CN1113412C - 电极为金属合金的半导体器件 - Google Patents

电极为金属合金的半导体器件 Download PDF

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CN1113412C
CN1113412C CN98107066A CN98107066A CN1113412C CN 1113412 C CN1113412 C CN 1113412C CN 98107066 A CN98107066 A CN 98107066A CN 98107066 A CN98107066 A CN 98107066A CN 1113412 C CN1113412 C CN 1113412C
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metal
electrode
aluminium
layer
semiconductor
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CN1197291A (zh
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铃木功一
佐藤定信
山下由美子
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Harada Sangyo Co Ltd
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ONMASUKI ELECTRONICS CO Ltd
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    • B23K20/00—Non-electric welding by applying impact or other pressure, with or without the application of heat, e.g. cladding or plating
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Abstract

用于半导体器件的由第一和第二金属层组成的金属合金中，所述第一金属层由铜和铝组成，其中铜大约占0.1-10重量百分比，其余部分基本上为铝，而第二金属层由钯和金组成，其中钯大约占0.5-5重量百分比，其余部分基本上为金。

Description

电极为金属合金的半导体器件
技术领域
本发明涉及一种半导体器件，更确切地说，是采用金属合金作为半导体器件的垫片(电极)和导线(或突点)。
背景技术
通常，半导体器件由一引线框架构成，一半导体焊盘装在该引线框架的支承板上，而导线连接于半导体焊盘的电极和引线框架的引线之间。然后用树脂封装该半导体器件。
在已知技术的半导体器件中，其电极由铝(Al)或硅化铝(AlSi)制成，其导线由金(Al)制成。由于金具有较强的韧性及可锻性，因此树脂注入和冷却(或固化时)所产生的应力几乎不会使金导线断裂。虽然树脂中含有杂质和水分，但是，由于金在金属中惰性最大，因此金导线几乎不会被腐蚀，而且该金导线也不会被空气氧化。
从另一方面来说，在多媒体或类似领域中，由于半导体器件高度集成并高速地工作，因此每个半导体焊盘的热耗都明显增加。由此要求这种半导体器件的连接温度T必须大于125℃。可是，传统半导体器件的连接温度低于100℃，甚至专门用于汽车的半导体器件的连接温度也低于125℃。此外，为了降低连接温度，该半导体器件可用陶瓷封壳封装，或采用散热性能好的金属封壳封装，或采用具有散热片的树脂注模进行封装。但是无论采用陶瓷封装、金属封装、还是具有内部散热片的树脂注模封装，都会增加其制造成本。
因此，既使在要求每个半导体焊盘能进行大功率的散热的多媒体或类似领域中，鉴于制造成本，这种没有内部散热片的树脂注模封装也是不可缺少的。在这种情况下，要求确保连接温度高于125℃。
可是在上述已知技术的无散热片的树脂注模封装的半导体器件中，为了保证连接温度高于125℃，在温度高于150℃时，如175℃-200℃，对半导体器件进行模拟可靠性试验如高温蓄能试验，电极(铝或硅化铝)与导线(金)之间会产生一种叫做“紫斑”的复合层或类似物，由此降低了它们之间的键合强度。在最坏的情况下，电极与导线之间会产生肯德尔空隙，致使导线与电极不连接。以下将对其进行详细的说明。
另外，由于电极与导线的结合强度的恶化，因此树脂注模半导体器件的失效率取决于树脂的玻璃转换温度Tg。在此，树脂的玻璃转换温度Tg越高，半导体器件的失效率就越低。以下也将对其进行详细的说明。
应该注意的是，在已经公开的JP-A-2-119148文献中，导线由铜和金组成，其中铜占1-5重量百分比，其余部分基本上为金。在另一份已经公开的JP-A-4-229631文献中，导线由铜和金组成，其中铜占5-30重量百分比，其余部分基本上为金。更进一步，在已经公开的JP-A-56-49535文献中，导线由钯和金组成，其中钯占1-40重量百分比，其余部分基本上为金。因此改进了电极与导线间的结合强度。但是由JP-A-2-119148、JP-A-4-229631及JP-A-56-49535文献中的任何一个可知，不考虑铜和钯的组成效果，而仅改进电极与导线间的结合强度是不够的。
发明内容
本发明的目的在于进一步提高半导体器件(焊盘)的电极与导线之间在高温度下结合强度的可靠性。
本发明的另一目的在于提供一种带改进突点的半导体器件。
本发明的又一目的在于提供一种新型的金属合金用于半导体器件。
根据本发明，用于半导体器件的金属合金包括第一和第二两种金属层，第一金属层由铜和铝组成，其中铜大约占0.1-10重量百分比，其余部分基本上为铝，第二金属层由钯和金组成，其中钯占0.5-5重量百分比，其余部分基本上为金。
另外，在半导体器件的金属合金中，也可以由铜、钯及铝组成，其中铜占0.1-10重量百分比，钯占0.5-5重量百分比，其余部分基本上为铝。
进一步而言，在由第一和第二两种金属层形成的半导体器件的金属合金中，第一金属层由铜和铝组成，其中铜占0.1-10重量百分比，其余部分基本上为铝，第二金属层基本上为纯钯。基本上由金组成的第三金属层也可以设在第二金属层上。
另外，在有半导体焊盘的半导体器件中，电极形成在半导体焊盘上，导线(或突点)与电极一一连接，含有第一金属层的每一个电极都由铜和铝组成，其中铜大约占0.1-10重量百分比，其余部分基本上为铝，含有第二金属层的每一个导线(或突点)都由钯和金组成，其中钯大约占0.5-5重量百分比，其余部分基本上为金。
更进一步而言，在有半导体焊盘的半导体器件中，电极形成在半导体焊盘上，导线(或突点)与电极一一连接，含有第一金属层的每一个电极由铜和铝组成，其中铜占大约0.1-10重量百分比，其余部分基本上为铝，而第二金属层形成在第一种金属层上，其基本上由钯组成。导线(或突点)的基本组成也可以是金。
下面参照附图，并结合已知技术，对本发明进行更详细的说明。
附图说明
图1为已知技术树脂注模半导体器件的剖视图；
图2为图1所示金属连接结构的局部放大剖视图；
图3为图1所示器件的失效率曲线图；
图4A为图1所示器件的寿命图表；
图4B为图1所示器件的失效率曲线图；
图5A和5B为图2的金属连接结构的复合物及肯德尔空隙的剖视图；
图6A为本发明的半导体器件的第一实施例剖视图；
图6B为图6A所示结构变形的又一剖视图；
图7A为图6所示器件的寿命图表；
图7B为图6所示器件的失效率曲线图；
图8A为图6所示器件的另一寿命图表；
图8B为图6所示器件的另一失效率曲线图；
图9A为本发明的半导体器件的第二实施例剖视图；
图9B为图9A所示结构变形的又一剖视图；
具体实施方式
在介绍优选实施例以前，首先参照图1、2、3、4A、4B、5A、5B对已知技术的半导体器件进行介绍。
图1所示为已知技术的树脂注模半导体器件，一半导体焊盘1粘接在引线框架的支承板2上。在该半导体焊盘1上有多个电极1a，该电极通过键合线3与引线框架的引线4键合。所述半导体焊盘1与所述电极1a、支承板2、导线3及引线4都被注模树脂封装体5密封。
图2为一电极1a与一导线3之间的金属连接结构的放大图，该电极1a由铝或硅化铝制成，导线3由金制成。
图1、2所示半导体器件采用回流焊接法安装在印刷板上。
为了确保图1所示的半导体器件，实际上是图2所示的金属连接结构在高温下能有效的连接。本发明人提出了一种确保金属连接结构可靠连接的方法。即，金属连接结构的温度Tj表示为：
Tj＝Ta+Rth·PW
其中Ta为环境温度(℃)，
Rth为半导体器件的总热阻(deg/w)，而且
PW为提供给半导体器件的功率(W)，热阻Rth也表示为
Rth＝Rth(j-c)+Rth(c-a)
其中Rth(j-c)是半导体焊盘1和注模树脂封装体5之间的热阻；
Rth(c-a)是注模树脂封装体5和环境大气压之间的热阻。
在金属连接温度Tj为125℃-150℃时，为了达到较高的可靠性，如果Ta为100℃，PW为1w，那么
Rth＝(Tj-Ta)/PW
   ＝25～50(deg/w)
   ＞20(deg/w)
在Rth＞20(deg/w)的情况下，寿命的百万分之10(10ppm)应大于1000小时。在这种情况下，本发明人发现寿命的长短取决于注模树脂封装体5的玻璃转换温度Tg，如图3所示。即，如图3所示的已知技术，其中导线3由纯金制成，当改变注模树脂封装体5的二氧化硅的组份，而注模树脂封装体5的玻璃转换温度分别为150℃，160℃，和200℃时，其失效率越低，则玻璃转换温度Tg就越高。可是，应该注意的是，当玻璃转换温度Tg太高时，虽然注模树脂封装体5的直接弹性模量较小，使其具有刚性，但是，由于注模树脂封装体5的弹性较低，因此在安装半导体器件时会产生一个问题。即，当半导体器件进行焊接热操作时，注模树脂封装体5中的水分迅速蒸发，使其内部产生开裂。在另一方面，如图3所示的已知技术2，即JP-A-119148文献，在该技术中，导线3由金和1重量百分比铜制成，既使当注模树脂封装体5达到大约140℃-160℃的玻璃转换温度时，半导体器件的失效率能够下降。另外，如图3所示的已知技术3，即JP-A-56-49535文献，在该技术中，导线3由金和1重量百分比钯制成，既使当注模树脂封装体5达到大约140℃-160℃的玻璃转换温度时，半导体器件的失效率能够下降。应该注意的是，在已知技术2、3中，半导体器件的失效率都没有明显的降低。
已知技术以100管脚薄型方型扁平封装(TQFP)为例的半导体器件的寿命和失效率如图4A、4B所示，其中电极1a由铝、硅制成，导线3由金或金、铜制成。在图4A中，根据Arrhenius方程，激活能量Ea被定义为：
L＝A+ΔEa/kT
其中L为寿命，
k波尔兹曼常数，
T为绝对温度，
A为常数。
如图5A、5B所示，由于形成了复合层51和肯德尔空隙52，所以上述已知技术的半导体器件的失效率降低。即，在高温条件下，电极1a的铝组分与导线3的金组分之间相互作用产生一种紫斑复合层51或类似物质，使电极与导线之间的键合强度降低。在最坏的情况下，由于产生了肯德尔空隙52，因此使导线3与电极1a分离。
在本发明的第一实施例的剖视图6A中，电极1a’由铜和铝组成，其中铜大约占0.1-10重量百分比，其余部分基本上为铝，导线3’由钯和金组成，其中钯大约占0.5-5重量百分比，其余部分基本上为金。即导线3’的铜组分抑制了电极1a’和导线3’之间复合层的形成。注意如果导线3’中的铜组分含量超过10个重量百分比时，导线3’顶端的铜组分会很容易氧化，很难进行键合操作。
在图6A中，注意电极1a’还可含有少量的硅，而导线3’也还可以含有少量的镧(La)、铈(Ce)、钙(Ca)、或铋(Bi)中的至少一种，并且不影响金属合金的性质。
为图6A的一个变形的图6B中，一突点3’a代替了图6A中的导线3’。在这种情况下，当电极1a’由铜和铝组成时，其中铜大约占0.1-10重量百分比，其余部分基本上为铝，而突点3’a由钯和金组成，其中钯大约占0.5-5重量百分比，其余部分基本上为金。另外，当电极1a’由铜、钯和铝组成时，其中铜大约占0.1-10重量百分比，钯大约占0.5-5重量百分比，其余部分基本上为铝，而突点3’a基本上由金组成。
在图6B中，值得注意的是，所述电极1a’还含有少量的硅，而所述突点3’a也含有少量的镧(La)、铈(Ce)、钙(Ca)、或铋(Bi)中的至少一种，但是不影响金属连接结构的性质。
图7A、7B为本发明以100管脚TOFP为实例的半导体器件的寿命和失效率的图表。也就是说，当电极由铝、硅、铜组成，导线由金组成，温度为150℃时，实例Y1寿命的百万分之10大约是图4A所示实例X1寿命的两倍。另一方面，当电极1a’由铝、硅、铜组成，导线3’由金、钯组成，温度为150℃时，实例Y2寿命的百万分之10大约是图4A所示的实例X1寿命的26倍。由此可见，在金属连接结构中铜和钯的组分明显提高了半导体器件的寿命。
图8A、8B为本发明以208管脚QFP为实例的半导体器件的寿命和失效率的图表。也就是说，当电极由铝、硅、铜组成，导线由金组成，温度为150℃时，实例Z1寿命的百万分之10大约与图4A所示的实例X1和寿命相同。另一方面，当电极1a’由铝、硅、铜组成，导线3’由金、钯组成，温度为150℃时，实例Z2寿命的百万分之10大约是图4A所示的实例X1寿命的10倍。由此可见，在金属连接结构中铜和钯的组合明显也提高了半导体器件的寿命。
在本发明的第二实施例图9A中，电极1a”由两种金属层11、12组成。一种金属层11与电极1a’相似，即由铜和铝组成，其中铜大约占0.1-10重量百分比，其余部分基本上为铝。金属层12由纯钯采用溅射法制成。另外，导线3”基本上由金组成。而且，在第二实施例中，在金属连接结构中，铜和钯的组合抑制了它们之间生长复合层或肯德尔空隙的产生，因此提高了寿命。
为图9A的一个变形的图9B中，一突点3”a代替了图9A中的导线3”。在这种情况下，该突点3”a由金制成。
除了所述的寿命试验外，当进行别的模拟自然环境的可靠性试验时，如温度周期试验和压力锅蒸煮试验试验(PCT)，已知技术及本发明的半导体器件都能够实现，本发明人认为两者之间无本质上的差别。
在上述的实施例中，所述注模树脂封装体5能够由酚醛环氧树脂、联苯基环氧树脂或类似物质制成。进一步在于，本发明能够用于陶瓷封壳型半导体器件或金属封壳型半导体器件。
如上文所述，根据本发明，在电极和导线(或突点)之间，由于铜和钯两者都掺入金属合金中，在它们之间复合层的形成或肯德尔空隙的产生都将受到抑制，因此半导体器件的寿命会明显提高。

Claims (46)

1.一种用于半导体器件焊盘电极的一种金属合金层，由第一和第二两种金属层形成，所述第一金属层由铜和铝组成，其中铜占0.1-10重量百分比，其余部分基本上为铝，所述第二金属层由钯和金组成，其中钯占0.5-5重量百分比，其余部分基本上为金。
2.根据权利要求1所述的金属合金层，其中所述的第一金属层还包括硅。
3.根据权利要求1所述的金属合金层，其中所述的第二金属层还包括镧(La)、铈(Ce)、钙(Ca)、或铋(Bi)中的至少一种。
4.根据权利要求1所述的金属合金层，其中所述半导体器件的每一个电极都含有所述第一金属层，所述半导体器件的每一个导线都含有所述第二金属层。
5.用于半导体器件的一种金属合金层，由铜、钯和铝组成，其中铜占0.1-10重量百分比，钯占0.5-5重量百分比，其余部分基本上为铝。
6.根据权利要求5所述的金属合金层，进一步还含有硅。
7.根据权利要求5所述的金属合金层，进一步还含有镧(La)、铈(Ce)、钙(Ca)、或铋(Bi)中的至少一种。
8.根据权利要求5所述的金属合金层，可用于所述半导体器件的每一个电极。
9.用于半导体器件的一种金属合金层，由第一、第二、第三金属层(11、12、3”)组成，所述第一金属层由铜和铝组成，其中铜占0.1-10重量百分比，其余部分基本上为铝，
所述第二金属层基本上由纯钯组成，
所述第三金属层基本上由金组成。
10.根据权利要求9所述的金属合金层，其中所述第一金属层还包括硅。
11.根据权利要求9所述的金属合金层，其中所述第三金属层还包括镧(La)、铈(Ce)、钙(Ca)、或铋(Bi)中的至少一种。
12.根据权利要求9所述的金属合金层，其中所述半导体器件的每一个电极都含有所述第一和第二金属层，而且所述半导体器件的每一个导线含有所述第三金属层。
13.用于半导体器件的一种金属合金层，由第一、第二金属层(11、12)组成，所述第一金属层由铜和铝组成，其中铜占0.1-10重量百分比，其余部分基本上为铝，
所述第二金属层基本上由纯钯组成。
14.根据权利要求13所述的金属合金层，其中所述第一金属层还包括硅。
15.根据权利要求13所述的金属合金层，其中所述第二金属层还包括镧(La)、铈(Ce)、钙(Ca)、或铋(Bi)中的至少一种。
16.根据权利要求13所述的金属合金层，用于所述半导体器件的每一个电极。
17.一种半导体器件，包括：
一半导体焊盘(1)；
电极(1a’)形成于半导体焊盘上，所述每个电极都包括第一金属层铜和铝，其中铜占0.1-10重量百分比，其余部分基本上为铝；而且
与所述电极连接的导线(3’)由第二金属层钯和金组成，其中钯占0.5-5重量百分比，其余部分基本上为金。
18.根据权利要求17所述的器件，其中所述第一金属层还包括硅。
19.根据权利要求17所述器件，其中所述第二金属层还包括镧(La)、铈(Ce)、钙(Ca)、或铋(Bi)中的至少一种。
20.根据权利要求17所述的器件，进一步还包括用于封装所述半导体焊盘的树脂注模层(5)，所述电极和导线，所述树脂注模层具有比160℃低的玻璃转换温度。
21.根据权利要求17所述的器件，进一步还包括一用于封装半导体焊盘的陶瓷封壳，所述电极和所述导线。
22.根据权利要求17所述的器件，进一步还包括一用于封装半导体焊盘的金属封壳，所述电极和所述导线。
23.一种半导体器件，包括：
一半导体焊盘(1)；
电极(1a’)形成于半导体焊盘上，所述每个电极都包括第一金属层铜和铝，其中铜占0.1-10重量百分比，其余部分基本上为铝；而且
与所述电极连接的突点(3a”)由第二金属层钯和金组成，其中钯占0.5-5重量百分比，其余部分基本上为金。
24.根据权利要求23所述的器件，其中所述第一金属层还包括硅。
25.根据权利要求23所述的器件，其中所述第二金属层还包括镧(La)、铈(Ce)、钙(Ca)、或铋(Bi)中的至少一种。
26.根据权利要求23所述的器件，进一步还包括用于封装半导体焊盘的树脂注模层(5)，所述电极和所述突点，所述树脂注模层具有比160℃低的玻璃转换温度。
27.根据权利要求23所述的器件，进一步还包括一用于封装半导体焊盘的陶瓷封壳，所述电极和所述突点。
28.根据权利要求23所述的器件，进一步还包括一用于封装半导体焊盘的金属封壳，所述电极和所述突点。
29.一种半导体器件，包括：
一半导体焊盘(1)；
电极(1a’)形成于半导体焊盘上，所述每个电极都包括第一金属层铜、钯和铝，其中铜占0.1-10重量百分比，钯占0.5-5重量百分比，其余部分基本上为铝；而且，
与所述电极连接的突点(3’a)由基本上为金的第二金属层组成。
30.根据权利要求29所述的器件，其中所述第一金属层还包括硅。
31.根据权利要求29所述的器件，其中所述第二金属层还包括镧(La)、铈(Ce)、钙(Ca)、或铋(Bi)中的至少一种。
32.根据权利要求29所述的器件，进一步还包括用于封装半导体焊盘的树脂注模层(5)，所述电极和所述突点，所述树脂注模层具有比160℃低的玻璃转换温度。
33.根据权利要求29所述的器件，进一步还包括一用于封装半导体焊盘的陶瓷封壳，所述电极和所述突点。
34.根据权利要求29所述的器件，进一步还包括一用于封装半导体焊盘的金属封壳，所述电极和所述突点。
35.一种半导体器件，包括：
一半导体焊盘(1)；
电极(1a’)形成于半导体焊盘上，所述每个电极都包括第一金属层(11)和在第一金属层上的第二金属层(12)，第一金属层中铜占0.1-10重量百分比，其余部分基本上为铝，第二金属层基本上由钯组成，而且
与所述电极连接的导线(3”)基本上由铝组成。
36.根据权利要求35所述的器件，其中所述导线还包括硅。
37.根据权利要求35所述的器件，其中所述第二金属层还包括镧(La)、铈(Ce)、钙(Ca)、或铋(Bi)中的至少一种。
38.根据权利要求35所述的器件，进一步还包括用于封装半导体焊盘的树脂注模层(5)，所述电极和所述导线，所述树脂注模层具有比160℃低的玻璃转换温度。
39.根据权利要求35所述的器件，进一步还包括一用于封装半导体焊盘的陶瓷封壳，所述电极和所述导线。
40.根据权利要求35所述的器件，进一步还包括一用于封装半导体焊盘的金属封壳，所述电极和所述导线。
41.一种半导体器件，包括：
一半导体焊盘(1)；
电极(1a”)形成于半导体焊盘上，所述每个电极都包括第一金属层(11)和在第一金属层上的第二金属层(12)，第一金属层中铜占0.1-10重量百分比，其余部分基本上为铝，第二金属层基本上由钯组成，而且
与所述电极连接的突点(3a”)基本上由铝组成。
42.根据权利要求41所述的器件，其中所述突点还包括硅。
43.根据权利要求41所述的器件，其中所述第二金属层还包括镧(La)、铈(Ce)、钙(Ca)、或铋(Bi)中的至少一种。
44.根据权利要求41所述的器件，进一步还包括用于封装半导体焊盘的树脂注模层(5)，所述电极和所述突点，所述树脂注模层具有比160℃低的玻璃转换温度。
45.根据权利要求41所述的器件，进一步还包括一用于封装半导体焊盘的陶瓷封壳，所述电极和所述突点。
46.根据权利要求41所述的器件，进一步还包括一用于封装半导体焊盘的金属封壳，所述电极和所述突点。
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CN102484080A (zh) * 2009-06-18 2012-05-30 罗姆股份有限公司 半导体装置
CN102484080B (zh) * 2009-06-18 2015-07-22 罗姆股份有限公司 半导体装置
US9780069B2 (en) 2009-06-18 2017-10-03 Rohm Co., Ltd. Semiconductor device
US10163850B2 (en) 2009-06-18 2018-12-25 Rohm Co., Ltd. Semiconductor device

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KR19980071554A (ko) 1998-10-26
CN1197291A (zh) 1998-10-28
US6011305A (en) 2000-01-04
KR100333573B1 (ko) 2002-06-20
JPH10233408A (ja) 1998-09-02

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