TW480632B - Method for producing a flat interface for a metal-silicon contact barrier film - Google Patents
Method for producing a flat interface for a metal-silicon contact barrier film Download PDFInfo
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- TW480632B TW480632B TW088102285A TW88102285A TW480632B TW 480632 B TW480632 B TW 480632B TW 088102285 A TW088102285 A TW 088102285A TW 88102285 A TW88102285 A TW 88102285A TW 480632 B TW480632 B TW 480632B
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- 239000010703 silicon Substances 0.000 title claims abstract description 52
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 51
- 230000004888 barrier function Effects 0.000 title description 15
- 238000004519 manufacturing process Methods 0.000 title description 9
- 239000010936 titanium Substances 0.000 claims abstract description 63
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 57
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims abstract description 53
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 50
- 238000000034 method Methods 0.000 claims abstract description 49
- 239000010941 cobalt Substances 0.000 claims abstract description 46
- 229910017052 cobalt Inorganic materials 0.000 claims abstract description 46
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims abstract description 46
- 239000000758 substrate Substances 0.000 claims abstract description 45
- 239000004020 conductor Substances 0.000 claims abstract description 14
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 181
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 36
- 229910021332 silicide Inorganic materials 0.000 claims description 35
- 238000000137 annealing Methods 0.000 claims description 26
- 230000000739 chaotic effect Effects 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 10
- 239000007789 gas Substances 0.000 claims description 9
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 9
- 229910052721 tungsten Inorganic materials 0.000 claims description 9
- 239000010937 tungsten Substances 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 8
- 239000010931 gold Substances 0.000 claims description 5
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 4
- 238000005516 engineering process Methods 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 4
- 229910052702 rhenium Inorganic materials 0.000 claims description 3
- 239000002356 single layer Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 238000006062 fragmentation reaction Methods 0.000 claims description 2
- 229910052716 thallium Inorganic materials 0.000 claims description 2
- XFXPMWWXUTWYJX-UHFFFAOYSA-N Cyanide Chemical compound N#[C-] XFXPMWWXUTWYJX-UHFFFAOYSA-N 0.000 claims 1
- 229910052778 Plutonium Inorganic materials 0.000 claims 1
- 238000013467 fragmentation Methods 0.000 claims 1
- OYEHPCDNVJXUIW-UHFFFAOYSA-N plutonium atom Chemical compound [Pu] OYEHPCDNVJXUIW-UHFFFAOYSA-N 0.000 claims 1
- 239000010970 precious metal Substances 0.000 claims 1
- 239000004575 stone Substances 0.000 claims 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 claims 1
- 238000001771 vacuum deposition Methods 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 18
- 229910052751 metal Inorganic materials 0.000 description 17
- 239000002184 metal Substances 0.000 description 17
- 239000004065 semiconductor Substances 0.000 description 14
- 229910045601 alloy Inorganic materials 0.000 description 12
- 239000000956 alloy Substances 0.000 description 12
- 229910010303 TiOxNy Inorganic materials 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 229910052757 nitrogen Inorganic materials 0.000 description 9
- 229910000531 Co alloy Inorganic materials 0.000 description 7
- 230000002079 cooperative effect Effects 0.000 description 7
- 229910019044 CoSix Inorganic materials 0.000 description 6
- 229910001069 Ti alloy Inorganic materials 0.000 description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 238000010438 heat treatment Methods 0.000 description 6
- 239000001301 oxygen Substances 0.000 description 6
- 229910052760 oxygen Inorganic materials 0.000 description 6
- 238000012545 processing Methods 0.000 description 6
- NXHILIPIEUBEPD-UHFFFAOYSA-H tungsten hexafluoride Chemical compound F[W](F)(F)(F)(F)F NXHILIPIEUBEPD-UHFFFAOYSA-H 0.000 description 6
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 238000001704 evaporation Methods 0.000 description 5
- 230000008020 evaporation Effects 0.000 description 5
- 235000012239 silicon dioxide Nutrition 0.000 description 5
- 239000000377 silicon dioxide Substances 0.000 description 5
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 4
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 239000011737 fluorine Substances 0.000 description 4
- 229910052731 fluorine Inorganic materials 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910021341 titanium silicide Inorganic materials 0.000 description 4
- 238000002441 X-ray diffraction Methods 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000005540 biological transmission Effects 0.000 description 3
- 230000008569 process Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- 229910000978 Pb alloy Inorganic materials 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 229910021529 ammonia Inorganic materials 0.000 description 2
- 230000006378 damage Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 239000012634 fragment Substances 0.000 description 2
- 238000004377 microelectronic Methods 0.000 description 2
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 239000000523 sample Substances 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 241000251468 Actinopterygii Species 0.000 description 1
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910001020 Au alloy Inorganic materials 0.000 description 1
- 229910018989 CoSb Inorganic materials 0.000 description 1
- 229910018999 CoSi2 Inorganic materials 0.000 description 1
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- WHXSMMKQMYFTQS-UHFFFAOYSA-N Lithium Chemical compound [Li] WHXSMMKQMYFTQS-UHFFFAOYSA-N 0.000 description 1
- 235000010627 Phaseolus vulgaris Nutrition 0.000 description 1
- 244000046052 Phaseolus vulgaris Species 0.000 description 1
- 229910000691 Re alloy Inorganic materials 0.000 description 1
- 229910000676 Si alloy Inorganic materials 0.000 description 1
- 229910008479 TiSi2 Inorganic materials 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000009825 accumulation Methods 0.000 description 1
- 238000004220 aggregation Methods 0.000 description 1
- 230000002776 aggregation Effects 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 235000013361 beverage Nutrition 0.000 description 1
- DFJQEGUNXWZVAH-UHFFFAOYSA-N bis($l^{2}-silanylidene)titanium Chemical compound [Si]=[Ti]=[Si] DFJQEGUNXWZVAH-UHFFFAOYSA-N 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000010549 co-Evaporation Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- 230000008570 general process Effects 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000010348 incorporation Methods 0.000 description 1
- 230000009545 invasion Effects 0.000 description 1
- 238000000869 ion-assisted deposition Methods 0.000 description 1
- 230000004298 light response Effects 0.000 description 1
- 229910052744 lithium Inorganic materials 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 238000005289 physical deposition Methods 0.000 description 1
- 231100000572 poisoning Toxicity 0.000 description 1
- 230000000607 poisoning effect Effects 0.000 description 1
- 238000004151 rapid thermal annealing Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 238000010561 standard procedure Methods 0.000 description 1
- 238000004627 transmission electron microscopy Methods 0.000 description 1
- 238000009941 weaving Methods 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28518—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
- H01L21/76841—Barrier, adhesion or liner layers
- H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
- H01L21/76855—After-treatment introducing at least one additional element into the layer
- H01L21/76856—After-treatment introducing at least one additional element into the layer by treatment in plasmas or gaseous environments, e.g. nitriding a refractory metal liner
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/10—Applying interconnections to be used for carrying current between separate components within a device
- H01L2221/1068—Formation and after-treatment of conductors
- H01L2221/1073—Barrier, adhesion or liner layers
- H01L2221/1078—Multiple stacked thin films not being formed in openings in dielectrics
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Plasma & Fusion (AREA)
- Electrodes Of Semiconductors (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Description
Α7
技術領域 、本發=有關在製造半導體積體電路中形成導電觸點之 ' ^ 、 本發明係有關一種形成原子性平坦界面之 方法,該界面可避免導電材料擴散入底下之半導體層。 發明背景 半導體裝g電路速度及密度㈣著裝置垂直尺寸之減小 及隨可靠密度配線之需求而日益增加。垂直尺寸減小產生 更淺薄之裝置接合。 在和to電路加工中,個別裝置(由矽所構成)係藉隨後之 金屬層連接至電路上。由於金屬/々接合易產生某種問題在 製程中須加以注意,因此對金屬與矽界面須投以更大管 理。兩個此種問題爲可能看似開放電路之高電阻連接及因 接觸金屬而使裝置毒化。 經濟部中央標準局員工消費合作社
:——:-I €1 (請先閱讀背面之注意事項再填寫本百C 訂 在形成相互接點中,在絕緣層中(一般爲二氧化矽)形成 接觸孔,以曝露底下之半導體基材,一般爲設有P-阱中之 N+區域或設在阱之p+區域。爲了形成相互接點,藉標 準技術於接觸孔中澱積適宜金屬。若金屬直接與半導體基 材接觸,則金屬在隨後裝置加工期間,尤其是在裝置包裝 期間遭遇之高於4〇〇χ:之溫度下,會擴散入半導體中。 擴散產生金屬釘入半導體中。釘入典型上延伸八半導體 内小於約0.5微米,且因此當裝置厚度大於〇 5微米時不構 成特別問題。但對其中裝置小於〇·5微米厚之高密度電路而 言’針入可縮短金屬與底下之ρ·阱或Ν-阱之距離,而使裝 置無法操作。 ^紙張尺度&侧辦(⑽21()><2947公羡) 經濟部中央標準局員工消費合作社印製 480632 A7 ___ B7 五、發明説明(2 ) 金屬矽化物一般用以提供對裝置接合之良好電阻觸點。 石夕化鈥(TiSi2)由於其低電阻性,其自動之能力及其相 對良好之熱安定性,而變爲ULSI工業中矽化物應 用之最廣爲使用之矽化物。鈦係藉由標準澱積技術沉積入 觸點孔洞中。矽化作用係藉隨後使基材及金屬加熱至約 500°C至700X:而進行。 爲了使接合點滲漏最小,裝置接合點須維持在矽化物下 方。此距離由澱積在觸點孔洞中之金屬量,加熱期間消耗 之梦量及加熱期間反應前平坦性而決定。消耗之碎量係由 所形成之矽化物化學計量及晶體結構以及藉由退火時間及 退火溫度所決定。對矽化鈦而言,金屬對矽之莫耳比爲2 比1。石夕化物反應前端之平坦性係由許多變數控制,如金 屬澱積前之矽表面清潔性及反應溫度。典型之半導體製造 順序產生非平坦之光邵反應前端。接合點深度可使用消耗 較少矽及/或產生更幾近平坦之反應前端之矽化製程作得更 淺薄。 爲了避免擴散,許多半導體織造順序使用金屬與矽基材 間之擴散障壁。一般製程順序中,氮化鈦係使用作爲抗六 氟化鎢侵襲及抗鎮殿積期間氟(普遍使用之導電材料)之侵 襲、抗六氟化鎢化學蒸鍍之侵襲之障壁。形成氮化鈦障壁 之較佳方法爲在含氮氣體如氮氣、氨蒸汽或形成氣體中進 行碎化反應。氮化鈦係與矽化鈦同時形成。 所得界面之剖面圖形限制了此方法於發展更小更淺薄接 合點裝置之利用性。此方法包含於非常窄區域内之競 (請先閲讀背面之注意事項再填寫本頁}
480632 A7 B7 五、發明説明(3 應,自上述形成Ti〇xNy及自下列形成训2。因此難以控制 雙層之層厚度且該層典型上缺乏氮。珍化氮層之形成自基 材消耗矽並且層可相接(Clisped)。 矽化鈦與矽間之粗界面對淺薄接合點或小裝置而言並不 佳。該層爲鎢化學蒸鍍期間抗侵襲之不可靠障壁,其可引 起鎢侵蝕及殘害孩裝置。雖然層之障壁性質可藉鈦澱積期 間及隨後退火之氧併入而改良,但仍留有Ti〇xNy層厚度不 均勻之問題,其降低其作用障壁之效率。
Nishio之USP 5,567,652揭示一種方法,其中(1)在矽基材 表面上形成二氧化矽層;(2)在氧化物層上澱基鈦層;(3) 在鈦層上澱積鈷層;及(4)於含氮氣體中加熱處理該基材。 加熱處理時,鈦與二氧化矽反應而在界面形成碎。接著, 有些鉛經由鈦移動而在界面形成CoSi2層。在界面形成之 C 〇 S i_2層反映与7基材之晶體取向’因此’在界面形成非常平 坦CoSb層。然而須於此方法加工順序中加入數個額外步 驟。首先,須形成二氧化矽層。需個別澱積鈦層及姑層兩 金屬層以取代單金屬層。熱處理後,需移除熱處理期間形 成之含氧之氮化鈦層及金屬澱積在CoSh層上之前之未反應 姑層兩者。移除各該等層需要個別步驟。
Wei之USP 5,047,367揭示一種形成氮化鈦/矽化鈷雙層之 方法,係(1)在矽層上澱積鈦層;(2)在鈦層上澱積鈷層; 及(3)於含氮氣體中退火。需要殿積錯層之額外步驟且退火 最終溫度高約850至950°C。 因此,需要一種形成障壁層及矽化物層之方法,其中(1) __- 6 -___- —__ 本紙張尺度適用中國國家標準(CNS ) A4規格(2297公褒)
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*1T 經濟部中央標準局員工消費合作社印製 480632 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明(4 矽化物層之形成比二矽化物消耗更少之矽;(2)在碎化物層 與矽基材間形成之界面爲平坦界面,較好爲原子性平坦界 面;及(3)障壁層厚度均勻。此外,此方法須易整合成目前 用以形成半導體裝置之程序,且較好不須加入額外加工步 驟。 發明概述 本發明係有關一種形成具低觸點電阻之電相互連接之半 導體裝置之方法及形成可避免不期望擴散入矽基材之障壁 層之方法。該方法包括: a) 在矽基材上澱積一層實質上由姑及鈥構成之層,其中 該層中姑之存在量不超過層中存在之鉛與敫總量之2〇 原子% ; b) 在約500 C至約700 °C下於含氮氣體中使基材及層退 火;及 c) 在該層中澱積導電材料。 此方法在矽化物及矽基材間形成原子性平坦界面。此平 坦界面對非常小裝置及淺薄接合點之觸點具重要性,如 ULSI淺薄接合點所需者。此方法所形成之均勻Ti〇xNy(氧 氮化鈥’鈥氧氮化物)爲鎢化學蒸鍍期間抗六氟化鎢及氟侵 襲之良好障壁。 雖未受理論限制,但相信飲/姑合金層中之鈷在退火期間 扮演兩個角色。首先,鈷移至矽表面並使矽化物形成變 慢。第二,由於鈷與鈦原子原子半徑及電子結構兩者之差 異’該等原子各不同地鍵結至矽上。鍵結至矽上之此差異 (210X297公釐) ‘(請先閱讀背面之注意事項再填寫本頁) %·
、1T 480632 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(5 ) 將破壞石夕化物晶體之長範圍空間及電子周期性並可形成高 度混亂之毫微結晶及/或非晶形矽化物。該高度混亂之矽化 物又在碎與矽化物間形成原子性平坦界面。高度混亂之矽 化物亦引致形成均勻厚度之Ti〇xNy層。因此,可產生矽抗 金屬或氟侵襲之更可靠障壁。此外,形成更適於淺薄接合 點應用之觸點之更佳控制之矽化物界面。 另一具體例中,本發明係有關在矽基材與其鄰接層間之 界面爲原子性平坦之觸點。又另一具體例中,本發明係有 關藉本發明方法形成之觸點。 圖式開早説明 本發明可由下列描述及附圖而更完全了解: 圖1顯示其上形成有鈥/姑合金層之矽基材剖面圖。 圖2顯示退火時形成之多層結構之剖面圖。 圖3顯示退火時形成之多層結構剖面圖之透射電子顯微鏡 照片。 圖4顯示退火時形成之多層結構剖面圖之更高倍放大之透 射電子顯微鏡照片。 發明詳細説明 本發明係一種用於自動排列珍化物中並經由填入作爲觸 點之矽基材與(Ti,Co)Six/TiOxNy層間形成原子性平坦界 面之方法。該層作爲随後加工步驟期間抗矽基材上侵襲之 障壁’如隨後自六氟化鎢之鎢化學蒸鍍期間受六氟化鎢及 氟侵襲之障壁。 參見圖1,矽基材1 〇可爲單晶或多晶矽。使用本技藝悉 ___ ___- 8 - (請先閱讀背面之注意事項再填寫本頁) 鳜 訂 480632 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(6 ) 知之方法,例如述於微電子製造科學及工程(The Scifinr_p ——Engineering of Microelectronic Fabrication、 s. A. Campbell,牛津大學出版社,紐約,1996者,可藉由在需 要連接之矽基材區域上之介電層中形成觸點孔洞或via而提 供矽基材。典型上,該觸點孔洞係在設於P—阱之N+區域或 設在N·阱之P +區域上形成。 藉本技藝悉知數種技術之任何一種在矽基材表面上澱積 鈦/鈷合金層1 2。澱積技術包含例如物理蒸鍍、化學蒸 鍍、電漿加強之化學蒸鍍、閃光蒸發、濺鍍、電子束蒸發 及離子輔助澱積。眞空澱積之設備及技術爲本技藝悉知 者。 敌及姑可自不同來源或自亦含鈷之鈦來源澱積。例如若 藉賤鍍澱積該層,則製備鈦及鈷之濺鍍標的,使得在矽基 材上殿基含所需原子百分比姑之鈥層。或者,可藉共賤鍍 鈥及姑澱積該層’使得在硬基材上澱積含所需原子百分比 之鈷之鈦膜。當使用物理蒸鍍之澱積製程時,鈦及鈷以適 當比例自兩個不同來源澱積以達所需原子百分比之鈷。本 技藝悉知之其他製程亦可用以澱積鈦/鈷合金層12。 飲/銘5金層12中銘存在量不超過該層中存在之姑與鈥總 量之約20原子%,一般約〇^至約2〇原子%鈷。此層較好含 有約1至約1 0原子❶/。鈷,更好約3至約7原子%且最好約5原 子%姑。 ' 献/鉛合金層12—般厚度約5毫微米至約15〇毫微米,較 好約5笔微米至約3 〇毫微米,更好約5亳微米至約2 〇亳微 (請先閱讀背面之注意事項再填寫本頁)
經濟部中央標準局員工消費合作社印製 A7 B7 1、發明説明(7) 米。最好,此鈦/鈷合金層約6毫微米至約1〇毫微米厚。 澱積鈦/鈷合金層12後,基材1〇與層12在含氮氣體如氨 蒸氣、形成氣體(氮與氫之混合物)或氮氣中退火。時間及 溫度係選擇至確使形成(Ti,Co)Six及TiOxNy層。退火可在 約500 °C至約700 °C進行約0.5小時至約2小時。高於約700 °C,觀察到(Ti,Co)Six凝集。退火較好在約550°C進行約 0.5小時。退火可藉本技藝悉知之方法進行,如於習知退火 爐中或藉由快速熱退火。 圖2顯不退火時形成之多層結構。此多層結構由砍基材 10,CoSix 層 14,高度混亂之(Ti,Co)Six 層 16 及 TiOxNy 層1 8所構成。 退火最初階段期間,鈥/鉛合金層12中存在之欽移除在石夕 基材1 0表面上存在之任何二氧化>5夕。通常此氧化物層僅約 0.1至0.5毫微米(1至5A)厚。二氧化矽溶入鈦中。隨後藉 生長矽化物層至TiOxNy層1 8中而驅出氧。 退火期間,(鈦/鈷)合金中之鈷移至矽/(鈦/鉛)合金界 限’同時♦及(鈥/鉛)合金形成合金硬化物。在 (Ti,Co)Six層中,姑朝石夕與合金梦化物層間之界面分離並 在矽與合金矽化物層間之界限形成CoSix層14。餘梦化物層 1 4相信爲約單層厚。此已藉透射電子顯微鏡分析、毫微探 針電子能量喪失分光計及能量散亂X-射線分析偵測。 矽化物層中殘留之鈷破壞產生高度混亂之矽化物層之長 範園空間及電子週期性。”高度混亂”意指(丁丨,€〇)8匕層16 爲愛微結晶及/或非晶形。如本技藝悉知者,亳微結晶音指 -10- 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) (請先閱讀背面之注意事項存填寫本頁) €
tT 480632 經濟部中央標準局員工消費合作社印製 、發明説明(8 在層中有些許局部化短範圍次序,一般約數毫微米,而非 晶形意指在大於數埃之層中並無次序。高度混亂之 (Tl,C〇)Six層16引致矽基材1〇與高度混亂矽化物層16間 形成原子性平坦界面。 由於退火期間姑分離,於高度混亂之(Ti,C〇) Six層1 6中 又鈷量大於鈦/鈷合金12中存在之量。高度混亂之矽化物 層1 6中鈷量一般約〇.2至約3 5原子%,較好約2至約丨5原子 /〇 ’更好約5至約1 0原子%且最好約8原子%,以層1 6中始 與鈦存在之總量爲準。若合金層12中鈷量約層12中存在之 鈷與鈦總量之約5原子%,則層16中鈷量一般約爲層16中 鈷與鈦存在總量之8原子%。 高度混亂之(丁込(:〇)8“層16—般略大於鈦/鈷合金層12 厚度之一半。(Ti,Co)Six層一般厚度約3亳微米至約6〇毫 微米,較好約3耄微米至約2 〇毫微米,更好約3毫微米至約 12毫微米。最好,該層約4毫微米至約7亳微米厚。當合金 層1 2約9毫微米厚,則高度混亂之矽化物層1 6 一般約5毫 微米厚。雖然X確實値視層所形成之條件而定(如層12中2 量’層12厚度’退火溫度等),但X値介於1至2之間。 鈦/鈷合金層中之鈦與含氮氣體中之氮及存在於層表面上 之氧反應而形成TiOXNy層1 8。由於秒基材鱼(rpi c 層1 6間之原子性平坦界面,TiOxNy層1 8厚度非常均勺 ^ 使得於隨後加工步驟中抗金屬及氟侵襲之隆辟$ = ^ 〜丨罕璧更具可靠 性。
TiOxNy層18—般略小於鈥/姑合金層12厚户+ . 于一半。鈦 •11 - 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇x297公釐) m- m m n —i IIn - u 3 (請先閲讀背面之注意事項再填寫本頁} 訂 糊632 A7
氧氮化物(鈦氧氮)層18—般厚度約2亳微米至約4〇毫微 米,較好約2耄微米至約1 5毫微米,更好約2毫微米至約8 亳微>米。最好該層約3毫微米至約6亳微米厚。當合金層12 '、、勺9毫微米厚,則鈥氧氮化物層丨8 一般約4毫微米厚。 X及y値視反應條件而異且一般隨層剖面而變。典型上, 靠近與高度混亂之(Ti,Co)Six層之界面之氧量大於表面上 乏氧量,且表面上之氮量大於靠近與層16之界面之氮量。 退火後,須移除退火時形成之任何層。可藉本技藝悉知 之方法直接在界面上端澱積導電材料。一般之導電材料包 含例如鎢、鋁、銅、金、妲、鋁/銅合金及鋁/矽/銅合金。 較佳之導電材料爲鎢。鎢可藉六氟化鎢(Wh)之化學蒸鍍 法澱積。 此方法可整合入現行使用由未摻雜鈦所形成之鈦矽化物 層之半導體製造技術中。 工業用途 經濟部中央標準局員工消費合作社印裝 ! : — .%! (請先閱讀背面之注意事項再填寫本頁) 、11 本發明可用於製造半導體裝置,其可用於例如數位電 細。此方法產生鎢障壁柱塞膜之原子性平坦界面,其可提 供ULSI淺薄接合點之改良柱塞。此接合點可用以形成半導 月豆裝置之源極/没極元件。 本發明之優異性質可藉參考下列説明用之實施例看出, 惟不用以限制本發明。 實例 此實例描述藉本發明方法製造界面。矽基材1〇未摻雜約 0.7耄米厚之單晶矽。然而可使用摻雜矽及複晶矽,一般爲 -—---------- 12 本紙張尺^Tiii^T^7X^Fr21()x297公羡)-—- 480632 A7 _______B7___ 五、發明説明(10 ) 設於P·阱中之N +區域或設於N -阱中之P +區域。藉共蒸發 法在石夕基材上殿積含鉛之鈥層。此層含5原子%録且爲 耄微米厚。此基材在氮氣中於55〇°C退火0.5小時。退火於 習知退火爐中進行。 所得結構含TiOxNy層18,高度混亂之(Ti,C〇)Six層16, CoSix層14及矽基材1〇。該結構以TEM成像、具能量散亂 X -射線之毫微米探針分析T E Μ及電子能量喪失分光計、俄 歇(Auger)及X-射線繞射分析。 退火時形成之多層結構剖面之透射電子顯微鏡分析示於 圖3及圖4。可見到石夕基材1〇、coSix層14、高度混亂之 (Ti,Co)Six層16及Ti〇xNy層18。如圖中所示,<:〇8匕層 14爲約單層厚,厚度約0.63毫微米(6.3A)且爲原子性平坦 者。亦可見到矽基材10與CoSix層14間之平坦界面及 CoSix層14與高度混亂之(Ti,Co)Six層16間之平坦界面。
CoSix層14亦可藉毫微米探針電子能量喪失分光計及能 量散亂X-射線分析偵測。 經詳述本發明後,本發明主張下列申請專利範圍及其對 等物。 (請先閲讀背面之注意事項再填寫本頁) %·
、1T 經濟部中央標準局員工消費合作社印裝 ________-13- 本紙張尺度適用中國國家標準(CNS ) A4規格(21〇X297公釐)
Claims (1)
- 480632第88102285號專利申請案 中文申請專利範圍修正本(9〇年12月) 六、申請專利範圍 1· 一種觸點,依序包括: a) 矽基材; b) 鈷矽化物層; Ο含鈦、鈷及矽之高度混亂之矽化物層;及 d)鈦氧氮化物層; 其中矽基材與鈷矽化物層間之界面為原子性平坦者。 2·根據申請專利範圍第丨項之觸點,其中鈷矽化物層為約單 層厚且為原子性平坦者。 3.根據申請專利範圍第2項之觸點,其中欽氧氮化物層具均 勻厚度。 4·根據=請專利範圍第3項之觸點,其中高度混亂之梦化物 層為t微米結晶且主要由鈦、鈷及矽所構成。 5. 根據申請專利範圍第3項之觸點,其中高度混亂之石夕化物 層為非晶形且主要由鈦、鈷及矽所構成。 6. 根據中請專利範圍第3項之觸點,其中高度混亂之碎化物 層包括切化物層中存在之話及欽總量之約2至約㈣ 子% 〇 7·根據申請專利範圍第6項之觸點,其中: 矽基材為設於P-阱中區域或設於N_阱中之p+區 域; 該高度混亂矽化物層主要由鈦、鈷及矽所構成; 該高度混亂之矽化物層約3毫微米至2〇毫微米厚;及 孩鈦氧氮化物層約2毫微米至約15毫微米厚。 8·根據中請專利範圍第7項之觸點,其中高度混亂之梦化物層含有佔矽化物層中之存在之姑與 原子%铦。 鈇總量之約5至约9. 根據申請專利範圍第1項之觸點,又包括 e)導電材料層; 且與高度混亂之今 其中導電材料層相鄰於鈦氧氮化物層 化物層具相反側。 ^據中請專利範圍第9項之觸點,纟中導電材料係 呂、銅'金、42、銘/銅合金及銘…銅合金所組成 其中導電材料為鎢。 其中鈦氧氮化物層具 U·根據申請專利範圍第i 0項之觸點 12·根據申請專利範圍第1 1項之觸點 均勻厚度。 13·根據申請專利範圍第12項之觸點,其中該高度混孤切 化物層為毫微米結晶且主要由鈦、鈷及 14. 根據申請專利範圍第12項之觸點,其中高度混亂切化 物層為非晶形且主要由鈦、鈷及矽所構成。 15. 根據申請專利範圍第1 2項之觸點,其中·· 該高度混亂之矽基材為設於阱中之N+區域或設於 阱中之P+區域; ' 該碎化物層主要由鈥、鉛及;5夕所構成; 該高度混亂之矽化物層含有佔矽化物層中存在之鈷及 鈦總量之約2至約1 5原子%鈷; 該高度混亂之矽化物層為約3毫微米至2〇亳微米厚;及 該鈦氧氮化物層為約2毫微米至約丨5毫微米厚。 -2 -、申請專利範圍 16· —種形成具有平坦界面之導電觸點的方法,包括: a) 在石夕基材上澱積主要由鈷及鈦所構成之層,其中該 層中存在之鈷量不超過該層中存在之鈷與鈦總量之約2〇 原子% ;及 b) 在含氮氣體中於約5〇0艺至約7〇(rc之下使該基材 與該層退火。 ι 17·根據申請專利範圍第16項之方法,其中該層約5毫微米 至約100亳微米厚。 队,據申請專利範圍第丨7項之方法,其中該層中存在之鈷 量為佔該矽化物層中存在之鈷與鈦總量之約丨至約1 〇 子%。 ’、 19·根據申請專利範圍第18項之方法,其中該層約$毫微米 勺20毛微米厚,且其中该層存在之鈷量佔該矽化物層 中存在之鈷與鈦總量之約3至約7原子%。 2〇·根據申請專利範圍第㈠項之方法,其中該層約6毫微米 至約ίο毫微米厚,其中該層中存在之鉛量為約5原子%, 且其中退火係在約550它進行約〇·5至2小時。 21·根據申請專利範圍第16項之方法,在步驟b)後,又包 括* : c) 在該層上澱積導電材料。 22.根據申請專利範圍第21項之方法, 至約100毫微米厚。 W 申請專利範圍第22項之方法,其中該層中存在之始 I為佔孩矽化物層中存在之鈷與鈦總量之約丨至约1〇原 — ___ - 3 _ 本紙張尺度適用巾g國豕標準(CNS) ^規格(灿〉〈297公董)予 〇/〇 ο 據申叫專利範圍第2 3項之方法,纟中係藉真空澱積技 術澱積鈷及鈦層。 25·,據申請專利範圍第21項之方法,Λ中該層約5毫微米 力20¾微米厚,且其中該層中存在之鉛量為佔該矽化 勿層中存在之話與鈦總量之約3至約7原子%。 26.根據申請專利範圍第25項之方*,其中石夕基材為設於p_ 阱中之N+區域或設於N -阱中之P+區域。 據申叫專利範圍第2 6項之方法,其中導電性材料為 鶴0 艮據申請專利範圍第㈣之方法,其中該層約5毫微米 至約100毫微米厚,且其中該層中存在之姑量為佔該珍化 物層中存在之鈷與鈦總量之約1至約1 〇原子%。 29.根據申請專利範圍第28項之方法,其中該層約5毫微米 至約20毫微米厚,且其中該層中存在之姑量為佔該碎化 物層中存在之鉛與鈇總量之約3至約7原子%。 3〇·根據中請專利範圍第29項之方法’纟切基材為設於卜 畔中之N +區域或設於N -阱中之p+區域。 31·根據申請專利範圍第3〇項之方法,纟中該層約6毫微米 至約10毫微米厚,其中該層中存在之鈷量為約5原子%且 其中退火係在約550°C進行約0.5至2小時。 -4 - 本紙張尺度適用中國國家標準(CNS) A4規格(210X297公釐) _ 一— --
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US09/025,718 US6022801A (en) | 1998-02-18 | 1998-02-18 | Method for forming an atomically flat interface for a highly disordered metal-silicon barrier film |
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JP3199015B2 (ja) * | 1998-02-04 | 2001-08-13 | 日本電気株式会社 | 半導体装置及びその製造方法 |
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JP4680433B2 (ja) * | 2001-07-04 | 2011-05-11 | ルネサスエレクトロニクス株式会社 | コンタクト形成方法、及び半導体装置の製造方法 |
US6953730B2 (en) * | 2001-12-20 | 2005-10-11 | Micron Technology, Inc. | Low-temperature grown high quality ultra-thin CoTiO3 gate dielectrics |
US6794753B2 (en) * | 2002-12-27 | 2004-09-21 | Lexmark International, Inc. | Diffusion barrier and method therefor |
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US5828131A (en) * | 1993-10-29 | 1998-10-27 | International Business Machines Corporation | Low temperature formation of low resistivity titanium silicide |
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JP2891092B2 (ja) * | 1994-03-07 | 1999-05-17 | 日本電気株式会社 | 半導体装置の製造方法 |
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US6022801A (en) | 2000-02-08 |
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