TW469606B - Semiconductor package structures using epoxy molding compound pads and a method for fabricating the epoxy molding compound pads - Google Patents

Semiconductor package structures using epoxy molding compound pads and a method for fabricating the epoxy molding compound pads Download PDF

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Publication number
TW469606B
TW469606B TW87105206A TW87105206A TW469606B TW 469606 B TW469606 B TW 469606B TW 87105206 A TW87105206 A TW 87105206A TW 87105206 A TW87105206 A TW 87105206A TW 469606 B TW469606 B TW 469606B
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Taiwan
Prior art keywords
emc
pad
item
patent application
manufacturing
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Application number
TW87105206A
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English (en)
Inventor
Shi-Baek Nam
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Samsung Electronics Co Ltd
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Publication of TW469606B publication Critical patent/TW469606B/zh

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
  • Die Bonding (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

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606 A7 __B7 五、發明説明（i ) 本發明關於一種半導體封裝體結構，並特別關於一種 包括了集成一體之MOSFET與控制用1C的半導體封裝體 結構，其中控制用1C使用環氧樹脂模製化合物（EMC)墊 在控制用1C與導線框之間被附著至導線框，以及一種製 造EMC墊的方法。 由於較小及較輕的電子產品之趨勢 > 它們的半導體零 件之數目變成較少並且高密度的固定封裝體已經持續地發 展中。切換模式電源供應（SMPS)是一種用以滿足上述及 其它近來趨勢之方法。在SMPS中，在操作期間需要大量 的功率及發出大量的熱之半導體元件，亦即當做功率電晶 體之MOSFET以及供控制MOSFET用的控制用1C，被集 成於單一封裝體中以及密封性地密封。 依據該方法，首先，比如MOSFET之切換元件以及 控制用1C彼此被以導線接著*故它們能彼此溝通。第 二*週邊元件之功能被插入至控制用1C中。切換元件及 控制用1C被集成一體而位於單一封裝體中。 經濟部中央橾準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 尤其，在發展此一封裝體時*使用絕緣的黏著材料在 控制用1C與作爲切換元件的MOSFfT其汲極之間預防短 路。 已經提供了各種增強絕緣旳黏著材料其介電強度之方 法。 第1圖是由本發明之發明者公開。ώ第1圖中所示， 例如Si3N4層（未繪示出）之SixNy層被施加至厚度多達2至 5 μιη之晶圓的背面。通常，該層一次大約被沉積於 本紙張尺度關中賴緖_ ( GNS ) Α4·_ ( 2丨以297純）.4 - 469606 A 7 B7 _ 五、發明说明（2 .) 是，能夠依據所要的厚度而減少或增加施工的次數。所 以，晶圓被分割成個別的控制用1C 1。分割的控制用1C 1被使用避廬.的環，.氣樹脂黏著材料3固定至印模墊5的一部 份*在印模墊5的其它部份上，MOSFET 2被使用遅荖Jlj 黏著材料4固定。1C 1使用金屬導線被連線接著至 MQSFET 2。1C 1與MOSFET 2使用金屬導線被接著至 導線框的內導線。此後，接著施行模製步驟與修飾步驟以 便完成封裝體》 然而*很不容易在晶圓的背面上沉積厚的絕緣材料 層。在晶片被鋸開的情況下·絕緣材料未施加至晶片的側 邊。這造成了減低的介電強度。 經濟部中央標準局肩工消費合作社印繁 (請先閲讀背面之注意事項再，填寫本頁) 第2圓亦由本發明之發明者公開。如第2圖中所示， 控制用1C 1與比如MOSFET或雙載子TR之功率元件2被 固定於導線框之印模墊5上。因爲MOSFET的背面被當做 汲極，功率元件2使用傳導性的昆掇服黏.著材料4被固定 於印模墊5上。另一方面，因爲控制用1C 1應該是電性辑 緣於印模墊5，控制用1C 1使用Μ緣的環氧樹脂黏著材料 3被固定於印模墊5上。在控制用IC 1用的黏著材料中， 亦即絕緣的環氧樹脂黏著材料3中，可加入絕緣小珠9。 絕緣小珠9允許了環氧樹脂黏著材料3精確的厚度調整。 然而，很難找到一種在高溫下具有高介電強度而可供 小珠用的材料。不容易使小珠形成爲不(會導致空隙的球 狀。而且，當提供包括了小珠的黏著材料時，半導體製造 廠無法檢查黏著材料中小珠的存在。 本紙張尺度適用中國國家標準（CNS ) Α4規格{210X 297公釐） 469 606 A7 B7__ 五、發明説明（3 ) 第3圖是一種使用陶瓷墊的半導體封裝體。在控制用 iC 1被固定於印模墊5上之前，陶瓷墊6使用供陶瓷墊6 用的黏著材料7被附著至印模墊5。陶瓷墊6是比如Al2〇3 之陶瓷材料的薄膜。控制甩IC 1藉由陶瓷墊6而絕緣於印 模墊5。結東，能夠獲得足夠的介電強度》 然而，陶瓷墊需要高生產成本。另外，由於陶瓷墊是 薄的，易於因外部衝擊而破裂。- 因此本發明的一目的是提供一種具有足夠的介電強度 之半導體封裝體結構*它能以低成本在傳統的生產設備中 製造。 本發明的另一目的是提洪一種方法用以製造具有上述 使用環氧樹脂模製化合物0\*〇墊之結構的半導體封裝 體。 經濟部中央標準局負工消費合作社印製 (請先閲讀背面之注意事項再填寫本頁) 依據本發明的一論點，半導體封裝體結構包含了至少 —個第一半導體晶片、至少一個EMC墊以及第二半導體 晶片。第一半導體晶片使用傳導性的黏著材料被固定於印 模蟄上。EMC墊使用第一絕緣黏著材料被附著至印模 墊。第二半導體晶片使用第二絕緣黏著材料被固定於 EMC墊上。 第一半導體晶片最好是MOSFET，並且第一與第二 絕緣黏著材料各自包括了環氧樹脂4 EMC墊最好是比第 二半導體晶片更大。EMC墊又最好在^一邊比第二半導 體晶片大lmm β 依據本發明另一論點，製造EMC墊用的方法包含了 本紙張尺度適用中國囷家榡車（CNS ) A4規格（210X297公釐） 606 606 經漪部中央標準局員工消費合作社印製 Α7 Β7 五、發明説明（4 ) 諸步驟：預烘焙預定數目的EMC平板；使用印模按壓平 板，並藉以使平板鑄模成具有預定厚度的EMC墊圖型； 冷卻EMC墊圖型；檢查EMC墊圖型的厚度並且檢查在 EMC墊圖型中是否產生任何空隙：爲了：EMC墊圖型之構 成要素的完整功效而矯正EMC墊圖型；把EMC墊圖型鋸 開成爲各自具有預定大小的EMC墊》 EMC平板最好在大約170 °C被鑄模持續一分鐘。在 四至五次鑄模步驟之後施加蠟至印模表面。 另外-在按壓EMC墊圖型的上方及下方部份時最好 實施冷卻步驟》 製造EMC墊的方法最好更包含一步驟用以在鋸開步 驟之前使延伸膠帶附著至E M C墊圖型之底部。 矯正步驟最好在170 °c被持續實施三小時》 EMC墊圖型最好被鋸開成各自比控制用1C更大的 EMC墊。EMC墊圖型具有0.3mm的厚度以及100mm的 直徑。 第1圖是傳統的半導體封裝體之實施例其橫截面圖； 第2圖是傳統的半導體封裝體另一實施例之橫截面 ISO > 圖， 第3圖是傳統的半導體封裝體又另一實施例之橫截面 圖； 第4圖是依據本發明之半導體封裝體^橫截面圖： 第5A圖是展示依據本發明製造半導體封裝體之方法 的流程圖； 本紙乐尺度適用中國國家標準（CNS ) A4規格（21〇x_ 297公Μ ) ---^-----上 1裝------訂 ^ 線 (請先閱讀背面之注意事項再填寫本頁) 4 6 9 6 0 6 A7 B7 — .广、-'V - ^五、發明説明（5 ) 第5B圖是展示依據本發明製造EMC墊之方法的流程 圖；以及 第6圖是依據本發明製造EMC板用的裝置之槪要的橫 截面圖。 在參考了本發明諸較佳實施例展示於其中的諸附圖之 後，本發明將被更詳細地描述。然而，可甩許多不同的型 式來實施此發明，並且此發明不應被認爲受限於本文中所 陳述的諸實施例；而且，爲了使此申請書淸楚及完整才提 供這些實施例，並且這些實施例將完整地傳達本發明之範 疇予熟悉此技藝者。 第4圖是依據本發明之半導體封裝體的橫截面圖。如 第4圖中所示，比如MOSFET或雙載子TR的功率元件2被 固定於導線框的一部份印樽墊5之上。在印模墊5的其它 部份之上，控制用1C 1利甩在兩者之間的F.MC墊6而被 固定。 經濟部中央標率局負工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁) 尤其，MOSFET 2使用傳導性的焊接劑黏羞鼓料4被 固定於部份的印模墊5之上。已經由EMC樹脂彤成爲具 〇.3mm厚度之EMC墊6在固定控制用1C 1之前使用供 EMC墊6用的黏著材料8被附著至印模墊5的其它部份。 EMC墊是比控制用1C 1更大一些。供EMC墊6用的黏著 材料8通常是環氧樹脂或者聚醯亞胺爲基礎的絕緣黏著材 料。控制用1C 1使用環氧樹脂絕緣黏著^材料3被固定於 EMC墊6上eMOSFET 2與控制用1C 1然後藉由導線10 彼此接著。此後，經過鑄模及修飾步驟，完成了半導體封 本紙张尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -§ - 經濟部中央標率局員工消费合作社印裝 d 6 Ο 6 A7 B7五、發明説明（6 ) 裝體。 第5A圖是展示依據本發明製造半導體封裝體之方法 的流程圖。第5B圖是展示用以製造在製造本發明的半導 體封裝體中所用的EMC墊之方法其流程圖。 參考第5A圖，在步驟S10，例如MOSFET 2的功率 元件使用傳導性的焊接劑黏著材料4被固定於導線框部份 的印模墊5之上。 在步驟S2〇，EMC墊6使用絕緣的黏著材料8，例如 環氧樹脂或者聚醯亞胺爲基礎的黏著材料，被附著至印模 墊5的其它部份。EMC墊6已經由其它程序事先製造。預 製的EMC墊6使用傳統的印模接著器被傳送並附著至印模 墊5。製造EMC墊6的方法將於稍後加以描述》 在EMC墊6被附著之後，控制用1C 1在步驟S3 0使用 環氧樹脂絕緣的黏著材料3被固定於EMC墊6上。 此後，在步驟S40，MOSFET 2與控制用1C 1藉由 導線彼此接著。所有的上述部份在步驟S50由環氧樹 脂鑄模，這隨後是修飾步驟S60。結果，完成了半導體封 裝體。 參考第5B及6圖，描述依據本發明之用以製造在製造 半導體封裝體中南用EMC墊的方法。 第一，爲了製造具有預定厚度及預定盍徑的EMC 墊，預定數目的平板在微波爐等中被預供^焙大約一分鐘， 這顯示爲第5B圖中步驟S120。例如，如果使用各自具有 100mm直徑及〇.3mm厚度的平板，用以製造EMC墊圖 J- — ：------1' -裝——^----訂-----人沭 (請先閱讀背面之注意事項再填寫本頁) 表紙张尺度適用中國國家標準（CNS ) A4規格（210X 公釐） 606
經濟部中央橾準局員工消費合作社印製 五、發明説明（7 ) 型之預定數目的平板其重量大約爲3.2到3.8g。另外，爲 了在印模附著期間內易於拾起，平板中所用之材料最好使 用白色的。 預烘焙的平板被置於鑄模的下方印模12上，並且藉 由使用上方印模11按壓而被鎮成預定的形狀，例如依_據 本發明一實施例的晶圓之形狀，這顯示爲第5B圖中步驟 S122。如第6圖中所示，由彈簧16支撐的可移式印模19 是位在下方甶模12的中心，加熱器I4安裝於可移式印模 內。通常’可移式印模19的表面接觸了下方印模】2的表 面。當平板受壓時*可移式印模19被向下壓並因而藉著 可移式印模19的表面與下方印模12的側表面而.形成平板 插入槽15。平板被插入至平板插入槽is »當壓力釋放 時，可移式印模I9藉著弾賛16而往上移動。因_此，：EMC 墊圖型從下方印模12彈出。參考數字17、及18分別地代 表固定上方及下方印模I2甩的基座。參考數字20、13分 別地代表竿子以及安裝於上方印模內的加熱器.此時，使 EMC墊圖型鑄模的條件是大約l7〇°C持續一分鐘。在四 至五次操作之後*因爲印模11與I4之重複的開啓及關閉 操作會造成EMC墊附著至印模11與14，最好施加蠟至上 方及下方印模1 1與14的表面。 此後，EMC墊圖型在步驟S124被冷卻，在冷卻步驟 期間內，EMC墊圖型可能會彎曲。於是'最好按壓其上 方及下方表面而冷卻EMC墊圖型。 在步驟S126 <檢查EMC墊圖型是否其厚度爲均勻 ---：— ------f 丨裝^------訂-----级 (請先閱讀背面之注意事項再填寫本萸) 本紙乐尺度適用中國國家標卒（CNS ) A4規格（210X297公釐） -10， A 7 B7 經濟部中央標隼局負工消費合作社印製 五、發明説明（8 ) 的，以及是否在其中生成了任何的空隙。EMC墊圖型的 厚度最好是大約〇.3jnm並且其直徑是大紛100mm。 在步驟S 128，爲了其構成要素的完整功能，EMC墊 圖型在大約170°C矯正持續三小時。 步驟S 12 8接下來是步驟S 130，其中具有晶圓之形狀 的延伸膠帶被附著至EMC墊圖型的背面。EM(C墊圖型然 後被鋸開成各自具有比控制用1C大一點之預定尺寸的 EMC 墊。 當可靠性測試時，經由前述的方法所製造的EMC墊 會受到高溫逆向偏壓（HTRV)測試，其中在提供800 V的 電壓給EMC墊之後EMC墊被停留在125 °C持續5 00小 時。在HTRV測試中，經由前述方法製造的EMC墊不會 發生絕緣失效。 如上所述，EMC墊6然後於製造封裝體中被傳送並附 著至印模墊。 於是’有可能製造具有足夠介電強度的較薄的墊藉由 利用在其之間的EMC墊固定控制用1C於印模墊上。使用 EMC墊，亦可能以較低的成本製造半導體封裝體。依據 本發明，能夠使用傳統的設備去製造EMC墊。如前述所 製造的封裝體具有彈性。於是，即使薄的封裝體亦不會輕 易地破裂。 已經參考前述的實施例而描述這發明。然而，很明顯 地5對於熟悉此技藝者許多替代例、修正及變化將從先前 敘述的觀點而變成顯而易見的。於是，期望把所有此種替 (請先閱讀背面之注意事項再填寫本頁) 本紙乐尺度適用中國國家標準（CTNS ) .Μ規格（210X 297公釐} - 經濟部中央標準局tJi工消費合作杜印11 9 606 ' A7 87 五、發明説明（9 ) 代例、修正及變化包括於諸附加申請專利範圍的精神與範 疇之內。 (請先閱讀背面之注意事項再填寫本頁)
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1……控制用I C 2......MQSFET,功率元件 ^^^^1 i tn HBH I -- - 一OJf—^1^1 n^ (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製
3,4 ,7......黏著材料 5 ... ...印模墊 6___ ... '陶瓷墊 9 ... ...小珠 10. .....導線 11. .....上方印模 12. .....下方印模 13, 1 4……加熱器 15. .....平板插入槽 16. .....彈簧 17, 1 8 ......基座 19. .....可移式印模 20 . 竿子 ..... 1 -J 本紙乐尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -13 -

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  1. 4 ο 3 6 06 A8 B3 CS DS 六、申請專利範圍 1. —種半導體封裝體結構，包含： 至少一個使用篆性黏著材料被固定於印模墊上的第 一半導體晶片； 至少一個使用箠緣黏著材料被附著至载理提蟄之 環氣樹脂模製化合物UMC)墊；以及 使用第二絕緣黏廣材..料被固定於該EMC墊上之第二 半薄體..晶..片。 2. 如申請專利範圍第！項之半導體封裝體結構，其中該第一 半導體晶片包含了 MOSFET » 3-如申請專利範圍第1項之半導體封裝體結構，其中該第一 舆該第二絕緣材料各自包含了環氧樹脂。 Ί--^------f — 裝-- 1* (請先閲讀背面之注意事項再填寫本頁) 訂 經濟部中央標準局貞工消費合作社印袈 4. 如申請專利範圍第1項之半導體封裝體結構，其中該EMC 墊是比該第二半導體晶片更大》 5. 如申請專利範圍第4項之半導體封裝體結構，其中該EMC 墊是在各邊皆比該第二半導體晶片大lmm。 6·—種用以製造環氧樹脂模製化合物（EMC)墊的方法，包 含諸步驟： 預烘焙預定數目的的藏氬樹H模製化黾板； 藉由使用印模按壓該平板而模製出具有預定厚度的 本紙張尺度適用中國國家標準（CNS)A4規格（ 210 X 297公釐）-14- A3CD ο 9 6 0 6 六、申請專利祀圍 £MC墊圖型； 冷卻該EMC墊圖型； 检査該EMC墊圖型的厚度並且檢查該EMC墊圖型中 是否生成空隙： 爲了該EMC墊圖型之該等元件的完整作用正該 EMC墊圖型；以及 把該EMC墊圖型鋸開成各自具有預定尺寸的EMC 墊β 7. 如申請專利範圍第6項之製造EMC墊的方法，其中該預烘 焙步驟被持續實施一分鐘。 8. 如申請專利範圍第6項之製造EMC墊的方法，其中該製模 步騾在170 eC被持續實施一分瘇》 9. 如申請專利範圍第6項之製造EMC墊的方法*其中在重複 該模製步驟四至五次之後施加蠘至該印模的表面。 10. 如申請専利範圃第6項之製造EMC墊的方法，其中按壓 著該EMC墊圖型的上方與下方部份而實施該冷卻步驟》 11. 如申請專利範圍第6項之製造EMC墊的方法，其中該矯 正步驟在大約°C被持續實施3小時》 本紙張尺度適用中國國家樣準（CNS ) Α4規格（210Χ2ί>7公釐） ---^------i ·裝------訂---ρ I · (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局貝工消費合作社印裝 -15 - 469606 A8 BS C3 D8 六、申請專利範圍 12. 如申請專利範圍第6項之製造EMC墊的方法，更包含用 以在該鋸開步驟之前使延伸膠帶附著至該EMC墊圖型之 背面的步驟。 13. 如申請專利範圍第12項之製造EMC墊的方法，其中該 EMC墊圖型被鋸開成各自比控制用1C更大的該等EMC 墊。 14. 如申請專利範圍第6項之製造EMC墊的方法，其中該 EMC墊圖型具有0,3mm的厚度及100mm的直徑。 15. 如申請專利範圍第6項之製造EMC墊的方法，其中當該 等平板各自具有〇 . 3 m m的厚度及1 0 〇 m m的直徑時，該等 預定數目的平板是3.2至3.8g。 J--；------^ -裝^------訂------<"· 1 * (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作社中製 本紙張尺度適用中國國家標準i CNS ) A4規格（21〇Χ：297公釐）
TW87105206A 1997-06-16 1998-04-07 Semiconductor package structures using epoxy molding compound pads and a method for fabricating the epoxy molding compound pads TW469606B (en)

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