CN105803245B - 一种高性能键合合金丝及其制备方法与应用 - Google Patents

一种高性能键合合金丝及其制备方法与应用 Download PDF

Info

Publication number
CN105803245B
CN105803245B CN201610236204.4A CN201610236204A CN105803245B CN 105803245 B CN105803245 B CN 105803245B CN 201610236204 A CN201610236204 A CN 201610236204A CN 105803245 B CN105803245 B CN 105803245B
Authority
CN
China
Prior art keywords
alloy wire
bonding alloy
bonding
wire
gold
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610236204.4A
Other languages
English (en)
Other versions
CN105803245A (zh
Inventor
薛子夜
赵义东
吴正浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZHEJIANG GPILOT TECHNOLOGY Co Ltd
Original Assignee
ZHEJIANG GPILOT TECHNOLOGY Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by ZHEJIANG GPILOT TECHNOLOGY Co Ltd filed Critical ZHEJIANG GPILOT TECHNOLOGY Co Ltd
Priority to CN201610236204.4A priority Critical patent/CN105803245B/zh
Publication of CN105803245A publication Critical patent/CN105803245A/zh
Application granted granted Critical
Publication of CN105803245B publication Critical patent/CN105803245B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22C—ALLOYS
    • C22C5/00—Alloys based on noble metals
    • C22C5/02—Alloys based on gold
    • C—CHEMISTRY; METALLURGY
    • C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
    • C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
    • C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
    • C22F1/14—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of noble metals or alloys based thereon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/43—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/432—Mechanical processes
    • H01L2224/4321—Pulling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/43—Manufacturing methods
    • H01L2224/438—Post-treatment of the connector
    • H01L2224/43848—Thermal treatments, e.g. annealing, controlled cooling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45139—Silver (Ag) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144—Gold (Au) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45163—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/45164—Palladium (Pd) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/00011—Not relevant to the scope of the group, the symbol of which is combined with the symbol of this group
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0102—Calcium [Ca]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01026—Iron [Fe]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01041—Niobium [Nb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01046—Palladium [Pd]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01073—Tantalum [Ta]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01075—Rhenium [Re]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/30—Technical effects
    • H01L2924/35—Mechanical effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Physics & Mathematics (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Wire Bonding (AREA)

Abstract

本发明提供了一种高性能键合合金丝及其制备方法与应用，该键合合金丝通过采用高纯金为基材，添加次要元素银、钯及微量元素钙、铁、钽、铌、铼等，并在合理分析和大量研究的基材上确定上述各组分的最适宜用量，使得合金中的各元素间产生协同促进作用，从而能够获得一种强度高、适于高速键合的高性能键合合金丝。经试验证明，本发明的键合合金丝具有良好的导热性和机械性能，其抗拉强度优于同等线径的传统键合合金丝，且本发明的键合合金丝的材料成本仅为黄金线材的3/4，总体销售价格仅为同规格金线的4/5，大幅降低了LED及IC封装的制造成本，因而本发明的键合合金丝是分立器件和集成电路封装领域的首选材料。

Description

一种高性能键合合金丝及其制备方法与应用
技术领域
本发明属于封装材料技术领域，尤其涉及一种强度高、适于高速键合的高性能键合合金丝及其制备方法与应用。
背景技术
键合丝作为封装用内引线，是集成电路和半导体分立器件的制造过程中必不可少的基础材料之一，起联接硅片电极与引线框架的外部引出端子、传递芯片电信号、散发芯片热量的作用。键合丝材质的好坏将直接影响焊接质量，从而决定封装器件的可靠性和稳定性。
传统的键合丝主要是由纯金材质制成，称为键合金丝，其具备优异的化学稳定性和导电导热性能，因而被广泛用作IC内引线。但随着国际金价的不断上涨，键合金丝的价格也一路攀升，导致终端产品的成本过高，不利于企业提高竞争力。除此之外，键合金丝的抗拉强度较低，例如直径20微米的金线，在焊接后，其最高抗拉强度不足5克力，延伸率一般不超过6％，以上两方面因素成为阻碍键合金丝应用与发展的瓶颈。
为降低封装成本，同时也为了适应各种键合需求，键合银丝、键合金银合金丝应运而生。在所有的金属元素中，银的导电性能最好，但使用纯银丝所存在的最大挑战就是成球不稳定、易氧化的问题，因此人们将注意力转向金银合金丝的研制领域。例如，中国专利文献CN102776405A公开了一种键合金银合金丝，其由以下重量比的金属材料组成：银20-30％，钯、钙、铍和铈均为5-1000ppm，其余含量为金。但上述技术制得的键合合金丝的抗拉强度依然较差，在高速键合条件下易断线，造成生产效率低下、焊接效果不理想，而必须使用粗线才能键合，这无疑提高了生产成本。鉴于此，开发一种强度高、适于高速键合的高性能键合合金丝，是本领域亟待解决的一个技术难题。
发明内容
本发明所要解决的技术问题在于克服现有的键合合金丝所存在的强度低、难以满足高速键合需求的缺陷，进而提供一种强度高、适于高速键合的高性能键合合金丝及其制备方法与应用。
为此，本发明实现上述目的的技术方案为：
一种高性能键合合金丝，以所述键合合金丝的总重量计，包括以下重量百分含量的组分：
金70～85％、银10～25％、钯3～6％、钙0.02～0.08％、铁0.05～0.1％、钽0.05～0.1％、铌0.03～0.08％、铼0.02～0.06％。
优选地，所述键合合金丝包括如下组分：
金75～80％、银17～20％、钯3～5％、钙0.02～0.05％、铁0.07～0.1％、钽0.05～0.1％、铌0.05～0.08％、铼0.02～0.05％。
优选地，所述键合合金丝包括如下组分：
金70～75％、银20～25％、钯3～5％、钙0.05～0.06％、铁0.07～0.08％、钽0.06～0.1％、铌0.07～0.1％、铼0.04～0.05％。
优选地，所述金的纯度不小于99.999wt％；所述银的纯度不小于99.99wt％；所述钯的纯度不小于99.99wt％。
一种制备上述键合合金丝的方法，包括如下步骤：
(1)将上述各组分混合后进行真空熔炼，并制成合金棒材；
(2)对所述合金棒材进行拉丝加工，形成预定线径的合金线材；
(3)对所述合金线材进行退火处理，即制得所述键合合金丝。
优选地，所述真空熔炼的温度为1100～1200℃、真空度为10-2～10-4Pa。
优选地，所述退火的温度为500-700℃，退火速度为50-65m/min。
进一步地，还包括在所述退火处理之后依次设置的绕线工艺和封装工艺。
优选地，在所述退火处理的过程中还包括性能测试环节。
上述键合合金丝在分立器件和集成电路封装技术中的应用。
本发明的上述技术方案具有如下优点：
1、本发明所述的高性能键合合金丝，通过采用高纯金为基材，添加次要元素银、钯及微量元素钙、铁、钽、铌、铼等，并在合理分析和大量研究的基材上确定上述各组分的最适宜用量，使得合金中的各元素间产生协同促进作用，从而能够获得一种强度高、适于高速键合的高性能键合合金丝。经试验证明，本发明的键合合金丝具有良好的导热性和机械性能，其抗拉强度优于同等线径的传统键合合金丝，且本发明的键合合金丝的材料成本仅为黄金线材的3/4，总体销售价格仅为同规格金线的4/5，大幅降低了LED及IC封装的制造成本，因而使得本发明的键合合金丝有望成为分立器件和集成电路封装领域的首选材料。
2、本发明所述的制备键合合金丝的方法，通过将金、银、钯、钙、铁、钽、铌、铼等材料混合后依次进行真空熔炼、拉丝及退火处理，即可制得高强度的键合合金丝，具有工艺简单、易于生产的优势。
具体实施方式
下面将对本发明的技术方案进行清楚、完整地描述，显然，所描述的实施例是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。此外，下面所描述的本发明不同实施方式中所涉及的技术特征只要彼此之间未构成冲突就可以相互结合。
在下述实施例中，5N指的是纯度为99.999wt％，6N指的是纯度为99.9999wt％。
实施例1
本实施例所述的键合合金丝，以其总重量计，由如下重量百分含量的组分组成：
5N银10％、5N钯6％、钙0.08％、铁0.05％、钽0.075％、铌0.055％、铼0.02％，余量为5N金。
所述键合合金丝的制备方法包括如下步骤：
(1)将上述各组分混合均匀后置于真空熔炼机中，在下真空度为10-4Pa、温度为1200℃的条件下进行真空熔炼，并制成的合金棒材；
(2)对所述合金棒材进行拉丝加工，使用各种拉丝机由粗到细将合金棒材拉制成预定线径的合金线材，具体为：
首先经过第一粗伸线机拉伸，将线径由8mm拉伸至1mm，拉伸速度为0.1m/s，再依序经过第二细伸线机(例如日本SKAWA公司生产的SS21BC)以0.5m/s的速率拉伸至0.1mm、极细伸线机(例如日本SKAWA生产的WSS21BC)以1m/s的速率拉伸至0.05mm、及超极细伸线机拉伸(例如日本SKAWA生产的WSS21BC)以3m/s的速率进一步拉伸为线径为23μm、25μm的两种键合合金丝；
(3)在500℃、以65m/min的速度对所述合金线材进行退火处理，成品经性能测试合格后即为所述键合合金丝。
本实施例制得的键合合金丝呈淡黄色，其热传导率为3.15W/cm·K，电阻率为4.2μΩ·cm。
实施例2
本实施例所述的键合合金丝，以其总重量计，由如下重量百分比的组分组成：
5N银17％、5N钯4.5％、钙0.05％、铁0.07％、钽0.05％、铌0.08％、铼0.04％，余量为5N金。
所述键合合金丝的制备方法包括如下步骤：
(1)将上述各组分混合均匀后置于真空熔炼机中，在下真空度为10-3Pa、温度为1100℃的条件下进行真空熔炼，并制成的合金棒材；
(2)对所述合金棒材进行拉丝加工，使用各种拉丝机由粗到细将合金棒材拉制成预定线径的合金线材，具体为：
首先经过第一粗伸线机拉伸，将线径由8mm拉伸至1mm，拉伸速度为0.1m/s，再依序经过第二细伸线机(例如日本SKAWA公司生产的SS21BC)以0.5m/s的速率拉伸至0.1mm、极细伸线机(例如日本SKAWA生产的WSS21BC)以1m/s的速率拉伸至0.05mm、及超极细伸线机拉伸(例如日本SKAWA生产的WSS21BC)以3m/s的速率进一步拉伸为线径为23μm、25μm的两种键合合金丝；
(3)在600℃、以5.75m/min的速度对所述合金线材进行退火处理，成品经性能测试合格后即为所述键合合金丝。
实施例3
本实施例所述的键合合金丝，以其总重量计，由如下重量百分比的组分组成：
5N银25％、5N钯3％、钙0.02％、铁0.1％、钽0.1％、铌0.03％、铼0.06％，余量为5N金。
所述键合合金丝的制备方法包括如下步骤：
(1)将上述各组分混合均匀后置于真空熔炼机中，在下真空度为10-2Pa、温度为1150℃的条件下进行真空熔炼，并制成的合金棒材；
(2)对所述合金棒材进行拉丝加工，使用各种拉丝机由粗到细将合金棒材拉制成预定线径的合金线材，具体为：
首先经过第一粗伸线机拉伸，将线径由8mm拉伸至1mm，拉伸速度为0.1m/s，再依序经过第二细伸线机(例如日本SKAWA公司生产的SS21BC)以0.5m/s的速率拉伸至0.1mm、极细伸线机(例如日本SKAWA生产的WSS21BC)以1m/s的速率拉伸至0.05mm、及超极细伸线机拉伸(例如日本SKAWA生产的WSS21BC)以3m/s的速率进一步拉伸为线径为23μm、25μm的两种键合合金丝；
(3)在700℃、以50m/min的速度对所述合金线材进行退火处理，成品经性能测试合格后再经绕线和封装处理，即制得所述键合合金丝。
实施例4
本实施例所述的键合合金丝，以其总重量计，由如下重量百分比的组分组成：
5N银20％、5N钯5％、钙0.06％、铁0.08％、钽0.06％、铌0.07％、铼0.05％，余量为5N金。
所述键合合金丝的制备方法包括如下步骤：
(1)将上述各组分混合均匀后置于真空熔炼机中，在下真空度为10-4Pa、温度为1200℃的条件下进行真空熔炼，并制成的合金棒材；
(2)对所述合金棒材进行拉丝加工，使用各种拉丝机由粗到细将合金棒材拉制成预定线径的合金线材，具体为：
首先经过第一粗伸线机拉伸，将线径由8mm拉伸至1mm，拉伸速度为0.1m/s，再依序经过第二细伸线机(例如日本SKAWA公司生产的SS21BC)以0.5m/s的速率拉伸至0.1mm、极细伸线机(例如日本SKAWA生产的WSS21BC)以1m/s的速率拉伸至0.05mm、及超极细伸线机拉伸(例如日本SKAWA生产的WSS21BC)以3m/s的速率进一步拉伸为线径为23μm、25μm的两种键合合金丝；
(3)在550℃、以60℃/min的速度对所述合金线材进行退火处理，成品经性能测试合格后再经绕线和封装处理，即制得所述键合合金丝。
对比例1
在本对比例中，传统键合合金丝是由如下重量百分比的组分组成：金78％、银17％、钯0.6％、钙0.05％；其制备工艺同实施例2。
实验例1
采用本发明实施例1的键合合金丝完成对LED灯珠的键合，通过测试封装好的LED灯珠在高温及低温下的缺亮情况，反映键合合金丝的耐冷热冲击性能，具体测试条件为：选择220个相同型号的LED灯珠，将其随机分为10组，每组22个；高温存储：100℃，5分钟；转换时间：10秒；低温存储：－10℃，5分钟。测试结果见表1。
表1 实施例1的键合合金丝的耐冷热冲击性能(亮灯数/样品数)
表1清楚地显示了，在上述测试条件下，无一灯珠出现缺亮情况，这充分说明本发明的键合合金丝能够抵抗冷热冲击，具有良好的韧性。
实验例2
对本发明实施例1-2及对比例1制得的键合合金丝的机械性能进行了测试，结果如表2所示。
表2 不同键合合金丝的机械性能
从表2可以看出，在同一线径下，实施例1-2的键合合金丝的机械性能均优于对比例1，特别是实施例1-2中线径为23μm的键合合金丝具有与对比例1中线径为25μm的键合合金丝相当或更优的机械性能，这充分说明，在实际键合生产中，本发明线径为23μm的键合合金丝完全可以代替传统的线径为25μm的键合合金丝使用，由此足以降低15％的线材成本。
显然，上述实施例仅仅是为清楚地说明所作的举例，而并非对实施方式的限定。对于所属领域的普通技术人员来说，在上述说明的基础上还可以做出其它不同形式的变化或变动。这里无需也无法对所有的实施方式予以穷举。而由此所引伸出的显而易见的变化或变动仍处于本发明创造的保护范围之中。

Claims (10)

1.一种高性能键合合金丝，其特征在于，以所述键合合金丝的总重量计，包括以下重量百分含量的组分：
金70～85％、银10～25％、钯3～6％、钙0.02～0.08％、铁0.05～0.1％、钽0.05～0.1％、铌0.03～0.08％、铼0.02～0.06％。
2.根据权利要求1所述的键合合金丝，其特征在于，包括如下组分：
金75～80％、银17～20％、钯3～5％、钙0.02～0.05％、铁0.07～0.1％、钽0.05～0.1％、铌0.05～0.08％、铼0.02～0.05％。
3.根据权利要求1所述的键合合金丝，其特征在于，包括如下组分：
金70～75％、银20～25％、钯3～5％、钙0.05～0.06％、铁0.07～0.08％、钽0.06～0.1％、铌0.07～0.1％、铼0.04～0.05％。
4.根据权利要求1-3任一项所述的键合合金丝，其特征在于，所述金的纯度不小于99.999wt％；所述银的纯度不小于99.99wt％；所述钯的纯度不小于99.99wt％。
5.一种制备权利要求1-4任一项所述的键合合金丝的方法，其特征在于，包括如下步骤：
(1)将上述各组分混合后进行真空熔炼，并制成合金棒材；
(2)对所述合金棒材进行拉丝加工，形成预定线径的合金线材；
(3)对所述合金线材进行退火处理，即制得所述键合合金丝。
6.根据权利要求5所述的制备键合合金丝的方法，其特征在于，所述真空熔炼的温度为1100～1200℃、真空度为10-2～10-4Pa。
7.根据权利要求5所述的制备键合合金丝的方法，其特征在于，所述退火的温度为500-700℃，退火速度为50-65m/min。
8.根据权利要求5-7任一项所述的制备键合合金丝的方法，其特征在于，还包括在所述退火处理之后依次设置的绕线工艺和封装工艺。
9.根据权利要求5所述的制备键合合金丝的方法，其特征在于，在所述退火处理的过程中还包括性能测试环节。
10.权利要求1-4任一项所述的键合合金丝在分立器件和集成电路封装技术中的应用。
CN201610236204.4A 2016-04-15 2016-04-15 一种高性能键合合金丝及其制备方法与应用 Active CN105803245B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201610236204.4A CN105803245B (zh) 2016-04-15 2016-04-15 一种高性能键合合金丝及其制备方法与应用

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610236204.4A CN105803245B (zh) 2016-04-15 2016-04-15 一种高性能键合合金丝及其制备方法与应用

Publications (2)

Publication Number Publication Date
CN105803245A CN105803245A (zh) 2016-07-27
CN105803245B true CN105803245B (zh) 2017-10-20

Family

ID=56461010

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610236204.4A Active CN105803245B (zh) 2016-04-15 2016-04-15 一种高性能键合合金丝及其制备方法与应用

Country Status (1)

Country Link
CN (1) CN105803245B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3862445A1 (fr) * 2020-02-07 2021-08-11 Richemont International S.A. Alliage d'or et son procede de fabrication

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN106298721B (zh) * 2016-08-19 2017-07-28 广东佳博电子科技有限公司 一种键合金丝及其制备方法
CN107240551A (zh) * 2017-06-05 2017-10-10 广东工业大学 一种银合金键合丝的制备方法
CN108198795A (zh) * 2017-12-20 2018-06-22 汕头市骏码凯撒有限公司 一种金钯银合金复合键合丝及其制造方法
CN109321774A (zh) * 2018-12-04 2019-02-12 北京椿树电子材料有限公司 一种高性能银钯复合键合材料
CN109767991B (zh) * 2019-01-15 2022-05-31 江西蓝微电子科技有限公司 一种高金合金键合丝的制备方法
CN111020272A (zh) * 2019-12-14 2020-04-17 深圳晶辉应用材料有限公司 一种高性能金基银钯合金键合材料
CN112813296A (zh) * 2020-12-25 2021-05-18 有研亿金新材料有限公司 一种AuPdFeIr合金丝材电接触材料的制备方法
CN112680618A (zh) * 2020-12-29 2021-04-20 南昌航空大学 一种led键合金线的制备方法
WO2023237505A1 (en) * 2022-06-08 2023-12-14 Signify Holding B.V. Use of ksf phosphor in leds with wire-bonds with maximum amount of silver

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0719787B2 (ja) * 1989-02-20 1995-03-06 タツタ電線株式会社 ボンディング用金合金細線
JPH0719788B2 (ja) * 1989-02-20 1995-03-06 タツタ電線株式会社 ボンディング用金合金細線
JP3779817B2 (ja) * 1998-04-24 2006-05-31 タツタ電線株式会社 半導体素子用金合金線
JP3811600B2 (ja) * 1999-09-29 2006-08-23 タツタ電線株式会社 半導体素子金合金線
CN102418001A (zh) * 2011-11-16 2012-04-18 浙江佳博科技股份有限公司 一种键合金丝及其制备方法
CN102437136B (zh) * 2011-11-16 2013-01-23 浙江佳博科技股份有限公司 一种键合合金丝及其生产工艺

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3862445A1 (fr) * 2020-02-07 2021-08-11 Richemont International S.A. Alliage d'or et son procede de fabrication

Also Published As

Publication number Publication date
CN105803245A (zh) 2016-07-27

Similar Documents

Publication Publication Date Title
CN105803245B (zh) 一种高性能键合合金丝及其制备方法与应用
CN102776405B (zh) 一种键合金银合金丝的制备方法
CN105296789B (zh) 一种高可靠性银合金键合丝及其制造方法
CN109003903A (zh) 一种键合金丝及其制备方法
CN105463237B (zh) 一种铜银合金键合丝及其制备方法
CN107665874A (zh) 一种包覆金的金合金复合键合丝及其制造方法
KR20120031451A (ko) 중합체 코어 와이어
CN108796269A (zh) 金合金键合丝及其制造方法
KR101905942B1 (ko) 본딩용 와이어
CN102418001A (zh) 一种键合金丝及其制备方法
CN102226991A (zh) 铜钯合金单晶键合丝及其制造方法
TW201028240A (en) Composite bonding wire manufacturing method and product thereof
KR20150032900A (ko) 본딩용 와이어
CN108922876A (zh) 一种金合金键合丝及其制造方法
JP2010245390A (ja) ボンディングワイヤ
CN103985687B (zh) 用于半导体封装的银合金焊接导线
CN109930020A (zh) 一种键合合金丝及其制备和应用
CN105063407A (zh) 一种led封装用银合金键合丝及其制造方法
CN105671355B (zh) 一种低成本合金键合丝及其制备方法与应用
CN108823453A (zh) 一种低金金合金键合丝及其制造方法
CN108796285A (zh) 一种银合金键合丝及其制造方法
CN101431029B (zh) 封装导线用的复合金属线及其制造方法
CN110066938A (zh) 一种用于微型封装的金属丝
CN110117733A (zh) 一种金银合金键合丝及其制造方法
CN106244844A (zh) 一种半导体用的铜线及其制备方法

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant