TW486482B - The compound for the aluminum film from chemical vapor deposition and the method of synthesis - Google Patents

The compound for the aluminum film from chemical vapor deposition and the method of synthesis Download PDF

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Publication number
TW486482B
TW486482B TW088114186A TW88114186A TW486482B TW 486482 B TW486482 B TW 486482B TW 088114186 A TW088114186 A TW 088114186A TW 88114186 A TW88114186 A TW 88114186A TW 486482 B TW486482 B TW 486482B
Authority
TW
Taiwan
Prior art keywords
formula
aluminum
compound
alkyl
alkyl group
Prior art date
Application number
TW088114186A
Other languages
English (en)
Chinese (zh)
Inventor
Hyun-Koock Shin
Original Assignee
Rohm & Haas
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm & Haas filed Critical Rohm & Haas
Application granted granted Critical
Publication of TW486482B publication Critical patent/TW486482B/zh

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
    • C23C16/20—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/061—Aluminium compounds with C-aluminium linkage
    • C07F5/065—Aluminium compounds with C-aluminium linkage compounds with an Al-H linkage
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
    • C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
    • C07F5/06—Aluminium compounds
    • C07F5/061—Aluminium compounds with C-aluminium linkage
    • C07F5/066—Aluminium compounds with C-aluminium linkage compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage)

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
TW088114186A 1998-09-15 1999-08-19 The compound for the aluminum film from chemical vapor deposition and the method of synthesis TW486482B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR19980038572A KR100289945B1 (ko) 1998-09-15 1998-09-15 알루미늄박막의화학증착용전구체화합물및이의제조방법

Publications (1)

Publication Number Publication Date
TW486482B true TW486482B (en) 2002-05-11

Family

ID=19551035

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088114186A TW486482B (en) 1998-09-15 1999-08-19 The compound for the aluminum film from chemical vapor deposition and the method of synthesis

Country Status (7)

Country Link
US (2) US6121443A (https=)
EP (1) EP0987270B1 (https=)
JP (1) JP2000086673A (https=)
KR (1) KR100289945B1 (https=)
DE (1) DE69904129T2 (https=)
SG (1) SG79280A1 (https=)
TW (1) TW486482B (https=)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI459508B (zh) * 2009-06-03 2014-11-01 諾菲勒斯系統公司 用於互連的界面覆蓋層
US9633896B1 (en) 2015-10-09 2017-04-25 Lam Research Corporation Methods for formation of low-k aluminum-containing etch stop films
TWI800579B (zh) * 2017-12-20 2023-05-01 德商巴斯夫歐洲公司 用於產生含金屬薄膜的方法

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100316760B1 (ko) * 1999-06-11 2001-12-12 신현국 알루미나 박막의 화학 증착용 전구체 화합물 및 이의 제조방법
US7098339B2 (en) * 2005-01-18 2006-08-29 Praxair Technology, Inc. Processes for the production of organometallic compounds
JP4711113B2 (ja) * 2005-03-14 2011-06-29 株式会社トリケミカル研究所 ＣＨ３ＡｌＨ２：Ｌの製造方法、Ａｌ系膜形成材料、Ａｌ系膜形成方法、及びＡｌ系配線膜形成方法
KR100696858B1 (ko) 2005-09-21 2007-03-20 삼성전자주식회사 유기 알루미늄 전구체 및 이를 이용한 금속배선 형성방법
KR100689668B1 (ko) 2005-09-26 2007-03-08 삼성전자주식회사 유기 알루미늄 전구체 및 이를 이용한 알루미늄 배선형성방법
KR100724084B1 (ko) * 2005-11-16 2007-06-04 주식회사 유피케미칼 디알킬아미도디하이드로알루미늄 화합물을 이용한 박막증착방법
KR100829472B1 (ko) * 2006-05-18 2008-05-16 (주)디엔에프 알루미늄 박막의 화학증착용 전구체 화합물 및 이의제조방법
KR100756403B1 (ko) * 2006-05-18 2007-09-10 (주)디엔에프 알루미늄 박막의 화학증착용 전구체 화합물의 제조방법
US8597424B2 (en) * 2007-12-26 2013-12-03 Jsr Corporation Composition and method for forming an aluminum film
US20110206844A1 (en) 2010-02-24 2011-08-25 Jacob Grant Wiles Chromium-free passivation of vapor deposited aluminum surfaces
TWI839372B (zh) * 2018-07-30 2024-04-21 南韓商Ｕｐ化學有限公司 鋁化合物和使用其形成含鋁膜的方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB905985A (en) 1959-02-24 1962-09-19 Ethyl Corp Preparing metal-alumino hydrides
JPS57188026A (en) 1981-05-14 1982-11-18 Minolta Camera Co Ltd Driving device for photographing lens of automatic focusing camera
US4923717A (en) * 1989-03-17 1990-05-08 Regents Of The University Of Minnesota Process for the chemical vapor deposition of aluminum
JP2721023B2 (ja) * 1989-09-26 1998-03-04 キヤノン株式会社 堆積膜形成法
US5113025A (en) 1989-10-02 1992-05-12 Ethyl Corporation Selective reducing agents
US5178911A (en) * 1989-11-30 1993-01-12 The President And Fellows Of Harvard College Process for chemical vapor deposition of main group metal nitrides
DE69120446T2 (de) * 1990-02-19 1996-11-14 Canon Kk Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid
US5130459A (en) * 1990-06-08 1992-07-14 Nec Corporation Selective chemical vapor deposition of aluminum, aluminum CVD materials and process for preparing the same
US5136046A (en) 1990-09-28 1992-08-04 Ethyl Corporation Preparation of amine alanes
US5191099A (en) * 1991-09-05 1993-03-02 Regents Of The University Of Minnesota Chemical vapor deposition of aluminum films using dimethylethylamine alane
JPH0912581A (ja) * 1995-04-28 1997-01-14 Sumitomo Chem Co Ltd ジメチルアルミニウムハイドライド組成物及びその製造方法ならびにジメチルアルミニウムハイドライドの粘度調製方法
US5900279A (en) 1995-11-20 1999-05-04 Tri Chemical Laboratory Inc. Processes for the chemical vapor deposition and solvent used for the processes
JP2913583B2 (ja) * 1996-09-24 1999-06-28 株式会社トリケミカル研究所 Ａｌ膜形成材料及びＡｌ膜形成方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI459508B (zh) * 2009-06-03 2014-11-01 諾菲勒斯系統公司 用於互連的界面覆蓋層
US9633896B1 (en) 2015-10-09 2017-04-25 Lam Research Corporation Methods for formation of low-k aluminum-containing etch stop films
TWI800579B (zh) * 2017-12-20 2023-05-01 德商巴斯夫歐洲公司 用於產生含金屬薄膜的方法

Also Published As

Publication number Publication date
SG79280A1 (en) 2001-03-20
DE69904129T2 (de) 2003-05-08
DE69904129D1 (de) 2003-01-09
JP2000086673A (ja) 2000-03-28
EP0987270A3 (en) 2001-06-06
KR20000020137A (ko) 2000-04-15
KR100289945B1 (ko) 2001-09-17
EP0987270B1 (en) 2002-11-27
EP0987270A2 (en) 2000-03-22
US6380383B1 (en) 2002-04-30
US6121443A (en) 2000-09-19

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