TW466487B - Ferroelectric memory device retaining ROM data - Google Patents
Ferroelectric memory device retaining ROM data Download PDFInfo
- Publication number
- TW466487B TW466487B TW089102119A TW89102119A TW466487B TW 466487 B TW466487 B TW 466487B TW 089102119 A TW089102119 A TW 089102119A TW 89102119 A TW89102119 A TW 89102119A TW 466487 B TW466487 B TW 466487B
- Authority
- TW
- Taiwan
- Prior art keywords
- ferroelectric
- data
- capacitor
- bit line
- ferroelectric capacitor
- Prior art date
Links
- 239000003990 capacitor Substances 0.000 claims abstract description 139
- 230000015654 memory Effects 0.000 claims abstract description 93
- 230000010287 polarization Effects 0.000 claims description 52
- 230000005684 electric field Effects 0.000 claims description 23
- 230000002079 cooperative effect Effects 0.000 claims description 8
- 230000000875 corresponding effect Effects 0.000 claims description 2
- 238000009434 installation Methods 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 1
- 238000004519 manufacturing process Methods 0.000 abstract description 28
- 238000000034 method Methods 0.000 abstract description 7
- 238000010586 diagram Methods 0.000 description 15
- 230000001419 dependent effect Effects 0.000 description 3
- 239000010408 film Substances 0.000 description 3
- 238000011084 recovery Methods 0.000 description 3
- 230000000717 retained effect Effects 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 235000012149 noodles Nutrition 0.000 description 2
- 239000007787 solid Substances 0.000 description 2
- 208000032544 Cicatrix Diseases 0.000 description 1
- 241000406668 Loxodonta cyclotis Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 231100000241 scar Toxicity 0.000 description 1
- 230000037387 scars Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11072639A JP2000268581A (ja) | 1999-03-17 | 1999-03-17 | Ｒｏｍデータを保持する強誘電体メモリ装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW466487B true TW466487B (en) | 2001-12-01 |
Family
ID=13495169
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089102119A TW466487B (en) | 1999-03-17 | 2000-02-09 | Ferroelectric memory device retaining ROM data |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US6229730B1 (https=) |
| EP (1) | EP1037213B1 (https=) |
| JP (1) | JP2000268581A (https=) |
| KR (1) | KR100534220B1 (https=) |
| DE (1) | DE60021939T2 (https=) |
| TW (1) | TW466487B (https=) |
Families Citing this family (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3971536B2 (ja) * | 1999-09-14 | 2007-09-05 | 松下電器産業株式会社 | 強誘電体メモリ装置 |
| US20030025649A1 (en) * | 2000-09-08 | 2003-02-06 | Wynne Willson Peter David | Image projection apparatus |
| JP4233205B2 (ja) * | 2000-09-28 | 2009-03-04 | シャープ株式会社 | リセット装置、半導体集積回路装置および半導体記憶装置 |
| DE10058965B4 (de) * | 2000-11-28 | 2007-10-11 | Infineon Technologies Ag | RAM-Speicher |
| JP2003233984A (ja) * | 2001-12-04 | 2003-08-22 | Sanyo Electric Co Ltd | メモリ装置 |
| JP2003263886A (ja) * | 2002-03-08 | 2003-09-19 | Fujitsu Ltd | ビット線容量を最適化できる強誘電体メモリ |
| US6804140B2 (en) * | 2002-04-17 | 2004-10-12 | Macronix International Co., Ltd. | Capacitance sensing method of reading a ferroelectric RAM |
| US6590798B1 (en) * | 2002-05-08 | 2003-07-08 | Texas Instruments Incorporated | Apparatus and methods for imprint reduction for ferroelectric memory cell |
| KR102314663B1 (ko) | 2016-08-31 | 2021-10-21 | 마이크론 테크놀로지, 인크. | 2 트랜지스터-1 커패시터 메모리를 포함하고 이를 액세스하기 위한 장치 및 방법 |
| EP3507805B1 (en) | 2016-08-31 | 2025-10-01 | Micron Technology, Inc. | Apparatuses and methods including ferroelectric memory and for operating ferroelectric memory |
| SG11201901210UA (en) * | 2016-08-31 | 2019-03-28 | Micron Technology Inc | Ferroelectric memory cells |
| CN109643571A (zh) | 2016-08-31 | 2019-04-16 | 美光科技公司 | 包含铁电存储器及用于存取铁电存储器的设备及方法 |
| US10867675B2 (en) | 2017-07-13 | 2020-12-15 | Micron Technology, Inc. | Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells |
Family Cites Families (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5086412A (en) * | 1990-11-21 | 1992-02-04 | National Semiconductor Corporation | Sense amplifier and method for ferroelectric memory |
| TW378323B (en) * | 1994-09-22 | 2000-01-01 | Matsushita Electric Industrial Co Ltd | Ferroelectric memory device |
| EP0749127B1 (en) | 1995-06-14 | 2001-09-26 | Motorola, Inc. | Data storage element and method for restoring data |
| TW322578B (https=) * | 1996-03-18 | 1997-12-11 | Matsushita Electron Co Ltd | |
| EP0829882B1 (en) * | 1996-03-25 | 2003-07-02 | Matsushita Electric Industrial Co., Ltd. | Ferroelectric storage device |
| US5818771A (en) * | 1996-09-30 | 1998-10-06 | Hitachi, Ltd. | Semiconductor memory device |
| JP3933736B2 (ja) * | 1996-12-09 | 2007-06-20 | ローム株式会社 | 強誘電体コンデンサを備えた半導体装置 |
| JPH10270654A (ja) * | 1997-03-27 | 1998-10-09 | Toshiba Corp | 半導体記憶装置 |
| JP3727157B2 (ja) * | 1997-11-19 | 2005-12-14 | Ｎｅｃエレクトロニクス株式会社 | 半導体記憶装置及びその試験方法 |
-
1999
- 1999-03-17 JP JP11072639A patent/JP2000268581A/ja not_active Withdrawn
-
2000
- 2000-02-07 EP EP00300946A patent/EP1037213B1/en not_active Expired - Lifetime
- 2000-02-07 DE DE60021939T patent/DE60021939T2/de not_active Expired - Fee Related
- 2000-02-09 TW TW089102119A patent/TW466487B/zh not_active IP Right Cessation
- 2000-02-11 KR KR10-2000-0006465A patent/KR100534220B1/ko not_active Expired - Fee Related
- 2000-03-15 US US09/526,280 patent/US6229730B1/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| EP1037213B1 (en) | 2005-08-17 |
| KR100534220B1 (ko) | 2005-12-08 |
| KR20000062547A (ko) | 2000-10-25 |
| US6229730B1 (en) | 2001-05-08 |
| EP1037213A3 (en) | 2001-01-17 |
| DE60021939D1 (de) | 2005-09-22 |
| DE60021939T2 (de) | 2006-03-30 |
| JP2000268581A (ja) | 2000-09-29 |
| EP1037213A2 (en) | 2000-09-20 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |