TW464924B - Plasma processing reactor - Google Patents
Plasma processing reactor Download PDFInfo
- Publication number
- TW464924B TW464924B TW089112121A TW89112121A TW464924B TW 464924 B TW464924 B TW 464924B TW 089112121 A TW089112121 A TW 089112121A TW 89112121 A TW89112121 A TW 89112121A TW 464924 B TW464924 B TW 464924B
- Authority
- TW
- Taiwan
- Prior art keywords
- substrate
- uniform ring
- patent application
- plasma processing
- item
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 110
- 239000000758 substrate Substances 0.000 claims abstract description 174
- 238000009792 diffusion process Methods 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims description 42
- 230000002093 peripheral effect Effects 0.000 claims description 22
- 238000000034 method Methods 0.000 claims description 21
- 239000000463 material Substances 0.000 claims description 20
- 239000006227 byproduct Substances 0.000 claims description 15
- 230000008569 process Effects 0.000 claims description 13
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 238000004519 manufacturing process Methods 0.000 claims description 6
- 230000004888 barrier function Effects 0.000 claims description 5
- 230000002079 cooperative effect Effects 0.000 claims description 4
- 238000005260 corrosion Methods 0.000 claims description 3
- 230000007797 corrosion Effects 0.000 claims description 3
- 238000009832 plasma treatment Methods 0.000 claims description 3
- 229910010293 ceramic material Inorganic materials 0.000 claims description 2
- 239000012636 effector Substances 0.000 claims description 2
- 239000010453 quartz Substances 0.000 claims description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 2
- 239000002002 slurry Substances 0.000 claims description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims 1
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 claims 1
- 230000007935 neutral effect Effects 0.000 description 46
- 239000007789 gas Substances 0.000 description 44
- 150000002500 ions Chemical class 0.000 description 25
- 230000001939 inductive effect Effects 0.000 description 11
- 239000002245 particle Substances 0.000 description 9
- 238000011109 contamination Methods 0.000 description 7
- 230000005684 electric field Effects 0.000 description 6
- 239000000126 substance Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 230000008901 benefit Effects 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000009826 distribution Methods 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 238000001020 plasma etching Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000002411 adverse Effects 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000007796 conventional method Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 238000009616 inductively coupled plasma Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 230000032258 transport Effects 0.000 description 2
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 239000011149 active material Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 239000000376 reactant Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000007142 ring opening reaction Methods 0.000 description 1
- 239000013049 sediment Substances 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- JFALSRSLKYAFGM-UHFFFAOYSA-N uranium(0) Chemical compound [U] JFALSRSLKYAFGM-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32623—Mechanical discharge control means
- H01J37/32642—Focus rings
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
- Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US09/346,564 US6257168B1 (en) | 1999-06-30 | 1999-06-30 | Elevated stationary uniformity ring design |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW464924B true TW464924B (en) | 2001-11-21 |
Family
ID=23360003
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW089112121A TW464924B (en) | 1999-06-30 | 2000-06-20 | Plasma processing reactor |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US6257168B1 (enExample) |
| EP (1) | EP1108263B1 (enExample) |
| JP (1) | JP2003503840A (enExample) |
| KR (1) | KR100743874B1 (enExample) |
| CN (1) | CN1150593C (enExample) |
| AU (1) | AU5908500A (enExample) |
| TW (1) | TW464924B (enExample) |
| WO (1) | WO2001001444A1 (enExample) |
Families Citing this family (34)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6230651B1 (en) * | 1998-12-30 | 2001-05-15 | Lam Research Corporation | Gas injection system for plasma processing |
| US20060191637A1 (en) * | 2001-06-21 | 2006-08-31 | John Zajac | Etching Apparatus and Process with Thickness and Uniformity Control |
| US20050059250A1 (en) * | 2001-06-21 | 2005-03-17 | Savas Stephen Edward | Fast etching system and process for organic materials |
| US6838387B1 (en) | 2001-06-21 | 2005-01-04 | John Zajac | Fast etching system and process |
| US20030070620A1 (en) | 2001-10-15 | 2003-04-17 | Cooperberg David J. | Tunable multi-zone gas injection system |
| US6884717B1 (en) | 2002-01-03 | 2005-04-26 | The United States Of America As Represented By The Secretary Of The Air Force | Stiffened backside fabrication for microwave radio frequency wafers |
| US7075771B2 (en) * | 2003-05-21 | 2006-07-11 | Tokyo Electron Limited | Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system |
| EP1480250A1 (en) * | 2003-05-22 | 2004-11-24 | HELYSSEN S.à.r.l. | A high density plasma reactor and RF-antenna therefor |
| JP4418193B2 (ja) * | 2003-08-22 | 2010-02-17 | 東京エレクトロン株式会社 | パーティクル除去装置及びパーティクル除去方法及びプラズマ処理装置 |
| GB0323001D0 (en) * | 2003-10-01 | 2003-11-05 | Oxford Instr Plasma Technology | Apparatus and method for plasma treating a substrate |
| US7138067B2 (en) * | 2004-09-27 | 2006-11-21 | Lam Research Corporation | Methods and apparatus for tuning a set of plasma processing steps |
| US7578945B2 (en) * | 2004-09-27 | 2009-08-25 | Lam Research Corporation | Method and apparatus for tuning a set of plasma processing steps |
| US20060172542A1 (en) * | 2005-01-28 | 2006-08-03 | Applied Materials, Inc. | Method and apparatus to confine plasma and to enhance flow conductance |
| KR100672828B1 (ko) * | 2005-06-29 | 2007-01-22 | 삼성전자주식회사 | 챔버 인서트 및 이를 포함하는 기판 가공 장치 |
| US7879184B2 (en) * | 2006-06-20 | 2011-02-01 | Lam Research Corporation | Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts |
| GB0616131D0 (en) * | 2006-08-14 | 2006-09-20 | Oxford Instr Plasma Technology | Surface processing apparatus |
| CN101663421A (zh) * | 2007-04-27 | 2010-03-03 | 应用材料股份有限公司 | 环形挡板 |
| US9478428B2 (en) * | 2010-10-05 | 2016-10-25 | Skyworks Solutions, Inc. | Apparatus and methods for shielding a plasma etcher electrode |
| US20120083129A1 (en) | 2010-10-05 | 2012-04-05 | Skyworks Solutions, Inc. | Apparatus and methods for focusing plasma |
| CN203205393U (zh) * | 2011-03-01 | 2013-09-18 | 应用材料公司 | 用于转移基板及限制自由基的箍组件 |
| US10453694B2 (en) | 2011-03-01 | 2019-10-22 | Applied Materials, Inc. | Abatement and strip process chamber in a dual loadlock configuration |
| US11171008B2 (en) | 2011-03-01 | 2021-11-09 | Applied Materials, Inc. | Abatement and strip process chamber in a dual load lock configuration |
| KR101926571B1 (ko) * | 2011-05-31 | 2018-12-10 | 어플라이드 머티어리얼스, 인코포레이티드 | 유도성 커플링된 플라즈마(ｉｃｐ) 반응기를 위한 동적인 이온 라디칼 시브 및 이온 라디칼 개구 |
| WO2013130191A1 (en) | 2012-02-29 | 2013-09-06 | Applied Materials, Inc. | Abatement and strip process chamber in a load lock configuration |
| JP5917477B2 (ja) * | 2013-11-29 | 2016-05-18 | 株式会社日立国際電気 | 基板処理装置、半導体装置の製造方法及びプログラム |
| US9829790B2 (en) * | 2015-06-08 | 2017-11-28 | Applied Materials, Inc. | Immersion field guided exposure and post-exposure bake process |
| KR102553629B1 (ko) * | 2016-06-17 | 2023-07-11 | 삼성전자주식회사 | 플라즈마 처리 장치 |
| KR20240122603A (ko) * | 2017-12-05 | 2024-08-12 | 램 리써치 코포레이션 | 에지 링 마모 보상 (wear compensation) 을 위한 시스템 및 방법 |
| KR20190092154A (ko) | 2018-01-30 | 2019-08-07 | 삼성전자주식회사 | 반도체 설비의 실링 장치 및 기류 산포 제어 장치 |
| CN110911303B (zh) * | 2018-09-14 | 2022-05-27 | 北京北方华创微电子装备有限公司 | 易碎管件的固定组件及半导体加工设备 |
| KR20220024568A (ko) | 2019-06-18 | 2022-03-03 | 램 리써치 코포레이션 | 기판 프로세싱 시스템들을 위한 감소된 직경 캐리어 링 하드웨어 |
| FI129610B (en) * | 2020-01-10 | 2022-05-31 | Picosun Oy | SUBSTRATE PROCESSING EQUIPMENT AND METHOD |
| JP7437985B2 (ja) * | 2020-03-16 | 2024-02-26 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
| US20230066418A1 (en) * | 2021-08-30 | 2023-03-02 | Taiwan Semiconductor Manufacturing Company, Ltd. | Focus ring for a plasma-based semiconductor processing tool |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61131453A (ja) * | 1984-11-30 | 1986-06-19 | Fujitsu Ltd | ヱツチング方法 |
| JPH0415918A (ja) * | 1990-05-09 | 1992-01-21 | Fujitsu Ltd | ドライエッチング装置 |
| US5662770A (en) * | 1993-04-16 | 1997-09-02 | Micron Technology, Inc. | Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks |
| JP2638443B2 (ja) * | 1993-08-31 | 1997-08-06 | 日本電気株式会社 | ドライエッチング方法およびドライエッチング装置 |
| JPH0786252A (ja) * | 1993-09-20 | 1995-03-31 | Fujitsu Ltd | ドライエッチング装置とドライエッチング方法 |
| US5463525A (en) * | 1993-12-20 | 1995-10-31 | International Business Machines Corporation | Guard ring electrostatic chuck |
| US5685914A (en) * | 1994-04-05 | 1997-11-11 | Applied Materials, Inc. | Focus ring for semiconductor wafer processing in a plasma reactor |
| JP3210207B2 (ja) * | 1994-04-20 | 2001-09-17 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US5552124A (en) | 1994-06-22 | 1996-09-03 | Applied Materials, Inc. | Stationary focus ring for plasma reactor |
| JP3150058B2 (ja) * | 1994-12-05 | 2001-03-26 | 東京エレクトロン株式会社 | プラズマ処理装置及びプラズマ処理方法 |
| TW434745B (en) * | 1995-06-07 | 2001-05-16 | Tokyo Electron Ltd | Plasma processing apparatus |
| JP3192370B2 (ja) * | 1995-06-08 | 2001-07-23 | 東京エレクトロン株式会社 | プラズマ処理装置 |
| US5891348A (en) * | 1996-01-26 | 1999-04-06 | Applied Materials, Inc. | Process gas focusing apparatus and method |
| CA2207154A1 (en) * | 1996-06-10 | 1997-12-10 | Lam Research Corporation | Inductively coupled source for deriving substantially uniform plasma flux |
| US5900064A (en) * | 1997-05-01 | 1999-05-04 | Applied Materials, Inc. | Plasma process chamber |
| WO1999014788A1 (en) * | 1997-09-16 | 1999-03-25 | Applied Materials, Inc. | Shield or ring surrounding semiconductor workpiece in plasma chamber |
| US6074488A (en) * | 1997-09-16 | 2000-06-13 | Applied Materials, Inc | Plasma chamber support having an electrically coupled collar ring |
-
1999
- 1999-06-30 US US09/346,564 patent/US6257168B1/en not_active Expired - Lifetime
-
2000
- 2000-06-20 TW TW089112121A patent/TW464924B/zh not_active IP Right Cessation
- 2000-06-29 KR KR1020017002408A patent/KR100743874B1/ko not_active Expired - Lifetime
- 2000-06-29 JP JP2001506575A patent/JP2003503840A/ja active Pending
- 2000-06-29 AU AU59085/00A patent/AU5908500A/en not_active Abandoned
- 2000-06-29 EP EP00945096A patent/EP1108263B1/en not_active Expired - Lifetime
- 2000-06-29 CN CNB008012636A patent/CN1150593C/zh not_active Expired - Fee Related
- 2000-06-29 WO PCT/US2000/018233 patent/WO2001001444A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| AU5908500A (en) | 2001-01-31 |
| EP1108263B1 (en) | 2008-02-13 |
| CN1150593C (zh) | 2004-05-19 |
| CN1316095A (zh) | 2001-10-03 |
| US6257168B1 (en) | 2001-07-10 |
| JP2003503840A (ja) | 2003-01-28 |
| EP1108263A1 (en) | 2001-06-20 |
| WO2001001444A1 (en) | 2001-01-04 |
| KR100743874B1 (ko) | 2007-07-30 |
| KR20010072968A (ko) | 2001-07-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MK4A | Expiration of patent term of an invention patent |