SG79280A1 - A compound for aluminium film formation from chemical vapor deposition and a method of synthesis thereof - Google Patents
A compound for aluminium film formation from chemical vapor deposition and a method of synthesis thereofInfo
- Publication number
- SG79280A1 SG79280A1 SG9904472A SG1999004472A SG79280A1 SG 79280 A1 SG79280 A1 SG 79280A1 SG 9904472 A SG9904472 A SG 9904472A SG 1999004472 A SG1999004472 A SG 1999004472A SG 79280 A1 SG79280 A1 SG 79280A1
- Authority
- SG
- Singapore
- Prior art keywords
- synthesis
- compound
- vapor deposition
- film formation
- chemical vapor
- Prior art date
Links
- 230000015572 biosynthetic process Effects 0.000 title 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 title 1
- 229910052782 aluminium Inorganic materials 0.000 title 1
- 239000004411 aluminium Substances 0.000 title 1
- 238000005229 chemical vapour deposition Methods 0.000 title 1
- 150000001875 compounds Chemical class 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000003786 synthesis reaction Methods 0.000 title 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
- C23C16/20—Deposition of aluminium only
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C07F5/061—Aluminium compounds with C-aluminium linkage
- C07F5/065—Aluminium compounds with C-aluminium linkage compounds with an Al-H linkage
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
- C07F5/06—Aluminium compounds
- C07F5/061—Aluminium compounds with C-aluminium linkage
- C07F5/066—Aluminium compounds with C-aluminium linkage compounds with Al linked to an element other than Al, C, H or halogen (this includes Al-cyanide linkage)
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR19980038572A KR100289945B1 (ko) | 1998-09-15 | 1998-09-15 | 알루미늄박막의화학증착용전구체화합물및이의제조방법 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG79280A1 true SG79280A1 (en) | 2001-03-20 |
Family
ID=19551035
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG9904472A SG79280A1 (en) | 1998-09-15 | 1999-09-13 | A compound for aluminium film formation from chemical vapor deposition and a method of synthesis thereof |
Country Status (7)
| Country | Link |
|---|---|
| US (2) | US6121443A (https=) |
| EP (1) | EP0987270B1 (https=) |
| JP (1) | JP2000086673A (https=) |
| KR (1) | KR100289945B1 (https=) |
| DE (1) | DE69904129T2 (https=) |
| SG (1) | SG79280A1 (https=) |
| TW (1) | TW486482B (https=) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100316760B1 (ko) * | 1999-06-11 | 2001-12-12 | 신현국 | 알루미나 박막의 화학 증착용 전구체 화합물 및 이의 제조방법 |
| US7098339B2 (en) * | 2005-01-18 | 2006-08-29 | Praxair Technology, Inc. | Processes for the production of organometallic compounds |
| JP4711113B2 (ja) * | 2005-03-14 | 2011-06-29 | 株式会社トリケミカル研究所 | ＣＨ３ＡｌＨ２：Ｌの製造方法、Ａｌ系膜形成材料、Ａｌ系膜形成方法、及びＡｌ系配線膜形成方法 |
| KR100696858B1 (ko) | 2005-09-21 | 2007-03-20 | 삼성전자주식회사 | 유기 알루미늄 전구체 및 이를 이용한 금속배선 형성방법 |
| KR100689668B1 (ko) | 2005-09-26 | 2007-03-08 | 삼성전자주식회사 | 유기 알루미늄 전구체 및 이를 이용한 알루미늄 배선형성방법 |
| KR100724084B1 (ko) * | 2005-11-16 | 2007-06-04 | 주식회사 유피케미칼 | 디알킬아미도디하이드로알루미늄 화합물을 이용한 박막증착방법 |
| KR100829472B1 (ko) * | 2006-05-18 | 2008-05-16 | (주)디엔에프 | 알루미늄 박막의 화학증착용 전구체 화합물 및 이의제조방법 |
| KR100756403B1 (ko) * | 2006-05-18 | 2007-09-10 | (주)디엔에프 | 알루미늄 박막의 화학증착용 전구체 화합물의 제조방법 |
| US8597424B2 (en) * | 2007-12-26 | 2013-12-03 | Jsr Corporation | Composition and method for forming an aluminum film |
| US8268722B2 (en) * | 2009-06-03 | 2012-09-18 | Novellus Systems, Inc. | Interfacial capping layers for interconnects |
| US20110206844A1 (en) | 2010-02-24 | 2011-08-25 | Jacob Grant Wiles | Chromium-free passivation of vapor deposited aluminum surfaces |
| US9633896B1 (en) | 2015-10-09 | 2017-04-25 | Lam Research Corporation | Methods for formation of low-k aluminum-containing etch stop films |
| SG11202005468YA (en) | 2017-12-20 | 2020-07-29 | Basf Se | Process for the generation of metal-containing films |
| TWI839372B (zh) * | 2018-07-30 | 2024-04-21 | 南韓商Ｕｐ化學有限公司 | 鋁化合物和使用其形成含鋁膜的方法 |
Family Cites Families (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB905985A (en) | 1959-02-24 | 1962-09-19 | Ethyl Corp | Preparing metal-alumino hydrides |
| JPS57188026A (en) | 1981-05-14 | 1982-11-18 | Minolta Camera Co Ltd | Driving device for photographing lens of automatic focusing camera |
| US4923717A (en) * | 1989-03-17 | 1990-05-08 | Regents Of The University Of Minnesota | Process for the chemical vapor deposition of aluminum |
| JP2721023B2 (ja) * | 1989-09-26 | 1998-03-04 | キヤノン株式会社 | 堆積膜形成法 |
| US5113025A (en) | 1989-10-02 | 1992-05-12 | Ethyl Corporation | Selective reducing agents |
| US5178911A (en) * | 1989-11-30 | 1993-01-12 | The President And Fellows Of Harvard College | Process for chemical vapor deposition of main group metal nitrides |
| DE69120446T2 (de) * | 1990-02-19 | 1996-11-14 | Canon Kk | Verfahren zum Herstellen von abgeschiedener Metallschicht, die Aluminium als Hauptkomponente enthält, mit Anwendung von Alkylaluminiumhydrid |
| US5130459A (en) * | 1990-06-08 | 1992-07-14 | Nec Corporation | Selective chemical vapor deposition of aluminum, aluminum CVD materials and process for preparing the same |
| US5136046A (en) | 1990-09-28 | 1992-08-04 | Ethyl Corporation | Preparation of amine alanes |
| US5191099A (en) * | 1991-09-05 | 1993-03-02 | Regents Of The University Of Minnesota | Chemical vapor deposition of aluminum films using dimethylethylamine alane |
| JPH0912581A (ja) * | 1995-04-28 | 1997-01-14 | Sumitomo Chem Co Ltd | ジメチルアルミニウムハイドライド組成物及びその製造方法ならびにジメチルアルミニウムハイドライドの粘度調製方法 |
| US5900279A (en) | 1995-11-20 | 1999-05-04 | Tri Chemical Laboratory Inc. | Processes for the chemical vapor deposition and solvent used for the processes |
| JP2913583B2 (ja) * | 1996-09-24 | 1999-06-28 | 株式会社トリケミカル研究所 | Ａｌ膜形成材料及びＡｌ膜形成方法 |
-
1998
- 1998-09-15 KR KR19980038572A patent/KR100289945B1/ko not_active Expired - Fee Related
-
1999
- 1999-03-31 US US09/283,317 patent/US6121443A/en not_active Expired - Fee Related
- 1999-08-19 TW TW088114186A patent/TW486482B/zh not_active IP Right Cessation
- 1999-09-01 DE DE69904129T patent/DE69904129T2/de not_active Expired - Fee Related
- 1999-09-01 EP EP99306952A patent/EP0987270B1/en not_active Expired - Lifetime
- 1999-09-13 SG SG9904472A patent/SG79280A1/en unknown
- 1999-09-14 JP JP11259968A patent/JP2000086673A/ja active Pending
-
2000
- 2000-06-16 US US09/595,109 patent/US6380383B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| DE69904129T2 (de) | 2003-05-08 |
| DE69904129D1 (de) | 2003-01-09 |
| TW486482B (en) | 2002-05-11 |
| JP2000086673A (ja) | 2000-03-28 |
| EP0987270A3 (en) | 2001-06-06 |
| KR20000020137A (ko) | 2000-04-15 |
| KR100289945B1 (ko) | 2001-09-17 |
| EP0987270B1 (en) | 2002-11-27 |
| EP0987270A2 (en) | 2000-03-22 |
| US6380383B1 (en) | 2002-04-30 |
| US6121443A (en) | 2000-09-19 |
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