TW486452B - Joining body of crystalized glass and nitrogen oxide sintering body, and the preparation thereof - Google Patents
Joining body of crystalized glass and nitrogen oxide sintering body, and the preparation thereof Download PDFInfo
- Publication number
- TW486452B TW486452B TW089126978A TW89126978A TW486452B TW 486452 B TW486452 B TW 486452B TW 089126978 A TW089126978 A TW 089126978A TW 89126978 A TW89126978 A TW 89126978A TW 486452 B TW486452 B TW 486452B
- Authority
- TW
- Taiwan
- Prior art keywords
- weight
- glass
- rays
- crystals
- powder
- Prior art date
Links
- 239000011521 glass Substances 0.000 title claims abstract description 312
- 238000005245 sintering Methods 0.000 title claims abstract description 8
- 238000005304 joining Methods 0.000 title abstract description 6
- MWUXSHHQAYIFBG-UHFFFAOYSA-N Nitric oxide Chemical compound O=[N] MWUXSHHQAYIFBG-UHFFFAOYSA-N 0.000 title abstract 9
- 238000002360 preparation method Methods 0.000 title abstract 2
- 238000010438 heat treatment Methods 0.000 claims abstract description 66
- 238000000634 powder X-ray diffraction Methods 0.000 claims abstract description 65
- 239000000203 mixture Substances 0.000 claims abstract description 33
- 239000000758 substrate Substances 0.000 claims abstract description 25
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 8
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 5
- 239000013078 crystal Substances 0.000 claims description 193
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 claims description 107
- 239000010433 feldspar Substances 0.000 claims description 73
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 45
- 238000000034 method Methods 0.000 claims description 41
- 229910052681 coesite Inorganic materials 0.000 claims description 38
- 229910052906 cristobalite Inorganic materials 0.000 claims description 38
- 238000011049 filling Methods 0.000 claims description 38
- 229910052682 stishovite Inorganic materials 0.000 claims description 38
- 229910052905 tridymite Inorganic materials 0.000 claims description 38
- 229910016523 CuKa Inorganic materials 0.000 claims description 29
- 239000000843 powder Substances 0.000 claims description 25
- 238000004519 manufacturing process Methods 0.000 claims description 24
- 230000002079 cooperative effect Effects 0.000 claims description 22
- 239000000463 material Substances 0.000 claims description 21
- 229910052751 metal Inorganic materials 0.000 claims description 18
- 239000002184 metal Substances 0.000 claims description 18
- 239000000126 substance Substances 0.000 claims description 17
- 239000011575 calcium Substances 0.000 claims description 13
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 7
- 229910052593 corundum Inorganic materials 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 235000012239 silicon dioxide Nutrition 0.000 claims description 7
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 6
- 229910052791 calcium Inorganic materials 0.000 claims description 5
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 238000006243 chemical reaction Methods 0.000 claims description 4
- 229910044991 metal oxide Inorganic materials 0.000 claims description 2
- 150000004706 metal oxides Chemical class 0.000 claims description 2
- 230000005260 alpha ray Effects 0.000 claims 1
- 229910052725 zinc Inorganic materials 0.000 abstract description 36
- 238000004891 communication Methods 0.000 abstract description 4
- 230000005855 radiation Effects 0.000 abstract description 4
- 239000011701 zinc Substances 0.000 description 53
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 35
- 239000010410 layer Substances 0.000 description 34
- 238000001556 precipitation Methods 0.000 description 30
- 239000010949 copper Substances 0.000 description 19
- 239000002994 raw material Substances 0.000 description 13
- 238000002441 X-ray diffraction Methods 0.000 description 12
- 239000002244 precipitate Substances 0.000 description 12
- 239000010936 titanium Substances 0.000 description 12
- 238000002425 crystallisation Methods 0.000 description 11
- 230000008025 crystallization Effects 0.000 description 11
- 239000012299 nitrogen atmosphere Substances 0.000 description 11
- 239000012298 atmosphere Substances 0.000 description 10
- 239000004020 conductor Substances 0.000 description 10
- 229910052802 copper Inorganic materials 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 10
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 9
- 238000012360 testing method Methods 0.000 description 9
- 229910052661 anorthite Inorganic materials 0.000 description 8
- GWWPLLOVYSCJIO-UHFFFAOYSA-N dialuminum;calcium;disilicate Chemical compound [Al+3].[Al+3].[Ca+2].[O-][Si]([O-])([O-])[O-].[O-][Si]([O-])([O-])[O-] GWWPLLOVYSCJIO-UHFFFAOYSA-N 0.000 description 8
- 230000000694 effects Effects 0.000 description 8
- 238000010304 firing Methods 0.000 description 8
- 238000007650 screen-printing Methods 0.000 description 8
- 238000010292 electrical insulation Methods 0.000 description 7
- 238000002844 melting Methods 0.000 description 7
- 229910052596 spinel Inorganic materials 0.000 description 7
- 239000011029 spinel Substances 0.000 description 7
- -1 CMOS Proteins 0.000 description 6
- 150000001875 compounds Chemical class 0.000 description 6
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 6
- HTUMBQDCCIXGCV-UHFFFAOYSA-N lead oxide Chemical compound [O-2].[Pb+2] HTUMBQDCCIXGCV-UHFFFAOYSA-N 0.000 description 5
- 238000005259 measurement Methods 0.000 description 5
- 230000008018 melting Effects 0.000 description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- 229910052783 alkali metal Inorganic materials 0.000 description 4
- 150000001340 alkali metals Chemical class 0.000 description 4
- DLHONNLASJQAHX-UHFFFAOYSA-N aluminum;potassium;oxygen(2-);silicon(4+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Si+4].[Si+4].[Si+4].[K+] DLHONNLASJQAHX-UHFFFAOYSA-N 0.000 description 4
- 229910052799 carbon Inorganic materials 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 238000001816 cooling Methods 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 229910052652 orthoclase Inorganic materials 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 3
- 229910052691 Erbium Inorganic materials 0.000 description 3
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 3
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 3
- 150000001342 alkaline earth metals Chemical class 0.000 description 3
- 229910052804 chromium Inorganic materials 0.000 description 3
- 239000011651 chromium Substances 0.000 description 3
- 230000000875 corresponding effect Effects 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 238000005260 corrosion Methods 0.000 description 3
- VQCBHWLJZDBHOS-UHFFFAOYSA-N erbium(III) oxide Inorganic materials O=[Er]O[Er]=O VQCBHWLJZDBHOS-UHFFFAOYSA-N 0.000 description 3
- 239000011737 fluorine Substances 0.000 description 3
- 229910052731 fluorine Inorganic materials 0.000 description 3
- 238000005187 foaming Methods 0.000 description 3
- 229910052737 gold Inorganic materials 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 229910052750 molybdenum Inorganic materials 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 238000005476 soldering Methods 0.000 description 3
- 230000008961 swelling Effects 0.000 description 3
- 229910052721 tungsten Inorganic materials 0.000 description 3
- FIXNOXLJNSSSLJ-UHFFFAOYSA-N ytterbium(III) oxide Inorganic materials O=[Yb]O[Yb]=O FIXNOXLJNSSSLJ-UHFFFAOYSA-N 0.000 description 3
- 229910052727 yttrium Inorganic materials 0.000 description 3
- WUOACPNHFRMFPN-SECBINFHSA-N (S)-(-)-alpha-terpineol Chemical compound CC1=CC[C@@H](C(C)(C)O)CC1 WUOACPNHFRMFPN-SECBINFHSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- OVKDFILSBMEKLT-UHFFFAOYSA-N alpha-Terpineol Natural products CC(=C)C1(O)CCC(C)=CC1 OVKDFILSBMEKLT-UHFFFAOYSA-N 0.000 description 2
- 229940088601 alpha-terpineol Drugs 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 2
- 239000011230 binding agent Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910000019 calcium carbonate Inorganic materials 0.000 description 2
- WUKWITHWXAAZEY-UHFFFAOYSA-L calcium difluoride Chemical compound [F-].[F-].[Ca+2] WUKWITHWXAAZEY-UHFFFAOYSA-L 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000010941 cobalt Substances 0.000 description 2
- 229910017052 cobalt Inorganic materials 0.000 description 2
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 239000000470 constituent Substances 0.000 description 2
- 238000004455 differential thermal analysis Methods 0.000 description 2
- 230000001771 impaired effect Effects 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 229910003465 moissanite Inorganic materials 0.000 description 2
- 239000011733 molybdenum Substances 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 229910052758 niobium Inorganic materials 0.000 description 2
- 239000010955 niobium Substances 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 239000002667 nucleating agent Substances 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 230000001590 oxidative effect Effects 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000000049 pigment Substances 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 230000001376 precipitating effect Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 150000003839 salts Chemical class 0.000 description 2
- 229910021332 silicide Inorganic materials 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 229910052723 transition metal Inorganic materials 0.000 description 2
- 150000003624 transition metals Chemical class 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910021532 Calcite Inorganic materials 0.000 description 1
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 229910052692 Dysprosium Inorganic materials 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- 229910052688 Gadolinium Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910052689 Holmium Inorganic materials 0.000 description 1
- 229910003271 Ni-Fe Inorganic materials 0.000 description 1
- 229910008310 Si—Ge Inorganic materials 0.000 description 1
- 238000003723 Smelting Methods 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000272 alkali metal oxide Inorganic materials 0.000 description 1
- 150000001341 alkaline earth metal compounds Chemical class 0.000 description 1
- 229910052788 barium Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 230000001680 brushing effect Effects 0.000 description 1
- VSGNNIFQASZAOI-UHFFFAOYSA-L calcium acetate Chemical compound [Ca+2].CC([O-])=O.CC([O-])=O VSGNNIFQASZAOI-UHFFFAOYSA-L 0.000 description 1
- 239000001639 calcium acetate Substances 0.000 description 1
- 229960005147 calcium acetate Drugs 0.000 description 1
- 235000011092 calcium acetate Nutrition 0.000 description 1
- 229910001634 calcium fluoride Inorganic materials 0.000 description 1
- 239000003795 chemical substances by application Substances 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 150000001860 citric acid derivatives Chemical class 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 229940079593 drug Drugs 0.000 description 1
- 238000001035 drying Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 239000010436 fluorite Substances 0.000 description 1
- 239000006260 foam Substances 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000004820 halides Chemical class 0.000 description 1
- JYTUFVYWTIKZGR-UHFFFAOYSA-N holmium oxide Inorganic materials [O][Ho]O[Ho][O] JYTUFVYWTIKZGR-UHFFFAOYSA-N 0.000 description 1
- 150000004677 hydrates Chemical class 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-M hydroxide Chemical compound [OH-] XLYOFNOQVPJJNP-UHFFFAOYSA-M 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
- YOBAEOGBNPPUQV-UHFFFAOYSA-N iron;trihydrate Chemical compound O.O.O.[Fe].[Fe] YOBAEOGBNPPUQV-UHFFFAOYSA-N 0.000 description 1
- 229910052746 lanthanum Inorganic materials 0.000 description 1
- 229910000464 lead oxide Inorganic materials 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 229910052749 magnesium Inorganic materials 0.000 description 1
- 239000011777 magnesium Substances 0.000 description 1
- UEGPKNKPLBYCNK-UHFFFAOYSA-L magnesium acetate Chemical compound [Mg+2].CC([O-])=O.CC([O-])=O UEGPKNKPLBYCNK-UHFFFAOYSA-L 0.000 description 1
- 239000011654 magnesium acetate Substances 0.000 description 1
- 229940069446 magnesium acetate Drugs 0.000 description 1
- 235000011285 magnesium acetate Nutrition 0.000 description 1
- ZLNQQNXFFQJAID-UHFFFAOYSA-L magnesium carbonate Chemical compound [Mg+2].[O-]C([O-])=O ZLNQQNXFFQJAID-UHFFFAOYSA-L 0.000 description 1
- 229910000021 magnesium carbonate Inorganic materials 0.000 description 1
- 239000001095 magnesium carbonate Substances 0.000 description 1
- 229910001635 magnesium fluoride Inorganic materials 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 150000001247 metal acetylides Chemical class 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052863 mullite Inorganic materials 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 150000002823 nitrates Chemical class 0.000 description 1
- 238000005121 nitriding Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 150000003891 oxalate salts Chemical class 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052700 potassium Inorganic materials 0.000 description 1
- 239000012495 reaction gas Substances 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000012552 review Methods 0.000 description 1
- 235000015067 sauces Nutrition 0.000 description 1
- 229910052706 scandium Inorganic materials 0.000 description 1
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 150000003377 silicon compounds Chemical class 0.000 description 1
- 239000002356 single layer Substances 0.000 description 1
- 229910052708 sodium Inorganic materials 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 229910052712 strontium Inorganic materials 0.000 description 1
- 150000003467 sulfuric acid derivatives Chemical class 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/622—Forming processes; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/626—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B
- C04B35/63—Preparing or treating the powders individually or as batches ; preparing or treating macroscopic reinforcing agents for ceramic products, e.g. fibres; mechanical aspects section B using additives specially adapted for forming the products, e.g.. binder binders
- C04B35/6303—Inorganic additives
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B18/00—Layered products essentially comprising ceramics, e.g. refractory products
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
- C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
- C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
- C03C8/20—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing titanium compounds; containing zirconium compounds
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/16—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay
- C04B35/18—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on silicates other than clay rich in aluminium oxide
- C04B35/195—Alkaline earth aluminosilicates, e.g. cordierite or anorthite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
- C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
- C04B37/04—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
- C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
- C04B41/5022—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with vitreous materials
- C04B41/5023—Glass-ceramics
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
- C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
- C04B41/81—Coating or impregnation
- C04B41/85—Coating or impregnation with inorganic materials
- C04B41/86—Glazes; Cold glazes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/12—Mountings, e.g. non-detachable insulating substrates
- H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
- H01L23/15—Ceramic or glass substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
- H01L23/3731—Ceramic materials or glass
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
- C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
- C04B2111/00844—Uses not provided for elsewhere in C04B2111/00 for electronic applications
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3201—Alkali metal oxides or oxide-forming salts thereof
- C04B2235/3203—Lithium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3206—Magnesium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3208—Calcium oxide or oxide-forming salts thereof, e.g. lime
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3205—Alkaline earth oxides or oxide forming salts thereof, e.g. beryllium oxide
- C04B2235/3213—Strontium oxides or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3217—Aluminum oxide or oxide forming salts thereof, e.g. bauxite, alpha-alumina
- C04B2235/3222—Aluminates other than alumino-silicates, e.g. spinel (MgAl2O4)
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3224—Rare earth oxide or oxide forming salts thereof, e.g. scandium oxide
- C04B2235/3225—Yttrium oxide or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3232—Titanium oxides or titanates, e.g. rutile or anatase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3231—Refractory metal oxides, their mixed metal oxides, or oxide-forming salts thereof
- C04B2235/3244—Zirconium oxides, zirconates, hafnium oxides, hafnates, or oxide-forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3284—Zinc oxides, zincates, cadmium oxides, cadmiates, mercury oxides, mercurates or oxide forming salts thereof
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/32—Metal oxides, mixed metal oxides, or oxide-forming salts thereof, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3296—Lead oxides, plumbates or oxide forming salts thereof, e.g. silver plumbate
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3409—Boron oxide, borates, boric acids, or oxide forming salts thereof, e.g. borax
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3418—Silicon oxide, silicic acids or oxide forming salts thereof, e.g. silica sol, fused silica, silica fume, cristobalite, quartz or flint
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3427—Silicates other than clay, e.g. water glass
- C04B2235/3463—Alumino-silicates other than clay, e.g. mullite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/34—Non-metal oxides, non-metal mixed oxides, or salts thereof that form the non-metal oxides upon heating, e.g. carbonates, nitrates, (oxy)hydroxides, chlorides
- C04B2235/3427—Silicates other than clay, e.g. water glass
- C04B2235/3463—Alumino-silicates other than clay, e.g. mullite
- C04B2235/3481—Alkaline earth metal alumino-silicates other than clay, e.g. cordierite, beryl, micas such as margarite, plagioclase feldspars such as anorthite, zeolites such as chabazite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/36—Glass starting materials for making ceramics, e.g. silica glass
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3817—Carbides
- C04B2235/3826—Silicon carbides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3865—Aluminium nitrides
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/38—Non-oxide ceramic constituents or additives
- C04B2235/3852—Nitrides, e.g. oxynitrides, carbonitrides, oxycarbonitrides, lithium nitride, magnesium nitride
- C04B2235/3873—Silicon nitrides, e.g. silicon carbonitride, silicon oxynitride
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/40—Metallic constituents or additives not added as binding phase
- C04B2235/404—Refractory metals
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/30—Constituents and secondary phases not being of a fibrous nature
- C04B2235/40—Metallic constituents or additives not added as binding phase
- C04B2235/405—Iron group metals
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/54—Particle size related information
- C04B2235/5418—Particle size related information expressed by the size of the particles or aggregates thereof
- C04B2235/5436—Particle size related information expressed by the size of the particles or aggregates thereof micrometer sized, i.e. from 1 to 100 micron
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/80—Phases present in the sintered or melt-cast ceramic products other than the main phase
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/70—Aspects relating to sintered or melt-casted ceramic products
- C04B2235/96—Properties of ceramic products, e.g. mechanical properties such as strength, toughness, wear resistance
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
- C04B2237/40—Metallic
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
- C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
- C04B2237/70—Forming laminates or joined articles comprising layers of a specific, unusual thickness
- C04B2237/704—Forming laminates or joined articles comprising layers of a specific, unusual thickness of one or more of the ceramic layers or articles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8538—Bonding interfaces outside the semiconductor or solid-state body
- H01L2224/85399—Material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/42—Wire connectors; Manufacturing methods related thereto
- H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01012—Magnesium [Mg]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01019—Potassium [K]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/0102—Calcium [Ca]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01021—Scandium [Sc]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01039—Yttrium [Y]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01057—Lanthanum [La]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01066—Dysprosium [Dy]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01067—Holmium [Ho]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01068—Erbium [Er]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01078—Platinum [Pt]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01079—Gold [Au]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/095—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00 with a principal constituent of the material being a combination of two or more materials provided in the groups H01L2924/013 - H01L2924/0715
- H01L2924/097—Glass-ceramics, e.g. devitrified glass
- H01L2924/09701—Low temperature co-fired ceramic [LTCC]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12042—LASER
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1517—Multilayer substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/191—Disposition
- H01L2924/19101—Disposition of discrete passive components
- H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K1/00—Printed circuits
- H05K1/02—Details
- H05K1/03—Use of materials for the substrate
- H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4614—Manufacturing multilayer circuits by laminating two or more circuit boards the electrical connections between the circuit boards being made during lamination
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/46—Manufacturing multilayer circuits
- H05K3/4611—Manufacturing multilayer circuits by laminating two or more circuit boards
- H05K3/4626—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials
- H05K3/4629—Manufacturing multilayer circuits by laminating two or more circuit boards characterised by the insulating layers or materials laminating inorganic sheets comprising printed circuits, e.g. green ceramic sheets
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Structural Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Life Sciences & Earth Sciences (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Crystallography & Structural Chemistry (AREA)
- Dispersion Chemistry (AREA)
- Glass Compositions (AREA)
- Inorganic Insulating Materials (AREA)
- Ceramic Products (AREA)
Description
486452 A7 B7 五、發明說明(1 ) 技術領域 (請先閱讀背面之注意事項再填寫本頁) 本發明係關於結晶化玻璃及氮化鋁燒結體之接合體及 其製法。 技術背景 近年來,在行動電話等之無線通信或光學通信等領域 中,經高容量化之使用頻率在1 GHz以上之高波段,或者是 微波段•準微波段,業已被擴大使用了。 在這種高波段範圍動作之半導體,係可使用高出力· 高耗電之GaAs系FET、Si-Ge系HBT、CMOS或GaN系雷 射二極管等來做成。這種實際裝有電路基板之半導體,係 由具1)電路圖樣之電阻小者,2)小型化且可形成多層電 路,3)基板絕緣材料之熱傳導高者,而且4)電路基板材料 污染環境少等條件者而做成的。 然而,並不存在有完全滿足此等條件之單一的絕緣性 基板材料。雖然存在有使用高熱傳導性氮化鋁燒結體之多 層電路基板,但是該電氣電路導體係具有高電阻之鎢、鉬 系材料,而形成不適合的高頻電路。 經濟部智慧財產局員工消費合作社印製 爲了解決上述之問題,依據現實來考量,則可使用接 合氮化鋁燒結體與玻璃之複合電路基板。也就是說,以氮 化鋁燒結體上之半導體來擔任放熱角色,更在一部分的氮 化鋁燒結體上形成電氣電路,進而形成單一層或多層化之 塗裝印刷技術等用之玻璃層,在該表面上或內部中形成Au 系、Ag系或Cu系等低電阻材料之電氣電路之基板。 實現此種目的之電路基板之材料,係由具1)電氣絕緣 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 486452 A7 B7 五、發明說明(2 ) 性高且具良好的誘導特性,2)接近於氮化鋁燒結體之熱膨脹 係數,3)可透過氧化物膜而直接與氮化鋁燒結體結合,4)含 有可重覆燒成之結晶層,5)氮化鋁燒結體與上述玻璃接合溫 度之條件,係在Au系、Ag系或Cu系等噴鍍金屬成分之熔 點以下,具體而言係在ll〇〇°C以下或更低;換言之,必需 具有可在1100°C以下之作業溫度下,使得經軟化的玻璃與 氮化鋁燒結體可完全地接緊密合之特性。 此外,以含有氧化鉛之物來製作,係可比較容易地得 到低軟化點之玻璃。但是,含鉛玻璃雖然是易於使軟化點 達到低溫度化,然而其原有之毒性,會大大地影響地球環 境。更且,含鉛玻璃之熱膨脹係數,會容易地變高。再 者,在高溫時與氮化鋁燒結體反應,會有容易因反應氣體 殘存於玻璃中而引起發泡現象之缺點。 在做爲上述電路基板用之玻璃材料中,已知係可使用 特開平6-340443號、特公平7-68065號所記載之物。依據 特開平6-340443號之玻璃,由於含有多量的鈦、锆,更含 有鉛之故,使得其熱膨脹係數較氮化鋁燒結體之4.5 X 10-6/ 1大,因而其並未能解決所謂的熱膨脹係數比較大的缺 點。再者,該玻璃與氮化鋁燒結體之接合強度也是弱的。 於特公平7-68065號中之玻璃,雖然其熱膨脹係數或電氣絕 緣性等特點均良好,但是爲了得到與氮化鋁燒結體之良好 的接合性,則必需要以1000〜1500°C之高熱來處理。因此, 則必需要以2階段以上之工程來組合電氣電路。 本發明即是可以解決上述所示之課題者。本發明者, 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) -------^--------- 經濟部智慧財產局員工消費合作社印製 486452 A7 _B7_ 五、發明說明(3 ) 係具有「美國陶瓷協會期刊,1971年,第50卷,第6號, 第555〜557頁,作者爲R · A · GDULA」等所記之鈣長石結 晶(CaO · A1203 · Si02)燒結體之高電氣絕緣性(28 X 1015 Ω ·公分:25°C )、小介電係數(6.2 : 1MHz,25°C )以及接近 於氮化鋁燒結體之熱膨脹係數(48 X 10-7/°C : 150°C〜700 °C);更且,著眼於對以H2等之還原氛圍氣體中之加熱安 定物性,刻意的加重硏究。 結果’爲了加熱而析出齡長石結晶而含有Ca、Si和A1 成分之非晶質玻璃,不含有多量的Pb成分之熔融溫度會較 低,在以1100°C以下之比較低的溫度時,會顯示出與氮化 鋁燒結體之良好的接合性;而且可以見到因加熱而析出利 用CuKa射線之粉末X射線繞射而在20=27.6°〜28.2°時 具最強的射線之結晶;更且,該所析出的結晶化玻璃之結 晶成分,不但具有上述鈣長石結晶燒結體而來之特質,而 且在形成多層的高熱安定性玻璃層時,反覆地加熱也可以 見到具安定性。(又且,如上記所述,具有因加熱而析出利 用CuKa射線之粉末X射線繞射而在20=27.6°〜28.2°時 具最強的射線組成之結晶,在以下之場合係稱爲原料玻 璃。) 而且,再者,可使用含有Zn成分、以CuK a射線之粉 末X射線繞射而在20=27.6°〜28.2°時具特有最強的射線 之結晶,其析出溫度更可是低到25〜100°C以上者來做爲原 料玻璃,而且可以見到該結晶之尖銳的析出圖樣。而且, 因此可以較低溫來製造出結晶化之玻璃與氮化鋁接合體; 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂---------線一 經濟部智慧財產局員工消費合作社印製 486452 A7 B7 五、發明說明() 而且該所製造出之結晶化玻璃,係可能比較難發生腫脹或 殘留碳素。 又且,如上述組成之玻璃,含有多量的Ti、zr成分之 結晶化核劑,而使得可能充分地析出結晶;因此’可以看 出大體上與氮化鋁燒結體燒結體相等之熱膨脹係數。 發明揭示 意即,本發明係提供一種接合體,其係將由結晶質部 分和非結晶質部分所成之結晶化玻璃,與氮化鋁燒結體予 以燒結而成,該結晶質部分係以利用CuKa射線之粉末X 射線繞射而在20=27.6°〜28.2°時具最強的射線之結晶爲 主而成;在該結晶化玻璃組成分中,係含有換算成氧化物 計係爲0.5~30重量%之Zn成分;而且其中Ti成分和Zr成 分,換算成氧化物計係在10重量%以下;而Pb成分換算成 氧化物計係在5重量%以下。 其次,本發明係提供一種結晶化玻璃與氮化鋁繞結體 之接合體之製造方法,其特徵在於:在氮化鋁燒結體上形 成玻璃層,藉由在該非結晶質玻璃之軟化點以上加熱,來 接合玻璃層和氮化鋁燒結體;而且藉由加熱將玻璃中利用 CuKa射線之粉末X射線繞射,在20 =27.6°〜28.2°時具最 強的射線之結晶予以析出;其中該玻璃層係含有換算成氧 化物計係爲0.5〜30重量%之Zn成分;而且Ti成分和Zr成 分,換算成氧化物計係在10重量%以下;而Pb成分換算成 氧化物計係在5重量%以下的組成之實質上非結晶質之玻 璃。又且,本發明之型態,係關於一種接合體之製造方 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) -------訂---------線- 經濟部智慧財產局員工消費合作社印製 486452 A7 B7 五、發明說明() 法,該接合體係在結晶化玻璃附加氮化鋁燒結體上,藉由 加熱來接合電氣電路層而成。 更且,本發明上述之接合體等,其最好是使用具有由 結晶質部分和非結晶質部分所成之結晶化玻璃,該結晶質 部分係以利用CuKa射,線之粉末X射線繞射而在20=27.6 ° ~28.2°時具最強的射線之結晶爲主,該結晶化玻璃係 Ca〇:8〜25重量% 、A1203 : 15〜35重量%、Si〇2 : 33〜55重 量%、B203 : 0.05〜18重量%及Zn〇:0.5〜25重量%所成。 構成本發明接合體之結晶化玻璃,係由結晶質部分和 非結晶質部分所成。 因爲只有從結晶質部分所變成之化合物,其軟化溫度 會變高,因此藉由加熱來接合氮化鋁燒結體係極爲困難 的。其次,如果含有非結晶質部分之結晶化玻璃,雖然是 可以比較低的溫度來接合氮化鋁燒結體,但是使該非結晶 質部分成爲100%結晶化之非結晶質部分,係極其困難的。 另一方面,由非結晶質部分所成之玻璃,係具高的熱膨脹 係數,而且具低劣的電氣特性•耐藥品性。 該結晶質部分,係含有利用CuKa射線之粉末X射線 繞射而在20=27.6°〜28.2°時具最強的射線之結晶(以下, 稱爲A結晶)爲主之結晶相。依照第1圖所示這種結晶成分 之代表例,其係爲;ICPDS(粉末繞射標準聯合會)之粉末繞射 檔案編號爲20-20所示之鈣長石結晶(CaO · A1203 · Si〇2 ; CaA12Si〇8)。 當所析出之主要結晶係爲利用CuKa射線之粉末X射 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) --------訂---------線一 經濟部智慧財產局員工消費合作社印製 486452 A7 B7 五、發明說明(6 ) 線繞射而在20=27.6°〜28.2°時具最強的射線之結晶(A結 晶)’係可以得到如下之效果。意即,具有如前述A結晶之 代表例之鈣長石結晶,其係會因具高電氣絕緣性、小介電 係數,而變成極爲優異性質之電氣電路基板。此外,由於 熱膨膜係數係接近於氮化錦燒結體’則全體結晶化玻璃之 熱膨脹係數,也幾乎等於氮化鋁燒結體,並且由於在還原 氛圍氣體中之加熱下,而也可以反覆地加熱形成多層的安 定性玻璃層。則,其耐:藥品性,也會比非結晶質玻璃更向 上增加。 該A結晶,雖然也可以藉由加熱預定組成之非結晶質 玻璃而在玻璃上析出,但是此時利用含有Zn成分之非結晶 質玻璃,與未含有者相較之下,該A結晶之析出溫度係可 以低到25〜100°C之程度。再者,在含有Zn成分之場合中, 由於A結晶之析出圖樣係會變得尖銳,而使得氣泡或碳素 成分變得容易脫離,而可得到物性極爲良好之最終所得到 的結晶化玻璃之效果。此一效果,在氮化鋁和結晶化玻璃 之接合工程’與由非結晶質玻璃而來之結晶之析出工程同 時進行加熱之際,會變得更顯著。因爲玻璃與氮化鋁之接 合,通常,必需要在氮氛圍氣體之非氧化性氛圍氣體中來 進行。
因此,在摻混有Zn成分之原料玻璃中,依加熱條件係 會使得在玻璃中除了 A結晶以外之結晶質部分,進一步析 出利用CuKa射線之粉末X射線繞射,在20 =27.6°〜2 8.2 。時具最強的射線之結晶(以下,稱爲B結晶)之場合。該B 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公Μ ) (請先閱讀背面之注意事項再填寫本頁) --象 訂-------- 經濟部智慧財產局員工消費合作社印製 486452 A7 B7 五、發明說明(7 ) 結晶之之代表例,其係與:TCPDS之粉末繞射檔案編號爲5-669 所示之鋅尖長石結晶(ΖηΟ · A1203 · 2Si02 ; ZnA1204)。 如上所述,本發明之結晶化玻璃之結晶質部分,其係 會析出利用CuKa射線之粉末X射線繞射,在20 =27.6° ~28.2°時具最強的射線之A結晶;而且雖然會析出利用 CuKa射線之粉末X射線繞射,在20 =36.6°〜37.0°時具最 強的射線之B結晶;但是本發明之結晶不得不以A結晶爲 主。因爲,在A結晶之代表例,鈣長石結晶係具有與氮化 鋁燒結體相近的4.8 X 10-6/°C之線膨脹係數,而相對的B結 晶之代表例,鋅尖長石結晶之線膨脹係數爲較大的7.7 X 10-6/°C,則結晶化玻璃之線膨脹係數必定極難與氮化鋁燒 結體相同。又且,在以此爲主之結晶中,其應顯示出可以 後述之結晶析出量決定方法所求得A結晶之量,至少需佔 結晶質部分之50重量%以上,而較宜是在60重量%以上, 最好是在70重量%以上。 一方面,雖然是不含有B結晶也可以,但是最好是 有,以佔晶質部分之10〜40重量%較宜,而最好是在10〜30 重量%左右。雖然是傾向於希望析出多量的B結晶,同時A 結晶之析出量也多,但是一方面如前述,B結晶之熱膨脹係 數係比A結晶來得高,而不宜是多量的。 本發明結晶化玻璃之全結晶量,雖然是可利用CuK α 射線之粉末X射線繞射,來完全確認其程度,基於熱膨脹 係數、電氣特性、耐久性及軟化溫度等觀點來看,以後述 之結晶析出量決定方法所求得Α結晶及Β結晶之總量,宜 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) --------^--------- 經濟部智慧財產局員工消費合作社印製 486452 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(8 ) 是1〜90重量%,較佳係3~85重量%,更好是30〜80重量% ’ 而最好是40~70重量%。以高溫製造結晶量多之玻璃,係可 得到與氮化鋁燒結體完全接合之強度。另一方面,結晶量 少時,則熱膨脹係數會變大,而電氣特性、耐藥品性、耐 久性等則會有變差之傾向。 在結晶質部分之量爲30〜80重量%時,其中以具有 60~90重量%之A結晶和10〜40重量%之B結晶爲宜;而在 結晶質部分之量爲40〜70重量%時,其中以具有70〜90重量 %之A結晶和10〜30重量%之B結晶爲宜。 再者,在不損及本發明之效果時,也可以析出利用 CuKa射線之粉末X射線繞射而在20=27.6°〜28.2°時具最 強的射線之結晶,以及在20 =36.6° ~37.0°時具最強的射 線之結晶以外的結晶。 在本發明之結晶化玻璃中之A結晶量及B結晶量,依 次以下述之方法來求出。此外,以下,茲以具A結晶之代 表例之鈣長石,以及具B結晶之代表例之鋅尖長石爲例來 說明之。 首先’藉由粉末X射線繞射法與示差熱分析,將可看 出結晶化之終點。加熱非結晶質狀態之玻璃所析出之結 晶’而不進一步在以上高溫或長時間加熱來結晶化之狀 態’並不是含有最大量的鈣長石及鋅尖長石結晶之狀態。 此時含有鈣長石和鋅尖長石所顯示之粉末χ射線繞射線之 最強線(利用CuKa射線時,鈣長石係顯現在2 0=27.6。 〜28.2。時;而鋅尖長石則在20=36.6。〜37 〇。時表現出)之 -1 0 - 本紙張尺度適用中國國家標準(CNS)A4規格(210 χ 297公爱) (請先閱讀背面之注意事項再填寫本頁) 訂---------線一 486452 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明說明(9 ) 強度比’係爲辞尖長石結晶與錦長石結晶之莫耳比(以下, 鋅尖長石/鈣長石之莫耳比稱爲R)。如此,在本發明結晶化 玻璃中所含有的鈣長石結晶與鋅尖長石結晶兩者構成分之 A1203,則可依照前記R來分配兩者之分量。在玻璃不析出 鋅尖長石結晶之情況下,則不必要將A1203分開而全部做 爲鈣長石結晶成分來計算。 接著,求出結晶化玻璃中之結晶之最大析出量。關於 鈣長石結晶之最大析出量,其被認爲是在構成鈣長石之 CaO · A1203 · Si02中,當以所含有成分之莫耳比最小者來 做爲基準時,則所生成的鈣長石結晶,係會消耗掉該成爲 鈣長石結晶析出之全部的最小含有成分,其餘之2成分則 依Ca〇:A1203 : Si〇2 = l : 1 : 2之莫耳比而被消耗掉。於 是,此時之CaO、A1203、Si02量之總合,即是本發明中所 析出鈣長石結晶之最大量。而且,依照本發明,A1成分係 以A1203爲單位來計算。又且,此算法中所使用的A1203 之含有量,係依照前述R所分配而求出之鈣長石計算量。 另一方面,鋅尖長石結晶之最大析出量之算法,其被 認爲是:當以構成鋅尖長石之ZnO、A1203中所至少含有成 分之莫耳比來做爲基準時,則所生成的鋅尖長石結晶,係 會消耗掉該成爲鋅尖長石結晶析出之全部的最小含有成 分,其餘之成分則依Zn〇:A1203 = l : 1之莫耳比而被消耗 掉。於是,此時之CaO、A1203量之總合,即是本發明中所 析出鋅尖長石結晶之最大量。而且此算法中所使用的A1203 之含有量,係依照前述R所分配而求出之鋅尖長石計算 -11 - 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) I I · I---I--訂------丨丨· *5^· (請先閱讀背面之注意事項再填寫本頁) 486452 A7 B7 ~--------- 五、發明說明(% ) 量° 例如,在玻璃爲CaO : 15重量% (2·68毫莫耳/克)、 Α1203 : 24 重量% (2_35 毫莫耳 /克)、Sl〇2 : 42 重量 % (7〇〇 毫莫耳/克)、B203 : 8重量% (1.14毫莫耳/克)、Zn〇 ·· 15重 量% (2.68毫莫耳/克)之場合下,自非結晶狀態起以9〇〇。〇加 熱到結晶化τη成’並觀察之。該經9 0 0 °C加熱後之結晶化玻 璃中,鈣長石與鋅尖長石之比(R)爲0.3769。 從而,依照R = 0.3769來分配A1203 ·· 24重量% (2.35 毫莫耳/克),則在鈣長石結晶中爲17.43重量% (1.71毫莫耳 /克);在鈴尖長石結晶中爲6.57重量% (0.64毫莫耳/克)。 因爲’所得到的CaO : 15重量% (2.68毫莫耳/克)、 A1203 : 17.43 重量 % (1.71 毫莫耳/克)、Si02 : 42 重量 % (7.00毫莫耳/克)之具鈣長石構成之玻璃組成,則依照具最 小含有成分之A1203含有量,而求得鈣長石結晶之最大析 出量,即 CaO : 9.58 重量 %、A1203 : 17.43 重量 %、Si〇2 : 20.54重量%之總量:47.55重量%。 同理,由Zn〇:11重量% (1.36毫莫耳/克)、A1203 : 6.57重量% (0.64毫莫耳/克),則Zn〇:5.24重量% (0.64毫 莫耳/克)及A1203 : 6.57重量% (0.64毫莫耳/克)之總合1.81 重量%,即是鋅尖長石結晶之最大析出量。 從而,此結晶化玻璃中,合倂鈣長石結晶和鋅尖長石 結晶之最大結晶析出量爲59.36重量%。 又,殘留的Ca〇:5.42重量%、Si〇2 ·· 21.46重量%、 ZnO : 5.76重量%及B2〇3 : 8重量%即當做是求出來之形成 -1 2 - 本紙張尺度適用中國國家標準(CNS)A4規格(21ϋ χ 297公髮) (請先閱讀背面之注意事項再填寫本頁) 訂---------線一 經濟部智慧財產局員工消費合作社印製 486452 A7 ___B7 五、發明說明(11 ) 非結晶質之玻璃基材量。 經由上記方法所算出來結晶之最大析出量與X射線繞 射強度、以及實際的結晶化玻璃之X射線繞射強度,可算 出結晶化玻璃中之結晶析出量。 例如,自上開成分之非結晶質狀態之原料玻璃開始, 以高溫來進行加熱,不久即達到鈣長石結晶和鋅尖長石結 晶之最大含有狀態,顯示鈣長石結晶特有的最強射線之粉 末X射線繞射強度(讀數)爲1170;而顯示鋅尖長石結晶特 有的最強射線之粉末X射線繞射強度(讀數)爲441。 具有在該原料玻璃加熱途中祇析出鈣長石結晶狀態之 物中,其X射線繞射(讀數)爲55之場合下,則可求出該加 熱途中之鈣長石結晶含有量係爲2.24重量%(47.55 X 55 / 1170 = 2.24)。 更且,具有在該原料玻璃加熱途中也析出鋅尖長石結 晶狀態之物中,其X射線繞射(讀數)爲90之場合下,則可 求出該加熱途中之鋅尖長石結晶含有量係爲2.41重量 %(11·81 X 90 / 441 = 2.41)。又,於加熱途中之鋅尖長石結 晶含有量爲2.41重量%之玻璃中,在顯不釣長石結晶之X 射線繞射強度(讀數)爲1116之場合下;則可求出該結晶化 玻璃中之鈣長石結晶量係爲45.36重量%;合計鈣長石結晶 和鋅尖長石結晶之結晶含有量,即變成47.77重量%。 上記之在加熱途中所析出的鈣長石結晶含有量係爲 2.24重量%之玻璃中,其結晶部分爲CaO : 0.45重量%、 A1203 ·· 0.82重量%、Si〇2 : 0.97重量% ;而非結晶部分爲 -13- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) " ' (請先閱讀背面之注意事項再填寫本頁) - 訂---------線一 經濟部智慧財產局員工消費合作社印製 486452 A7 B7 $、發明說明(12)
Ca〇:14.55 重量 %、A1203 : 23.18 重量 %、Si〇2 ·· 14.04 重 量%、B203 : 8重量%及ZnO : 11重量%。 再者’所析出的鈣長石結晶含有量爲45.36重量%,而 所析出的鋅尖長石結晶含有量爲2.41重量%之玻璃中,其 鈣長石結晶部分係Ca〇:9.14重量%、A1203 ·· 16.62重量 %、Si02 : 19.59重量% ;鋅尖長石結晶部分爲A1203 ·· 1.34 重量%、ZnO : 1·〇7重量% ;而非結晶部分爲CaO : 5·86重 量%、Α1203 : 6.04 重量%、Si〇2 : 22.41 重量%、Β203 : 8 重量%及ZnO : 9.93重量%。 此外’在A結晶和B結晶爲各種鈣長石結晶和鋅尖長 石結晶以外之場合下,也可以上記同樣的方法來決定其組 成。 本發明所用的含有鈣長石結晶之結晶化玻璃,其通常 會含有Ca、A12和Si。做爲鈣長石結晶析出之該成分,可 預料得到,其利用CuK α射線之粉末X射線繞射,係在2 0 = 27.6°〜28.2°時具最強的射線。而且,該成分也存在有非 結晶質部分。 在結晶化玻璃中之Ca成分,換算成CaO計,以含有 5〜25重量%較佳,而更宜是8~25重量%。當CaO成分含量 過少時,可推測到在結晶化玻璃中,係難以析出鈣長石結 晶之結晶。相反的過多時,與氮化鋁燒結體接合時,會生 成裂縫而具有接合性變差之傾向。 A1成分以換算成A1203計,以含有15〜40重量%較 佳,而更宜是15〜35重量%。當A1成分含量過少時,則鈣 -14- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) .1»衣 訂---------線: 經濟部智慧財產局員工消費合作社印製 486452 A7 B7 五、發明說明(13) 長石結晶之析出會不良。相反的過多時,與氮化鋁燒結體 接合,則有必需要以更高的溫度之傾向。 再者,Si成分也是如此,當Si成分含量過少時,則鈣 長石結晶之析出會不良,相反的過多時,與氮化鋁燒結體 接合,則有必需要以更高的溫度之傾向。較佳之Si成分以 換算成Si02計,係含有25〜60重量%,而更宜是33〜55重 量% 〇 本發明結晶化玻璃中,含有Zn成分係相當重要的。藉 由摻混有Zn成分,利用CuK α射線之粉末X射線繞射而在 2 0 =27.6°〜28.2°時具最強的射線之Α結晶,其析出的溫度 可比不摻混時低25~100°C。再者,由於該結晶之析出圖樣 銳利之故,而可以防止在結晶化玻璃中殘留碳素或發生腫 脹。 在Zn成分之場合下,會析出B結晶(例如)鋅尖長石結 晶。因此,在Zn成分多時,析出A結晶之方法,較宜是析 出大部分是A1成分之B結晶,(例如)析出鋅尖長石結晶。 從而,Zn成分之含有量,以換算成ZnO計係宜爲0.5〜30重 量% ;而較宜是0.5〜25重量%。再者,Zn〇也可存在於非結 晶質部分中。 本發明之結晶化玻璃係具低軟化點,爲了使與氮化鋁 燒結體之接合性良好,較宜是摻混有硼(B)。但是,含有多 量的硼(B)成分時,由於會增加吸溼性而使得耐葯品性低 下,較宜是不會影響,因而,以換算成B 203計宜含有 0.05〜20重量%,更宜是0.05〜18重量%。B203係存在於結 •15- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂---------線. 經濟部智慧財產局員工消費合作社印製 486452 A7 _B7___ 五、發明說明(14 ) 晶化玻璃之非結晶質部分中。 一般來說,爲了析出結晶化玻璃中之結晶成分,應摻 混有作爲結晶化核劑之Ti及/或Zr成分。但是,由於Ti及/ 或Zr成分會使得結晶化玻璃之熱膨脹係數增大,而不宜摻 混多量。更且,因爲含有此成分多量時,則會造成妨害 CaO · Ti02 · Si〇2結晶或CaO · Zr〇2 · 2Ti〇2 · Si〇2結曰0曰、 Zr02 · Si02結晶等結晶之析出,也妨害利用CuK α射線之 粉末X射線繞射而在2(9=27.6°〜28.2°時具最強的射線之 結晶的析出。此外,本發明係檢討了此點,由於以上述 Ca〇、Α1 203、Si〇2、Ζη〇及Β203來做爲構成分,全部均 未含有Ti及/或Zr成分而可完全的析出結晶量。結晶化玻 璃,由於接近於後述氮化鋁燒結體之熱膨脹係數,則Ti及/ 或Zr成分之摻混量,以換算成氧化物計宜在10重量%以 下,更宜是5重量%以下,而特別是實質上完全未含有者最 佳。 本發明之結晶化玻璃係與氮化鋁燒結體接合。一般而 言,玻璃之軟化點係較低,爲了容易與陶瓷接合,則在玻 璃中摻混Pb成分。因Pb在高溫下與氮化鋁燒結體起反應 會發生氣體,則在結晶化玻璃中會因此而發生膨脹。從 而,玻璃中所含有的Pb成分愈少愈好,具體而言,以換算 成氧化物計係不得不在5重量%以下;而更宜是在玻璃中實 質上不含有Pb成分。 本發明之結晶化玻璃中除了上述之成分之外,也可以 爲了使玻璃軟化點低下,更且爲了達到與氮化鋁燒結體之 -16- 冢紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐1 (請先閱讀背面之注意事項再填寫本頁) *·-1®^ -------訂---------線· 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 486452 A7 ____B7___ 五、發明說明(15 ) 接合性向上增加之目的,而摻混其他的成分。舉例來說’ 例如鹼金屬(Li、Na、K)或Ca以外之鹼土金屬(Mg、Sr、Ba) 等可做爲這樣的成分。然而,當摻混這樣的成分係多量 時,一方面結晶化玻璃之電氣特性(例如介電係數或電阻性) 或而葯品性會變差,一方面熱膨脹係數也會變高。 又且,也可以摻混不會損害本發明效果之其他成分。 在 Ca〇、A1203、Si〇2、Zn〇、B2〇3、Pb〇、Ti〇2 及 Zr〇2成分以外之成分,以氧化物來換算,宜是在7重量% 以下。特別是,鹼金屬成分,換算成氧化物計,宜是在2 重量%以下;鹼土金屬成分,換算成氧化物計,宜是在5重 量%以下;鹼金屬成分和鹼土金屬成分之總量,換算成氧化 物計,宜是在5重量%以下;而更宜是實質上不含有。又, 含有該成分並不會造成問題。 又,在本發明之結晶化玻璃中,在不會損害本發明效 果之範圍內,也可摻混不能換算成氧化物之氟素成分。 當考量後述原料之容易取得或容易製造、電阻性或介 電係數等電氣特性、與後述氮化鋁燒結體之接合性良好或 具一致的熱膨脹係數、耐熱性或耐葯品性等平衡時,本發 明結晶化玻璃之組成中,將各構成成分換算成氧化物計, 宜是由Ca〇:5〜25重量%、A1203 : 15〜40重量%、Si02 : 25〜60 重量 %、B203 : 0.05〜20 重量 %、ZnO : 0.5〜30 重量 %、Ti02 + Zr02 : 0〜5重量%、PbO : 0〜5重量%、其他金屬氧 化物:0〜7重量% (惟,此等各組成分合計爲100重量%)所 組成之結晶化玻璃;而更宜是由CaO : 8〜25重量%、 -17- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁)
486452 A7 ___ B7 五、發明說明(16 ) A1203 ·· 15〜35 重量 %、Si〇2 : 33-55 重量 %、B203 : 0.5〜18 重量%、ZnO : 0·5~25重量% (惟,此等各組成分合計爲1〇〇 重量%)所組成之結晶化玻璃。更且,上述組成中,Ζη〇最 好是·· 3〜18重量%。 本發明之利用CuKa射線之粉末X射線繞射而在2 0 = 27.6°〜28.2°時具最強的射線之結晶,係具有高電阻性和 小介電係數等電氣特性,通常,電阻係數係在1 X 1012Ω · 公分以上,介電係數在1GHz時爲8以下。由於爲了使後敘 所形成的結晶化玻璃或氮化鋁燒結體,可充分地發揮電氣 回路特性,該結晶化玻璃之電阻係數宜是在1 X 1013Ω ·公 分以上,而更較宜是在1 X 1014Ω ·公分。再者,該結晶化 玻璃之介電係數在1GHz時宜是在7.5以下,而更宜是在7 以下。做爲本發明之接合體,特別合宜的是具有lx 1014 Ω ·公分以上之電阻係數,而且具在1GHz時爲7以下之介 電係數。 本發明之結晶化玻璃,係可依照公知的方法來製造。 具體來說,調製可析出利用CuKa射線之粉末X射線繞射 而在2 0=27.6°〜28.2°時具最強的射線之結晶所組成的非 結晶質玻璃,以預定的溫度來加熱該非結晶質玻璃,而可 以在玻璃中析出結晶。 此非結晶質玻璃,其軟化溫度及結晶之析出溫度宜是 在1100°C以下,而更宜是在105CTC以下,更佳是在97(TC 以下,最佳是在900°C以下。 這樣的非結晶質玻璃,一旦在將由前記之化學組成所 -18- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) " (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------· 經濟部智慧財產局員工消費合作社印製 486452 A7 B7 五、發明說明() 調合成的原料予以熔融後,係可藉由急速冷卻之方法,來 製造一旦非結晶質化之玻璃。 做爲在該非結晶質玻璃之製造方法中所使用之原料, 舉例來說係可用與其目的相對應之各種氧化物。氧化物係 不侷限於單純氧化物而已,也可使用複合之氧化物。再 者,做爲上述製造方法中所使用之原料,除了氧化物以 外,宜使用碳酸鹽、氫氧化物。更且,也可使用氟化物、 氯化等鹵化物;硝酸鹽、硫酸鹽等無機鹽;草酸鹽、檸檬 酸鹽等有機酸鹽;金屬鹼氧化物等有機金屬化合物;以及 其之水合物等。 上述氧化物以外之化合物之具體的例子,舉例來說 有:CaC〇3、Ca(〇H)2、乙酸鈣、CaC12、CaF2、A1(〇H)3、 A1C13、A1F3、碳酸鎂、醋酸鎂、MgC12、MgF2、H3B03、 四乙基矽化物等。又,可使用如Si02這樣的天然物質。 詳細來說,依照上述之製造方法,稱量換算成氧化物 之在目的組成中之原料化合物量並混合之,在1200~17°C左 右使之熔融。經熔融得組成物,以在水冷金屬板上流出等 方法,使之急冷而玻璃化。以X射線繞射分析來確認此非 結晶質。玻璃之X射線繞射圖形,係爲利用CuK α射線於 0=18°〜35°範圍內之圖樣,其顯示出在25°附近具有穩定 之峰値(第2圖)。 在適當的加熱條件下,該非結晶質玻璃係可析出利用 CuKa射線之粉末X射線繞射而在2 0 =27.6。〜28.2。時具最 強的射線之A結晶(第4、5圖)。又,依照該組成及加熱條 -19- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) £—— (請先閱讀背面之注意事項再填寫本頁) 訂: 經濟部智慧財產局員工消費合作社印製 A7 —~ __B7 五、發明說明(18) 件,係可析出A結晶,更加地可析出利用CuK α射線之粉 末X射線繞射而在20 =36.6°〜37.0°時具最強的射線之Β 結晶(第6〜9圖)。 本發明之接合體,係可由上述之結晶化玻璃與氮化鋁 燒結體接合而成。 在本發明接合體中所使用之氮化鋁燒結體,係以Α1Ν 爲主成分之組成所成之燒結體,並不限於使用公知之物而 成。除了 Α1Ν以外,爲了減低燒成溫度係可使用Υ203、 Yb203、Er2〇3、Ho2〇3、或含有 Sc、Y、Er、Yb、Dy、 Ho、Gd、La等其他烯土族元素化合物;CaO、SrO等鹼土 族金屬化合物之燒結劑、或例如Li20等鹼金屬或Si02、 Si3N4、SiC等矽化合物;更且,爲了使成爲黑色化之燒結 體,可使用含有例如Mo、W、V、Nb、Ta、Ti等金屬及其 金屬化合物或含有碳素之物。 氮化鋁燒結體之表面,其係可依照所對應之目的而選 擇燒成狀態之表面、洗淨或搪磨之物、表面經硏削之物、 硏磨成鏡面之物等。 就燒結體之熱傳導性或對葯品性、熱膨脹係數、電氣 特性、光學特性及製造容易度等來考量,宜使用實質上不 含有其他成分之A1N燒結體,或者含有Y或Er化合物,以 換算成氧化物(Yb203、Er203)計爲0.1〜15重量%之A1N燒 結體。更宜是使用含有Y或Er化合物,以換算成氧化物 (Yb203、Er2〇3)計爲0.5〜10重量%之A1N燒結體。 本發明之製造結晶化玻璃與氮化鋁燒結體之接合體之 -20- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) ·. 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 i〇〇452 A7 r^_____B7_ _ 五、發明說明(19) 方法’宜是使用這樣的方法,特佳是採用以下之方法。 意即,在氮化鋁燒結體上所形成的含有上述之由於加 熱’而可析出利用CuK α射線之粉末X射線繞射在2 0 = 27.6°〜28.2°時,具最強的射線之結晶所組成的非結晶質 玻璃(原料玻璃)之玻璃層,係在該原料玻璃之軟化點以上加 熱’而使得玻璃與氮化鋁燒結體接合。利用CuK α射線之 粉末X射線繞射而在20=27.6°〜28.2。時具最強的射線之 結晶,雖然係可以用有別於該接合目的之加熱而析出,但 宜是利用同時可析出與接合之加熱。也就是說,在加熱經 形成氮化鋁燒結體之原料玻璃層時,係以在原料玻璃之軟 化點以上,而且在利用CuK α射線之粉末X射線繞射而在2 Θ =27.6°〜28.2°時,具最強的射線之結晶之析出溫度以上 之加熱溫度來一次加熱,而製造出結晶化玻璃與氮化鋁燒 結體之接合體。 該加熱溫度雖然隨著原料玻璃之組成而不同,但宜是 600〜1100°C ’更宜是800〜1050°C,較宜是800〜970°C,最宜 是800~900°C。加熱溫度過低時,會有接合或結晶析出不完 全的傾向;相對的,加熱溫度過高時,則一方面會有結晶 析出量多的傾向,一方面不僅會消耗能源(等不利因素),使 得在後述之電氣電路形成之場合下,不僅構成該電氣電路 之An、Ag、Cii等金屬會熔融,而且也難形成適切的電路。 再者,在形成多層玻璃層之場合,或在後述之電氣電 路形成之時,來進行其他的加熱等場合下,在複數次來進 行加熱之場合’係指該結晶質部分不會析出氮化錦燒結體 -21 - 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁)
486452 A7 ___ B7_______ 五、發明說明(2〇 ) 和結晶化玻璃1次接合物,而係在此後之加熱中析出。 而且,本發明之製造接合體之方法,並不侷限於上述 之方法,必要時,可使用已析出的結晶之一部分來做爲原 料玻璃,更且在軟化•接合之際來加熱而析出結晶之方 法,也可以使用在複數次之重複的塗布玻璃膏糊、加熱· 軟化後,最後再進行加熱而析出結晶之方法。 該結晶之析出,係可以利用CuKa射線之粉末X射線 繞射來確認之。依照本發明所析出之結晶,係在20 =27.6° 〜28.2°時具最強的射線。又,最強的射線爲在2 0 =27.6° 〜28.2°時所析出的結晶,而在20=36.6° ~37.0°時具特有 最強的射線之結晶,在進一步結晶化時,從而係顯示出在2 0 =31.0° ~3 1.4°具第二強的繞射射線。 前述在氮化鋁燒結體上形成原料玻璃之方法,係可使 用公知的方法。 具體來說,微粉末化之原料玻璃,與有機接合劑及溶 劑一起混合而成爲膏糊。較宜是以網版印刷等手法,將該 膏糊塗布在氮化鋁燒結體之表面上,再加熱使有機成分揮 散。 在原料玻璃膏糊化時,依據製造膏糊之容易性、在與 氮化鋁燒結體接合燒成後所形成的玻璃表面之平滑性等特 點來看,該玻璃粉末之粒子大小宜是0.1〜20微米,更宜是 0.3〜10微米,而最宜是0.5〜6微米。 又,就結晶化玻璃與氮化鋁燒結體之熱膨脹係數等而 論,爲了使低判電係數化或使脫接著性增加,可在原料玻 -22- ^紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) "~ (請先閱讀背面之注意事項再填寫本頁) - 訂---------線一 經濟部智慧財產局員工消費合作社印製 486452 經濟部智慧財產局員工消費合作社印製 A7 —____B7___ 21五、發明說明() 璃之膏糊中,加入有效的A1203、Si02、Si3N4、SiC、 AIN、莫來石、尖晶石、蓳青石等陶瓷粉末來做爲塡料。再 者,在不影向特性之範圍內,也可以含有鈷、鎳、鉻等過 渡金屬之顏料,例如以換算成氧化物計,可添加5重量%以 下之過渡金屬,而呈現出綠色、藍色、褐色等顏色。一般 來說,顏料宜是尖晶石系粉末。 依照本發明,由含有A結晶之結晶化玻璃和氮化鋁燒 結體所成之接合體,該結晶化玻璃與氮化鋁燒結體之接合 強度,以各種裝置組件在使用時之信賴性或耐久性等點來 看,以90°C、垂直張力試驗所得之平均接合強度宜是在 25MPa以上,更是在35MPa以上,而較佳是在50MPa以 上。 依照本發明之接合體,宜是在結晶化玻璃之表面或內 部中形成電氣電路。而者,也可以在氮化鋁燒結體之表面 上形成電氣電路。 就做爲電氣電路而言,並不限於使用含有導體、阻抗 性材料及介電材料等公知之物而成。又,其形成方法,係 可使用公知之方法而成。 在所形成的電氣電路中,係可使用Au、Ag、Cu等低 電阻•低熔點金屬,以及鎢、鉬等高熔點金屬,白金系、 鎳、鉻、鈷、鈦、鉻、鉅、鈮及其合金之各種金屬材料, 此等金屬之氮化物、碳化物、矽化物等。在上述之各種材 料中,Au、Ag、Cu等低電阻材料係較廣泛地使用。爲了避 免此等材金屬成分熔融,理想上係不在110CTC以上加熱而 -23- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) " (請先閱讀背面之注意事項再填寫本頁)
P 11111 線 486452 A7 B7 29 五、發明說明() 製造,更期望是不在1050°C以上加熱。 形成電氣電路之方法,可採用使用金屬膏糊之網目刷 印法,電解或無電解鍍膜法,噴鍍或蒸著之類的薄膜形成 法等公知的方法。 在氮化鋁燒結體之表面上形成電氣電路之場合,而在 製造出結晶化玻璃與氮化鋁燒結體之接合體前,係可預先 在氮化鋁燒結體之一面或複數面(例如,相對存在之2個面) 上形成電氣電路。此場合下,結晶化玻璃係可能與覆蓋在 氮化鋁燒結體表面上之電氣電路接合,也可能與不覆蓋電 氣電路接合,也可能與僅覆蓋一部分之電氣電路接合。更 且,結晶化玻璃係可能與僅覆蓋在氮化鋁燒結體表面之一 個面上者接合,也可能與覆蓋複數個面者而接合。此場合 下,在氮化鋁燒結體之複數個面上所形成的電氣電路,宜 是以結晶化玻璃來覆蓋其一面上之電氣電路,而並不覆蓋 其他面。又,也可以一面全不覆蓋,而僅覆蓋其一部分。 再者,爲了防止形成電氣電路之材料腐蝕,而在形成 電氣電路之材料表面上,施予軟銲之場合所熔融之軟銲 物,爲了防止流出不必要的軟銲物等目的,也可以不與電 氣電路接觸而與氮化鋁燒結體接合。 在結晶化玻璃之表面上形成電氣電路之場合,也可以 上述同樣的方法,在氮化鋁燒結體表面上形成電氣電路。 又,可做爲在結晶化玻璃表面上形成電氣電路之方法,首 先,係在原料玻璃表面上形成會因加熱而形成電氣電路之 物質之層,在加熱該積層物而在表面上形成電氣電路層來 -24- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) f-· -------訂---------線. 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 486452 A7 B7___ 23 五、發明說明() 做爲結晶化玻璃之後,覆有電氣電路層上更形成玻璃層’ 再度加熱玻璃使成爲一體化,而且可返覆地操作之方法。 依照此方法所製造的玻璃積層體’其接合部分’較宜是藉 由熔融而沒有可以目視確認之隙縫所成之一體化者’在此 場合下,各個未完全一體化之玻璃層及其接合面,也包括 在本發明之實施例態樣之內。 更且,在以多階段積層這樣的玻璃時,也可使用各層 相異組成之玻璃。例如,與氮化鋁燒結體接觸之層,係可 用接合性高而軟化點低之玻璃;而與大氣接觸之層,係可 用對藥品性高之玻璃等。又,在不損壞本發明效果之範圍 內,也可採用不含有利用CuKa射線之粉末X射線繞射而 在20 =27.6°〜28.2°時具最強的射線之結晶之玻璃。做爲 此場合之例子,舉例來說有如後述第20圖之頂面玻璃4。 又且,此等電氣電路之形成方法之實施例態樣,舉例 來說,係可採用公知的由含有氮化鋁燒結體表面及/或非結 晶質之原料玻璃所成之玻璃層上,以網目刷印法來塗布導 電性金屬膏糊,藉由在800〜970°C來加熱該積層體,使非結 晶玻璃膏糊變換成結晶化玻璃,接合結晶化玻璃與氮化鋁 燒結體,以及同時進行變換導電性膏糊之電氣電路之方 法。 在構成多層上述電氣電路及結晶化玻璃之場合,結晶 化玻璃之機能係做爲各個電氣電路間之絕緣層。做爲絕緣 層機能之結晶化玻璃之厚度,爲使容易形成良好的電氣絕 緣性與各個電氣電路間之電氣連結通孔,或容易形成均一 -25- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 訂---------線 經濟部智慧財產局員工消費合作社印製 486452 A7 ___B7_ 24 五、發明說明() 的厚度,則1層宜是1〜300微米,更宜是3~100微米,而最 宜是5〜70微米。 本發明亦提供一種如上所述之藉由加熱而形成結晶化 玻璃、氮化鋁燒結體及電氣電路之方法。 在此場合下,經變換的結晶化玻璃所做成之原料玻璃 也未必要含有Zn成分,也可能析出利用CuK α射線之粉末 X射線繞射而在20=27.6°〜28.2°時具最強的射線之結晶, 而且’如果以Ti成分及Zr成分以換算成氧化物計係在10 重量%以下、Pb成分係在5重量%以下之非結晶之玻璃,則 也可以得到本發明之效果。無論Zn成分是否在0.5〜30重量 %,其製造方法之加熱溫度愈低愈好。 本發明之由結晶化玻璃和氮化鋁燒結體而成之接合體 之較佳的實施例態樣,該接合體係含有60〜90重量%之利用 CuK α射線之粉末X射線繞射而在20 =27.6° ~28.2。時具最 強的射線之結晶;10〜40重量%之利用CuK α射線之粉末X 射線繞射而在20=36.6°〜37.0°時具最強的射線之結晶; 該結晶化玻璃之組成係由Ca〇-A12〇3-Si〇2-B203-Zn0系結 晶化玻璃;該結晶化玻璃和氮化鋁燒結體所成之接合體係 具9(TC、垂直張力試驗之平均接合強度爲35MPa以上;而 且在結晶化玻璃之表面及/或內部中係形成多層之電氣電 路。 更佳的實施例態樣,係在上述接合體中之結晶質部分 係佔40〜70重量%,其中70〜90重量%爲鈣長石結晶,1〇〜30 重量%爲鋅尖長石;該結晶化玻璃之電阻係數爲i x 1014 -26- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) " (請先閱讀背面之注意事項再填寫本頁)
486452 A7 B7
OR 五、發明說明() Ω ·公分以上,在1MHz之介電係數爲7以下;該結晶化玻 璃和氮化鋁燒結體所成之接合體係具90°C、垂直張力試驗 之平均接合強度爲50MPa以上;而且在結晶化玻璃之表面 及/或內部中係形成多層之電氣電路。 第20圖所示者,即爲電路基板例子之一。在第20圖 中之氮化鋁燒結體2上,係形成3層之結晶化玻璃1。結晶 化玻璃之內部、表面、氮化鋁燒結體基板表面上係形成配 線導體3。該配線導體係使用以Cu、Ag和Au爲主體之低 電阻材料。其他係形成保護配線導體之頂面玻璃4、導通用 孔6等。在該電路基板上所搭載的係爲半導體晶片5、電阻 體或之類的晶片組件7。 本發明之接合體,並不僅限於第20圖所示之物,而玻 璃層宜形成1層及2層,或4層以上之物。再者,半導體 晶片之安裝,雖然是不宜從放熱點通到第20圖之氮化鋁燒 結體上之玻璃層,但可藉由電路設計而通過薄玻璃來安 裝。在此場合下,玻璃層之厚度宜是在100微米以下。 又,半導體晶片係在如第20圖所示之玻璃層側面上,也可 以安裝在相對之側面上。 在本發明中,含有利用CuKa射線之粉末X射線繞射 而在2(9=27.6°〜28.2°時具最強的射線之結晶之結晶化玻 璃,由於係具有耐藥品性外,也具有優良之耐酸性、耐電 漿蝕刻性等,當避免將藉由與氮化鋁燒結體接合之氮化鋁 燒結體直接曝露於嚴酷的環境時,則會賦與氮化鋁燒結體 之向上提昇的耐藥品性(特別是對耐鹼性或熔融鹽之耐腐蝕 -27- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) £—— (請先閱讀背面之注意事項再填寫本頁) 訂: 經濟部智慧財產局員工消費合作社印製 486452 A7 B7 五、發明說明(26 ) 性)、耐酸性(特別是對在氧化性氣氛中,600°C以上之高溫 下之耐腐蝕性)、耐電漿蝕刻性(特別是在製造半導體裝置 中,對含有氯、氟等腐蝕性元素之耐電漿蝕刻性)。從而, 本發明之結晶化玻璃與氮化鋁燒結體之接合體,除了係可 應用於上述電路基板以外,也可應用於機械組件或加熱器 等之高溫構造材料、半導體製造裝置之冶練工具上。 圖示之簡單說明 第1圖係將在實施例1中所得到的Ca〇-A12〇3-Si02-B203-Zn0系非結晶質玻璃,於900°C下加熱20分鐘之物件 之粉末X射線繞射圖與JCPDS卡之比較圖。 第2圖係由實施例1所得到的Ca〇-A12〇3-Si02-B2〇3-Zn〇系非結晶質玻璃之粉末X射線繞射圖。 第3圖係將在實施例1中所得到的CaO-A12〇3-Si〇2-B203-Zn0系非結晶質玻璃,於800°C下加熱20分鐘之物件 之粉末X射線繞射圖。 第4圖係將在實施例1中所得到的Ca〇-A12〇3-Si〇2-B203-Zn0系非結晶質玻璃,於830°C下加熱20分鐘之物件 之粉末X射線繞射圖。 第5圖係將在實施例1中所得到的Ca0-A1203-Si〇2-B203-Zn0系非結晶質玻璃,於840°C下加熱20分鐘之物件 之粉末X射線繞射圖。 第6圖係將在實施例1中所得到的Ca〇-A1203-Si〇2-Β2〇3-ΖιιΟ系非結晶質玻璃,於850°C下加熱20分鐘之物件 之粉末X射線繞射圖。 -28- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) Γ讀先閱讀背面之注意事項再填寫本頁) 裝--------訂---------
經濟部智慧財產局員工消費合作社印製 486452 A7 B7_ 五、發明說明(27 ) 第7圖係將在實施例1中所得到的Ca〇_A12〇3-Si〇2-B203-Zn0系非結晶質玻璃,於875°C下加熱20分鐘之物件 之粉末X射線繞射圖。 第8圖係將在實施例1中所得到的Ca〇_A12〇3-Si〇2-B203-Zn0系非結晶質玻璃,於900°C下加熱20分鐘之物件 之粉末X射線繞射圖。 第9圖係將在實施例1中所得到的Ca〇-A1203-Si〇2-Β203·Ζη0系非結晶質玻璃,於i〇〇〇°c下加熱20分鐘之物 件之粉末X射線繞射圖。 第10圖係將在實施例1中所得到的Ca〇-A1203-Si〇2-B203-Mg0系非結晶質玻璃,於850°C下加熱20分鐘之物件 之粉末X射線繞射圖。 第11圖係將在實施例1中所得到的Ca0-A1203-Si〇2-B203-Mg0系非結晶質玻璃,於下加熱20分鐘之物件之 粉末X射線繞射圖。 第12圖係將在實施例1中所得到的Ca〇-A1203-Si〇2-B203-Mg0系非結晶質玻璃,於i〇〇〇°C下加熱20分鐘之物 件之粉末X射線繞射圖。 第13圖係由實施例2所得到的Ca0-A1203-Si02-B2〇3-Zn〇系非結晶質玻璃之粉末X射線繞射圖。 第14圖係將在實施例2中所得到的Ca〇-A1203-Si〇2-B203-Zn0系非結晶質玻璃,於800°C下加熱20分鐘之物件 之粉末X射線繞射圖。 第15圖係將在實施例2中所得到的Ca0-A1203-Si〇2- -29- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) ------I 1 訂 — — — — — — —--· 經濟部智慧財產局員工消費合作社印製 486452 Α7 Β7 經濟部智慧財產局員工消費合作社印製 五、發明說明() B203-Zn0系非結晶質玻璃,於850°C下加熱20分鐘之物件 之粉末X射線繞射圖。 第16圖係將在實施例1中所得到的Ca0-A1203-Si〇2-B203-Zn0系非結晶質玻璃,於875°C下加熱20分鐘之物件 之粉末X射線繞射圖。 第17圖係將在實施例2中所得到的Ca〇-A1203-Si〇2-B203-Zn0系非結晶質玻璃,於900°C下加熱20分鐘之物件 之粉末X射線繞射圖。 第18圖係將在實施例2中所得到的Ca0-A1203-Si〇2-B203_Zn0系非結晶質玻璃,於950°C下加熱20分鐘之物件 之粉末X射線繞射圖。 第19圖係將在實施例2中所得到的Ca〇-A1203-Si02-B203-Zn0系非結晶#璃,於i〇〇〇t:下加熱分鐘之物 件之粉末X射續—―離她幽 實施例及參考 以下 明並不僅限於此等實施例之物件而已。 實施例1 在乾式球磨機中混合具有CaO ·· 15重量% ; A1203 ·· 24 重量 % ; Si02 : 42 重量 % ; B203 : 8 重量 % ; ZnO : 11 重量 % 之組成的原料,而調製成60克之原料摻混物。將白金放入 其中以160(TC來熔融之。然後,除了使用做爲Ca0來源之 CaC03粉末以外,尙使用氧化物粉末之原料。使熔融液在 有冷水流通之不銹鋼板上急冷而得到玻璃。以粉末X射線 -30-
根。/¾成離人碱瑪與名, 根據實施例來具體地說_#發明,但本發 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) -------訂---------線 __ 486452 A7 B7
OQ 五、發明說明() 繞射來調查該玻璃之非結晶質。其繞射圖形係示於第2 圖。 其次,以球磨機將玻璃粉碎成5微米之平均粒徑,將 鋁放入該粉末中,以昇溫速度20°C/分來加熱之,在800 °C、83(TC、84(TC、85CTC、875 °C、900°C、1000°C 之各個 溫度下保持20分鐘。冷卻後,以粉末X射線繞射調查之。 其結果,雖然以80CTC加熱之物並不變成結晶化(第3圖), 但是可以確認出用CuKa射線之粉末X射線繞射而在20 = 27.6°〜28.2°時具最強的射線之結晶(第4圖)。以840°C 時’係會進一步結晶化(第5圖),以850°C時,則可確認出 在20 =36.6°〜37.0°時具最強的射線之結晶,以及在20 = 27·6°〜28.2°時具最強的射線之結晶量乃大增(第6圖)。 第7〜9圖爲各以875。0:、900°C、100(TC加熱之物之粉末X 射線繞射圖。 比較所析出的結晶之(在20=27.6°〜28.2°附近之繞射 線)之強度,以8751、900°C、1000°C加熱之物之結晶化程 度不大有變化,結晶析出係在85(TC附近開始急遽的增加。 之後,以83〇°(:及84〇°(:加熱係無法辨認出在2 0二27.6 °〜28·2°時具最強的射線之結晶,在850°C時則有少量析 出,進而在875°C〜900°C時結晶化。 將此結晶與;FCPDS比較,在20 =27.6°〜28.2°時具最 強的射線之結晶係爲鈣長石結晶,同樣的,在20 =36.6° 〜37.0°時具最強的射線之結晶係爲鋅尖長石結晶(第1圖)。 又,不可確認出其他的結晶。又且,在第6〜9圖中歸屬於 -31 - (請先閱讀背面之注意事項再填寫本頁) 裝
經濟部智慧財產局員工消費合泎fi印製 486452 A7 __B7___ 30 五、發明說明() 鈣長石結晶之峰値係標記爲〇,而其他的繞射峰値則歸類 爲鋅尖長石結晶。 又,此種玻璃之利用CuKa射線之粉末X射線繞射上 之繞射強度、R及結晶量係示於表1。 依據差分熱分析(以昇溫速度爲20°C/分鐘來加熱),結 晶化完成之溫度爲925°C。與上述之X射線繞射結果一致。 在900°C加熱之結晶化玻璃之結晶量,用已敘述之方法來求 出,係爲59.36重量%。其中,鈣長石結晶爲47.55重量%, 而鋅尖長石爲11.81重量%,其餘的爲非結晶質之玻璃基 材。又,關於X射線繞射之條件,全部的試樣係使用飛利 浦公司製之PW1 830型全自動粉末X射線繞射裝置,以Cu 陰極在標記電壓•電流40仟伏特、40毫安培所發生的Κα 射線。將X射線繞射用之試樣予以粉末化,緊密地充塡於 玻璃製15X20毫米之長方形附有夾座之容器中。之後,X射 線強度係將直接計數之強度減去X射線背景計數強度之差 而求得其讀數。 非結晶質部分之組成係具59.36重量%之結晶量之結晶 化玻璃,其中Ca〇:5.44重量% ; Si02 : 21.45重量% ; B203 : 8重量% ; ZnO : 5.76重量% ;並具有2.235重量%之 結晶量之結晶化玻璃,其中Ca〇:14.55重量% ; A1203 : 23.18 重量 % ; Si02 : 41.04 重量 % ; B203 : 8 重量 % ; ZnO : 11重量%。 以300公斤重/平方公分之壓力,來加壓上述粉碎成平 均粒徑爲5微米之玻璃粉末使之成形,在大氣中以900 °C加 -32- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------
經濟部智慧財產局員工消費合作社印製 486452 A7 B7 五、發明說明() 熱來製作結晶化玻璃之成形體。成形體之形狀有1X1X60毫 米之角棒、5X5X50毫米之角柱、直徑30毫米X2毫米厚之 圓板等3種。在20°C、60Rh%之恒溫恒溼條件下,用該燒 結體來測定其高頻下之介電係數及直流電阻。以擾動法來 測定1X1X60毫米之試驗片,其介電係數之結果,在1GHz 爲6.6,在3GHz爲6·7和在10GHz爲6.4,其係比氮化鋁燒 結體者小。熱膨脹係數係以5X5X50毫米之試驗片來測定, 在100〜500°C之熱膨脹係數爲4.8xl0-6/°C。以圓板來測定直 流電阻,施加500V1分鐘後,可得到5.9Χ1015Ω ·公分之 高電氣絕緣性。 其次,在前述急冷後,將10克之粉碎成平均粒徑爲5 微米之玻璃粉末、4克做爲溶劑之α -萜品醇,0.15克之做 爲結合劑之乙基纖維素予以混合,而製作成膏糊。以網版 印刷法將該膏糊塗佈於40X45X0.63 5毫米之氮化鋁燒結體基 板(托庫夕馬公司製,商品名爲SH30)上。當該膏糊乾燥 後,在大氣中或Ν2氛圍氣中以昇溫速度爲20°C /分鐘、在 900°C下加熱20分鐘而燒成。在大氣中或N2氛圍氣中之燒 成品冷卻後,結晶化玻璃與氮化鋁燒結體會緊密地接合, 但沒有見到裂縫、剝離。又,返覆爲之,在接合體中也見 不到。之後,以相同的條件,返覆操作4次後,則發生不 完全的接合。在N2氛圍氣中燒成試樣中之結晶化玻璃,係 具黑色化傾向或見不到腫脹•發泡現象。 用上述剩下的未達乾燥前之玻璃膏糊之未完成的基 板’以網版印刷法,在玻璃膏糊上塗佈做爲固形分之由純 -33- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注音?事項再填寫本頁) 裝--------訂---------
經濟部智慧財產局員工消費合作社印製 486452 A7 B7__ 32 五、發明說明() 銅粉做成之金屬銅膏糊(京都艾雷庫斯公司製,商品名爲 DD3200A),並乾燥成直徑2.5毫米X13微米厚之圓板狀。 在N2氛圍氣中將玻璃膏糊乾燥,於900°C下20分燒成之。 以銅膏糊所燒結的銅等,將在此所成的金屬銅銲於直徑爲 1·2毫米之42%Ni-Fe合金棒上,並進行垂直張力試驗。該 金屬銅部分之10個測定結果,其平均値爲56MPa,或者是 說,最小値爲29MPa,最大値爲80MPa。依據此強度試驗, 可見到破壞模數強度低之金屬銅部分被破壞了。雖然,強 度高的物質,如結晶化玻璃之內部或氮化鋁燒結體之內部 也被破壞了,但是在所有的測定中,結晶化玻璃及氮化鋁 燒結體之界面附近並不被破壞,由此可確定該結晶化玻璃 和氮化鋁燒結體之接合性,乃是強固的。 參考例1 和實施例1 一樣的,調製由Ca〇:16重量% ; A1203 : 27 重量 % ; Si02 : 44 重量 % ; B203 : 9 重量% ; MgO : 4 重 量%所組成的非結晶質玻璃。在800 °C、850°C、900。0及 1000°C之各個溫度下,加熱此非結晶質玻璃各20分鐘。該 加熱後之X射線繞射圖樣係表示於第10〜12圖中。 此玻璃在20=27.6°〜28.2°時之X射線強度係示於表 1 ° 依據表1可明白:在低溫時,含有Zn成分之實施例1 之玻璃,比沒有含Zn成分之參考例1,更會析出鈣長石結 晶。思即’顯不出實施例1之玻璃’在830 °C開始析出韩長 石結晶,於840 °C成長,在850 °C加熱下而急遽的析出。 -34- ^紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 一 ~ (請先閱讀背面之注意事項再填寫本頁) ---------訂---------· 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 486452 A7 __B7 _ 33 '*"""· 五、發明說明() 但,在850°C所析出之物,與在l〇〇(TC者,沒有什麼差別。 另一方面,沒有含Zn成分之參考例1之玻璃,在900加 熱所析出錦長石結晶量,雖然與實施例1在840°C加熱者相 等,但相差有60 °C。參考熱差分分析之數據,含有Zn成分 者,其結晶化溫度成低25~10(TC。 -35- ϋ張尺度適用中國國家標準(CNS)A4規格(210 X 297 ^*7 (請先閱讀背面之注意事項再填寫本頁)
486452 A7 B7 五、發明說明(34 )
鐮41骧® X %¥_/_峭煺 sllw snlg铢 目 (S.6寸)OJ卜·05 (une.9e)ooooo-e (6°°.9cn) 6οο·9£ (SI) SI (ee/ze)cnRe (請先閱讀背面之注意事項再填寫本頁) m m 鐮 4lsitex 承__/_蝇煺 1.0oso.o awls® ias (_lnsignlsaga: M 5# »<# (9wn)(es) o) § (s
S6 OH Ivo卜 ozcn 9L (寸 rCN寸) 6rJ^ I (vnln.卜寸) 9Γη·6ς (oooo.wn寸) 寸寸·s (9Γνη寸) 卜寸一 (9°.寸 I) 90.寸 I (vocnrCN) (vocnCNCN· 一-口、.
m ez.6ed 69 卜cnosleo* 900000 0 經濟部智慧財產局員工消費合作社印製 Μ 邻駄)lng§!3:¥^
Ingiiis:遽 (l寸寸) PS (06) o) o)mtt OU I 6CNII 9111 9寸e νης nig¾ <哉
(CSI 寸)卜 SI φοζχ 30001 ^orgxpos Φ0Ζ:ΧΡ006 ΦΟΓ^Χ cus ^ocsxpolooo φο^χ ocos φοζχροΓηοο ^ocsxpgoo 36 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 486452 A7 B7 五、發明說明(5) 實施例2 和實施例1 一樣的,調製由Ca〇:15重量% ; Al2〇3 ·· 19 重量 % ; Si02 : 42 重量 % ; B2〇3 : 12 重量 % ; ZnO : 12 重 量%所組成的非結晶質玻璃。保持在80(TC、850°C、875 °C、900°C、950°C及100(TC之各個溫度下20分鐘,調查析 出結晶量。 結果’在80(TC加熱之物並不變成結晶化(第14圖), 但在850°C時可確認開始析出鈣長石結晶(第15圖),在875 °C時鈣長石結晶進而結晶化(第16圖),在90(rc時結晶化終 了(第17圖)。而且,以熱差分分析(以昇溫速度爲20°C /分 鐘來加熱)本實施例之結晶化玻璃,其結晶化點爲998°C。 另一方面,在900°C前可確認不會析出鋅尖長石結晶, 而在950°C時有少量析出(第18圖),在1000°C時並不進一 步結晶化(第19圖)。 在1000°C加熱後之結晶化玻璃之結晶量,用已敘述之 方法來求出,其係爲50.89重量%。其中,灰長石結晶爲 49.07重量%,而鋅尖長石爲1.82重量%,其餘的爲非結晶 質之玻璃基材。又,在850 °C加熱後之結晶化玻璃之結晶 量,用已敘述之方法來求出,其係爲3.73重量%。其中, 全部爲灰長石結晶,而殘餘的係非結晶質之玻璃基材。 非結晶質部分之組成係具50.89重量%之結晶量之結晶 化玻璃,其中Ca〇:5.11重量% ; Si〇2 : 20.81重量% ; BAs : 12重量% ; ZnO : 11.19重量% ;而具有3.733重量% 之結晶量之結晶化玻璃,其中CaO : 14.25重量% ; Al2〇3 : -37- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) --------訂---------
經濟部智慧財產局員工消費合作社印製 486452 A7 B7 五、發明說明() 17.63 重量 % ; Si〇2 : 40.40 重量 % ; b2〇3 : 12 重量 % ; Zn〇: 12重量%。 第13~19圖爲在各加熱溫度下之粉末X射線繞射圖, 其X射線強度及量則示於表1中。 與實施例1相同的,前記非結晶質玻璃之在900°C所 形成之結晶化玻璃之成形體,其介電係數及直流電阻之測 定結果,其介電係數在1 GHz下爲6.5,在3GHz爲6.7和在 10GHz爲6.6,其係比氮化鋁燒結體者小。直流電阻之測定 結果爲具7.7X1015 Ω ·公分之高電氣絕緣性。又且,在 100〜300°C之熱膨脹係數爲4.5xlO_6/°C。在100~500°C之熱膨 脹係數爲4.9xl(T6/°C。 其次,以實施例1相同地來調查氮化鋁燒結體之接合 性。在大氣中或N2氛圍氣中燒成品,其結果,冷卻後結晶 化玻璃與氮化鋁燒結體亦會緊密地接合,而沒有見到裂 縫、剝離。又,以相同的條件,返覆操作4次後,則發生 不完全的接合。在N2氛圍氣中燒成試樣中之結晶化玻璃, 係具黑色化傾向或見不到腫脹•發泡現象。燒成後,玻璃 層厚40微米。 又,用上述之非結晶質玻璃,以由含有Pt粉末之 Ag/Pt系粉末所做成之金屬膏糊(京都艾雷庫斯公司製)來做 爲固形分,與實施例1同樣地做成接合體,並進行90°垂 直張力試驗。該金屬部分之10個測定結果,其平均値爲 54MPa,又,最小値爲26MPa,最大値爲74MPa。依據此強 度試驗,可見到破壞模數強度低之金屬銅部分被破壞了。 -38- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------
經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 486452 A7 B7______ 37 五、發明說明() 雖然,強度高的物質,如結晶化玻璃之內部或氮化鋁燒結 體之內部也被破壞了,但是在所有的測定中’結晶化玻璃 及氮化鋁燒結體之界面附近並不被破壞,由此可確定該結 晶化玻璃和氮化鋁燒結體之接合性,乃是強固的。 參考例2 爲知道玻璃中Pb成分量之影響,乃製造由CaO ·· 15重 量% ; A12〇3 : 24重量% ; Si〇2 : 42重量% ; BAs : 7.6重量 % ; Zn〇:11重量% ; PbO ·· 0.4重量%所組成的非結晶質玻 璃;以及由 CaO : 13 重量 % ; A1203 : 21 重量 % ; Si02 : 38 重量% ; B2〇3 ·· 7.1重量% ; Zn〇:10重量% ; Pb〇:10.9重 量%所組成的非結晶質玻璃。與實施例1同樣地方法,使 接合成氮化鋁燒結體。 其結果,雖然含有PbO : 0.4重量%之玻璃可毫無問題 地與氮化鋁燒結體接合;但是含有PbO : 10.9重量%之玻璃 則會發生多量腫脹發泡,以鑷子接觸,則結晶化玻璃與氮 化鋁燒結體接之接合部分,會容易地剝離。 參考例3 爲知道玻璃中Ti成分量及Ζι:成分量之影響,乃製造 由 CaO : 19 重量 % ; Al2〇3 : 20 重量% ; Si〇2 ·· 32 重量 % ; B2〇3 : 9重量% ; Ti〇2 : 20重量% ;所組成的非結晶質玻 璃;以及由Ca〇:19重量% ; ΑΙΑ] : 11重量% ; Si〇2 : 27 重量 % ; B203 : 8 重量 % ; Zr 02 ·· 10 重量 % ; Ti02 ·· 25 重量 % 所組成的非結晶質玻璃。使此玻璃在900°C下加熱20分 鐘’而製造成結晶化玻璃。則該含有20重量%之Ti02之玻 -39- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 裝--------訂--------- 經濟部智慧財產局員工消費合作社印製 486452 A7 _B7_ v 38 五、發明說明() 璃之熱膨脹係數爲SAxHTYC ;而含有Ti02+ Zr 02爲35重 量%之玻璃之熱膨脹係數爲6.2xl(T6/°C ;均較氮化鋁燒結體 之熱膨脹係數4.5xl(T6/°C來得高。 實施例3 於40X45X0.635毫米之氮化鋁燒結體基板(托庫夕馬公 司製,商品名爲SH30)上,開出貫穿基板表裡之直徑爲0.4 毫米之貫穿孔。 用市售之金屬銅膏糊(京都艾雷庫斯公司製,商品名爲 DD3200B)來調整其α-萜品醇整黏滯度,將之塗佈於上述之 貫穿孔並乾燥之。之後,此貫穿孔和在其所形成的導體, 依照第20圖,係與氮化鋁燒結體基板2上所形成的導通通 孔6相當。更且,在基板上下面,以網版印刷法,利用不 調整黏滯度之膏糊來塗布預定之電氣電路,乾燥之。該電 氣電路,依照第20圖,係與氮化鋁燒結體基板2上之配線 導體3相當。將該已印刷導體膏糊之氮化鋁燒結體基板, 於在Ν2氛圍氣中將玻璃膏糊乾燥,於900°C下20分鐘使之 燒成。 燒成後之氮化鋁燒結體之表面上之銅導體,其厚度爲 13微米。用實施例1之製作方法,以網版印刷法,將金屬 膏糊塗佈於該燒成之基板表面上,乾燥並在N2氛圍氣中, 於900°C下20分鐘使之燒成。更且,以網版印刷法,將同 圖樣的玻璃膏糊塗佈於燒成後之玻璃上,並乾燥之。在之 上以Cu膏糊印刷預定之電氣電路,並乾燥之。之後,在& 氛圍氣中將玻璃膏糊乾燥,於900°C下20分鐘使之燒成。 -40- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁)
V 486452 A7 B7 經濟部智慧財產局員工消費合作社印製 39五、發明說明() 經2次塗佈之玻璃層,在燒後之厚度爲40微米。又,在印 刷玻璃膏糊之操作中而於預定位置上形成空洞時,藉由於 空洞中埋入燒成之Cu膏糊,而形成導通玻璃之通孔。返覆 地操作,則可得到如第20圖所示之形成3層玻璃層之電路 基板。 如有必要,則在此電路基板上對應於Cu導體部分,施 做頂面玻璃4或鍍Au。之後,半導體晶片5,係藉由安裝 配線點,來使得半導體晶片與電路基板電氣接續。又且, 可適當地安裝必要的冷凝器、絕緣體等之晶片組件7。 實施例4 除了燒成時間爲10分鐘以外,以和實施例3同方法, 來印刷導體膏糊、乾燥、燒成氮化鋁燒結體之基板。 以網版印刷法,塗佈用參考例1之非結晶質玻璃所製 作之玻璃膏糊,乾燥之並在N2氛圍氣中,於900°C下20分 鐘使之燒成。燒成後,以網版印刷法,將同圖樣的玻璃膏 糊塗佈於燒成後之玻璃上,並乾燥之。在之上以Cu膏糊印 刷預定之電氣電路,並乾燥之。之後,在N2氛圍氣中將玻 璃膏糊乾燥,於900°C下20分鐘使之燒成。經2次塗佈之 玻璃層,在燒後之厚度爲40微米。又,在印刷玻璃膏糊之 操作中而於預定位置上形成空洞時,藉由於空洞中埋入燒 成之Cu膏糊,而形成導通玻璃之通孔。返覆同樣地操作, 則可得到如第20圖所示之形成3層玻璃層之電路基板。 元件符號對照表 1…結晶化玻璃 -41 - (請先閱讀背面之注意事項再填寫本頁) 裝 .
本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) 486452 A7 B7 五、發明說明( 40 2…氮化鋁燒結體 3…配線導體 4…頂面玻璃 5…半導體晶片 6…導通用孔 7…晶片組件 經濟部智慧財產局員工消費合作社印製 -42 (請先閱讀背面之注意事項再填寫本頁)
本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)
Claims (1)
- 486452經濟部智慧財產局員工消費合作社印制π ι·一種接合體,其係將由結晶質部分和非結晶質部分所成之 結晶化玻璃,與氮化鋁燒結體予以燒結而成, 該結晶質部分係以利用CuKa射線之粉末X射線繞射而 在20 =27.6°〜28.2°時具最強的射線之結晶爲主而成; 在該結晶化玻璃組成分中,係含有換算成氧化物計係爲 0.5〜30重量%之Zn成分;而且其中Ti成分和Zr成分, 換算成氧化物計係在10重量%以下;而Pb成分換算成氧 化物計係在5重量%以下。 2. 如申請專利範圍第1項之接合體,其係由具以下各組成分 (換算成氧化物計)之結晶化玻璃所成, Ca〇·· 545重量% ; Al2〇3 : 15〜40重量% ; Si02 : 25〜60 重量 % ; Zn〇:0.5〜30重量% ; B2〇3 : 0.05〜20重量% ; Ti02 : 0〜5重量% ; Pb〇:0〜5重量% ; 其他金屬氧化物:5〜25重量% ; (惟,上記該各組成分合計爲100重量%)。 3. 如申請專利範圍第1項之接合體,其係由具以下各組成分 (換算成氧化物計)之結晶化玻璃所成, Ca〇:8~25重量% ; Al2〇3 : 15〜35重量% ; Si〇2 : 33〜55重量% ; -43- 尺度適用中國國家標準(CNS)A4規格(2]0 X 297公釐) fr, . - W II ---------------^--------- (請先閱讀背面之注意事項再填寫本頁) ^«6452 A8 B8 C8 D8 A、申請專利範圍 Zn〇:0.5〜25重量% ; B2〇3 : 0.05〜18 重量 % ; (惟,上記該各組成分合計爲100重量%)。 4.如申請專利範圍第丨〜3項中之任一項之接合體,其利用 CuKa射線之粉末X射線繞射而在20 =27.6°〜28.2。時具 最強的射線之結晶,係爲鈣最石結晶。 5·如申請專利範圍第^3項中之任一項之接合體,其在結晶 化玻璃之結晶質部分所含有之結晶,係包括利用CuK α *射線之粉末X射線繞射,在20 =27.6° ~28.2°時具最強 的射線之結晶;以及利用CuK α射線之粉末X射線繞 射,在20 =36.6°〜37.0°時具最強的射線之結晶。 6. 如申請專利範圍第5項之接合體,其在結晶化玻璃之結晶 質部分所含有之結晶,係包括利用CuKa射線之粉末X 射線繞射,在2 0 =27.6°〜28.2°時具最強的射線之結 晶,係爲鈣長石結晶;而利用CuKa射線之粉末X射線 繞射,在20 =36.6°〜37.0°時具最強的射線之結晶,係 爲鋅尖長石結晶。 一-·— ^— 7. —種由接合體而成之電氣電路用基板,該接合體係將由結 晶質部分和非結晶質部分所成之結晶化玻璃,與氮化鋁 燒結體予以燒結而成, 該結晶質部分係以利用CuKa射線之粉末X射線繞射而 在20 =27.6°〜28.2°時具最強的射線之結晶爲主而成; 在該結晶化玻璃組成分中,係含有換算成氧化物計係爲 0.5〜30重量%之Zn成分;而且其中Ti成分和Zr成分, -44- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) 1 - 1 -裝--------訂--------- 經濟部智慧財產局員工消費合作社印制衣 486452 A8 B8 C8 __._ D8 六、申請專利範圍 換算成氧化物計係在10重量%以下;而Pb成分換算成氧 化物計係在5重量%以下。 8.—種電氣電路用基板,其係在如申請專利範圍第1〜6項中 任一項接合體之結晶化玻璃之表面或內部,或者是在氮 化鋁表面上,至少形成任何的電氣電路。 9·一種結晶化玻璃與氮化鋁繞結體之接合體之製造方法,其 特徵在於:在氮化鋁燒結體上形成玻璃層,藉由在該非 結晶質玻璃之軟化點以上加熱,來接合玻璃層和氮化鋁 燒結體;而且藉由加熱將玻璃中利用CuK α射線之粉末 X射線繞射,在20 =27.6°〜28.2°時具最強的射線之結 晶予以析出; 其中該玻璃層係含有換算成氧化物計係爲0.5〜30重量% 之Ζη成分;而且Ti成分和Zr成分,換算成氧化物計係 在10重量%以下;而Pb成分換算成氧化物計係在5重量 %以下的組成之實質上非結晶質之玻璃。 10.如申請專利範圍第9項之製造方法,其中非結晶質玻璃 係由具以下各組成分(換算成氧化物計)所成, Ca〇·· 5〜25重量% ; A1203 ·· 15〜40 重量 % ; Si〇2 : 25~60 重量 % ; Zn〇:0.5〜30重量% ; B2〇3 ·· 0.05〜20 重量 % ; Ti〇2 : 0~5重量% ; Pb〇:0〜5重量% ; -45- 本紙張尺度刺巾關家標準(CNS)A4規格(21G x 297公' - (請先閱讀背面之注意事項再填寫本頁) --------訂 ---------· 經濟部智慧財產局員工消費合作社印制衣 _〇州2 經濟部智慧財產局員工消費合作社印制衣 A8 B8 C8 D8 〃'申請專利範圍 其他金屬氧化物:5~25重量%; (惟,上記該各組成分合計爲100重量%)。 U·如申請專利範圍第9項之製造方法,其中非結晶質玻璃 係爲具以下各組成分(換算成氣化物計)所成之玻璃, Ca〇:8〜25重量% ; Al2〇3 : 15〜35重量% ; Si〇2 : 33〜55重量% ; Zn〇:0.5〜25重量% ; B2〇3 : 0.05〜18 重量 % ; (惟,上記該各組成分合計爲100重量%)。 12·如申請專利範圍第9〜11項中之任一項之製造方法,其 中所析出之結晶係爲利用CuKa射線之粉末X射線繞 射,在20=27.6°〜28.2°時具最強的射線之結晶;以 及利用CuKa射線之粉末X射線繞射,在2Θ =36.6° 〜37.0°時具最強的射線之結晶。 U· —種經形成電氣電路之結晶化玻璃與氮化鋁繞結體之接 合體之製造方法,其特徵在於:在氮化鋁燒結體上形 成玻璃層,並且藉由加熱可形成之物質,在該玻璃層 上及/或氮化鋁燒結體上形成之後,藉由以600〜1100°C 之溫度來加熱,而使玻璃層、氮化鋁燒結體、電氣電 路層之各層相互接合,而且使在玻璃層中之該結晶析 出結晶化玻璃; 其中該玻璃層係利用CuKa射線之粉末X射線繞射, 在20=27.6°〜28.2°時具最強的射線之可藉由加熱而 -46- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) It I --------^--------- (請先閱讀背面之注意事項再填寫本頁) 486452 A8 B8 C8 D8 六、申請專利範圍 析出之結晶;以及其中Ti成分和Zr成分,換算成氧 化物計係在10重量%以下;而Pb成分換算成氧化物計 係在5重量%以下的組成之實質上非結晶質之玻璃。 14. 如申請專利範圍第13項之製造方法,其中在加熱之際 會析出利用CuK α射線之粉末X射線繞射,在2 0 = 27.6°〜28.2°時具最強的射線之結晶;以及利用CuK α射線之粉末X射線繞射,在20 =36.6°〜37.0°時具 最強的射線之結晶。 15. 如申請專利範圍第13或14項之製造方法,其中加熱溫 度爲800〜970°C。 16. —種結晶化玻璃,其特徵在於:該結晶化玻璃係由結晶 質部分和非結晶質部分所成,該結晶質部分係由利用 CuKa射線之粉末X射線繞射而在20=27.6°〜28.2° 時具最強的射線之結晶所成,該結晶化玻璃係由以下 各組成分(換算成氧化物計)所成: Ca〇:8〜25重量% ; Al2〇3 : 15〜35重量% ; Si〇2 : 33〜55重量% ; Zn〇:0.5〜25重量% ; B2〇3 : 0.05〜18重量% ; (惟,上記該各組成分合計爲100重量%)。 17·如申請專利範圍第16項之結晶化玻璃,其中結晶質部 分係進一步包括利用CuKa射線之粉末X射線繞射, 在20 =36.6°〜37.0°時具最強的射線之結晶。 -47- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) r 訂------- 經濟部智慧財產局員工消費合作社印製 486452 A8 B8 C8 D8 六、申請專利範圍 18. —種結晶化玻璃基板,其係在如申請專利範圍第16或 17項之結晶化玻璃之表面及/或內部形成電氣電路。 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印制农 -48- 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP35778699 | 1999-12-16 | ||
JP36151399 | 1999-12-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW486452B true TW486452B (en) | 2002-05-11 |
Family
ID=26580668
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW089126978A TW486452B (en) | 1999-12-16 | 2000-12-16 | Joining body of crystalized glass and nitrogen oxide sintering body, and the preparation thereof |
Country Status (6)
Country | Link |
---|---|
US (1) | US6818574B2 (zh) |
EP (1) | EP1293492A1 (zh) |
JP (1) | JPWO2001044143A1 (zh) |
KR (1) | KR20020062308A (zh) |
TW (1) | TW486452B (zh) |
WO (1) | WO2001044143A1 (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116768631A (zh) * | 2022-03-17 | 2023-09-19 | 日本碍子株式会社 | 高电阻高耐腐蚀陶瓷材料及晶片载放台 |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050268656A1 (en) * | 2001-01-08 | 2005-12-08 | Alexander Raichel | Poly-crystalline compositions |
US7284469B2 (en) * | 2001-01-08 | 2007-10-23 | Glasscerax Ltd. | Protection from kinetic threats using glass-ceramic material |
US20080131673A1 (en) * | 2005-12-13 | 2008-06-05 | Yasuyuki Yamamoto | Method for Producing Metallized Ceramic Substrate |
WO2007144875A1 (en) * | 2006-06-13 | 2007-12-21 | D&D Salomon Investment Ltd. | Glass-ceramic materials having a predominant spinel-group crystal phase |
JP4908964B2 (ja) * | 2006-07-28 | 2012-04-04 | 信越石英株式会社 | セラミックス治具の製造方法 |
US20080318061A1 (en) * | 2007-06-20 | 2008-12-25 | Akira Inaba | Insulation paste for a metal core substrate and electronic device |
US20090100872A1 (en) * | 2007-10-17 | 2009-04-23 | Daniel Warren Hawtof | Method for laminating glass, glass-ceramic, or ceramic layers |
JP5064202B2 (ja) * | 2007-12-25 | 2012-10-31 | パナソニック株式会社 | 立体回路基板用窒化アルミニウム系基材の製造方法、及び立体回路基板 |
WO2014004079A1 (en) * | 2012-06-29 | 2014-01-03 | Corning Incorporated | Glass-ceramic substrates for semiconductor processing |
CN109928616A (zh) * | 2017-12-15 | 2019-06-25 | 成都光明光电股份有限公司 | 玻璃组合物 |
CN108424133B (zh) * | 2018-04-16 | 2021-03-26 | 河南工业大学 | 一种堇青石/氮化铝电子封装陶瓷基片及制备方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4526873A (en) * | 1984-07-02 | 1985-07-02 | Corning Glass Works | Transparent, mullite glass-ceramics containing ZnO and method |
JPS6287435A (ja) * | 1985-10-14 | 1987-04-21 | Sasaki Glass Kk | 天然石様結晶化ガラス物品 |
US4714687A (en) * | 1986-10-27 | 1987-12-22 | Corning Glass Works | Glass-ceramics suitable for dielectric substrates |
JPH0768065B2 (ja) * | 1987-09-18 | 1995-07-26 | 日本電気硝子株式会社 | ガラス被覆窒化アルミニウム焼結体およびその製法 |
JP2952303B2 (ja) * | 1988-11-15 | 1999-09-27 | 旭テクノグラス株式会社 | 複合型回路装置 |
JPH06340443A (ja) * | 1993-05-28 | 1994-12-13 | Asahi Glass Co Ltd | ガラス組成物及びガラス被覆窒化アルミニウム焼結体 |
JPH0816021B2 (ja) * | 1993-06-10 | 1996-02-21 | 日本電気株式会社 | 多層ガラスセラミック基板およびその製造方法 |
JPH0715135A (ja) * | 1993-06-24 | 1995-01-17 | Mitsubishi Materials Corp | 回路基板及びその製造方法 |
JP2624149B2 (ja) | 1993-11-09 | 1997-06-25 | 住友金属鉱山株式会社 | 低温焼成ガラスセラミック基板用組成物 |
JP3101967B2 (ja) | 1995-04-27 | 2000-10-23 | 京セラ株式会社 | ガラス−セラミック焼結体およびその製造方法 |
JP3101971B2 (ja) | 1995-06-30 | 2000-10-23 | 京セラ株式会社 | ガラス−セラミック焼結体およびその製造方法 |
JPH09100183A (ja) * | 1995-10-06 | 1997-04-15 | Mitsubishi Materials Corp | 厚膜グレーズド基板及びその製造方法 |
JP2000159543A (ja) | 1998-09-22 | 2000-06-13 | Ohara Inc | 蓄光性蛍光ガラスおよびガラスセラミックス |
JP2001270788A (ja) * | 2000-03-28 | 2001-10-02 | Ngk Insulators Ltd | 窒化アルミニウム焼結体 |
-
2000
- 2000-12-14 EP EP00981727A patent/EP1293492A1/en not_active Withdrawn
- 2000-12-14 WO PCT/JP2000/008869 patent/WO2001044143A1/ja not_active Application Discontinuation
- 2000-12-14 KR KR1020027006690A patent/KR20020062308A/ko not_active Application Discontinuation
- 2000-12-14 JP JP2001545233A patent/JPWO2001044143A1/ja active Pending
- 2000-12-14 US US10/149,600 patent/US6818574B2/en not_active Expired - Fee Related
- 2000-12-16 TW TW089126978A patent/TW486452B/zh not_active IP Right Cessation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN116768631A (zh) * | 2022-03-17 | 2023-09-19 | 日本碍子株式会社 | 高电阻高耐腐蚀陶瓷材料及晶片载放台 |
Also Published As
Publication number | Publication date |
---|---|
WO2001044143A1 (fr) | 2001-06-21 |
EP1293492A1 (en) | 2003-03-19 |
EP1293492A8 (en) | 2004-05-12 |
KR20020062308A (ko) | 2002-07-25 |
JPWO2001044143A1 (ja) | 2004-01-08 |
US20020193229A1 (en) | 2002-12-19 |
US6818574B2 (en) | 2004-11-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP3358589B2 (ja) | セラミック基板用組成物、グリーンシートおよびセラミック回路部品 | |
KR900006122B1 (ko) | 질화알루미늄 소결체 및 그 제조방법 | |
EP0163155B1 (en) | Low temperature fired ceramics | |
TW486452B (en) | Joining body of crystalized glass and nitrogen oxide sintering body, and the preparation thereof | |
US4761345A (en) | Aluminum nitride substrate | |
JP2002226259A (ja) | セラミック電子部品の基体用組成物、セラミック電子部品および積層型セラミック電子部品の製造方法 | |
JP3528037B2 (ja) | ガラスセラミック基板の製造方法 | |
JPH01501465A (ja) | 純粋なアルミナと共に焼結するのに用いられるタングステンペーストおよびその製造方法 | |
JPS60255661A (ja) | シルク―スクリーニングインク | |
US6329065B1 (en) | Wire board and method of producing the same | |
EP1744327A1 (en) | High thermal cycle conductor system | |
JPH0727995B2 (ja) | セラミック配線基板 | |
JPH11514627A (ja) | 多層共焼成セラミック組成物およびセラミックオンメタル回路基板 | |
JP2001294489A (ja) | 結晶化ガラスと窒化アルミニウム焼結体との接合体 | |
JP4358480B2 (ja) | 誘電体磁器 | |
JP2004075534A (ja) | 絶縁性組成物 | |
JP2580439B2 (ja) | 高誘電率アルミナ質焼結体およびその製造方法 | |
JPH06199541A (ja) | ガラスセラミックス組成物 | |
JPH0360443A (ja) | 低温焼成ガラスセラミック体 | |
JPS62197372A (ja) | 導電性メタライズ層を有する窒化アルミニウム焼結体の製造方法 | |
WO2021221174A1 (ja) | 厚膜抵抗ペースト、厚膜抵抗体、及び電子部品 | |
JP2704159B2 (ja) | 導電性メタライズ層を有する窒化アルミニウム焼結体およびその製造方法 | |
JP3101966B2 (ja) | 高熱膨張Al2O3−SiO2系焼結体およびその製造方法 | |
JP4358479B2 (ja) | 誘電体磁器 | |
JPH03116608A (ja) | 導体ペーストおよび導体 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |