liquid supply nozzle 3 & or the team gas supply nozzle is not allowed according to the control signal of the CPU 5. Move horizontally and vertically above the wafer (W), that is, the wafer (W) can be moved relative to each other. In addition, according to the cPU 5 control signal, the amount of medicinal solution or tritium gas can be provided to the crystal The structure of circle (w). Although not shown, the same applies to the IPA supply mechanism or pure water supply mechanism, and the control signal from the CPU 5 can be transmitted so that a fixed amount of IPA or pure water can be supplied. Next, a liquid processing method using the liquid processing apparatus according to the first embodiment will be described with reference to FIGS. 1 to 6. First, a wafer is transferred by a transfer mechanism (not shown) to a rotary chuck. 1 on, and the wafer W) is held in the rotating chuck 丨. Then, the cleaning mechanism 9a is driven to move the liquid medicine supply nozzle 3a into the crystal, (w). Above σ 卩, and driven by the motor 2 in the 泫 state The rotary chuck 1 and the sa circle (W) are rotated at a low speed, for example, at a rotation number of 1 to 5000 [5claws], and at the same time, a predetermined amount of the medicinal solution (l) is discharged from the medicinal solution supply nozzle 3a ( For example, polymer removal liquid), and this state is performed for several tens of seconds so that the chemical liquid (l) is brought into contact with the wafer surface {step 夂 (the first chemical liquid supply process; refer to FIG. 2A)}. In this way, the polymer removal liquid of the chemical solution (L) is chemically reacted to pre-melt and remove a part of the polymer adhered to the wafer surface. In the case of two-temperature chemical liquid treatment, the temperature of the chemical liquid (L) is adjusted to be slightly higher than the optimal processing temperature according to the temperature controller 至, and it is adjusted to the size of the paper of the round line. Guan Jia Standard (CNS) A4 Specification (210 X 297 Public Love) '504749 A7
訂 k 504749 A7Order k 504749 A7
訂 > IOrder > I
k Ik I
504749 A7504749 A7
504749504749
經濟部智慧財產局員工消費合作社印製Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
適用。 《第2實施態樣》： 第7A至第7D圖係、表示於本發明之液處理方法的第^ 施態樣上之藥液供給卫程及藥液去除工程之概略性側面 圖。第8圖係表示於第2實施態樣上之藥液供給及藥液去除 工程之步驟的流程圖。而於第2實施態樣上之構成要素， 乃與在第1圖所示之上述第！實施態樣為同樣，因此，其說 明將予省略。 μ 第2實施態樣係以圖藥液（L)之供給·去除處理的迅速 化之不予彳〒止藥液之供給而可作藥液之去除的場 合。即，於第2實施態樣，乃如在第7A至第8圖所示，首 先，乃與第1實施態樣同樣，依移動機構9a之驅動而將藥 液供給噴嘴3a予以移動而晶圓（w)之中心部上方，且於此 狀態而依馬達2之驅動使旋轉夾頭丨及晶圓（w)以低速旋 轉，例如，以1〜5〇〇[rpm]之轉數作旋轉之同時，自藥液 供給喷嘴3a吐出所定量之藥液（L)(例如，聚合物去除液）， 並於此狀態進行數十粆鐘而將藥液予以接觸在晶圓表 面{步驟8-1(第1次藥液供給工程；參照第7八圖）}。 其次，繼續維持藥液（L)之吐出而將旋轉夾頭丨及晶圓 (W)以高速旋轉，例如以100〜3000[卬m]之轉數予以旋轉， 而使停留在晶圓表面之處理過（使用過）之藥液（L)依離心 力予以思開且予飛散至外方而予去除{步驟8-2(第1次藥液 去除工程；第7B圖參照）}。此場合，由於作為保持機構之 旋轉夾頭1會旋轉，因而構成藥液去除機構。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）Be applicable. "Second embodiment": Figures 7A to 7D are schematic side views of the chemical solution supply process and the chemical solution removal process shown in the ^ th embodiment of the liquid processing method of the present invention. Fig. 8 is a flowchart showing the steps of the chemical liquid supply and chemical liquid removal process in the second embodiment. The constituent elements in the second embodiment are the same as those shown in the first figure! The implementation is the same, so its explanation will be omitted. μ In the second embodiment, the chemical solution (L) is supplied and removed quickly, and the chemical solution can be removed without stopping the supply of the chemical solution. That is, in the second embodiment, as shown in FIGS. 7A to 8, first, as in the first embodiment, the liquid medicine supply nozzle 3 a is moved by the driving of the moving mechanism 9 a and the wafer is moved. (W) is above the center part, and in this state, the rotating chuck and the wafer (w) are rotated at a low speed according to the driving of the motor 2. At the same time, a predetermined amount of chemical liquid (L) (for example, polymer removal liquid) is discharged from the chemical liquid supply nozzle 3a, and in this state, the chemical liquid is brought into contact with the wafer surface {step 8-1 (The first chemical liquid supply project; refer to Figures 7 and 8)}. Secondly, continue to maintain the discharge of the chemical solution (L) and rotate the rotary chuck 丨 and the wafer (W) at a high speed, for example, at a rotation speed of 100 to 3000 [卬 m], so that the The treated (used) medicinal solution (L) is opened by centrifugal force and scattered to the outside to be removed {Step 8-2 (the first medicinal solution removal process; refer to Fig. 7B)}. In this case, since the rotary chuck 1 as a holding mechanism rotates, a medicinal solution removing mechanism is constituted. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm)
20 504749 五、發明說明（I8 ) 將上述樂液m與藥液去除工程如在第7C圖、 第7D圖所示予以反覆進行{步驟8_3、步驟叫以下，同 樣予以反覆進行喊（數次至數千次）㈣終了藥液供給· 去除處理{步驟Li)、步驟8_2n}。而予作成適宜調整 於藥液供給工程㈣液去除工程上之藥液的供給量亦可 以。例如’由於將於藥液去除I料之藥液（L)的供給量 比於藥液供給工程上之藥液(L)的供給量為少，即能使藥 液（L)之使用量予以減少。 μ /以如上it，將附著纟晶圓表面之聚合物予以去除之 後’與上述第1實施態樣同樣，依序將IPA之供給工程與心 去除工程反㈣行所定次數（數:欠至數千次⑽進行心供 給·去除處理，然後，㈣水^以供給於晶圓表面進行洗 條處理之後，冑晶圓表面Μ供給&氣體，以進行乾燥 處m是繼續進行藥液（L)之吐出之狀態而予旋轉晶 圓（w)，且於甩開處理過（使用過）（反應過）之液體之時， 予以維持為所定溫度之藥液（L)因會維持晶圓（w)之周圍的 經濟部智-慧財產局員工•消費合作社印製 空間之溫度，因此，亦能予抑制晶圓本身之溫度下降，乃 能使藥液處理有效進行。 而在第2實施態樣，由於其他部份與上述第1實施態樣 同樣乃予省略其說明。 《第3實施態樣》： 第9A圖至第9D圖係表示於本發明之液處理方法的第3 實施態樣上之藥液供給工程及藥液去除工程之概略性側面 圖。第10圖係表示於第3實施態樣上之藥液供給及藥液去 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公釐 504749 A7 五、發明說明（l9 ) 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 除工程之步驟的流程圖。 第3實施態樣係使用氣體予以去除藥液之場合。該場 合，依未圖示之保持機構，例如，在使晶圓表面予以保持 為垂直狀態之晶圓（W)的上方兩側’予以配設將形成為藥 液供給機構3A之一部份的藥液供給喷嘴3a，且將在晶圓（w) 之兩側外方予以形成為藥液去除機構3c之一部份的氣體， 例如為N2氣體之喷射噴嘴3h，予以配設為對於晶圓表面 可作平行移動（水平及垂直移動）。而藥液供給噴嘴3&，例 如，以噴射噴嘴予以形成而藥液之供給形態乃與上述第！ 實施態樣之藥液供給機構3A為同樣之構成。又，％氣體 噴射噴嘴3h，例如，以具有細縫狀之噴孔的閘刀噴嘴予以 形成，而A氣體氣體之供給形態即予構成為與上述第1實 施態樣上之&氣體供給機構4同樣。從以如是所形成之問 刀噴嘴3h所噴射之N2氣體，乃能以良好效率去除沿著晶 圓（W)之表面的晶圓表面之極薄的處理液層（反應層）。 其次’對於第3實施態樣上之藥液供給處理與藥液去 除處理，將參照第9A至第10圖予以說明。 首先，從藥液供給喷嘴3a將所定量之藥液（L)以噴霧 狀予以供給且使藥液（L)接觸在晶圓表面{步驟ίο](第“欠 藥液供給工程；第9A圖參照）}。接著，予以停止藥液（乙） 之供給’且將A氣體噴射喷嘴3h對著晶圓（w)予以作平行 移動（水平及垂直移動），並從N2氣體噴射噴嘴补向著晶圓 (W)予以供給（噴射）&氣體，而予去除停留在晶圓表面之 處理過後（使用過）之藥液{步驟10-2(第1次藥液去除工程； 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂· — -線----U——..1-----·——一----- 22 DU4/4^ A7 B7 五、發明說明（2〇 局 費 第9B圖參照）}。 將上述藥液供給卫程與藥液去除工程如在㈣圖、 第9D圖所示予以反覆{步驟1〇_3、 樣反覆進行# (數次至數十”而ς驟10-七，以下，以同 至數十-人）而予終了藥液供給·去除 處理{步驟10-(2η-1)、步驟1〇-2η}。 / f如上述’將附著在晶圓表面之聚合物予以去除之 後，就使用上述藥液供給喷嘴3a_氣體喷射嗜嘴儿而血 ^述弟1實施態樣同樣，將1PA供給工程與心去除工程依 序反覆進行所定次數丨赵+ 5 ^ 數（數-人至數千次），以進行IPA供給. =理’其次’對晶®表面Μ供給純水㈣行洗蔣處 之後，就對晶圓表面供給n2氣體而進行乾燥處理。該 场合1使用於藥液去除所使用之乂氣體噴射噴嘴料 以進行晶圓（W)之乾燥處理，即，可圖構成構件之削減 同時亦可圖裝置之小型化。 而於上述說明乃針對將晶圓（w)予以保持為垂直 態’以進行藥液供給、藥液去除處理—IPA供給.IPA去 除處理—洗«理—乾職理之場合作說明，m上 ^第1實施態樣《，將晶圓（w)予以保持為水平狀態之 情形下亦同樣能作處理。該場合，對於％氣體喷射喷嘴 I替代閘刀喷嘴亦能予使用乾燥處理用之化氣體供給 嘴4a(麥照第丨圖）。而在第3實施態樣上，其他之部份乃 上述第1實施態樣為同樣，因此，就予省略其說明。 反覆進行上述第3實施態樣上之藥液供給（接觸）工 與因Nj體之切而作之#液去除且η試钱刻速 〔A/mm〕之結果’丨比將晶圓予以浸潰在藥液作處理之 之 狀 噴 與 程 率 本紙張尺涵用票準（CNS)A4^(2i〇 χ挪公髮Γ20 504749 V. Description of the invention (I8) Repeat the above-mentioned music liquid m and medicinal liquid removal process as shown in Figures 7C and 7D {Steps 8_3, the steps are called below, the same should be repeated (several times Thousands of times) The chemical solution supply and removal process is ended {step Li), step 8_2n}. Alternatively, it is also possible to make a suitable adjustment of the supply amount of the chemical solution in the chemical solution supply process and the liquid solution removal process. For example, 'Because the supply amount of the medicinal solution (L) from which the I liquid is to be removed is smaller than the supply amount of the medicinal solution (L) in the medicinal solution supply process, the amount of the medicinal solution (L) can be used. cut back. μ / As above, after removing the polymer attached to the surface of the wafer, 'the same as the first embodiment described above, the IPA supply process and the heart removal process are reversed in a predetermined number of times (number: owed to several) Thousands of times, the heart is supplied and removed, and then water is supplied to the wafer surface for strip washing. Then, the wafer surface M is supplied with & gas for drying. The m is to continue the chemical solution (L). The wafer (w) is rotated in the spit out state, and when the processed (used) (reacted) liquid is thrown away, the chemical solution (L) maintained at a predetermined temperature will maintain the wafer (w) ) The employees of the Intellectual Property Office of the Ministry of Economic Affairs and the Consumer Property Cooperative • The temperature of the printed space of the consumer cooperative can also suppress the temperature drop of the wafer itself, which can effectively perform the treatment of the chemical solution. In the second implementation aspect Since the other parts are the same as the first embodiment, the description is omitted. "Third embodiment": Figures 9A to 9D are shown on the third embodiment of the liquid processing method of the present invention. Of chemical liquid supply engineering and chemical liquid removing engineering Fig. 10 shows the liquid medicine supply and liquid medicine removal on the third embodiment, and the paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210 × 297 mm 504749 A7) V. Description of the invention ( l9) The flowchart of the steps of printing out the project by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. The third embodiment is the case where gas is used to remove the medicinal solution. In this case, the holding mechanism (not shown), for example, when using The wafer surface is kept on the upper sides of the wafer (W) in a vertical state, and a chemical liquid supply nozzle 3a to be formed as a part of the chemical liquid supply mechanism 3A is provided. The gas formed as part of the chemical liquid removing mechanism 3c on the outside of both sides, for example, the injection nozzle 3h of N2 gas, is arranged to allow parallel movement (horizontal and vertical movement) to the wafer surface. The supply nozzle 3 &, for example, is formed by a spray nozzle, and the chemical liquid supply form is the same as that of the above-mentioned chemical liquid supply mechanism 3A of the embodiment. The% gas injection nozzle 3h, for example, A gate knife nozzle with a slit-shaped spray hole is formed, and the supply form of the A gas gas is configured to be the same as that of the & gas supply mechanism 4 in the first embodiment described above. The N2 gas sprayed by the nozzle 3h can remove the extremely thin processing liquid layer (reaction layer) on the wafer surface along the surface of the wafer (W) with good efficiency. Secondly, for the medicine in the third embodiment The liquid supply process and the chemical solution removal process will be described with reference to Figs. 9A to 10. First, a predetermined amount of the chemical solution (L) is supplied in a spray form from the chemical solution supply nozzle 3a, and the chemical solution (L) is brought into contact. {Step ίο] on the surface of the wafer ("the under-dose liquid supply process; refer to Figure 9A)}. Next, stop the supply of the chemical solution (B) 'and move the A gas injection nozzle 3h to the wafer (w) in parallel (horizontal and vertical movement), and replenish the wafer (W) from the N2 gas injection nozzle. Supply (injection) & gas, and remove the chemical solution after treatment (used) remaining on the surface of the wafer {step 10-2 (the first chemical solution removal process; this paper size applies Chinese National Standard (CNS) ) A4 specification (21〇X 297 mm) (Please read the precautions on the back before filling this page) Order · —----- U —— .. 1 ----- · —— 一- --- 22 DU4 / 4 ^ A7 B7 V. Description of the invention (refer to Figure 9B of the 20 bureau fee)}. The above-mentioned liquid medicine supply process and the liquid medicine removal process are repeated as shown in the figure and Figure 9D. {Step 1〇_3 、 样 再 进行 进行 # (Several times to several tens) and Steps 10-seven, the following, the same as several tens-persons) to end the supply and removal of medicinal solution {Step 10- (2η -1), step 10-2n}. / F As described above, after removing the polymer adhering to the wafer surface, use the above-mentioned chemical liquid supply nozzle 3a_ ^ Student 1's implementation is the same. The 1PA supply project and the heart removal project are performed repeatedly for a predetermined number of times. 丨 Zhao + 5 ^ (number-person to thousands of times) for IPA supply. = 理 '第二 次' After the crystal surface M is supplied with pure water for washing, the wafer surface is supplied with n2 gas for drying treatment. In this case 1, the radon gas spray nozzle material used for chemical liquid removal is used for wafer (W) The drying process can reduce the number of components and reduce the size of the device. In the above description, the wafer (w) is kept in a vertical state to perform chemical liquid supply and chemical liquid removal processing— IPA Supply. IPA Removal Processing-Washing «Management-Field Cooperatives Explanation, the first implementation aspect of the above," can also be processed in the case where the wafer (w) is kept horizontal. The Occasionally, for the gas injection nozzle I instead of the gate knife nozzle, a chemical gas supply nozzle 4a for drying treatment can also be used (Mai Zhao, picture 丨). In the third embodiment, the other parts are the first one described above. The implementation is the same, so the description is omitted. The result of repeatedly performing the chemical liquid supply (contact) on the third embodiment described above and the #fluid removal due to the cutting of the Nj body and the η test money cutting speed [A / mm] were compared. Sprayed on the liquid solution and sprayed on the paper with a paper rule (CNS) A4 ^ (2i〇χ 诺 公 发 Γ
I 504749 A7 五、發明說明（21 經 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 場合，可獲得約3.4倍之蝕刻速率。 、手而此場合，僅將晶圓 予以浸潰在藥液而對於晶圓之表面予以接觸藥液之工程之 場合，乃將晶圓在藥液中浸潰數分鐘。相對之，反覆進行 將晶圓浸潰在藥液且使藥液予以接觸之工程，盘對著曰圓 予以喷射乂氣體而將藥液予以去除之μ之場合，Z 浸潰時間純切鐘㈣氣料射時間為數秒且進行反 覆次數為數十次。 《第4實施態樣》： 弟11A圖至第i 1D圖係表示於本發明之液處理方法 第4實施態樣上之藥液供給工程及藥液去除工程的概略 側面圖。第12圖係表示於第4實施態樣上之藥液供給及 液去除工程的步驟之流程圖。 第4實施態樣係使用氣體予以去除藥液之另一能斤 該場合，除使晶圓（W)之處理面予以保持= 作旋轉、以及形成為藥液去除機構之—部份的氣體，例如 將N2氣體之喷射噴嘴31予以配設為可在晶圓（W)之上方 水平移動之方面之外’乃與上述第3實施態樣為同樣 此，就予省略其說明。 在第4實施態樣上，於進行藥液供給及 合’即與上述第3實施態樣同樣，首先，從藥液供給喷la 以喷霧狀供給所定量之藥液⑹(例如，聚合物去除液）於 晶圓表面使藥液（L)予以接觸{步驟12](第卜欠藥液供 程；第11圖參照)}。其次’予以停止藥液（L)之供給且 氣體噴射噴嘴3i對著晶圓（w)予以作平行移動（水平及 的 性 藥 直 作 因 給工 將N， 垂直 1 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公髮f 504749 也濟部智1·財產局員工消費合作社印製 Α7 Β7 五、發明說明（22) 移動）而從N2氣體噴射噴嘴3i向著晶圓（W)予以噴射N，氣 體，並將停留在晶圓（W)上半部之領域（a)的表面之處理過 後（使用過）’即，充分進行聚合物去除（反應）而反應性變 為較弱（反應速度變為遲緩）之藥液（以下，稱為處理過後 一使用過之藥液）(L)予以去除{步驟12-2(第丨次藥液去除工 程；第11B圖參照）}。 將藥液（L)去除之後，將晶圓（w)予以旋轉18〇度且使 晶圓（W)之領域（B)位於上方{步驟12-3丨，並於此狀態從藥 液供給噴嘴3a而將新規藥液（L)，即，將未進行聚合物去 除（反應）而反應性較強之藥液（以下，稱為新規藥液）以噴 霧狀予以供給且使藥液（L)接觸於晶圓表面{步驟12-4(第2 次藥液供給工程；第11C圖參照）丨。其次，予以停止藥液（L) 之供給，且使A氣體噴射噴嘴3丨對著晶圓予以作平行 移動（水平及垂直移動）並從％氣體噴射噴嘴3丨向著晶圓（w) 予以噴射N2氣體，而予去除停留在晶圓（w)之領域的表 面之使用過的藥液（L){步驟12.5(第2次藥液去除工程；第 11D圖參照）}。將上述藥液供給工程與藥液去除工程依序 予以反覆η次（數次至數千次）而予終了藥液供給·去除處 理{步驟 12-(2η·1)、步驟 ΐ2·2η}。 如上述，將附著在晶圓表面之聚合物予以去除之後， 就使用上述藥液供給噴嘴3樓乂氣體嘴射喷嘴^，而與上 述第1實施態樣同樣，將IPA之供給工程與心去除工程依 序反覆進行所定次數（數次至數千次）之心供給.去除處 理其-人，將純水供給予晶圓表面以進行洗務處理之後， Μ氏張尺度適財0國家财(_CNS)A4規格⑽χ 297· 公釐） 裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 25 504749I 504749 A7 V. Description of the invention (21 Occasionally, an etching rate of 3.4 times can be obtained in the case of printing at an employee consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs. In this case, only the wafer is immersed in the chemical solution and the wafer is immersed. When the surface is contacted with the chemical solution, the wafer is immersed in the chemical solution for several minutes. In contrast, the process of dipping the wafer in the chemical solution and contacting the chemical solution is repeatedly performed. When μ is sprayed in a circle to remove the drug solution, the Z immersion time is purely cut, and the clock shot time is several seconds and the number of repetitions is dozens of times. "Fourth Implementation Aspect": Figure 11A Figures 1 to 1D are schematic side views showing the chemical liquid supply process and the chemical liquid removal process in the fourth embodiment of the liquid processing method of the present invention. Figure 12 is the chemical solution in the fourth embodiment. Flow chart of the steps of the supply and liquid removal process. The fourth embodiment is another example of the use of gas to remove the chemical solution. In this case, in addition to keeping the processing surface of the wafer (W) = rotating and forming Medicinal liquid removal mechanism Part of the gas, for example, the N2 gas injection nozzle 31 is arranged to be horizontally movable above the wafer (W) except that it is the same as the third embodiment described above, and its description is omitted. In the fourth embodiment, the chemical liquid is supplied and combined, that is, as in the third embodiment described above, first, a predetermined amount of the chemical liquid (e.g., polymerization) is supplied in a spray form from the chemical liquid supply spray la. Material removal liquid) contact the chemical liquid (L) on the surface of the wafer {step 12] (the second chemical liquid supply process; refer to Figure 11)}. Secondly, stop the supply of the chemical liquid (L) and eject the gas. The nozzle 3i is moved in parallel to the wafer (w) (horizontal and sexual medicines are produced directly to the worker by N, vertical 1) This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 public hair f 504749) Printed by the Ministry of Economic Affairs 1 · Property Bureau Consumer Cooperatives A7 B7 V. Description of the Invention (22) Move) N2 gas is sprayed from the N2 gas injection nozzle 3i toward the wafer (W), and will stay on the wafer (W ) After the surface of the upper part of the area (a) is treated (used) ', that is, sufficient Polymer solution (reaction) that has been removed (reacted) and the reaction becomes weaker (the reaction rate becomes slow) (hereinafter, referred to as the used chemical solution after treatment) (L) is removed {Step 12-2 (No.丨 Second chemical liquid removal process; refer to Figure 11B)}. After removing the chemical liquid (L), rotate the wafer (w) by 180 degrees and place the area (B) of the wafer (W) on the top {step 12-3 丨, and in this state, the new standard drug liquid (L) is supplied from the chemical liquid supply nozzle 3a, that is, the high-reactive drug liquid (hereinafter referred to as the new standard drug) without polymer removal (reaction). The liquid) is supplied in a spray form and the chemical liquid (L) is brought into contact with the wafer surface {step 12-4 (second chemical liquid supply process; refer to FIG. 11C) 丨. Next, stop the supply of the chemical solution (L), and move the A gas injection nozzle 3 丨 to the wafer in parallel (horizontal and vertical movement) and spray it from the% gas injection nozzle 3 丨 to the wafer (w). N2 gas to remove the used chemical solution (L) remaining on the surface of the area of the wafer (w) {step 12.5 (second chemical solution removal process; refer to FIG. 11D)}. The above-mentioned chemical liquid supply process and chemical liquid removal process are sequentially repeated n times (several times to several thousand times) to complete the chemical liquid supply and removal process {step 12- (2η · 1), step ΐ2 · 2η}. As described above, after removing the polymer adhering to the surface of the wafer, the above-mentioned chemical liquid supply nozzle 3rd floor is used, and the gas nozzle jet nozzle is used. As in the first embodiment, the IPA supply process and the heart are removed. The project is repeatedly supplied in a predetermined number of times (several times to thousands of times). After removing and treating the person, the pure water is supplied to the wafer surface for cleaning treatment. _CNS) A4 size ⑽χ 297 · mm) -------- Order --------- Line (Please read the precautions on the back before filling this page) 25 504749
B 經濟部智慧財產局員工消費合作社印製 五、發明說明（23) 對晶圓表面予以供給A氣體，以進行乾燥處理。該場合， 由於使&氣體之溫度維持於所定溫度，因此，不使晶圓 之表面溫度降低而能有效進行晶圓（w)之處理。而於第4 貫施態樣，其其餘之部份乃與上述第丨實施態樣同樣，因 此，就予省略說明。 《第5實施態樣》·· 第13A至第13D圖係表示於本發明之液處理方法的第5 貫靶怨樣上之藥液供給工程及藥液去除工程之概略性側面 圖。第14圖係表示於第5實施態樣上之藥液供給工程及藥 液去除工程的步驟之流程圖。 第5貝知恕樣係使用作為處理液之藥液予以去除反應 過（使用過）之藥液之同時，亦予置換為新規之藥液的場 合。該場合，將形成為藥液供給機構3 A之一部份的，例 如為上述第4實施態樣之藥液供給喷嘴3a，可算用作為形 成為藥液去除機構3c之一部份的藥液去除用之藥液去除用 之藥液供給噴嘴，且予構成為於藥液供給時乃使藥液（L) 之吐出量（吐出壓）予以較少（參照第13A圖、第13C圖）而於 藥液去除時即使藥液（L)之吐出量（吐出壓）為較多（參照第 13B圖、第13D圖）。 於第5實施態樣，予以進行藥液供給及藥液去除之場 合，即與上述第4實施態樣同樣，首先，從藥液供給噴嘴“ 以噴霧狀供給所定量之新規藥液（L)(例如為聚合物去除液） 而使藥液（L)予以接觸在晶圓表面{步驟丨1 (第1次藥液供 給工程；參照第13A圖）}。其次，使藥液（L)之供給量^ 釐 公 26 (請先閱讀背面之注意事項再填寫本頁) -----------------^ I i^w--------*--------------- 504749 A7B Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (23) Supply A gas to the wafer surface for drying. In this case, since the temperature of the & gas is maintained at a predetermined temperature, the wafer (w) can be efficiently processed without lowering the surface temperature of the wafer. In the fourth embodiment, the remaining parts are the same as those in the first embodiment, so the description is omitted. "Fifth Embodiment" Figs. 13A to 13D are schematic side views showing the chemical liquid supply process and the chemical liquid removal process on the fifth target of the liquid processing method of the present invention. Fig. 14 is a flowchart showing the steps of the chemical liquid supply process and the chemical liquid removal process in the fifth embodiment. The 5th Zhizhishu sample uses the chemical liquid as a treatment liquid to remove the reacted (used) chemical liquid, and also replaces it with the new standard chemical liquid. In this case, the chemical liquid supply nozzle 3a formed as part of the chemical liquid supply mechanism 3A, such as the fourth embodiment described above, can be counted as the chemical liquid formed as part of the chemical liquid removal mechanism 3c. Chemical solution supply nozzle for removal, and the chemical solution supply nozzle for removal is configured to reduce the discharge amount (discharge pressure) of the chemical solution (L) when the chemical solution is supplied (refer to FIGS. 13A and 13C). When the medicinal solution is removed, the ejection amount (discharge pressure) of the medicinal solution (L) is large (see Figs. 13B and 13D). In the fifth embodiment, in the case of supplying and removing the chemical solution, that is, as in the fourth embodiment described above, first, the new regulated chemical solution (L) is supplied in a spray form from the chemical solution supply nozzle. (For example, a polymer removal liquid) and the chemical liquid (L) is brought into contact with the wafer surface {step 丨 1 (the first chemical liquid supply process; refer to FIG. 13A)}. Second, the chemical liquid (L) Supply Amount ^ cm 26 (Please read the notes on the back before filling this page) ----------------- ^ I i ^ w -------- * --------------- 504749 A7
504749 A7 五、發明說明（25 ) 說明 經濟部智慧財產局員工消費合作社印製 於上述說明，係從與在上述第4實施態樣上之藥液去 除機構3e_2氣體喷射喷嘴3i為同樣之噴嘴予以噴射藥液 於晶圓表面而予去除供與處理之藥液，同時，予以置換為 新藥液亦可以。依據該方法，即，由於經常會供給新規藥 液於晶圓表面，因此，晶圓表面上之反應乃會經常予以活 性化。是故，亦會產生處理時間之縮短等的效果。 《第6實施態樣》： 第15圖係表示於本發明之第6實施態樣之液處理方法 上的藥液供給部及藥液去除部之要部的概略性透視圖。 16A圖及第16B圖係表示於第6實施態樣上之藥液供給工 與藥液去除工程之概略性側面圖。第17圖係表示於第6 施態樣上之藥液供給工程及藥液去除工程之步驟的流 圖。 第6實施態樣係依吸引而予去除供與處理之藥液的場 合。該場合，乃如在第15圖所示，在由旋轉夾頭丨所保持 之晶圓（W)的上方近傍予以配設構成為藥液去除機構^之 一部份的藥液吸引噴嘴3j，且對該藥液吸引噴嘴3j予以連 接未圖示之吸引裝置，例如為真空泵，而予構成為得依吸 引予以去除於晶圓表面所供給之供與處理之藥液（l)。 於第6實施態樣，欲予進行藥液供給及藥液去除之場 合’乃與上述第1實施態樣同樣，首先，從藥液供給喷嘴^ 吐出（供給）所定量之藥液（L)(例如為聚合物去除液）， 時，使晶圓（W)予以旋轉且使藥液（L)予以接觸在晶圓表 第 程 程 同 面 (請先閱讀背面之注意事項再填寫本頁) ‘紙張尺度適用中國國家標準（CNS)A4規格（21〇 x 297公釐 I I I l· I I I ·11111111 I — — — — — — — — — — — — — — — — — — — — — — 504749504749 A7 V. Description of the invention (25) The description of the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is printed on the above description. The chemical liquid is sprayed on the surface of the wafer to remove the chemical liquid supplied and processed, and at the same time, it can be replaced with a new chemical liquid. According to this method, since the new regulation liquid is often supplied to the wafer surface, the reactions on the wafer surface are often activated. Therefore, the effect of shortening the processing time is also produced. "Sixth embodiment": Fig. 15 is a schematic perspective view showing the main parts of the chemical solution supply section and the chemical solution removal section in the liquid processing method according to the sixth embodiment of the present invention. Figures 16A and 16B are schematic side views showing the medicinal solution supplying process and the medicinal solution removing process in the sixth embodiment. Fig. 17 is a flowchart showing the steps of the medicinal solution supplying process and the medicinal solution removing process on the sixth application aspect. The sixth embodiment is a case where the medicinal solution for treatment is removed by suction. In this case, as shown in FIG. 15, a chemical liquid suction nozzle 3j configured as a part of the chemical liquid removing mechanism ^ is arranged near the wafer (W) held by the rotary chuck 丨, The chemical liquid suction nozzle 3j is connected to a suction device (not shown), such as a vacuum pump, and is configured to remove the chemical liquid (l) supplied and processed on the wafer surface by suction. In the sixth embodiment, when a medicinal solution is to be supplied and removed, it is the same as the first embodiment. First, the medicinal solution (L) is discharged (supply) from the medicinal solution supply nozzle ^. (For example, polymer removal liquid), when the wafer (W) is rotated and the chemical liquid (L) is contacted on the same side of the wafer table (please read the precautions on the back before filling this page) 'The paper size applies the Chinese National Standard (CNS) A4 specification (21 × 297 mm III l · III · 11111111 I — — — — — — — — — — — — — — — — — — — 504749
艮濟部智象財產局員工湞費合作社印製 {步驟mm次藥液供給工程；第16A圖參照)}。其次， 於，晶圓（w)予以旋轉之狀態ή停止藥液（L)之供給，且 使樂液吸引噴嘴3j予以動作（運作），而將停留在晶圓表面 之反應性較為薄弱的處理過後（使用過）之藥液（L)以吸引 予以去除{步驟17-2(第1次藥液去除工程；第〗6B圖彖 照）卜 ^ 其後，將上述藥液供給工程與藥液去除工程依序予以 反覆進行η次（數次至數千次）而予終了藥液供給與去除處 理{步驟 17·3、步驟 17-4······步驟 17-(2η·1)、步驟 17_2η}。 如上述，將附著在晶圓表面之聚合物予以去除之後， 就使用上述藥液供給噴嘴3a與藥液吸引噴嘴以，而與上述 第1實施態樣同樣，將IPA供給與去除處理予以進行。接 著，將純水供給於晶圓表面予以進行洗滌處理之後，將 氣體供給予晶圓表面予以進行乾燥處理。而將以如是所回 收之藥液能予再利用。而在第6實施態樣上，其其他部份 乃與上述第1實施態樣為同#，因此，其說明就予省略。 《第7實施態樣》： 第18圖係表示對本發明之第7實施態樣有關之液處理 裝置的概略性構成圖。第19圖係第7實施態樣之液處理裝 置的要部截面圖。125圖係液處理裝置之概略性平面圖。 第7實施態樣係為使多數之晶圓（w)同時作洗淨與乾燥處 理而在洗淨與乾燥處理系統予以組裝液處理裝置之場合。 上述洗淨與乾燥處理系統乃如在第25圖所示，係以欲 予搬入、搬出且將多數片之晶圓（w)，例如為25片，予以 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公爱）'Printed by the staff of the Intellectual Property Bureau of the Ministry of Genji at the expense of the cooperative {step mm times of medicinal solution supply project; refer to Figure 16A)}. Secondly, the wafer (w) is rotated to stop the supply of the medicinal solution (L), and the liquid liquid attracts the nozzle 3j to operate (operate), and the reaction that stays on the wafer surface is relatively weak. After (used) the medicinal solution (L) is removed by suction {Step 17-2 (the first medicinal solution removal process; photo 6B)) ^ After that, the above medicinal solution is supplied to the project and the medicinal solution The removal process is repeated η times (several times to thousands of times) in order to complete the supply and removal of the chemical solution {step 17 · 3, step 17-4 ······ step 17- (2η · 1) Step 17_2η}. As described above, after the polymer adhering to the wafer surface is removed, the chemical liquid supply nozzle 3a and the chemical liquid suction nozzle are used, and the IPA supply and removal processing is performed in the same manner as in the first embodiment. Next, after supplying pure water to the wafer surface for washing treatment, gas is supplied to the wafer surface for drying treatment. The recovered liquid can be reused. In the sixth embodiment, the other parts are the same as those in the first embodiment, so the description is omitted. "Seventh embodiment": Fig. 18 is a schematic configuration diagram showing a liquid processing apparatus according to a seventh embodiment of the present invention. Fig. 19 is a sectional view of a main part of a liquid processing apparatus according to a seventh embodiment. Figure 125 is a schematic plan view of a liquid processing apparatus. The seventh embodiment is a case where a liquid processing device is assembled in a cleaning and drying processing system so that a plurality of wafers (w) are simultaneously washed and dried. The above-mentioned washing and drying processing system is shown in FIG. 25, which is based on wafers (w) that are intended to be moved in and out, for example, 25 wafers. The Chinese standard (CNS) is applied to this paper size. A4 specifications (21〇X 297 public love) '
--------------裝i (請先閱讀背面之注意事項再填寫本頁) -線· 504749 A7-------------- Install i (Please read the precautions on the back before filling this page)-line · 504749 A7
五、發明說明（27 ) 經濟部智慧財產局員工消費合作社印制衣 收納為垂直狀態之容器，例如為托架61〇之用的搬入·搬 出部620、將晶圓（W)作液處理之同時亦作乾燥處理之處 理部630、位於搬入·搬出部62〇與處理部63〇之間而予施 受晶圓（W)且予進行位置調整及姿勢變換等之介面部 640，為其主要構成。而在搬入·搬出部62〇與介面部 之側方，有配設欲予暫時收納空托架61〇之用的托架庫 650 ’以及清洗托架61〇用之托架洗淨器66〇。 上述搬入·搬出部620係予配置在洗淨·乾燥處理裝 置之一側端部，且予併設托架搬入部621及托架搬出部 622。 於上述介面部640有配置托架載置台670,而於該托架 載置台670與搬入·搬出部62〇之間，有配設將從托架搬入 部621所收取之托架（載置架）61〇予以搬送至托架載置台 670上或托架庫650，且將托架載置台670上之托架610予以 搬送至托架搬出部622或托架庫650之用的托架搬送機構 680。又，於介面部640設有與處理部630相連之搬送路線 690 ’而於該搬送路線690上有配設可自由移動之晶圓搬送 機構，例如為晶圓搬送夾頭1〇。該晶圓搬送夾頭10乃從托 架載置台670上之托架610内接受未處理之晶圓（W)之後， 就予搬送至處理部630且可將於處理部630所處理之處理完 了的晶圓（W)予以搬入至托架610内之構成。 另方面，在上述處理部630乃予配設欲予去除附著在 晶圓（W)之抗蝕劑或聚化物等的本發明有關之液處理裝置 20(以下，稱為處理裝置2〇)。以下，針對本發明有關之處 (請先間讀背面之注意事項再填寫本頁) 0 訂---------線！ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 30 五、發明說明（28) 理裝置作詳細說明。 。上、iC處理衣置20乃如在第1 8圖所示，係以欲予保持晶 圓（W)為疑轉可能之保持機構，例如為轉動體、欲使該 轉動體21予以旋轉驅動之旋轉驅動機構之馬達u、予以包 圍：轉動體21所保持之晶圓(w)的多數之，例如為2個: 至（第1處理至、第2處理室）内艙室23與外餘室對於 "玄等内艙至23或外艙室24内所收容之晶圓（w)予以供給處 理流體，例如為抗姓劑剝離液、聚合物去除液等之藥液二 供給機構5G，與該藥液之溶劑，例如為異丙醇（IPA)之供 給機構60 ’洗滌液’例如為純水之供給機構(洗滌液供給 機構）70，或著，例如為氮氣（乂）等之不活性氣體或清淨 空氣等之乾燥氣體之供給機構8〇、以及將構成内艙室以 内筒體25與構成外艙室24之外筒體％分別予以切換且移動 於晶圓（W)之包圍位置及從晶圓（W)之包圍位置離開之等 待位置的移動機構，例如為第丨、第2圓筒27、Μ及從上述 晶圓搬送夾頭10接受晶圓（w)並交給轉動體21之同時，亦 從轉動體2】接受而交給晶圓夾頭1()(參照妨圖）之被處理 體施受機構’例如為晶圓施受手臂29，為其主要部門之構 成。 於如上述所構成之處理裝置20的馬達22，乃由處理流 體之各供給機構50、60、70、80之供給部，而晶圓施受手 臂29等乃依控制機構，例如為中央演算處理裝置3〇(以下， 稱為CPU 30)所控制。 上述轉動體21乃以單方支撐狀予以連結在配設為水 504749 A7 五、發明說明（29) 經濟部智慧財產局員工消費合作社印製 之馬達22之驅動軸22a(參照第19圖），而予保持使晶圓（w) 之處理面為鉛直，且予形成為以水平軸作為中心而可作旋 轉。該場合，轉動體21係以具有介著聯軸器22b而對馬達22 之驅動軸22a所連結之旋轉軸21A的第丨旋轉板2u、與該 第1旋轉板21a所對峙之第2旋轉板21b、架設在第丨及第2旋 轉板21a、21b間之多數，例如為4支之固定保持棒3丨、欲 予壓住依予以列設在該等固定保持棒31之保持溝（未圖示） 所保持之晶圓（W)的上部而未圖示之閂鎖機構、以及依閂 鎖解除機構而予切換移動為壓制位置與非壓制位置之丨對 壓制棒32，所構成。又，轉動體21之旋轉軸21八乃介著軸 承33而予支撐在第丨固定壁34為旋轉可能，並依連接於第1 固疋壁側之軸承33的曲折密封35而使在馬達22側所發生之 微粒不會侵入於處理室内之構成（參照第丨9圖）。又，馬達 22乃予收納在連設於第！固定壁34之固定筒體允内。而馬 達22乃以事先予以記憶在cpu 3〇之程式為依據而可控制 為以選擇性反覆進行為所定之高速旋轉，例如為1〇〇〜 3000[卬m]，以及低速旋轉，例如由於此， 馬達由於可作數次之高速旋轉與低速旋轉之切換，因此， 乃有過熱之虞，是故，於馬達22乃設有抑制過熱之用的 部機構37(參照第1 8圖）。該冷卻機構37乃如在第丨8圖 不，係在馬達22之周圍作配管之循環式冷卻管37a，以 配設該冷卻管37a之一部份與冷卻水供給管371)之一部份 而將予以封入在冷卻管37a内之冷媒液作冷卻之熱交換 37c，所構成。該場合，冷媒液乃予使用萬一有所洩漏之 冷 所 及 器V. Description of the invention (27) The container of printed clothing stored by the employee's consumer cooperative in the Intellectual Property Bureau of the Ministry of Economic Affairs is stored in a vertical state container, such as the carry-in and carry-out unit 620 for the tray 61, and the wafer (W) for liquid processing. At the same time, the processing section 630, which is also dried, is located between the carrying-in and carrying-out section 62 and the processing section 63, and the mesial surface section 640 that receives the wafer (W) and performs position adjustment and posture change is the main part. Make up. On the side of the loading / unloading unit 62 and the interface portion, there is a rack storage 650 'for temporarily storing the empty rack 61 and a rack cleaner 66 for cleaning the rack 61. . The carrying-in and carrying-out section 620 is provided at one end portion of the washing and drying processing apparatus, and a rack carrying-in section 621 and a rack carrying-out section 622 are provided in parallel. A bracket mounting table 670 is disposed on the mesas portion 640, and between the bracket mounting table 670 and the loading / unloading section 62, a bracket (mounting bracket) received from the bracket loading section 621 is provided. ) 61. It is transferred to the bracket mounting table 670 or the bracket storage 650, and the bracket 610 on the bracket mounting table 670 is transferred to the bracket transfer section 622 or the bracket transfer mechanism for the bracket storage 650. 680. Further, a transfer path 690 'connected to the processing section 630 is provided on the mesas portion 640, and a freely movable wafer transfer mechanism is provided on the transfer path 690, for example, a wafer transfer chuck 10. After the wafer transfer chuck 10 receives unprocessed wafers (W) from the carrier 610 on the carrier mounting table 670, it is transferred to the processing unit 630 and the processing by the processing unit 630 can be completed. The wafer (W) is configured to be carried into the carrier 610. On the other hand, the processing unit 630 is provided with a liquid processing apparatus 20 (hereinafter, referred to as a processing apparatus 20) according to the present invention to remove the resist or polymer adhering to the wafer (W). In the following, for the relevant aspects of the present invention (please read the precautions on the back before filling this page) 0 Order --------- line! This paper size is in accordance with China National Standard (CNS) A4 (210 X 297 mm). 30 5. Description of the invention (28) The mechanical device will be described in detail. . The upper and iC processing clothes 20 are as shown in FIG. 18, and the holding mechanism is to hold the wafer (W) as a suspected turning mechanism, such as a rotating body, and the rotating body 21 is driven to rotate. The motor u of the rotation driving mechanism is surrounded by: most of the wafers (w) held by the rotating body 21 are, for example, two: to (the first processing to, the second processing chamber) the inner chamber 23 and the outer chamber. " The wafer (w) contained in the inner compartment to the 23 or the outer compartment 24 is supplied with a processing fluid, for example, a second liquid supply mechanism 5G, such as an anti-name agent peeling liquid, a polymer removing liquid, and the like. The solvent of the liquid is, for example, isopropyl alcohol (IPA) supply mechanism 60. The "washing liquid" is, for example, pure water supply mechanism (washing liquid supply mechanism) 70, or, for example, an inert gas such as nitrogen (krypton) or The supply mechanism 80 of dry gas such as clean air, and the inner cylinder 25 constituting the inner chamber and the outer cylinder% constituting the outer chamber 24 are switched and moved respectively to the surrounding position of the wafer (W) and from the wafer (W). W) The moving mechanism of the waiting position leaving the surrounding position, for example, 2 cylinders 27, M, and wafers (w) received from the wafer transfer chuck 10 and delivered to the rotating body 21, and also received from the rotating body 2] and delivered to the wafer chuck 1 () (refer to (Fig.) The object receiving mechanism 'for example' is a wafer receiving arm 29, which is the structure of its main department. The motor 22 of the processing device 20 configured as described above is provided by the supply unit of each supply mechanism 50, 60, 70, 80 of the processing fluid, and the wafer receiving arm 29 is based on the control mechanism, such as a central calculation processing device 30 (hereinafter referred to as CPU 30). The above-mentioned rotating body 21 is connected to the water distribution 504749 A7 in a unilateral supporting manner. V. Description of the invention (29) The drive shaft 22a (see FIG. 19) of the motor 22 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and The processing surface of the wafer (w) is held in a vertical position, and is formed so as to be rotatable around a horizontal axis. In this case, the rotating body 21 is a second rotating plate 2u having a rotating shaft 21A connected to the driving shaft 22a of the motor 22 via a coupling 22b, and a second rotating plate facing the first rotating plate 21a. 21b. Most of them are installed between the first and second rotating plates 21a and 21b, for example, four fixed holding rods 3 丨, and the holding grooves (not shown) are arranged in the fixed holding rods 31 if they are to be pressed. (Shown) A latch mechanism (not shown) on the upper part of the wafer (W) to be held, and a pair of pressing rods 32 that are switched to a pressed position and a non-pressed position according to the latch release mechanism. In addition, the rotating shaft 21 of the rotating body 21 is supported on the first fixed wall 34 via a bearing 33, and is rotatable. The zigzag seal 35 connected to the bearing 33 on the first fixed wall side is provided on the motor 22 side. A structure in which the generated particles do not enter the processing chamber (refer to FIG. 9). In addition, the motor 22 is housed in the second row! The fixed cylinder of the fixed wall 34 is allowed inside. The motor 22 is based on a program memorized in the CPU 30 in advance and can be controlled to rotate at a high speed determined by selective iteration, for example, 100 to 3000 [卬 m], and low speed rotation, for example because of this Since the motor can switch between high-speed rotation and low-speed rotation several times, there is a risk of overheating. Therefore, the motor 22 is provided with a mechanism 37 for suppressing overheating (see FIG. 18). The cooling mechanism 37 is a circulating cooling pipe 37a as a piping around the motor 22 as shown in FIG. 8 and is provided with a part of the cooling pipe 37a and a part of the cooling water supply pipe 371). The refrigerant liquid enclosed in the cooling pipe 37a is used for cooling heat exchange 37c. In this case, the refrigerant fluid should be used in case of leakage.
(請先閱讀背面之注意事項再填寫本頁) 訂---------線！ 也濟部智象財產局員工消費合作社印製 504749 A7 _____B7 五、發明說明（3〇) 日ττ ’亦不會使馬達2 2漏電之電氣絕緣性且熱傳導性良好之 液體，例如為乙基乙二醇。又，使該冷卻機構37可根據由 未圖示之溫度感測裔所檢測之信號而予動作乃依上述cpu • 30予以控制。該冷卻機構37並非必定為如上述之構造，而 月&予使用例如空冷式或著利用拍爾堤元件之電氣式等的任 意者。 另方面，處理室，例如，内艙室23(第i處理室），係 由第1固定壁34、與該第1固定壁34相對峙之第2固定壁38、 在該等第1固定壁34及第2固定壁38之間分別介著第1及第2 密封構件40a、40b而作耦合之内筒體25予以形成。則，内 筒體25乃由作為移動機構之第1汽筒27(參照第18圖）的伸 張動作，而與轉動體21 —起被移動至包圍晶圓（w)之位 置，並在與第1固定壁34之間就介著第1密封構件4〇a而被 密封之同時，且在與第2固定壁38之間就介著第2密封構件 40b而被密封之狀態下，予以形成内艙室23(第1處理室）（表 照第19圖及第23圖）。又，内筒體25乃予構成為可由第^气 筒27之收縮動作而被移動至固定筒體36之外周側位置（等 待位置）（參照第20圖，第21圖及第23圖）。該場合，内筒 體25之刖端開口部乃在與弟1固定壁34之間，就介著第1穷 封構件40a而予密封，且内筒體25之基端部乃介著周設在 固定筒體36之中間部的第3密封構件40c而予密封，以防止 殘存於内艙室23内之藥液的環境空氣洩漏至外部。 又’外搶室24(第2處理室），其在與被移動至等待位 置之内筒體25之間，乃以介在密封構件4〇b之第1固定壁 -------------裝---I l·---訂-------I (請先閱讀背面之注意事項再填寫本頁) 33 經濟部智慧財產局員工消費合作社印製 504749 A7 ---------— __ 五、發明說明（SI ) 34、第2固定壁38、以及在第2固定壁38與内筒_之間分 別介著第4及第5密封構件40d、4〇e而作耦合之外筒體“予 以形成。則，外筒體26乃依作為移動機構之第2汽筒“的 伸張動作而與轉動體21一起被移動至包圍晶圓（w)之位 f，且其與第2固定壁38之間乃介著第4密封構件偏而被 密封之同時，亦予介著位於内筒體25之前端部外方之第$ 密封構件40e而被密封之狀態下予以形成為外艙室μ(第） 處理室）（參照第23圖），且予構成為依第2汽筒28之收縮動 作而可予以移動至固定筒體36之外周側位置（等待位 置)(參照第20圖及第21圖）。該場合，於外筒體％與内筒 體2：)之基端部間乃予介在第5密封構件4〇e而予密封。由於 此，内艙室23之内側環境空氣與外艙室24之内側環境空 氣，乃相互以氣水密之狀態予以隔離，因此，兩艙室巧、 24内之& ^空氣不會混雜’乃能予防止因相異處理流體起 反應而生之交又污染。 而上述第丨至第5密封構件40a〜4〇e乃予裂著為在所密 封之對象物的-方可予以膨隆，例如，以在合成橡膠製: 中空墊圈内予以封入壓縮空氣之密封構件予以形成。 以如上述所構成之内筒體25與外筒體26均予形成為向 前端展開之錐形狀，且沿著在同一水平線上所對峙之第1 固定壁34、第2固定壁38及架設在裝置側壁39之相互為平 行之多數’例如為3支之導執（未圖示）而予裝設為滑動可 能，並予形成為依上述第！及第2之汽筒27、28的伸縮動作 而在同心上相互為出沒可能及重合可能。如是，由於將 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ,----1---------——訂·—I!線—^wi (請先閱讀背面之注意事項再填寫本頁) 34 504749 A7 B7 五、發明說明（32 筒體25及外筒體26予以形成為向一端展開之錐形狀，因 此於處理日可乃於内筒體25或於外筒體％内使轉動體Μ予 、疋軏之e寸所發生《氣流就以旋渦狀流動至展開(擴展) 側，乃能使内部之藥液等容易排出至擴展側。又，將内筒 體25與外筒體26予以構造為重疊成同一轴線狀，因此，能 使内同體25與外筒體26及内艙室23以及外搶室处設置空 間予以減少，乃可圖裝置之小型化。 ^述内筒體25及外筒體26乃以不銹鋼予以形成。又， 在内间肢25之外周面有形成，例如為四氟化聚乙稀等之斷 熱層，而依該斷熱層予以構成為可防止於内艙室23内供予 處理之藥液及藥液之蒸氣為冰冷。 另方面，於上述處理液供給機構之中，其藥液，例如， 聚合物去除液之供給機構50乃如在第丨8圖、第19圖及第Μ 圖所f，係具備予以裝設在内筒體25内之藥液供給噴嘴 W、藥液供給部52、介設於連接該藥液供給噴嘴51與藥液 供給部52之藥液供給管路53之幫浦54、過瀘、器&溫I控 制器56、以及開閉閥57。該場合，乃由藥液供給源、儲 存從該藥液供給源58所供給之新規藥液的藥液供給槽 52a、以及儲存供予處理之藥液的循環供給槽52b所構成， 而在兩藥液供給槽52a、52b，乃使第！排液管42予以連接 在設於上述内艙室23之擴展側部位的下部之第丨排液埠口 41，且於第丨排液管42乃介著未圖示之切換閥（切換機構） 而予連接循環管路90，並在内艙室23之擴展側部位的上 部，乃设有第1排氣埠口 43，而於第1排氣埠口 43有連接介 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐(Please read the notes on the back before filling this page) Order --------- line! Printed by the Consumer Cooperative of the Ministry of Economic Affairs of the Ministry of Economic Affairs of the Ministry of Economic Affairs of the People's Republic of China 504749 A7 _____B7 V. Description of the invention (30) The day ττ 'will not cause the motor 2 2 to be an electrically insulating and thermally conductive liquid, such as ethyl ethyl Diol. In addition, the cooling mechanism 37 can be operated in accordance with a signal detected by a temperature sensor (not shown) in accordance with the above-mentioned CPU 30. The cooling mechanism 37 is not necessarily configured as described above, but any one such as an air cooling type or an electric type using a Peltier element may be used. On the other hand, the processing chamber, for example, the inner chamber 23 (i-th processing chamber), is composed of a first fixed wall 34, a second fixed wall 38 opposite to the first fixed wall 34, and the first fixed wall 34. An inner cylinder 25 is formed between the second fixed wall 38 and the second fixed wall 38 via the first and second sealing members 40a and 40b, respectively. Then, the inner cylinder 25 is moved to the position surrounding the wafer (w) together with the rotating body 21 by the stretching action of the first cylinder 27 (refer to FIG. 18) as a moving mechanism, and the first cylinder 27 (see FIG. 18) is moved. While the fixed walls 34 are sealed with the first sealing member 40a interposed therebetween, and in a state where the fixed walls 34 are sealed with the second sealing member 40b interposed therebetween, an inner compartment is formed. 23 (the first processing room) (see table 19 and 23). In addition, the inner cylinder 25 is configured to be moved to the outer peripheral position (waiting position) of the fixed cylinder 36 by the contraction operation of the second cylinder 27 (see Figs. 20, 21, and 23). In this case, the opening of the inner end of the inner cylinder 25 is sealed with the first fixed wall 34 via the first poor sealing member 40a, and the base end of the inner cylinder 25 is provided around the periphery. The third sealing member 40c in the middle portion of the fixed cylindrical body 36 is sealed to prevent the ambient air of the medicinal solution remaining in the inner chamber 23 from leaking to the outside. Also, the outer grabbing chamber 24 (the second processing chamber) is located between the inner cylinder 25 and the inner cylinder 25 which has been moved to the waiting position, and is the first fixed wall interposed between the sealing member 40b and the like. ----- Install --- I l · --- Order ------- I (Please read the notes on the back before filling out this page) 33 Printed by the Intellectual Property Bureau Staff Consumer Cooperative of the Ministry of Economic Affairs 504749 A7 ---------— __ 5. Description of the Invention (SI) 34, the second fixed wall 38, and the fourth and fifth sealing members 40d between the second fixed wall 38 and the inner cylinder _, respectively. The outer cylinder 26 is formed as a coupling. Then, the outer cylinder 26 is moved to the position surrounding the wafer (w) together with the rotating body 21 in accordance with the stretching operation of the second cylinder “moving mechanism”. f, and it is sealed with the second fixed wall 38 through the fourth sealing member, and is also sealed through the $ sealing member 40e located outside the front end of the inner cylinder 25. The lower chamber is formed as an outer chamber μ (first) processing chamber) (refer to FIG. 23), and is configured to be moved to the outer peripheral position (waiting position) of the fixed cylinder 36 in accordance with the contraction operation of the second cylinder 28 ( Refer to Article 20 Figure and Figure 21). In this case, the 5th sealing member 40e is used to seal between the base end portions of the outer cylinder% and the inner cylinder 2 :). Because of this, the inner ambient air of the inner compartment 23 and the inner ambient air of the outer compartment 24 are isolated from each other in a gas-watertight state. Therefore, the & ^ air will not be mixed in the two compartments can be prevented Contamination due to the reaction of dissimilar treatment fluids. The above-mentioned fifth through fifth sealing members 40a to 40e are cracked so as to be swollen in the object to be sealed, for example, a sealing member made of synthetic rubber: a hollow gasket is filled with compressed air. Be formed. The inner cylindrical body 25 and the outer cylindrical body 26 formed as described above are each formed into a tapered shape that expands toward the front end, and are arranged along the first fixed wall 34, the second fixed wall 38, and erected on the same horizontal line. The majority of the device side walls 39 are parallel to each other, for example, three guides (not shown) are pre-installed to make sliding possible, and formed as described above! And the telescoping action of the second cylinders 27 and 28 makes it possible to haunt and overlap each other concentrically. If so, because this paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm), ---- 1 ---------—— Order · —I! 线 — ^ wi ( Please read the precautions on the back before filling this page) 34 504749 A7 B7 V. Description of the invention (32 cylinder 25 and outer cylinder 26 are formed into a cone shape that expands to one end, so it can be in the inner cylinder on the processing day The occurrence of 25 or more in the outer cylinder% of the rotating body M, 疋 軏 寸 "The air flow flows in a vortex to the unfolding (expanding) side, so that the internal liquid medicine can be easily discharged to the expanding side. The inner cylinder 25 and the outer cylinder 26 are structured to overlap to form the same axis. Therefore, it is possible to reduce the installation space of the inner cylinder 25 and the outer cylinder 26, the inner cabin 23, and the outer grab room. The size of the device is reduced. ^ The inner cylinder 25 and the outer cylinder 26 are formed of stainless steel. In addition, the outer peripheral surface of the inner limb 25 is formed, for example, a thermal insulation layer such as polyethylene tetrafluoride, The thermal insulation layer is configured to prevent the liquid medicine and the vapor of the medicine liquid supplied from the inner chamber 23 from being ice-cold. Among the physical fluid supply mechanisms, the chemical liquid, for example, the polymer removal fluid supply mechanism 50 is provided in the inner cylinder 25 as shown in FIGS. 8, 19 and M. The chemical liquid supply nozzle W, the chemical liquid supply portion 52, the pump 54, the pump 54 interposed in the chemical liquid supply line 53 that connects the chemical liquid supply nozzle 51 and the chemical liquid supply portion 52, and the controller & temperature I control Device 56 and on-off valve 57. In this case, the medicinal solution supply source, a medicinal solution supply tank 52a that stores the new medicinal solution supplied from the medicinal solution supply source 58, and the circulating supply of medicinal solution for processing The tank 52b is formed, and in the two chemical liquid supply tanks 52a and 52b, the first! Drain pipe 42 is connected to the first drain port 41 provided in the lower part of the expansion side portion of the inner chamber 23, and The first drain pipe 42 is connected to the circulation pipe 90 through a switching valve (switching mechanism) (not shown), and the first exhaust port 43 is provided at the upper part of the expansion side of the inner chamber 23, and There is a connection at the first exhaust port 43. The paper size is applicable to China National Standard (CNS) A4 (210 X 297 mm)
I 504749 A7 五、發明說明（33 ) 設未圖示之開閉閥的第！排氣管44。又，在兩供給槽52a、 52b之外側有配设溫度調整用熱絲52c，而使供給槽52心 内之藥液予以維持在所定之溫度。又，藥液供給噴嘴5i， 為對以轉動體21所保持之多數，例如，乃片之晶圓（w)全 部以均一可供給藥液，乃予形成為具有26個位於最側端之 晶圓（W)的外方及各晶圓（w)間之噴嘴孔（未圖示），且予構 成為使藥液從各喷嘴孔以大約為扇形狀予以喷射。由於 此，從藥液供給喷嘴51之喷嘴孔向著與轉動體21一起作旋 轉之晶圓予以供給藥液，因此，對由轉動體2丨所保持之多 數，例如為25片之晶圓（W)，能將藥液予以均一供給，而 將藥液僅供給晶圓（W)之表面側之場合，即以25個之噴嘴 孔亦可以。 線 濟 部 智 慧 財 產 局 員 工 消 費 藥液之溶劑，例如，：[PA之供給機構6〇乃如在第21圖 所示，依具備兼用為裝設在内筒體25内之上述藥液供給噴 鳴之供給噴嘴5 1 (以下，以藥液供給噴嘴5〗作其代表）、溶 劑供給部61、介設於連接該供給噴嘴51與藥液供給部52之 1卩八供給官路62的幫浦54八、過濾器55八以及1?八供給閥63。 此場合’溶劑供給部61乃由溶劑、例如，IpA之供給源Μ、 欲予儲存從該IPA供給源64所供給之新規的1?八之IPA供給 槽61a以及欲予儲存供予處理之IpA的循環供給槽6比所構 成，且在兩EPA供給槽61a、01b乃予連接介著未圖示之切 換閥（切換機構）而對連接在設於上述内艙室23之擴展側部 位的下部之第1排液埠口 41的第丨排液管42之循環管路9〇。 另方面，洗滌液，例如，純水之供給機構7〇乃如在第 本紙張尺度適用中國國家標準（CNS)A4規格⑵G χ 297公爱I 504749 A7 V. Description of the invention (33) The first on-off valve is provided! Exhaust pipe 44. Further, a temperature adjustment hot wire 52c is disposed outside the two supply tanks 52a and 52b to maintain the chemical solution in the heart of the supply tank 52 at a predetermined temperature. In addition, the medicinal solution supply nozzle 5i is for the majority held by the rotating body 21. For example, all the wafers (w) are uniformly available for administration, and are formed so that there are 26 crystals located at the extreme ends. A nozzle hole (not shown) between the outside of the circle (W) and each wafer (w) is configured so that the chemical liquid is sprayed from each nozzle hole in a substantially fan shape. Because of this, the chemical liquid is supplied from the nozzle hole of the chemical liquid supply nozzle 51 toward the wafer that rotates with the rotating body 21, and therefore, for the majority held by the rotating body 2, for example, 25 wafers (W ), The chemical solution can be uniformly supplied, and when the chemical solution is only supplied to the surface side of the wafer (W), even 25 nozzle holes may be used. The employees of the Intellectual Property Bureau of the Ministry of Economic Affairs consume the solvent of the medicinal solution, for example: [The supply mechanism 60 of the PA is as shown in FIG. 21. Naruto's supply nozzle 51 (hereinafter, represented by the medicinal solution supply nozzle 5), the solvent supply unit 61, and a helper located on the 18th and 8th supply line 62 connecting the supply nozzle 51 and the medicinal solution supply portion 52 Pu 54 eight, filter 55 eight and eighteen supply valve 63. In this case, the solvent supply unit 61 is composed of a solvent, for example, a supply source M of IpA, a new IPA supply tank 61a to be stored from the IPA supply source 64, and an IpA to be stored for processing. The circulating supply tank is composed of 6 ratios, and the two EPA supply tanks 61a and 01b are connected to a lower part of the expansion side portion provided in the inner compartment 23 via a switching valve (switching mechanism) (not shown). The circulation line 90 of the first liquid discharge pipe 42 of the first liquid discharge port 41 is 90. On the other hand, the washing liquid, for example, the pure water supply mechanism 70, applies the Chinese National Standard (CNS) A4 specification ⑵G χ 297 as the paper standard.
I ^濟部智祭財產局員工消費合作社印製 A7 ^___B7 ______ 五、發明說明（34 ) 18圖、第19圖及第24圖所示，係具備予以裝設在第2固定 壁38之純水供給噴嘴71、純水供給源72、介設於連接純水 供給噴嘴71與純水供給源72之純水供給管路73之供給幫浦 74以及純水供給閥75。該場合，純水供給喷嘴71乃予配設 為位於内艙室23之外側的位置，同時，亦位於外艙室以之 内側的位置，且予構成為使内筒體25後退至等待位置，而 使外筒體26予以移動於包圍轉動體2丨與晶圓（w)之位置而 予形成外艙至24之時，其乃位於外艙室24内之位置並對於 晶圓（W)可供給純水。 又，在外艙室24之擴展側部位的下部設有第2排液埠 口 45，而於該第2排液埠口45乃予連接介設於未圖示之開 閉閥的第2排液管46。且在第2排液管46乃予介設欲予檢測 、、’屯水之比私且值之比電阻計47，因之，依該比電阻計47予 以檢測供予洗滌處理之純水的比電阻值，並將其信號予以 傳達於上述CPU 30之構成。由於此，以該比電阻計47予 以監視洗蘇處理之狀況，且予進行適正之洗游處理之後就 能予終了洗滌處理。 而在上述外搶至24之擴展側部位之上部乃設有第2排 氧璋口 48，且在該第2排氣槔口 48乃予連接介設於未圖示 之開閉閥的第2排氣管49。 又，乾燥流體供給機構8〇乃如在第丨8、第丨9圖及第24 所,’係具備予以裝設在第2固定壁38之乾燥流體供給噴 嘴81、乾燥流體，例如為氮氣（NO供給源82、介設於連接 乾燥流體供給噴嘴81與化供給源82之乾燥流體供給管路 Μ-----Μ---t---------^ (請先閱讀背面之注意事項再填寫本頁)I ^ Printed by the Consumers ’Cooperative of the Ministry of Economic Affairs and Intellectual Property of the Ministry of Economic Affairs A7 ^ ___ B7 ______ V. Description of the Invention (34) Figure 18, Figure 19 and Figure 24 are purely mounted on the second fixed wall 38 A water supply nozzle 71, a pure water supply source 72, a supply pump 74 and a pure water supply valve 75 interposed in a pure water supply line 73 connecting the pure water supply nozzle 71 and the pure water supply source 72. In this case, the pure water supply nozzle 71 is arranged at a position outside the inner compartment 23 and at the same time inside the outer compartment, and is configured so that the inner cylinder 25 is retracted to the waiting position so that When the outer cylinder 26 is moved to surround the rotating body 2 and the wafer (w) to form the outer chamber to 24, it is located in the outer chamber 24 and can supply pure water to the wafer (W) . A second liquid discharge port port 45 is provided at a lower portion of the expansion side portion of the outer compartment 24, and a second liquid discharge pipe 46 is connected to the second liquid discharge port port 45 through an on-off valve (not shown). . And in the second liquid discharge pipe 46, a specific resistance meter 47 which is to be tested and has a specific ratio of water and value is set. Therefore, according to the specific resistance meter 47, pure water supplied for washing treatment is detected. The specific resistance value, and its signal is transmitted to the configuration of the CPU 30 described above. Because of this, the specific resistance meter 47 can be used to monitor the condition of the washing process, and after the proper washing process is performed, the washing process can be terminated. A second row of oxygen ports 48 is provided on the upper part of the expansion side portion which is grabbed to 24 above, and the second exhaust port 48 is connected to the second row of an on-off valve (not shown). Trachea 49. The dry fluid supply mechanism 80 is, as shown in Figs. 8 and 9 and 24, "is equipped with a dry fluid supply nozzle 81 and a dry fluid, such as nitrogen ( NO supply source 82, a dry fluid supply line M ----- M --- t --------- ^ connected between the dry fluid supply nozzle 81 and the chemical supply source 82 (Please read first (Notes on the back then fill out this page)
37 504749 A7 五、發明說明（35 ) 經濟部智慧財產局員工消費合作社印製 83的開閉閥84、過濾器85以及溫度控制器86，且在乾 燥流體供給管路8 3上之溫度控制器86的二次側，乃介 著切換閥87而予連接從上述IPA供給管路62所分岐之分岐 管路88。該場合’乾燥流體供給噴嘴8丨乃與上述純水供給 喷嘴71同樣，係位於内艙室23之外側之同時，亦予配設為 位於外艙室24之内側，且使内筒體25予以後退於等待位置 而使外筒體26予以移動於包圍轉動體21與晶圓（w)之位置 並予形成外艙室24之時，即位於外艙室24内且予構成為對 於晶圓（W)乃以霧狀可供給％氣體與IpA之混合流體。該 場合，以氣體與IPA之混合流體予以乾燥之後，再僅以 A氣體作乾燥。而於此，乃針對乾燥流體為乂氣體與IpA 之混合流體之場合作說明，惟，僅予供給N]氣體以替代 該混合流體亦可以。 而上述藥液供給機構50、IPA供給機構60、於純水供 給機構70及乾燥流體供給機構8〇上之幫浦54、54A、溫 控制器溫度控制器86、開閉閥57、IpA供給閥63 及切換閥87,乃依CPU 30而與上述第}實施態樣同樣予 控制（參照第1 8圖）。 以如上述所構成之處理裝置2〇乃予配設在其上方具有 過濾單元（裝置）（未圖示）之處理室間内，而使清淨空氣經 常予以往下流通。 其次，將針對第7實施態樣有關之洗淨與乾燥處理 置之動作形悲作說明。首先，將收納搬入於搬入與搬出 620之托架輸入部621的未處理之晶圓（w)之托架61〇， 度 以 以 裝 部 而37 504749 A7 V. Description of the invention (35) The on-off valve 84, filter 85 and temperature controller 86 printed 83 by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, and the temperature controller 86 on the dry fluid supply line 83. The secondary side is connected to a branch line 88 branched from the IPA supply line 62 via a switching valve 87. In this case, the 'dry fluid supply nozzle 8' is located outside the inner compartment 23, similar to the pure water supply nozzle 71 described above, and is also arranged inside the outer compartment 24, and the inner cylinder 25 is retracted to When the waiting position causes the outer cylinder 26 to move to the position surrounding the rotating body 21 and the wafer (w) and forms the outer chamber 24, it is located in the outer chamber 24 and is configured so that the wafer (W) is The mist can supply a mixed fluid of% gas and IpA. In this case, after drying with a mixed fluid of gas and IPA, only A gas is used for drying. Here, the field cooperation is explained for the dry fluid being a mixed fluid of krypton gas and IpA, but only N] gas can be supplied instead of the mixed fluid. The above-mentioned chemical liquid supply mechanism 50, IPA supply mechanism 60, pumps 54 and 54A on the pure water supply mechanism 70 and the dry fluid supply mechanism 80, the temperature controller temperature controller 86, the on-off valve 57, and the IpA supply valve 63 And the switching valve 87 is controlled in accordance with the CPU 30 in the same manner as in the above-mentioned embodiment (see FIG. 18). The processing device 20 constructed as described above is disposed in a processing room having a filter unit (device) (not shown) above, so that clean air is always circulated downward. Next, the operation of the washing and drying treatment device related to the seventh embodiment will be described. First, the carrier 61o containing unprocessed wafers (w) carried in the carrier input section 621 of the carry-in and carry-out 620 is loaded with a mounting section and
(請先閱讀背面之注意事項再填寫本頁) Φ----^---訂 i 線丨(Please read the notes on the back before filling this page) Φ ---- ^ --- Order i line 丨
經_ 濟 部 智 慧4 財 產 局 員 工 費 合 作· 社 印 製 五、發明說明（36) 依托架搬送機構680予以搬送至托架載置台67〇上。接著， 晶圓搬送夾頭10就移動至托架載置台67〇上，而從托架61〇 内搬出晶圓（W)且將所受取之晶圓（w)予以搬送至處理部 630之處理裝置20之上方，即，内筒體25及外筒體26後退 至等待位置之狀態的轉動體21之上方位置。如是，乃如在 第17圖所示，晶圓施受手臂29就上昇且予接受由晶圓搬送 夾頭10所搬送之晶圓（W)，其後，就予下降且將晶圓（w) 交給轉動體21之固定保持棒31上之後，晶圓施受手臂29就 和動至原來之位置。將晶圓表面交給轉動體21之固定保持 棒31上之後，未圖示之閂鎖機構就動作而使晶壓制棒32移 動至晶圓（W)之上側端緣部，且予保持（樓住）晶圓（w)之上 部（參照第21圖）。 如上述，使晶圓（W)予以設置（設定）於轉動體21之後， 乃如在第19圖所示，内筒體25及外筒體26就移動至包圍轉 動體21及晶圓（W)之位置，而將晶圓（w)收容於内艙室23 内。於此狀恕，首先，就對晶圓（W)供給藥液而進行藥液 處理。該藥液處理乃於將轉動體21及晶圓（w)以低速旋 轉，例如為1〜500[rpm]作旋轉之狀態而將藥液供給所定 時間，例如為數十秒鐘之後，就予停止藥液之供給，其後， 將轉動體21及晶圓（W)以，例如為1〇〇〜3〇〇〇[rpm]，之高 速旋轉數秒鐘而將接觸在晶圓（W)表面之反應層的藥液予 以甩開去除。該場合，由於藥液去除之時間乃比藥液供給 (接觸）時間為短，因此，快速進行去除，而藥液供給時間 由於比去除時間為長，是故，乃能對晶圓表面以均一且予 504749 A7 B7 智 慧 局 員 工 消 費 五、發明說明（37 ) :刀接觸而予促進反應。甚至’依藥液或低速轉數與高速 t數之設定值，相反之，使藥液去除時間比藥液供給時間 :、長亦0提升處理效果。將該藥液m程與藥液去除 工程反覆數次至數千次而予終了藥液處理(藥液供給” 液去除處理）。如在㈣圖以兩點虛線所示，纟㈣心 内予以配設N2閘刀喷嘴89 ’而於甩開藥液之時，從队間 刀噴嘴89予以吹著乂氣體，即更能迅速進行甩開即去除。 而此場合’乂間刀噴嘴89乃介著開閉閥（未圖示）而予連接 在乾燥流體供給機構80之％供給源82就可以。 而於高溫處理時之藥液的場合，若提高晶圓（W)之轉 數’即予接觸在晶圓表面之藥液的溫度有可能會下降，因 此將作/皿度調整之藥液，例如，以喷霧予以供給並將晶 圓（W)周圍之環境空氣簡為高溫之狀態，以防止晶圓（W) 之溫度下降而作甩開處理為宜。 於上述藥液處理工程上，最初所供給之藥液乃予使儲 2循環供給槽521)内之藥液，而該最初所使用之藥液就 —第排;夜S 42予以廢棄，且供予以後之處理的藥液乃循 環供:給儲存在供給槽52b内之藥液。而且，藥液處理之最 後▲就予使用從藥液供給源58供給予供給槽仏内之新規 的藥液’且予終了藥液處理。 =在樂液處理工程之時，供予藥液處理之藥液就予排 於第1排液埠口 4 1内，且依切換閥（未圖示）之動作而予 排出至樂液供給部52之循環管理9〇或第1排液管U，另方 k *液所發生之氣體就介著第〗排氣埠口 G而從第1排_ Printed by the Ministry of Economic Affairs, the Intellectual Property Agency, and the Employees' Co-operation Agency · Printed by the Agency V. Description of the invention (36) It is transferred to the bracket mounting table 67 by the bracket transfer mechanism 680. Next, the wafer transfer chuck 10 is moved to the carrier mounting table 67o, and the wafer (W) is carried out from the carrier 61o and the received wafer (w) is transferred to the processing section 630 for processing. Above the device 20, that is, above the rotating body 21 in a state where the inner cylinder 25 and the outer cylinder 26 are retracted to the waiting position. If so, as shown in FIG. 17, the wafer receiving arm 29 rises and accepts the wafer (W) transferred by the wafer transfer chuck 10, and thereafter, lowers and moves the wafer (w ) After being transferred to the fixed holding rod 31 of the rotating body 21, the wafer receiving arm 29 moves to the original position. After the surface of the wafer is handed over to the fixed holding rod 31 of the rotating body 21, a latch mechanism (not shown) operates to move the crystal pressing rod 32 to the upper edge of the wafer (W) and hold it (Floor). (Live) Upper part of wafer (w) (refer to Figure 21). As described above, after the wafer (W) is set (set) on the rotating body 21, as shown in FIG. 19, the inner cylinder 25 and the outer cylinder 26 move to surround the rotating body 21 and the wafer (W ), And the wafer (w) is contained in the inner chamber 23. In this case, first, a chemical solution is supplied to the wafer (W) to perform chemical solution processing. This chemical liquid treatment is performed after the rotating body 21 and the wafer (w) are rotated at a low speed, for example, 1 to 500 [rpm], and the chemical liquid is supplied for a predetermined time, such as tens of seconds. After the supply of the chemical solution is stopped, the rotating body 21 and the wafer (W) are rotated at a high speed of, for example, 1000 to 3000 [rpm] for several seconds to contact the surface of the wafer (W). The chemical solution in the reaction layer is shaken off and removed. In this case, the removal time of the chemical solution is shorter than the supply (contact) time of the chemical solution, so the removal is performed quickly, and the supply time of the chemical solution is longer than the removal time, so the wafer surface can be uniformly treated. And to 504749 A7 B7 wisdom bureau staff consumption V. Invention Description (37): Knife contact to promote the response. Even according to the setting value of the liquid medicine or the number of low-speed revolutions and the high-speed t, on the contrary, the time for removing the liquid medicine is longer than the time for supplying the liquid medicine: 0, and the processing effect is improved. Repeat the process of the medicinal solution and the medicinal solution removal process several times to thousands of times to complete the medicinal solution treatment (the medicinal solution supply and the liquid removal process). As shown by the two dotted lines in the figure, apply it in the heart. It is equipped with N2 gate knife nozzle 89 ', and when the liquid is thrown off, the radon gas is blown from the inter-knives nozzle 89, so that it can be quickly removed and removed. It is sufficient to open and close the valve (not shown) and connect it to the% supply source 82 of the dry fluid supply mechanism 80. In the case of a chemical solution during high temperature processing, if the number of revolutions of the wafer (W) is increased, the contact will be made. The temperature of the chemical solution on the surface of the wafer may decrease. Therefore, the chemical solution used for the adjustment of the chemical level, for example, is supplied by spraying and the ambient air around the wafer (W) is kept at a high temperature to prevent it. On the wafer (W), the temperature is lowered and it is better to perform the shake-off process. In the above-mentioned chemical liquid processing project, the chemical liquid initially supplied is the chemical liquid in the storage tank 2 (circulating supply tank 521), and the initial use The liquid medicine is-row; night S 42 is discarded, and the liquid medicine for subsequent treatment is followed Circulation supply: The medicinal solution stored in the supply tank 52b is used. Moreover, at the end of the medicinal solution processing, the new medicinal solution supplied from the medicinal solution supply source 58 to the supply tank is used, and the medicinal solution processing is ended. = At the time of the music liquid treatment project, the liquid medicine for treatment is discharged into the first liquid port 41, and is discharged to the music liquid supply section according to the operation of the switching valve (not shown). The cycle management of 52 is 90 or the first liquid discharge pipe U, and the gas generated by the other k * liquid is passed from the first exhaust port G to the first liquid discharge pipe G.
I ^U4/49 A7 五、發明說明（38 ) 氣管44予以排氣。 進行藥液處理之後，乃以使晶圓（W)T以收容在内艙 室23内之原狀下，從兼用作為IPA供給機構⑼之心的供 給喷嘴之藥液供給噴嘴51，以低速旋轉，例如，以丨〜 5〇〇[n)m]予以旋轉之狀態供給所定時間，例如為數十秒鐘 之IPA之後，就予停止IPA之供給，其後，將轉動體”及 晶圓（w)以高速旋轉數秒鐘，例如，以1〇〇〜3〇〇〇[卬叫予 以旋轉而使附著在晶圓（W)表面之IPA甩開去除。將該IPA 供給工程與IPA去除工程反覆數次至數千次而予終了藥液 去除處理（IPA供給、IPA去除處理）。於該藥液去除處理上 亦與上述藥液處理工程同樣，於最初所供給之ιρΑ乃予使 用儲存在循環供給槽61b内之IPA，且該最初所使用之ιρΑ 就從第1排液管42予以廢棄，而供予其以後之處理的IpA 乃將儲存在供給槽61内之IPA予以循環供給。而且，於藥 液去除處理之最後，就使用從IPA供給源64予以供給在供 給槽6U内之新規的IPA，並予終了藥液去除處理。 部 智 慧〜 財 產 局 員 工 消 費 合 作 社 印 製 ----------------- (請先閱讀背面之注意事項再填寫本頁) •線. 在藥液去除處理上，供予藥液去除處理之IpA就予排 出至第1排氣埠口41，且依切換閥（未圖示）之動作而予排 出於溶劑供給部61之循環管路90或第1排液管42,另方面，I ^ U4 / 49 A7 V. Description of the Invention (38) The air pipe 44 is exhausted. After the chemical liquid processing is performed, the wafer (W) T is rotated at a low speed from the chemical liquid supply nozzle 51 that also serves as the supply nozzle of the heart of the IPA supply mechanism, as it is contained in the inner chamber 23, for example, , Supply a predetermined time in a state where it is rotated from 丨 to 5〇〇 [n] m], for example, after tens of seconds of IPA, the supply of IPA is stopped, and then the rotating body "and wafer (w) Rotate at high speed for a few seconds, for example, rotate it by 100 ~ 300 [[Beep] to shake off and remove the IPA attached to the surface of the wafer (W). This IPA supply process and IPA removal process are repeated several times. The chemical solution removal process (IPA supply, IPA removal process) is completed up to several thousand times. The chemical solution removal process is the same as the above-mentioned chemical solution processing process, and the first supplied ρρΑ is stored in a circulating supply tank. The IPA in 61b is discarded from the first liquid discharge pipe 42, and the IpA for subsequent processing is the circulating supply of the IPA stored in the supply tank 61. Furthermore, At the end of the liquid removal process, use the IPA supply source 64 Supply the new IPA in the supply tank 6U, and finish the removal of the chemical solution. Ministry of Wisdom ~ Printed by the Consumer Cooperative of the Property Bureau ----------------- (Please first Read the precautions on the back and fill in this page again) • Line. In the chemical solution removal process, the IpA supplied to the chemical solution removal process will be discharged to the first exhaust port 41, and according to the switching valve (not shown) It is operated to be discharged to the circulation pipe 90 or the first liquid discharge pipe 42 of the solvent supply unit 61. On the other hand,
IpA氣體就介著第i排氣埠口 43而從第i排氣管予以排 氣。 藥液處理及藥液去除處理終了之後，乃如在第23圖所 不，内筒體25後退於等待位置而轉動體21及晶圓（w)由外 筒體26所包圍，即，使晶圓（W)予以收容在外艙室24内。 丨本紙張尺B用Tii^y^NS)A4規格χ 2 一 41 504749 A7 經濟部智慧財產局員工消費合作社印製 五、發明說明（39 ) 於該狀態下，首先，對於所旋轉之晶圓（w)，乃從洗滌液 供給機構之純水供給噴嘴71予以供給洗滌液，例如為純 水，而作洗滌處理，於此，將轉動體2丨及晶圓以低速 旋轉，例如，以1〜5〇〇[rpm]作旋轉之狀態予以供給所定 時間，例如為數十秒鐘之洗滌液之後，就予停止洗滌液之 供給，其後，將轉動體21及晶圓（W)以高速旋轉，例如， 以100〜3000[rpm]予以旋轉數秒鐘，而從晶圓（w)之表面 甩開洗滌液而予去除。供予該洗滌處理之純水與所去除之 IPA就介著第2排液埠口 45而從第2排液管私予以排出。 又，在外艙室24内所發生之氣體乃介著第2排氣埠口料而 從第2排氣管49予以排出至外部。 以如是，將洗滌處理進行所定時間之後，乃以在外艙 室24内予以收容晶圓（”）之原狀下，從乾燥流體供給機構 80之N2氣體供給源82及IPA供給源64，而將N,氣體與IPA 之混合流體予以供給於所旋轉之晶圓（w)，使附著在晶 表面之純水予以去除，就能進行晶圓（〜）與外艙室24内 乾燥。又，依R氣體與IPA之混合流體作乾燥處理之後 由於僅將N:氣體供給於晶圓（w)，因此，能將晶圓（f)之 乾燥與外艙室24内之乾燥以更良好之效率予以進行。 以如上述，終了晶圓（W)之藥液處理、藥液去除處理、 洗滌處理及乾燥處理之後，就使外筒體26後退至内筒體 之外周側的等待位置，另方面，未圖示之閂鎖解除機構 動作而使晶圓壓制棒32從晶圓（W)之壓制位置作後退。 是，晶圓施受手臂29就上昇並予以取以轉動體2丨之固定保 圓 之 25 乃 如 (請先閱讀背面之注意事項再填寫本頁) # 訂---------線！ 表紙張尺度適用中國國家標準（CNS)A4規格（21〇 χ 297公楚 42IpA gas is exhausted from the i-th exhaust pipe through the i-th exhaust port 43. After the chemical liquid treatment and the chemical liquid removal processing are completed, as shown in FIG. 23, the inner cylinder 25 is retracted to the waiting position and the rotating body 21 and the wafer (w) are surrounded by the outer cylinder 26, that is, the crystal The circle (W) is contained in the outer compartment 24.丨 This paper ruler B uses Tii ^ y ^ NS) A4 size χ 2-41 504749 A7 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 5. Description of the invention (39) In this state, first, for the wafer being rotated (W) The washing liquid is supplied from the pure water supply nozzle 71 of the washing liquid supply mechanism, for example, pure water, and the washing process is performed. Here, the rotating body 2 and the wafer are rotated at a low speed, for example, at 1 ~ 500 [rpm] is supplied in a rotating state for a predetermined period of time, for example, after the washing liquid is tens of seconds, the supply of the washing liquid is stopped, and thereafter, the rotating body 21 and the wafer (W) are fed at a high speed. The rotation is performed, for example, at 100 to 3000 [rpm] for several seconds, and the washing liquid is shaken off the surface of the wafer (w) to be removed. The pure water supplied to the washing process and the removed IPA are discharged from the second liquid discharge pipe through the second liquid discharge port 45. The gas generated in the outer compartment 24 is discharged from the second exhaust pipe 49 through the second exhaust port material to the outside. Therefore, after the washing process has been performed for a predetermined time, the N2 gas supply source 82 and the IPA supply source 64 of the dry fluid supply mechanism 80 are used to retain the wafers (") in the outer chamber 24, and N, The mixed fluid of gas and IPA is supplied to the rotating wafer (w), and the pure water adhering to the crystal surface is removed to dry the wafer (~) and the inside of the outer chamber 24. In addition, according to R gas and After the IPA mixed fluid is dried, only N: gas is supplied to the wafer (w). Therefore, the drying of the wafer (f) and the drying in the outer chamber 24 can be performed with better efficiency. As described above, after the chemical liquid treatment, chemical liquid removal processing, washing processing, and drying processing of the wafer (W) are completed, the outer cylinder 26 is retracted to the waiting position on the outer peripheral side of the inner cylinder. On the other hand, not shown The latch release mechanism operates to move the wafer pressing rod 32 back from the pressing position of the wafer (W). Yes, the wafer receiving arm 29 rises and takes the fixed roundness 25 of the rotating body 2 as in (Please read the notes on the back before filling in this ) # Set --------- line! Sheet of paper scales applicable Chinese National Standard (CNS) A4 size (42 21〇 χ 297 male Chu
JU4/4V A7JU4 / 4V A7
訂 1 裝 504749 A7 五、發明說明（41Order 1 pack 504749 A7 V. Description of the invention (41
筒體26之外部的第2固定壁38，且將純水供給噴嘴71及乾 燥流體供給噴嘴81予以配設在外筒體26内亦可以，或著， 將樂液供給喷嘴5 1 (兼用為IPA供給噴嘴）、純水供給喷嘴7 J 及乾燥流體供給噴嘴81予以配設在内筒體25内及外筒體26 内亦可以。 液 艙 種 於上述實施態樣，係針對於内艙室23(第丨處理室）内 進行樂液處理與樂液去除處理，而於外艙室(第2處理室） 内進行洗滌處理與乾燥處理之場合作說明，惟，該發明之 處理方法並不限定為如是之處理方法。例如，在内艙室 23(第1處理室）與外艙室24(第2處理室），使用種類相異之 藥液進行藥液處理亦為可行。如是，使用種類相異之藥 且於相異之處理室，即，於内艙室23(第1處理室）與外 室24U2處理室）各別予以處王里，就能予&止由於相異 顯之樂液的混雜而生之交又污染。 又，於上述實施態樣上，係針對予以處理收容在轉動 體2!之最大數量的晶圓（w)之場合作說明，惟可因庫必 要性，乃對於比收容在轉動體21之最大片數為少之片數， 甚至，視情況亦可進行丨片之晶圓（w)的處理。 而於上述實施態樣，係針對將本發明有關之處理方法 及液返理裝置應用於半導體晶圓之洗淨·乾燥處之 場合作說明，惟，對於丰遙辟曰 "^ 等亦能予適用為理所當然1曰曰胃以夕之LCD用破璃基板 《第8實施態樣》： 以下’將針對為進行本發明之第8〜第u實施態樣有 本紙張尺ϋ用中_冢標準(CNS)A4The second fixed wall 38 on the outside of the cylinder 26 may be provided with the pure water supply nozzle 71 and the dry fluid supply nozzle 81 in the outer cylinder 26, or, the music fluid supply nozzle 5 1 (also used as IPA) (Supply nozzle), pure water supply nozzle 7J, and dry fluid supply nozzle 81 may be disposed inside the inner cylinder 25 and the outer cylinder 26. The liquid tank is in the above-mentioned embodiment, and is directed to the music liquid treatment and the music liquid removal treatment in the inner compartment 23 (the first treatment chamber), and the washing treatment and the drying treatment in the outer compartment (the second treatment chamber). Field cooperation description, however, the invention's processing method is not limited to such a processing method. For example, it is also feasible to use different types of chemical liquids to perform chemical liquid treatment in the inner compartment 23 (the first processing chamber) and the outer compartment 24 (the second processing chamber). If so, using different types of medicine in different processing rooms, that is, in the inner compartment 23 (the first processing room) and the outer room 24U2 processing room), respectively, can be given & The confusion of the fluids of different manifestations was contaminated and contaminated. In addition, in the above embodiment, it is a field cooperation description for processing the maximum number of wafers (w) accommodated in the rotating body 2 !, but due to the necessity of the library, The number of wafers is small, and even wafers (w) can be processed as appropriate. In the above embodiment, the field cooperation description regarding the application of the processing method and the liquid reflow device related to the present invention to the cleaning and drying places of semiconductor wafers, but also for Fengyao Pi " ^ etc. Applicable as a matter of course 1 is called "the eighth embodiment" of a broken glass substrate for LCDs: "The following will be used in the paper ruler for the eighth to uth embodiments of the present invention. Standard (CNS) A4
_ % 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 504749 五、發明說明（42 關之曰曰圓處理方法之需的濕式處理裝置4〇 1作說明。第％ 圖及第28圖均為濕式處理裝置4〇1之戴面說明圖。第]6圖 係表不將内處理槽405伸出在外處理槽4〇4之外部的狀態， 而第28圖係表示將内處理槽4〇5縮入於外處理槽4〇4之内部 的狀態。第27圖為第26圖上之A-A線箭頭戴面圖，乃表示 外處理槽404之内部構造。第29圖為第28圖上之B-B箭頭 截面圖，乃表示外處理槽4〇4及内處理槽4〇5之内部構造。 濕式處理裝置401，係能予去除予以成膜在晶圓（w) 之表面上的多層膜，例如，光抗蝕膜、低呔膜（絕緣膜）、 SiN膜（氮化矽膜）等，同時，能去除在低_k膜或siN膜之蝕 刻之時所形成之側壁保護膜（聚合物膜），又，依純水或異 丙醇（IPA)液而將晶圓（W)作洗滌洗淨，且將晶圓（w)作自 旋乾燥之構成。 如在第26圖及第28圖所示，濕式處理裝置4〇 1，係具 有以水平姿勢予以固著在側壁402之筒框403。由該筒框4〇3 所支撐之外處理槽404以及對於該外處理槽4〇4而予構成為 可自由進退之内處理槽405。 在筒框403内設有馬達406，而該馬達4〇6之旋轉軸4〇7 乃’丨著軸承（未圖示）而貫通外處理槽4〇4之右側面（第76圖 及第28圖中之右側）404a ’且突出於將於後述之外處理室 420内。而旋轉軸407之前端部乃予連接在轉動體部4〇9， 且如在第27圖及第29圖所示，於該轉動體部4〇9設有5支為 保持晶圓（W)之用的保持構件410。 在外處理槽404内，乃予形成具有充分之寬裕而能予 -----^---^ —------- (請先閱讀背面之注意事項再填寫本頁)_% Printed by the Consumer Cooperative of the Ministry of Intellectual Property of the Ministry of Economic Affairs, printed by 504749 5. Description of the Invention (42 Guan Zhiyue Wet processing device 401 required for the round processing method is described. The% and 28 figures are both wet An illustration of the wearing surface of the processing device 401. Figure 6 shows the state in which the internal processing tank 405 is extended outside the external processing tank 404, and Figure 28 shows the internal processing tank 405 being contracted. The state of being inserted into the outer processing tank 400. Fig. 27 is an AA line arrow wearing view on Fig. 26, which shows the internal structure of the outer processing tank 404. Fig. 29 is a BB arrow on Fig. 28 The cross-sectional view shows the internal structure of the outer processing tank 404 and the inner processing tank 405. The wet processing device 401 is a multilayer film that can be removed and formed on the surface of a wafer (w), for example, Photoresist film, low chirp film (insulating film), SiN film (silicon nitride film), etc. At the same time, it can remove the side wall protective film (polymer film) formed when the low-k film or siN film is etched. In addition, according to pure water or isopropyl alcohol (IPA) liquid, the wafer (W) is washed and washed, and the wafer (w) is spin-dried. As shown in Fig. 26 and Fig. 28, the wet processing device 4101 has a cylinder frame 403 fixed to the side wall 402 in a horizontal posture. The cylinder frame 403 is supported by the cylinder frame 403. The processing tank 404 and the internal processing tank 405 which can be freely moved forward and backward with respect to the outer processing tank 400 are provided. A motor 406 is provided in the barrel frame 403, and a rotation axis 407 of the motor 4.0 is ′ 丨A bearing (not shown) penetrates the right side surface of the outer processing tank 404 (the right side in FIGS. 76 and 28) 404a 'and protrudes in the outer processing chamber 420 to be described later. The rotation shaft 407 The front end portion is connected to the rotating body portion 409, and as shown in FIGS. 27 and 29, five holding members for holding the wafer (W) are provided on the rotating body portion 409. 410. In the outer processing tank 404, it is formed with sufficient margin to be able to give ----- ^ --- ^ --------- (Please read the precautions on the back before filling this page)
五、 發明說明（43 經濟部智慧財產局員工消費合作社印製 匕圍例如’ 25片之晶圓（w)的前述之外處理室420。於 。亥外處理室420乃如在第27圖所示，依照處理方法而使從 供給源（未圖示）可吐出各種藥液、純水、IPA液、N，氣體 之吐出口 421予以裝置其多數之吐出部422，在外處理室420 之上部予以配置於2處。 在内處理槽405，於内處理槽405進入於外處理槽4〇4 之時，在外處理室420内有形成能予包圍晶圓（w)之内處 理室430。在該内處理室43〇就依照處理方法，乃使從供給 源（未圖示）可吐出各種藥液、純水、IPA液之吐出口 431予 以裝置多數的吐出部432，如在第29圖所示，在内處理室43() 之上部予以配置於2處。而且，在内處理室43〇之上部乃予 配置具有與吐出部432為同樣之構成，且將吐出氣體之 吐出部433。 於濕式處理裝置401之左側面（第26圖及第28圖中之左 側）401a之下部設有第1排液埠口 44〇，而對該第^非液埠口 440予以連接第1排液管441。又，於第1排液埠口 44〇之下 方设有第2排液埠口 442且對該第2排液埠口 442即予連接第 2排液管443。在第26圖所示之狀態，於外處理室42〇内所 吐出之各種藥液、純水、IPA液乃介著第2排液埠口 442、 第2排液管443而予排液。該場合，可回收所排液之藥液予 以再利用。又，於第28圖所示之狀態，於内處理室42〇内 所吐出之各種藥液、純水、IP A液乃介著第1排液埠口 4 4 〇、 第1排液管441而予排液。該場合，亦可使所排液之藥液予 以再利用。 ----Μ------------^ I. (請先閱讀背面之注意事項再填寫本頁) 46 504749 理 鍍 A7 五、發明說明（44 於濕式處理裝置401之左側面（第26圖及第28圖中之左 側）401a之上部設有第}排氣埠口 444，且有第i排氣管料5 連接於該第1排氣埠口 444。又，於第丨排氣埠口 444之上方 設有第2排氣埠口 446且有第2排氣管料7連接於該第2排氣 埠口 446。在第26圖所示之狀態乃是介著第2排氣埠口料6、 第2排氣管447而使外處理室42〇之室内環境空氣予以排 氣。又，在第28圖所示之狀態，即介著第丨排氣埠口4料、 第1排氣管445而使内處理室43〇之室内環境空氣予以排 氣。 其次，針對以如上述所構成之濕式處理裝置4〇1所進 行之第8貝施恶樣有關之晶圓處理方法作說明。該晶圓處 理方法，係在矽（Si)基板之晶圓（w)的表面上所成膜之銅 (Cu)膜，予以積層光抗蝕膜、低彳膜（絕緣膜）、膜（氮 化矽膜）且將對光抗蝕膜與低-k膜及SiN膜作蝕刻之時所形 成之側壁保濩膜（聚合物膜）為同一藥液，而使用抗钱劑· 聚合物去除液予以去除（濕式處理）。且將光抗蝕膜與側壁 保護膜於同一處理室内作去除。 第30A圖至第30C圖係說明該晶圓處理方法之工程說 明圖。又，第31A圖及第31B圖係對於晶圓（w)作濕式處理 之時的工程說明圖。於以下之說明，係設内處理室430内 作為濕式處理用之處理室，而使外處理室作為後處 用之處理室。 首先如在弟30A圖所不之晶圓（W)，乃依電解電 等在晶圓（W)之表面上予以成膜銅膜101，且在其上，依 本紙張尺度翻ϋ未標準（CNS)A4規格⑽x 297公髮）V. Description of the Invention (43 The Intellectual Property Bureau of the Ministry of Economic Affairs's Consumer Cooperatives printed dagger enclosures such as the '25 wafers (w) outside the aforementioned processing room 420. Yu. The Haiwai processing room 420 is as shown in Figure 27. According to the processing method, various medical liquids, pure water, IPA liquid, N, and gas can be discharged from a supply source (not shown). The gas outlet 421 is provided with a plurality of discharge portions 422, and is provided above the outer processing chamber 420 Arranged at 2. When the inner processing tank 405 enters the outer processing tank 404, an inner processing chamber 430 is formed in the outer processing chamber 420 so as to surround the wafer (w). The internal processing chamber 43 is processed in accordance with the processing method, so that various medical liquids, pure water, and IPA liquid can be discharged from the supply outlet (not shown). The upper part of the inner processing chamber 43 () is arranged at two positions. Further, the upper part of the inner processing chamber 43 (0) is arranged to have the same structure as the ejection part 432, and the ejection part 433 which ejects gas. Left side of the type processing device 401 (left of FIGS. 26 and 28) (Side) 401a is provided with a first liquid port port 44o under the 401a, and the first non-liquid port port 440 is connected to the first liquid pipe 441. Also, below the first liquid port port 44o The second liquid discharge port 442 and the second liquid discharge pipe 443 are connected to the second liquid discharge port 442. In the state shown in FIG. 26, various medical liquids discharged from the outer processing chamber 42o, Pure water and IPA liquid are discharged through the second liquid discharge port 442 and the second liquid discharge pipe 443. In this case, the liquid medicine can be recovered for reuse. Also, as shown in FIG. 28 In the state, various medical liquids, pure water, and IP A liquid discharged from the inner processing chamber 42 are discharged through the first liquid discharge port 4 4 0 and the first liquid discharge pipe 441. In this case, it is also possible to discharge liquid. Reuse the discharged liquid. ---- Μ ------------ ^ I. (Please read the precautions on the back before filling this page) 46 504749 Physical plating A7 5 、 Explanation of the invention (44) On the left side of the wet processing device 401 (left side in Figs. 26 and 28) 401a is provided with an exhaust port 444, and an i-th exhaust pipe 5 is connected to The first exhaust port 444. Also, the first exhaust port A second exhaust port 446 is provided above the port 444 and a second exhaust pipe 7 is connected to the second exhaust port 446. The state shown in FIG. 26 is through the second exhaust port The material 6 and the second exhaust pipe 447 exhaust the indoor ambient air in the outer processing chamber 42. In the state shown in FIG. 28, the exhaust port 4 and the first The exhaust pipe 445 exhausts the indoor ambient air in the inner processing chamber 43. Next, the wafer processing method related to the eighth Besch sample performed by the wet processing apparatus 401 constructed as described above is performed. Explain. The wafer processing method is a copper (Cu) film formed on the surface of a wafer (w) of a silicon (Si) substrate, and laminated with a photoresist film, a low-thickness film (insulating film), and a film (nitrogen). Silicon film) and the side wall protection film (polymer film) formed when the photoresist film is etched with the low-k film and the SiN film is the same chemical solution, and the anti-money agent and polymer removal solution are used Remove it (wet process). The photoresist film and the side wall protective film are removed in the same processing chamber. Figures 30A to 30C are engineering diagrams illustrating the wafer processing method. 31A and 31B are process explanatory diagrams when the wafer (w) is wet-processed. In the following description, the inner processing chamber 430 is provided as a processing chamber for wet processing, and the outer processing chamber is used as a post-processing processing chamber. First, as shown in Figure 30A, the wafer (W) is formed with a copper film 101 on the surface of the wafer (W) according to electrolytic electricity and the like. ) A4 size ⑽ x 297
•裝---------訂· •線. (請先閱讀背面之注意事項再填寫本頁) -n I I >• Install --------- order · • line. (Please read the precautions on the back before filling this page) -n I I >
I 47 504749 A7I 47 504749 A7
II
^04749 綠濟部智鲁財產局員工消費合作社印製 A7 五、發明說明（46 ) 聚合物去除液係反應性高（反應速度高）之抗餘劑·聚合物 去除液’即，所谓之新規的抗餘劑·聚合物去除液，或使 用過濾器而使其回復反應性之抗蝕劑·聚合物去除液。又， 將如疋之未反應的抗姓劑·聚合物去除液吐出於晶圓（w) 之表面上的場合，乃使晶圓（w)，例如，以1〜”(^卬…程 度之低速旋轉數作旋轉’而將所吐出之未反應的抗蝕劑· 聚合物去除液予以均一擴散在晶圓（w)之表面上。由此， 於晶圓（W)之表面上予以引起無遺漏之化學反應，而使晶 圓（W)之表面上的光抗蝕膜104、側壁保護膜1〇6以整體性 予以均一溶解。 又該場合，因應抗餘劑·聚合物去除液之粘性而予控 制晶圓（W)之轉數，以使未反應之抗蝕劑·聚合物去除液 予以擴散於晶圓（W)之表面整體。即，例如，抗|虫劑·聚 合物去除液之粘性較高之場合，於低速轉數之範圍内就以 較高之轉數，使晶圓（W)予以旋轉，以提高粘性高之抗蝕 劑·聚合物去除液之流動性而予擴散至整體。另方面，於 抗餘劑·聚合物去除液去除液之粘性較低之場合，在低速 轉數之範圍内就以較低之轉數予以旋轉晶圓（w)，就可使 抗姓劑·聚合物去除液在晶圓（W)之表面上予以均一擴 散。而於此所謂之低速轉數，係表示供給於晶圓（w)之表 面上的抗蝕劑·聚合物去除液，對反應有充分之時間可接 觸於晶圓（W)之表面之程度的低轉數，且對將後述之高轉 數乃較為低速。 而且，由於將如是之晶圓（W)表面上之光抗蝕膜104、 ^--------^---------^ (請先閱讀背面之注意事項再填寫本頁)^ 04749 Printed A7 by the Consumer Cooperatives of the Zhilu Property Bureau of the Ministry of Green Economy V. Description of the Invention (46) Polymer Removal Liquid is highly reactive (high reaction speed) anti-remnant polymer removal fluid, that is, the so-called new regulation Anti-residue and polymer removal solution, or a resist and polymer removal solution that is made reactive by using a filter. In the case where the unreacted anti-name agent and polymer removal solution of 疋 is thrown out on the surface of the wafer (w), the wafer (w) is, for example, 1 to "(^ 卬 ... The low-speed rotation number is rotated to uniformly diffuse the discharged unreacted resist and polymer removal solution on the surface of the wafer (w). As a result, the surface of the wafer (W) is rendered non-reactive. The missing chemical reaction uniformly dissolves the photoresist film 104 and the side wall protection film 106 on the surface of the wafer (W) as a whole. In this case, the viscosity of the anti-resistant and polymer removal solution is responded to. The number of revolutions of the wafer (W) is controlled so that the unreacted resist · polymer removing solution is diffused throughout the entire surface of the wafer (W). That is, for example, anti-insectant · polymer removing solution When the viscosity is high, the wafer (W) is rotated at a higher number of rotations at a low speed to increase the fluidity of the highly viscous resist and polymer removal solution and diffuse. On the other hand, on the other hand, when the viscosity of the anti-residue and polymer removal liquid is low, the rotation speed is low. If the wafer (w) is rotated at a lower number of revolutions within the range, the anti-agent and polymer removal solution can be uniformly diffused on the surface of the wafer (w). The so-called low-speed revolution number Is a low number of revolutions which indicates that the resist and polymer removal solution supplied to the surface of the wafer (w) has a sufficient time for the reaction to contact the surface of the wafer (W), and will be described later. The high number of revolutions is relatively low. Moreover, since the photoresist film 104 on the surface of the wafer (W) is like this, ^ -------- ^ --------- ^ (Please (Read the notes on the back before filling out this page)
504749 A7 五、發明說明（47 ) 側壁保護膜106予以溶解，即，反應速度變為遲緩之反應 過的抗蝕劑·聚合物去除液就滯留於晶圓（W)之表面上。 於此，反應過之抗蝕劑·聚合物去除液係指於晶圓（％)之 表面上等，由於將光抗蝕膜104及側壁保護膜1〇6予以溶 解，而其反應性變為較低（反應速度變為遲緩）之抗蝕劑· 聚合物去除液。 如是，使反應過之抗蝕劑·聚合物去除液滯留於晶圓 (w)之表面上之場合，就予停止從吐出部432吐出抗蝕劑· 聚合物去除液’且如在第31B圖所示，以所加熱之％氣體 從吐出部432，例如，予以噴射約數秒鐘，而從晶圓（w) 之表面上使反應過之抗餘劑·聚合物去除液予以壓推流 動，予以替代。又，以如是，從吐出部432予以噴射n2氣 體之間，乃將馬達406之驅動量提高且使晶圓（w)之轉數 改變為，例如，100〜3000[rpm]程度之高速轉數，並依離 線 心力而將反應過之抗蝕劑·聚合物去除液從晶圓（w)予以 甩開。 於此，為將反應過之抗姓劑·聚合物去除液因應其粘 性而有效之從晶圓（W)的表面上予以去除，乃因應抗蝕 劑·聚合物去除液之粘性而予晶圓之轉數予以去除。 即，例如，抗蝕劑·聚合物去除液之粘性高之場合，於高 速轉數之範圍内乃以較高之轉數，使晶圓（w)予以旋轉， 且依大離心力而對粘性高之抗蝕劑·聚合物去除液亦可充 分予以甩開。另方面，抗蝕劑·聚合物去除液之粘性低之 場合，即於高速轉數之範圍内以較低轉數而使晶圓（w)予 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱 504749 A7504749 A7 V. Description of the invention (47) The side wall protective film 106 is dissolved, that is, the reacted resist and polymer removal solution whose reaction rate becomes slow is retained on the surface of the wafer (W). Here, the reacted resist and polymer removal solution refers to the surface of the wafer (%), etc., and the photoresist film 104 and the side wall protection film 106 are dissolved, and the reactivity becomes Slow (response reaction becomes slow) resist and polymer removal solution. If so, when the reacted resist / polymer removal solution is left on the surface of the wafer (w), the ejection of the resist / polymer removal solution from the ejection section 432 is stopped. As shown in FIG. 31B As shown in the figure, the heated% gas is ejected from the ejection part 432, for example, for a few seconds, and the reacted reactant-polymer removing liquid is pushed and flowed from the surface of the wafer (w), Instead. In addition, if n2 gas is sprayed from the discharge unit 432, the driving amount of the motor 406 is increased and the number of revolutions of the wafer (w) is changed to, for example, a high-speed number of revolutions of about 100 to 3000 [rpm]. , And the reacted resist and polymer removal liquid is thrown away from the wafer (w) according to the off-line force. Here, in order to effectively remove the reacted anti-agent and polymer removing liquid from the surface of the wafer (W) due to its viscosity, the wafer is given to the wafer in response to the viscosity of the resist and polymer removing liquid. The number of revolutions is removed. That is, for example, in the case where the viscosity of the resist and polymer removal solution is high, the wafer (w) is rotated at a higher number of revolutions in the range of the high-speed number of revolutions, and the viscosity is high due to a large centrifugal force. The resist and polymer removal solution can be sufficiently removed. On the other hand, when the viscosity of the resist and polymer removal solution is low, that is, the wafer (w) is applied to this paper standard at a lower speed within the range of high speed rotation, and the Chinese National Standard (CNS) A4 specification is applied. (210 X 297 Public Love 504749 A7
I濟部智影財產局員工消費合作社印製 以鴻，乃以小離心力亦可予以甩開粘性低之抗蝕劑·聚 合物去除液。而於此所謂之高速轉數，係指將晶圓（w)之 表面上的抗蝕劑·聚合物去除液，能以離心力而用力甩開 於周圍之程度的高旋轉數，且對前面所說明之低旋轉數為 較高速。 如是，從晶圓（W)之表面上而將反應過之抗蝕劑·聚 合物去除液作適宜去除，而使反應過之抗蝕劑·聚合物去 除液不會滯留於晶圓（W)之表面上。其後，將予供給第3 i A 圖之未反應過之抗蝕劑·聚合物去除液之工程及去除第 31B圖之反應過的抗蝕劑·聚合物去除液之工程，予以進 行例如數次〜數千次程度之反覆處理。由此，由於將反應 性兩之新規的抗蝕劑·聚合物去除液經常予以供給於晶圓 (W)之表面上，因此，以短時間可將晶圓（w)之表面上的 光抗姓膜104及側壁保護膜1 〇6以良好效率予以去除。 如是，由於去除光抗蝕膜104、側壁保護膜106，乃如 在第30C圖所示，於晶圓（W)之表面上，有予以形成銅膜 1〇1、接觸孔105之SiN膜102、低-k膜103會殘留。抗蝕劑 及聚合物之去除終了之時，就從吐出部432予以吐出IPA 液而將於先前之化學反應時所生成之反應物從晶圓（w)予 以流洗。而予吐水純水以替代IPA液，將反應物予以流洗 亦可以。 其次，將内處理槽405從外處理槽404予以退出，且將 晶圓（W)收納於外處理室402内。然後，從吐出部422予以 吐出純水而將晶圓（W)作洗務處理，而於最後進行自旋乾 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^--------^---------線 (請先閲讀背面之注意事項再填寫本頁) 51 504749 A7 五、發明說明（49 ) 部 智 慧 財 員 工 消 費 社 印 製 燥。 如上述說明，依據第8實施態樣有關之晶圓處理方法， 乃使用抗㈣.聚合物去除液予以去除光抗㈣ι〇4與側 壁保護膜106，因此’不必如習知，使光抗姓膜1〇4作乾式 電鍍處理。由於此’就能予防止於進行乾式錢處理之時 所產生之電漿’對銅膜101有不良影響，或因氧化之損傷 而生之不良影響。其結果’乃能以低電阻予以製造高品質 之銅配線。 並且，由於使用同-藥液且同時予以去除光抗姓膜 與側壁保護膜1G6,因此，其比使心_藥液而以濕式處 理光抗㈣104錢魏難1()6之場合，使;以處理成為 較簡單’且能縮短處理時間。又，不必依膜1〇2從 漿予以保護銅膜101 ’因此，能將SiN膜1〇2予以保持為π 膜之原狀。由於SiN膜102為高介電率膜，因此，若加厚$ = 膜1〇2之膜厚而予保護銅膜101，即，於SiN膜ι〇2有電 滯留之虞’是故’以如是’予以保持為薄膜就能予防止 線間容量之增加。 又，如在第31A圖、第31B圖所說明，由於反覆供。 未反應之抗蝕劑·聚合物去除液之工程與去除反應過之抗 蝕劑·聚合物去除液之工程，乃在晶圓（w)之表面上就經 常可供給未反應之抗蝕劑·聚合物去除液。是故，於晶圓 (W)之表面上就能使化學反應活潑進行，乃能有效進行光 抗蝕膜104及側壁保護膜106之去除。 而該場合，暫時予以停止未反應之抗蝕劑·聚合物去 電 薄 線 給 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） 504749 緩 濟 部 智 慧 財 產 局 員 工 消 費 合 作 社 印 製 A7 B7 五、發明說明（5〇 ) 除液之供給’而予進行反應過之抗钱劑·聚合物去除液之 去除工程’惟，予以進行未反應之抗蝕劑·聚合物去除液 之供給’且於去除時乃使晶圓（W)之轉數提高為比供給未 反應之抗蝕劑·聚合物去除液之時為高，而以離心力進行 反應過之抗钱劑·聚合物去除液之去除工程亦可以。又， 不予噴射N2氣體而僅以離心力從晶圓（w)予以去除反應過 之抗飯劑·聚合物去除液亦可以。相反之，不予旋轉晶圓 (W)而僅予噴射乂氣體以進行反應過之抗蝕劑·聚合物去 除液之去除亦可以。又，噴射純水及IPA以替代n2氣體予 以去除反應過之抗蝕劑·聚合物去除液。 又，由於在内處理室430内專門作藥液處理，因此， 於外處理室420内之内壁，予以去除光抗蝕膜1〇4及側壁保 護膜1 06之時所生成之反應物乃不會附著在内壁，就能使 外處理室420内保持為清淨。由於此，能有效進行洗滌處 理、自旋乾燥，並能使晶圓（W)完成為淨亮。又，在外處 理室420内可使内處理室430自由進退之構成的如是之濕式 處理裝置401，由於可連續進行處理，因此，能可圖生產 力之提升。 對於第8貫施態樣有關之濕式處理方法上，對外處理 室420及内處理室430有無供給液體，即，予以自由組人有 然抗姓劑·聚合物去除液、IPA液、純水及自旋乾燥)， 就可予以設定多數之處理方法，並將該等之例表示於表- 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） --------------裝-----：.---訂---------線 (請先閱讀背面之注意事項再填寫本頁} 53 504749 五、發明說明（5ι 表 内處理室 抗蝕劑.聚合物去除^〜ΙΡΑ液 抗钱劑·聚合物去除液—IPA液 抗蝕劑·聚合物去除液4純水 姓劑·聚合物去除液— 外處理室 ▲從有關之處理方法No.1〜版4之中，例如，依光㈣ 膜、側壁保護膜、低-k膜夕括相a &、阳加 胰之種類而予選擇最適宜之處理 法，就能進行良好之晶圓處理。 《第9實施態樣》： 其次’將針對第9實施態樣之濕式處理方法作說明 該濕式處理方法係使用相異之藥液予以去除⑼式處 抗餘膜及側壁保護膜(聚合物膜)，且將光抗_側壁 護膜於相異之處理室内予以去除。並使用作為第！藥液 ㈣劑去除液予以去除光抗㈣，而使用料第2藥液 聚合物去除液予以去除側壁保護膜。 第32A圖至第32D圖係說明該濕式處理方法之工程 明圖。於以下之說明’乃設内處理室彻作為抗钱· 用之處理室而外處理室42〇設為聚合物去除用之處理室（ I先’在第32A圖、第32B圖乃予進行與在前面所 明之第3GAI1、第3GB圖同樣之工程。而至此之工程， 非在濕式處理裝置4〇1内而均依例如，未圖示之cvDg 或銀刻裝置等之其他處理裝韻進行，而在濕式處理裝 401内就進行如下之處理。首先，將晶圓（w)收納在内 方 )光 保 訂 之 說 離 說 並 置 置 處 ▲ 本紙張尺度適用中國國冢標準（CNS)_A4規格⑽χ 297公髮 ^04749 五、發明說明（52 里至430内。然後，從吐出部432吐出抗蝕劑去除液。此時， 亦與先前所說明之第31八圖、第31B圖之工程同樣，反覆 所謂之未反應之抗蝕劑去除液的供給與反應過之抗蝕劑去 除液的去除’就可有效予以去除光抗蝕膜14〇。 接著，乃如在第33D圖所示，去除光抗蝕膜1〇4之後， 就從吐出部422依序予以吐出IPA液、純水，予以進行洗 滌處理，以流洗反應物，並將晶圓（W)作自旋乾燥。 以如是之工程，亦能予防止未予預料之反應，且能防 止將銅膜101予以氧化等而生之損傷。對於第9實施態樣有 關之晶圓處理方法，乃與在上述第8實施態樣之晶圓處理 方法同樣，對於外處理室420與内處理室43〇有無供給液體 訂 而可設定為多數之處理方法，而將該等之處理方法表示於 表-2 、表-3 。 Φ 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 55 504749 A7 B7 五、發明說明（S3 表 號碼 内處理室Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs and Economics in Yeh Hung, the low-viscosity resist and polymer removal solution can be thrown off with a small centrifugal force. Here, the high-speed rotation number refers to a high rotation number to which the resist and polymer removal solution on the surface of the wafer (w) can be forcefully thrown away by the centrifugal force. The low number of rotations explained is higher speed. If so, remove the reacted resist and polymer removal solution from the surface of the wafer (W) appropriately so that the reacted resist and polymer removal solution does not stay on the wafer (W). On the surface. Thereafter, the process of supplying the unreacted resist / polymer removing solution in Fig. 3 i A and the process of removing the reacted resist / polymer removing solution in Fig. 31B are performed, for example, Repeatedly to several thousand times. As a result, a new type of resist and polymer removal solution of a reactive type is often supplied to the surface of the wafer (W). Therefore, the photoresistance on the surface of the wafer (w) can be provided in a short time. The film 104 and the side wall protection film 106 are removed with good efficiency. If so, since the photoresist film 104 and the side wall protection film 106 are removed, as shown in FIG. 30C, there is a SiN film 102 on which the copper film 101 and the contact hole 105 are formed on the surface of the wafer (W). The low-k film 103 remains. When the removal of the resist and polymer is completed, the IPA solution is discharged from the discharge section 432, and the reactants generated during the previous chemical reaction are flow-washed from the wafer (w). Alternatively, pre-spitting pure water may be used instead of IPA solution, and the reactants may be flow washed. Next, the inner processing tank 405 is withdrawn from the outer processing tank 404, and the wafer (W) is stored in the outer processing chamber 402. Then, the pure water is discharged from the discharge unit 422, and the wafer (W) is processed for washing. At the end, the spin-drying is performed. The paper size is in accordance with the Chinese National Standard (CNS) A4 (210 X 297 mm) ^- ------- ^ --------- line (please read the precautions on the back before filling out this page) 51 504749 A7 V. Description of the invention (49) Printed by the consumer agency . As described above, according to the wafer processing method related to the eighth embodiment, the photoresist and the side wall protection film 106 are removed by using the anti-polymer. Polymer removal solution, so 'it is not necessary to make the photo-resistance The film 104 was subjected to dry plating. Because of this, the 'plasma generated when dry money processing is performed' can have an adverse effect on the copper film 101 or an adverse effect due to the oxidative damage. As a result, high-quality copper wiring can be manufactured with low resistance. In addition, since the same medicine solution is used and the photoresist film and the side wall protective film 1G6 are removed at the same time, it is more difficult to treat the photoresistance with the heart_medicine solution in a wet process. To make processing easier, and can shorten processing time. In addition, it is not necessary to protect the copper film 101 'from the slurry by the film 102. Therefore, the SiN film 102 can be maintained as the original film. Since the SiN film 102 is a high-dielectric film, if the film thickness of the film 102 is increased, the copper film 101 is protected, that is, the SiN film 102 may cause electrical retention. If it is' maintained as a thin film, the increase in the capacity between the wires can be prevented. In addition, as explained in FIGS. 31A and 31B, repeated submissions are made. The process of unreacted resist and polymer removal solution and the process of removing reacted resist and polymer removal solution are that unreacted resist can often be supplied on the surface of the wafer (w). Polymer removal fluid. Therefore, the chemical reaction can be actively carried out on the surface of the wafer (W), and the photoresist film 104 and the side wall protective film 106 can be effectively removed. In this case, the unreacted resist / polymer thinning wire will be temporarily stopped to apply the Chinese National Standard (CNS) A4 specification (21 × 297 mm) to this paper size. Printed by the cooperative A7 B7 V. Description of the invention (50) Supply of liquid removal 'Removal of anti-reactive agent and polymer removal solution for reaction' However, unreacted resist and polymer removal The supply of the liquid 'is used to increase the number of wafers (W) during removal than when the unreacted resist / polymer removal solution is supplied, and the reacted anti-money agent / polymerization is performed by centrifugal force. The removal process of the material removal solution is also possible. It is also possible to remove the reacted antifungal agent / polymer removing solution from the wafer (w) by centrifugal force without spraying N2 gas. On the other hand, instead of rotating the wafer (W), only the rubidium gas is sprayed to perform the removal of the reacted resist / polymer removing solution. In addition, pure water and IPA were sprayed to replace the n2 gas to remove the reacted resist / polymer removing solution. In addition, since the chemical processing is performed exclusively in the inner processing chamber 430, the reactants generated when the photoresist film 104 and the side wall protection film 106 are removed from the inner wall of the outer processing chamber 420 are not used. Since it adheres to the inner wall, the inside of the outer processing chamber 420 can be kept clean. Due to this, it is possible to effectively perform washing processing, spin drying, and to make the wafer (W) clear. In addition, the wet processing device 401 configured to allow the inner processing chamber 430 to advance and retreat freely in the outer processing chamber 420 can continuously perform processing, thereby improving productivity. Regarding the wet processing method related to the eighth embodiment, whether the external processing chamber 420 and the internal processing chamber 430 are supplied with a liquid, that is, the free group is provided with an anti-name agent, a polymer removal solution, an IPA solution, and pure water. And spin drying), you can set most of the processing methods, and show these examples in the table-this paper size applies Chinese National Standard (CNS) A4 specifications (210 X 297 mm) ------ -------- install -----: .--- order --------- line (please read the precautions on the back before filling this page) 53 504749 V. Description of the invention ( 5ιt resist in the processing chamber inside the table. Polymer removal ^ ～ ΙΡΑ liquid antirepellant · Polymer removal solution—IPA liquid resist · Polymer removal solution 4Pure water agent · Polymer removal solution—Outer processing room ▲ From the related processing methods No. 1 to version 4, for example, the most suitable processing method is selected according to the types of the light-shielding film, the side wall protective film, the low-k film, the phase a &, the yang plus the pancreas, A good wafer processing can be performed. "Ninth embodiment": Next, the wet processing method of the ninth embodiment will be described. This wet processing method is used The different chemical liquid is removed. The anti-residue film and the side wall protective film (polymer film) are removed, and the photoresistance_side wall protective film is removed in a different processing chamber. It is used as the first! The photoresist was removed, and the side wall protective film was removed using the second chemical liquid polymer removal liquid. Figures 32A to 32D are engineering drawings illustrating the wet processing method. The description below is included in the design The processing room is a processing room for anti-money and use, and the outer processing room 42 is set as a processing room for polymer removal (I'll be shown in Figure 32A and Figure 32B) The same project as the 3GB figure. However, the projects up to this point are performed in other processing equipment such as the cvDg or silver engraving equipment (not shown), but in the wet processing equipment 401. The following processing is performed within the first. First, the wafer (w) is stored in the inside.) The light-storing and detaching juxtaposition is placed. Fifth, the invention description (52 miles to 430. Then, from The outlet 432 ejects the resist removal solution. At this time, the supply of the so-called unreacted resist removal solution and the reacted resist are repeated in the same manner as the processes described in FIG. 31 and FIG. 31B described above. The photoresist film 14 can be effectively removed by the removal of the solvent removing solution. Next, as shown in FIG. 33D, after removing the photoresist film 104, the IPA liquid is sequentially discharged from the discharge portion 422. And pure water, washing treatment is performed to flow-wash the reactants, and the wafer (W) is spin-dried. With this process, unexpected reactions can also be prevented, and the copper film 101 can be prevented from being subjected to Damage caused by oxidation. The wafer processing method related to the ninth embodiment is the same as the wafer processing method of the eighth embodiment described above, and it can be set to a majority for the presence or absence of liquid supply in the outer processing chamber 420 and the inner processing chamber 43. The processing methods are shown in Table-2 and Table-3. Φ The size of this paper applies to Chinese National Standard (CNS) A4 (210 X 297 mm) 55 504749 A7 B7 V. Description of the invention (S3 Form No. Internal processing room
No·1 液一 No .2抗蝕劑去除液丨pA液—純水〜 No.3抗蝕劑去除液—IpA液— Νο·4抗蝕劑去除液—IpA液—5 抗姓劑去除液——純水3Dry 抗姓劑去除液——純水〜 抗蝕劑去除液——〜Dry 抗蝕劑去除液——〜 抗姓劑去除液_IpA液—純水〜^^ 抗姓劑去除液—IPA液—純水〜 抗姓劑去除液—IPA液'純水〜Dry No.12抗蝕劑去除液—IpA液—純水〜 No.13抗蝕劑去除液—IpA液—sDry N〇_14抗蝕劑去除液__^lpA液—4 No· 15抗蝕劑去除液—ιρΑ液〜 No.16抗蝕劑去除液—IpA液―— 外處理室No.1 liquid No.2 resist removal solution 丨 pA solution—pure water ~ No.3 resist removal solution—IpA solution—No. 4 resist removal solution—IpA solution—5 anti-name agent removal solution ——Pure water 3Dry anti-surname agent removal solution——pure water ~ resist removal solution—— ~ Dry resist removal solution—— ~ anti-surname agent removal solution_IpA solution—pure water ~ ^^ anti-surname agent removal Liquid—IPA liquid—Pure water ~ Anti-agent remover—IPA liquid 'Pure water ~ Dry No.12 resist remover—IpA liquid—Pure water ~ No.13 Resist remover—IpA liquid—sDry N 〇_14Resistant removal solution __ ^ lpA solution—4 No · 15 Resistant removal solution—ιρΑ 液 ～ No.16 Resistant removal solution—IpA solution——External processing room
No.5 No.6 No.7 No.8 No.9 No. 10 No. 11 —> 經濟部智慧財產局員工消費合作社印製 抗蝕劑去除液-抗蝕劑去除液-抗蝕劑去除液-抗蝕劑去除液一 抗蝕劑去除液-抗蝕劑去除液一 抗蝕劑去除液— Νο·24抗蝕劑去除液-No.5 No.6 No.7 No.8 No.9 No. 10 No. 11 — > Printed resist removal solution-resist removal solution-resist removal Liquid-resist removal solution-resist removal solution-resist removal solution-resist removal solution — Νο · 24resist removal solution-
No. 17 No. 18 No. 19 Νο·20 Νο_21 Νο.22 Νο.23 ―純水 '純水—Dry >純水-^ > —Dry ~>Dry 聚合物去除液-> IPA液-> 純水Dry 聚合物去除液->1?八液-> 純水Drv 聚合物去除液->IPA液—純水—Dry 聚合物去除液->IPA液-純水—Dry 聚合物去除液-> IPA液純水Dry 聚合物去除液βΙΡΑ液->純水—Dry 聚合物去除液—IPA液―純水—Dry 聚合物去除液—^IPA液-^純水—Dry 聚合物去除液~~>IPA液-^ 聚合物去除液—IPA液—-^Dry 聚合物去除液-> —*純水-^Dry 聚合物去除液-> —純水--^Dry 聚合物去除液~>IPA液-^ 聚合物去除液->IPA液-^ —>£)j.y 聚合物去除液— ~^純水--^Dry 聚合物去除液—純水~~>Dry 聚合物去除液->IPA液— 聚合物去除液—IPA液—〜Dry 聚合物去除液―θ純水〜Dry 聚合物去除液-> —純水〜Dry •聚合物去除液—1PA液—^Dry •聚合物去除液4IPA液—^Dry ’聚合物去除液——純水~~~>Dry •聚合物去除液—純水〜Dry (請先閱讀背面之注意事項再填寫本頁) -I ----I--訂----— — 丨 — - I ·No. 17 No. 18 No. 19 Νο · 20 Νο_21 Νο. 22 Νο. 23 ―Pure Water 'Pure Water—Dry > Pure Water- ^ > --Dry ~ > Dry Polymer Removal Solution- > IPA Solution -> Pure Water Dry Polymer Removal Solution- > 1? Eight Liquid- > Pure Water Drv Polymer Removal Solution- > IPA Solution—Pure Water—Dry Polymer Removal Solution- > IPA Solution-Pure Water— Dry Polymer Removal Solution- > IPA Solution Pure Water Dry Polymer Removal Solution βΙΡΑ Liquid- > Pure Water—Dry Polymer Removal Solution—IPA Solution—Pure Water—Dry Polymer Removal Solution— ^ IPA Solution- ^ Pure Water —Dry polymer removal solution ~~ > IPA solution- ^ Polymer removal solution—IPA solution —- ^ Dry polymer removal solution- > — * pure water- ^ Dry polymer removal solution- > —pure water- -^ Dry Polymer Removal Solution ~ > IPA Solution- ^ Polymer Removal Solution- > IPA Solution- ^ — > £) jy Polymer Removal Solution— ~ ^ Pure Water-^ Dry Polymer Removal Solution—Pure Water ~~ &D; Dry polymer removal solution- > IPA solution—Polymer removal solution—IPA solution— ~ Dry polymer removal solution—θ pure water ~ Dry polymer removal solution— > —pure water ~ Dry • Polymerization Product removal solution—1PA solution— ^ Dry • polymer removal solution 4IPA solution— ^ Dry 'polymer Liquid removal—pure water ~~~ &D; Dry • Polymer removal liquid—pure water ~ Dry (Please read the precautions on the back before filling this page) -I ---- I--Order ----— — 丨 —-I ·
504749 A7 B7 五、發明說明（54 ) 表 號碼 内處理室 外處理室 纖濟部智慧財產局員工消費合作社印製504749 A7 B7 V. Description of Invention (54) Form No. Inner Processing Room Outer Processing Room
No.25 No.26 No.27 No.28 No.29 No.30 No.31 No.32 No.33 No.34 No.35 No.36 No.37 No.38 No.39 No.40 No.41 No.42 No.43 No.44 No.45 No.46 No.47 No.48 聚合物去除液~^IPA液·—純水—Dry 聚合物去除液—IPA液—純水— 聚合物去除液-^1 PA液— —Dry 聚合物去除液—IPA液— — 聚合物去除液— —純水—Dry 聚合物去除液— 純水— 聚合物去除液— — —Dry 聚合物去除液— — — 聚合物去除液—IPA液純水—Dry 聚合物去除液—I PA液—純水— 聚合物去除液—IPA液^純水-> Dry 聚合物去除液->1PA液—純水— 聚合物去除液—IPA液— —Dry 聚合物去除液—I PA液—純水-> 聚合物去除液—IPA液— -> D ry 聚合物去除液—IPA液― — 聚合物去除液-聚合物去除液-聚合物去除液-聚合物去除液-聚合物去除液-聚合物去除液-聚合物去除液-聚合物去除液- 純水—> Dry 純水— 純水—Dry 、纯水一'^ —Dry —> -^Drv >抗蝕劑去除液—IPA液—純水—Dry’ "抗#劑去除液—1 PA液―純水—Dry >抗姓劑去除液—I PA液―純水—Dry -抗姓劑去除液—I PA液—純水—Dry -抗#劑去除液—I PA液—純水—Dry ，抗钱劑去除液—I PA液—純水—Dry -抗姓劑去除液—I PA液―純水—Dry -抗姓劑去除液—I PA液—純水—Dry >抗蝕劑去除液->抗蝕劑去除液-，抗li劑去除液->抗姓劑去除液->抗蝕劑去除液--抗触劑去除液->抗触劑去除液->抗触劑去除液->抗触劑去除液->抗蝕劑去除液->抗触劑去除液->抗触劑去除液->抗触劑去除液->抗姓劑去除液->抗蝕劑去除液->抗触劑去除液- 巧PA液- 液- ]PA 液->IPA 液- ]PA 液-dPA 液- ]PA 液--IPA 液- > -^Drx > —Dry •純水—Dry -純水—Dry > —>Dry > —Dry •純水θ Dry -純水—Dry > —>Dry > —Dry \纯水―Dry -純水—Dry > —Dry > —Dry \純水—Dry 純水—Dry -------------裝--------訂---------線 (請先閱讀背面之注意事項再填寫本頁) 從該處理方法No.1〜No.48之中，能予選擇最適宜之 處理方法。 《第10實施態樣，》： 其次，將針對第1 0實施態樣之晶圓處理方法作說明。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 57 504749 A7No. 25 No. 26 No. 27 No. 28 No. 29 No. 30 No. 31 No. 32 No. 33 No. 34 No. 35 No. 36 No. 37 No. 38 No. 39 No. 40 No. 41 No.42 No.43 No.44 No.45 No.46 No.47 No.48 Polymer removal solution ~ ^ IPA solution · —Pure water—Dry Polymer removal solution—IPA solution—Pure water—Polymer removal Liquid-^ 1 PA liquid — —Dry polymer removal liquid —IPA liquid — — Polymer removal liquid — —Pure water —Dry polymer removal liquid —Pure water — Polymer removal liquid — — —Dry polymer removal liquid — — — Polymer Removal Solution—IPA Solution Pure Water—Dry Polymer Removal Solution—I PA Solution—Pure Water—Polymer Removal Solution—IPA Solution ^ Pure Water- > Dry Polymer Removal Solution- > 1PA Solution—Pure Water — Polymer Removal Solution—IPA Solution— —Dry Polymer Removal Solution—I PA Solution—Pure Water— > Polymer Removal Solution—IPA Solution—-> Dry Polymer Removal Solution—IPA Solution— — Polymer Removal Liquid-Polymer Removal Solution-Polymer Removal Solution-Polymer Removal Solution-Polymer Removal Solution-Polymer Removal Solution-Polymer Removal Solution-Polymer Removal Solution-Pure Water— > Dry Pure Water—Pure Water—Dry 、 Pure water one '^ —Dry — >-^ Drv > Removal solution—IPA solution—Pure water—Dry '" Anti # agent removal solution—1 PA solution—Pure water—Dry > Anti-name agent removal solution—I PA solution—Pure water—Dry—Anti-name agent removal solution— I PA liquid—pure water—Dry—anti- # agent removal liquid—I PA liquid—pure water—Dry, anti-money agent removal liquid—I PA liquid—pure water—Dry—anti-agent removal liquid—I PA liquid—pure Water—Dry—Anti-name agent removal liquid—I PA liquid—Pure water—Dry > Resistant removal liquid- > Resistant removal liquid-, Anti-li agent removal liquid- > Anti-name agent removal liquid- > Resistant removal solution--Anti-contact agent removal solution- > Anti-contact agent removal solution- > Anti-contact agent removal solution- > Anti-contact agent removal solution- > Anti-resist solution- > Anti-contact Agent removal solution- > anti-contact agent removal solution- > anti-contact agent removal solution- > anti-name agent removal solution- > resist removal solution- > anti-contact agent removal solution-Qiao PA solution-liquid- ] PA Solution- > IPA Solution-] PA Solution-dPA Solution-] PA Solution-IPA Solution- >-^ Drx > —Dry • Pure Water—Dry -Pure Water—Dry > — > Dry > —Dry • Pure Water θ Dry -Pure Water—Dry > — > Dry > —Dry \ Pure Water—Dry -Pure Water—Dry > —Dry > —Dry \ Pure Water—Dry Pure water—Dry ------------- install -------- order --------- line (please read the precautions on the back before filling this page) From these processing methods No. 1 to No. 48, an optimal processing method can be selected. "Tenth Implementation Aspect": Next, a wafer processing method for the tenth implementation aspect will be described. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) 57 504749 A7
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504749 A7 B7 五、發明說明（56) 表4 號碼内處理室 外處理室 丨亢姓劑去除液~->IPA液—純水—Dry—聚合物去除液—1 PA液 No2抗姓劑去除液〜〗pA液——Dry—聚合物去除液—I pa液 No3抗蝕劑去除液—化八液―-> —聚合物去除液—IPA液 丨充蝕劑去除液—純水—Dry—聚合物去除液―斤八液 No5抗蝕劑去除液4 — —Dry->聚合物去除液—IPA液 No6抗蝕劑去除液〜 一 一—聚合物去除液—1PA液 No7抗姓劑去除液〜IpA液—純水—Dry->聚合物去除液—IPA液 抗姓劑去除液->IPA液—純水—Dry-^聚合物去除液 抗姓劑去除液PA液—纯水——聚合物去除液— 抗姓劑去除液->IPA液——Dry—聚合物去除液->IPA液 抗姓劑去除液4IPA液———聚合物去除液~^IPA液 抗钱劑去除液~~>ΙΡΑ液——Dry—聚合物去除液— 抗姓劑去除液si PA液—一—聚合物去除液->504749 A7 B7 V. Description of the invention (56) Table 4 Number internal treatment outdoor processing room 丨 King name agent removal solution ~-> IPA solution—Pure water—Dry—Polymer removal solution—1 PA solution No2 anti-name agent removal solution ~〗 PA liquid——Dry—Polymer removal liquid—I pa liquid No3 resist removal liquid—Chemical eight liquid —- >> Polymer removal liquid—IPA liquid 丨 Etchant removal liquid—Pure water—Dry— Polymer Removal Solution-No. 5 Resist Removal Solution No. 4 — Dry-> Polymer Removal Solution-IPA Solution No. 6 Resist Removal Solution ~ One-Polymer Removal Solution-1 PA Solution No. 7 Anti-Residue Removal Liquid ~ IpA Liquid—Pure Water—Dry-> Polymer Removal Solution—IPA Liquid Anti-Surface Agent Removal Solution-> IPA Solution—Pure Water—Dry- ^ Polymer Removal Solution ——Polymer Removal Solution—Anti-Name Agent Removal Solution- > IPA Solution——Dry—Polymer Removal Solution- > IPA Solution Agent removal solution ~~ > IPA solution——Dry—polymer removal solution—anti-agent removal solution si PA solution—one—polymer removal solution- >
NolNol
No8 No9 NolO Noll Nol2 Nol3 Nol4 Nol5 Nol6 Nol7 Nol8 Nol9 N〇20 號碼如- 抗蝕劑去除液4 抗姓劑去除液 抗姓劑去除液4 抗蝕劑去除液4 抗蝕劑去除液4 抗li劑去除液— 抗蝕劑去除液一 — 一 内處理室 ，纯水Dry->聚合物去除液·^丨pa液 ，純水Dry->聚合物去除液— ，純水——聚合物去除;夜 > —Dry—聚合物去除液—I pA液 > ——聚合物去除液->1PA液 > ->Dry->聚合物去除液 > ——聚合物去除液 經％部智患財產局員工消費合作社印製No8 No9 NolO Noll Nol2 Nol3 Nol4 Nol5 Nol6 Nol7 Nol8 Nol9 N〇20 Numbers such as-resist remover 4 anti-agent remover anti-agent remover 4 resist remover 4 resist remover 4 anti-li Removal liquid—resist removal liquid one—one internal processing chamber, pure water Dry- > polymer removal liquid · ^ 丨 pa liquid, pure water Dry- > polymer removal liquid—, pure water—polymer removal ; Night> —Dry—Polymer Removal Solution—I pA Solution> ——Polymer Removal Solution-> 1PA Solution>-> Dry- > Polymer Removal Solution>- Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry
No21 No22 No23 No24 No25 No26 No27 No28 No29 N〇30 No31 號碼 No32 抗<4劑去除液$1ρΑι_ 劑去除液叫pA液一 抗蝕劑去除液—_ 抗蝕劑去除液—一 抗蝕劑去除液叫PA液-抗#劑去除液41PA液一 抗姓劑去除液~-IPA液_ 抗姓劑去除液—IPA液-抗蝕劑去除液—— 抗蝕劑去除液-> - 除液一 内處理室 抗蝕劑去除液— 外處理室 内處理室 -------------裝-----^---訂---------線(請先閱讀背面之注意事項再填寫本頁) 純水—Dry 純水 純水—Dry 純水— 純水—Dry 純水— 純水— 一 Dry 純水一 純水—Dry 純水-> 聚合物去除液—1PA液 4聚合物去除液—IPA液 4聚合物去除液—IPA液 4聚合物去除液—IPA液 4聚合物去除液-^IPA液 4聚合物去除液—IPA液 1聚合物去除液— 4聚合物去除液-> 4聚合物去除液-> 1PA液 4聚合物去除液 4聚合物去除液-> 外處理室 純水- >聚合物去除液—1PA液 本紙張尺度適用中國國家標準（CNS)A4規格⑽x 297公爱） 外處理室 *純水〜Dry '純水〜Dry * 純水 Dry ★純水~~>Dry ^ 一 Dry ^ —Dry ^純水―Dry ^ Dry ★純水~~> Dry ^屯水〜Dr> ~ ___ 外處理室 ^Dr; 59 504749 A7 B7 五、發明說明（57 ) 表5 號碼 經濟部智慧財產局員工消費合作社印製No21, No22, No23, No24, No26, No26, No27, No28, No29, No29, No32, No. 4 anti-removal solution $ 1ρΑι_ The agent removal solution is called pA solution-resist removal solution—_ resist removal solution—a resist removal solution Called PA fluid-Anti # agent removal solution 41PA fluid-Anti-agent removal fluid ~ -IPA fluid_ Anti-surgical agent removal fluid—IPA fluid-Resist removal fluid-Resist removal fluid- > Internal processing room resist removal solution — external processing room processing room ------------- install ----- ^ --- order --------- line (please Read the precautions on the back before filling this page) Pure Water—Dry Pure Water—Dry Pure Water—Pure Water—Dry Pure Water—Pure Water—One Dry Pure Water—Pure Water—Dry Pure Water-> Polymer Removal liquid—1PA liquid 4 polymer removal liquid—IPA liquid 4 polymer removal liquid—IPA liquid 4 polymer removal liquid—IPA liquid 4 polymer removal liquid— ^ IPA liquid 4 polymer removal liquid—IPA liquid 1 polymer removal Liquid — 4 polymer removal liquid —> 4 polymer removal liquid —> 1PA liquid 4 polymer removal liquid 4 polymer removal liquid —> external processing room pure water — &polymer; polymer removal liquid — 1PA liquid paper Standards apply to Chinese national standards (CNS) A4 specifications ⑽ x 297 公 爱) Outer processing room * Pure water ~ Dry 'Pure water ~ Dry * Pure water Dry ★ Pure water ~~ &D; Dry ^ -Dry ^ —Dry ^ Pure water-Dry ^ Dry ★ Pure Water ~~ > Dry ^ Tunshui ~ Dr > ~ ___ Outer processing room ^ Dr; 59 504749 A7 B7 V. Description of the invention (57) Table 5 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
No33 No34 No35 No36 No37 No38 No39 N〇40 No41 No42 No43 No44 No45 No46 No47 No48 No49 N〇50 No51 No52 號碼 No53 No54 No55 No56 No57 No58 No59 N〇60 No61 No62 No63 號碼 No64 聚合物去除液~__>1?八液_ 聚合物去除液1 PA液一 聚合物去除液IΡΑ Ί 聚合物去除液_ 聚合物去除液— 聚合物去除液4 _ 聚合物去除液PA液_ 聚合物去除液4IPAI- 聚合物去除液IPA氣- 聚合物去除液~^IPA 聚合物去除液->IPA液- 聚合物去除液θΙΡΑ液- 聚合物去除液~~^ΙΡΑ液- 聚合物去除液— 聚合物去除液4 一 聚合物去除液θ _ 聚合物去除液4 — 聚合物去除液_ 聚合物去除液_ 聚合物去除液_ — -^=^=====^=== 内處理室 聚合物去除液〜1PA液— 聚合物去除液〜丨PA液- 聚合物去除液—— 聚合物去除液4 _ 聚合物去除液叫PA液~ 聚合物去除液液- 聚合物去除液〜ΙΡΑ液— 聚合物去除液1ΡΑ液- 聚合物去除液-> - 聚合物去除液- 聚合物去除液—- 聚合物去除液一 内處理室 '純水—Dry—抗蝕劑去除液—1PA液 > —Dry—抗蝕劑去除液—IPA液 —抗蝕劑去除液—IPA液 純水抗姓劑去除液—ιρΑ液 —Dry—抗蝕劑去除液—ιρΑ液 ——抗蝕劑去除液—IPA液 '純水~>Dry—抗蝕劑去除液—ipA液 '純水—Dry-^抗蝕劑去除液— >純水——抗姓劑去除液— > —Dry-^抗蝕劑去除液—ιρΑ液 ^ —抗蝕劑去除液—IPA液 > —Dry-^抗姓劑去除液— ———抗蝕劑去除液-> 純水—Dry—抗姓劑去除液—ιρΑ液 純水-^Dry-^抗蝕劑去除液— 純水——抗|4劑去除液— —Dry—抗蝕劑去除液-> IPA液 ——抗蝕劑去除液—1PA液 —Dry—抗蝕劑去除液— 抗li劑去除液― 外處理室 純水—Dry 名屯水一> 純水—Dry 純水一 純水-> Dry 純水一 純水— —Dry 純水― 純水-> Dry 系屯水一> 外處理室 内處理室 外處理室 •純水 叱純水 迦純水 迦純水 純水 _屯水 m 純水 迓>純水 Cry _屯水 如純水 a〇 _屯水 迦純水 a〇 Dr\ _屯水 _屯水 純水- 抗蝕劑去除液—1PA液-—抗姓劑去除液—1PA液-—抗蝕劑去除液-> 1PA液-—抗姓劑去除液—丨PA液一 —抗钱劑去除液—IPA液-—抗飯劑去除液—IPA液-抗蝕劑去除液— 抗蝕劑去除液—— —抗敍劑去除液—lpA液— —抗蝕劑去除液—— •抗蝕劑去除液—一 内處理室 >抗姓劑去除液·^丨PA洛 ---— 處理室 一^系屯水一^ —系屯水 _屯水一 _屯水— ary — 以y ―、 屯水— _屯水— 迓y — 吗屯水— 如:純水— Dto里室 — II ΙΓ — — ^* — — — 1— Aw I I I l· I I I ^ ---I--— I* I (請先閱讀背面之注意事項再填寫本頁) 60 經濟部智慧財產局員工消費合作社印製 504749 五、發明說明（58) 由是從處理方法No. 1〜Νο·64中能予選擇最適宜之處 理方法。 而本發明不僅為銅配線，例如，製造習知之鋁（A1)配 線鈦（Ti)配線、鎢（w)配線、钽（Ta)配線等之時亦可適用。 又’將上述晶圓（W)作濕式處理之裝置，例如，將Dip方 式（在填充於槽内之藥液中使基板予以浸潰）之處理槽或噴 矛务噴噶方式之處理槽作多數排列之多槽式的濕式處理裝置 等亦可以。又，不限定於上述晶圓（w)，例如，lCD基板、 CD基板、印刷基板、陶瓷基板等作濕式處理之時亦可適 用。 如上述說明，對於本發明係在於具有，對被處理體供 給處理液而使處理液予以接觸在被處理體之表面的工程以 及將接觸在上述被處理體之表面的處理液予以去除之工 程’並將上述工程依序作反覆進行。又具有，對被處理體 供給處理液且將處理液予以接觸在被處理體之表面的工程 以及對上述被處理體之表面噴射處理液而將接觸於被處理 體之表面的處理液予以置換為新規之處理液的工程，並將 上述工程依序予以反覆進行。 並且，對於本發明係在於具備欲予保持被處理體之保 持裝置，對上述被處理體供給處理液之處理液供給裝置、 將接觸在上述處理液表面之處理液予以去除之處理液去除 裝置以及至少亦可控制依序反覆進行供給上述處理液之定 時（應時）與去除處理液之定時的上述處理液供給裝置之供 給定時，以及上述處理液去除裝置之去除定時之用的控制 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -----^---^--------I (請先閱讀背面之注意事項再填寫本頁) 61 五、發明說明（59) 裝置。 由於此，能將接觸於被處理體表面作化學反應而反應 性變成較弱（反應速度變成較遲緩）之處理過的處理液，頻 繁置換為反應性強之新規的處理液，因此，可圖處理效率 之k升同4，依較少之處理液而能進行所望之液處理。 又於本發明係將在半導體製造的多層配線工程上 之基板的表©所錢之多層膜之中的屏㈣，與在接觸孔 之土所形成之側壁保護膜，反覆予以進行處理液之接觸與 去除，就可予以去除。 由於此，不必將屏罩膜作乾式電鍍處理，且於進行 乾式電鍍處理之時所發生之電漿對多層膜之中的金屬膜之 不良影響，或因氧化所起之損傷的不良影響等就能予防 止。其結果，例如，若金屬膜為銅膜，即，可製造低電阻 且高品質之銅配線。而且不必要將屏罩膜從作乾式電鍍裝 置移換基板至進行聚合物去除之裝置，乃於同一裝置内作 連串之濕式處理，因此，能可圖處理時間之縮短。 圖面之簡單說明： 第1圖係表示本發明第1實施態樣有關之液處理裝置的 概略性構成圖。 第2A圖、第2B圖、第2C圖、第2D圖係表示按照順序 之藥液供給工程及藥液去除工程之概略性側面圖。 第3圖係表示於第丨實施態樣之藥液供給工程及藥液去 除工程之步驟的流程圖。 第4A圖、第4B圖、第4C圖、第4D圖係按照順序予以 504749No33 No34 No35 No36 No37 No38 No39 No. No. 40 No41 No42 No43 No44 No45 No46 No47 No48 No49 No. 50 No51 No52 No. No53 No54 No55 No56 No57 No58 No58 No59 No. 60 No61 No62 No63 No. 64 Polymer Removal Solution ~ __> Liquid_ polymer removal liquid 1 PA liquid-polymer removal liquid IPA Ί polymer removal liquid _ polymer removal liquid — polymer removal liquid 4 _ polymer removal liquid PA liquid _ polymer removal liquid 4IPAI- polymer removal liquid IPA Gas-Polymer Removal Solution ~ ^ IPA Polymer Removal Solution-> IPA Solution-Polymer Removal Solution θΙΡΑ liquid-Polymer Removal Solution ~~ ^ ΙΡΑ Solution-Polymer Removal Solution-Polymer Removal Solution 4-Polymer Removal液 θ _ Polymer removal solution 4 — Polymer removal solution _ Polymer removal solution _ Polymer removal solution _ —-^ = ^ ========== Inner processing chamber polymer removal solution ~ 1PA liquid — polymerization Material removal solution ~ 丨 PA solution-polymer removal solution-polymer removal solution 4 _ polymer removal solution is called PA solution ~ polymer removal solution-polymer removal solution ~ ΙΡΑ solution-polymer removal solution 1ΡΑ solution-polymerization Product removal solution- >-polymer removal solution-polymer removal solution -Polymer Removal Solution—Inside the processing chamber 'Pure water—Dry—Resistant removal solution—1PA solution> —Dry—Resistant removal solution—IPA solution—Resistant removal solution—IPA solution Removal solution—ιρΑ 液 —Dry—Resistant removal solution—ιρΑ—Resistant removal solution—IPA solution 'pure water ~> Dry—Resistant removal solution—ipA solution' pure water—Dry- ^ anti Etchant Removal Solution — > Pure Water——Anti-Residual Agent Removal Solution — > —Dry- ^ Resistant Removal Solution—ιρΑ 液 ^ —Resistant Removal Solution—IPA Solution > —Dry- ^ Anti-surname Agent Removal solution — ——— Resistant removal solution— > Pure water—Dry—Anti-agent removal solution—ιρΑ 液 纯水-^ Dry- ^ Resistant removal solution—Pure water—Anti | 4 agent removal solution — —Dry—resist removal solution— > IPA solution—resist removal solution—1PA solution—Dry—resist removal solution—anti-li agent removal solution—external processing room pure water—Dry Mingtun Shuiyi > Pure water—Dry pure water—Pure water— > Dry pure water—Pure water—Dry pure water—Pure water— > Dry system Tunshui one > Outside treatment indoor treatment Outdoor treatment room • Pure water pure Water water pure water water pure Water pure water_tunshui m pure water 迓 > pure water Cry _tunshui like pure water a〇_tunshuijia pure water a〇Dr \ _tunshui_tunshui pure water-1PA solution -—Anti-name agent removal solution—1PA solution——Resistant removal solution-> 1PA solution——Anti-name agent removal solution— 丨 PA solution—Anti-antrum agent removal solution—IPA solution——Anti-rice agent removal solution —IPA liquid—resist removing liquid—resist removing liquid ——— anti-slip agent removing liquid—lpA liquid——resist removing liquid— • resist removing liquid—an internal processing chamber > anti surname Agent removal liquid ^ 丨 PA Luo ----- treatment room 1 ^ Department of Tunshui 1 ^-Department of Tunshui_tunshui 1_tunshui — ary — Take y ―, Tunshui — _tunshui — 迓 y —? Tunshui — eg: pure water — Dto inside room — II ΙΓ — — ^ * — — — 1— Aw III l · III ^ --- I --— I * I (Please read the precautions on the back before filling in this Page) 60 Printed by the Intellectual Property Bureau, Consumer Affairs Cooperative of the Ministry of Economic Affairs 504749 V. Description of Invention (58) The most suitable treatment method can be selected from the treatment methods No. 1 to No. 64. The present invention is applicable not only to copper wiring, but also to manufacturing conventional aluminum (A1) wiring titanium (Ti) wiring, tungsten (w) wiring, and tantalum (Ta) wiring. Also, a device for performing the wet processing on the wafer (W), for example, a processing tank in which a Dip method (a substrate is immersed in a chemical solution filled in the tank) or a processing tank in a spray gun method A multi-tank type wet processing apparatus or the like may be used. In addition, it is not limited to the above-mentioned wafer (w). For example, a CD substrate, a CD substrate, a printed substrate, a ceramic substrate, or the like may be applied when wet processing is performed. As described above, the present invention relates to a process of supplying a treatment liquid to a treatment object and bringing the treatment liquid into contact with the surface of the treatment object, and a process of removing the treatment liquid contacting the surface of the treatment object. The above-mentioned projects are carried out in sequence. It also has a process of supplying a treatment liquid to a treatment object and contacting the treatment liquid on the surface of the treatment object, and spraying the treatment liquid on the surface of the treatment object to replace the treatment liquid contacting the surface of the treatment object with New regulations for the treatment of liquids, and the above-mentioned works are carried out in sequence. Further, the present invention relates to a holding device for holding a processing object, a processing liquid supply device for supplying a processing liquid to the processing object, a processing liquid removing device for removing a processing liquid contacting the surface of the processing liquid, and At least it is also possible to control the supply timing of the processing liquid supply device (in time) and the processing liquid supply device removal timing in sequence, and to control the paper size for the removal timing of the processing liquid removal device. Applicable to China National Standard (CNS) A4 (210 X 297 mm) ----- ^ --- ^ -------- I (Please read the notes on the back before filling this page) 61 Five , Description of invention (59) device. Because of this, the treated treatment liquid that is in contact with the surface of the object to be chemically reacted and becomes weaker (the reaction rate becomes slower) can be frequently replaced with a new, more reactive treatment solution. The k liter of the treatment efficiency is the same as 4, and the desired liquid treatment can be performed with less treatment liquid. In the present invention, the screen of the multi-layer film of the substrate on the multilayer wiring process of semiconductor manufacturing is contacted with the side wall protective film formed in the soil of the contact hole, and the treatment liquid is repeatedly contacted. And removal, it can be removed. Because of this, it is not necessary to perform dry plating on the screen film, and the adverse effect of the plasma on the metal film in the multilayer film or the adverse effect of damage due to oxidation, etc., which occurs when the dry plating process is performed Can be prevented. As a result, for example, if the metal film is a copper film, a copper wire having a low resistance and high quality can be manufactured. Moreover, it is not necessary to change the screen film from a dry electroplating device to a substrate to a polymer removal device, but to perform a series of wet processing in the same device, so that the processing time can be shortened. Brief description of the drawings: Fig. 1 is a schematic configuration diagram showing a liquid processing apparatus according to a first embodiment of the present invention. Figures 2A, 2B, 2C, and 2D are schematic side views showing the chemical liquid supply process and the chemical liquid removal process in order. Fig. 3 is a flowchart showing the steps of the chemical liquid supply process and the chemical liquid removal process in the first aspect. Figures 4A, 4B, 4C, and 4D are given in sequence 504749
五、發明說明（60) 經· 濟 部 智 財 產 局 、，v m 費 合 作 社 印 製 表示IPA供給工程及IpA去除工程之概略性側面圖。 第5圖係表示上述IPA供給工程及IPA去除工程之步驟 的流程圖。 第6圖係表示第1實施態樣上之液處理的步驟之流程圖。 第7A圖、第7B圖、第7C圖、第7D圖係依序表示本發 明第2實施態樣有關之藥液供給工程及藥液去除工程之概 略性側面圖。 第8圖係表示第2實施態樣上之藥液供給工程及藥液去 除工程之步驟的流程圖。 第9A圖、第9B圖、第9C圖、第9D圖係依序表示本發 明第3實施態樣有關之藥液供給工程及藥液去除工程之概 略性側面圖。 第10圖係表示第3實施態樣上之藥液供給工程及藥液 去除工程之步驟的流程圖。 第11A圖、第11B圖、第11C圖、第11D圖，係依序表 示本發明第4實施態樣有關之藥液供給工程及藥液去除工 程之概略性側面圖。 第12圖係表示第4實施態樣上之藥液供給工程及藥液 去除工程之步驟的流程圖。 第13A圖、第13B圖、第13C圖、第13D圖係將本發明 第5實施態樣有關之藥液供給工程及藥液去除工程依序予 以表示之概略性側面圖。 第14圖係表示第5貫施態樣上之藥液供給工程及藥液 去除工程之步驟的流程圖。 -------------裂-----·1---訂---------線 (請先閱讀背面之注意事項再填寫本頁)V. Description of the invention (60) Printed by the Intellectual Property Office of the Ministry of Economy, Economics, and Trademark Corporation, showing a schematic side view of the IPA supply project and the IpA removal project. Fig. 5 is a flowchart showing the steps of the above-mentioned IPA supply process and IPA removal process. Fig. 6 is a flowchart showing the steps of the liquid treatment in the first embodiment. FIG. 7A, FIG. 7B, FIG. 7C, and FIG. 7D are schematic side views sequentially showing a medicinal solution supply process and a medicinal solution removal process related to the second embodiment of the present invention. Fig. 8 is a flowchart showing the steps of the chemical liquid supply process and the chemical liquid removal process in the second embodiment. Figures 9A, 9B, 9C, and 9D are schematic side views sequentially showing a medicinal solution supply process and a medicinal solution removal process related to the third embodiment of the present invention. Fig. 10 is a flowchart showing the steps of the chemical liquid supply process and the chemical liquid removal process in the third embodiment. 11A, 11B, 11C, and 11D are schematic side views sequentially showing a chemical liquid supply process and a chemical liquid removal process related to the fourth embodiment of the present invention. Fig. 12 is a flowchart showing the steps of the chemical liquid supply process and the chemical liquid removal process in the fourth embodiment. Figures 13A, 13B, 13C, and 13D are schematic side views showing the chemical liquid supply process and the chemical liquid removal process related to the fifth embodiment of the present invention in order. Fig. 14 is a flowchart showing the steps of the chemical liquid supply process and the chemical liquid removal process on the fifth embodiment. ------------- Crack ----- · 1 --- Order --------- Line (Please read the notes on the back before filling this page)
504749 A7 B7 五、發明說明（61) 第15圖係表示對於本發明第6實施態樣有關之藥液供 給部及藥液去除部之概略性透視圖。 第16A圖、第16B圖係表示第6實施態樣之藥液供給工 程及藥液去除工程之概略性側面圖。 第17圖係表示第6實施態樣上之藥液供給工程及藥液 去除工程之步驟的流程圖。 第18圖係表示本發明第7實施態樣有關之處理裝置之 概略性構成圖。 第19圖係表示第7實施態樣之處理裝置的要部截面 圖。 第20圖係表示於第7實施態樣上之晶圓的收取狀態之 概略性截面圖。 第21圖係表示於第7實施態樣上之晶圓於轉動體之施 受狀態的概略性載面圖。 第22圖係表示於第7實施態樣之内艙室的藥液處理、 藥液去除處理之概略性截面圖。 第23圖係表示於第7實施態樣之外艙室的洗滌處理、 乾燥處理之概略性載面圖。 經濟部智慧財產局員工消費合作社印製 -----一丨 l·!%丨 — (請先閱讀背面之注意事項再填寫本頁) •線· 第24圖係表示於第7實施態樣之配管系統的概略性配 管圖。 第25圖係表示適用第7實施態樣有關之處理裝置的洗 淨、乾燥處理裝置之概略性平面圖。 第26圖係表示將本發明之第8〜第1〇實施態樣有關之 晶圓處理方法，以最適宜進行之濕式處理裝置的截面說明 本紙張尺度適用中國國家標準（CNS)A4規格（210 x 297公釐） 64 A7 A7 經濟部智象財產局員工消費合作社印製 — B7___ 五、發明說明（62) 圖，乃在外處理槽之外部伸出内處理槽之狀態。 第27圖係表示第26圖之濕式處理裝置的外處理槽之内 部構造的說明圖。 第28圖係表示將本發明之第8〜第1〇實施態樣有關之 晶圓處理方法，以最適宜進行之濕式處理裝置的截面說明 圖，乃將内處理槽引入於外處理槽之内部的狀態。 第29圖係表示第28圖之濕式處理裝置的外處理槽及内 處理槽之内部構造的說明圖。 第30A圖、第30B圖、第3〇c圖係將本發明之第8實施 恶樣有關之晶圓處理方法的工程依序予以說明之工程說明 圖。 第3 1A圖、第31B圖係說明供給未反應之抗蝕劑·聚 合物去除液之工程及去除反應過之抗蝕劑·聚合物去除液 之工程的工程說明圖。 第32A圖、第32B圖、第32C圖、第32D圖係將本發明 之第9貫施態樣有關之晶圓處理方法的工程依序予以說明 之工程說明圖。 第33A圖、第33B圖、第33C圖、第33D圖係將本發明 之第9實施態樣有關之其他晶圓處理方法的工程依序予以 說明之工程說明圖。 第34圖係表示在習知之處理方法上的晶圓表面上之處 理液的狀態之概略性截面圖。 第35A圖、第35B圖、第35C圖、第35D圖、第35E圖係將 習知之晶圓處理方法之工程依序予以說明之工程說明圖。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） ^-----^---^---------^ (請先閱讀背面之注意事項再填寫本頁) 504749 A7 B7_ 五、發明說明（63) 元件標號對照 經濟部智慧財產局員工消費合作社印製 1…旋轉（自旋)夾頭 7…排液口 2、22、406···馬達 8…排氣口 3…處理液供給機構 9a、9b…移動機構 3A、50···藥液供給機構 10…搬送夾頭 3B、60···ΙΡΑ供給機構 20…處理裝置 3C···藥液去除機構 21…轉動體(轉子） 3a、51…藥液供給噴嘴 21a…第1旋轉板 3b、58···藥液供給源 21b…第2旋轉板 3c、53…藥液供給管路 22a…驅動軸(馬達） 3d、54、54A···藥液供給泵 22b…耦合(聯軸）器 3e、4e、55、55A、85…過濾器 23···内艙室（第1處理室） 3f、4g、56…溫度控制器 24···外艙室（第2處理室) 3g、4f、57、84…開閉閥 25…内筒體 3h、3卜"％噴射噴嘴 26···外筒體 3j…藥液吸引噴嘴 27…第1汽筒（圓筒） 4···Ν2供給機構 28···第2汽筒 4a…Ν2供給噴嘴 29···晶圓施受手臂 41ν··Ν2供給源 31…固定保持棒 4c…Ν2供給管路 32…壓制棒 4d…流量控制器 33···轴承 5、30…控制機構、CPU 34···第1固定壁 6…杯子 35…曲折密封 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 66 504749 A7 B7 五、發明說明（64) Μ 濟· 部 智 財 產 局 員 工 費 合 作 社 印 製 36…固定筒體 52c…溫度調整熱絲 37…冷卻機構 61…溶劑供給部 3 7a···循環式冷卻管 61α···ΙΡΑ供給槽 37b···冷卻水供給管 61b-IPA循環供給槽 37c···熱交換器 62···ΙΡΑ供給管路 38…第2固定壁 63···ΙΡΑ供給閥 39…裝置側壁 64···ΙΡΑ供給源 40a···第1密封構件 70…洗滌液供給機構 40b···第2密封構件 71…純水供給噴嘴 40c···第3密封構件 72…純水供給源 40d···第4密封構件 73···純水供給管路 40e···第5密封構件 74…純水供給泵 41、440…第1排液埠口 75…純水供給閥 42、441…第1排液管 80…乾燥氣體供給機構 43、444…第1排氣埠口 81…乾燥氣體供給喷嘴 44、445…第1排氣管 82…乾燥氣體供給源(Ν2) 45、442…第2排液埠口 83…乾燥氣體供給管路 46、443…第2排液管 86〜Ν2溫度控制器 47…比電阻計 87…切換閥 48、446…第2排氣埠口 88…分岐管路 49、447…第2排液管 89···Ν2閘刀噴嘴 52…藥液供給部 90…循環管路 52a…藥液供給槽 101、201…銅膜 52b…藥液循環供給槽 102、202”.SiN膜 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 67 504749 A7 B7 發明說明（65 ) 103、203···低-k膜 431…吐出口 104、204···光抗蝕膜 432…吐出部 105、205···接觸孔 433…吐出部(N2氣體） 106、206···側壁保護膜 501…處理液 401…濕式處理裝置 503…晶圓表面 402…側壁 505、W···晶圓 403…筒框 610…托架（載置架） 404…外處理槽 620···搬入·搬出部 404a…外處理槽右側面 621…托架搬入部 405…内處理槽 622…托架搬出部 407、21A…旋轉軸 630…處理部 409…轉動體部 640…介面部 410…保持（支撐)構件 650…托架庫 420…外處理室 660···托架洗淨器 421…吐出口 670…托架載置台 422…吐出部 680…托架搬送機構 430…内處理室 690···搬送路 (請先閱讀背面之注意事項再填寫本頁) § 訂----------線！ 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 68504749 A7 B7 V. Description of the Invention (61) Figure 15 is a schematic perspective view showing a medicinal solution supplying section and a medicinal solution removing section related to the sixth embodiment of the present invention. Figures 16A and 16B are schematic side views showing a chemical liquid supply process and a chemical liquid removal process according to a sixth embodiment. Fig. 17 is a flowchart showing the steps of the chemical liquid supply process and the chemical liquid removal process in the sixth embodiment. Fig. 18 is a schematic configuration diagram showing a processing apparatus according to a seventh embodiment of the present invention. Fig. 19 is a sectional view of a main part of a processing apparatus according to a seventh embodiment. Fig. 20 is a schematic cross-sectional view showing a state of picking up a wafer in the seventh embodiment. Fig. 21 is a schematic cross-sectional view showing a state in which a wafer is received on a rotating body in the seventh embodiment. Fig. 22 is a schematic cross-sectional view showing a chemical solution treatment and a chemical solution removal process in the inner compartment of the seventh embodiment. Fig. 23 is a schematic plan view showing a washing process and a drying process of a cabin other than the seventh embodiment. Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs ----- 一 丨 l ·!% 丨 — (Please read the precautions on the back before filling this page) • Line · Figure 24 shows the 7th implementation A schematic piping diagram of the piping system. Fig. 25 is a schematic plan view showing a cleaning and drying treatment device to which the treatment device according to the seventh embodiment is applied. FIG. 26 shows the wafer processing method related to the eighth to tenth embodiments of the present invention, and the cross-section of the most suitable wet processing device is used to explain. (210 x 297 mm) 64 A7 A7 Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs — B7___ V. Description of the Invention (62) The picture shows the state where the inner processing tank is extended outside the outer processing tank. Fig. 27 is an explanatory view showing an internal structure of an outer processing tank of the wet processing apparatus of Fig. 26; FIG. 28 is a cross-sectional explanatory diagram showing the most suitable wet processing device for the wafer processing method related to the eighth to tenth embodiments of the present invention. The inner processing tank is introduced into the outer processing tank. Internal state. Fig. 29 is an explanatory view showing the internal structure of an outer processing tank and an inner processing tank of the wet processing apparatus of Fig. 28; Figures 30A, 30B, and 30c are engineering illustrations that sequentially explain the processes of the wafer processing method related to the eighth embodiment of the present invention. Figures 31A and 31B are process diagrams illustrating the process of supplying the unreacted resist / polymer removing solution and the process of removing the reacted resist / polymer removing solution. FIG. 32A, FIG. 32B, FIG. 32C, and FIG. 32D are engineering explanatory diagrams which sequentially explain the processes of the wafer processing method related to the ninth embodiment of the present invention. Figures 33A, 33B, 33C, and 33D are engineering diagrams that sequentially explain the processes of other wafer processing methods related to the ninth embodiment of the present invention. Fig. 34 is a schematic cross-sectional view showing a state of a liquid on a wafer surface in a conventional processing method. Figure 35A, Figure 35B, Figure 35C, Figure 35D, and Figure 35E are engineering diagrams that sequentially explain the engineering of the conventional wafer processing method. This paper size applies to China National Standard (CNS) A4 (210 X 297 mm) ^ ----- ^ --- ^ --------- ^ (Please read the notes on the back before filling (This page) 504749 A7 B7_ V. Description of the invention (63) The component numbers are printed on the basis of the employee's consumer cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs 1 ... Rotary (spin) chuck 7 ... Drain port 2, 22, 406 ... motor 8 ... exhaust port 3 ... treatment liquid supply mechanisms 9a, 9b ... moving mechanisms 3A, 50 ... medicine solution supply mechanism 10 ... carrying chucks 3B, 60 ... IPA supply mechanism 20 ... treatment device 3C ... medicine solution Removal mechanism 21 ... Rotating body (rotor) 3a, 51 ... Medicine liquid supply nozzle 21a ... First rotary plate 3b, 58 ... Medicine liquid supply source 21b ... Second rotary plate 3c, 53 ... Medicine liquid supply line 22a ... Drive shaft (motor) 3d, 54, 54A ... Medical fluid supply pump 22b ... Coupling (coupling) devices 3e, 4e, 55, 55A, 85 ... Filter 23 ... Internal chamber (first processing chamber) 3f , 4g, 56 ... Temperature controller 24 ... Outer compartment (second processing chamber) 3g, 4f, 57, 84 ... On-off valve 25 ... Inner cylinder 3h, 3b "% injection nozzle 26 ... Outer cylinder Body 3j ... chemical liquid suction nozzle 27 ... first cylinder (cylinder) 4 ... N2 supply mechanism 28 ... second cylinder 4a ... N2 supply nozzle 29 ... wafer receiving arm 41v ... N2 supply source 31 ... Fixed holding rod 4c ... N2 supply line 32 ... Pressed rod 4d ... Flow controller 33 ... Bearings 5, 30 ... Control mechanism, CPU 34 ... First fixing wall 6 ... Cup 35 ... Zigzag seal (please first Read the notes on the reverse side and fill in this page) This paper size applies the Chinese National Standard (CNS) A4 (210 X 297 mm) 66 504749 A7 B7 V. Description of the invention (64) Μ Economic and social affairs staff fee cooperative Printing 36 ... Fixed tube 52c ... Temperature adjusting hot wire 37 ... Cooling mechanism 61 ... Solvent supply unit 3 7a ... Circular cooling pipe 61α ... IPA supply tank 37b ... Cooling water supply pipe 61b-IPA circulation Supply tank 37c ... Heat exchanger 62 ... IPA supply line 38 ... 2nd fixed wall 63 ... IPA supply valve 39 ... Device side wall 64 ... IPA supply source 40a ... First seal member 70 ... washing liquid supply mechanism 40b ... 2nd sealing member 71 ... pure water supply Nozzle 40c ... 3rd sealing member 72 ... Pure water supply source 40d ... 4th sealing member 73 ... Pure water supply line 40e ... 5th sealing member 74 ... Pure water supply pumps 41, 440 ... 1st liquid discharge port 75 ... Pure water supply valves 42, 441 ... 1st liquid discharge pipe 80 ... Dry gas supply mechanism 43, 444 ... 1st exhaust port 81 ... Dry gas supply nozzles 44, 445 ... 1st line Air pipe 82 ... Dry gas supply source (N2) 45, 442 ... Second liquid discharge port 83 ... Dry gas supply line 46, 443 ... Second liquid pipe 86 ~ N2 temperature controller 47 ... Specific resistance meter 87 ... Switching valves 48, 446 ... Second exhaust port 88 ... Branch lines 49, 447 ... Second discharge pipe 89 ... N2 gate knife nozzle 52 ... Chemical liquid supply unit 90 ... Circulation line 52a ... Chemical liquid supply Tanks 101, 201 ... Copper film 52b ... Chemical liquid circulation supply tanks 102, 202 ". SiN film (please read the precautions on the back before filling this page) This paper size applies to China National Standard (CNS) A4 (210 X 297) (Mm) 67 504749 A7 B7 Description of the invention (65) 103, 203 ... Low-k film 431 ... Ejection port 104, 204 ... Photoresist film 432 ... Ejection section 105, 205 ... Contact hole 433 ... Ejection part (N2 gas) 106, 206 ... Side wall protective film 501 ... Processing liquid 401 ... Wet processing device 503 ... Wafer surface 402 ... Side wall 505, W ... Crystal Circle 403 ... Cylinder frame 610 ... Bracket (mounting rack) 404 ... Outer processing tank 620 ··· Inward / outward section 404a ... Right side surface of outer processing tank 621 ... Inward processing section 405 ... Inner processing tank 622 ... Out of bracket Parts 407, 21A ... Rotary shaft 630 ... Processing part 409 ... Rotating body part 640 ... Interface part 410 ... Holding (supporting) member 650 ... Bag library 420 ... Outer processing room 660 ... Bracket cleaner 421 ... Eject 670 ... carriage mounting table 422 ... discharge unit 680 ... carriage conveying mechanism 430 ... inner processing chamber 690 ... conveying path (please read the precautions on the back before filling this page) § Order -------- --line! Printed by the Employees' Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is sized for China National Standard (CNS) A4 (210 X 297 mm) 68
Claims (1)
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|---|---|---|---|
| JP18419299 | 1999-06-29 | ||
| JP11184441A JP2001015480A (en) | 1999-06-29 | 1999-06-29 | Method for treating substrate |
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| KR (1) | KR20010039694A (en) |
| DE (1) | DE10031605A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| US8793898B2 (en) | 2007-05-23 | 2014-08-05 | Semes Co., Ltd. | Apparatus and method for drying substrates |
| TWI491432B (en) * | 2012-02-27 | 2015-07-11 | Tokyo Electron Ltd | Liquid processing device and liquid processing method |
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| KR100757850B1 (en) * | 2006-06-22 | 2007-09-11 | 세메스 주식회사 | Substrate treatment method |
-
2000
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- 2000-06-29 KR KR1020000036288A patent/KR20010039694A/en not_active Application Discontinuation
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8793898B2 (en) | 2007-05-23 | 2014-08-05 | Semes Co., Ltd. | Apparatus and method for drying substrates |
| TWI490930B (en) * | 2007-05-23 | 2015-07-01 | Semes Co Ltd | Apparatus and method for drying substrates |
| TWI491432B (en) * | 2012-02-27 | 2015-07-11 | Tokyo Electron Ltd | Liquid processing device and liquid processing method |
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| DE10031605A1 (en) | 2001-02-22 |
| KR20010039694A (en) | 2001-05-15 |
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