KR100743874B1 - 향상된 고정 균등 링 설계 - Google Patents

향상된 고정 균등 링 설계 Download PDF

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Publication number
KR100743874B1
KR100743874B1 KR1020017002408A KR20017002408A KR100743874B1 KR 100743874 B1 KR100743874 B1 KR 100743874B1 KR 1020017002408 A KR1020017002408 A KR 1020017002408A KR 20017002408 A KR20017002408 A KR 20017002408A KR 100743874 B1 KR100743874 B1 KR 100743874B1
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KR
South Korea
Prior art keywords
substrate
ring
plasma processing
chamber
processing reactor
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Expired - Lifetime
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KR1020017002408A
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English (en)
Korean (ko)
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KR20010072968A (ko
Inventor
투키앙 니
웬리 콜리슨
Original Assignee
램 리써치 코포레이션
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S156/00—Adhesive bonding and miscellaneous chemical manufacture
    • Y10S156/915—Differential etching apparatus including focus ring surrounding a wafer for plasma apparatus

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Plasma Technology (AREA)
KR1020017002408A 1999-06-30 2000-06-29 향상된 고정 균등 링 설계 Expired - Lifetime KR100743874B1 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/346,564 US6257168B1 (en) 1999-06-30 1999-06-30 Elevated stationary uniformity ring design
US09/346,564 1999-06-30

Publications (2)

Publication Number Publication Date
KR20010072968A KR20010072968A (ko) 2001-07-31
KR100743874B1 true KR100743874B1 (ko) 2007-07-30

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020017002408A Expired - Lifetime KR100743874B1 (ko) 1999-06-30 2000-06-29 향상된 고정 균등 링 설계

Country Status (8)

Country Link
US (1) US6257168B1 (enExample)
EP (1) EP1108263B1 (enExample)
JP (1) JP2003503840A (enExample)
KR (1) KR100743874B1 (enExample)
CN (1) CN1150593C (enExample)
AU (1) AU5908500A (enExample)
TW (1) TW464924B (enExample)
WO (1) WO2001001444A1 (enExample)

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US20060191637A1 (en) * 2001-06-21 2006-08-31 John Zajac Etching Apparatus and Process with Thickness and Uniformity Control
US20050059250A1 (en) * 2001-06-21 2005-03-17 Savas Stephen Edward Fast etching system and process for organic materials
US6838387B1 (en) 2001-06-21 2005-01-04 John Zajac Fast etching system and process
US20030070620A1 (en) 2001-10-15 2003-04-17 Cooperberg David J. Tunable multi-zone gas injection system
US6884717B1 (en) 2002-01-03 2005-04-26 The United States Of America As Represented By The Secretary Of The Air Force Stiffened backside fabrication for microwave radio frequency wafers
US7075771B2 (en) * 2003-05-21 2006-07-11 Tokyo Electron Limited Apparatus and methods for compensating plasma sheath non-uniformities at the substrate in a plasma processing system
EP1480250A1 (en) * 2003-05-22 2004-11-24 HELYSSEN S.à.r.l. A high density plasma reactor and RF-antenna therefor
JP4418193B2 (ja) * 2003-08-22 2010-02-17 東京エレクトロン株式会社 パーティクル除去装置及びパーティクル除去方法及びプラズマ処理装置
GB0323001D0 (en) * 2003-10-01 2003-11-05 Oxford Instr Plasma Technology Apparatus and method for plasma treating a substrate
US7138067B2 (en) * 2004-09-27 2006-11-21 Lam Research Corporation Methods and apparatus for tuning a set of plasma processing steps
US7578945B2 (en) * 2004-09-27 2009-08-25 Lam Research Corporation Method and apparatus for tuning a set of plasma processing steps
US20060172542A1 (en) * 2005-01-28 2006-08-03 Applied Materials, Inc. Method and apparatus to confine plasma and to enhance flow conductance
KR100672828B1 (ko) * 2005-06-29 2007-01-22 삼성전자주식회사 챔버 인서트 및 이를 포함하는 기판 가공 장치
US7879184B2 (en) * 2006-06-20 2011-02-01 Lam Research Corporation Apparatuses, systems and methods for rapid cleaning of plasma confinement rings with minimal erosion of other chamber parts
GB0616131D0 (en) * 2006-08-14 2006-09-20 Oxford Instr Plasma Technology Surface processing apparatus
CN101663421A (zh) * 2007-04-27 2010-03-03 应用材料股份有限公司 环形挡板
US9478428B2 (en) * 2010-10-05 2016-10-25 Skyworks Solutions, Inc. Apparatus and methods for shielding a plasma etcher electrode
US20120083129A1 (en) 2010-10-05 2012-04-05 Skyworks Solutions, Inc. Apparatus and methods for focusing plasma
CN203205393U (zh) * 2011-03-01 2013-09-18 应用材料公司 用于转移基板及限制自由基的箍组件
US10453694B2 (en) 2011-03-01 2019-10-22 Applied Materials, Inc. Abatement and strip process chamber in a dual loadlock configuration
US11171008B2 (en) 2011-03-01 2021-11-09 Applied Materials, Inc. Abatement and strip process chamber in a dual load lock configuration
KR101926571B1 (ko) * 2011-05-31 2018-12-10 어플라이드 머티어리얼스, 인코포레이티드 유도성 커플링된 플라즈마(ｉｃｐ) 반응기를 위한 동적인 이온 라디칼 시브 및 이온 라디칼 개구
WO2013130191A1 (en) 2012-02-29 2013-09-06 Applied Materials, Inc. Abatement and strip process chamber in a load lock configuration
JP5917477B2 (ja) * 2013-11-29 2016-05-18 株式会社日立国際電気 基板処理装置、半導体装置の製造方法及びプログラム
US9829790B2 (en) * 2015-06-08 2017-11-28 Applied Materials, Inc. Immersion field guided exposure and post-exposure bake process
KR102553629B1 (ko) * 2016-06-17 2023-07-11 삼성전자주식회사 플라즈마 처리 장치
KR20240122603A (ko) * 2017-12-05 2024-08-12 램 리써치 코포레이션 에지 링 마모 보상 (wear compensation) 을 위한 시스템 및 방법
KR20190092154A (ko) 2018-01-30 2019-08-07 삼성전자주식회사 반도체 설비의 실링 장치 및 기류 산포 제어 장치
CN110911303B (zh) * 2018-09-14 2022-05-27 北京北方华创微电子装备有限公司 易碎管件的固定组件及半导体加工设备
KR20220024568A (ko) 2019-06-18 2022-03-03 램 리써치 코포레이션 기판 프로세싱 시스템들을 위한 감소된 직경 캐리어 링 하드웨어
FI129610B (en) * 2020-01-10 2022-05-31 Picosun Oy SUBSTRATE PROCESSING EQUIPMENT AND METHOD
JP7437985B2 (ja) * 2020-03-16 2024-02-26 東京エレクトロン株式会社 基板処理装置および基板処理方法
US20230066418A1 (en) * 2021-08-30 2023-03-02 Taiwan Semiconductor Manufacturing Company, Ltd. Focus ring for a plasma-based semiconductor processing tool

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Also Published As

Publication number Publication date
AU5908500A (en) 2001-01-31
EP1108263B1 (en) 2008-02-13
CN1150593C (zh) 2004-05-19
CN1316095A (zh) 2001-10-03
US6257168B1 (en) 2001-07-10
JP2003503840A (ja) 2003-01-28
EP1108263A1 (en) 2001-06-20
WO2001001444A1 (en) 2001-01-04
TW464924B (en) 2001-11-21
KR20010072968A (ko) 2001-07-31

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