JP2002219424A - Substrate processing unit and substrate processing method - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing unit or a substrate processing method which can carry in and carry out the substrate smoothly, and can improve the cleaning efficiency. SOLUTION: A substrate processing unit 8 supplies the processing liquid and processes a substrate W. This has a supporting means 22 which supports the substrate W; a bottom moving member 42 which moves relatively between a processing position A which is adjacent to the bottom of the substrate W supported by the supporting member 22, and a retreat position B which is away from the bottom of the substrate W. Processing liquid is supplied in between the bottom moving member 42 which moves to the processing position A and the bottom of the substrate W supported by the supporting means 22, then the bottom of the substrate W is processed.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and method for cleaning a substrate such as a semiconductor wafer or glass for an LCD substrate.

[0002]

2. Description of the Related Art For example, in a semiconductor device manufacturing process, a semiconductor wafer (hereinafter, referred to as "wafer").
A cleaning system is used in which the wafer is cleaned with a cleaning solution such as a chemical solution or pure water to remove particles, organic contaminants, and contamination of metal impurities attached to the wafer.
Among them, a single-wafer cleaning system including a spin-type substrate cleaning apparatus for performing a cleaning process by rotating a wafer is known.

In general, a cleaning system is provided with a transfer device for transferring a wafer, and the transfer device transfers a wafer into and out of the substrate cleaning device. On the other hand, the substrate cleaning apparatus is provided with a spin chuck for rotatably holding the wafer, and when loading and unloading the wafer, the wafer is transferred between the arm of the transfer device that has entered the apparatus and the spin chuck. In a substrate cleaning apparatus, a wafer is generally supported by a spin chuck with a wafer surface (wafer surface) on which semiconductor devices are formed facing upward, and a cleaning liquid is supplied to the upper surface of the wafer rotated by the spin chuck to perform a cleaning process. Is applied.

In such a substrate cleaning apparatus, since the cleaning liquid is continuously supplied to the rotating wafer, the liquid consumption increases, and the lower surface of the wafer supported by the spin chuck (the surface of the wafer on which no semiconductor devices are formed). That is, since the cleaning liquid could not be supplied to the back surface of the wafer, only one side of the wafer could be cleaned. Therefore, according to a substrate cleaning apparatus disclosed in, for example, JP-A-8-78368, a wafer is supported by a plurality of support pins provided on a spin chuck, and a gap between the upper surface of the wafer and the lower surface of the wafer and the spin chuck is provided. By supplying and cleaning the cleaning liquid respectively, the consumption of the liquid is reduced and
Clean both sides of the wafer simultaneously.

[0005]

However, according to the substrate cleaning apparatus disclosed in Japanese Patent Laid-Open No. 8-78368,
This gap needs to be narrowed so that the cleaning liquid can be supplied to the entire gap between the lower surface of the wafer and the spin chuck. For this reason, the height of the support pins is kept low. For example, when the arms of the transfer device transfer wafers to and from the support pins, they may collide with the spin chuck, making it difficult to carry in and out the wafers. I have. In addition, substrate cleaning equipment includes
An upper surface moving member that moves with respect to the upper surface of the wafer is provided, and cleaning is performed by sandwiching the cleaning liquid on the upper surface of the wafer between the upper surface moving member and the upper surface of the wafer. However,
As described above, since the wafer is supported on the spin chuck with the wafer surface on which the semiconductor devices are formed facing upward, a relatively high cleaning ability is required on such a wafer upper surface, and the upper surface moving member is directly exposed to the cleaning liquid. If they are brought into contact, if particles and the like are attached to the upper surface moving member, the particles may contaminate the cleaning liquid.

SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of smoothly carrying in and out a substrate and further improving cleaning efficiency.

[0007]

According to the present invention, there is provided, in accordance with the present invention, an apparatus for processing a substrate by supplying a processing liquid, comprising: a support for supporting the substrate; A lower surface moving member that relatively moves between a processing position close to the lower surface of the supported substrate and a retracted position separated from the lower surface of the substrate supported by the support means; A substrate processing apparatus is provided, wherein a processing liquid is supplied between the substrate and the lower surface of the substrate supported by the supporting means to process the lower surface of the substrate.

In the present invention, the substrate is exemplified by a substrate such as a semiconductor wafer or glass for an LCD substrate, and may be a CD substrate, a printed substrate, a ceramic substrate, or the like. The surface of the substrate is a mirror surface so that a semiconductor device or the like can be formed, and the back surface of the substrate is a rough surface. Examples of the processing liquid include cleaning liquids such as various chemical liquids and pure water. The substrate processing apparatus of the present invention is embodied as a substrate cleaning apparatus for supplying a cleaning liquid to a wafer or the like to perform a cleaning process.

In the substrate processing apparatus of the present invention, for example, a transfer apparatus for transferring the substrate carries the substrate into the substrate processing apparatus, and transfers the substrate to the support means with the substrate surface facing up, for example, to support the substrate (substrate) The back surface is the lower surface). In this case, since the lower surface moving member has been relatively moved to the retracted position in advance, the carrying device does not come into contact with the lower surface moving member, and the carry-in operation is smoothly performed. Thereafter, the lower surface moving member relatively moves to the processing position, and a processing liquid is supplied between the lower surface moving member and the substrate lower surface (substrate back surface) to process the substrate lower surface.
On the other hand, when the substrate is unloaded from the substrate processing apparatus after the processing, the lower surface moving member relatively moves to the retreat position, and the transfer device causes the substrate to be unloaded from the support means without contacting the lower surface moving member. be able to. Thus, the carry-out is performed smoothly.

In this substrate processing apparatus, it is preferable that the supporting means is rotatable. For example, the support means rotates the supported substrate. Due to the rotation of the substrate, a flow occurs in the processing liquid supplied between the lower surface moving member and the lower surface of the substrate. This liquid flow prevents stagnation in the processing liquid and improves processing efficiency. For example, when the processing liquid is filled between the lower surface moving member and the lower surface of the substrate, the supporting means rotates the substrate at a relatively low rotation speed (for example, 30 to 50 rpm or less) at which the liquid pool does not collapse. In addition, the substrate is intermittently rotated, and the necessity of supplying a new processing liquid after uniformly supplying the processing liquid between the lower surface moving member and the lower surface of the substrate is eliminated. This is because the entire substrate lower surface can be treated with the processing liquid already supplied between the lower surface moving member and the substrate lower surface as long as the liquid level does not collapse. On the other hand, when the liquid level collapses, a new liquid is supplied and the liquid level is appropriately repaired. Thus, the consumption of the processing solution is saved. The rotation of the substrate causes the processing liquid to flow out from between the lower surface moving member and the lower surface of the substrate, while supplying a new processing liquid between the lower surface moving member and the lower surface of the substrate to allow the processing liquid to flow between the lower surface moving member and the lower surface of the substrate. A suitable treatment may be performed by always replacing the treatment liquid with a new treatment liquid. In this case, it is preferable to supply the new liquid gently to save the processing liquid. After supplying the processing liquid onto the lower surface moving member and filling the lower surface moving member, the lower surface moving member can be relatively moved to the processing position, and the processing can be performed by bringing the processing liquid into contact with the entire lower surface of the substrate.

In this substrate processing apparatus, it is preferable that the lower surface moving member is provided with a lower surface temperature adjusting mechanism for bringing the processing liquid to a predetermined temperature. In this case, the lower surface temperature adjusting mechanism adjusts the processing liquid to a predetermined temperature to promote, for example, a reaction.

In order that both surfaces of the substrate can be cleaned, the processing liquid may be supplied also to the upper surface of the substrate supported by the supporting means to process the upper surface of the substrate. Further, an upper surface moving member relatively freely approachable to the upper surface of the substrate supported by the supporting means may be provided. Further, a liquid temperature adjusting mechanism for adjusting the processing liquid supplied to the upper surface of the substrate to a predetermined temperature may be provided. Further, the upper surface moving member may be provided with an upper surface temperature adjusting mechanism for bringing the processing liquid supplied to the upper surface of the substrate to a predetermined temperature.

Further, according to the present invention, there is provided a method of processing a substrate by supplying a processing liquid to a substrate supported by a supporting means, wherein the processing liquid is supplied to a retracted position away from a lower surface of the substrate supported by the supporting means. A step of relatively moving the lower surface moving member, a step of passing the substrate to the supporting means and supporting the same, and a step of relatively moving the lower surface moving means to a processing position close to the lower surface of the substrate supported by the supporting means. A step of treating the lower surface of the substrate supported by the supporting means by contacting the lower surface with a processing liquid; and a step of rinsing the substrate.
A step of drying the substrate, a step of relatively moving the lower surface moving member to the retreat position, and a step of unloading the substrate from the support means.
A substrate processing method is provided.

In this substrate processing method, the lower surface moving member is relatively moved to the retracted position when the substrate is passed over the supporting means and supported, or when the substrate is received away from the supporting means. Transfer of the substrate to and from the supporting means is performed smoothly.

In this substrate processing method, when the processing liquid is brought into contact with the lower surface of the substrate, the processing liquid is filled between the lower surface moving member moved to the processing position and the lower surface of the substrate supported by the support means. It is good to process in the state where it was done. That is, the supply of the new liquid is stopped after the liquid is loaded, and the lower surface of the substrate is processed only with the existing processing liquid as much as possible, thereby saving the processing liquid. Further, when processing is performed by bringing a processing liquid into contact with the lower surface of the substrate, the substrate may be rotated relative to the lower surface moving member. A liquid flow is generated in the processing liquid by the rotation of the substrate, and the liquid flow prevents stagnation in the processing liquid and improves processing efficiency. Further, when processing is performed by bringing the processing liquid into contact with the lower surface of the substrate, the processing liquid may be heated to a predetermined temperature. For example, the treatment liquid is adjusted to a predetermined temperature to promote the reaction.

Further, the substrate processing method may include a step of supplying a processing liquid to the upper surface of the substrate for processing. Then, both sides of the substrate can be cleaned. In this case, it is preferable that the processing is performed in a state where the processing liquid is filled on the upper surface of the substrate. In other words, the supply of the new liquid is stopped after the filling, and the upper surface of the substrate is processed only with the existing processing liquid as much as possible, thereby saving the processing liquid. Further, the upper surface moving member may be moved relatively to the upper surface of the substrate supported by the supporting means. In this case, for example, the upper surface moving member does not contact the processing liquid supplied to the upper surface of the substrate.

[0017]

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a preferred embodiment of the present invention will be described based on a substrate cleaning apparatus as a substrate processing apparatus configured to clean both surfaces of a wafer as an example of a substrate. FIG. 1 is a perspective view of a cleaning system 1 incorporating the substrate cleaning apparatuses 8, 9, 10, and 11 according to the present embodiment. The cleaning system 1 is configured to carry in the wafers W on a carrier C basis, clean and dry the wafers W one by one, and carry out the wafers W on a carrier basis.

The cleaning system 1 is provided with a mounting portion 2 on which four carriers C containing wafers W can be mounted. At the center of the cleaning system 1, a take-out and storage arm 3 for taking out the wafers W before cleaning from the carrier C mounted on the mounting portion 2 one by one and storing the wafers W after cleaning in the carrier C is arranged. Have been. At the back of the unloading arm 3, a transfer arm 4 for exchanging wafers W with the unloading arm 3 is on standby. Transfer arm 4
Is provided movably along a transport path 6 provided at the center of the cleaning system 1. The transfer arm 4 includes three arms 4a, 4b, and 4c.
The wafer W is loaded and unloaded to and from various processing apparatuses disposed on both sides of the transfer path 6 using c. To give examples of various processing apparatuses, for example, substrate cleaning apparatuses 8 and 9 according to the present embodiment are vertically arranged in two stages on one side of a transport path 6.
Along with these substrate cleaning devices 8 and 9, substrate cleaning devices 10,
11 are arranged vertically in two stages. On the other side of the transfer path 6, four heating devices 12 for heating and drying the wafer W are provided in a stacked manner. A control area 1 adjacent to the heating device 12 and incorporating a printed circuit board or the like and controlling an electric control system of the cleaning system 1 is provided.
3 are arranged. In the wafer W, the front surface of the wafer W is a mirror surface so that, for example, a semiconductor device can be formed, and the back surface of the wafer W is a rough surface.

Each of the substrate cleaning apparatuses 8 to 11 is similarly configured to perform so-called paddle cleaning in which the front and back surfaces of the wafer W are filled with a cleaning liquid, that is, so-called paddle cleaning. To explain. FIG. 2 is a plan view of the substrate cleaning apparatus 8, and FIG. 3 is a longitudinal sectional view of the substrate cleaning apparatus 8. As shown in FIGS. 2 and 3, a cup 21 for accommodating a wafer W in a case 20 of the substrate cleaning apparatus 8.
And a spin chuck 22 as a supporting means for rotatably supporting the wafer W with the surface of the wafer W facing upward in the cup 21, for example. On one side of the case 20, an upper surface supply nozzle 23 as an upper surface supply means for supplying a cleaning liquid to the upper surface of the wafer W (the surface of the wafer W) supported by the spin chuck 22 is arranged.
An upper surface moving member 25 that moves relatively to the upper surface of the wafer W supported by the spin chuck 22 by a moving mechanism 24 such as a motor is disposed on the other side of the motor W.
The front side of the case 20 (the cleaning system 1 shown in FIG. 1)
, A shutter 26 that can be opened and closed is provided on the side surface facing the transfer path 6. When the transfer arm 4 carries the substrate into and out of the substrate cleaning device 8, the shutter 26 is opened. Has become.

A bracket 30 is fixed to a side surface of the cup 21, and the bracket 30 is connected to a nut 33 screwed to a ball screw shaft 32 rotated by a motor 31. Accordingly, the cup 21 is lowered to the position shown by the two-dot chain line 21 ′ in FIG. 3 by forward and reverse rotation of the motor 31, and the spin chuck 22 is projected above the cup 21 to transfer the wafer W. 3 to a position shown by the solid line 21 in FIG. 3 to move vertically so as to surround the spin chuck 22 and the wafer W and to prevent the cleaning liquid supplied to both sides of the wafer W from scattering around. It is.

A drain pipe 34 for draining liquid droplets in the cup 21 and an exhaust pipe 35 for exhausting the atmosphere in the cup 21 are connected to the bottom of the cup 21. A gas-liquid separation box 36 is provided in the drain pipe 34, and air bubbles and the like are removed from the liquid droplets discharged by the gas-liquid separation box 36. The removed air bubbles are exhausted to the outside by an exhaust pipe 37 connected to the gas-liquid separation box 36. An annular partition wall 38 is provided at the bottom of the cup 21.
A rectifying plate 39 is provided at the upper end of the partition wall 38 and is inclined downward toward the outside.

As shown in FIG.
Comprises a chuck body 40 for supporting a wafer W, and a rotating cylinder 41 connected to the bottom of the chuck body 40. A spin chuck 22 is provided in the chuck body 40.
A lower surface moving member 42 that moves relatively to the lower surface of the wafer W (the rear surface of the wafer W) supported by the above is disposed. A belt 43 is wound around the outer peripheral surface of the rotary cylinder 41, and the belt 43 is rotated by a motor 44 so that the entire spin chuck 22 rotates.

On the upper part of the chuck body 40, a holding member 45 for holding the peripheral portion of the wafer W at a plurality of positions.
Is installed. A lower surface of the holding member 45 is formed with an inclined surface 45a that becomes gradually lower from the periphery of the chuck body 40 toward the center, and the holding member 45 holds the wafer W by the inclined surface 45a. By providing, for example, a weight in each holding member 45, the upper side of each holding member 45 moves inward by centrifugal force when the spin chuck 22 rotates, and holds the peripheral edge of the wafer W from outside. May be configured. A discharge port 46 is provided at an appropriate position in the circumferential direction at the bottom of the chuck body 40, and the discharge port 46 allows the chuck body 4 to be moved.
Draining of the liquid droplets within 0 and exhaustion of the atmosphere are performed.

The lower surface moving member 42 is connected to a shaft 47 that penetrates through the chuck body 40 and the rotary cylinder 41. The shaft 47 is fixed to the upper surface of a horizontal plate 48, and the horizontal plate 48 is vertically moved up and down by a lifting mechanism 49 such as a cylinder. Accordingly, the lower surface moving member 42 rises upward in the chuck main body 40 as shown by a two-dot chain line 42 ′ in FIG. 4, and performs a cleaning process on the lower surface of the wafer W supported by the spin chuck 22. 4 (processing position A), and the wafer W supported by the spin chuck 22 is lowered downward in the chuck body 40 as shown by a solid line 42 in FIG.
It can be moved up and down freely in a state of being separated from the lower surface and waiting (retreat position B). As described above, the cup 21 is lowered to the position indicated by the two-dot chain line 21 ', and the spin chuck 2 is rotated.
When the wafer W is transferred to and from the lower surface moving member 4,
2 is located at the evacuation position B. Then, a sufficient gap is formed between the lower surface moving member 42 and the position (height) of the wafer W supported by the spin chuck 22, and the transfer of the wafer W to and from the spin chuck 22 is performed. This has been done smoothly. While the lower surface moving member 42 is fixed at a predetermined height, the lower surface moving member 42 is moved to the processing position by vertically moving the entire spin chuck 22 by connecting an elevating mechanism (not shown) to the rotary cylinder 41. A and the retreat position B may be movable up and down.

A lower surface supply path 50 for supplying a cleaning liquid such as a chemical solution or pure water or a drying gas to the lower surface moving member 42 is provided through the inside of the shaft 47. This lower surface supply path 5
0, a chemical solution supply path 52, a pure water supply path 53, and a gas supply path 54 are connected via a three-way valve 51, respectively.
The fluid supplied to the lower surface moving member 42 is switched by the switching operation of 1. The chemical supply path 52 is provided with a temperature controller 55 that adjusts the temperature of the chemical supplied to the upper surface of the wafer W, for example, a heater. Bottom supply path 50
Functions as a lower surface supply means. For example, when the three-way valve 51 is switched to the chemical liquid supply path 52 side, the chemical liquid adjusted to a predetermined temperature is supplied from the chemical liquid supply path 52. For example, the lower surface moving member 42 rises to the processing position A, and moves to the processing position A and the lower surface moving member 42 and the spin chuck 22.
Between 0.5 and 3 between the lower surfaces of the wafers W supported by
A gap L1 of about mm is formed. And the lower surface supply path 50
Supplies the chemical between the lower surface moving member 42 and the lower surface of the wafer W through the chemical supply path 52. Such a narrow gap L1
When the chemical solution is supplied to the wafer W, the chemical solution spreads over the entire gap L1 and is filled, forming a liquid film of the chemical solution that can uniformly contact the entire lower surface of the wafer W to perform a suitable cleaning process. Moreover, even after the formation of the liquid film, the liquid film of the chemical solution is sandwiched between the gaps L1, so that the shape of the liquid film of the chemical solution can be prevented from being deformed by the surface tension, and a suitable cleaning process can be continuously performed. Similarly, pure water is supplied through the pure water supply path 53, and pure water is supplied onto the lower surface moving member 42. For example, a normal temperature N ₂ gas (a heated hot N ₂ gas may be supplied) is supplied from the gas supply path 54, and the lower surface of the wafer W is dried after cleaning.

On the other hand, the lower surface discharge path 56 for discharging the cleaning liquid and the drying gas supplied to the lower surface moving member 42 is connected to the shaft 4.
7 is provided. The lower-side discharge path 56 is provided with a chemical liquid discharge path 58 and a pure water discharge path 5 through a three-way valve 57.
9. Gas exhaust paths 60 are connected to each other. The liquid film of the chemical liquid and the liquid film of the pure water formed on the lower surface moving member 42 are drained to the outside through the liquid drain path 58 and the pure water drain path 59, respectively. The N ₂ gas filled in the chuck body 40 is
The gas is exhausted to the outside by the gas exhaust path 60. The chemical solution includes, for example, APM (NH ₄
OH / H ₂ O ₂ / H ₂ O), HPM mainly composed of hydrochloric acid (mixture of HCl / H ₂ O ₂ / H ₂ O), DHF mainly composed of hydrofluoric acid (HF / H ₂ O mixture)
Etc.

Inside the lower surface moving member 42, a heater 61 that generates heat by power supply is embedded. This heater 61
Functions as a lower surface temperature adjusting mechanism, and adjusts the chemical supplied between the lower surface moving member 42 and the lower surface of the wafer W to a predetermined temperature, for example, as described above.

As shown in FIGS.
Has an elongated shape, and its length is larger than the diameter of the wafer W, for example. Top supply nozzle 2
A plurality of supply ports 65 are provided in a row in the longitudinal direction below 3, and an upper supply path 66 for supplying, for example, a chemical solution, pure water, or N ₂ gas is connected to an upper part of the upper supply nozzle 23. . A chemical solution supply path 68, a pure water supply path 69, and a gas supply path 70 are respectively connected to the upper surface supply path 66 via a three-way valve 67, and are supplied into the upper surface supply nozzle 23 by a switching operation of the three-way valve 67. The fluid is switched. The chemical and pure water supplied from the chemical supply passage 68 and the pure water supply passage 69 are temporarily stored in a liquid reservoir 71 provided in the upper surface supply nozzle 23. The liquid reservoir 71 forms a long space in the longitudinal direction, and communicates with all the supply ports 65. The cleaning liquid stored in the liquid reservoir 71 is supplied to the upper surface of the wafer W through each supply port 65. Therefore, by discharging a predetermined amount of cleaning liquid at a time from the plurality of supply ports 65, the cleaning liquid is discharged linearly longer than the diameter of the wafer W.

As shown in FIG. 6, a temperature adjusting path S as a liquid temperature adjusting mechanism for adjusting the temperature of the cleaning liquid in the liquid reservoir 71 is provided in the liquid reservoir 71 along the longitudinal direction. ing. The temperature adjustment path S is formed of a tube or the like so that a fluid adjusted to a predetermined temperature, for example, water or the like flows therein. The temperature adjustment path S is capable of exchanging heat between the inside and the outside of the temperature adjustment path S. The temperature adjusting path S is provided from above the liquid supply part 7 near one end of the upper surface supply nozzle 23.
1, passes through the inside of the liquid reservoir 71 formed in the longitudinal direction, and exits from above the vicinity of the other end of the upper surface supply nozzle 23 and out of the upper surface supply nozzle 23. Therefore, when the temperature-controlled water passes through the temperature control path S,
The temperature of the cleaning liquid in the liquid reservoir 71 is adjusted. In particular, when the temperature of the chemical solution is adjusted to a predetermined temperature and supplied to the upper surface of the wafer W, a high cleaning ability can be obtained, and thus providing the temperature adjustment path S is effective.

As shown in FIG. 2, the upper surface supply nozzle 23 is supported by a support arm 72. The support arm 72 is driven by a drive mechanism (not shown) such as a motor, for example, in the longitudinal direction of the substrate cleaning apparatus 8. It is configured to be movable along a rail 73 extending horizontally in the direction (X direction in FIG. 2). Further, the support arm 72 is configured to be movable in the vertical direction in order to adjust the distance between the upper surface supply nozzle 23 and the wafer W. Therefore, for example, as shown in FIG.
Is translated. Then, a chemical solution is supplied linearly to the wafer W that has been rotated at least slowly and half-turned by the spin chuck 22 in a linear manner, and the liquid is filled, so that a liquid film of the chemical solution is uniformly formed on the upper surface of the wafer W. ing.

The upper surface moving member 25 is provided with the moving mechanism 2.
4 allows it to move horizontally and vertically. As described above, when the liquid film of the chemical solution is formed on the upper surface of the wafer W by the upper surface supply nozzle 23, as shown in FIG.
5 moves vertically above the spin chuck 22 while moving horizontally, and descends vertically while increasing the distance of the wafer W as shown by a two-dot chain line 25 'in FIG. The wafer W is moved to a position that does not come into contact with the liquid film of the chemical solution and is close to the upper surface of the wafer W. In addition, as described above, it rises vertically above the spin chuck 22 from a state close to the upper surface of the wafer W, moves horizontally to a position distant from the cup 21, and stands by. Thus, the upper surface moving member 25
Can move forward and backward with respect to the upper surface of the wafer W supported by the spin chuck 22.

A chemical supply path 75 is connected to the upper part of the upper surface moving member 25. Therefore, the upper surface moving member 25
It is configured to supply a chemical solution to the upper surface of the wafer W.

Inside the upper surface moving member 25, a heater 76 that generates heat by power supply is buried similarly to the lower surface moving member 42. The heater 76 functions as an upper surface temperature adjusting mechanism. When the upper surface moving member 25 moves to a position close to the upper surface of the wafer W as shown by a two-dot chain line 25 ′ in FIG. Generates heat and adjusts the liquid film of the chemical formed on the upper surface of the wafer W to a predetermined temperature. Further, as described above, the upper surface moving member 25 covers the upper part of the wafer W, thereby preventing the chemical solution from evaporating from the liquid film of the chemical solution. In this case, a gap L2 is formed between the upper surface moving member 25 that has moved to a position close to the upper surface of the wafer W and the liquid film of the chemical formed on the upper surface of the wafer W supported by the spin chuck 22. The moving member 25 does not come into direct contact with the liquid film of the chemical solution. By doing so, for example, it is possible to prevent a situation in which particles or the like adhering to the upper surface moving member 25 are transferred to the liquid film of the chemical solution, and the cleaning ability of the chemical solution is reduced.

The other substrate cleaning devices 9, 10, and 11 provided in the cleaning system 1 also have the same configuration as the substrate cleaning device 8, and perform paddle cleaning of both surfaces of the wafer W simultaneously with a liquid film of the cleaning liquid. Can be.

In the cleaning system 1, first, a carrier C containing, for example, 25 wafers W that have not been cleaned yet by a transfer robot (not shown) is placed on the placing section 2. Then, the wafers W are taken out one by one from the carrier C placed on the placing section 2 by the take-out and storage arm 3, and the wafers W are transferred from the take-out and storage arm 3 to the transfer arm 4. Then, the wafer W is appropriately carried into each of the substrate cleaning devices 8 to 11 by the transfer arm 4,
Contaminants such as particles attached to the wafer W are washed and removed. The wafer W having been subjected to the predetermined cleaning process is appropriately unloaded from the substrate cleaning devices 8 to 11 again by the transfer arm 4, delivered to the unloading storage arm 3, and stored again in the carrier C.

Here, the cleaning by the substrate cleaning apparatus 8 will be described as a representative with reference to FIGS. First, the shutter 26 of the substrate cleaning device 8 is opened, and the transfer arm 4 causes, for example, the arm 4c holding the wafer W to enter the device. The cup 21 descends to relatively protrude the chuck body 40 upward. As shown in FIG.
2 is previously lowered and located at a retracted position B in the chuck body 40.

As shown in FIG. 9, the transfer arm 4 lowers the arm 4c to transfer the wafer W to the holding member 45, and the spin chuck 22 supports the wafer W with the surface of the wafer W on which the semiconductor device is formed facing upward. I do. In this case, since the lower surface moving member 42 is located at the retreat position B and is sufficiently separated from the position (height) of the wafer W supported by the spin chuck 22, the transfer arm 4 allows the wafer W
To the spin chuck 22.

Next, as shown in FIG. 10, the lower surface moving member 42 moves up to the processing position A in the chuck body 40.
Lower surface moving member 42 moved to processing position A and lower surface of wafer W supported by spin chuck 22 (wafer W rear surface)
Between them, for example, a gap L1 of about 0.5 to 3 mm is formed. On the other hand, the chemical liquid is supplied between the lower surface moving member 42 and the lower surface of the wafer W through the lower surface supply path 50. That is, the three-way valve 5
1 is switched to the side of the chemical supply path 52 to flow the chemical whose temperature has been adjusted to a predetermined temperature by the temperature controller 55. Lower surface moving member 42
On the upper side, for example, the chemical liquid is gently exuded from the lower surface supply path 50 and supplied to the gap L1. In the narrow gap L1,
The chemical solution is spread and spread over the entire surface to form a liquid film of the chemical solution that uniformly contacts the entire lower surface of the wafer W. When a liquid film of the chemical is formed in the entire gap L1, the supply of the chemical is stopped and the wafer W is stopped.
The lower surface is cleaned. When a liquid film is formed by pouring a liquid chemical in the gap L1, it is possible to prevent the liquid film of the liquid chemical from being deformed due to surface tension. For example, if the shape of the liquid film of the chemical liquid is broken, a portion of the lower surface of the wafer W that is not in contact with the liquid film of the chemical liquid is generated, or bubbles are mixed in the liquid film, resulting in poor cleaning. Thus, the lower surface moving member 42
By pouring the chemical between the wafer and the lower surface of the wafer W, it is possible to maintain the shape of the liquid film of the chemical and prevent poor cleaning.

In this case, the spin chuck 22 rotates the wafer W at a relatively low rotation speed (for example, 30 to 50 rpm or less) that does not disturb the shape of the liquid film of the chemical solution.
Due to the rotation of the wafer W, a liquid flow is generated in the liquid film of the chemical solution, and this liquid flow prevents stagnation in the liquid film of the chemical solution and improves the cleaning efficiency. Further, the rotation of the wafer W may be performed intermittently. For example, after rotating the wafer W for a predetermined time or a predetermined number of rotations, the rotation operation of the spin chuck 22 is stopped for a predetermined time, the wafer W is stopped, and then the wafer W is rotated again. When the rotation and the stop of the rotation of the wafer W are repeated in this manner, the chemical liquid can be easily diffused to the entire lower surface of the wafer W. Of course, the cleaning process can be performed while the wafer W is kept stationary without rotating at all. Further, after the liquid film is formed, there is no need to supply a new chemical solution. This is because the entire lower surface of the wafer W can be cleaned with the chemical already supplied between the lower surface moving member 42 and the lower surface of the wafer W as long as the shape of the liquid film of the chemical does not collapse. On the other hand, when the shape of the liquid film of the chemical liquid is about to collapse, a new liquid is supplied and the shape of the liquid film of the chemical liquid is appropriately restored. Thus, the consumption of the chemical solution is saved. The rotation of the wafer W causes the droplets of the liquid film of the chemical solution to be transferred to the lower surface moving member 42.
By continuously supplying the chemical solution through the lower surface supply path 50 while dripping from the periphery of the liquid crystal, it is also possible to always replace the inside of the liquid film of the chemical solution with a brand-new chemical solution and perform a suitable chemical treatment. Also in this case, it is preferable to supply the new solution as quietly as possible to save the chemical solution.

The heater 61 in the lower surface moving member 42 generates heat, and the temperature of the chemical film on the lower surface moving member 42 is adjusted to a predetermined temperature. As described above, since the temperature of the chemical solution is continuously adjusted from the supply of the chemical solution to the formation of the liquid film, the chemical solution reaction is promoted in the liquid film, and the cleaning efficiency can be improved. For example, particles, organic contaminants, and metal impurities attached to the lower surface of the wafer W can be removed in a short time, and the removal rate thereof can be improved.

On the other hand, the upper surface supply nozzle 23 moves in parallel to a predetermined position above the wafer W. The upper surface supply nozzle 23 supplies the chemical solution linearly. That is, the three-way valve 67 is switched to the side of the chemical liquid supply path 68 to flow the chemical liquid to the upper surface supply path 66, and the temperature of the chemical liquid is adjusted to a predetermined temperature by the temperature adjusting path S in the liquid reservoir 71 and is discharged from the discharge port 65. Further, the wafer W is rotated at least half a turn by the spin chuck 22 so that the wafer W
A liquid solution is formed on the upper surface to form a liquid film of the liquid solution uniformly.

When the liquid film of the chemical solution is also formed on the upper surface of the wafer W, the upper surface moving member 25 is located at a position where it does not contact the liquid film of the chemical solution formed on the upper surface of the wafer W, as shown in FIG. The wafer W moves to a position close to the upper surface of the wafer W. For example, between the upper surface moving member 25 moved to a position close to the upper surface of the wafer W and the liquid film of the chemical formed on the upper surface of the wafer W supported by the spin chuck 22,
A gap L2 is formed. The upper surface moving member 25
Only when the shape of the liquid film of the chemical solution on the upper surface is likely to collapse, a new liquid is supplied to appropriately repair the shape of the liquid film of the chemical solution. After the liquid film is formed, supply of the new liquid is refrained to save the consumption of the chemical liquid. While rotating the wafer W to drop liquid film droplets of the chemical solution from the periphery of the upper surface of the wafer W, while continuously supplying the chemical solution from the upper surface moving member 25, the liquid film of the chemical solution is formed on the upper surface of the wafer W. The inside may always be replaced with a brand new chemical solution, and a suitable chemical treatment may be performed.

The heater 76 in the upper surface moving member 25 generates heat, and the liquid film of the chemical formed on the upper surface of the wafer W is adjusted to a predetermined temperature. Since the upper surface moving member 25 covers the upper side of the liquid film of the chemical solution in this manner, it is possible to prevent the chemical solution from evaporating from the liquid film and to reduce the amount of the liquid film, and to maintain the predetermined temperature by controlling the temperature of the chemical solution. As a result, it is possible to prevent a decrease in the cleaning ability. Further, since the temperature of the chemical solution is continuously adjusted from the supply of the chemical solution to the formation of the liquid film, the chemical reaction can be promoted in the liquid film even on the upper surface of the wafer W, and the cleaning efficiency can be improved.
Further, since the upper surface moving member 25 does not contact the liquid film of the chemical formed on the upper surface of the wafer W with the gap L2 therebetween,
Even if particles or the like are attached to the upper surface moving member 25, it is possible to prevent the liquid film of the chemical solution from being contaminated by the particles or the like. In particular, the wafer W is supported by the spin chuck 22 with the surface of the wafer W on which semiconductor devices and the like are formed facing upward, for example.
Thus, it is important to maintain the cleanliness of the liquid film of the chemical solution.

When the chemical treatment on both sides of the wafer W is completed, as shown in FIG. 12, the three-way valve 51 is switched to the pure water supply path 53 side to flow pure water to the lower surface supply path 50, and the pure water is supplied to the wafer W.
Supply to the lower surface. In addition, the wafer W is rotated at a higher speed (for example, about 500 to 1000 rpm) than when the chemical liquid processing is performed, and the lower surface moving member 42 is maintained at the processing position A. The wafer W rotating at such a high speed
By supplying pure water through the gap L1, the supplied pure water can be uniformly diffused over the entire lower surface of the wafer W. Further, the lower surface moving member 42 itself can be cleaned. On the other hand, the upper surface moving member 25 retreats from the upper surface of the wafer W and waits outside the cup 21. Further, the upper surface supply nozzle 23 moves again to a predetermined position above the wafer W in parallel. The upper surface supply nozzle 23 supplies pure water linearly to the upper surface of the wafer W. That is, the three-way valve 67 is switched to the pure water supply path 69 side to flow pure water to the upper surface supply path 66. By supplying pure water to the wafer W rotating at a high speed, the supplied pure water can be uniformly diffused over the entire upper surface of the wafer W. Thus, both sides of the wafer W are rinsed, and the wafer W
Rinse the chemicals from.

After the rinsing process, the wafer W is rotated at a higher speed (for example, about 2000 to 3000 rpm) than when the rinsing process is performed on the wafer W, and the wafer W is spin-dried. Also,
The N ₂ gas (or heated hot N ₂ gas) may be supplied to the lower surface supply channel 50 by switching the three-way valve 51 to the gas supply channel 54 side to supply the N ₂ gas to the lower surface of the wafer W. At this time, drying of the lower surface moving member 42 is also performed at the same time. As shown in FIG. 13, the lower surface moving member 42 is lowered to the retreat position B during the spin drying, and the N ₂ gas is supplied to the lower surface of the wafer W from the retreat position B. For example, in the first 10 seconds, the N ₂ gas is supplied from the position of the processing position A, and then the lower surface moving member 42 descends and supplies the N ₂ gas from the position of the retreat position B in the second 10 seconds. Of course, the lower surface moving member 42 may continue to supply the N ₂ gas at the processing position A until the spin drying is completed. On the other hand, the upper surface supply nozzle 23 supplies N ₂ gas to the upper surface of the wafer W. That is, the three-way valve 67 is switched to the gas supply path 70 side to flow the N ₂ gas into the upper supply path 66. In this way, both surfaces of the wafer W are rinsed, and the pure water droplets are removed from the wafer W.

After the drying process, the wafer W is carried out from the substrate processing apparatus 8. That is, as shown in FIG. 14, the transfer arm 4 moves the wafer W
Support the lower surface. Then, as shown in FIG. 15, the arm 4b is raised to receive the wafer W apart from the spin chuck 22 and to withdraw the wafer W from the inside of the apparatus. In this case, since the lower surface moving member 42 is located at the retreat position B, the lower surface moving member 42 and the spin chuck 22
Between the position (height) of the wafer W supported by the
A sufficient gap is formed, and the transfer arm 4
The wafer W can be received from the spin chuck 22 with a margin.

According to the substrate processing apparatus 8, the wafer W
When loading and unloading the wafers, since the lower surface moving member 42 has been previously lowered to the retreat position B, the transfer device 4 does not come into contact with the lower surface moving member 42, so that the wafer W can be smoothly loaded and unloaded. Can be. In addition, since the upper surface moving member 25 does not come into contact with the chemical solution that is liquid on the upper surface of the wafer W,
It is possible to prevent contamination of the chemical solution and maintain a high cleaning ability. Further, since the temperature of the chemical liquid on both sides of the wafer W is controlled to a predetermined temperature by the heaters 61 and 76, the cleaning efficiency can be improved.

In the substrate processing apparatus 8, since both surfaces of the wafer W can be cleaned at the same time, for example, a substrate cleaning device configured to clean only one surface of the wafer W is replaced by a device dedicated to the front surface of the wafer W and a back surface of the wafer W. The cleaning system 1 can be reduced in size and the throughput can be improved as compared with a case where the cleaning system 1 is separately provided and the front and back surfaces of the wafer W are sequentially cleaned.

Although an example of the preferred embodiment of the present invention has been described above, the present invention is not limited to the embodiment described here. For example, in the previous embodiment, the lower surface moving member 42 processes the lower surface of the wafer W by supplying a chemical solution to the gap L1 after ascending to the processing position A. However, as shown in FIG. Before ascending (at the time of being located at the evacuation position B), a liquid film is formed by pouring a chemical solution on the lower surface moving member 42, and after the liquid film is formed, the lower surface moving member 42 rises to the processing position A. Alternatively, the processing may be performed by bringing the chemical solution into contact with the lower surface of the wafer W as shown in FIG. Also in this case, by sandwiching the chemical solution in the narrow gap L1, the chemical solution can be uniformly brought into contact with the entire lower surface of the wafer W while preventing the collapse of the liquid level, and a suitable cleaning process can be performed.

For example, FIGS. 17 and 18 show modifications of the upper surface supply nozzle. Upper surface supply nozzle 8 shown in FIGS.
A chemical liquid supply path 81 for supplying a chemical liquid and a pure water / gas supply path 82 for supplying pure water and N ₂ gas are connected to the upper part of the zero. Further, inside the upper surface supply nozzle 80, a chemical solution reservoir 83 for temporarily storing a chemical solution, and a pure water reservoir 84 for temporarily storing pure water are provided. The chemical solution supplied from the chemical solution supply path 81 is stored in the chemical solution storage section 83, and then supplied to the upper surface of the wafer W through a plurality of chemical solution supply ports 85 communicating with the chemical solution storage section 83, and from the pure water / gas supply path 82. The supplied pure water is stored in the pure water reservoir 84 and then supplied to the upper surface of the wafer W through a plurality of pure water supply ports 86 communicating with the pure water reservoir 84. Further, temperature adjustment paths S are provided in the chemical solution reservoir 83 and the pure water reservoir 84, respectively, so that the temperature of the chemical solution and pure water can be controlled individually.

Further, a pure water nozzle for supplying only the chemical solution from the upper surface supply nozzle and supplying pure water to the upper surface of the wafer W and a drying nozzle for supplying dry gas to the upper surface of the wafer W are separately provided. The corresponding nozzles may be used. Further, the nozzle for supplying the chemical liquid may be a general supply nozzle having only one supply port, instead of the upper surface supply nozzle 23 in which a plurality of supply ports are provided in a line in the longitudinal direction.

Further, the chemical liquid treatment to the drying treatment may be continuously performed by the upper surface moving member. That is, as shown in FIG. 19, a chemical supply path 88, a pure water supply path 89, and a gas supply path 90 are supplied to a supply path 86 of the upper surface moving member 85 via a three-way valve 87.
Are connected, and a temperature controller 91 is provided in the chemical solution supply path 88. By sequentially switching the three-way valve 87 in this manner, a chemical solution, pure water, and N ₂ gas are supplied to the upper surface of the wafer W to perform various processes by the upper surface moving member 85. After spin drying, the wafer 76 is heated by the heat of the heater 76. The droplets remaining on W may be dried.

FIG. 20 shows a substrate cleaning apparatus 95 according to another embodiment of the present invention. This substrate cleaning device 95 includes:
A circular cylindrical upper surface moving member 96 (cover) that can surround the wafer W supported by the spin chuck 22 is provided. The heater 76 is embedded in the upper surface moving member 96, and the chemical solution supply path 75 is connected to the upper surface of the upper surface moving member 96. Except for the point that the upper surface moving member 96 is provided, the substrate cleaning device 95 has substantially the same configuration as the substrate cleaning device 8 described above, and therefore, in FIG. 20, the substrate cleaning device 95 has the same configuration as that of FIG. The same components are denoted by the same reference numerals, and the description thereof will not be repeated.

In the substrate cleaning apparatus 95, the upper surface moving member 96 is located at a position where the upper surface moving member 96 does not come into contact with the liquid film of the chemical solution formed on the upper surface of the wafer W during cleaning. Then, it moves to the position, and covers the periphery of the wafer W and thus the periphery of the chuck body 40. Upper surface moving member 9
In the state covered by 6, the evaporation of the chemical solution can be further prevented. If the heater 76 generates heat, the heater 76
Does not escape to the surroundings, the temperature of the liquid film of the chemical formed on the upper surface of the wafer W can be adjusted to a predetermined temperature in a short time. Further, since the atmosphere in the chuck body 40 cannot escape to the surroundings, the displacement of the cup 21 can be reduced, and for example, the running cost can be suppressed.

Further, the present invention is not limited to the substrate cleaning apparatus to which the cleaning liquid is supplied, and may perform other processing on the substrate except for cleaning using other various processing liquids. . The substrate is not limited to a semiconductor wafer, but may be another glass for an LCD substrate, a CD substrate, a printed substrate, a ceramic substrate, or the like.

[0056]

EXAMPLE Next, an example of the present invention was performed. The removal amount (etching amount) of the paddle cleaning in which the cleaning liquid is applied to the wafer W for cleaning is evaluated.

First, as shown in FIG. 21, a thermal oxide film (Th-Ox) having a thickness of about 10 nm ± 0.3 nm is formed on the wafer W.
ide), and such a wafer W is supplied to the heater 10.
0 is mounted on the mounting table 101 embedded therein. Then, a cleaning solution heated to a predetermined temperature (for example, 60 ° C.), for example, APM (a mixed solution of NH ₄ OH / H ₂ O ₂ / H ₂ O) is applied to the thermal oxide film, and the temperature is kept at room temperature. S for wafer W
Perform C1 paddle cleaning. APM component mixing volume ratio,
That is, an aqueous ammonia solution (NH ₄ OH): aqueous hydrogen peroxide (H ₂ O ₂ ): pure water (H ₂ O) is, for example, 1: 1: 5.
1: 1: 10, 1: 2: 5, 1: 2: 10, 1: 5:
5, 1: 5: 10, 1: 5: 20, and 1: 5: 50 are sequentially changed to examine how the removal amount of the thermal oxide film changes. For measuring the film thickness, an optical film thickness measuring device such as an ellipsometer is used. Processing time is 5 minutes (mi
n), and a measurement result obtained by averaging the measurement values at nine measurement points in the wafer W surface is adopted. FIG. 22 shows a table summarizing the measurement results, and FIG. 23 shows a graph created based on this table.

Next, as shown in FIG.
1. A lid 102 is disposed above the wafer W placed on the wafer 1 and a gap L3 formed between the lid 102 and the wafer W is
The thickness is sequentially reduced to 0 mm, 30 mm, and 15 mm, and how the removal amount of the thermal oxide film changes is examined. When the gap L3 is 60 mm, the mounting table 101 is rotated to such an extent that the shape of the APM liquid film does not collapse, and the inside of the APM liquid film is agitated, and the removal amount of the thermal oxide film in that case is also examined. APM
The mixing volume ratio of the components is 1: 1: 5 (aqueous ammonia solution:
(Hydrogen peroxide solution: pure water). The conditions such as the predetermined temperature of the APM, the film thickness measuring device, the processing time, and the measurement points are the same as those of the evaluation method described above. FIG. 25 shows a table summarizing the measurement results, and FIG. 26 shows a graph created based on this table.

Next, a lid is placed above the wafer W, and the heater 100 is heated to adjust the temperature of the wafer W to a predetermined temperature (for example, 60 ° C.). Check if it changes. In this case, the AP
The mixing volume ratio of the M component is 1: 1: 5, 1: 2: 10,
It is sequentially changed to 1: 5: 10 and 1: 5: 50. Also,
The distance L3 between the wafer W and the lid is fixed at 5 mm, and the processing time is 5 minutes (min). The conditions such as the predetermined temperature of the APM, the film thickness measuring device, and the measuring points are the same as in the evaluation method described above. FIG. 27 shows a table summarizing the measurement results, and FIG. 28 shows a graph created based on FIG.

As can be understood from these tables and graphs, when the wafer W is simply placed on the mounting table, the removal amount of the thermal oxide film is the smallest, and when the lid and the temperature control are combined, the thermal oxide film is removed. Most amount. Further, as shown in FIGS. 25 and 26, when the lid is arranged above the wafer W, the smaller the gap L3 formed between the lid and the wafer W, the higher the removal amount. Further, it is considered that, when the wafer W is rotated and the liquid film of the chemical liquid is stirred, a liquid flow is generated in the liquid film and the removal amount is improved.

[0061]

According to the present invention, when loading and unloading a substrate, the lower surface moving member is previously lowered to the retracted position, so that, for example, the transfer device for loading and unloading the substrate comes into contact with the lower surface moving member. Therefore, the substrate can be smoothly loaded and unloaded. In addition, since the upper surface moving member does not come into contact with the cleaning liquid laid on the upper surface of the substrate, the cleaning liquid can be prevented from being contaminated, and high cleaning performance can be maintained.
Further, the temperature of the chemical liquid on both sides of the substrate is adjusted to a predetermined temperature by the upper surface temperature adjusting mechanism and the lower surface temperature adjusting mechanism, thereby preventing the cleaning liquid from evaporating and improving the cleaning efficiency.

[Brief description of the drawings]

FIG. 1 is a perspective view of a cleaning system including a substrate cleaning apparatus according to an embodiment.

FIG. 2 is a plan view of the substrate cleaning apparatus according to the embodiment.

FIG. 3 is a longitudinal sectional view of the substrate cleaning apparatus according to the present embodiment.

FIG. 4 is an enlarged longitudinal sectional view showing a spin chuck.

FIG. 5 is a perspective view of an upper surface supply nozzle.

FIG. 6 is a vertical sectional view of an upper surface supply nozzle.

FIG. 7 is a perspective view illustrating a state in which a cleaning liquid is supplied to a wafer from an upper surface supply nozzle.

FIG. 8 is an explanatory diagram of a step of carrying a wafer into a substrate cleaning apparatus.

FIG. 9 is an explanatory diagram of a process of transferring a wafer to a spin chuck.

FIG. 10 is an explanatory view of a step of filling a chemical solution between the lower surface moving member and the lower surface of the wafer and filling a chemical solution on the upper surface of the wafer.

FIG. 11 is an explanatory diagram of a step of paddle cleaning both surfaces of the wafer.

FIG. 12 is an explanatory diagram of a step of performing a rinsing process on both surfaces of the wafer.

FIG. 13 is an explanatory diagram of a process of drying both surfaces of the wafer.

FIG. 14 is an explanatory diagram of a step of receiving a wafer from a spin chuck.

FIG. 15 is an explanatory diagram of a step of carrying out the wafer from the substrate cleaning apparatus.

FIG. 16 is an explanatory diagram of a step of filling a chemical solution on a lower surface moving member before ascending to a processing position.

FIG. 17 is a perspective view showing a modification of the upper surface supply nozzle.

18 is a vertical sectional view of the upper surface supply nozzle of FIG.

FIG. 19 is a longitudinal sectional view showing a modification of the upper surface moving member.

FIG. 20 is a longitudinal sectional view of a substrate cleaning apparatus according to another embodiment.

FIG. 21 is an explanatory diagram showing a configuration of the present example.

FIG. 22 is a table showing the relationship between the mixed volume ratio of APM components and the removal amount of the thermal oxide film when the thermal oxide film is subjected to SC1 paddle cleaning in this example.

FIG. 23 is a graph created based on FIG. 22;

FIG. 24 is an explanatory diagram in the case of disposing a lid above a wafer in the configuration of the present embodiment.

FIG. 25 is a table showing the relationship between the gap formed between the lid and the wafer and the removal amount of the thermal oxide film when the lid is disposed above the wafer and SC1 paddle cleaning is performed in the present embodiment.

FIG. 26 is a graph created based on FIG. 25.

FIG. 27 is a diagram showing an example of an AP in a case where a lid is arranged above a wafer while performing temperature control and SC1 paddle cleaning is performed in the present embodiment.
4 is a table showing the relationship between the mixing capacity ratio of the M component and the removal amount of the thermal oxide film.

FIG. 28 is a graph created based on FIG. 27;

[Explanation of symbols]

 A Processing position B Evacuation position C Carrier W Wafer 1 Cleaning system 8, 9, 10, 11 Substrate cleaning device 22 Spin chuck 23 Upper surface supply nozzle 25 Upper surface moving member 42 Lower surface moving member 50 Lower surface supply path 61, 72 Heater

──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. ⁷ Identification code FI Theme coat ゛ (Reference) H01L 21/304 651 H01L 21/304 651L F term (Reference) 2H088 FA21 FA30 HA01 2H090 JB02 JC19 3B201 AA03 AB03 BA12 BB21 BB43 BB82 BB93 BB94 BB98 CB15 CC01 CD11

Claims (15)

[Claims] 1. An apparatus for processing a substrate by supplying a processing liquid, comprising: a support means for supporting the substrate; a processing position close to a lower surface of the substrate supported by the support means; and an apparatus supported by the support means. A lower surface moving member that relatively moves between a retreat position separated from the substrate lower surface, and a processing liquid is supplied between the lower surface moving member that has moved to the processing position and the substrate lower surface supported by the support means. A substrate processing apparatus characterized in that a lower surface of a substrate is processed by a process. 2. The substrate processing apparatus according to claim 1, wherein said support means is rotatable. 3. The substrate processing apparatus according to claim 1, wherein the lower surface moving member is provided with a lower surface temperature adjusting mechanism for bringing the processing liquid to a predetermined temperature. 4. The substrate processing apparatus according to claim 1, wherein the processing liquid is supplied also to the upper surface of the substrate supported by the support means, and the upper surface of the substrate is processed. . 5. The substrate according to claim 1, further comprising an upper surface moving member which is relatively close to the upper surface of the substrate supported by the supporting means. Processing equipment. 6. The substrate processing apparatus according to claim 4, further comprising a liquid temperature adjusting mechanism for adjusting a processing liquid supplied to the upper surface of the substrate to a predetermined temperature. 7. The substrate processing apparatus according to claim 5, wherein the upper surface moving member is provided with an upper surface temperature adjusting mechanism for adjusting a processing liquid supplied to the upper surface of the substrate to a predetermined temperature. 8. A method of processing a substrate by supplying a processing liquid to a substrate supported by a supporting means, wherein the lower surface moving member is moved to a retracted position away from the lower surface of the substrate supported by the supporting means. Moving the lower surface moving means relative to a processing position close to the lower surface of the substrate supported by the supporting means; A step of bringing a processing solution into contact with the lower surface of the supported substrate, a step of rinsing the substrate, a step of drying the substrate, and relatively moving the lower surface moving member to the retracted position. And a step of carrying out the substrate from the supporting means. 9. When processing is performed by bringing a processing liquid into contact with the lower surface of the substrate, the processing liquid is filled between the lower surface moving member moved to the processing position and the lower surface of the substrate supported by the support means. 9. The processing according to claim 8, wherein the processing is performed.
4. The substrate processing method according to 1. 10. The substrate processing method according to claim 8, wherein a substrate is rotated relative to the lower surface moving member when processing is performed by bringing a processing liquid into contact with the lower surface of the substrate. . 11. The substrate processing method according to claim 8, wherein the processing liquid is heated to a predetermined temperature when the processing liquid is brought into contact with the lower surface of the substrate. 12. The substrate processing method according to claim 8, further comprising a step of supplying a processing liquid to an upper surface of the substrate to perform processing. 13. The substrate processing method according to claim 12, wherein the processing is performed in a state where the processing liquid is filled on the upper surface of the substrate. 14. The apparatus according to claim 12, wherein an upper surface moving member is relatively moved with respect to the upper surface of the substrate supported by the supporting means when supplying the processing liquid to the upper surface of the substrate for processing. Or the substrate processing method according to 13. 15. The apparatus according to claim 1, wherein the upper surface moving member does not contact the processing liquid supplied to the upper surface of the substrate.
5. The substrate processing method according to 4.