CN1330404A - 用于半导体元件键合连接的金线 - Google Patents

用于半导体元件键合连接的金线 Download PDF

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CN1330404A
CN1330404A CN01108920A CN01108920A CN1330404A CN 1330404 A CN1330404 A CN 1330404A CN 01108920 A CN01108920 A CN 01108920A CN 01108920 A CN01108920 A CN 01108920A CN 1330404 A CN1330404 A CN 1330404A
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ppm
weight
bonding
residue
loop
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CN1267991C (zh
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板桥一光
高浦伸
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Tanaka Denshi Kogyo KK
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Tanaka Denshi Kogyo KK
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Abstract

一种用于半导体元件键合连接的金线,其中包含:11～20重量ppm的Ag、1～9重量ppm的Pt、1～15重量ppm的Y、1～15重量ppm的La、1～15重量ppm的Eu、以及1～20重量ppm的Ca和1～10重量ppm的Be这两者中的一者或两者,剩余的元素为Au和不可避免的杂质。

Description

用于半导体元件键合连接的金线
本发明涉及用于半导体元件键合连接(bonding)的金线，其用来实现半导体元件的电极与外部引线之间的电连接。更具体地涉及这样的用于半导体元件键合连接的金线，即使在加压键合(如果需要可用低压键合完成)时其也能令人满意地使用。
在半导体器件的封装中，现在采用的是，基于广泛使用的“球键合”法通过使用金线的布线法实现半导体元件的电极和外部引线之间的互连或键合。这种方法通常涉及在半导体元件的电极上用热压键合或超声波辅助的热压键合作为加键合方法形成布线。
图1A～1D示出了用于形成互连和回路的超声波辅助的热压键合，其中，1是毛细管，2是金线，3是焊炬电极，4是金属球，5是铝电极，6是半导体元件，7是夹具，8是引线。
在现在的半导体器件制造工艺中，在回路形成工艺中，为了稳定上述回路形状使其变形，强制地使球颈部分向与回路形成方向相反的方向弯曲，然后才形成最终的回路，由此是用“反向变形法”形成回路。许多半导体元件是在曝露在高温下使用的，该高温是因电路工作或外部环境造成的。因此，在以此种方式用“反向变形法”形成回路后，应寻求即使在严苛的热循环条件下尽可能减少线的断裂。
在日本专利特开平8-316262、特开平9-36162和特开平11-214425中，本发明的中请人已经公开，通过使用具有预定成分的金线作为形成回路的金线可以实现上述所期望的效果。
尽管在这些提案中已提供了在热循环条件下防止断线的成果，但由于近年来出现越来越严苛的使用环境导致需要即使在更恶劣的热循环条件下也能忍受断线的互连或键合。而且，已经发现在上述的几个提案中增加元件数目以防止断线，具有增加电阻的缺憾。而且，随着管脚的增加，必须在目前使用的低回路和高回路的运行中维持大的回路高度。
在图1A～1D的第二侧结点(此处也可称作引线8侧结点)中，高压键合可产生诸如高的回路形状的塌陷等的失常情况，因此应当用低压键合。但是低压键合又存在结点强度低的问题。因此，对于高的回路布线，理想的是在保持高的回路形状的同时，提高第二侧结点的即使是在低压键合时的结点强度。本发明人已尝试用金线满足这些性能要求，但是抗拉强度不够充分。
因此，鉴于上述现有技术中的问题而提出了本发明，其目的在于提供一种用于半导体元件键合连接的金线。其中：为了保证低电阻值，添加元素的总重量不超过100ppm；其能够1)反向变形以防止断线，即使在回路形成后处于严苛的热循环条件下；2)形成大于预定高度的高的回路；3)即使在用低压键合以保持高的电路形状时，第二侧结点的强度也能保持在预定值以上；4)保持高的抗拉强度。
为了实现上述目的，本发明提供一种用于半导体元件键合连接的金线，其中包含：11～20重量ppm的Ag、1～9重量ppm的Pt、1～15重量ppm的Y、1～15重量ppm的La、1～15重量ppm的Eu、以及1～20重量ppm的Ca和1～10重量ppm的Be这两者中的一者或两者，剩余的元素为Au和不可避免的杂质。
还提供一种使用上述金线的半导体元件的引线键合方法。
图1A-1D用来示意说明在半导体元件的电极和外部引线之间用金线进行超声波辅助热压键合的方法。
1.成分
a)原料金
作为原料的金优选采用提纯到至少99.99wt％的高纯金。纯度更优选为至少99.995wt％，最优选为至少99.999wt％。优选采用高纯金是为了减小有害组分的影响。
b)Ag
当用于本发明的金合金线含有预定量的Pt、Y、La、Eu和Ca或Be时，具有11～20重量ppm的Ag，可以实现上述目的。
与Ag含量低于11重量ppm时不同，这样做可以提高热循环测试后的断裂强度并具有高的抗拉强度。而且与Ag含量大于20重量ppm时不同，这样做还可以大大提高第二侧低压键合时的剥离强度，并保持高的抗拉强度。因此当具有预定含量的Pt等时把Ag的含量限定为11～20重量ppm。
c)Pt
当用于本发明的金合金线含有预定量的Ag、Y、La、Eu和Ca或Be时，具有1～9重量ppm的Pt，可以实现上述目的。
与Pt低于1重量ppm时不同，这样做可以提高热循环测试后的断裂强度并具有高的抗拉强度。而且与Pt大于9重量ppm时不同，这样做还可以大大提高第二侧低压键合时的剥离强度，并保持高的抗拉强度。因此当具有预定含量的Ag等时把Pt的含量限定为1～9重量ppm。
d)Y
当用于本发明的金合金线含有预定量的Ag、Pt、La、Eu和Ca或Be时，具有1～15重量ppm的Y，可以实现上述目的。
与Y低于1重量ppm时不同，这样做可以提高热循环测试后的断裂强度并具有高的抗拉强度。而且与Y大于15重量ppm时不同，这样做还可使回路的高度增加，同时可以大大提高第二侧低压键合时的剥离强度，并保持高的抗拉强度。
因此当具有预定含量的Ag等时把Y的含量限定为1～15重量ppm。
e)La
当用于本发明的金合金线含有预定量的Ag、Pt、Y、Eu和Ca或Be时，具有1～15重量ppm的Eu，可以实现上述目的。
与La低于1重量ppm时不同，这样做可以提高热循环测试后的断裂强度并具有高的抗拉强度。而且与La大于15重量ppm时不同，这样做还可使回路的高度增加，同时可以大大提高第二侧低压键合时的剥离强度，并保持高的抗拉强度。
因此当具有预定含量的Ag等时把La的含量限定为1～15重量ppm。
f)Eu
当用于本发明的金合金线含有预定量的Ag、Pt、Y、La和Ca或Be时，具有1～15重量ppm的La，可以实现上述目的。
与Eu低于1重量ppm时不同，这样做可以提高热循环测试后的断裂强度并具有高的抗拉强度。而且与Eu大于15重量ppm时不同，这样做还可使回路的高度增加，同时可以大大提高第二侧低压键合时的剥离强度，并保持高的抗拉强度。
因此当具有预定含量的Ag等时把Eu的含量限定为1～15重量ppm。
g)Ca、Be
当用于本发明的金合金线含有预定量的Ag、Pt、Y、La和Eu时，具有1～20重量ppm的Ca和1～10重量ppm的Be这两者中的一者或两者，可以实现上述目的。
与Ca和Be的含量都低于1重量ppm时不同，这样做可以提高热循环测试后的断裂强度并具有高的抗拉强度。而且与Ca含量大于20重量ppm或Be含量大于10重量ppm时不同，这样做还可使回路的高度增加，同时可以大大提高第二侧低压键合时的剥离强度，并保持高的抗拉强度。
因此当具有预定含量的Ag等时，同时或单独地把Ca的含量限定为1～20重量ppm，把Be的含量限定为1～10重量ppm。
2.金线制造方法
下面举一例说明本发明的用于半导体元件的金线的制造方法。首先熔炼具有预定成分的金属，铸成锭，用槽型辊轧机轧制，然后经中间退火，用最终冷加工制成直径为10～100μm的细线，之后进行最终退火，使线具有4～6％的延伸率，并用润滑防锈剂涂敷线的表面。将完全加工后的线以预定拉力和预定长度卷绕到外径50.3mm的线轴上以制备最终产品。所用的预定长度为100～3000m，但更长的长度也很常见。
3.用途
本发明的金线用于半导体元件的电极和外部引线之间的键合，键合方法用根据如图1A～1D所示的球键合方法的常规键合和互连。优选使用所谓的“高的回路”，其中线2’与图1D中的一样高。下面，结合图1A～1D描述球键合的键合方法。
如图1A所示，将金线2插入毛细管1中，使电喷炬3与线2的尖端相对，并产生到达金线2的放电，由此加热金线2的尖端，使其熔化形成球4。
然后，如图1B所示，降低毛细管1以在半导体元件6上的铝电极5上进行压力键合。在此处，施加穿过毛细管1的超声波振动(未图示)，同时用加热器单元加热半导体元件6，使得球4被热压键合，成为加压键合后的球4’。
然后，如图1C所示，将毛细管1移动并降低到沿某一预定轨道的外部引线8上。施加穿过毛细管1的超声波振动(未图示)，同时用加热器单元加热外部引线8，使得金线2的表面被热压键合到外部引线8上。
最后，如图1D所示，夹着金线2提升夹具7，由此切断金线2，完成布线。然后用树脂密封布线部分，完成半导体器件。
实施例1
把预定量的Ag、Pt、Y、La、Eu、Ca和Be加入纯度为99.999wt％的高纯金中，并在真空熔炉中熔化混合物，铸造获得具有表1所示成分的金合金锭。然后用槽型辊轧机和拉丝机进行冷加工，然后中间退火，冷加工结束时直径为25μm。之后进行最终退火使线具有4％的延伸率，用润滑剂涂敷线的表面，这样金合金线就完成了。
测试方法
1)热循环测试后的线断裂
将试验材料用作用高速自动键合器向IC芯片超声波热压键合的键合线。以0.196W的超声波输出和0.49N的负载进行球键合，之后首先将毛细管沿与回路成形方向相反的方向移动，反向角设为与垂直方向夹角60°，强制地使球颈部分弯曲以变形从而形成并保持向内弯曲，然后与外部引线结合形成矩形回路(布线)。每个IC芯片形成总共200个管脚线。用树脂密封布线样品，进行2000次最严苛的从-55℃×30分钟到160℃×30分钟的热循环试验。制备100个IC芯片进行测试，用导电试验确定是否有断线。有断线部分的IC数目示于表1作为断线率(％)。
2)回路高度
以同样的方式进行上述热循环试验，不同的是形成线时不用反向变形，且在8个IC芯片上形成键合。在随机选出的IC上用长度测量显微镜测量200条线的回路高度。将平均值列在表1中作为回路高度。
3)低输出接触键合时的第二侧剥离强度
以0.157W的超声波输出(通常为0.235W)和0.392N(通常为0.588N)的负载进行低输出接触键合，对第二侧(引线侧)的加压键合条件如图1C所示。如图1形成布线后，布线的中间部分被切断，用键合测试仪提供的镊子夹住引线侧的线的尖端，测量使线从被固定的引线剥离所需的负载。共测量了50个点，取其平均值列在表1中，作为第二侧低压键合时的剥离强度。
实施例2～17，比较例1～12
以与实施1相同的方式制作并测试金线，不同的是其元素含量如表1和2所示那样变化。试验结果也示于表1和2中。
                                表1
                       成分(重量ppm)                 *测试结果
                       添加元素 Au和不可避免的杂质 热循环试验后的线断裂(％) 回路高度(μm) 低输出接触键合时第二侧的剥离强度(mN) 抗拉强度(mN)
 Ag  Pt  Y  La  Eu  Ca  Be 总和
实施例1  11  5  10  10  10  10  5  61 剩余     0     187     58  131
 2  15  5  10  10  10  10  5  65 剩余     0     182     58  136
 3  20  5  10  10  10  10  5  70 剩余     0     181     52  141
 4  15  1  10  10  10  10  5  61 剩余     0     184     56  130
 5  15  9  10  10  10  10  5  69 剩余     0     186     59  139
 6  15  5  1  10  10  10  5  56 剩余     0     192     62  130
 7  15  5  15  10  10  10  5  70 剩余     0     185     55  140
 8  15  5  10  1  10  10  5  56 剩余     0     193     61  132
 9  15  5  10  15  10  10  5  70 剩余     0     188     57  142
 10  15  5  10  10  1  10  5  56 剩余     0     197     60  132
 11  15  5  10  10  15  10  5  70 剩余     0     186     54  141
 12  15  5  10  10  10  1  5  56 剩余     0     203     64  133
 13  15  5  10  10  10  20  5  75 剩余     0     170     51  144
 14  15  5  10  10  10  10  1  61 剩余     0     184     55  130
 15  15  5  10  10  10  10  10  70 剩余     0     188     57  140
 16  15  5  10  10  10  10  -  60 剩余     0     181     58  135
 17  15  5  10  10  10  -  5  55 剩余     0     186     57  134
                                表2
                       成分(重量ppm)                 *测试结果
                        添加元素 Au和不可避免的杂质 热循环试验后的线断裂(％)  回路高度(μm) 低输出接触键合时第二侧的剥离强度(mN)    抗拉强度(mN)
    Ag     Pt     Y  La     Eu  Ca     Be  总和
  比较例1     11     5     10  10     10  10     5   60  剩余     10     190     60     115
    2     -     -     -  10     10  10     5   60  剩余     43     188     57     117
    3     15     5     10  10     10  10     5   55  剩余     24     186     58     109
    4     15     5     10  -     10  10     5   55  剩余     24     188     58     111
    5     15     5     10  10     -  10     5   55  剩余     10     187     59     108
    6     15     5     10  10     10  -     -   50  剩余     30     191     60     105
    7     30     5     10  10     10  10     5   80  剩余     0     179     8     127
    8     15     10     10  10     10  10     5   70  剩余     0     183     12     129
    9     15     5     20  10     10  10     5   75  剩余     0     135     30     139
    10     15     5     10  20     10  10     5   75  剩余     0     138     33     145
    11     15     5     10  10     20  10     5   75  剩余     0     141     28     146
    12     15     5     10  10     10  30     5   85  剩余     0     130     19     149
    13     15     5     10  10     -  30     5   75  剩余     0     131     20     140
(试验结果)
(1)其元素Ag、Pt、Y、La、Eu、Ca和Be的含量分别在本发明范围内的实施例1～17都是优良的产品，在严苛条件下的热循环试验后表现出0％的线断裂，同时回路高度在170μm以上，即使用低压键合第二侧(引线侧)的剥离强度也在51mN以上，且能维持130mN以上的高的抗拉强度。
因此，本发明的构造能实现本发明的目的，即提供一种用于半导体元件键合连接的金线。其中：为了保证低电阻值，添加元素的总重量不超过100ppm；其能够1)反向变形以防止断线，即使在回路形成后处于严苛的热循环条件下；2)形成大于预定高度的高的回路；3)即使在用低压键合以保持高的电路形状时，第二侧结点的强度也能保持在预定值以上；4)保持高的抗拉强度。
(2)对于比较例1～5，元素Ag、Pt、Y、La和Eu中的其中一个未加入，它们的添加量分别为Ag15重量ppm、Pt5重量ppm、Y10重量ppm、La10重量ppm、Eu10重量ppm、Ca10重量ppm、Be5重量ppm。而比较例6中，添加了Ag、Pt、Y、La和Eu，但未添加Ca和Be。所有这些比较例的样品在严苛条件下的热循环测试后具有无法接受的高达10～43％的线断裂，且虽然回路高度和低压键合下的第二侧剥离强度有改进，但抗拉强度不够，只有105～117mN，因此在实现本发明目的方面，这些样品远不如根据本发明的样品。
(3)对于比较例7和8，在添加量分别为Ag15重量ppm、Pt5重量ppm、Y10重量ppm、La10重量ppm、Eu10重量ppm、Ca10重量ppm、Be5重量ppm的成分中，Ag含量增加到20重量ppm以上，或Pt含量增加到9重量ppm以上。这两者的样品都具有高的回路高度，但是低压键合时第二侧的剥离强度为8～12mN，抗拉强度为127～129mN，因此在实现本发明目的方面，这些样品远不如根据本发明的样品。
(4)对于比较例9～12，在添加量分别为Ag15重量ppm、Pt5重量ppm、Y10重量ppm、La10重量ppm、Eu10重量ppm、Ca10重量ppm、Be5重量ppm的成分中，Y含量增加到15重量ppm以上，La含量增加到15重量ppm以上，Eu含量增加到15重量ppm以上，或Ca含量增加到20重量ppm以上。这些样品都具有130～141微米的高的回路高度，但是低压键合时第二侧的剥离强度为19～33mN，因此在实现本发明目的方面，这些样品远不如根据本发明的样品。
(5)对于比较例13，在不含Eu的成分中，其它元素添加量分别为Ag15重量ppm、Pt5重量ppm、Y10重量ppm、La10重量ppm、Ca30重量ppm、Be5重量ppm，回路高度为131微米，低压键合时第二侧的剥离强度为20mN，因此在实现本发明目的方面，这些样品远不如根据本发明的样品。

Claims (1)

1.一种用于半导体元件键合连接的金线，其中包含：11～20重量ppm的Ag、1～9重量ppm的Pt、1～15重量ppm的Y、1～15重量ppm的La、1～15重量ppm的Eu、以及1～20重量ppm的Ca和1～10重量ppm的Be这两者中的一者或两者，剩余的元素为Au和不可避免的杂质。
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CN100487883C (zh) * 2004-09-30 2009-05-13 田中电子工业株式会社 金合金焊线
CN102326241A (zh) * 2009-02-23 2012-01-18 株式会社新川 半导体装置的制造方法以及焊接装置
CN107644716A (zh) * 2017-09-15 2018-01-30 佛山慧创正元新材料科技有限公司 添加蜜胺甲醛树脂的复合铜丝生产方法
CN107958850A (zh) * 2017-11-28 2018-04-24 宁波尚进自动化科技有限公司 一种焊点焊接质量监控系统及其监控方法
CN109811176A (zh) * 2019-03-25 2019-05-28 杭州辰卓科技有限公司 一种电子器件封装高阻尼键合线用金合金及其工艺

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CN100487883C (zh) * 2004-09-30 2009-05-13 田中电子工业株式会社 金合金焊线
CN102326241A (zh) * 2009-02-23 2012-01-18 株式会社新川 半导体装置的制造方法以及焊接装置
CN102326241B (zh) * 2009-02-23 2014-04-02 株式会社新川 半导体装置的制造方法以及焊接装置
CN107644716A (zh) * 2017-09-15 2018-01-30 佛山慧创正元新材料科技有限公司 添加蜜胺甲醛树脂的复合铜丝生产方法
CN107958850A (zh) * 2017-11-28 2018-04-24 宁波尚进自动化科技有限公司 一种焊点焊接质量监控系统及其监控方法
CN109811176A (zh) * 2019-03-25 2019-05-28 杭州辰卓科技有限公司 一种电子器件封装高阻尼键合线用金合金及其工艺

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