TW480635B - Gold wire for semiconductor element bonding - Google Patents

Gold wire for semiconductor element bonding Download PDF

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Publication number
TW480635B
TW480635B TW090104260A TW90104260A TW480635B TW 480635 B TW480635 B TW 480635B TW 090104260 A TW090104260 A TW 090104260A TW 90104260 A TW90104260 A TW 90104260A TW 480635 B TW480635 B TW 480635B
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Taiwan
Prior art keywords
mass ratio
ppm
mass
wire
gold
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Application number
TW090104260A
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English (en)
Inventor
Ichimitsu Itabashi
Shin Takaura
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Tanaka Electronics Ind
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Publication of TW480635B publication Critical patent/TW480635B/zh

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Description

480635 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明（1 ). 發明背景 1·發明領域 本發明係有關一種接合半導體元件用之金質導線，其 用於半導體元件之電極與外部引線間之電連結，特別本發明 係有關一種即使用於外部引線側之加壓接合時仍可滿意地使 用、於需要時可藉低壓接合達成半導體元件之接合用之金質導線。 2·相關技術說明 封裝半導體裝置時，半導體元件電極與外部引線間之 互連或接合目前係藉基於廣為人使用的使用金質導線之「球 接3」方法藉佈線方法形成互連或接合。此種方法通常涉及 藉熱壓接合或超音波輔助熱壓接合作為加壓接合至半導體元 件電極之手段而形成佈線。 第1A-1D圖顯示用於互連及回路形成之超音波輔助熱壓 接合，其中1為毛細管，2為金質導線，3為炬電極，4為金屬 球，5為紹電極，6為半導體元件，7為夾具以及8為引線。 晚近半導體裝置之製法中，’於回路形成過程期間，球 頸部係於回路形成方向之反向強迫彎曲俾穩定前述回路形狀 而變形之，然後實際形成最終回路，如此藉「逆變形」而形 成回路。夕種半導體裝置由於受操作電路或外部環境加熱 使用時暴路於*溫下。因此尋求藉此方式藉逆變形而形成㈡ 路之後，即使暴露於苛刻的熱週期環境下仍可讓導線斷裂減 至最低。 本專利公開案平第8-3 16262號、日本專利公開案平第 而 回 (請先閱讀背面之注意事項再填寫本頁) 訂
480635 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（2 ) 9-36162號及日本專利公開案平第11-214425號中，本案申請 人已經揭示經由使用具有規定組成之金質導線作為回路形成 之金質導線可獲得前述預定效果。 雖然此專&議&供暴露於熱週期環境時減少導線斷裂 的結果，但近年來使用環境逐漸變苛刻，結果導致要求互連 線或接線即使暴露於更苛刻的熱週期環境下仍可忍受導線不 會斷裂。此外，前述各公開案中增加元件量來增加防止導線 斷裂發現可能造成電阻增大的缺點。此外，於操作長的回路 時須維持回路鬲度面，隨著接腳數目的增加近來已經採用於 高回路。 於第1A-1D圖之第二側接面（後文也稱做引線8側接面）， 南壓接合可能導致失誤例如高回路形狀塌陷，因此需要使用 低壓接合。但低壓接合造成接面強度低的問題。因此高回路 佈線之預定目的係改良接面強度，即使於第二側接面使用低 壓接合時亦如此，同時維持高回路形狀。發明人嘗試製造可 滿足此等性質的金質導線，但抗拉強度不足。 鑑於先前技術之此等情況，提供一種半導體元件接合 用之金質導線而達成本發明之一目的，其中元素添加總量係 不大於1 OOppm質量比俾維持低電阻，首先，允許逆變形俾 於回路形成後即使暴露於苛刻的熱週期環境下仍可讓導線斷 裂減至最低；第二，允許於規定高度形成高回路；第三，即 使於第二側接面藉低壓接合仍可維持接面強度高於規定值俾 維持高回路形狀；以及第四，也允許維持高抗拉強度。 發明概述 本紙張尺度朗中國國家標準（CNS ) A4規格（21()χ297公楚） ---------批衣------II------0 (請先閱讀背面之注意事項再填寫本頁) 480635 A7 B7 五、發明説明（3 ) 為了達成前述目的，本發明提供一種接合半導體元件 用之金質導線，其包含ll-20ppm質量比銀，i_9ppm質量比 鉑，l-15ppm質量比釔，l-15ppm質量比鑭及i-i5ppm質量比 銪，帶有l-20ppm質量比鈣及l-10ppm質量比皱之任一者或 二者，前述各元素之總量係不大於lOOppm質量比，差額為 金及無法避免的雜質。 也提供使用前述金質導線做半導體元件與引線之接線 之方法。 圖式之簡單說明 第1A至1D圖為一組說明圖，顯示使用金質導線藉超音 波輔助半導體元件電極與外部引線間的熱壓接合之方法。 發明之具體實施例 ⑴組成 a) 原料金 使用之原料金較佳為已經純化至至少99.99%重量比之 高純度金。純度更佳至少99.995%重量比以及最佳至少 99.999%重量比。以較高純度金為較佳，原因在於其可將有 害組分的影響減至最低。 b) [銀] 當用於本發明之金質合金引線含有規定量之鉑、釔、 鑭、銪及鈣或鈹時，前述目的可以n _20ppm質量比銀含量 達成。 不似銀含量低於1 lppm質量比，如此即使於熱週期測試 後仍可改良抗斷裂強度且允許維持高抗拉強度。不似銀含量 本紙張尺度適用中國國家標準（CNS ) A4規格（21〇χ297公釐） (請先閱讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局員工消費合作社印製 480635 A7 B7 經濟部智慧財產局R工消費合作社印製 五、發明説明（4 ) · 大於20ppm質量比時，如此也大為改良低壓接合時之第二側 抗撕強度’同時也允許維持高抗拉強度。因此於規定量之始 專存在時’銀含量限於11 -2Oppm質量比。 c) [始] 當用於本發明之合金金質導線含有規定量之銀、釔、 鑭、銪及#5或鈹時，前述目的可以l_9ppm質量比鉑含量達 成。 不似當链含量低於1 ppm質量比時，如此改良熱週期測 試後之抗斷裂強度且允許維持高抗拉強度。不似鉑含量大於 9ppm質量比時，如此也大為改良低壓接合時之第二側抗撕 強度，同時也允許維持高抗拉強度。因此當有規定量之銀等 存在時’齡含量限於1 ·9ρρπι質量比。 d) [紀] 當用於本發明之合金金質導線含有規定量之銀、鉑、 鑭、銪及鈣或鈹時，前述目的可以卜15ppm質量比釔含量達 成。 不似當釔含量低於lppm質量比時，如此改良熱週期測 試後之抗斷裂強度也允許維持高抗拉強度。不似釔含量大於 15ppm質量比時，如此也允許回路高度增高，同時大為改良 低壓接合時的第二側抗撕強度。 當於規定量之銀等存在時，因而釔含量係限於l-15ppm 質量比。 e) [鑭] 當用於本發明之合金金質導線含有規定量之銀、鉑、 本紙張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐） (請先閲讀背面之注意事項再填寫本頁) •裝
、1T 線 480635 經濟部智慧財產局員工消費合作社印製 A7 _____B7_ 五、發明説明（5 ) 在乙、銪及妈或鈹時，前述目的可以1-15ppm質量比鋼含量達 成。 不似鑭含量低於lppm質量比時，如此改良熱週期測試 後之抗斷裂強度且允許維持高抗拉強度。不似鑭含量大於 15ppm質量比時，如此也允許回路高度增高，同時大為改良 低壓接合時的第二側抗撕強度以及允許維持高抗拉強度。 因此於規定量之銀等存在時，鑭含量係限於1_15沖〇1質 量比。 f) [銪] 當用於本發明之合金金質導線含有規定量之銀、鉑、 在乙、鑭及鈣或鈹時，前述目的可以質量比銪含量達 成。 不似銪含量低於lppm質量比時，如此改良熱週期測試 後之抗斷裂強度且允許維持高抗拉強度。不似銪含量大於 15ppm質量比時，如此也允許回路高度增高，同時大為改良 低壓接合時的第二側抗撕強度以及允許維持高抗拉強度。 因此於規疋篁之銀專存在時，銪含量係限於1·1 質 量比。 g) [鈣、鈹] 當用於本發明之合金金質導線含有規定量之銀、鉑、 纪、鋼及銪時，前述目的可以鈣含量K2〇ppm質量比及鈹含 量l-10ppm質量比中之任一者或二者達成。 不似當#5及鈹含量低於lpprn質量比時，如此改良熱週 期測試後之抗斷裂強度且允許維持高抗拉強度。不似當鈣含 本紙張尺度適用中國國家標準（CNS ) Μϋ^1〇'χ297&4 -- (請先閱讀背面之注意事項再填寫本頁) 480635 經濟部智慧財產局崑工消費合作社印製 A7 B7 五、發明説明（6 ) 量大於20ppm質量比或鈹含量大於i〇ppm質量比時，如此也 允许回路南度增南，同時大為改良低壓接合時的第二側抗撕 強度以及允許維持高抗拉強度。 因此當有規定量之銀等存在時，鈣含量及鈹含量之任 一者或二者分別係限K1_2〇ppm質量比及1_10ppmf量比。 (2) 金質導線製法 現在說明製造用於本發明之半導體元件之金質導線之 方法實例。於首先熔化具有規定組成之金屬且澆鑄成為鑄錠 之後，使用凹槽型滾軋機滾軋，然後使用中間退火，最終藉 冷加工製成直徑1(M00微米之細導線，隨後接受最終退火， 因而導線具有伸長率4-6%，以及導線表面塗覆以潤滑防鏽 劑。然後完全加工後的導線於規定張力下再度以外直徑5〇 3 毫米之捲軸捲曲至規定長度而準備終製品。使用的規定的長 度為100-3000米，但常見甚至更長長度。 (3) 用途 本發明之金質導線係用於半導體元件電極與外部引線 間的接合，接合方法通常為根據球接合法之接線及互連如 第1A-1D圖所示。較佳用於所謂的「高回路」，其中如第⑴ 圖所示導線2,為高。現在參照第以請圖說明藉球接合方 法接合之方法。 如第1A圖所示，金f導線2穿過毛細管卜電炬3係位在 導線2梢端對側且形成放電到達金質導線2，如此加熱金質導 線2梢端且熔化導線而形成球4。 其次如第1B圖所示，毛细普】 七、、、田& 1下降用於加壓接合至半導 本紙張尺度適用中國國家標準（CNS ) A4規 ---------裝 訂 線 (請先閲讀背面之注意事項再填寫本頁) 9 480635 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（7 ) 體元件6上的鋁電極5。此處，超音波振動（圖中未顯示）於半 導體元件6使用加熱器方塊加熱時通過毛細管丨且施加於半導 體元件’故球4被熱壓接合，變成加壓接合球4，。 其次如第1C圖所示，毛細管丨遵照規定的彈道移動且下 降至外引線8。當外引線8使用加熱器方塊加熱時，超音波振 動（圖中未顯示）通過毛細管1且施加於外引線，故金質導線2 表面被熱壓接合至外引線8。 最後如第1D圖所示，夾具7升高而夾緊金質導線2，如 此切斷金質導線2且完成佈線。然後佈線剖面使用樹脂密封 而完成半導體裝置。 實例 實例1 於添加規定量之銀、鉑、紀、鋼、銪、鈣及鈹至具有 純度99.999%重量比或以上之高純度金且於真空熔爐熔化混 合物後，澆鑄而形成具有表1所示組成之金質合金鑄錠；使 用凹槽輥及線拉伸機器接受冷加工然後接受中間退火以及最 終冷加工獲得直徑25微米，於最終退火至導線伸長率4%後 ’導線表面塗覆以潤滑劑及完成金質合金導線。 (測量方法） (1) 熱週期測試後之導線斷裂 试驗材料用作為接線用於使用高速自動接線機進行超 音波熱壓接合至1C晶片電極。於使用超音波輸出〇,丨96瓦及 負載0.49牛頓進行球接合後，毛細管首先於回路形成方向之 反向移動，反向角度設定為於垂直夾角6〇度，球頸部被強迫 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公董） (請先閲讀背面之注意事項再填寫本頁}
10 480635 經濟部智慧財產局員工消費合作社印製 A7 B7 五、發明説明（8 ). ’考曲變形而形成且維持内翹曲，然後接合至外部引線而形成 常規回路（佈線）。對各個1C晶片共形成2〇〇接腳佈線。佈線 試樣使用樹脂密封然後接受2〇〇〇次最大苛刻度熱週期測試， 測試採用-55 C X 30分鐘及160°C X 30分鐘之循環。準備100個 1C晶片進行測試，藉導電試驗決定導線斷裂的存在。有導線 斷裂部之1C數目係以斷裂比率（％)顯示於表1 (2) 回路高度 前述熱週期測試係以相同方式進行，但形成佈線未做 逆變形，以及共對8個1C晶片形成接線。然後來自任一選定IC 的200條導線使用長度測量顯微鏡測量回路高度。平均值示 於表1作為回路高度。 (3) 使用低輸出接觸接合之第二側抗撕強度 進行低輸出接觸接合，以超音波輸出0157瓦（常見0.235 瓦）及負載0.392牛頓（常見0.588牛頓）作為第二側（引線側）的 加壓接合條件，如第1C圖所示。於第id圖所示之佈線形成 後’導線的中區經切斷，引線側導線梢端使用配置有接合測 試器的鑷子夾緊，測量由定錨引線舉高導線至由引線撕離需 要的負載。共測量50點，平均值示於表i作為使用低壓接合 之第二側抗撕強度。 f__例2-17，比鲂存，丨1-12 金質合金導線係以貫例1之相同方式製造及測試，但各 元素用量改成如表1及2所示。測試結果也示於表1及2。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 裝 訂 線 (請先閱讀背面之注意事項再填寫本頁) 11 480635 五、發明説明（9 ) 經濟部智慧財產局員工消費合作社印製 表1 組成（質量ppm) *測試結果 添加元素 金且 無法 避免 雜質 熱週 測試 後導 線斷 裂(％) 回路 南度 (微米) 使用低輸 出接觸接 合至第二 側抗撕強 度(毫牛頓) 抗拉 強度 (毫牛 頓） 銀 始 在乙 鑭 銪 鈣 鈹 含 量 實例 1 11 5 10 10 10 10 5 61 差額 0 187 58 131 2 15 5 10 10 10 10 5 65 差額 0 182 58 136 3 20 5 10 10 10 10 5 70 差額 0 181 52 141 4 15 1 10 10 10 10 5 61 差額 0 184 56 130 5 15 9 10 10 10 10 5 69 差額 0 186 59 139 6 15 5 1 10 10 10 5 56 差額 0 192 62 130 7 15 5 15 10 10 10 5 70 差額 0 185 55 140 8 15 5 10 1 10 10 5 56 差額 0 193 61 132 9 15 5 10 15 10 10 5 70 差額 0 188 57 142 10 15 5 10 10 1 10 5 56 差額 0 197 60 132 11 15 5 10 10 15 10 5 70 差額 0 186 54 141 12 15 5 10 10 10 1 5 56 差額 0 203 64 133 13 15 5 10 10 10 20 5 75 差額 0 170 51 144 14 15 5 10 10 10 10 1 61 差額 0 184 55 130 15 15 5 10 10 10 10 10 70 差額 0 188 57 140 16 15 5 10 10 10 10 - 60 差額 0 181 58 135 17 15 5 10 10 10 - 5 55 差額 0 186 57 134 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 12 480635
五、發明説明（1G ) 表2 組成(質量ppm) *測試結果 添加元素 金且 無法 避免 雜質 熱週 測試 後導 線斷 裂(％) 回路 向度 (微米） 使用低輸 出接觸接 合至第二 側抗撕強 度(毫牛頓) 抗拉 強度 (毫牛 頓） 銀 雀白 在乙 鑭 銪 鈣 鈹 含 量 比較 例1 - 5 10 10 10 10 5 60 差額 10 190 60 115 2 15 - 10 10 10 10 5 60 差額 43 188 57 117 3 15 5 - 10 10 10 5 55 差額 24 186 58 109 4 15 5 10 - 10 10 5 55 差額 24 188 58 111 5 15 5 10 10 - 10 5 55 差額 10 187 59 108 6 15 5 10 10 10 - 5 50 差額 30 191 60 105 7 30 5 10 10 10 10 80 差額 0 179 8 127 8 15 10 10 10 10 10 5 70 差額 0 183 12 129 9 15 5 20 10 10 10 5 75 差額 0 135 30 139 10 15 5 10 20 10 10 5 75 差額 0 138 33 145 11 15 5 10 10 20 10 5 75 差額 0 141 28 146 12 15 5 10 10 10 30 5 85 差額 0 130 19 149 13 15 5 10 10 讎 30 5 75 差額 0 131 20 140 (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 (測試結果） (1)實例1至17其中銀、鉑、釔、鑭、銪、鈣及鈹各元素 含量係於本發明之範圍者，皆為絕佳製品，於使用的嚴苛條 件下經熱週期測試後具有〇%導線斷裂率，同時具有高回路 高度170微米或以上，抗撕強度51毫牛頓或以上，即使於第 二側（引線側）使用低壓接合亦如此，以及可維持高抗拉強度 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 13 480635 A7 B7 五、發明説明（11 ) 130亳牛頓或以上。 因此本發明之構造可達成本發明之目的，提供一種半 導體元件接合用金質導線，其中元素添加總量係不大於 l〇〇ppm質量比俾維持低電阻，首先，允許逆變形俾於回路 形成後即使暴露於苛刻的熱週期環境下仍可讓導線斷裂減至 最低；第二’允許於規定高度形成高回路；第三，即使於第 二側接面藉低壓接合仍可維持接面強度高於規定值俾維持高 回路形狀；以及第四，也允許維持高抗拉強度。 (2) 至於比較例1至5，於組成15ppm質量比銀，5ppm質 量比紐，lOppm質量比釔，ι〇ρρηι質量比銪，i〇ppm質量比 鑭，lOppm質量比鈣及5ppm質量比鈹之組合物中未添加銀、 始、纪、鑭及銪中之一種元素；而對比較例6，添加銀、鉑 、紀、鑭及銪但未添加鈣及鈹；全部此等試樣於使用的嚴苛 條件下經熱週期測試後皆顯示無法接受的導線斷裂率1〇_ 43% ;以及儘管高回路高度以及使用低壓接合之改良第二側 抗撕強度，抗拉強度仍不足（僅105-1 Π毫牛頓），因此本發 明之試樣可高度地用以達成本發明之目的。 (3) 至於比較例7及8，於15ppm質量比銀，5ppm質量比 轴，lOppm質量比釔，l〇ppm質量比鑭，10ppm質量比銪，1〇ppm 質量比鈣及5ppm質量比鈹之組成中，銀含量提升至高於 20ppm質量比或鉑含量提升至高於外口爪質量比；二試樣皆顯 示高回路高度，但使用低壓接合之第二側抗撕強度為丨2毫 牛頓及抗拉強度為127-129亳牛頓，因此本發明之試樣可高 度優異地達成本發明之目的。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公楚） (請先閱讀背面之注意事項再填寫本頁) 訂 争 經濟部智慧財產局員工消費合作社印製 14 480635 Α7 Β7 五、發明説明（12 ) (4) 至於比較例9至12，於15ppm質量比銀，5ppm質量比 始，lOppm質量比釔，l〇ppm質量比鑭，10ppm質量比銪，1〇ppm 質量比鈣及5ppm質量比鈹之組成中釔含量提升至高於丨5ppm / 質量比，鑭含量提升至高於15ppm質量比，銪含量提升至高 • 於15ppm質量比或鈣含量提升至高於20ppm質量比；全部此 等試樣皆具有回路高度130-141微米及使用低壓接合之第二 側抗撕強度為19-33毫牛頓，因此本發明之試樣可高度優異 地用於達成本發明之目的。 (5) 比較例13含有15ppm質量比銀，5ppm質量比鉑，i〇ppm 質量比記，lOppm質量比鑭，30ppm質量比#5及5ppm質量比 鈹’但組成中不含銪，比較例13具有回路高度131微米及使 用低壓接合之第二側抗撕強度為20毫牛頓，因此本發明之試 樣可高度優異地用以達成本發明之目的。 (請先閱讀背面之注意事項再填寫本頁) •裝. 、訂 -線- 經濟部智慧財產局氮工消費合作社印製 15 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ297公釐）

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  1. 480635 A8 B8 C8 D8 六、申請專利範圍 1· 一種接合半導體元件用之金質導線，其包含ll-20ppm 質量比銀，l-9ppm質量比鉑，卜15ppm質量比紀，1-l5ppm質量比鑭及i-i5ppm質量比銪，帶有質 量比鈣及MOppm質量比鈹之任一者或二者，前述各 元素之總量係不大於lOOppm質量比，差額為金及無法 避免的雜質。 ^ (請先閲讀背面之注意事項再填寫本頁} 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐）
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