JPWO2011083820A1 - 金属アルコキシド化合物及び当該化合物を用いた金属含有薄膜の製造法 - Google Patents
金属アルコキシド化合物及び当該化合物を用いた金属含有薄膜の製造法 Download PDFInfo
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- JPWO2011083820A1 JPWO2011083820A1 JP2011549020A JP2011549020A JPWO2011083820A1 JP WO2011083820 A1 JPWO2011083820 A1 JP WO2011083820A1 JP 2011549020 A JP2011549020 A JP 2011549020A JP 2011549020 A JP2011549020 A JP 2011549020A JP WO2011083820 A1 JPWO2011083820 A1 JP WO2011083820A1
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- Prior art keywords
- metal
- zirconium
- alkoxide compound
- compound
- metal alkoxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 86
- 239000002184 metal Substances 0.000 title claims abstract description 86
- 239000010409 thin film Substances 0.000 title claims abstract description 37
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 25
- -1 alkoxide compound Chemical class 0.000 title claims description 70
- 150000001875 compounds Chemical class 0.000 title abstract description 20
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 35
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 25
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical group [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims abstract description 15
- 239000010936 titanium Chemical group 0.000 claims abstract description 14
- 229910052719 titanium Chemical group 0.000 claims abstract description 13
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 12
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical group [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 9
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical group [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims abstract description 8
- 125000004432 carbon atom Chemical group C* 0.000 claims abstract description 6
- 125000000217 alkyl group Chemical group 0.000 claims abstract description 4
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- 239000002904 solvent Substances 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 5
- 239000011261 inert gas Substances 0.000 claims description 5
- 239000001301 oxygen Substances 0.000 claims description 5
- 229910052760 oxygen Inorganic materials 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 4
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims description 3
- 150000004945 aromatic hydrocarbons Chemical class 0.000 claims description 3
- 150000002170 ethers Chemical class 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 description 28
- 238000000034 method Methods 0.000 description 26
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- 238000006243 chemical reaction Methods 0.000 description 25
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- 239000007788 liquid Substances 0.000 description 18
- 150000003755 zirconium compounds Chemical class 0.000 description 18
- 238000000231 atomic layer deposition Methods 0.000 description 16
- XQHYKWIBWHTMDR-UHFFFAOYSA-N CC(C)C(C(C)C)O[Zr](OC(C(C)C)C(C)C)(OC(C(C)C)C(C)C)OC(C(C)C)C(C)C Chemical compound CC(C)C(C(C)C)O[Zr](OC(C(C)C)C(C)C)(OC(C(C)C)C(C)C)OC(C(C)C)C(C)C XQHYKWIBWHTMDR-UHFFFAOYSA-N 0.000 description 15
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- 239000007789 gas Substances 0.000 description 12
- 238000010438 heat treatment Methods 0.000 description 12
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- BAYAKMPRFGNNFW-UHFFFAOYSA-N 2,4-dimethylpentan-3-ol Chemical compound CC(C)C(O)C(C)C BAYAKMPRFGNNFW-UHFFFAOYSA-N 0.000 description 11
- 238000000151 deposition Methods 0.000 description 11
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- UAEPNZWRGJTJPN-UHFFFAOYSA-N methylcyclohexane Chemical compound CC1CCCCC1 UAEPNZWRGJTJPN-UHFFFAOYSA-N 0.000 description 8
- DUNKXUFBGCUVQW-UHFFFAOYSA-J zirconium tetrachloride Chemical compound Cl[Zr](Cl)(Cl)Cl DUNKXUFBGCUVQW-UHFFFAOYSA-J 0.000 description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 6
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- WGYOOFMUKPWKON-UHFFFAOYSA-N CC(C)C(C(C)C)O[Hf](OC(C(C)C)C(C)C)(OC(C(C)C)C(C)C)OC(C(C)C)C(C)C Chemical compound CC(C)C(C(C)C)O[Hf](OC(C(C)C)C(C)C)(OC(C(C)C)C(C)C)OC(C(C)C)C(C)C WGYOOFMUKPWKON-UHFFFAOYSA-N 0.000 description 5
- RSOIFZVYRBMAEA-UHFFFAOYSA-N CC(C)C(C(C)C)O[Ti](OC(C(C)C)C(C)C)(OC(C(C)C)C(C)C)OC(C(C)C)C(C)C Chemical compound CC(C)C(C(C)C)O[Ti](OC(C(C)C)C(C)C)(OC(C(C)C)C(C)C)OC(C(C)C)C(C)C RSOIFZVYRBMAEA-UHFFFAOYSA-N 0.000 description 5
- 238000000921 elemental analysis Methods 0.000 description 5
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- 230000008016 vaporization Effects 0.000 description 5
- 239000006200 vaporizer Substances 0.000 description 5
- BGGIUGXMWNKMCP-UHFFFAOYSA-N 2-methylpropan-2-olate;zirconium(4+) Chemical compound CC(C)(C)O[Zr](OC(C)(C)C)(OC(C)(C)C)OC(C)(C)C BGGIUGXMWNKMCP-UHFFFAOYSA-N 0.000 description 4
- 239000012298 atmosphere Substances 0.000 description 4
- 238000004821 distillation Methods 0.000 description 4
- GYNNXHKOJHMOHS-UHFFFAOYSA-N methyl-cycloheptane Natural products CC1CCCCCC1 GYNNXHKOJHMOHS-UHFFFAOYSA-N 0.000 description 4
- 239000007787 solid Substances 0.000 description 4
- KQWGKQNSYGNBSJ-UHFFFAOYSA-N CC(C)C(CC)O[Zr](OC(C(C)C)CC)(OC(C(C)C)CC)OC(C(C)C)CC Chemical compound CC(C)C(CC)O[Zr](OC(C(C)C)CC)(OC(C(C)C)CC)OC(C(C)C)CC KQWGKQNSYGNBSJ-UHFFFAOYSA-N 0.000 description 3
- QJWSESNDRVMRRN-UHFFFAOYSA-N CC(C)C(CCC)O[Zr](OC(C(C)C)CCC)(OC(C(C)C)CCC)OC(C(C)C)CCC Chemical compound CC(C)C(CCC)O[Zr](OC(C(C)C)CCC)(OC(C(C)C)CCC)OC(C(C)C)CCC QJWSESNDRVMRRN-UHFFFAOYSA-N 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 3
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 3
- 239000001307 helium Substances 0.000 description 3
- 229910052734 helium Inorganic materials 0.000 description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 125000004123 n-propyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])* 0.000 description 3
- NIJDLRJGRCHJDB-UHFFFAOYSA-N propan-2-ol;propan-2-olate;zirconium(4+) Chemical compound [Zr+4].CC(C)O.CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] NIJDLRJGRCHJDB-UHFFFAOYSA-N 0.000 description 3
- YBRBMKDOPFTVDT-UHFFFAOYSA-N tert-butylamine Chemical compound CC(C)(C)N YBRBMKDOPFTVDT-UHFFFAOYSA-N 0.000 description 3
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 150000004703 alkoxides Chemical class 0.000 description 2
- 125000003545 alkoxy group Chemical group 0.000 description 2
- 239000003990 capacitor Substances 0.000 description 2
- HPNMFZURTQLUMO-UHFFFAOYSA-N diethylamine Chemical compound CCNCC HPNMFZURTQLUMO-UHFFFAOYSA-N 0.000 description 2
- 229910001873 dinitrogen Inorganic materials 0.000 description 2
- IIEWJVIFRVWJOD-UHFFFAOYSA-N ethylcyclohexane Chemical compound CCC1CCCCC1 IIEWJVIFRVWJOD-UHFFFAOYSA-N 0.000 description 2
- 238000002474 experimental method Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- NFHFRUOZVGFOOS-UHFFFAOYSA-N palladium;triphenylphosphane Chemical compound [Pd].C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1.C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 NFHFRUOZVGFOOS-UHFFFAOYSA-N 0.000 description 2
- 150000003609 titanium compounds Chemical class 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- 238000009834 vaporization Methods 0.000 description 2
- OERNJTNJEZOPIA-UHFFFAOYSA-N zirconium nitrate Chemical compound [Zr+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O OERNJTNJEZOPIA-UHFFFAOYSA-N 0.000 description 2
- DURPTKYDGMDSBL-UHFFFAOYSA-N 1-butoxybutane Chemical compound CCCCOCCCC DURPTKYDGMDSBL-UHFFFAOYSA-N 0.000 description 1
- DUJKCHHMRIHGIW-UHFFFAOYSA-N 1-methoxy-2-methylpropan-2-olate zirconium(4+) Chemical compound COCC(C)(C)O[Zr](OC(C)(C)COC)(OC(C)(C)COC)OC(C)(C)COC DUJKCHHMRIHGIW-UHFFFAOYSA-N 0.000 description 1
- ISTJMQSHILQAEC-UHFFFAOYSA-N 2-methyl-3-pentanol Chemical compound CCC(O)C(C)C ISTJMQSHILQAEC-UHFFFAOYSA-N 0.000 description 1
- RGRUUTLDBCWYBL-UHFFFAOYSA-N 2-methylhexan-3-ol Chemical compound CCCC(O)C(C)C RGRUUTLDBCWYBL-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- OPFJDXRVMFKJJO-ZHHKINOHSA-N N-{[3-(2-benzamido-4-methyl-1,3-thiazol-5-yl)-pyrazol-5-yl]carbonyl}-G-dR-G-dD-dD-dD-NH2 Chemical compound S1C(C=2NN=C(C=2)C(=O)NCC(=O)N[C@H](CCCN=C(N)N)C(=O)NCC(=O)N[C@H](CC(O)=O)C(=O)N[C@H](CC(O)=O)C(=O)N[C@H](CC(O)=O)C(N)=O)=C(C)N=C1NC(=O)C1=CC=CC=C1 OPFJDXRVMFKJJO-ZHHKINOHSA-N 0.000 description 1
- QJWWEAMHTHINQX-UHFFFAOYSA-N [Zr+4].CN(C)C([O-])C.CN(C)C([O-])C.CN(C)C([O-])C.CN(C)C([O-])C Chemical compound [Zr+4].CN(C)C([O-])C.CN(C)C([O-])C.CN(C)C([O-])C.CN(C)C([O-])C QJWWEAMHTHINQX-UHFFFAOYSA-N 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 239000003708 ampul Substances 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 229940125810 compound 20 Drugs 0.000 description 1
- 229940126086 compound 21 Drugs 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000012776 electronic material Substances 0.000 description 1
- SRLSISLWUNZOOB-UHFFFAOYSA-N ethyl(methyl)azanide;zirconium(4+) Chemical compound [Zr+4].CC[N-]C.CC[N-]C.CC[N-]C.CC[N-]C SRLSISLWUNZOOB-UHFFFAOYSA-N 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- JAXFJECJQZDFJS-XHEPKHHKSA-N gtpl8555 Chemical compound OC(=O)C[C@H](N)C(=O)N[C@@H](CCC(O)=O)C(=O)N[C@@H](C(C)C)C(=O)N[C@@H](C(C)C)C(=O)N1CCC[C@@H]1C(=O)N[C@H](B1O[C@@]2(C)[C@H]3C[C@H](C3(C)C)C[C@H]2O1)CCC1=CC=C(F)C=C1 JAXFJECJQZDFJS-XHEPKHHKSA-N 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- HRDRRWUDXWRQTB-UHFFFAOYSA-N hafnium(4+);propan-2-olate Chemical compound [Hf+4].CC(C)[O-].CC(C)[O-].CC(C)[O-].CC(C)[O-] HRDRRWUDXWRQTB-UHFFFAOYSA-N 0.000 description 1
- 125000004051 hexyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 125000000959 isobutyl group Chemical group [H]C([H])([H])C([H])(C([H])([H])[H])C([H])([H])* 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- JJWLVOIRVHMVIS-UHFFFAOYSA-N isopropylamine Chemical compound CC(C)N JJWLVOIRVHMVIS-UHFFFAOYSA-N 0.000 description 1
- 239000003446 ligand Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
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- 230000015654 memory Effects 0.000 description 1
- LCGLNKUTAGEVQW-UHFFFAOYSA-N methyl monoether Natural products COC LCGLNKUTAGEVQW-UHFFFAOYSA-N 0.000 description 1
- 125000004108 n-butyl group Chemical group [H]C([H])([H])C([H])([H])C([H])([H])C([H])([H])* 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- 125000001147 pentyl group Chemical group C(CCCC)* 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- BHRZNVHARXXAHW-UHFFFAOYSA-N sec-butylamine Chemical compound CCC(C)N BHRZNVHARXXAHW-UHFFFAOYSA-N 0.000 description 1
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical group [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000001179 sorption measurement Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/28—Titanium compounds
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
- C07C31/00—Saturated compounds having hydroxy or O-metal groups bound to acyclic carbon atoms
- C07C31/02—Monohydroxylic acyclic alcohols
- C07C31/125—Monohydroxylic acyclic alcohols containing five to twenty-two carbon atoms
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/40—Oxides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02181—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing hafnium, e.g. HfO2
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Abstract
Description
で示される金属アルコキシド化合物。
(1)本願発明の金属アルコキシド化合物又は金属アルコキシド化合物の溶媒溶液と酸素源(特に、酸素ガス、オゾンガスが好ましい)とを用いてCVD法及びALD法により金属含有薄膜を製造する。
(2)本願発明の金属アルコキシド化合物又は金属アルコキシド化合物の溶媒溶液と窒素源(特に、アンモニアガス、窒素ガスが好ましい)とを用いてCVD法及びALD法により金属含有薄膜を製造する。
(3)本願発明の金属アルコキシド化合物又は金属アルコキシド化合物の溶媒溶液と不活性ガス(特に、アルゴンガス、ヘリウムガスが好ましい)とを用いてCVD法により金属含有薄膜を製造する。
攪拌装置及び温度計を備えた内容積100mlのフラスコに、アルゴン雰囲気にて、テトラキス(イソプロポキシ)ジルコニウム・イソプロパノール付加体5.11g(13.17mmol)及び2,4−ジメチル−3−ペンタノール10.12g(88.61mmol)を加え、液温を170℃まで昇温し、生成したイソプロパノールを留去しながら、同温度で30分間反応させた。反応終了後、反応液を減圧下で濃縮した後、濃縮物を減圧蒸留(150℃、12Pa)し、低粘性の透明液体として、テトラキス(2,4−ジメチル−3−ペントキシ)ジルコニウム5.73gを得た(単離収率;79%)。
元素分析:C28H60O4Zr
測定値 C:60.5%、H:11.1%、Zr:16.5%
理論値 C:60.9%、H:11.0%、Zr:16.5%
攪拌装置及び温度計を備えた内容積100mlのフラスコに、アルゴン雰囲気にて、テトラキス(イソプロポキシ)ジルコニウム・イソプロパノール付加体4.42g(11.41mmol)及び2−メチル−3−ペンタノール7.29g(71.36mmol)を加え、液温を170℃まで昇温し、生成したイソプロパノールを留去しながら、同温度で30分間反応させた。反応終了後、反応液を減圧下で濃縮した後、濃縮物を減圧蒸留(140℃、17Pa)し、白色固体として、テトラキス(2−メチル−3−ペントキシ)ジルコニウム4.18gを得た(単離収率;74%)。
元素分析:C24H52O4Zr
測定値 C:58.3%、H:10.4%、Zr:18.4%
理論値 C:58.1%、H:10.6%、Zr:18.4%
攪拌装置及び温度計を備えた内容積100mlのフラスコに、アルゴン雰囲気にて、テトラキス(イソプロポキシ)ジルコニウム・イソプロパノール付加体4.32g(11.15mmol)及び2−メチル−3−ヘキサノール9.17g(78.91mmol)を加え、液温を200℃まで昇温し、生成したイソプロパノールを留去しながら、同温度で30分間反応させた。反応終了後、反応液を減圧下で濃縮した後、濃縮物を減圧蒸留(150℃、12Pa)し、低粘性の透明液体として、テトラキス(2−メチル−3−ヘキソキシ)ジルコニウム4.20gを得た(単離収率;68%)。
元素分析:C28H60O4Zr
測定値 C:60.7%、H:11.3%、Zr:16.5%
理論値 C:60.9%、H:11.0%、Zr:16.5%
実施例1〜3で得られた式(2)〜(4)の本発明のジルコニウム化合物と、比較として合成した式(11)〜(15)のジルコニウム化合物について、それぞれの熱安定性を確認するため、一度蒸留を行った各化合物について再度蒸留を行い、その回収率を確認した。その結果を表1に示す。なお、化合物の構造を下記式に示す。但し、式中、Mはジルコニウム(Zr)を示す。
実施例1で得られた式(4)のジルコニウム化合物と、テトラキス(t−ブトキシド)ジルコニウム(非特許文献3のジルコニウムアルコキシド化合物)について、熱安定性の比較試験を行った。それぞれの化合物を、アルゴン雰囲気で250℃にて10時間加熱した後、熱処理後のジルコニウムアルコキシド化合物について、1H−NMRにより分解具合を観察し、また、再蒸留を行い、その回収率を確認し、それぞれの結果を比較した。その結果を表2に示した。
実施例1及び3で得られた式(4)及び(3)のジルコニウムアルコキシド化合物を用いて、CVD法による蒸着実験を行い、成膜特性を評価した。
攪拌装置及び温度計を備えた内容積100mlのフラスコに、アルゴン雰囲気にて、テトラキス(イソプロポキシ)ハフニウム・イソプロパノール付加体5.15g(10.84mmol)及び2,4−ジメチル−3−ペンタノール10.00g(86.06mmol)を加え、液温を170℃まで昇温し、生成したイソプロパノールを留去しながら、同温度で30分間反応させた。反応終了後、反応液を減圧下で濃縮した後、濃縮物を減圧蒸留(150℃、17Pa)し、低粘性の透明液体として、テトラキス(2,4−ジメチル−3−ペントキシ)ハフニウム4.94gを得た(単離収率;71.3%)。
元素分析:C28H60O4Hf
測定値 C:53.0%、H:9.7%、Hf:27.7%
理論値 C:52.6%、H:9.5%、Hf:27.9%
実施例10で得られた式(4)のハフニウム化合物(本発明)の熱安定性を確認するために再度蒸留を行い、その回収率を確認した。また、アルゴン雰囲気で250℃にて10時間加熱した後、熱処理後のハフニウム化合物について、1H−NMRにより分解具合を観察し、また、再蒸留を行い、その回収率を確認した。その結果は以下の通りであった。
再蒸留回収率;99%
熱処理前;無色透明液体
熱処理後;無色透明液体
熱処理後の再蒸留回収率;97%
熱処理後の1H−NMR(CDCl3,δ(ppm));変化なし
攪拌装置及び温度計を備えた内容積100mlのフラスコに、アルゴン雰囲気にて、テトラキス(イソプロポキシ)チタニウム5.00g(17.59mmol)及び2,4−ジメチル−3−ペンタノール10.00g(86.06mmol)を加え、液温を170℃まで昇温し、生成したイソプロパノールを留去しながら、同温度で30分間反応させた。反応終了後、反応液を減圧下で濃縮した後、濃縮物を減圧蒸留(160℃、21Pa)し、無色透明固体として、テトラキス(2,4−ジメチル−3−ペントキシ)チタニウム6.50gを得た(単離収率;72.6%)。
1H−NMR(CDCl3,δ(ppm));0.93(48H,m)、1.71(8H,m)、3.70(4H,m)
元素分析:C28H60O4Ti
測定値 C:66.3%、H:12.2%、Ti:9.3%
理論値 C:66.1%、H:11.9%、Ti:9.4%
攪拌装置及び温度計を備えた内容積100mlのフラスコに、アルゴン雰囲気にて、四塩化ジルコニウム4.02g(17.25mmol)及びメチルシクロヘキサン50mlを秤量し、水冷下でイソプロピルアミン12ml(140.08mmol)を滴下した。次に2,4−ジメチル−3−ペンタノール12ml(85.61mmol)を滴下して1時間反応させた後、反応液をろ過し、ろ液を濃縮した。濃縮物を減圧蒸留(160℃、13Pa)し、低粘性の透明液体として、テトラキス(2,4−ジメチル−3−ペントキシ)ジルコニウム7.71gを得た(単離収率;81.0%)。
攪拌装置及び温度計を備えた内容積50mlのフラスコに、アルゴン雰囲気にて、四塩化ジルコニウム4.12g(17.68mmol)及びメチルシクロヘキサン25mlを秤量し、水冷下でsec−ブチルアミン13ml(128.51mmol)を滴下した。この溶液を2,4−ジメチル−3−ペンタノール9.88g(85.03mmol)及びメチルシクロヘキサン25mlを仕込んだ攪拌装置及び温度計を備えた内容積100mlのフラスコに滴下して1時間反応させた。反応液をろ過し、ろ液を濃縮した。濃縮物を減圧蒸留(160℃、15Pa)し、低粘性の透明液体として、テトラキス(2,4−ジメチル−3−ペントキシ)ジルコニウム8.05gを得た(単離収率;82.5%)。
攪拌装置及び温度計を備えた内容積100mlのフラスコに、アルゴン雰囲気にて、四塩化ジルコニウム4.20g(18.02mmol)及びトルエン50mlを秤量し、水冷下でtert−ブチルアミン23.5ml(224.91mmol)を滴下した。次に2,4−ジメチル−3−ペンタノール12ml(85.61mmol)を滴下して1時間反応させた後、反応液をろ過し、ろ液を濃縮した。濃縮物を減圧蒸留(160℃、10Pa)し、低粘性の透明液体として、テトラキス(2,4−ジメチル−3−ペントキシ)ジルコニウム7.69gを得た(単離収率;77.3%)。
攪拌装置及び温度計を備えた内容積100mlのフラスコに、アルゴン雰囲気にて、四塩化ジルコニウム4.20g(18.02mmol)及びトルエン50mlを秤量し、水冷下でジエチルアミン16.5ml(157.92mmol)を滴下した。次に2,4−ジメチル−3−ペンタノール12ml(85.61mmol)を滴下して1時間反応させた後、反応液をろ過し、ろ液を濃縮した。濃縮物を減圧蒸留(160℃、11Pa)し、低粘性の淡黄色透明液体として、テトラキス(2,4−ジメチル−3−ペントキシ)ジルコニウム7.76gを得た(単離収率;76.7%)。
攪拌装置及び温度計を備えた内容積100mlのフラスコに、アルゴン雰囲気にて、四塩化ジルコニウム4.20g(18.02mmol)及びトルエン50mlを秤量し、系内を−10℃以下となるようにジエチルアミン16.0ml(153.13mmol)を滴下した。次に2,4−ジメチル−3−ペンタノール12ml(85.61mmol)を滴下して1時間反応させた後、反応液をろ過し、ろ液を濃縮した。濃縮物を減圧蒸留(160℃、11Pa)し、低粘性の透明液体として、テトラキス(2,4−ジメチル−3−ペントキシ)ジルコニウム7.92gを得た(単離収率;79.6%)。
攪拌装置及び温度計を備えた内容積100mlのフラスコに、アルゴン雰囲気にて、四塩化ジルコニウム4.20g(18.02mmol)及びトルエン50mlを秤量し、系内を−10℃以下となるようにジメチルアミン11.61g(257.54mmol)を滴下した。次に2,4−ジメチル−3−ペンタノール12ml(85.61mmol)を滴下して1時間反応させた後、反応液をろ過し、ろ液を濃縮した。濃縮物を減圧蒸留(160℃、11Pa)し、低粘性の透明液体として、テトラキス(2,4−ジメチル−3−ペントキシ)ジルコニウム7.81gを得た(単離収率;76.3%)。
攪拌装置及び温度計を備えた内容積100mlのフラスコに、アルゴン雰囲気にて、四塩化ハフニウム5.03g(15.71mmol)及びトルエン50mlを秤量し、水冷下でtert−ブチルアミン10ml(95.71mmol)を滴下した。次に2,4−ジメチル−3−ペンタノール10ml(71.34mmol)を滴下して1時間反応させた後、反応液をろ過し、ろ液を濃縮した。濃縮物を減圧蒸留(170℃、19Pa)し、低粘性の透明液体として、テトラキス(2,4−ジメチル−3−ペントキシ)ハフニウム3.50gを得た(単離収率;34.9%)。
攪拌装置及び温度計を備えた内容積100mlのフラスコに、アルゴン雰囲気にて、四塩化チタン5.85g(30.84mmol)及びトルエン50mlを秤量し、水冷下でtert−ブチルアミン16ml(153.13mmol)を滴下した。次に2,4−ジメチル−3−ペンタノール17.5ml(124.85mmol)を滴下して1時間反応させた後、反応液をろ過し、ろ液を濃縮した。濃縮物を減圧蒸留(160℃、17Pa)し、透明固体として、テトラキス(2,4−ジメチル−3−ペントキシ)チタニウム8.81gを得た(単離収率;56.2%)。
1B マスフローコントローラー
2 ストップバルブ
3 気化器
4 反応器
5 圧力計
6 バルブ
7 トラップ
8 ストップバルブ
10A 予熱器
10B 気化器ヒーター
10C 反応器ヒーター
20 金属アルコキシド化合物
21 基板
Claims (6)
- 請求項1に記載の金属アルコキシド化合物又は請求項1に記載の金属アルコキシド化合物の溶液を金属供給源として用いた化学気相蒸着法による金属含有薄膜の製造法。
- 請求項1に記載の金属アルコキシド化合物又は請求項1に記載の金属アルコキシド化合物の溶液と、酸素源とを用いた請求項2記載の化学気相蒸着法による金属含有薄膜の製造法。
- 請求項1に記載の金属アルコキシド化合物又は請求項1に記載の金属アルコキシド化合物の溶液と、窒素源とを用いた請求項2記載の化学気相蒸着法による金属含有薄膜の製造法。
- 請求項1に記載の金属アルコキシド化合物又は請求項1に記載の金属アルコキシド化合物の溶液と、不活性ガスとを用いた請求項2記載の化学気相蒸着法による金属含有薄膜の製造法。
- 前記金属アルコキシド化合物の溶液の溶媒が、脂肪族炭化水素類、芳香族炭化水素類及びエーテル類からなる群より選ばれる少なくとも1種である請求項2乃至5記載の化学気相蒸着法による金属含有薄膜の製造法。
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