JP2002219424A - Substrate processing unit and substrate processing method - Google Patents

Substrate processing unit and substrate processing method

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Publication number
JP2002219424A
JP2002219424A JP2001015027A JP2001015027A JP2002219424A JP 2002219424 A JP2002219424 A JP 2002219424A JP 2001015027 A JP2001015027 A JP 2001015027A JP 2001015027 A JP2001015027 A JP 2001015027A JP 2002219424 A JP2002219424 A JP 2002219424A
Authority
JP
Japan
Prior art keywords
substrate
processing
wafer
liquid
moving
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2001015027A
Other languages
Japanese (ja)
Other versions
JP3837026B2 (en
Inventor
Takayuki Toshima
孝之 戸島
Takehiko Orii
武彦 折居
Original Assignee
Tokyo Electron Ltd
東京エレクトロン株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Ltd, 東京エレクトロン株式会社 filed Critical Tokyo Electron Ltd
Priority to JP2001015027A priority Critical patent/JP3837026B2/en
Priority claimed from KR1020020003783A external-priority patent/KR100887360B1/en
Publication of JP2002219424A publication Critical patent/JP2002219424A/en
Application granted granted Critical
Publication of JP3837026B2 publication Critical patent/JP3837026B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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Abstract

PROBLEM TO BE SOLVED: To provide a substrate processing unit or a substrate processing method which can carry in and carry out the substrate smoothly, and can improve the cleaning efficiency. SOLUTION: A substrate processing unit 8 supplies the processing liquid and processes a substrate W. This has a supporting means 22 which supports the substrate W; a bottom moving member 42 which moves relatively between a processing position A which is adjacent to the bottom of the substrate W supported by the supporting member 22, and a retreat position B which is away from the bottom of the substrate W. Processing liquid is supplied in between the bottom moving member 42 which moves to the processing position A and the bottom of the substrate W supported by the supporting means 22, then the bottom of the substrate W is processed.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【0001】[0001]
【発明の属する技術分野】本発明は,例えば半導体ウェ
ハやLCD基板用ガラス等の基板を洗浄処理などする基
板処理装置及び基板処理方法に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a substrate processing apparatus and method for cleaning a substrate such as a semiconductor wafer or glass for an LCD substrate.
【0002】[0002]
【従来の技術】例えば半導体デバイスの製造プロセスに
おいては,半導体ウェハ(以下,「ウェハ」という。)
を薬液や純水等の洗浄液によって洗浄し,ウェハに付着
したパーティクル,有機汚染物,金属不純物のコンタミ
ネーションを除去する洗浄システムが使用されている。
その中でも,ウェハを回転させて洗浄処理を行うスピン
型の基板洗浄装置を備えた枚葉式の洗浄システムが知ら
れている。
2. Description of the Related Art For example, in a semiconductor device manufacturing process, a semiconductor wafer (hereinafter, referred to as "wafer").
A cleaning system is used in which the wafer is cleaned with a cleaning solution such as a chemical solution or pure water to remove particles, organic contaminants, and contamination of metal impurities attached to the wafer.
Among them, a single-wafer cleaning system including a spin-type substrate cleaning apparatus for performing a cleaning process by rotating a wafer is known.
【0003】一般的に洗浄システムには,ウェハの搬送
を行う搬送装置が設けられ,この搬送装置により基板洗
浄装置に対してウェハが搬入出される。一方,基板洗浄
装置には,ウェハを回転自在に保持するスピンチャック
が設けられ,ウェハの搬入出の場合,装置内に進入した
搬送装置のアームとスピンチャックの間でウェハの受け
渡しが行われる。基板洗浄装置では,一般的に半導体デ
バイスが形成されるウェハ面(ウェハ表面)を上面にし
てウェハをスピンチャックにより支持し,スピンチャッ
クにより回転させられたウェハ上面に,洗浄液を供給し
て洗浄処理を施す。
In general, a cleaning system is provided with a transfer device for transferring a wafer, and the transfer device transfers a wafer into and out of the substrate cleaning device. On the other hand, the substrate cleaning apparatus is provided with a spin chuck for rotatably holding the wafer, and when loading and unloading the wafer, the wafer is transferred between the arm of the transfer device that has entered the apparatus and the spin chuck. In a substrate cleaning apparatus, a wafer is generally supported by a spin chuck with a wafer surface (wafer surface) on which semiconductor devices are formed facing upward, and a cleaning liquid is supplied to the upper surface of the wafer rotated by the spin chuck to perform a cleaning process. Is applied.
【0004】このような基板洗浄装置では,回転してい
るウェハに洗浄液を連続して供給するので,液消費量が
嵩むと共に,スピンチャックにより支持されているウェ
ハ下面(半導体デバイスが形成されないウェハ面すなわ
ちウェハ裏面)には洗浄液を供給できなかったので,ウ
ェハの片面しか洗浄できなかった。そこで,例えば特開
平8−78368号公報等において開示された基板洗浄
装置によれば,スピンチャック上に設置された複数の支
持ピンによりウェハを支持し,ウェハ上面と,ウェハ下
面とスピンチャックの隙間とに洗浄液をそれぞれ供給し
て洗浄することにより,液消費量の節約を図ると共に,
ウェハの両面を同時に洗浄する。
In such a substrate cleaning apparatus, since the cleaning liquid is continuously supplied to the rotating wafer, the liquid consumption increases, and the lower surface of the wafer supported by the spin chuck (the surface of the wafer on which no semiconductor devices are formed). That is, since the cleaning liquid could not be supplied to the back surface of the wafer, only one side of the wafer could be cleaned. Therefore, according to a substrate cleaning apparatus disclosed in, for example, JP-A-8-78368, a wafer is supported by a plurality of support pins provided on a spin chuck, and a gap between the upper surface of the wafer and the lower surface of the wafer and the spin chuck is provided. By supplying and cleaning the cleaning liquid respectively, the consumption of the liquid is reduced and
Clean both sides of the wafer simultaneously.
【0005】[0005]
【発明が解決しようとする課題】しかしながら,この特
開平8−78368号公報号の基板洗浄装置によれば,
ウェハ下面とスピンチャックの隙間全体に洗浄液を供給
できるように,この隙間を狭くする必要がある。このた
め,支持ピンの高さが低く抑えられ,例えば前記搬送装
置のアームが支持ピンに対してウェハの授受する場合
に,スピンチャックに衝突するおそれがあり,ウェハの
搬入出が困難となっている。さらに基板洗浄装置には,
ウェハ上面に対して移動する上面移動部材が設けられて
おり,ウェハ上面の洗浄液を上面移動部材とウェハ上面
の間で挟むことにより,洗浄していた。しかしながら,
前述したように半導体デバイスが形成されるウェハ面を
上面にしてウェハをスピンチャックに支持させているの
で,このようなウェハ上面には比較的高い洗浄能力が要
求され,上面移動部材を洗浄液に直接接触させてしまう
と,上面移動部材にパーティクル等が付着している場合
には,このパーティクルによって洗浄液が汚染されてし
まうおそれがある。
However, according to the substrate cleaning apparatus disclosed in Japanese Patent Laid-Open No. 8-78368,
This gap needs to be narrowed so that the cleaning liquid can be supplied to the entire gap between the lower surface of the wafer and the spin chuck. For this reason, the height of the support pins is kept low. For example, when the arms of the transfer device transfer wafers to and from the support pins, they may collide with the spin chuck, making it difficult to carry in and out the wafers. I have. In addition, substrate cleaning equipment includes
An upper surface moving member that moves with respect to the upper surface of the wafer is provided, and cleaning is performed by sandwiching the cleaning liquid on the upper surface of the wafer between the upper surface moving member and the upper surface of the wafer. However,
As described above, since the wafer is supported on the spin chuck with the wafer surface on which the semiconductor devices are formed facing upward, a relatively high cleaning ability is required on such a wafer upper surface, and the upper surface moving member is directly exposed to the cleaning liquid. If they are brought into contact, if particles and the like are attached to the upper surface moving member, the particles may contaminate the cleaning liquid.
【0006】従って本発明の目的は,基板の搬入出を円
滑に行うことができ,洗浄効率をより向上させることが
できる基板処理装置及び基板処理方法を提供することに
ある。
SUMMARY OF THE INVENTION Accordingly, it is an object of the present invention to provide a substrate processing apparatus and a substrate processing method capable of smoothly carrying in and out a substrate and further improving cleaning efficiency.
【0007】[0007]
【課題を解決するための手段】上記課題を解決するため
に,本発明によれば,処理液を供給して基板を処理する
装置であって,基板を支持する支持手段と,前記支持手
段により支持された基板下面に近接した処理位置と前記
支持手段により支持された基板下面から離れた退避位置
との間で相対的に移動する下面移動部材とを備え,前記
処理位置に移動した下面移動部材と前記支持手段により
支持された基板下面の間に処理液が供給されて基板下面
が処理されることを特徴とする,基板処理装置が提供さ
れる。
According to the present invention, there is provided, in accordance with the present invention, an apparatus for processing a substrate by supplying a processing liquid, comprising: a support for supporting the substrate; A lower surface moving member that relatively moves between a processing position close to the lower surface of the supported substrate and a retracted position separated from the lower surface of the substrate supported by the support means; A substrate processing apparatus is provided, wherein a processing liquid is supplied between the substrate and the lower surface of the substrate supported by the supporting means to process the lower surface of the substrate.
【0008】本発明において,基板とは,半導体ウェハ
やLCD基板用ガラス等の基板などが例示され,その
他,CD基板,プリント基板,セラミック基板などでも
良い。また基板表面は,半導体デバイス等が形成可能な
ように鏡面となっており,基板裏面は,粗面となってい
る。また処理液には,例えば各種薬液や純水等の洗浄液
があり,本発明の基板処理装置は,例えばウェハ等に洗
浄液を供給して洗浄処理する基板洗浄装置として具体化
される。
In the present invention, the substrate is exemplified by a substrate such as a semiconductor wafer or glass for an LCD substrate, and may be a CD substrate, a printed substrate, a ceramic substrate, or the like. The surface of the substrate is a mirror surface so that a semiconductor device or the like can be formed, and the back surface of the substrate is a rough surface. Examples of the processing liquid include cleaning liquids such as various chemical liquids and pure water. The substrate processing apparatus of the present invention is embodied as a substrate cleaning apparatus for supplying a cleaning liquid to a wafer or the like to perform a cleaning process.
【0009】本発明の基板処理装置にあっては,例えば
基板を搬送する搬送装置が,基板を基板処理装置に搬入
し,例えば基板表面を上面にして支持手段に基板を渡し
て支持させる(基板裏面は下面になる)。この場合,下
面移動部材は,予め退避位置に相対的に移動しているの
で,搬送装置は下面移動部材と接触することはなく,搬
入が円滑に行われる。その後,下面移動部材は処理位置
に相対的に移動し,下面移動部材と基板下面(基板裏
面)の間に処理液が供給されて基板下面が処理される。
一方,処理後に基板を基板処理装置から搬出する場合
は,下面移動部材は退避位置に相対的に移動し,前記搬
送装置は,下面移動部材と接触することはなく,支持手
段から基板を搬出させることができる。こうして,搬出
も円滑に行われる。
In the substrate processing apparatus of the present invention, for example, a transfer apparatus for transferring the substrate carries the substrate into the substrate processing apparatus, and transfers the substrate to the support means with the substrate surface facing up, for example, to support the substrate (substrate) The back surface is the lower surface). In this case, since the lower surface moving member has been relatively moved to the retracted position in advance, the carrying device does not come into contact with the lower surface moving member, and the carry-in operation is smoothly performed. Thereafter, the lower surface moving member relatively moves to the processing position, and a processing liquid is supplied between the lower surface moving member and the substrate lower surface (substrate back surface) to process the substrate lower surface.
On the other hand, when the substrate is unloaded from the substrate processing apparatus after the processing, the lower surface moving member relatively moves to the retreat position, and the transfer device causes the substrate to be unloaded from the support means without contacting the lower surface moving member. be able to. Thus, the carry-out is performed smoothly.
【0010】この基板処理装置にあっては,前記支持手
段は,回転自在に構成されていることが好ましい。例え
ば支持手段は,支持した基板を回転させる。この基板の
回転により,下面移動部材と基板下面の間に供給された
処理液内に流れが発生し,この液流により,処理液内の
淀みを防止すると共に,処理効率を向上させる。例えば
下面移動部材と基板下面の間に処理液を液盛りさせる場
合,支持手段は,この液盛りが崩れない程度の比較的低
速の回転速度(例えば30〜50rpm以下)で基板を
回転させたり,また間欠的に基板を回転させ,下面移動
部材と基板下面の間に満遍なく処理液を供給した後で新
しい処理液を供給する必要を無くす。液盛りが崩れない
限り,基板下面全体を,既に下面移動部材と基板下面の
間に供給された処理液により処理できるからである。一
方,液盛りが崩れた場合には,新液を供給して液盛りを
適宜修復する。こうして処理液の消費量を節約する。ま
た,基板の回転により処理液を下面移動部材と基板下面
の間から流出させる一方で,下面移動部材と基板下面の
間に新たな処理液を供給することにより,下面移動部材
と基板下面の間の処理液を常に新しい処理液に置換して
好適な処理を実施しても良い。この場合,新液を静かに
供給して処理液の省液化を図ると良い。なお,下面移動
部材上に処理液を供給して液盛りした後に,下面移動部
材を処理位置に相対的に移動させ,基板下面全体に処理
液を接触させて処理することも可能である。
In this substrate processing apparatus, it is preferable that the supporting means is rotatable. For example, the support means rotates the supported substrate. Due to the rotation of the substrate, a flow occurs in the processing liquid supplied between the lower surface moving member and the lower surface of the substrate. This liquid flow prevents stagnation in the processing liquid and improves processing efficiency. For example, when the processing liquid is filled between the lower surface moving member and the lower surface of the substrate, the supporting means rotates the substrate at a relatively low rotation speed (for example, 30 to 50 rpm or less) at which the liquid pool does not collapse. In addition, the substrate is intermittently rotated, and the necessity of supplying a new processing liquid after uniformly supplying the processing liquid between the lower surface moving member and the lower surface of the substrate is eliminated. This is because the entire substrate lower surface can be treated with the processing liquid already supplied between the lower surface moving member and the substrate lower surface as long as the liquid level does not collapse. On the other hand, when the liquid level collapses, a new liquid is supplied and the liquid level is appropriately repaired. Thus, the consumption of the processing solution is saved. The rotation of the substrate causes the processing liquid to flow out from between the lower surface moving member and the lower surface of the substrate, while supplying a new processing liquid between the lower surface moving member and the lower surface of the substrate to allow the processing liquid to flow between the lower surface moving member and the lower surface of the substrate. A suitable treatment may be performed by always replacing the treatment liquid with a new treatment liquid. In this case, it is preferable to supply the new liquid gently to save the processing liquid. After supplying the processing liquid onto the lower surface moving member and filling the lower surface moving member, the lower surface moving member can be relatively moved to the processing position, and the processing can be performed by bringing the processing liquid into contact with the entire lower surface of the substrate.
【0011】また,この基板処理装置にあっては,前記
下面移動部材に,処理液を所定温度にさせる下面温度調
整機構が設けられていることが好ましい。この場合,下
面温度調整機構は,処理液を所定温度に調整して例えば
反応を促進させる。
In this substrate processing apparatus, it is preferable that the lower surface moving member is provided with a lower surface temperature adjusting mechanism for bringing the processing liquid to a predetermined temperature. In this case, the lower surface temperature adjusting mechanism adjusts the processing liquid to a predetermined temperature to promote, for example, a reaction.
【0012】基板両面を洗浄できるように,前記支持手
段により支持された基板上面にも処理液が供給されて基
板上面が処理される構成としても良い。また,前記支持
手段により支持された基板上面に対して相対的に近接自
在な上面移動部材を備えていても良い。更に,基板上面
に供給される処理液を所定温度にさせる液温度調整機構
を備えていても良い。また,前記上面移動部材に,基板
上面に供給された処理液を所定温度にさせる上面温度調
整機構が設けられていても良い。
In order that both surfaces of the substrate can be cleaned, the processing liquid may be supplied also to the upper surface of the substrate supported by the supporting means to process the upper surface of the substrate. Further, an upper surface moving member relatively freely approachable to the upper surface of the substrate supported by the supporting means may be provided. Further, a liquid temperature adjusting mechanism for adjusting the processing liquid supplied to the upper surface of the substrate to a predetermined temperature may be provided. Further, the upper surface moving member may be provided with an upper surface temperature adjusting mechanism for bringing the processing liquid supplied to the upper surface of the substrate to a predetermined temperature.
【0013】また本発明によれば,支持手段により支持
された基板に対して処理液を供給して基板を処理する方
法であって,前記支持手段により支持された基板下面か
ら離れた退避位置に下面移動部材を相対的に移動させる
工程と,前記支持手段に基板を渡して支持させる工程
と,前記支持手段により支持された基板下面に近接した
処理位置に前記下面移動手段を相対的に移動させ,前記
支持手段により支持された基板下面に処理液を接触させ
て処理する工程と,前記基板をリンス処理する工程と,
前記基板を乾燥処理する工程と,前記退避位置に,前記
下面移動部材を相対的に移動させる工程と,前記支持手
段から基板を搬出する工程を有することを特徴とする,
基板処理方法が提供される。
Further, according to the present invention, there is provided a method of processing a substrate by supplying a processing liquid to a substrate supported by a supporting means, wherein the processing liquid is supplied to a retracted position away from a lower surface of the substrate supported by the supporting means. A step of relatively moving the lower surface moving member, a step of passing the substrate to the supporting means and supporting the same, and a step of relatively moving the lower surface moving means to a processing position close to the lower surface of the substrate supported by the supporting means. A step of treating the lower surface of the substrate supported by the supporting means by contacting the lower surface with a processing liquid; and a step of rinsing the substrate.
A step of drying the substrate, a step of relatively moving the lower surface moving member to the retreat position, and a step of unloading the substrate from the support means.
A substrate processing method is provided.
【0014】この基板処理方法にあっては,支持手段に
基板を渡して支持させる場合や,支持手段から基板を離
して受け取る場合には,退避位置に下面移動部材を相対
的に移動させるので,支持手段に対する基板の授受が円
滑に行われる。
In this substrate processing method, the lower surface moving member is relatively moved to the retracted position when the substrate is passed over the supporting means and supported, or when the substrate is received away from the supporting means. Transfer of the substrate to and from the supporting means is performed smoothly.
【0015】この基板処理方法において,前記基板下面
に処理液を接触させて処理するに際し,前記処理位置に
移動した下面移動部材と前記支持手段により支持された
基板下面の間に処理液を液盛りさせた状態で処理すると
良い。即ち,液盛り後は新液の供給を停止してなるべく
既存の処理液のみで基板下面を処理し,処理液の節約を
図る。また,前記基板下面に処理液を接触させて処理す
るに際し,前記下面移動部材に対して相対的に基板を回
転させても良い。基板の回転により処理液内に液流が発
生し,この液流により,処理液内の淀みを防止すると共
に,処理効率を向上させる。また,前記基板下面に処理
液を接触させて処理するに際し,処理液を所定温度にさ
せても良い。例えば処理液を所定温度に調整して反応を
促進させる。
In this substrate processing method, when the processing liquid is brought into contact with the lower surface of the substrate, the processing liquid is filled between the lower surface moving member moved to the processing position and the lower surface of the substrate supported by the support means. It is good to process in the state where it was done. That is, the supply of the new liquid is stopped after the liquid is loaded, and the lower surface of the substrate is processed only with the existing processing liquid as much as possible, thereby saving the processing liquid. Further, when processing is performed by bringing a processing liquid into contact with the lower surface of the substrate, the substrate may be rotated relative to the lower surface moving member. A liquid flow is generated in the processing liquid by the rotation of the substrate, and the liquid flow prevents stagnation in the processing liquid and improves processing efficiency. Further, when processing is performed by bringing the processing liquid into contact with the lower surface of the substrate, the processing liquid may be heated to a predetermined temperature. For example, the treatment liquid is adjusted to a predetermined temperature to promote the reaction.
【0016】また,この基板処理方法において,基板上
面に処理液を供給して処理する工程を有しても良い。そ
うすれば,基板両面を洗浄できるようになる。この場
合,基板上面に処理液を液盛りさせた状態で処理すると
良い。即ち,液盛り後は新液の供給を停止してなるべく
既存の処理液のみで基板上面を処理し,処理液の節約を
図る。また前記支持手段により支持された前記基板上面
に対して上面移動部材を相対的に移動させても良い。こ
の場合,例えば前記上面移動部材は,基板上面に供給さ
れた処理液に接触しない。
Further, the substrate processing method may include a step of supplying a processing liquid to the upper surface of the substrate for processing. Then, both sides of the substrate can be cleaned. In this case, it is preferable that the processing is performed in a state where the processing liquid is filled on the upper surface of the substrate. In other words, the supply of the new liquid is stopped after the filling, and the upper surface of the substrate is processed only with the existing processing liquid as much as possible, thereby saving the processing liquid. Further, the upper surface moving member may be moved relatively to the upper surface of the substrate supported by the supporting means. In this case, for example, the upper surface moving member does not contact the processing liquid supplied to the upper surface of the substrate.
【0017】[0017]
【発明の実施の形態】以下,本発明の好ましい実施の形
態を,基板の一例としてウェハ両面を洗浄するように構
成された基板処理装置としての基板洗浄装置に基づいて
説明する。図1は,本実施の形態にかかる基板洗浄装置
8,9,10,11を組み込んだ洗浄システム1の斜視
図である。洗浄システム1は,キャリアC単位でウェハ
Wを搬入し,ウェハWを一枚ずつ洗浄,乾燥し,キャリ
ア単位でウェハWを搬出するように構成されている。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, a preferred embodiment of the present invention will be described based on a substrate cleaning apparatus as a substrate processing apparatus configured to clean both surfaces of a wafer as an example of a substrate. FIG. 1 is a perspective view of a cleaning system 1 incorporating the substrate cleaning apparatuses 8, 9, 10, and 11 according to the present embodiment. The cleaning system 1 is configured to carry in the wafers W on a carrier C basis, clean and dry the wafers W one by one, and carry out the wafers W on a carrier basis.
【0018】この洗浄システム1には,ウェハWを収納
したキャリアCを4個分載置できる載置部2が設けられ
ている。洗浄システム1の中央には,載置部2に載置さ
れたキャリアCから洗浄前のウェハWを一枚ずつ取り出
し,また,洗浄後のウェハWをキャリアCに収納する取
出収納アーム3が配置されている。この取出収納アーム
3の背部には,取出収納アーム3との間でウェハWの授
受を行う搬送アーム4が待機している。搬送アーム4
は,洗浄システム1の中央に設けられた搬送路6に沿っ
て移動可能に設けられている。搬送アーム4は,3本の
アーム4a,4b,4cを備え,これらアーム4a〜4
cを用いて搬送路6の両側に配置された各種処理装置に
対してウェハWを搬入出する。各種処理装置の例を挙げ
ると,例えば搬送路6の一方の側方には,本実施の形態
にかかる基板洗浄装置8,9が上下に2段に配置され,
これら基板洗浄装置8,9と並んで基板洗浄装置10,
11が上下に2段に配置されている。また,搬送路6の
他方の側方には,ウェハWを加熱して乾燥させる加熱装
置12が4基積み重ねて設けられている。これら加熱装
置12に隣接し,プリント回路板等が組み込まれて洗浄
システム1の電気制御系統を司るコントロールエリア1
3が配置されている。なお,ウェハWでは,ウェハW表
面は例えば半導体デバイスなどが形成可能なように鏡面
となっており,ウェハW裏面は粗面となっている。
The cleaning system 1 is provided with a mounting portion 2 on which four carriers C containing wafers W can be mounted. At the center of the cleaning system 1, a take-out and storage arm 3 for taking out the wafers W before cleaning from the carrier C mounted on the mounting portion 2 one by one and storing the wafers W after cleaning in the carrier C is arranged. Have been. At the back of the unloading arm 3, a transfer arm 4 for exchanging wafers W with the unloading arm 3 is on standby. Transfer arm 4
Is provided movably along a transport path 6 provided at the center of the cleaning system 1. The transfer arm 4 includes three arms 4a, 4b, and 4c.
The wafer W is loaded and unloaded to and from various processing apparatuses disposed on both sides of the transfer path 6 using c. To give examples of various processing apparatuses, for example, substrate cleaning apparatuses 8 and 9 according to the present embodiment are vertically arranged in two stages on one side of a transport path 6.
Along with these substrate cleaning devices 8 and 9, substrate cleaning devices 10,
11 are arranged vertically in two stages. On the other side of the transfer path 6, four heating devices 12 for heating and drying the wafer W are provided in a stacked manner. A control area 1 adjacent to the heating device 12 and incorporating a printed circuit board or the like and controlling an electric control system of the cleaning system 1 is provided.
3 are arranged. In the wafer W, the front surface of the wafer W is a mirror surface so that, for example, a semiconductor device can be formed, and the back surface of the wafer W is a rough surface.
【0019】基板洗浄装置8〜11は,ウェハWの表裏
面に洗浄液を液盛りして洗浄する,いわゆるパドル洗浄
を実施するように何れも同様に構成されているので,基
板洗浄装置8を例にとって説明する。図2は,基板洗浄
装置8の平面図であり,図3は,基板洗浄装置8の縦断
面図である。図2及び図3に示すように,基板洗浄装置
8のケース20内に,ウェハWを収納するカップ21
と,このカップ21内で例えばウェハW表面を上面にし
てウェハWを回転自在に支持する支持手段としてのスピ
ンチャック22とを備えている。そして,ケース20の
一方側には,スピンチャック22により支持されたウェ
ハW上面(ウェハW表面)に洗浄液を供給する上面供給
手段としての上面供給ノズル23が配置され,ケース2
0の他方側には,モータ等の移動機構24によってスピ
ンチャック22により支持されたウェハW上面に対して
相対的に移動する上面移動部材25が配置されている。
なお,ケース20の前面側(図1に示す洗浄システム1
において,搬送路6に臨む側面)には,開閉自在なシャ
ッタ26が設けられており,前述の搬送アーム4によっ
て基板洗浄装置8に対して搬入出される際には,このシ
ャッタ26が開くようになっている。
Each of the substrate cleaning apparatuses 8 to 11 is similarly configured to perform so-called paddle cleaning in which the front and back surfaces of the wafer W are filled with a cleaning liquid, that is, so-called paddle cleaning. To explain. FIG. 2 is a plan view of the substrate cleaning apparatus 8, and FIG. 3 is a longitudinal sectional view of the substrate cleaning apparatus 8. As shown in FIGS. 2 and 3, a cup 21 for accommodating a wafer W in a case 20 of the substrate cleaning apparatus 8.
And a spin chuck 22 as a supporting means for rotatably supporting the wafer W with the surface of the wafer W facing upward in the cup 21, for example. On one side of the case 20, an upper surface supply nozzle 23 as an upper surface supply means for supplying a cleaning liquid to the upper surface of the wafer W (the surface of the wafer W) supported by the spin chuck 22 is arranged.
An upper surface moving member 25 that moves relatively to the upper surface of the wafer W supported by the spin chuck 22 by a moving mechanism 24 such as a motor is disposed on the other side of the motor W.
The front side of the case 20 (the cleaning system 1 shown in FIG. 1)
, A shutter 26 that can be opened and closed is provided on the side surface facing the transfer path 6. When the transfer arm 4 carries the substrate into and out of the substrate cleaning device 8, the shutter 26 is opened. Has become.
【0020】カップ21の側面には,ブラケット30が
固着され,このブラケット30は,モータ31により回
転するボールネジ軸32に螺合されたナット33に連結
されている。従って,カップ21は,モータ31の正逆
回転により,図3中において二点鎖線21’で示した位
置に下降して,スピンチャック22をカップ21の上方
に突出させてウェハWを授受させる状態と,図3中にお
いて実線21で示した位置に上昇して,スピンチャック
22及びウェハWを包囲し,ウェハW両面に供給した洗
浄液等が周囲に飛び散ることを防止する状態とに上下に
移動自在である。
A bracket 30 is fixed to a side surface of the cup 21, and the bracket 30 is connected to a nut 33 screwed to a ball screw shaft 32 rotated by a motor 31. Accordingly, the cup 21 is lowered to the position shown by the two-dot chain line 21 ′ in FIG. 3 by forward and reverse rotation of the motor 31, and the spin chuck 22 is projected above the cup 21 to transfer the wafer W. 3 to a position shown by the solid line 21 in FIG. 3 to move vertically so as to surround the spin chuck 22 and the wafer W and to prevent the cleaning liquid supplied to both sides of the wafer W from scattering around. It is.
【0021】カップ21の底部には,カップ21内の液
滴を排液する排液管34と,カップ21内の雰囲気を排
気する排気管35とが接続されている。排液管34に
は,気液分離ボックス36が設けられ,この気液分離ボ
ックス36により排液された液滴中から気泡等を除去す
るようになっている。除去された気泡は,気液分離ボッ
クス36に接続された排気管37により外部に排気され
る。また,カップ21の底部には,環状の仕切り壁38
が起立して設けられ,仕切り壁38の上端には,外側に
向かって下方に傾斜する整流板39が配設されている。
A drain pipe 34 for draining liquid droplets in the cup 21 and an exhaust pipe 35 for exhausting the atmosphere in the cup 21 are connected to the bottom of the cup 21. A gas-liquid separation box 36 is provided in the drain pipe 34, and air bubbles and the like are removed from the liquid droplets discharged by the gas-liquid separation box 36. The removed air bubbles are exhausted to the outside by an exhaust pipe 37 connected to the gas-liquid separation box 36. An annular partition wall 38 is provided at the bottom of the cup 21.
A rectifying plate 39 is provided at the upper end of the partition wall 38 and is inclined downward toward the outside.
【0022】図4に示すように,スピンチャック22
は,ウェハWを支持するチャック本体40と,このチャ
ック本体40の底部に接続された回転筒体41とを備
え,このチャック本体40内には,スピンチャック22
により支持されたウェハW下面(ウェハW裏面)に対し
て相対的に移動する下面移動部材42が配置されてい
る。回転筒体41の外周面にはベルト43が巻回されて
おり,このベルト43をモータ44によって周動させる
ことにより,スピンチャック22全体が回転するように
なっている。
As shown in FIG.
Comprises a chuck body 40 for supporting a wafer W, and a rotating cylinder 41 connected to the bottom of the chuck body 40. A spin chuck 22 is provided in the chuck body 40.
A lower surface moving member 42 that moves relatively to the lower surface of the wafer W (the rear surface of the wafer W) supported by the above is disposed. A belt 43 is wound around the outer peripheral surface of the rotary cylinder 41, and the belt 43 is rotated by a motor 44 so that the entire spin chuck 22 rotates.
【0023】チャック本体40の上部には,ウェハWの
周縁部を複数箇所において保持するための保持部材45
が装着されている。保持部材45の下部には,チャック
本体40の周縁から中心に向かって次第に低くなる傾斜
面45aが形成されており,この傾斜面45aにより保
持部材45はウェハWを保持するようになっている。な
お,各保持部材45内に例えば重錘を設けることによ
り,スピンチャック22が回転したときの遠心力によっ
て各保持部材45の上部側が内側に移動し,ウェハWの
周縁部を外側から保持するように構成しても良い。ま
た,チャック本体40の底部には周方向の適宜位置に排
出口46を設け,この排出口46によりチャック本体4
0内の液滴の排液及び雰囲気の排気を行うようになって
いる。
On the upper part of the chuck body 40, a holding member 45 for holding the peripheral portion of the wafer W at a plurality of positions.
Is installed. A lower surface of the holding member 45 is formed with an inclined surface 45a that becomes gradually lower from the periphery of the chuck body 40 toward the center, and the holding member 45 holds the wafer W by the inclined surface 45a. By providing, for example, a weight in each holding member 45, the upper side of each holding member 45 moves inward by centrifugal force when the spin chuck 22 rotates, and holds the peripheral edge of the wafer W from outside. May be configured. A discharge port 46 is provided at an appropriate position in the circumferential direction at the bottom of the chuck body 40, and the discharge port 46 allows the chuck body 4 to be moved.
Draining of the liquid droplets within 0 and exhaustion of the atmosphere are performed.
【0024】下面移動部材42は,チャック本体40内
及び回転筒体41内を貫挿するシャフト47上に接続さ
れている。シャフト47は,水平板48の上面に固着さ
れており,この水平板48は,シリンダ等からなる昇降
機構49により鉛直方向に昇降する。従って,下面移動
部材42は,図4中において二点鎖線42’で示したよ
うにチャック本体40内の上方に上昇して,スピンチャ
ック22により支持されたウェハW下面に対して洗浄処
理を施している状態(処理位置A)と,図4中において
実線42で示したようにチャック本体40内の下方に下
降して,スピンチャック22により支持されたウェハW
下面から離れて待機している状態(退避位置B)とに上
下に移動自在である。前述したようにカップ21を二点
鎖線21’に示した位置に下降させてスピンチャック2
2を対してウェハWを授受させる場合,下面移動部材4
2を退避位置Bに位置させておく。そうすれば,下面移
動部材42とスピンチャック22により支持されるウェ
ハWの位置(高さ)との間には,十分な隙間が形成され
ることになり,スピンチャック22に対するウェハWの
授受が円滑に行われるようになっている。なお,下面移
動部材42を所定高さに固定する一方で,前記回転筒体
41に図示しない昇降機構を接続させてスピンチャック
22全体を鉛直方向に昇降させることにより,下面移動
部材42を処理位置Aと退避位置Bに上下に移動自在に
しても良い。
The lower surface moving member 42 is connected to a shaft 47 that penetrates through the chuck body 40 and the rotary cylinder 41. The shaft 47 is fixed to the upper surface of a horizontal plate 48, and the horizontal plate 48 is vertically moved up and down by a lifting mechanism 49 such as a cylinder. Accordingly, the lower surface moving member 42 rises upward in the chuck main body 40 as shown by a two-dot chain line 42 ′ in FIG. 4, and performs a cleaning process on the lower surface of the wafer W supported by the spin chuck 22. 4 (processing position A), and the wafer W supported by the spin chuck 22 is lowered downward in the chuck body 40 as shown by a solid line 42 in FIG.
It can be moved up and down freely in a state of being separated from the lower surface and waiting (retreat position B). As described above, the cup 21 is lowered to the position indicated by the two-dot chain line 21 ', and the spin chuck 2 is rotated.
When the wafer W is transferred to and from the lower surface moving member 4,
2 is located at the evacuation position B. Then, a sufficient gap is formed between the lower surface moving member 42 and the position (height) of the wafer W supported by the spin chuck 22, and the transfer of the wafer W to and from the spin chuck 22 is performed. This has been done smoothly. While the lower surface moving member 42 is fixed at a predetermined height, the lower surface moving member 42 is moved to the processing position by vertically moving the entire spin chuck 22 by connecting an elevating mechanism (not shown) to the rotary cylinder 41. A and the retreat position B may be movable up and down.
【0025】下面移動部材42に例えば薬液や純水等の
洗浄液や乾燥ガスを供給する下面供給路50が,シャフ
ト47内を貫通して設けられている。この下面供給路5
0には,三方弁51を介して薬液供給路52,純水供給
路53,ガス供給路54がそれぞれ接続され,三方弁5
1の切換操作により下面移動部材42に供給される流体
が切り換えられる。薬液供給路52には,ウェハW上面
に供給される薬液の温度を調整する例えばヒータからな
る温度調整器55が設けられている。下面供給路50
は,下面供給手段として機能し,例えば三方弁51が薬
液供給路52側に切り換えられると,薬液供給路52か
ら所定温度に温調された薬液を供給することになる。例
えば下面移動部材42は処理位置Aに上昇して,処理位
置Aに移動した下面移動部材42とスピンチャック22
により支持されたウェハW下面の間に例えば0.5〜3
mm程度の隙間L1を形成する。そして下面供給路50
は,薬液供給路52を通して下面移動部材42とウェハ
W下面の間に薬液を供給する。このように狭い隙間L1
に薬液を供給すると,薬液は隙間L1全体に拡がって液
盛りされ,ウェハW下面全体に均一に接触可能な薬液の
液膜を形成して好適な洗浄処理を施すようになってい
る。しかも液膜形成後も,隙間L1で薬液の液膜を挟む
ので,表面張力によって薬液の液膜の形状崩れを防止し
て引き続き好適な洗浄処理を施すことが可能である。ま
た,同様に純水供給路53を通して純水を供給し,下面
移動部材42上に純水を供給する。ガス供給路54から
は例えば常温のNガス(加熱されたホットNガスで
も良い)を供給し,洗浄後にウェハW下面を乾燥させ
る。
A lower surface supply path 50 for supplying a cleaning liquid such as a chemical solution or pure water or a drying gas to the lower surface moving member 42 is provided through the inside of the shaft 47. This lower surface supply path 5
0, a chemical solution supply path 52, a pure water supply path 53, and a gas supply path 54 are connected via a three-way valve 51, respectively.
The fluid supplied to the lower surface moving member 42 is switched by the switching operation of 1. The chemical supply path 52 is provided with a temperature controller 55 that adjusts the temperature of the chemical supplied to the upper surface of the wafer W, for example, a heater. Bottom supply path 50
Functions as a lower surface supply means. For example, when the three-way valve 51 is switched to the chemical liquid supply path 52 side, the chemical liquid adjusted to a predetermined temperature is supplied from the chemical liquid supply path 52. For example, the lower surface moving member 42 rises to the processing position A, and moves to the processing position A and the lower surface moving member 42 and the spin chuck 22.
Between 0.5 and 3 between the lower surfaces of the wafers W supported by
A gap L1 of about mm is formed. And the lower surface supply path 50
Supplies the chemical between the lower surface moving member 42 and the lower surface of the wafer W through the chemical supply path 52. Such a narrow gap L1
When the chemical solution is supplied to the wafer W, the chemical solution spreads over the entire gap L1 and is filled, forming a liquid film of the chemical solution that can uniformly contact the entire lower surface of the wafer W to perform a suitable cleaning process. Moreover, even after the formation of the liquid film, the liquid film of the chemical solution is sandwiched between the gaps L1, so that the shape of the liquid film of the chemical solution can be prevented from being deformed by the surface tension, and a suitable cleaning process can be continuously performed. Similarly, pure water is supplied through the pure water supply path 53, and pure water is supplied onto the lower surface moving member 42. For example, a normal temperature N 2 gas (a heated hot N 2 gas may be supplied) is supplied from the gas supply path 54, and the lower surface of the wafer W is dried after cleaning.
【0026】一方,下面移動部材42に供給された洗浄
液や乾燥ガスを排出する下面排出路56が,シャフト4
7内を貫通して設けられている。この下面排出路56に
は,三方弁57を介して薬液排液路58,純水排液路5
9,ガス排気路60がそれぞれ接続されている。下面移
動部材42に形成された薬液の液膜や純水の液膜は,薬
液排液路58,純水排液路59により外部にそれぞれ排
液される。チャック本体40内に充満したNガスは,
ガス排気路60により外部に排気される。なお,薬液に
は,例えばアンモニア成分を主体としたAPM(NH
OH/H/HOの混合液),塩酸成分を主体と
したHPM(HCl/H/HOの混合液),フ
ッ酸成分を主体としたDHF(HF/HOの混合液)
等がある。
On the other hand, the lower surface discharge path 56 for discharging the cleaning liquid and the drying gas supplied to the lower surface moving member 42 is connected to the shaft 4.
7 is provided. The lower-side discharge path 56 is provided with a chemical liquid discharge path 58 and a pure water discharge path 5 through a three-way valve 57.
9. Gas exhaust paths 60 are connected to each other. The liquid film of the chemical liquid and the liquid film of the pure water formed on the lower surface moving member 42 are drained to the outside through the liquid drain path 58 and the pure water drain path 59, respectively. The N 2 gas filled in the chuck body 40 is
The gas is exhausted to the outside by the gas exhaust path 60. The chemical solution includes, for example, APM (NH 4
OH / H 2 O 2 / H 2 O), HPM mainly composed of hydrochloric acid (mixture of HCl / H 2 O 2 / H 2 O), DHF mainly composed of hydrofluoric acid (HF / H 2 O mixture)
Etc.
【0027】下面移動部材42の内部には,給電により
発熱するヒータ61が埋設されている。このヒータ61
は,下面温度調整機構として機能して,例えば前述した
ように下面移動部材42とウェハW下面の間に供給され
た薬液を所定温度に調整する。
Inside the lower surface moving member 42, a heater 61 that generates heat by power supply is embedded. This heater 61
Functions as a lower surface temperature adjusting mechanism, and adjusts the chemical supplied between the lower surface moving member 42 and the lower surface of the wafer W to a predetermined temperature, for example, as described above.
【0028】図5,6に示すように上面供給ノズル23
は,細長の形状を有しており,その長さは,例えばウェ
ハWの直径よりも大きくなっている。上面供給ノズル2
3の下部には,複数の供給口65は長手方向に一列に設
けられ,上面供給ノズル23の上部には,例えば薬液及
び純水やNガスを供給する上面供給路66が接続され
ている。この上面供給路66には,三方弁67を介して
薬液供給路68,純水供給路69,ガス供給路70がそ
れぞれ接続され,三方弁67の切換操作により上面供給
ノズル23内に供給される流体が切り換えられる。薬液
供給路68や純水供給路69から供給される薬液や純水
は,上面供給ノズル23内に設けられた液溜め部71に
一旦貯留される。この液溜め部71は,長手方向に長い
空間を形成しており,全ての供給口65に連通してい
る。そして液溜め部71に貯留された洗浄液は,各供給
口65を通してウェハW上面に供給される。従って,複
数の供給口65から一度に所定量の洗浄液を吐出するこ
とにより,ウェハWの直径よりも長い直線状に洗浄液を
吐出するようになっている。
As shown in FIGS.
Has an elongated shape, and its length is larger than the diameter of the wafer W, for example. Top supply nozzle 2
A plurality of supply ports 65 are provided in a row in the longitudinal direction below 3, and an upper supply path 66 for supplying, for example, a chemical solution, pure water, or N 2 gas is connected to an upper part of the upper supply nozzle 23. . A chemical solution supply path 68, a pure water supply path 69, and a gas supply path 70 are respectively connected to the upper surface supply path 66 via a three-way valve 67, and are supplied into the upper surface supply nozzle 23 by a switching operation of the three-way valve 67. The fluid is switched. The chemical and pure water supplied from the chemical supply passage 68 and the pure water supply passage 69 are temporarily stored in a liquid reservoir 71 provided in the upper surface supply nozzle 23. The liquid reservoir 71 forms a long space in the longitudinal direction, and communicates with all the supply ports 65. The cleaning liquid stored in the liquid reservoir 71 is supplied to the upper surface of the wafer W through each supply port 65. Therefore, by discharging a predetermined amount of cleaning liquid at a time from the plurality of supply ports 65, the cleaning liquid is discharged linearly longer than the diameter of the wafer W.
【0029】また図6に示すように,液溜め部71内に
は,液溜め部71内の洗浄液の温度を調整する液温度調
整機構としての温度調整路Sが前記長手方向に沿って設
けられている。この温度調整路Sは,所定温度に調整さ
れた流体,例えば水等が内部に流れるようにチューブ等
で構成されている。また,温度調整路Sは,温度調整路
Sの内部と外部との間で熱交換可能である。温度調整路
Sは,上面供給ノズル23の一端近上方から液溜め部7
1内に入り,前記長手方向に形成された液溜め部71内
を通って,上面供給ノズル23の他端付近上方から上面
供給ノズル23外に出るように形成されている。従っ
て,温調された水が温度調整路S内を通ることにより,
液溜め部71内の洗浄液が温調される。特に薬液を所定
温度に温調してウェハW上面に供給すると高い洗浄能力
を得られるので,このように温度調整路Sを設けること
は有効である。
As shown in FIG. 6, a temperature adjusting path S as a liquid temperature adjusting mechanism for adjusting the temperature of the cleaning liquid in the liquid reservoir 71 is provided in the liquid reservoir 71 along the longitudinal direction. ing. The temperature adjustment path S is formed of a tube or the like so that a fluid adjusted to a predetermined temperature, for example, water or the like flows therein. The temperature adjustment path S is capable of exchanging heat between the inside and the outside of the temperature adjustment path S. The temperature adjusting path S is provided from above the liquid supply part 7 near one end of the upper surface supply nozzle 23.
1, passes through the inside of the liquid reservoir 71 formed in the longitudinal direction, and exits from above the vicinity of the other end of the upper surface supply nozzle 23 and out of the upper surface supply nozzle 23. Therefore, when the temperature-controlled water passes through the temperature control path S,
The temperature of the cleaning liquid in the liquid reservoir 71 is adjusted. In particular, when the temperature of the chemical solution is adjusted to a predetermined temperature and supplied to the upper surface of the wafer W, a high cleaning ability can be obtained, and thus providing the temperature adjustment path S is effective.
【0030】前記上面供給ノズル23は,先の図2に示
すように,支持アーム72により支持されており,この
支持アーム72は,モータ等の図示しない駆動機構によ
り,例えば基板洗浄装置8の長手方向(図2中のX方
向)に水平に伸びたレール73に沿って移動自在に構成
されている。また,上面供給ノズル23とウェハWの距
離を調節するために支持アーム72は,鉛直方向にも移
動自在に構成されている。従って,例えば図7に示すよ
うにウェハWの上方の所定位置に,上面供給ノズル23
を平行移動させる。そして,スピンチャック22により
少なくともゆっくりと半回転させられたウェハWに対し
て,直線状に薬液を供給して液盛りすることにより,ウ
ェハW上面に薬液の液膜を均一に形成するようになって
いる。
As shown in FIG. 2, the upper surface supply nozzle 23 is supported by a support arm 72. The support arm 72 is driven by a drive mechanism (not shown) such as a motor, for example, in the longitudinal direction of the substrate cleaning apparatus 8. It is configured to be movable along a rail 73 extending horizontally in the direction (X direction in FIG. 2). Further, the support arm 72 is configured to be movable in the vertical direction in order to adjust the distance between the upper surface supply nozzle 23 and the wafer W. Therefore, for example, as shown in FIG.
Is translated. Then, a chemical solution is supplied linearly to the wafer W that has been rotated at least slowly and half-turned by the spin chuck 22 in a linear manner, and the liquid is filled, so that a liquid film of the chemical solution is uniformly formed on the upper surface of the wafer W. ing.
【0031】前記上面移動部材25は,前記移動機構2
4により水平及び鉛直方向に移動自在である。前述した
ように上面供給ノズル23によりウェハW上面に薬液の
液膜が形成されると,図4に示すように上面移動部材2
5は,水平移動しながらスピンチャック22の上方に移
動し,図4中において二点鎖線25’で示したようにウ
ェハWの距離を図りながら鉛直方向に下降して,前記ウ
ェハW上面に形成された薬液の液膜に接触しない位置で
あって,このウェハW上面に対して近接した位置まで移
動する。また,このようにウェハW上面に対して近接し
た状態からスピンチャック22の上方に鉛直方向に上昇
して,カップ21から離れた位置に水平移動して待機す
るようにもなっている。このように上面移動部材25
は,スピンチャック22により支持されたウェハW上面
に対して進退移動可能である。
The upper surface moving member 25 is provided with the moving mechanism 2.
4 allows it to move horizontally and vertically. As described above, when the liquid film of the chemical solution is formed on the upper surface of the wafer W by the upper surface supply nozzle 23, as shown in FIG.
5 moves vertically above the spin chuck 22 while moving horizontally, and descends vertically while increasing the distance of the wafer W as shown by a two-dot chain line 25 'in FIG. The wafer W is moved to a position that does not come into contact with the liquid film of the chemical solution and is close to the upper surface of the wafer W. In addition, as described above, it rises vertically above the spin chuck 22 from a state close to the upper surface of the wafer W, moves horizontally to a position distant from the cup 21, and stands by. Thus, the upper surface moving member 25
Can move forward and backward with respect to the upper surface of the wafer W supported by the spin chuck 22.
【0032】上面移動部材25の上部には,薬液供給路
75が接続されている。従って,上面移動部材25は,
薬液をウェハW上面に供給するように構成されている。
A chemical supply path 75 is connected to the upper part of the upper surface moving member 25. Therefore, the upper surface moving member 25
It is configured to supply a chemical solution to the upper surface of the wafer W.
【0033】上面移動部材25の内部には,下面移動部
材42と同様に給電により発熱するヒータ76が埋設さ
れている。このヒータ76は,上面温度調整機構として
機能し,図4の二点鎖線25’で示したように,上面移
動部材25がウェハW上面に対して近接した位置まで移
動した場合には,ヒータ76は発熱してウェハW上面に
形成された薬液の液膜を所定温度に調整するようになっ
ている。またこのように上面移動部材25はウェハWの
上方を覆うことにより,薬液の液膜から薬液が蒸発する
ことを防ぐようになっている。この場合,ウェハW上面
に対して近接した位置まで移動した上面移動部材25と
スピンチャック22により支持されたウェハW上面に形
成された薬液の液膜の間には,隙間L2が形成され,上
面移動部材25は,この薬液の液膜と直接接触するよう
なことがない。そうすることによって,例えば上面移動
部材25に付着したパーティクル等が薬液の液膜に転写
して,薬液の洗浄能力が低下する事態を防止するように
なっている。
Inside the upper surface moving member 25, a heater 76 that generates heat by power supply is buried similarly to the lower surface moving member 42. The heater 76 functions as an upper surface temperature adjusting mechanism. When the upper surface moving member 25 moves to a position close to the upper surface of the wafer W as shown by a two-dot chain line 25 ′ in FIG. Generates heat and adjusts the liquid film of the chemical formed on the upper surface of the wafer W to a predetermined temperature. Further, as described above, the upper surface moving member 25 covers the upper part of the wafer W, thereby preventing the chemical solution from evaporating from the liquid film of the chemical solution. In this case, a gap L2 is formed between the upper surface moving member 25 that has moved to a position close to the upper surface of the wafer W and the liquid film of the chemical formed on the upper surface of the wafer W supported by the spin chuck 22. The moving member 25 does not come into direct contact with the liquid film of the chemical solution. By doing so, for example, it is possible to prevent a situation in which particles or the like adhering to the upper surface moving member 25 are transferred to the liquid film of the chemical solution, and the cleaning ability of the chemical solution is reduced.
【0034】なお,洗浄システム1に備えられた他の基
板洗浄装置9,10,11も,基板洗浄装置8と同様の
構成を有し,洗浄液の液膜によりウェハW両面を同時に
パドル洗浄することができる。
The other substrate cleaning devices 9, 10, and 11 provided in the cleaning system 1 also have the same configuration as the substrate cleaning device 8, and perform paddle cleaning of both surfaces of the wafer W simultaneously with a liquid film of the cleaning liquid. Can be.
【0035】さて,この洗浄システム1において,先ず
図示しない搬送ロボットにより未だ洗浄されていないウ
ェハWを例えば25枚ずつ収納したキャリアCが載置部
2に載置される。そして,この載置部2に載置されたキ
ャリアCから取出収納アーム3によって一枚ずつウェハ
Wが取り出され,取出収納アーム3から搬送アーム4に
ウェハWが受け渡される。そして,搬送アーム4によっ
てウェハWは各基板洗浄装置8〜11に適宜搬入され,
ウェハWに付着しているパーティクルなどの汚染物質が
洗浄,除去される。こうして所定の洗浄処理が終了した
ウェハWは,再び搬送アーム4によって各基板洗浄装置
8〜11から適宜搬出され,取出収納アーム3に受け渡
されて,再びキャリアCに収納される。
In the cleaning system 1, first, a carrier C containing, for example, 25 wafers W that have not been cleaned yet by a transfer robot (not shown) is placed on the placing section 2. Then, the wafers W are taken out one by one from the carrier C placed on the placing section 2 by the take-out and storage arm 3, and the wafers W are transferred from the take-out and storage arm 3 to the transfer arm 4. Then, the wafer W is appropriately carried into each of the substrate cleaning devices 8 to 11 by the transfer arm 4,
Contaminants such as particles attached to the wafer W are washed and removed. The wafer W having been subjected to the predetermined cleaning process is appropriately unloaded from the substrate cleaning devices 8 to 11 again by the transfer arm 4, delivered to the unloading storage arm 3, and stored again in the carrier C.
【0036】ここで,代表して基板洗浄装置8での洗浄
について図8〜図15に基づいて説明する。先ず基板洗
浄装置8のシャッタ26が開き,搬送アーム4は,例え
ばウェハWを保持したアーム4cを装置内に進入させ
る。カップ21は下降してチャック本体40を上方に相
対的に突出させる。図8に示すように,下面移動部材4
2は予め下降してチャック本体40内の退避位置Bに位
置している。
Here, the cleaning by the substrate cleaning apparatus 8 will be described as a representative with reference to FIGS. First, the shutter 26 of the substrate cleaning device 8 is opened, and the transfer arm 4 causes, for example, the arm 4c holding the wafer W to enter the device. The cup 21 descends to relatively protrude the chuck body 40 upward. As shown in FIG.
2 is previously lowered and located at a retracted position B in the chuck body 40.
【0037】図9に示すように,搬送アーム4は,アー
ム4cを降ろして保持部材45にウェハWを渡し,スピ
ンチャック22では半導体デバイスが形成されるウェハ
W表面を上面にしてウェハWを支持する。この場合,下
面移動部材42を退避位置Bに位置させ,スピンチャッ
ク22により支持されるウェハWの位置(高さ)から十
分に離すので,搬送アーム4は,余裕をもってウェハW
をスピンチャック22に渡すことができる。
As shown in FIG. 9, the transfer arm 4 lowers the arm 4c to transfer the wafer W to the holding member 45, and the spin chuck 22 supports the wafer W with the surface of the wafer W on which the semiconductor device is formed facing upward. I do. In this case, since the lower surface moving member 42 is located at the retreat position B and is sufficiently separated from the position (height) of the wafer W supported by the spin chuck 22, the transfer arm 4 allows the wafer W
To the spin chuck 22.
【0038】次いで図10に示すように,下面移動部材
42は,チャック本体40内の処理位置Aに上昇する。
処理位置Aに移動した下面移動部材42とスピンチャッ
ク22により支持されたウェハW下面(ウェハW裏面)
の間には,例えば0.5〜3mm程度の隙間L1が形成
される。一方,下面供給路50により薬液を下面移動部
材42とウェハW下面の間に供給する。即ち,三方弁5
1を薬液供給路52側に切り換えて温度調整器55によ
り所定温度に温調された薬液を流す。下面移動部材42
上では,下面供給路50から薬液を例えば静かに染み出
させて隙間L1に薬液を供給する。狭い隙間L1では,
薬液を全体に押し広げて液盛し,ウェハW下面全体に均
一に接触する薬液の液膜を形成する。隙間L1全体に薬
液の液膜を形成すると,薬液の供給を停止してウェハW
下面を洗浄処理する。隙間L1に薬液を液盛りして液膜
を形成すると表面張力により薬液の液膜の形状崩れを防
ぐことができる。例えば薬液の液膜の形状が崩れてしま
うと,ウェハW下面において薬液の液膜に非接触の部分
が発生したり,又は液膜中に気泡が混合してしまい洗浄
不良を起こしてしまうが,このように下面移動部材42
とウェハW下面の間で薬液を液盛りすることにより,薬
液の液膜の形状を保って洗浄不良を防止することができ
る。
Next, as shown in FIG. 10, the lower surface moving member 42 moves up to the processing position A in the chuck body 40.
Lower surface moving member 42 moved to processing position A and lower surface of wafer W supported by spin chuck 22 (wafer W rear surface)
Between them, for example, a gap L1 of about 0.5 to 3 mm is formed. On the other hand, the chemical liquid is supplied between the lower surface moving member 42 and the lower surface of the wafer W through the lower surface supply path 50. That is, the three-way valve 5
1 is switched to the side of the chemical supply path 52 to flow the chemical whose temperature has been adjusted to a predetermined temperature by the temperature controller 55. Lower surface moving member 42
On the upper side, for example, the chemical liquid is gently exuded from the lower surface supply path 50 and supplied to the gap L1. In the narrow gap L1,
The chemical solution is spread and spread over the entire surface to form a liquid film of the chemical solution that uniformly contacts the entire lower surface of the wafer W. When a liquid film of the chemical is formed in the entire gap L1, the supply of the chemical is stopped and the wafer W is stopped.
The lower surface is cleaned. When a liquid film is formed by pouring a liquid chemical in the gap L1, it is possible to prevent the liquid film of the liquid chemical from being deformed due to surface tension. For example, if the shape of the liquid film of the chemical liquid is broken, a portion of the lower surface of the wafer W that is not in contact with the liquid film of the chemical liquid is generated, or bubbles are mixed in the liquid film, resulting in poor cleaning. Thus, the lower surface moving member 42
By pouring the chemical between the wafer and the lower surface of the wafer W, it is possible to maintain the shape of the liquid film of the chemical and prevent poor cleaning.
【0039】この場合,スピンチャック22は,薬液の
液膜の形状が崩れない程度の比較的低速の回転速度(例
えば30〜50rpm以下)でウェハWを回転させる。
ウェハWの回転により薬液の液膜内に液流が発生し,こ
の液流により,薬液の液膜内の淀みを防止すると共に洗
浄効率が向上する。また,ウェハWの回転を間欠的に行
っても良い。例えば所定時間若しくは所定回転数,ウェ
ハWを回転させた後,スピンチャック22の回転稼働を
所定時間停止させてウェハWを静止させ,その後に再び
ウェハWを回転させる。このようにウェハWの回転と回
転停止を繰り返すと,薬液をウェハW下面全体に容易に
拡散させることができる。もちろん,ウェハWを全く回
転させずに静止した状態に保って洗浄処理を施すことも
可能である。また,液膜を形成した後では新しい薬液を
供給する必要が無くなる。薬液の液膜の形状が崩れない
限り,ウェハW下面全体を,既に下面移動部材42とウ
ェハW下面の間に供給された薬液により洗浄できるから
である。一方,薬液の液膜の形状が崩れそうになった場
合等には,新液を供給して薬液の液膜の形状を適宜修復
する。このように薬液の消費量を節約する。なお,ウェ
ハWの回転により薬液の液膜の液滴を下面移動部材42
の周縁から滴り落とす一方で,下面供給路50により薬
液を継続的に供給することにより,薬液の液膜内を常に
真新しい薬液に置換して好適な薬液処理を実施すること
も可能である。この場合も,新液をなるべく静かに供給
して薬液の省液化を図ると良い。
In this case, the spin chuck 22 rotates the wafer W at a relatively low rotation speed (for example, 30 to 50 rpm or less) that does not disturb the shape of the liquid film of the chemical solution.
Due to the rotation of the wafer W, a liquid flow is generated in the liquid film of the chemical solution, and this liquid flow prevents stagnation in the liquid film of the chemical solution and improves the cleaning efficiency. Further, the rotation of the wafer W may be performed intermittently. For example, after rotating the wafer W for a predetermined time or a predetermined number of rotations, the rotation operation of the spin chuck 22 is stopped for a predetermined time, the wafer W is stopped, and then the wafer W is rotated again. When the rotation and the stop of the rotation of the wafer W are repeated in this manner, the chemical liquid can be easily diffused to the entire lower surface of the wafer W. Of course, the cleaning process can be performed while the wafer W is kept stationary without rotating at all. Further, after the liquid film is formed, there is no need to supply a new chemical solution. This is because the entire lower surface of the wafer W can be cleaned with the chemical already supplied between the lower surface moving member 42 and the lower surface of the wafer W as long as the shape of the liquid film of the chemical does not collapse. On the other hand, when the shape of the liquid film of the chemical liquid is about to collapse, a new liquid is supplied and the shape of the liquid film of the chemical liquid is appropriately restored. Thus, the consumption of the chemical solution is saved. The rotation of the wafer W causes the droplets of the liquid film of the chemical solution to be transferred to the lower surface moving member 42.
By continuously supplying the chemical solution through the lower surface supply path 50 while dripping from the periphery of the liquid crystal, it is also possible to always replace the inside of the liquid film of the chemical solution with a brand-new chemical solution and perform a suitable chemical treatment. Also in this case, it is preferable to supply the new solution as quietly as possible to save the chemical solution.
【0040】下面移動部材42内のヒータ61が発熱し
て,下面移動部材42上の薬液の液膜を所定温度に温調
する。このように薬液供給から液膜形成に渡って継続的
に薬液を温調するので,液膜内で薬液反応を促進させて
洗浄効率を向上させることができる。例えばウェハW下
面に付着したパーティクル,有機汚染物,金属不純物の
除去を短時間で行えると共に,これらの除去率を向上さ
せる。
The heater 61 in the lower surface moving member 42 generates heat, and the temperature of the chemical film on the lower surface moving member 42 is adjusted to a predetermined temperature. As described above, since the temperature of the chemical solution is continuously adjusted from the supply of the chemical solution to the formation of the liquid film, the chemical solution reaction is promoted in the liquid film, and the cleaning efficiency can be improved. For example, particles, organic contaminants, and metal impurities attached to the lower surface of the wafer W can be removed in a short time, and the removal rate thereof can be improved.
【0041】一方,上面供給ノズル23が,ウェハWの
上方の所定位置に平行移動する。上面供給ノズル23は
直線状に薬液を供給する。即ち,三方弁67を薬液供給
路68側に切り換えて薬液を上面供給路66に流し,液
溜め部71で温度調整路Sにより薬液を所定温度に温調
して吐出口65から吐出させる。また,ウェハWをスピ
ンチャック22により少なくとも半回転させ,ウェハW
上面に薬液を液盛りして薬液の液膜を均一に形成する。
On the other hand, the upper surface supply nozzle 23 moves in parallel to a predetermined position above the wafer W. The upper surface supply nozzle 23 supplies the chemical solution linearly. That is, the three-way valve 67 is switched to the side of the chemical liquid supply path 68 to flow the chemical liquid to the upper surface supply path 66, and the temperature of the chemical liquid is adjusted to a predetermined temperature by the temperature adjusting path S in the liquid reservoir 71 and is discharged from the discharge port 65. Further, the wafer W is rotated at least half a turn by the spin chuck 22 so that the wafer W
A liquid solution is formed on the upper surface to form a liquid film of the liquid solution uniformly.
【0042】ウェハW上面にも薬液の液膜が形成される
と,図11に示すように,上面移動部材25は,ウェハ
W上面に形成された薬液の液膜に接触しない位置であっ
て,このウェハW上面に対して近接した位置まで移動す
る。例えばウェハW上面に対して近接した位置まで移動
した上面移動部材25とスピンチャック22により支持
されたウェハW上面に形成された薬液の液膜の間には,
隙間L2が形成される。上面移動部材25は,ウェハW
上面の薬液の液膜の形状が崩れそうになった場合等に限
り,新液を供給して薬液の液膜の形状を適宜修復し,ウ
ェハW上面の薬液処理は,上面供給ノズル23から既に
供給された薬液により行い,液膜形成後は新液の供給を
控えて薬液の消費量を節約する。なお,ウェハWを回転
させて薬液の液膜の液滴をウェハW上面の周縁から滴り
落とす一方で,上面移動部材25から薬液を継続的に供
給することにより,ウェハW上面で薬液の液膜内を常に
真新しい薬液に置換して好適な薬液処理を実施しても良
い。
When the liquid film of the chemical solution is also formed on the upper surface of the wafer W, the upper surface moving member 25 is located at a position where it does not contact the liquid film of the chemical solution formed on the upper surface of the wafer W, as shown in FIG. The wafer W moves to a position close to the upper surface of the wafer W. For example, between the upper surface moving member 25 moved to a position close to the upper surface of the wafer W and the liquid film of the chemical formed on the upper surface of the wafer W supported by the spin chuck 22,
A gap L2 is formed. The upper surface moving member 25
Only when the shape of the liquid film of the chemical solution on the upper surface is likely to collapse, a new liquid is supplied to appropriately repair the shape of the liquid film of the chemical solution. After the liquid film is formed, supply of the new liquid is refrained to save the consumption of the chemical liquid. While rotating the wafer W to drop liquid film droplets of the chemical solution from the periphery of the upper surface of the wafer W, while continuously supplying the chemical solution from the upper surface moving member 25, the liquid film of the chemical solution is formed on the upper surface of the wafer W. The inside may always be replaced with a brand new chemical solution, and a suitable chemical treatment may be performed.
【0043】上面移動部材25内のヒータ76が発熱し
て,ウェハW上面に形成された薬液の液膜を所定温度に
調整する。このように薬液の液膜の上方を上面移動部材
25で覆うので液膜から薬液が蒸発して液膜の液量が減
少することを防止できると共に,薬液を温調することに
より所定温度に保って洗浄能力の低下を防止することが
できる。さらに薬液供給から液膜形成に渡って継続的に
薬液を温調するので,ウェハW上面でも,液膜内で薬液
反応を促進させて洗浄効率を向上させることができる。
また上面移動部材25は,隙間L2をおいてウェハW上
面に形成された薬液の液膜に接触することがないので,
この上面移動部材25にパーティクル等が付着している
場合があっても,このパーティクル等によって薬液の液
膜が汚染されることを防止することができる。特にウェ
ハWは例えば半導体デバイス等が形成されるウェハW表
面を上面にしてスピンチャック22に支持されるので,
このように薬液の液膜の清浄度を維持することは重要で
ある。
The heater 76 in the upper surface moving member 25 generates heat, and the liquid film of the chemical formed on the upper surface of the wafer W is adjusted to a predetermined temperature. Since the upper surface moving member 25 covers the upper side of the liquid film of the chemical solution in this manner, it is possible to prevent the chemical solution from evaporating from the liquid film and to reduce the amount of the liquid film, and to maintain the predetermined temperature by controlling the temperature of the chemical solution. As a result, it is possible to prevent a decrease in the cleaning ability. Further, since the temperature of the chemical solution is continuously adjusted from the supply of the chemical solution to the formation of the liquid film, the chemical reaction can be promoted in the liquid film even on the upper surface of the wafer W, and the cleaning efficiency can be improved.
Further, since the upper surface moving member 25 does not contact the liquid film of the chemical formed on the upper surface of the wafer W with the gap L2 therebetween,
Even if particles or the like are attached to the upper surface moving member 25, it is possible to prevent the liquid film of the chemical solution from being contaminated by the particles or the like. In particular, the wafer W is supported by the spin chuck 22 with the surface of the wafer W on which semiconductor devices and the like are formed facing upward, for example.
Thus, it is important to maintain the cleanliness of the liquid film of the chemical solution.
【0044】ウェハW両面の薬液処理が終了すると,図
12に示すように,三方弁51を純水供給路53側に切
り換えて純水を下面供給路50に流し,純水をウェハW
下面に供給する。また,ウェハWを薬液処理するときよ
りも高速(例えば500〜1000rpm程度)に回転
させると共に,処理位置Aに位置した状態に下面移動部
材42を保つ。このように高速回転しているウェハW
に,隙間L1を通して純水を供給することにより,供給
した純水をウェハW下面全体に均一に拡散させることが
できる。さらに下面移動部材42自体も洗浄することが
できる。一方,上面移動部材25は,ウェハW上面から
退避してカップ21外で待機する。また,上面供給ノズ
ル23は,ウェハWの上方の所定位置に再び平行移動す
る。上面供給ノズル23は,ウェハW上面に直線状に純
水を供給する。即ち,三方弁67を純水供給路69側に
切り換えて純水を上面供給路66に流す。高速回転して
いるウェハWに純水を供給することにより,供給した純
水をウェハW上面全体に均一に拡散させることができ
る。こうして,ウェハW両面をリンス処理し,ウェハW
から薬液を洗い流す。
When the chemical treatment on both sides of the wafer W is completed, as shown in FIG. 12, the three-way valve 51 is switched to the pure water supply path 53 side to flow pure water to the lower surface supply path 50, and the pure water is supplied to the wafer W.
Supply to the lower surface. In addition, the wafer W is rotated at a higher speed (for example, about 500 to 1000 rpm) than when the chemical liquid processing is performed, and the lower surface moving member 42 is maintained at the processing position A. The wafer W rotating at such a high speed
By supplying pure water through the gap L1, the supplied pure water can be uniformly diffused over the entire lower surface of the wafer W. Further, the lower surface moving member 42 itself can be cleaned. On the other hand, the upper surface moving member 25 retreats from the upper surface of the wafer W and waits outside the cup 21. Further, the upper surface supply nozzle 23 moves again to a predetermined position above the wafer W in parallel. The upper surface supply nozzle 23 supplies pure water linearly to the upper surface of the wafer W. That is, the three-way valve 67 is switched to the pure water supply path 69 side to flow pure water to the upper surface supply path 66. By supplying pure water to the wafer W rotating at a high speed, the supplied pure water can be uniformly diffused over the entire upper surface of the wafer W. Thus, both sides of the wafer W are rinsed, and the wafer W
Rinse the chemicals from.
【0045】リンス処理後,ウェハWをリンス処理する
ときよりも高速(例えば2000〜3000rpm程
度)に回転させてウェハWをスピン乾燥させる。また,
三方弁51をガス供給路54側に切り換えてNガス
(又は加熱されたホットNガス)を下面供給路50に
流し,NガスをウェハW下面に供給しても良い。この
とき,下面移動部材42の乾燥も同時に行う。図13に
示すように,スピン乾燥の途中で下面移動部材42を退
避位置Bに下降させ,退避位置Bの位置からNガスを
ウェハW下面に供給する。例えば前半の10秒間では処
理位置Aの位置からNガスを供給し,その後に下面移
動部材42は下降して後半の10秒間では退避位置Bの
位置からNガスを供給する。もちろん,下面移動部材
42は,スピン乾燥が終了するまで処理位置Aの位置で
ガスを供給し続けても良い。一方,上面供給ノズル
23は,ウェハW上面にNガスを供給する。即ち,三
方弁67をガス供給路70側に切り換えてNガスを上
面供給路66に流す。こうして,ウェハW両面をリンス
処理し,ウェハWから純水の液滴を除去する。
After the rinsing process, the wafer W is rotated at a higher speed (for example, about 2000 to 3000 rpm) than when the rinsing process is performed on the wafer W, and the wafer W is spin-dried. Also,
The N 2 gas (or heated hot N 2 gas) may be supplied to the lower surface supply channel 50 by switching the three-way valve 51 to the gas supply channel 54 side to supply the N 2 gas to the lower surface of the wafer W. At this time, drying of the lower surface moving member 42 is also performed at the same time. As shown in FIG. 13, the lower surface moving member 42 is lowered to the retreat position B during the spin drying, and the N 2 gas is supplied to the lower surface of the wafer W from the retreat position B. For example, in the first 10 seconds, the N 2 gas is supplied from the position of the processing position A, and then the lower surface moving member 42 descends and supplies the N 2 gas from the position of the retreat position B in the second 10 seconds. Of course, the lower surface moving member 42 may continue to supply the N 2 gas at the processing position A until the spin drying is completed. On the other hand, the upper surface supply nozzle 23 supplies N 2 gas to the upper surface of the wafer W. That is, the three-way valve 67 is switched to the gas supply path 70 side to flow the N 2 gas into the upper supply path 66. In this way, both surfaces of the wafer W are rinsed, and the pure water droplets are removed from the wafer W.
【0046】乾燥処理後,基板処理装置8内からウェハ
Wを搬出する。即ち,図14に示すように,搬送アーム
4は,例えばアーム4bを装置内に進入させてウェハW
下面を支持させる。次いで,図15に示すようにアーム
4bを上昇させてスピンチャック22からウェハWを離
して受け取り,装置内から退出させる。この場合,下面
移動部材42は退避位置Bに位置しているので,搬入す
るときと同様に下面移動部材42とスピンチャック22
により支持されるウェハWの位置(高さ)との間には,
十分な隙間が形成されることになり,搬送アーム4は,
余裕をもってスピンチャック22からウェハWを受け取
ることができる。
After the drying process, the wafer W is carried out from the substrate processing apparatus 8. That is, as shown in FIG. 14, the transfer arm 4 moves the wafer W
Support the lower surface. Then, as shown in FIG. 15, the arm 4b is raised to receive the wafer W apart from the spin chuck 22 and to withdraw the wafer W from the inside of the apparatus. In this case, since the lower surface moving member 42 is located at the retreat position B, the lower surface moving member 42 and the spin chuck 22
Between the position (height) of the wafer W supported by the
A sufficient gap is formed, and the transfer arm 4
The wafer W can be received from the spin chuck 22 with a margin.
【0047】かかる基板処理装置8によれば,ウェハW
を搬入出する際には,下面移動部材42を予め退避位置
Bに下降させているので,搬送装置4は,下面移動部材
42と接触することはなく,ウェハWの搬入出を円滑に
行うことができる。また,上面移動部材25は,ウェハ
W上面に液盛りされた薬液に接触することがないので,
この薬液の汚染を防止して高い洗浄能力を維持させるこ
とができる。更にウェハW両面に液盛りされた薬液をヒ
ータ61,76により所定温度にそれぞれ温調するの
で,洗浄効率を向上させることができる。
According to the substrate processing apparatus 8, the wafer W
When loading and unloading the wafers, since the lower surface moving member 42 has been previously lowered to the retreat position B, the transfer device 4 does not come into contact with the lower surface moving member 42, so that the wafer W can be smoothly loaded and unloaded. Can be. In addition, since the upper surface moving member 25 does not come into contact with the chemical solution that is liquid on the upper surface of the wafer W,
It is possible to prevent contamination of the chemical solution and maintain a high cleaning ability. Further, since the temperature of the chemical liquid on both sides of the wafer W is controlled to a predetermined temperature by the heaters 61 and 76, the cleaning efficiency can be improved.
【0048】基板処理装置8では,ウェハW両面を同時
に洗浄することができるので,例えばウェハWの片面の
みを洗浄するように構成された基板洗浄装置を,ウェハ
W表面専用の装置とウェハW裏面専用の装置とに分けて
設け,ウェハWの表裏面を順次洗浄するような場合に比
べて,洗浄システム1の小型化を図ると共に,スループ
ットを向上させることができる。
In the substrate processing apparatus 8, since both surfaces of the wafer W can be cleaned at the same time, for example, a substrate cleaning device configured to clean only one surface of the wafer W is replaced by a device dedicated to the front surface of the wafer W and a back surface of the wafer W. The cleaning system 1 can be reduced in size and the throughput can be improved as compared with a case where the cleaning system 1 is separately provided and the front and back surfaces of the wafer W are sequentially cleaned.
【0049】以上,本発明の好適な実施の形態の一例を
示したが,本発明はここで説明した形態に限定されな
い。例えば先の本実施形態では,下面移動部材42は処
理位置Aに上昇した後に隙間L1に薬液を供給してウェ
ハW下面を処理していたが,例えば図16に示すよう
に,処理位置Aに上昇する前に(退避位置Bに位置して
いる時点で)下面移動部材42上に薬液を液盛りして液
膜を形成し,液膜形成後に下面移動部材42は処理位置
Aに上昇して,先の図11に示したように薬液をウェハ
W下面に接触させて処理しても良い。この場合も,狭い
隙間L1で薬液を挟むことにより,薬液の液盛りが崩れ
るのを防止しつつウェハW下面全体に薬液を均一に接触
させ,好適な洗浄処理を実施することができる。
Although an example of the preferred embodiment of the present invention has been described above, the present invention is not limited to the embodiment described here. For example, in the previous embodiment, the lower surface moving member 42 processes the lower surface of the wafer W by supplying a chemical solution to the gap L1 after ascending to the processing position A. However, as shown in FIG. Before ascending (at the time of being located at the evacuation position B), a liquid film is formed by pouring a chemical solution on the lower surface moving member 42, and after the liquid film is formed, the lower surface moving member 42 rises to the processing position A. Alternatively, the processing may be performed by bringing the chemical solution into contact with the lower surface of the wafer W as shown in FIG. Also in this case, by sandwiching the chemical solution in the narrow gap L1, the chemical solution can be uniformly brought into contact with the entire lower surface of the wafer W while preventing the collapse of the liquid level, and a suitable cleaning process can be performed.
【0050】例えば図17及び図18に上面供給ノズル
の変形例を示す。図17,18に示す上面供給ノズル8
0の上部には,薬液が供給される薬液供給路81と,純
水及びNガスを供給する純水・ガス供給路82がそれ
ぞれ接続されている。また,上面供給ノズル80内に
は,薬液が一旦貯留される薬液溜め部83と,純水が一
旦貯留される純水溜め部84が設けられている。薬液供
給路81から供給された薬液は,薬液溜め部83に溜め
られた後に,薬液溜め部83に連通した複数の薬液供給
口85によりウェハW上面に供給され,純水・ガス供給
路82から供給された純水は,純水溜め部84に溜めら
れた後に,純水溜め部84に連通した複数の純水供給口
86によりウェハW上面に供給される。また,薬液溜め
部83内と純水溜め部84内には,温度調整路Sがそれ
ぞれ設けられ,薬液と純水を個別に温調できるようにな
っている。
For example, FIGS. 17 and 18 show modifications of the upper surface supply nozzle. Upper surface supply nozzle 8 shown in FIGS.
A chemical liquid supply path 81 for supplying a chemical liquid and a pure water / gas supply path 82 for supplying pure water and N 2 gas are connected to the upper part of the zero. Further, inside the upper surface supply nozzle 80, a chemical solution reservoir 83 for temporarily storing a chemical solution, and a pure water reservoir 84 for temporarily storing pure water are provided. The chemical solution supplied from the chemical solution supply path 81 is stored in the chemical solution storage section 83, and then supplied to the upper surface of the wafer W through a plurality of chemical solution supply ports 85 communicating with the chemical solution storage section 83, and from the pure water / gas supply path 82. The supplied pure water is stored in the pure water reservoir 84 and then supplied to the upper surface of the wafer W through a plurality of pure water supply ports 86 communicating with the pure water reservoir 84. Further, temperature adjustment paths S are provided in the chemical solution reservoir 83 and the pure water reservoir 84, respectively, so that the temperature of the chemical solution and pure water can be controlled individually.
【0051】また上面供給ノズルからは薬液のみを供給
し,ウェハW上面に純水に供給する純水ノズルと,ウェ
ハW上面に乾燥ガスを供給する乾燥ノズルを個別に設け
て,各種処理のときには各々対応するノズルを用いるよ
うにしても良い。さらに薬液を供給するノズルを,複数
の供給口が長手方向に一列に設けられた前記上面供給ノ
ズル23に代えて,供給口が1つしかない一般的な供給
ノズルにしても良い。
Further, a pure water nozzle for supplying only the chemical solution from the upper surface supply nozzle and supplying pure water to the upper surface of the wafer W and a drying nozzle for supplying dry gas to the upper surface of the wafer W are separately provided. The corresponding nozzles may be used. Further, the nozzle for supplying the chemical liquid may be a general supply nozzle having only one supply port, instead of the upper surface supply nozzle 23 in which a plurality of supply ports are provided in a line in the longitudinal direction.
【0052】また上面移動部材により,薬液処理から乾
燥処理を連続して行っても良い。即ち図19に示すよう
に,上面移動部材85の供給路86に,三方弁87を介
して薬液供給路88,純水供給路89,ガス供給路90
が接続され,薬液供給路88には温度調整器91が設け
られている。こうして三方弁87を順次切り換えること
により,ウェハW上面に薬液,純水,Nガスを供給し
て上面移動部材85で各種処理を全て行い,さらにスピ
ン乾燥後には前記ヒータ76の発熱により,ウェハW上
に残存した液滴を乾燥させても良い。
Further, the chemical liquid treatment to the drying treatment may be continuously performed by the upper surface moving member. That is, as shown in FIG. 19, a chemical supply path 88, a pure water supply path 89, and a gas supply path 90 are supplied to a supply path 86 of the upper surface moving member 85 via a three-way valve 87.
Are connected, and a temperature controller 91 is provided in the chemical solution supply path 88. By sequentially switching the three-way valve 87 in this manner, a chemical solution, pure water, and N 2 gas are supplied to the upper surface of the wafer W to perform various processes by the upper surface moving member 85. After spin drying, the wafer 76 is heated by the heat of the heater 76. The droplets remaining on W may be dried.
【0053】図20に,本発明の別の実施の形態にかか
る基板洗浄装置95を示す。この基板洗浄装置95は,
前記スピンチャック22により支持されたウェハWの周
囲を包囲可能な円形筒状の上面移動部材96(カバー
体)を備えている。この上面移動部材96内には,前記
ヒータ76が埋設され,さらに上面移動部材96の上面
には,前記薬液供給路75が接続されている。なお,上
面移動部材96を設けた点を除けば,この基板洗浄装置
95は先に説明した基板洗浄装置8と概ね同一の構成を
有するため,図20において,先に説明した図3と共通
の構成要素については同じ符号を付することにより,重
複説明を省略する。
FIG. 20 shows a substrate cleaning apparatus 95 according to another embodiment of the present invention. This substrate cleaning device 95 includes:
A circular cylindrical upper surface moving member 96 (cover) that can surround the wafer W supported by the spin chuck 22 is provided. The heater 76 is embedded in the upper surface moving member 96, and the chemical solution supply path 75 is connected to the upper surface of the upper surface moving member 96. Except for the point that the upper surface moving member 96 is provided, the substrate cleaning device 95 has substantially the same configuration as the substrate cleaning device 8 described above, and therefore, in FIG. 20, the substrate cleaning device 95 has the same configuration as that of FIG. The same components are denoted by the same reference numerals, and the description thereof will not be repeated.
【0054】この基板洗浄装置95にあっては,洗浄に
際し,上面移動部材96は,ウェハW上面に形成された
薬液の液膜に接触しない位置であって,このウェハW上
面に対して近接した位置まで移動し,ウェハWの周囲ひ
いてはチャック本体40の周囲を覆う。上面移動部材9
6により覆われている状態では薬液の蒸発をより防ぐこ
とができる。またヒータ76が発熱すれば,ヒータ76
の熱は周囲に逃げなくなるので,ウェハW上面に形成さ
れた薬液の液膜を所定温度に短時間で温調することがで
きる。さらにチャック本体40内の雰囲気も周囲に逃げ
なくなるので,カップ21の排気量も減少させることが
でき,例えばランニングコストを抑えることができる。
In the substrate cleaning apparatus 95, the upper surface moving member 96 is located at a position where the upper surface moving member 96 does not come into contact with the liquid film of the chemical solution formed on the upper surface of the wafer W during cleaning. Then, it moves to the position, and covers the periphery of the wafer W and thus the periphery of the chuck body 40. Upper surface moving member 9
In the state covered by 6, the evaporation of the chemical solution can be further prevented. If the heater 76 generates heat, the heater 76
Does not escape to the surroundings, the temperature of the liquid film of the chemical formed on the upper surface of the wafer W can be adjusted to a predetermined temperature in a short time. Further, since the atmosphere in the chuck body 40 cannot escape to the surroundings, the displacement of the cup 21 can be reduced, and for example, the running cost can be suppressed.
【0055】また,本発明は,洗浄液が供給される基板
洗浄装置に限定されず,その他の種々の処理液などを用
いて洗浄以外の他の処理を基板に対して施すものであっ
ても良い。また,基板は半導体ウェハに限らず,その他
のLCD基板用ガラスやCD基板,プリント基板,セラ
ミック基板などであっても良い。
Further, the present invention is not limited to the substrate cleaning apparatus to which the cleaning liquid is supplied, and may perform other processing on the substrate except for cleaning using other various processing liquids. . The substrate is not limited to a semiconductor wafer, but may be another glass for an LCD substrate, a CD substrate, a printed substrate, a ceramic substrate, or the like.
【0056】[0056]
【実施例】次に,本発明の実施例を行った。ウェハWに
洗浄液を液盛りして洗浄するパドル洗浄の除去量(エッ
チング量)について評価する。
EXAMPLE Next, an example of the present invention was performed. The removal amount (etching amount) of the paddle cleaning in which the cleaning liquid is applied to the wafer W for cleaning is evaluated.
【0057】先ず図21に示すように,ウェハW上に膜
厚が10nm±0.3nm程度の熱酸化膜(Th―Ox
ide)を形成し,このようなウェハWを,ヒータ10
0が埋設された載置台101に載置する。そして,熱酸
化膜に対して所定温度(例えば60℃)に加温された洗
浄液,例えばAPM(NHOH/H/HOの
混合液)を液盛りし,室温の状態でウェハWに対してS
C1パドル洗浄を実施する。APM成分の混合容量比,
即ちアンモニア水溶液(NHOH):過酸化水素水
(H):純水(HO)を例えば1:1:5,
1:1:10,1:2:5,1:2:10,1:5:
5,1:5:10,1:5:20,1:5:50と順次
変化させ,熱酸化膜の除去量がどのように変化するか調
べる。膜厚の測定には,エリプソメータ等の光学系の膜
厚測定装置が使用される。処理時間は,5分間(mi
n)とし,測定結果には,ウェハW面内の9個の測定ポ
イントの測定値を平均したものを採用する。この測定結
果をまとめた表を図22に示し,この図22に基づいて
作成したグラフを図23に示す。
First, as shown in FIG. 21, a thermal oxide film (Th-Ox) having a thickness of about 10 nm ± 0.3 nm is formed on the wafer W.
ide), and such a wafer W is supplied to the heater 10.
0 is mounted on the mounting table 101 embedded therein. Then, a cleaning solution heated to a predetermined temperature (for example, 60 ° C.), for example, APM (a mixed solution of NH 4 OH / H 2 O 2 / H 2 O) is applied to the thermal oxide film, and the temperature is kept at room temperature. S for wafer W
Perform C1 paddle cleaning. APM component mixing volume ratio,
That is, an aqueous ammonia solution (NH 4 OH): aqueous hydrogen peroxide (H 2 O 2 ): pure water (H 2 O) is, for example, 1: 1: 5.
1: 1: 10, 1: 2: 5, 1: 2: 10, 1: 5:
5, 1: 5: 10, 1: 5: 20, and 1: 5: 50 are sequentially changed to examine how the removal amount of the thermal oxide film changes. For measuring the film thickness, an optical film thickness measuring device such as an ellipsometer is used. Processing time is 5 minutes (mi
n), and a measurement result obtained by averaging the measurement values at nine measurement points in the wafer W surface is adopted. FIG. 22 shows a table summarizing the measurement results, and FIG. 23 shows a graph created based on this table.
【0058】次いで,図24に示すように,載置台10
1に載置されたウェハWの上方に蓋102を配置し,こ
の蓋102とウェハWに間に形成される隙間L3を,6
0mm,30mm,15mmと順次狭め,熱酸化膜の除
去量がどのように変化するか調べる。また,隙間L3を
60mmとしたときには,APMの液膜の形状が崩れな
い程度に載置台101を回転させてAPMの液膜内を攪
拌させ,その場合の熱酸化膜の除去量も調べる。APM
成分の混合容量比は,1:1:5(アンモニア水溶液:
過酸化水素水:純水)に固定される。なお,APMの所
定温度,膜厚測定装置,処理時間,測定ポイント等の条
件は,先に説明した評価方法と同様である。この測定結
果をまとめた表を図25に示し,この図25に基づいて
作成したグラフを図26に示す。
Next, as shown in FIG.
1. A lid 102 is disposed above the wafer W placed on the wafer 1 and a gap L3 formed between the lid 102 and the wafer W is
The thickness is sequentially reduced to 0 mm, 30 mm, and 15 mm, and how the removal amount of the thermal oxide film changes is examined. When the gap L3 is 60 mm, the mounting table 101 is rotated to such an extent that the shape of the APM liquid film does not collapse, and the inside of the APM liquid film is agitated, and the removal amount of the thermal oxide film in that case is also examined. APM
The mixing volume ratio of the components is 1: 1: 5 (aqueous ammonia solution:
(Hydrogen peroxide solution: pure water). The conditions such as the predetermined temperature of the APM, the film thickness measuring device, the processing time, and the measurement points are the same as those of the evaluation method described above. FIG. 25 shows a table summarizing the measurement results, and FIG. 26 shows a graph created based on this table.
【0059】次いで,ウェハWの上方に蓋を配置すると
共に,前記ヒータ100を発熱させてウェハWを所定温
度(例えば60℃)に温調することにより,熱酸化膜の
除去量がどのように変化するか調べる。この場合,AP
M成分の混合容量比を,1:1:5,1:2:10,
1:5:10,1:5:50と順次変化させる。また,
ウェハWと蓋の距離L3は,5mmに固定され,処理時
間は5分間(min)とする。なお,APMの所定温
度,膜厚測定装置,測定ポイント等の条件は,先に説明
した評価方法と同様である。この測定結果をまとめた表
を図27に示し,この図27に基づいて作成したグラフ
を図28に示す。
Next, a lid is placed above the wafer W, and the heater 100 is heated to adjust the temperature of the wafer W to a predetermined temperature (for example, 60 ° C.). Check if it changes. In this case, the AP
The mixing volume ratio of the M component is 1: 1: 5, 1: 2: 10,
It is sequentially changed to 1: 5: 10 and 1: 5: 50. Also,
The distance L3 between the wafer W and the lid is fixed at 5 mm, and the processing time is 5 minutes (min). The conditions such as the predetermined temperature of the APM, the film thickness measuring device, and the measuring points are the same as in the evaluation method described above. FIG. 27 shows a table summarizing the measurement results, and FIG. 28 shows a graph created based on FIG.
【0060】これらの表及びグラフから理解できるよう
に,単にウェハWを載置台に載置する場合に熱酸化膜の
除去量が最も少なく,蓋と温調を組み合わせた場合に熱
酸化膜の除去量が最も多い。また,図25及び図26に
示すように,ウェハWの上方に蓋を配置する際には,蓋
とウェハWに間に形成される隙間L3が狭い方が,除去
量が向上する。さらにウェハWを回転させて薬液の液膜
を攪拌させた方が,液膜内に液流が生じて除去量が向上
するものと考えられる。
As can be understood from these tables and graphs, when the wafer W is simply placed on the mounting table, the removal amount of the thermal oxide film is the smallest, and when the lid and the temperature control are combined, the thermal oxide film is removed. Most amount. Further, as shown in FIGS. 25 and 26, when the lid is arranged above the wafer W, the smaller the gap L3 formed between the lid and the wafer W, the higher the removal amount. Further, it is considered that, when the wafer W is rotated and the liquid film of the chemical liquid is stirred, a liquid flow is generated in the liquid film and the removal amount is improved.
【0061】[0061]
【発明の効果】本発明によれば,基板を搬入出する際に
は,下面移動部材を予め退避位置に下降させているの
で,例えば基板を搬入出する搬送装置は,下面移動部材
と接触することはなく,基板の搬入出を円滑に行うこと
ができる。また,上面移動部材は,基板上面に液盛りさ
れた洗浄液に接触することがないので,この洗浄液の汚
染を防止して高い洗浄能力を維持させることができる。
更に基板両面に液盛りされた薬液を,上面温度調整機
構,下面温度調整機構により所定温度にそれぞれ温調す
るので,洗浄液の蒸発を防いで洗浄効率を向上させるこ
とができる。
According to the present invention, when loading and unloading a substrate, the lower surface moving member is previously lowered to the retracted position, so that, for example, the transfer device for loading and unloading the substrate comes into contact with the lower surface moving member. Therefore, the substrate can be smoothly loaded and unloaded. In addition, since the upper surface moving member does not come into contact with the cleaning liquid laid on the upper surface of the substrate, the cleaning liquid can be prevented from being contaminated, and high cleaning performance can be maintained.
Further, the temperature of the chemical liquid on both sides of the substrate is adjusted to a predetermined temperature by the upper surface temperature adjusting mechanism and the lower surface temperature adjusting mechanism, thereby preventing the cleaning liquid from evaporating and improving the cleaning efficiency.
【図面の簡単な説明】[Brief description of the drawings]
【図1】本実施の形態にかかる基板洗浄装置を備えた洗
浄システムの斜視図である。
FIG. 1 is a perspective view of a cleaning system including a substrate cleaning apparatus according to an embodiment.
【図2】本実施の形態にかかる基板洗浄装置の平面図で
ある。
FIG. 2 is a plan view of the substrate cleaning apparatus according to the embodiment.
【図3】本実施の形態にかかる基板洗浄装置の縦断面図
である。
FIG. 3 is a longitudinal sectional view of the substrate cleaning apparatus according to the present embodiment.
【図4】スピンチャックを拡大して示した縦断面図であ
る。
FIG. 4 is an enlarged longitudinal sectional view showing a spin chuck.
【図5】上面供給ノズルの斜視図である。FIG. 5 is a perspective view of an upper surface supply nozzle.
【図6】上面供給ノズルの縦断面図である。FIG. 6 is a vertical sectional view of an upper surface supply nozzle.
【図7】上面供給ノズルからウェハに洗浄液が供給され
る様子を示す斜視図である。
FIG. 7 is a perspective view illustrating a state in which a cleaning liquid is supplied to a wafer from an upper surface supply nozzle.
【図8】ウェハを基板洗浄装置に搬入する工程の説明図
である。
FIG. 8 is an explanatory diagram of a step of carrying a wafer into a substrate cleaning apparatus.
【図9】ウェハをスピンチャックに渡す工程の説明図で
ある。
FIG. 9 is an explanatory diagram of a process of transferring a wafer to a spin chuck.
【図10】下面移動部材とウェハ下面の間に薬液を液盛
りし,ウェハ上面に薬液を液盛りする工程の説明図であ
る。
FIG. 10 is an explanatory view of a step of filling a chemical solution between the lower surface moving member and the lower surface of the wafer and filling a chemical solution on the upper surface of the wafer.
【図11】ウェハ両面をパドル洗浄する工程の説明図で
ある。
FIG. 11 is an explanatory diagram of a step of paddle cleaning both surfaces of the wafer.
【図12】ウェハ両面をリンス処理する工程の説明図で
ある。
FIG. 12 is an explanatory diagram of a step of performing a rinsing process on both surfaces of the wafer.
【図13】ウェハ両面を乾燥処理する工程の説明図であ
る。
FIG. 13 is an explanatory diagram of a process of drying both surfaces of the wafer.
【図14】ウェハをスピンチャックから受け取る工程の
説明図である。
FIG. 14 is an explanatory diagram of a step of receiving a wafer from a spin chuck.
【図15】ウェハを基板洗浄装置から搬出する工程の説
明図である。
FIG. 15 is an explanatory diagram of a step of carrying out the wafer from the substrate cleaning apparatus.
【図16】処理位置に上昇する前に下面移動部材上に薬
液を液盛りする工程の説明図である。
FIG. 16 is an explanatory diagram of a step of filling a chemical solution on a lower surface moving member before ascending to a processing position.
【図17】上面供給ノズルの変形例を示す斜視図であ
る。
FIG. 17 is a perspective view showing a modification of the upper surface supply nozzle.
【図18】図17の上面供給ノズルの縦断面図である。18 is a vertical sectional view of the upper surface supply nozzle of FIG.
【図19】上面移動部材の変形例を示す縦断面図であ
る。
FIG. 19 is a longitudinal sectional view showing a modification of the upper surface moving member.
【図20】別の実施の形態にかかる基板洗浄装置の縦断
面図である。
FIG. 20 is a longitudinal sectional view of a substrate cleaning apparatus according to another embodiment.
【図21】本実施例の構成を示す説明図である。FIG. 21 is an explanatory diagram showing a configuration of the present example.
【図22】本実施例において,熱酸化膜をSC1パドル
洗浄した場合のAPM成分の混合容量比と熱酸化膜の除
去量の関係を示す表である。
FIG. 22 is a table showing the relationship between the mixed volume ratio of APM components and the removal amount of the thermal oxide film when the thermal oxide film is subjected to SC1 paddle cleaning in this example.
【図23】図22に基づいて作成されたグラフである。FIG. 23 is a graph created based on FIG. 22;
【図24】本実施例の構成において,ウェハの上方に蓋
を配置した場合の説明図である。
FIG. 24 is an explanatory diagram in the case of disposing a lid above a wafer in the configuration of the present embodiment.
【図25】本実施例において,ウェハの上方に蓋を配置
してSC1パドル洗浄した場合の,蓋とウェハに間に形
成される隙間と熱酸化膜の除去量の関係を示す表であ
る。
FIG. 25 is a table showing the relationship between the gap formed between the lid and the wafer and the removal amount of the thermal oxide film when the lid is disposed above the wafer and SC1 paddle cleaning is performed in the present embodiment.
【図26】図25に基づいて作成されたグラフである。FIG. 26 is a graph created based on FIG. 25.
【図27】本実施例において,温調をしながらウェハの
上方に蓋を配置してSC1パドル洗浄した場合の,AP
M成分の混合容量比と熱酸化膜の除去量の関係を示す表
である。
FIG. 27 is a diagram showing an example of an AP in a case where a lid is arranged above a wafer while performing temperature control and SC1 paddle cleaning is performed in the present embodiment.
4 is a table showing the relationship between the mixing capacity ratio of the M component and the removal amount of the thermal oxide film.
【図28】図27に基づいて作成されたグラフである。FIG. 28 is a graph created based on FIG. 27;
【符号の説明】[Explanation of symbols]
A 処理位置 B 退避位置 C キャリア W ウェハ 1 洗浄システム 8,9,10,11 基板洗浄装置 22 スピンチャック 23 上面供給ノズル 25 上面移動部材 42 下面移動部材 50 下面供給路 61,72 ヒータ A Processing position B Evacuation position C Carrier W Wafer 1 Cleaning system 8, 9, 10, 11 Substrate cleaning device 22 Spin chuck 23 Upper surface supply nozzle 25 Upper surface moving member 42 Lower surface moving member 50 Lower surface supply path 61, 72 Heater
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.7 識別記号 FI テーマコート゛(参考) H01L 21/304 651 H01L 21/304 651L Fターム(参考) 2H088 FA21 FA30 HA01 2H090 JB02 JC19 3B201 AA03 AB03 BA12 BB21 BB43 BB82 BB93 BB94 BB98 CB15 CC01 CD11 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 7 Identification code FI Theme coat ゛ (Reference) H01L 21/304 651 H01L 21/304 651L F term (Reference) 2H088 FA21 FA30 HA01 2H090 JB02 JC19 3B201 AA03 AB03 BA12 BB21 BB43 BB82 BB93 BB94 BB98 CB15 CC01 CD11

Claims (15)

    【特許請求の範囲】[Claims]
  1. 【請求項1】 処理液を供給して基板を処理する装置で
    あって,基板を支持する支持手段と,前記支持手段によ
    り支持された基板下面に近接した処理位置と前記支持手
    段により支持された基板下面から離れた退避位置との間
    で相対的に移動する下面移動部材とを備え,前記処理位
    置に移動した下面移動部材と前記支持手段により支持さ
    れた基板下面の間に処理液が供給されて基板下面が処理
    されることを特徴とする,基板処理装置。
    1. An apparatus for processing a substrate by supplying a processing liquid, comprising: a support means for supporting the substrate; a processing position close to a lower surface of the substrate supported by the support means; and an apparatus supported by the support means. A lower surface moving member that relatively moves between a retreat position separated from the substrate lower surface, and a processing liquid is supplied between the lower surface moving member that has moved to the processing position and the substrate lower surface supported by the support means. A substrate processing apparatus characterized in that a lower surface of a substrate is processed by a process.
  2. 【請求項2】 前記支持手段は,回転自在に構成されて
    いることを特徴とする,請求項1に記載の基板処理装
    置。
    2. The substrate processing apparatus according to claim 1, wherein said support means is rotatable.
  3. 【請求項3】 前記下面移動部材に,処理液を所定温度
    にさせる下面温度調整機構が設けられていることを特徴
    とする,請求項1又は2に記載の基板処理装置。
    3. The substrate processing apparatus according to claim 1, wherein the lower surface moving member is provided with a lower surface temperature adjusting mechanism for bringing the processing liquid to a predetermined temperature.
  4. 【請求項4】 前記支持手段により支持された基板上面
    にも処理液が供給されて基板上面が処理されることを特
    徴とする,請求項1,2又は3のいずれかに記載の基板
    処理装置。
    4. The substrate processing apparatus according to claim 1, wherein the processing liquid is supplied also to the upper surface of the substrate supported by the support means, and the upper surface of the substrate is processed. .
  5. 【請求項5】 前記支持手段により支持された基板上面
    に対して相対的に近接自在な上面移動部材を備えること
    を特徴とする,請求項1,2,3又は4のいずれかに記
    載の基板処理装置。
    5. The substrate according to claim 1, further comprising an upper surface moving member which is relatively close to the upper surface of the substrate supported by the supporting means. Processing equipment.
  6. 【請求項6】 基板上面に供給される処理液を所定温度
    にさせる液温度調整機構を備えることを特徴とする,請
    求項4に記載の基板処理装置。
    6. The substrate processing apparatus according to claim 4, further comprising a liquid temperature adjusting mechanism for adjusting a processing liquid supplied to the upper surface of the substrate to a predetermined temperature.
  7. 【請求項7】 前記上面移動部材に,基板上面に供給さ
    れた処理液を所定温度にさせる上面温度調整機構が設け
    られていることを特徴とする,請求項5に記載の基板処
    理装置。
    7. The substrate processing apparatus according to claim 5, wherein the upper surface moving member is provided with an upper surface temperature adjusting mechanism for adjusting a processing liquid supplied to the upper surface of the substrate to a predetermined temperature.
  8. 【請求項8】 支持手段により支持された基板に対して
    処理液を供給して基板を処理する方法であって,前記支
    持手段により支持された基板下面から離れた退避位置に
    下面移動部材を相対的に移動させる工程と,前記支持手
    段に基板を渡して支持させる工程と,前記支持手段によ
    り支持された基板下面に近接した処理位置に前記下面移
    動手段を相対的に移動させ,前記支持手段により支持さ
    れた基板下面に処理液を接触させて処理する工程と,前
    記基板をリンス処理する工程と,前記基板を乾燥処理す
    る工程と,前記退避位置に,前記下面移動部材を相対的
    に移動させる工程と,前記支持手段から基板を搬出する
    工程を有することを特徴とする,基板処理方法。
    8. A method of processing a substrate by supplying a processing liquid to a substrate supported by a supporting means, wherein the lower surface moving member is moved to a retracted position away from the lower surface of the substrate supported by the supporting means. Moving the lower surface moving means relative to a processing position close to the lower surface of the substrate supported by the supporting means; A step of bringing a processing solution into contact with the lower surface of the supported substrate, a step of rinsing the substrate, a step of drying the substrate, and relatively moving the lower surface moving member to the retracted position. And a step of carrying out the substrate from the supporting means.
  9. 【請求項9】 前記基板下面に処理液を接触させて処理
    するに際し,前記処理位置に移動した下面移動部材と前
    記支持手段により支持された基板下面の間に処理液を液
    盛りさせた状態で処理することを特徴とする,請求項8
    に記載の基板処理方法。
    9. When processing is performed by bringing a processing liquid into contact with the lower surface of the substrate, the processing liquid is filled between the lower surface moving member moved to the processing position and the lower surface of the substrate supported by the support means. 9. The processing according to claim 8, wherein the processing is performed.
    4. The substrate processing method according to 1.
  10. 【請求項10】 前記基板下面に処理液を接触させて処
    理するに際し,前記下面移動部材に対して相対的に基板
    を回転させることを特徴とする,請求項8又は9に記載
    の基板処理方法。
    10. The substrate processing method according to claim 8, wherein a substrate is rotated relative to the lower surface moving member when processing is performed by bringing a processing liquid into contact with the lower surface of the substrate. .
  11. 【請求項11】 前記基板下面に処理液を接触させて処
    理するに際し,処理液を所定温度にさせることを特徴と
    する,請求項8,9又は10のいずれかに記載の基板処
    理方法。
    11. The substrate processing method according to claim 8, wherein the processing liquid is heated to a predetermined temperature when the processing liquid is brought into contact with the lower surface of the substrate.
  12. 【請求項12】 基板上面に処理液を供給して処理する
    工程を有することを特徴とする,請求項8,9,10又
    は11のいずれかに記載の基板処理方法。
    12. The substrate processing method according to claim 8, further comprising a step of supplying a processing liquid to an upper surface of the substrate to perform processing.
  13. 【請求項13】 基板上面に処理液を液盛りさせた状態
    で処理することを特徴とする,請求項12に記載の基板
    処理方法。
    13. The substrate processing method according to claim 12, wherein the processing is performed in a state where the processing liquid is filled on the upper surface of the substrate.
  14. 【請求項14】 前記基板上面に処理液を供給して処理
    するに際し,前記支持手段により支持された前記基板上
    面に対して上面移動部材を相対的に移動させることを特
    徴とする,請求項12又は13に記載の基板処理方法。
    14. The apparatus according to claim 12, wherein an upper surface moving member is relatively moved with respect to the upper surface of the substrate supported by the supporting means when supplying the processing liquid to the upper surface of the substrate for processing. Or the substrate processing method according to 13.
  15. 【請求項15】 前記上面移動部材は,基板上面に供給
    された処理液に接触しないことを特徴とする,請求項1
    4に記載の基板処理方法。
    15. The apparatus according to claim 1, wherein the upper surface moving member does not contact the processing liquid supplied to the upper surface of the substrate.
    5. The substrate processing method according to 4.
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JP2009021448A (en) * 2007-07-12 2009-01-29 Shin Etsu Chem Co Ltd Cleaning method
US7914626B2 (en) 2005-11-24 2011-03-29 Tokyo Electron Limited Liquid processing method and liquid processing apparatus
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