CN1150593C - 改进的固定均匀环设计 - Google Patents

改进的固定均匀环设计 Download PDF

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Publication number
CN1150593C
CN1150593C CNB008012636A CN00801263A CN1150593C CN 1150593 C CN1150593 C CN 1150593C CN B008012636 A CNB008012636 A CN B008012636A CN 00801263 A CN00801263 A CN 00801263A CN 1150593 C CN1150593 C CN 1150593C
Authority
CN
China
Prior art keywords
substrate
uniformity ring
ring
chamber
plasma processing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CNB008012636A
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English (en)
Chinese (zh)
Other versions
CN1316095A (zh
Inventor
T・尼
T·尼
森
W·科利森
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Lam Research Corp
Original Assignee
Lam Research Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lam Research Corp filed Critical Lam Research Corp
Publication of CN1316095A publication Critical patent/CN1316095A/zh
Application granted granted Critical
Publication of CN1150593C publication Critical patent/CN1150593C/zh
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
CNB008012636A 1999-06-30 2000-06-29 改进的固定均匀环设计 Expired - Fee Related CN1150593C (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US09/346,564 US6257168B1 (en) 1999-06-30 1999-06-30 Elevated stationary uniformity ring design
US09/346,564 1999-06-30
US09/346564 1999-06-30

Publications (2)

Publication Number Publication Date
CN1316095A CN1316095A (zh) 2001-10-03
CN1150593C true CN1150593C (zh) 2004-05-19

Family

ID=23360003

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB008012636A Expired - Fee Related CN1150593C (zh) 1999-06-30 2000-06-29 改进的固定均匀环设计

Country Status (8)

Country Link
US (1) US6257168B1 (enExample)
EP (1) EP1108263B1 (enExample)
JP (1) JP2003503840A (enExample)
KR (1) KR100743874B1 (enExample)
CN (1) CN1150593C (enExample)
AU (1) AU5908500A (enExample)
TW (1) TW464924B (enExample)
WO (1) WO2001001444A1 (enExample)

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US20060191637A1 (en) * 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US20050059250A1 (en) * 2001-06-21 2005-03-17 Savas Stephen Edward Fast etching system and process for organic materials
US6838387B1 (en) 2001-06-21 2005-01-04 John Zajac Fast etching system and process
US20030070620A1 (en) 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US6884717B1 (en) 2002-01-03 2005-04-26 The United States Of America As Represented By The Secretary Of The Air Force Stiffened backside fabrication for microwave radio frequency wafers
US7075771B2 (en) * 2003-05-21 2006-07-11 Tokyo Electron Limited Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system
EP1480250A1 (en) * 2003-05-22 2004-11-24 HELYSSEN S.à.r.l. A high density plasma reactor and RF-antenna therefor
JP4418193B2 (ja) * 2003-08-22 2010-02-17 東京エレクトロン株式会社 パーティクル除去装置及びパーティクル除去方法及びプラズマ処理装置
GB0323001D0 (en) * 2003-10-01 2003-11-05 Oxford Instr Plasma Technology Apparatus and method for plasma treating a substrate
US7138067B2 (en) * 2004-09-27 2006-11-21 Lam Research Corporation Methods and apparatus for tuning a set of plasma processing steps
US7578945B2 (en) * 2004-09-27 2009-08-25 Lam Research Corporation Method and apparatus for tuning a set of plasma processing steps
US20060172542A1 (en) * 2005-01-28 2006-08-03 Applied Materials, Inc. Method and apparatus to confine plasma and to enhance flow conductance
KR100672828B1 (ko) * 2005-06-29 2007-01-22 삼성전자주식회사 챔버 인서트 및 이를 포함하는 기판 가공 장치
US7879184B2 (en) * 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
GB0616131D0 (en) * 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
CN101663421A (zh) * 2007-04-27 2010-03-03 应用材料股份有限公司 环形挡板
US9478428B2 (en) * 2010-10-05 2016-10-25 Skyworks Solutions, Inc. Apparatus and methods for shielding a plasma etcher electrode
US20120083129A1 (en) 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Apparatus and methods for focusing plasma
CN203205393U (zh) * 2011-03-01 2013-09-18 应用材料公司 用于转移基板及限制自由基的箍组件
US10453694B2 (en) 2011-03-01 2019-10-22 Applied Materials, Inc. Abatement and strip process chamber in a dual loadlock configuration
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
KR101926571B1 (ko) * 2011-05-31 2018-12-10 어플라이드 머티어리얼스, 인코포레이티드 유도성 커플링된 플라즈마(ｉｃｐ) 반응기를 위한 동적인 이온 라디칼 시브 및 이온 라디칼 개구
WO2013130191A1 (en) 2012-02-29 2013-09-06 Applied Materials, Inc. Abatement and strip process chamber in a load lock configuration
JP5917477B2 (ja) * 2013-11-29 2016-05-18 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US9829790B2 (en) * 2015-06-08 2017-11-28 Applied Materials, Inc. Immersion field guided exposure and post-exposure bake process
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
KR20240122603A (ko) * 2017-12-05 2024-08-12 램 리써치 코포레이션 에지 링 마모 보상 (wear compensation) 을 위한 시스템 및 방법
KR20190092154A (ko) 2018-01-30 2019-08-07 삼성전자주식회사 반도체 설비의 실링 장치 및 기류 산포 제어 장치
CN110911303B (zh) * 2018-09-14 2022-05-27 北京北方华创微电子装备有限公司 易碎管件的固定组件及半导体加工设备
KR20220024568A (ko) 2019-06-18 2022-03-03 램 리써치 코포레이션 기판 프로세싱 시스템들을 위한 감소된 직경 캐리어 링 하드웨어
FI129610B (en) * 2020-01-10 2022-05-31 Picosun Oy SUBSTRATE PROCESSING EQUIPMENT AND METHOD
JP7437985B2 (ja) * 2020-03-16 2024-02-26 東京エレクトロン株式会社 基板処理装置および基板処理方法
US20230066418A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for a plasma-based semiconductor processing tool

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JPS61131453A (ja) * 1984-11-30 1986-06-19 Fujitsu Ltd ヱツチング方法
JPH0415918A (ja) * 1990-05-09 1992-01-21 Fujitsu Ltd ドライエッチング装置
US5662770A (en) * 1993-04-16 1997-09-02 Micron Technology, Inc. Method and apparatus for improving etch uniformity in remote source plasma reactors with powered wafer chucks
JP2638443B2 (ja) * 1993-08-31 1997-08-06 日本電気株式会社 ドライエッチング方法およびドライエッチング装置
JPH0786252A (ja) * 1993-09-20 1995-03-31 Fujitsu Ltd ドライエッチング装置とドライエッチング方法
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US5685914A (en) * 1994-04-05 1997-11-11 Applied Materials, Inc. Focus ring for semiconductor wafer processing in a plasma reactor
JP3210207B2 (ja) * 1994-04-20 2001-09-17 東京エレクトロン株式会社 プラズマ処理装置
US5552124A (en) 1994-06-22 1996-09-03 Applied Materials, Inc. Stationary focus ring for plasma reactor
JP3150058B2 (ja) * 1994-12-05 2001-03-26 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
TW434745B (en) * 1995-06-07 2001-05-16 Tokyo Electron Ltd Plasma processing apparatus
JP3192370B2 (ja) * 1995-06-08 2001-07-23 東京エレクトロン株式会社 プラズマ処理装置
US5891348A (en) * 1996-01-26 1999-04-06 Applied Materials, Inc. Process gas focusing apparatus and method
CA2207154A1 (en) * 1996-06-10 1997-12-10 Lam Research Corporation Inductively coupled source for deriving substantially uniform plasma flux
US5900064A (en) * 1997-05-01 1999-05-04 Applied Materials, Inc. Plasma process chamber
WO1999014788A1 (en) * 1997-09-16 1999-03-25 Applied Materials, Inc. Shield or ring surrounding semiconductor workpiece in plasma chamber
US6074488A (en) * 1997-09-16 2000-06-13 Applied Materials, Inc Plasma chamber support having an electrically coupled collar ring

Also Published As

Publication number Publication date
AU5908500A (en) 2001-01-31
EP1108263B1 (en) 2008-02-13
CN1316095A (zh) 2001-10-03
US6257168B1 (en) 2001-07-10
JP2003503840A (ja) 2003-01-28
EP1108263A1 (en) 2001-06-20
WO2001001444A1 (en) 2001-01-04
KR100743874B1 (ko) 2007-07-30
TW464924B (en) 2001-11-21
KR20010072968A (ko) 2001-07-31

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Granted publication date: 20040519

Termination date: 20140629

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